JPH0461952A - Rotary liquid coating device - Google Patents

Abstract

PURPOSE:To reduce the formation of improper patterns due to the scattering of a liq. by providing a gas inlet, a gas passage part formed of an exterior wall and an interior wall having a smooth surface not to block the gas flow, a liq. outlet to discharge the liq. through inside and below the interior wall and a support rotatable with a sample fixed to below the interior wall. CONSTITUTION:A semiconductor base plate 9 is fixed to a rotary support 10. The semiconductor base plate 9 is then coated with a liq. (e.g. developing solution) through a liq. discharge opening 8. After completion of this liq. coating, a gas flows from a gas inlet 12 through a gas flow passage part 13 defined between the inner surface of an exterior wall 6 and the outer surface of the interior wall 7. The support 10 is rotated to apply the liq. uniformly onto the semiconductor base plate 9. When the support is rotating, an excessive gas is carried out of the support 10 from the semiconductor 9 by a gaseous stream passing through the gas passage part 13. By this method, the scattering of the liq. can be reduced.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、試料に流体を回転塗布する液体塗布装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid coating device for spin-coating a fluid onto a sample.

従来の技術 以下に従来の技術について説明する。Conventional technology The conventional technology will be explained below.

第３図は、従来の液体回転塗布装置を示す斜視図である
。第３図において、１は容器、２は液体吐出口、３は試
料、ここでは半導体基板、４は半導体基板３を固定し回
転する台、５は塗布された液体である。FIG. 3 is a perspective view showing a conventional liquid spin coating device. In FIG. 3, 1 is a container, 2 is a liquid discharge port, 3 is a sample, here a semiconductor substrate, 4 is a table on which the semiconductor substrate 3 is fixed and rotated, and 5 is a liquid that has been applied.

以上のように構成された液体回転塗布装置について、以
下その動作について説明する。The operation of the liquid spin coating apparatus configured as described above will be described below.

まず、回転する台４上に、半導体基板３を固定する。次
に液体（例えば、現像液）が液体吐出口２より半導体基
板３上に塗布される。そして、台４を回転することによ
り、塗布された液体５を均一にする。First, the semiconductor substrate 3 is fixed on the rotating table 4. Next, a liquid (for example, a developer) is applied onto the semiconductor substrate 3 through the liquid discharge port 2 . Then, by rotating the table 4, the applied liquid 5 is made uniform.

発明が解決しようとする課題 しかしながら、上記従来の構成では、台４が回転する時
に液体が飛び散り、半導体基板３上に付着し、塗布され
た液体５が不均一となり、パターン不良を発生するとい
う欠点を有していた。Problems to be Solved by the Invention However, in the conventional configuration described above, the liquid scatters when the table 4 rotates and adheres to the semiconductor substrate 3, making the applied liquid 5 non-uniform and causing pattern defects. It had

本発明は上記従来の問題を解決するもので、液体の飛び
散りによるパターン不良を減少する液体回転塗布装置を
提供することを目的とする。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a liquid spin coating device that reduces pattern defects caused by liquid scattering.

課題を解決するための手段 この目的を達成するために本発明の液体回転塗布装置は
、気体の流入口と、前記気体の流れを妨げないなめらか
な面をもつ外壁及び内壁とで形成された気体流通部と、
前記内壁内を通り、前記内壁下に液体を通す液体吐出口
と、前記内壁下に試料を固定し、回転する台を備えた構
成をしている。Means for Solving the Problems In order to achieve this object, the liquid spin coating device of the present invention has a gas inflow port and an outer wall and an inner wall having smooth surfaces that do not impede the flow of the gas. Distribution department and
It is configured to include a liquid discharge port that passes the liquid through the inner wall and under the inner wall, and a rotating table on which a sample is fixed under the inner wall.

作用 この構成によって、気体の流れを妨げないなめらかな面
の外壁と内壁の間に、気体を流入口から送り込むと、試
料を乗せた台の外側を、気体が流れ、飛び散った液体は
、前記台の下方へと送られ、試料上への液体の飛び散り
を減少することができる。Effect: With this configuration, when gas is sent from the inlet between the outer wall and the inner wall, which have smooth surfaces that do not impede the flow of gas, the gas flows on the outside of the table on which the sample is placed, and the splashed liquid is absorbed by the table. This can reduce the amount of liquid splashing onto the sample.

