JPH0464243A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0464243A JPH0464243A JP17523190A JP17523190A JPH0464243A JP H0464243 A JPH0464243 A JP H0464243A JP 17523190 A JP17523190 A JP 17523190A JP 17523190 A JP17523190 A JP 17523190A JP H0464243 A JPH0464243 A JP H0464243A
- Authority
- JP
- Japan
- Prior art keywords
- thermal conductivity
- silicon carbide
- heat dissipation
- semiconductor device
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 12
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims abstract description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011104 metalized film Substances 0.000 claims abstract 4
- 229910052790 beryllium Inorganic materials 0.000 claims abstract 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 238000005219 brazing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000000919 ceramic Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 description 27
- 238000010586 diagram Methods 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体レーザのパッケージに好適な放熱基板
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat dissipation substrate suitable for a semiconductor laser package.
従来、高熱伝導性セラミックスを半導体装置に応用した
例は多く、例えば、特公昭６３−４２４１４号公報のよ
うに、高熱伝導炭化ケイ素セラミック上に半導体素子を
搭載して、良好な放熱特性が得られたことが記載されて
いる。この中で、高熱伝導炭化ケイ素セラミックの熱膨
張係数が、８１半導体素子の熱膨張係数とほぼ同様であ
るため、温度サイクル等の信頼性試験についても良好な
結果が得られたと記載されている。In the past, there have been many examples of applying highly thermally conductive ceramics to semiconductor devices. For example, as in Japanese Patent Publication No. 63-42414, a semiconductor element is mounted on a highly thermally conductive silicon carbide ceramic to obtain good heat dissipation characteristics. It is stated that In this document, it is stated that since the thermal expansion coefficient of the high thermal conductivity silicon carbide ceramic is almost the same as that of the 81 semiconductor element, good results were obtained in reliability tests such as temperature cycling.
上記従来技術は、半導体素子を搭載するために必要な放
熱基板の諸特性及び製造方法について言及しているもの
の、使用すべき周波数帯については特に考慮されていな
い。また、上記技術に見られる様な、高熱伝導セラミッ
クスを応用した半導体装置の場合、常用周波数帯は１Ｍ
Ｈｚであり。Although the above-mentioned conventional technology mentions various characteristics of a heat dissipation board necessary for mounting a semiconductor element and a manufacturing method, it does not particularly consider the frequency band to be used. In addition, in the case of semiconductor devices that apply high thermal conductivity ceramics, as seen in the above technology, the common frequency band is 1M.
It is Hz.
これを超える周波数帯で、放熱基板の特性が半導体装置
の電気的特性に影響するか否かについては特に言及され
ていない。There is no particular mention of whether or not the characteristics of the heat dissipation substrate affect the electrical characteristics of the semiconductor device in a frequency band exceeding this.
本発明の目的は、放熱性の優れた半導体レーザーパッケ
ージに好適な誘電率が可変である放熱基板を提供するこ
とにあり、また、本発明により、高周波領域であるＩＧ
Ｈｚ付近で、半導体レーザーパッケージで発生する共振
問題を解決することにある。An object of the present invention is to provide a heat dissipation substrate with a variable dielectric constant suitable for a semiconductor laser package with excellent heat dissipation.
The objective is to solve the resonance problem that occurs in semiconductor laser packages around Hz.
上記目的を達成するために、本発明は高熱伝導性炭化ケ
イ素セラミックスに酸化アルミニウムを添加することで
、セラミックスの誘電率を可変にしたものである。In order to achieve the above object, the present invention adds aluminum oxide to highly thermally conductive silicon carbide ceramics to make the dielectric constant of the ceramics variable.
酸化ベリリウムを含有する炭化ケイ素セラミックスは、
酸化アルミニウムの添加により、その誘電率が可変とな
る。しかし、その添加量が０．１５重量％を越えると、
熱伝導率が２．ＯＷ／ａ１１℃以下。Silicon carbide ceramics containing beryllium oxide are
The addition of aluminum oxide makes its dielectric constant variable. However, if the amount added exceeds 0.15% by weight,
Thermal conductivity is 2. OW/a 11℃ or less.
そして、比抵抗が１０６Ω国以下となり、半導体装置の
基板としては、その特性を満足しなくなる。Then, the specific resistance becomes less than 106Ω, and the substrate no longer satisfies its characteristics as a substrate for a semiconductor device.
従って、熱伝導率及び比抵抗が従来の高熱伝導炭化ケイ
素セラミックスに劣ることなく、且つ、必要な所定の誘
電率を得るためには、酸化アルミニウムの添加量が、０
．０５〜０．１５重量％であることが望ましい。Therefore, in order to maintain thermal conductivity and resistivity comparable to those of conventional high thermal conductivity silicon carbide ceramics, and to obtain the required dielectric constant, the amount of aluminum oxide added must be 0.
