JPH01219019A - Production of oxide superconductor film - Google Patents
Production of oxide superconductor filmInfo
- Publication number
- JPH01219019A JPH01219019A JP63047723A JP4772388A JPH01219019A JP H01219019 A JPH01219019 A JP H01219019A JP 63047723 A JP63047723 A JP 63047723A JP 4772388 A JP4772388 A JP 4772388A JP H01219019 A JPH01219019 A JP H01219019A
- Authority
- JP
- Japan
- Prior art keywords
- oxide superconductor
- film
- superconductor film
- copper
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010949 copper Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 238000002425 crystallisation Methods 0.000 claims abstract description 14
- 230000008025 crystallization Effects 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 239000000470 constituent Substances 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 15
- 238000000151 deposition Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract description 3
- 239000005751 Copper oxide Substances 0.000 abstract description 2
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 2
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910003098 YBa2Cu3O7−x Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は酸化物超伝導体膜の製造方法に関し、特にエレ
クトロニクスへの応用に有用な結晶成長温度の低温化を
図った酸化物超伝導体膜の製造方法に関するものである
。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a method for producing an oxide superconductor film, and in particular to an oxide superconductor film with a low crystal growth temperature that is useful for electronics applications. The present invention relates to a method for manufacturing a membrane.
（従来の技術）
液体窒素温度（７７Ｋ）以上の高い超伝導転移温度をも
つＹＢａ２Ｃｕ３Ｏ７−ｘで代表される酸化物超伝導体
膜を形成するためには、高温超伝導性の結晶相を成長さ
せる必要があり、成膜時または成膜後における高温加熱
処理が不可欠である。特に、従来からよく用いられてい
る成膜後の熱処理の温度は９００°Ｃ前後と非常に高い
。酸化物超伝導体膜をエレクトロニクス分野へ応用する
場合には、基板やデバイスを構成する他の接触する膜と
の熱的相互拡散を防ぐために結晶成長温度の低温化が重
要となる。(Prior art) In order to form an oxide superconductor film represented by YBa2Cu3O7-x, which has a high superconducting transition temperature higher than the liquid nitrogen temperature (77 K), a high-temperature superconducting crystal phase must be grown. Therefore, high-temperature heat treatment during or after film formation is essential. In particular, the temperature of heat treatment after film formation, which has been commonly used in the past, is extremely high at around 900°C. When applying oxide superconductor films to the electronics field, it is important to lower the crystal growth temperature to prevent thermal interdiffusion with other contacting films that make up the substrate or device.
従来の代表的な酸化物超伝導体膜の結晶成長の手段とし
て、ピー・チャウダリ（Ｐ、 Ｃｈａｕｄｈａｒｉ）ら
によって１９８７年にフィジカル・レビュ、レターズ（
Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌｅｔｔｅｒｓ）第
５８巻、２６８４〜２６８６ページで提案された方法が
ある。この方法を第２図（ａ）〜（ｂ）を用いて工程順
に説明する。まず、チタン酸ストロンチウム（ＳｒＴｉ
Ｏ３Ｘ１００）単結晶からなる基板２１上に、１０−’
〜１Ｏ−３Ｔｏｒｒの酸素雰囲気中で３連真空蒸着装置
を用いてイツトリウム（Ｙ）、バリウム（Ｂａ）、銅（
Ｃｕ）を同時蒸着し、ＹＢａ２Ｃｕ３Ｏ７−ｘからなる
酸化物超伝導体膜２２を形成する（第２図（ａ））。蒸
着時の基板温度は約４００°Ｃである。引き続き、この
酸化物超伝導体膜２２を酸素雰囲気巾約９００°Ｃで熱
処理して結晶化し、高温超伝導性の酸化物超伝導体膜２
３を形成する（第２図（ｂ））。As a conventional means of crystal growth for typical oxide superconductor films, P. Chaudhari et al. published Physical Review Letters (1987).
There is a method proposed in Physical Review Letters, Vol. 58, pp. 2684-2686. This method will be explained step by step using FIGS. 2(a) to 2(b). First, strontium titanate (SrTi
10-' on a substrate 21 made of a single crystal O3
Yttrium (Y), barium (Ba), copper (
Cu) is simultaneously vapor-deposited to form an oxide superconductor film 22 made of YBa2Cu3O7-x (FIG. 2(a)). The substrate temperature during vapor deposition is approximately 400°C. Subsequently, this oxide superconductor film 22 is heat-treated in an oxygen atmosphere width of approximately 900°C to crystallize it, thereby forming a high-temperature superconducting oxide superconductor film 2.
3 (Fig. 2(b)).