実施例 以下本発明の一実施例について、図面を参照しながら説
明する。第１図は本発明の一実施例における液体回転塗
布装置の構造を示す断面図、第２図はその斜視図である
。第１図、第２図において、６は内面に気体の流れを妨
げない曲面を持つ外壁、７は外面に気体の流れを妨げな
い曲面を持つ内壁、８は液体吐出口、９は試料、ここで
は半導体基板、１０は半導体基板９を固定し、回転する
台、１１は塗布された液体、１２は気体の流入口である
１以上のように構成された、液体回転塗布装置について
、以下その動作を説明する。EXAMPLE An example of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing the structure of a liquid spin coating device according to an embodiment of the present invention, and FIG. 2 is a perspective view thereof. In Figures 1 and 2, 6 is an outer wall with a curved surface that does not impede gas flow on its inner surface, 7 is an inner wall that has a curved outer surface that does not impede gas flow, 8 is a liquid discharge port, and 9 is a sample. Hereinafter, the operation of the liquid spin coating apparatus will be described below, which is configured as follows: a semiconductor substrate, 10 is a rotating table on which a semiconductor substrate 9 is fixed, 11 is a applied liquid, and 12 is an inlet for gas. Explain.

まず、回転する台１０上に半導体基板９を固定する。次
に液体（例えば、現像液）が液体吐出口８より半導体基
板９上に塗布される。液体が液体吐出口８より塗られた
後、気体の流入口１２より、気体が外壁６の内面と内壁
７の外面との間に形成された気体流通部１３を流れる。First, the semiconductor substrate 9 is fixed on the rotating table 10. Next, a liquid (for example, a developer) is applied onto the semiconductor substrate 9 through the liquid discharge port 8 . After the liquid is applied from the liquid discharge port 8, the gas flows from the gas inlet 12 through the gas flow portion 13 formed between the inner surface of the outer wall 6 and the outer surface of the inner wall 7.

台１ｏが回転し、液体が半導体基板９上に均一に塗布さ
れる。台１０の回転時、余分な液体は、気体の気体流通
部１３を通る流れによって、半導体基板９上から台１０
の外に流される。The table 1o rotates and the liquid is uniformly applied onto the semiconductor substrate 9. When the table 10 rotates, excess liquid is removed from the top of the semiconductor substrate 9 onto the table 10 by the flow of gas through the gas flow section 13.
be swept outside.

発明の効果 以上のように本発明は、気体の流れを妨げないなめらか
な面をもつ外壁及び内壁とで形成された気体流通部と、
気体の流入口を設けることにより、液体の飛び散りを減
少することができる優れた液体回転塗布装置を実現でき
るものである。Effects of the Invention As described above, the present invention provides a gas flow section formed by an outer wall and an inner wall having smooth surfaces that do not impede the flow of gas;
By providing a gas inlet, it is possible to realize an excellent liquid spin coating device that can reduce liquid scattering.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例における液体回転塗布装置の
断面図、第２図は同斜視図、第３図は従来の液体回転塗
布装置の斜視図である。 １・・・・・・容器、２，８・・・・・・液体吐出口、
３，９・・・・・・半導体基板、４．１０・・・・・・
台、５，１１・・・・・・塗布された液体、６・・・・
・・外壁、７・・・・・・内壁、１２・・・・・・気体
の流入口。FIG. 1 is a sectional view of a liquid spin coating apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view thereof, and FIG. 3 is a perspective view of a conventional liquid spin coating apparatus. 1... Container, 2, 8... Liquid discharge port,
3,9... Semiconductor substrate, 4.10...
Base, 5, 11...Applied liquid, 6...
...Outer wall, 7...Inner wall, 12...Gas inlet.

Claims (1)

【特許請求の範囲】[Claims] 気体の流入口と、外壁の内面と内壁の外面で形成される
気体流通部と、前記内壁内を通り、前記内壁下に液体を
通す液体吐出口と、前記内壁下に試料を固定し、回転す
る台とを備えた液体回転塗布装置。A gas inflow port, a gas flow part formed by the inner surface of the outer wall and the outer surface of the inner wall, a liquid discharge port that passes the liquid through the inner wall and under the inner wall, and a sample is fixed under the inner wall and rotated. A liquid rotary coating device equipped with a stand.