．． The amount is preferably 0.05 to 0.15% by weight.
〈実施例１〉
純度９８％の炭化ケイ素粉末（平均粒径２μｍ）１００
重量部、酸化ベリリウム粉末１重量部に、酸化アルミニ
ウムをそれぞれ、０，０．０５゜０．１０，０．１５，
０．２ 重量部配合し、バインダ及び溶剤を加え充分に
混合し、造粒した後、直径３００ｍ、厚さ２ｍ＋に仮成
形した。次いで、この仮成形体を黒鉛ダイス内に組み込
み、真空ホットプレス装置により、真空度１０−ａ〜１
０″″！１Ｔｏｒｒ、圧力２００ ｋｇ／ａｎ？、温度
２１００℃の条件下で焼結した。この様にして得られた
相対密度９８％以上のそれぞれの焼結体を、両面研削し
、口２５．４ｍに切断した。熱伝導率はレーザフラッシ
ュ法により熱拡散率を測定して算出した。誘電率及び比
抵抗は、基極の両面に電極をつけて、室温で測定した。<Example 1> Silicon carbide powder with a purity of 98% (average particle size 2 μm) 100
0, 0.05°, 0.10, 0.15°, aluminum oxide to 1 part by weight of beryllium oxide powder, respectively.
0.2 parts by weight was added, a binder and a solvent were added, and the mixture was thoroughly mixed. After granulation, it was preformed to a diameter of 300 m and a thickness of 2 m+. Next, this temporary molded body is assembled into a graphite die, and the degree of vacuum is 10-a to 1 using a vacuum hot press device.
0″″! 1 Torr, pressure 200 kg/an? , sintered at a temperature of 2100°C. Each of the sintered bodies thus obtained, each having a relative density of 98% or more, was ground on both sides and cut into a length of 25.4 m. Thermal conductivity was calculated by measuring thermal diffusivity using a laser flash method. The dielectric constant and specific resistance were measured at room temperature by attaching electrodes to both sides of the base electrode.
第１図は、酸化アルミニウム含有量と各特性値の関係を
示す。FIG. 1 shows the relationship between aluminum oxide content and each characteristic value.
誘電率を２５０以上で安定に得るには、酸化アルミニウ
ム含有量が０．０５重量以上必要であるが、０．１５重
量％を越えると熱伝導率が２．ＯＷ／■℃より低くなる
ため、酸化アルミニウム含有量の範囲は０．０５〜０．
１５重量％が好ましい。To stably obtain a dielectric constant of 250 or more, the aluminum oxide content must be 0.05% by weight or more, but if it exceeds 0.15% by weight, the thermal conductivity will decrease to 2.5% by weight. Since it is lower than OW/■°C, the aluminum oxide content ranges from 0.05 to 0.
15% by weight is preferred.
〈実施例２〉
第２図は各種セラミックスを放熱基板として実装し、熱
抵抗を測定するための構造図である。放熱基板２のサイ
ズは５ ｍ Ｘ ５■Ｘ０．６３５閣で、上、下面面に
はメタライズを施した。半導体レーザ１のサイズは４
ａｎ Ｘ ４ ｍ Ｘ ０ 、４０６ ｍで、放熱基板
２と半導体レーザ１、放熱基板２と銅ステム３の間はそ
れぞれＰ ｂ −５Ｓ ｎ 、 Ｐ ｂ −４０Ｓｎは
んだで接合した。また、接合層の厚さは０．１ｍｍ以下
とした。<Example 2> FIG. 2 is a structural diagram for mounting various ceramics as a heat dissipation substrate and measuring thermal resistance. The size of the heat dissipation board 2 was 5 m x 5 m x 0.635 m, and the upper and lower surfaces were metallized. The size of semiconductor laser 1 is 4
An X 4 m Further, the thickness of the bonding layer was 0.1 mm or less.
第３図は、第２図で説明した熱抵抗測定サンプルを使用
して、各種セラミックス毎に測定した一定熱量印加時間
と熱抵抗の関係を示した図である。FIG. 3 is a diagram showing the relationship between constant heat application time and thermal resistance measured for each type of ceramic using the thermal resistance measurement sample described in FIG. 2.
印加時間が大きくなるにつれて、各種セラミックス間の
熱抵抗差は大きくなる。この中で１本発明の放熱基板は
良好な結果を示し、ＡＱＮ等と比較して、熱抵抗は低く
なった。As the application time increases, the difference in thermal resistance between various ceramics increases. Among these, one of the heat dissipating substrates of the present invention showed good results, and the thermal resistance was lower than that of AQN and the like.