（発明が解決しようとする課題）゛
この方法に代表される従来技術では、イツトリウム系酸
化物超伝導体膜の被着時における構成金属の組成比は化
学量論比（例えば、
Ｙ：Ｂａ：Ｃｕ量１：２：３）に近い値が用いられてい
た。こうした組成の酸化物超伝導体膜を結晶化して高温
超伝導性を有する膜にするためには、成膜後約・９００
°Ｃという高い温度で熱処理しなければならなかった。(Problems to be Solved by the Invention) In the conventional technology represented by this method, the composition ratio of the constituent metals at the time of depositing the yttrium-based oxide superconductor film is a stoichiometric ratio (for example, Y:Ba: A value close to Cu amount of 1:2:3) was used. In order to crystallize an oxide superconductor film with such a composition into a film having high temperature superconductivity, it is necessary to
It had to be heat treated at a high temperature of °C.
その結果、基板はこうした高温でも酸化物超伝導体膜と
相互拡散の少ない５ｒＴｉｏ３やマグネシア（ＭｇＯ）
などの特殊材料に限られていた。さらに、酸化物超伝導
体膜を実際のエレクトロニクスデバイスに応用する場合
には他の膜との多層構造となることが多いが、高温熱処
理によって両者の膜との間で相互拡散を生じて超伝導特
性が劣化するといった問題があった。他の金属膜や半導
体膜とのコンタクト部分では、これらの膜が酸化物超伝
導体膜の酸素と反応して絶縁体層を形成し、コンタクト
不良の問題を発生させるということも考えられる。As a result, the substrate is made of 5rTio3 or magnesia (MgO), which has low interdiffusion with the oxide superconductor film even at such high temperatures.
It was limited to special materials such as Furthermore, when oxide superconductor films are applied to actual electronic devices, they often have a multilayer structure with other films, but high-temperature heat treatment causes interdiffusion between the two films, resulting in superconductivity. There was a problem that the characteristics deteriorated. It is also conceivable that in contact areas with other metal films or semiconductor films, these films react with oxygen in the oxide superconductor film to form an insulator layer, causing contact failure problems.
本発明の目的は、このような従来技術の欠点を改善した
酸化物超伝導体膜の製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing an oxide superconductor film that overcomes the drawbacks of the prior art.
（課題を解決するための手段）
本発明は、構成元素として銅を有する酸化物超伝導体膜
の製造方法において、この酸化物超伝導体膜の被着時に
おける平均的な銅の組成が化学量論的組成よりも５０ａ
ｔ％以内で過剰となるように前記酸化物超伝導体膜を形
成した後、酸素を含む雰囲気中で熱処理して高温超伝導
化することを特徴とする酸化物超伝導体膜の製造方法で
ある。(Means for Solving the Problems) The present invention provides a method for manufacturing an oxide superconductor film having copper as a constituent element, in which the average copper composition at the time of deposition of the oxide superconductor film is chemically 50a than stoichiometric composition
A method for producing an oxide superconductor film, characterized in that the oxide superconductor film is formed to have an excess of t% or less, and then heat-treated in an oxygen-containing atmosphere to make it a high-temperature superconductor. be.
また、本発明は、構成元素として銅を有する酸化物超伝
導体膜の製造方法において、この酸化物超伝導体膜の被
着時における平均的な銅の組成を化学量論的組成よりも
５０ａｔ％以内で過剰にするとともに、前記酸化物超伝
導体膜の被着時に結晶化に充分な基板加熱を行なうこと
を特徴とする酸化物超伝導体膜の製造方法である。The present invention also provides a method for producing an oxide superconductor film having copper as a constituent element, in which the average copper composition at the time of deposition of the oxide superconductor film is 50 atm lower than the stoichiometric composition. % or less, and heating the substrate sufficiently for crystallization during deposition of the oxide superconductor film.
（作用）
本発明では、Ｃｕを含む酸化物超伝導体膜を形成する際
に、被着時の膜組成を化学量論的組成に比較してＣｕ過
剰とすることにより、成膜後の熱処理工程でこめＣｕに
基づく酸化銅（Ｃｕｂ）をフラックスとして作用させ、
酸化物超伝導体膜の結晶化温度を低下させることができ
る。膜中に含まれる過剰Ｃｕ量の増加により結晶化温度
は減少するが、このＣｕ量が１０ａｔ％以下ではその変
化は小さく、約５０ａｔ％を越えるとＣｕＯの結晶化が
優先的に起こる。(Function) In the present invention, when forming an oxide superconductor film containing Cu, the film composition at the time of deposition is made to have an excess of Cu compared to the stoichiometric composition. In the process, copper oxide (Cub) based on copper is used as a flux,
The crystallization temperature of the oxide superconductor film can be lowered. Although the crystallization temperature decreases as the amount of excess Cu contained in the film increases, the change is small when the amount of Cu is less than 10 at%, and when it exceeds about 50 at%, crystallization of CuO occurs preferentially.
