JPH0467691A - Tl-based superconductive material - Google Patents
Tl-based superconductive materialInfo
- Publication number
- JPH0467691A JPH0467691A JP2181205A JP18120590A JPH0467691A JP H0467691 A JPH0467691 A JP H0467691A JP 2181205 A JP2181205 A JP 2181205A JP 18120590 A JP18120590 A JP 18120590A JP H0467691 A JPH0467691 A JP H0467691A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxygen
- target
- burned
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 22
- 229910002480 Cu-O Inorganic materials 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 abstract description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract description 2
- 229960004643 cupric oxide Drugs 0.000 abstract description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- 229910000457 iridium oxide Inorganic materials 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- LPHBARMWKLYWRA-UHFFFAOYSA-N thallium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tl+3].[Tl+3] LPHBARMWKLYWRA-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 output 100-155W Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は配線、電磁波センサー 超伝導トランジスタ、
電流制御素子、超伝導マグネット等に用いる超伝導材料
に関する。[Detailed Description of the Invention] [Industrial Application Fields] The present invention is applicable to wiring, electromagnetic wave sensors, superconducting transistors,
It relates to superconducting materials used in current control elements, superconducting magnets, etc.
［従来の技術］
現在安定性、再現性共にあり世界で公認されている最も
高い臨界温度を持つ超伝導物質はＡｒｋａｎｓ ａｓ大
学のＡ、Ｍ、Ｈｅｒｍａｎｎらの発見したＴ ｌ −Ｍ
−Ｃｕ−○系（ここでＭはアルカリ土類を示す）であ
る。主たる化合物の組成はＴｌ２Ｂａ２Ｃａ２Ｃｕ３０
ｘであり詳細はＰｈｙｓｉｃａ Ｒｅｖｉｅｗ Ｌ
ｅｔｔｅｒｓ Ｖｏｌ、６０ Ｎｏ１６ ｐｐ１
６５７、ＪａｐａｎｅｓｅＪｏｕｎａｌ Ｏｆ Ａ
ｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｖｏｌ、２７
Ｎｏ５ １９８８ ＰｐＬ８０４等に述べられている
。この物質は１２０に以上の臨界温度を持つため液体窒
素（７７Ｋ）を冷却剤として使用した場合Ｙ系やＢｉ系
に較べ大きなマージンがとれ幅広い応用が期待されてい
る。[Prior art] The current superconducting material that is both stable and reproducible and has the highest critical temperature officially recognized in the world is T l -M, which was discovered by A. M. Hermann et al. of the University of Arkansas.
-Cu-○ system (here M represents alkaline earth). The composition of the main compound is Tl2Ba2Ca2Cu30
x and details are in Physica Review L
etters Vol, 60 No16 pp1
657, Japanese Journal of A
pplied Physics Vol, 27
No.5 1988 PpL804 etc. Since this material has a critical temperature of 120 degrees or higher, when liquid nitrogen (77K) is used as a coolant, it has a large margin compared to Y-based and Bi-based materials, and is expected to have a wide range of applications.
［発明が解決しようとする課題］
しかしながら前記超伝導材料の臨界電流密度は■多結晶
になり易い材料であると共に結晶粒界部に電流を阻害す
る第２相が析出し易い。[Problems to be Solved by the Invention] However, the critical current density of the superconducting material is as follows: (1) It is a material that tends to become polycrystalline, and a second phase that inhibits current flow is likely to precipitate at grain boundaries.
■コヒーレンス長さが短いため粒界部の影響を受は易い
。■Because the coherence length is short, it is easily affected by grain boundaries.