〈実施例３〉
第４図は、本発明の放熱基板を半導体レーザパッケージ
に実装した場合の模式図である。放熱基板６の上下両面
にはＴ ｉ ／ Ｐ ｔ ／ Ａ ｕの３層連続蒸着膜
メタライズを施し、サイズを１ ｘｉ Ｘ ０ 、５ｍ
Ｘ ０ 、２ ｍ とした。放熱基板６と半導体レー
ザ５、放熱基板６と金属ステム６は、それぞれ、Ｐｂ−
６０Ｓｎ、Ａｕ−２０５ｎのはんだで接合した。また、
半導体レーザ上面はＰ極とし、φ２０μｍの金線を用い
て正極と接続した。一方、半導体レーザ下面のＮ極は、
Ａｕ−２０Ｓｎはんだの接合部を通し、放熱基板の上面
メタライズと接し、金線９を通して、金属ステム７に接
地した。このパッケージ構造で、放熱基板６をＡＲＮと
して、応答周波数ＩＧＨｚで発振のテストを行なったと
ころ、共振が発生し必要な発振スペクトルが得ら乳なか
った。<Example 3> FIG. 4 is a schematic diagram when the heat dissipation substrate of the present invention is mounted on a semiconductor laser package. The upper and lower surfaces of the heat dissipation substrate 6 are metallized with a three-layer continuous vapor deposition film of T i / P t / Au, and the size is 1 x x 0, 5 m.
X 0 was set to 2 m. The heat dissipation board 6 and the semiconductor laser 5, and the heat dissipation board 6 and the metal stem 6 are each made of Pb-
It was joined with 60Sn and Au-205n solder. Also,
The top surface of the semiconductor laser was made into a P pole, and connected to the positive electrode using a gold wire with a diameter of 20 μm. On the other hand, the N pole on the bottom surface of the semiconductor laser is
It was passed through the Au-20Sn solder joint, brought into contact with the upper surface metallization of the heat dissipation board, and was grounded to the metal stem 7 through the gold wire 9. When an oscillation test was conducted with this package structure at a response frequency of IGHz using the heat dissipation board 6 as ARN, resonance occurred and the required oscillation spectrum could not be obtained.
そこで、第５図に示すような等価回路を考えて共振周波
数が回路の１／Ｐ丁ごにほぼ、比例することから、放熱
基板６を従来の高熱伝導ＳｉＣに置き換えてテストした
が、ＡＱＮの場合と同様に良好な結果が得られなかった
。そこで放熱基板６を本発明の放熱基板に置き換えたと
ころ、良好な応答性が得られた。ここで使用したＡＱＮ
の誘電率は９、従来の高熱伝導ＳｉＣは４ｏ、そして、
本発明の放熱基板は、２５０〜５００である。第４図で
説明したパッケージの場合、インダクタンスＬの発生主
要因は金線８と考えられる。また、抵抗Ｒはほぼ一定と
考えられるので、放熱基板の容量Ｃを変化させた場合、
共振周波数は１／Ｋにほぼ比例すると考えられる。従っ
て、本発明の放熱基板を使用した場合、共振周波数はＡ
ＱＮの場合と比較して１７５〜１／７、低くなったと考
察される。Therefore, considering the equivalent circuit shown in Fig. 5, and since the resonant frequency is approximately proportional to 1/P of the circuit, we replaced the heat dissipation board 6 with a conventional high thermal conductivity SiC and tested it. As usual, good results were not obtained. Therefore, when the heat dissipation board 6 was replaced with the heat dissipation board of the present invention, good responsiveness was obtained. AQN used here
The dielectric constant of is 9, conventional high thermal conductivity SiC is 4o, and
The heat dissipation board of the present invention has a diameter of 250 to 500. In the case of the package described in FIG. 4, the main cause of the inductance L is considered to be the gold wire 8. Also, since the resistance R is considered to be almost constant, if the capacitance C of the heat dissipation board is changed,
The resonance frequency is considered to be approximately proportional to 1/K. Therefore, when using the heat dissipation board of the present invention, the resonant frequency is A
It is considered that this is 175 to 1/7 lower than in the case of QN.
本発明によれば、半導体レーザの放熱基板に用いた場合
、熱伝導率が大きいので、熱抵抗の低下及び良好な放熱
効果がある。また、放熱基板の誘電率が可変、かつ、大
きく出来るので、パンケージの共振対策に効果がある。According to the present invention, when used as a heat dissipation substrate for a semiconductor laser, the thermal conductivity is high, so there is a reduction in thermal resistance and a good heat dissipation effect. Furthermore, since the dielectric constant of the heat dissipation substrate can be varied and increased, it is effective in countering resonance of the pan cage.