従って、過剰Ｃｕ量は１０〜５０ａｔ％の範囲であるこ
とが好ましい。この方法では、酸化物超伝導体膜の被着
時におけるＣｕ量を制御することだけで結晶化温度の低
下を図ることができる。その結果、基板材料の選択の余
地も増え、しかも接触する他の膜との熱的相互拡散も軽
減されるため、エレクトロニクスデバイスへの応用の可
能性も増大する。Therefore, the amount of excess Cu is preferably in the range of 10 to 50 at%. In this method, the crystallization temperature can be lowered simply by controlling the amount of Cu during deposition of the oxide superconductor film. As a result, there is more room for selection of substrate materials, and thermal interdiffusion with other films in contact is also reduced, increasing the possibility of application to electronic devices.
また、酸化物超伝導体膜の被着時における基板加熱処理
は成膜後の熱処理よりも効果的に結晶化温度の低下に寄
与する。そのため、上記と同様な理由で酸化物超伝導体
膜のエレクトロニクスデバイスへの応用の可能性はさら
に増すことが期待できる。Further, substrate heat treatment during deposition of the oxide superconductor film contributes to lowering the crystallization temperature more effectively than heat treatment after film formation. Therefore, for the same reason as mentioned above, it is expected that the possibility of application of oxide superconductor films to electronic devices will further increase.
（実施例Ｉ）
まず、Ｙ−Ｂａ−Ｃｕ−０系ターゲツトを用いたスパッ
タ法により、サファイヤ（Ｒ−Ａｌ□０３）基板１１上
に、ＹＢａ２Ｃｕ３Ｏ７−ｘよりＣｕが約４０ａｔ％過
剰な酸化物超伝導体膜１２を厚さ０．８ｐｍ被着する（
第１図（ａ））。(Example I) First, by a sputtering method using a Y-Ba-Cu-0 based target, an oxide containing approximately 40 at% more Cu than YBa2Cu3O7-x was deposited on a sapphire (R-Al□03) substrate 11. Conductor film 12 is deposited to a thickness of 0.8 pm (
Figure 1(a)).
ＹＢａ２Ｃｕ３Ｏ７−ｘは液体窒素温度以上の高温超伝
導性を示す結晶相の組成である。スパッタはアルゴン（
Ａｒ）と酸素（０２）との混合ガス雰囲気中で行なう。YBa2Cu3O7-x has a composition of a crystalline phase that exhibits high-temperature superconductivity above the liquid nitrogen temperature. Sputtering is done using argon (
The process is carried out in a mixed gas atmosphere of Ar) and oxygen (02).
この段階では酸化物超伝導体膜工２は通常アモルファス
かアモルファスに近い多結晶体で超伝導性は示さない。At this stage, the oxide superconductor membrane 2 is usually amorphous or a polycrystalline material close to amorphous, and does not exhibit superconductivity.
そこで引き続き、酸化物超伝導体膜１２を酸素フロー中
８００°Ｃ〜９００°Ｃで数時間熱処理し、さらに徐冷
して高温超伝導性の酸化物超伝導体膜１３を形成する（
第１図（ｂ））。結晶化したダレインはＹＢａ２Ｃｕ３
０□−エの化学量論的組成をもつ斜方晶系である。ダレ
インサイズは熱処理温度の増加に伴ない増加するが、９
００°Ｃでは３０ｐｍ程度まで達する。Therefore, the oxide superconductor film 12 is subsequently heat-treated at 800°C to 900°C in an oxygen flow for several hours, and then slowly cooled to form a high-temperature superconducting oxide superconductor film 13 (
Figure 1(b)). Crystallized dalein is YBa2Cu3
It is an orthorhombic system with a stoichiometric composition of 0□-E. The dalein size increases with increasing heat treatment temperature, but 9
At 00°C, it reaches about 30pm.
この値は、成膜時に化学量論的組成をもつ膜を同じ条件
で熱処理した場合の１１１ｍ以下の値に比べて著しく大
きい。これは、酸化物超伝導体膜１２中の過剰なＣｕが
フラックスとして作用し、
ＹＢａ２Ｃｕ３０□−８の結晶化温度を減少させている
ためと考えられる。This value is significantly larger than the value of 111 m or less when a film having a stoichiometric composition is heat-treated under the same conditions during film formation. This is considered to be because the excess Cu in the oxide superconductor film 12 acts as a flux and reduces the crystallization temperature of YBa2Cu30□-8.