■異方性が強い。 （結晶を配向させる必要がある）
等の理由により大変低いものであった。その値はコンス
タントに得られる値で薄膜は１０’Ａ／ｃｍ２台、線材
は１０ ” Ａ ／ ｃ ｍ ２台前半が一般的であっ
た。 通常臨界電流密度は薄膜を主体としたエレクトロ
ニクスへの応用で１０’Ａ／ｃｍ２以上、線材を主体と
した重電機器への応用で１０５Ａ／ｃｍ２以上必要と言
われているがこの様に値はまだ２桁も差がある。これら
の対策として超伝導物質の単結晶化があるが単結晶化は
大口径化が困難であるだけでなくコストが非常に高くな
るため実用化に向けては多結晶に於て臨界電流密度を上
げる必要がある。■Strong anisotropy. (It is necessary to orient the crystals.) It was very low due to the following reasons. The value is a value that can be constantly obtained, and is generally in the 10'A/cm2 range for thin films, and in the lower 10'' A/cm2 range for wire rods.Usually, the critical current density is applied to electronics mainly using thin films. It is said that 10'A/cm2 or more is required for application to heavy electrical equipment mainly made of wires, and 105A/cm2 or more is required for applications in heavy electrical equipment mainly made of wires, but as shown above, there is still a difference of two orders of magnitude.Superconductivity Single crystallization of materials is possible, but since single crystallization is not only difficult to increase in diameter but also extremely expensive, it is necessary to increase the critical current density in polycrystals for practical use.
また超伝導トランジスターやジョセフソン素子では数ｎ
ｍと極めて薄い絶縁層や半導体層を形成しなくてはなら
ないため表面は平滑であることが必要であるが現状は数
＋ｎｍの凹凸を持っていた。In addition, in superconducting transistors and Josephson devices, several n
Since an extremely thin insulating layer or semiconductor layer must be formed, the surface must be smooth, but at present it has irregularities of several nanometers.
本発明はこの様な問題を解決するものであり、その目的
とするところは製造コストの安い多結晶体に於て高い臨
界電流密度を持つと共に薄膜ではデバイス化に必要な表
面モホロジーを確保したＴｌ系超伝導材料を得んとする
ものである。The present invention is intended to solve these problems, and its purpose is to develop Tl that has a high critical current density in a polycrystalline material that is low in production cost, and that has a surface morphology that is necessary for device fabrication in a thin film. The aim is to obtain superconducting materials.
［課題を解決するための手段］
１）Ｔｌ−Ｍ−Ｃｕ−０系超伝導物質（ここでＭはアル
カリ土類元素を示す）にＩｒを添加したこと２）Ｉｒ／
Ｃｕは０．００５〜０．０８の範囲内であることを特徴
とする。[Means for solving the problem] 1) Adding Ir to a Tl-M-Cu-0 based superconducting material (here M represents an alkaline earth element) 2) Adding Ir/
Cu is characterized by being within the range of 0.005 to 0.08.
［実施例］ 以下実施例に従い本発明の詳細な説明する。[Example] The present invention will be described in detail below with reference to Examples.
先ずターゲットを作る。所定量の酸化第二銅、三二酸化
タリウム、炭酸バリウム、炭酸カルシューム、酸化イリ
ジウムをボールミルにより混合分散させる。次にこの粉
末を３００ｋｇ／ｃｍ’で加圧成形した後８００°Ｃ〜
８８０ ’Ｃ酸素ガス雰囲気中で１時間焼成、表面層を
切削除去し２インチ厚ξ３ｍｍのターゲットを得る。First, create a target. Predetermined amounts of cupric oxide, thallium sesquioxide, barium carbonate, calcium carbonate, and iridium oxide are mixed and dispersed using a ball mill. Next, this powder is pressure-molded at 300 kg/cm' and then heated to 800°C~
The target was fired for 1 hour at 880'C in an oxygen gas atmosphere, and the surface layer was removed to obtain a target with a thickness of 2 inches and ξ3 mm.