第１図は本発明の放熱基板の酸化アルミニウム含有量と
熱伝導率、比抵抗、及び誘電率の関係を示した特性図、
第２図は熱抵抗測定サンプルの説明図、第３図は各種放
熱基板を用いた場合の出力印加時間と熱抵抗の関係を示
した特性図、第４図は、本発明の放熱基板を半導体レー
ザのパッケージに組み込んだ場合の説明図、第５図は、
第４図に示した半導体レーザーパッケージの等価回路図
である。
１・・・半導体レーザ、２・・・放熱基板、３・・・銅
ステム、４・・・はんだ、５・・・半導体レーザ、６・
・高熱伝導第１図
１イしアルぐ二７ム含有！（皇量・／ａ）第２図
第３図
印力０＠間（ｙｎｊ）
第４図
第
図FIG. 1 is a characteristic diagram showing the relationship between aluminum oxide content, thermal conductivity, specific resistance, and dielectric constant of the heat dissipation substrate of the present invention;
Fig. 2 is an explanatory diagram of a thermal resistance measurement sample, Fig. 3 is a characteristic diagram showing the relationship between output application time and thermal resistance when various heat dissipation substrates are used, and Fig. 4 is a diagram showing the relationship between the heat dissipation substrate of the present invention and a semiconductor. Figure 5 is an explanatory diagram when it is assembled into a laser package.
5 is an equivalent circuit diagram of the semiconductor laser package shown in FIG. 4. FIG. DESCRIPTION OF SYMBOLS 1... Semiconductor laser, 2... Heat dissipation board, 3... Copper stem, 4... Solder, 5... Semiconductor laser, 6...
・Contains high thermal conductivity. (Imperial//a) Figure 2 Figure 3 Inryoku 0 @ between (ynj) Figure 4 Figure
Claims (1)
リリウムの少なくとも一種を含み、かつ、酸化アルミニ
ウムを含む電気絶縁性焼結体からなる基体表面に金属化
膜を有し、前記金属化膜上にろう材を介して半導体レー
ザ素子が接合されていることを特徴とする半導体装置。 ２、請求項１において、前記焼結体の酸化アルミニウム
の含有量が、炭化ケイ素１００重量部に対し、０．０５
〜０．１５重量部である半導体装置。 ３、請求項１または２において、前記焼結体の室温での
熱伝導率が２．０Ｗ／ｃｍ℃以上である半導体装置。 ４、請求項１または２において、前記焼結体の室温での
比抵抗が１０＾６Ωｃｍ以上である半導体装置。 ５、請求項１または２において、前記焼結体の誘電率が
、周波数１ＭＨｚで２５０以上である半導体装置。[Scope of Claims] 1. Having a metallized film on the surface of a base made of an electrically insulating sintered body containing silicon carbide as a main component, containing at least one of beryllium or beryllium oxide, and containing aluminum oxide, A semiconductor device characterized in that a semiconductor laser element is bonded onto a metallized film via a brazing material. 2. In claim 1, the content of aluminum oxide in the sintered body is 0.05 parts by weight based on 100 parts by weight of silicon carbide.
~0.15 parts by weight of a semiconductor device. 3. The semiconductor device according to claim 1 or 2, wherein the sintered body has a thermal conductivity of 2.0 W/cm°C or more at room temperature. 4. The semiconductor device according to claim 1 or 2, wherein the sintered body has a specific resistance of 10^6 Ωcm or more at room temperature. 5. The semiconductor device according to claim 1 or 2, wherein the dielectric constant of the sintered body is 250 or more at a frequency of 1 MHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17523190A JPH0464243A (en) | 1990-07-04 | 1990-07-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17523190A JPH0464243A (en) | 1990-07-04 | 1990-07-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0464243A true JPH0464243A (en) | 1992-02-28 |
Family
ID=15992563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17523190A Pending JPH0464243A (en) | 1990-07-04 | 1990-07-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0464243A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123738A (en) * | 2005-10-31 | 2007-05-17 | Sony Corp | Optical transmission module, optical transmission/reception module and optical communication apparatus |
| US7457333B2 (en) | 2003-03-14 | 2008-11-25 | Sumitomo Electric Industries, Ltd. | Light-transmitting module capable of responding a high-frequency over 10 GHz |
-
1990
- 1990-07-04 JP JP17523190A patent/JPH0464243A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7457333B2 (en) | 2003-03-14 | 2008-11-25 | Sumitomo Electric Industries, Ltd. | Light-transmitting module capable of responding a high-frequency over 10 GHz |
| JP2007123738A (en) * | 2005-10-31 | 2007-05-17 | Sony Corp | Optical transmission module, optical transmission/reception module and optical communication apparatus |
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