また、本実験の酸化物超伝導体膜１３の転移温度は８２
０°Ｃの熱処理でも液体窒素温度以上であるが、成膜時
に化学量論的組成の膜では同じ転移温度を得るのに９２
０°Ｃの熱処理が必要である。こうした結晶化温度の低
下は基板材料の選択の幅を拡げる。In addition, the transition temperature of the oxide superconductor film 13 in this experiment was 82
Even with heat treatment at 0°C, the temperature is higher than the liquid nitrogen temperature, but with a film with a stoichiometric composition during film formation, it takes 92°C to obtain the same transition temperature.
Heat treatment at 0°C is required. Such a reduction in crystallization temperature expands the range of choices for substrate materials.
９００°Ｃ以上の熱処理を必要とする膜では熱拡散の問
題を生じるためサファイヤ基板は使用できないが、本発
明による方法ではこれが可能となる。さらに、過剰Ｃｕ
量の最適化により、結晶化温度を一層低下させることに
より、他の多くの基板材料の使用が期待できる。A sapphire substrate cannot be used in a film that requires heat treatment at 900° C. or higher due to the problem of thermal diffusion, but this becomes possible with the method of the present invention. Furthermore, excess Cu
Through quantity optimization, the use of many other substrate materials can be anticipated by further lowering the crystallization temperature.
（実施例ＩＩ）
実施例工と同様の方法及び条件で酸化物超伝導体膜を被
着す−るが、本実施例の基板温度は６００°Ｃ〜７００
°Ｃである。成膜後、酸素雰囲気中で徐冷し、高温超伝
導性の酸化物超伝導体膜を形成する。本実施例の温度範
囲ではダレインサイズは実施例工の熱処理した場合と比
べ小さいが、転移温度はほぼ同等である。このように、
膜中の全Ｃｕ量が過剰となる条件で、しかも基板を高温
で加熱しながら被着した酸化物超伝導体膜は実施例工よ
りもさらに低い温度で良好な超伝導特性が得られる。従
って、基板材料の選択においても自由度が増し、接触す
る他の膜との熱拡散による特性劣化の問題も軽減される
ため、エレクトロニクスデバイスへの応用の可能性が高
まる。(Example II) An oxide superconductor film was deposited using the same method and conditions as in the example, but the substrate temperature in this example was 600°C to 700°C.
It is °C. After the film is formed, it is slowly cooled in an oxygen atmosphere to form a high-temperature superconducting oxide superconductor film. In the temperature range of this example, the dalein size is smaller than that of the heat treated case of the example, but the transition temperature is almost the same. in this way,
The oxide superconductor film deposited under conditions where the total amount of Cu in the film is excessive and while heating the substrate at a high temperature can obtain good superconducting properties at a lower temperature than that of the example. Therefore, the degree of freedom is increased in the selection of substrate materials, and the problem of property deterioration due to thermal diffusion with other films in contact is alleviated, increasing the possibility of application to electronic devices.
本実施例では、被着時におけるＣｕの組成が化学量論的
組成よりも約４０ａｔ％過剰なＹ−Ｂａ−Ｃｕ−０薄膜
に関して説明したが、５０ａｔ％以内であれば過剰なＣ
ｕによる結晶化温度の低減効果が認められた。また、Ｙ
の代わりにＥｕ、 Ｇｄ、 Ｄｙ、 Ｅｒ、 Ｙｂなと
他の希土類元素を構成元素とする酸化物超伝導体やＬａ
−８ｒ−Ｃｕ−０系など他の酸化物超伝導体の薄膜に適
用することができる。基板にはサファイヤを使用したが
、ＳｒＴｉＯ３やＭｇＯはもとより表面をＳｉＯ□で被
覆したＳｉウェーハなと半導体のプロセスで一般的に用
いられる基板も使用できる。本実施例ではスパッタ法に
より酸化物超伝導体膜を被着したが、蒸着法やＣＶＤ法
など他の成膜技術で被着することもできる。In this example, a Y-Ba-Cu-0 thin film was explained in which the Cu composition at the time of deposition was about 40 at% excess than the stoichiometric composition.
The effect of reducing the crystallization temperature by u was observed. Also, Y
Oxide superconductors containing other rare earth elements such as Eu, Gd, Dy, Er, Yb and La
It can be applied to thin films of other oxide superconductors such as -8r-Cu-0 series. Although sapphire was used as the substrate, substrates commonly used in semiconductor processes such as SrTiO3, MgO, or Si wafers whose surfaces are coated with SiO□ can also be used. In this example, the oxide superconductor film was deposited by sputtering, but it can also be deposited by other film forming techniques such as vapor deposition or CVD.