次にＲＦマグネトロンスパッタでＭｇＯ（１００）単結
晶基板上に上記ターゲットを用い薄膜を形成する。この
時の成膜条件は、初期真空度： １・８〜２．３＊ＩＣ
１７Ｔｏｒｒ、使用ガス： アルゴン（７０％）酸素（
３０％）の混合ガス、出力１００〜１５５Ｗ、スパッタ
時のガス圧：１．５〜３．２＊１Ｏ−３Ｔｏｒｒ、基板
温度：１５０’Ｃ１成膜速度： ４〜８ｎｍ／ｍ１Ｊ
１、膜厚３ｏｏｏ〜３５００人である。尚基板は表面粗
さのバラツキによる臨界電流密度への影響を押さえるた
め研磨面ではなくへきかい面を用いた。Next, a thin film is formed on an MgO (100) single crystal substrate by RF magnetron sputtering using the above target. The film forming conditions at this time were: initial degree of vacuum: 1.8 to 2.3*IC
17 Torr, gas used: argon (70%) oxygen (
30%) mixed gas, output 100-155W, gas pressure during sputtering: 1.5-3.2*1O-3Torr, substrate temperature: 150'C1, film formation rate: 4-8nm/m1J
1. Film thickness is 300 to 3500 people. In order to suppress the influence of variations in surface roughness on the critical current density, the substrate was not polished but had a cracked surface.
次に８８０°Ｃ酸素ガス雰囲気中で５分画アニル処理、
酸素プラズマ中で１５時間酸素導入処理を行い酸化物超
伝導薄膜を得た。ここで酸素プラズマにより酸素を導入
しているのは加熱処理ではＴｌが飛び組成がずれるため
である。Next, 5-fraction annealing treatment at 880°C in an oxygen gas atmosphere,
Oxygen introduction treatment was performed in oxygen plasma for 15 hours to obtain an oxide superconducting thin film. The reason why oxygen is introduced by oxygen plasma here is that during heat treatment, Tl is removed and the composition is shifted.
得られた超伝導薄膜をイオンビームエツチングによりバ
ターニングした後臨界電流密度を４端子法により測定し
た。測定雰囲気はＨｅカス中（Ｈｅは熱伝導が良く試料
温度を均一化出来ると共に不活性であり試料の変質を防
ぐことが出来る）？！ＩＩ＋定温度は７７にで冷却には
極低温冷凍機（ダイキン工業製）を用いた。結果を比較
例（■ｒｇ加無し、添加量が適正範囲外のもの）と共に
第１表にボした。After the obtained superconducting thin film was patterned by ion beam etching, the critical current density was measured by a four-terminal method. Is the measurement atmosphere in He scum (He has good thermal conductivity and can equalize the sample temperature, and is inert and can prevent deterioration of the sample)? ! II+ constant temperature was 77, and a cryogenic refrigerator (manufactured by Daikin Industries) was used for cooling. The results are listed in Table 1 along with comparative examples (1) RG was not added, the amount added was outside the appropriate range.
第１表
表より判るように実際の応用にはまだ僅が足りないもの
もあるがＴｌ−Ｍ−Ｃｕ系超伝導材料（Ｍはアルカリ土
類元素）にＩｒを添加することより顕著に臨界電流密度
が向上している。これは工ｒの添加により電流を阻害す
る第２相の析出を抑制しているためと薄膜を平滑なもの
にしているためと考えられる。尚添加量はＩ ｒ ／
Ｃｕの比で０゜００５〜０．０８の範囲内が好ましい。As can be seen from Table 1, there are some things that are still insufficient for actual applications, but adding Ir to Tl-M-Cu based superconducting materials (M is an alkaline earth element) significantly increases the critical current. Density is improved. This is thought to be because the addition of phosphor suppresses the precipitation of the second phase that inhibits current flow and because the thin film is made smooth. The amount added is I r /
The Cu ratio is preferably within the range of 0.005 to 0.08.
添加量は少ないと効果はなく、多すぎると超伝導物質の
構造を破壊するため逆に臨界電流密度は但下する。If the amount added is too small, there will be no effect, and if it is too large, the structure of the superconducting material will be destroyed, and on the contrary, the critical current density will be lowered.
また臨界電流密度向上の上でも役立っている平滑性向上
は前にも述べたようにデバイス化の上でも良い結果をも
たらす。Furthermore, the improvement in smoothness, which is also useful in increasing the critical current density, also brings about good results in terms of device fabrication, as mentioned earlier.