（発明の効果）
本発明によれば、簡単な方法で酸化物超伝導体膜の結晶
化温度を低減できる。その結果、基板材料の選択の自由
度が増すとともに、接触する他の膜との熱的相互拡散が
軽減されるため、エレクトロニクスデバイスへの応用の
可能性が高まる。(Effects of the Invention) According to the present invention, the crystallization temperature of an oxide superconductor film can be reduced by a simple method. As a result, the degree of freedom in selecting the substrate material increases and thermal interdiffusion with other films in contact is reduced, increasing the possibility of application to electronic devices.
第１図（ａ）〜（ｂ）は本発明の酸化物超伝導体膜の製
造方法を工程順に示す断面図、第２図（ａ）〜（ｂ）は
従来の酸化物超伝導体膜の製造方法を示す断面図である
。
図において、１１．２１は基板、１２．２２は酸化物超
伝導体膜、１３．２３は高温超伝導性の酸化物超伝導体
膜である。FIGS. 1(a) to (b) are cross-sectional views showing the manufacturing method of the oxide superconductor film of the present invention in order of steps, and FIGS. 2(a) to (b) are cross-sectional views of the conventional oxide superconductor film. It is a sectional view showing a manufacturing method. In the figure, 11.21 is a substrate, 12.22 is an oxide superconductor film, and 13.23 is a high temperature superconducting oxide superconductor film.
Claims (1)
方法において、この酸化物超伝導体膜の被着時における
平均的な銅の組成が化学量論的組成よりも５０ａｔ％以
内で過剰となるように前記酸化物超伝導体膜を形成した
後、酸素を含む雰囲気中で熱処理して高温超伝導化する
ことを特徴とする酸化物超伝導体膜の製造方法。 ２、構成元素として銅を有する酸化物超伝導体膜の製造
方法において、この酸化物超伝導体膜の被着時における
平均的な銅の組成を化学量論的組成よりも５０ａｔ％以
内で過剰にするとともに、前記酸化物超伝導体膜の被着
時に結晶化に充分な基板加熱を行なうことを特徴とする
酸化物超伝導体膜の製造方法。[Claims] 1. In a method for producing an oxide superconductor film having copper as a constituent element, the average copper composition at the time of deposition of the oxide superconductor film is lower than the stoichiometric composition. A method for producing an oxide superconductor film, characterized in that the oxide superconductor film is formed so that the amount of the oxide superconductor film is in excess of 50 at% or less, and then heat-treated in an oxygen-containing atmosphere to make it a high-temperature superconductor. . 2. In a method for producing an oxide superconductor film having copper as a constituent element, the average copper composition at the time of deposition of the oxide superconductor film is in excess of the stoichiometric composition by within 50 at%. and heating the substrate sufficiently for crystallization during deposition of the oxide superconductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63047723A JPH01219019A (en) | 1988-02-29 | 1988-02-29 | Production of oxide superconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63047723A JPH01219019A (en) | 1988-02-29 | 1988-02-29 | Production of oxide superconductor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01219019A true JPH01219019A (en) | 1989-09-01 |
Family
ID=12783244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63047723A Pending JPH01219019A (en) | 1988-02-29 | 1988-02-29 | Production of oxide superconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01219019A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851957A (en) * | 1992-05-12 | 1998-12-22 | American Superconductor Corporation | Oxide superconductor precursors |
| JP2003124534A (en) * | 2001-10-12 | 2003-04-25 | Fujitsu Ltd | High-temperature superconductor film and its forming method, and superconducting element |
| JP2008514545A (en) * | 2004-10-01 | 2008-05-08 | アメリカン・スーパーコンダクター・コーポレーション | Thick film superconducting film with improved functions |
-
1988
- 1988-02-29 JP JP63047723A patent/JPH01219019A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851957A (en) * | 1992-05-12 | 1998-12-22 | American Superconductor Corporation | Oxide superconductor precursors |
| US6219901B1 (en) | 1992-05-12 | 2001-04-24 | American Superconductor Corporation | Oxide superconductor precursors |
| JP2003124534A (en) * | 2001-10-12 | 2003-04-25 | Fujitsu Ltd | High-temperature superconductor film and its forming method, and superconducting element |
| JP2008514545A (en) * | 2004-10-01 | 2008-05-08 | アメリカン・スーパーコンダクター・コーポレーション | Thick film superconducting film with improved functions |
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