実施例では薄膜に於て述べたが線材やバルクでも効果は
同じであり何等差し支えない。但し値段が高いため材料
使用量の少ない薄膜の方が適しているといえる。また高
臨界温度相の安定化のためｐｂで元素の一部を置換した
系でも効果は同じであり何等差し支えない。In the embodiments, a thin film was described, but the same effect can be achieved with a wire rod or a bulk film, and there is no problem. However, since it is expensive, thin films that require less material are more suitable. Furthermore, a system in which some of the elements are replaced with PB to stabilize the high critical temperature phase has the same effect and there is no problem.
［発明の効果コ
以上述べたように本発明によれば結晶の粒界部に析出し
電流を阻害する第２相を抑制すると共に材料を平滑化出
来るため製造コストの安い多結晶体でも高い臨界電流密
度を得ることが出来る。またデバイス化に必要な表面モ
ホロジーも良くなる。[Effects of the Invention] As described above, according to the present invention, it is possible to suppress the second phase that precipitates at the grain boundaries of crystals and inhibit current flow, and to smooth the material, so that even polycrystalline materials, which are inexpensive to manufacture, can have high criticality. Current density can be obtained. In addition, the surface morphology required for device fabrication also improves.
尚この材料は配線、電磁波センサー 磁束メモリ、ジョ
セフソン素子、超伝導トランジスタ、磁気シールド材、
送電ケーブル、通信ケーブル、超伝導モータ、超伝導マ
グネット等に応用できる。This material is used for wiring, electromagnetic wave sensors, magnetic flux memory, Josephson elements, superconducting transistors, magnetic shielding materials,
It can be applied to power transmission cables, communication cables, superconducting motors, superconducting magnets, etc.
以上 出願人 セイコーエプソン株式会社 代理人弁理士 鈴木喜三部 他１名that's all Applicant: Seiko Epson Corporation Representative Patent Attorney Kizobe Suzuki and 1 other person
Claims (1)
カリ土類元素を示す）にＩｒを添加したことを特徴とす
るＴｌ系超伝導材料。 ２）Ｉｒ／Ｃｕは０．００５〜０．０８の範囲内である
ことを特徴とする特許請求の範囲第１項記載のＴｌ系超
伝導材料。[Scope of Claims] 1) A Tl-based superconducting material characterized in that Ir is added to a Tl-M-Cu-O based superconducting material (here, M represents an alkaline earth element). 2) The Tl-based superconducting material according to claim 1, wherein Ir/Cu is within the range of 0.005 to 0.08.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2181205A JPH0467691A (en) | 1990-07-09 | 1990-07-09 | Tl-based superconductive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2181205A JPH0467691A (en) | 1990-07-09 | 1990-07-09 | Tl-based superconductive material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0467691A true JPH0467691A (en) | 1992-03-03 |
Family
ID=16096674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2181205A Pending JPH0467691A (en) | 1990-07-09 | 1990-07-09 | Tl-based superconductive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0467691A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268799B1 (en) | 1996-04-10 | 2001-07-31 | Seiko Epson Corporation | Light-source lamp unit, light-source device and projection-type display apparatus and method of use |
| JP2009152021A (en) * | 2007-12-20 | 2009-07-09 | Nec Fielding Ltd | Image projection device, light source lifetime prediction method of the image projection device |
-
1990
- 1990-07-09 JP JP2181205A patent/JPH0467691A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268799B1 (en) | 1996-04-10 | 2001-07-31 | Seiko Epson Corporation | Light-source lamp unit, light-source device and projection-type display apparatus and method of use |
| US6690282B2 (en) | 1996-04-10 | 2004-02-10 | Seiko Epson Corporation | Light-source lamp unit, light-source device and projection-type display apparatus |
| US7006004B2 (en) | 1996-04-10 | 2006-02-28 | Seiko Epson Corporation | Light-source lamp unit, light-source device and projection-type display apparatus |
| JP2009152021A (en) * | 2007-12-20 | 2009-07-09 | Nec Fielding Ltd | Image projection device, light source lifetime prediction method of the image projection device |
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