JPH0460317B2 - - Google Patents

Info

Publication number: JPH0460317B2
Authority: JP; Japan
Prior art keywords: light; light absorption; layer; thin film; absorption layer
Prior art date: 1985-03-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP60061674A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61220292A (ja

Inventor

Hiroshi Kono

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hoya Corp

Original Assignee

Hoya Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-26

Filing date

1985-03-26

Publication date

1992-09-25

1985-03-26 Application filed by Hoya Corp filed Critical Hoya Corp

1985-03-26 Priority to JP60061674A priority Critical patent/JPS61220292A/ja

1986-09-30 Publication of JPS61220292A publication Critical patent/JPS61220292A/ja

1992-09-25 Publication of JPH0460317B2 publication Critical patent/JPH0460317B2/ja

Status Granted legal-status Critical Current

Links

230000031700 light absorption Effects 0.000 claims description 51
239000010409 thin film Substances 0.000 claims description 28
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 14
239000000758 substrate Substances 0.000 claims description 12
238000004544 sputter deposition Methods 0.000 claims description 10
229910052715 tantalum Inorganic materials 0.000 claims description 9
238000000034 method Methods 0.000 claims description 8
238000005546 reactive sputtering Methods 0.000 claims description 8
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
239000010408 film Substances 0.000 claims description 7
238000004519 manufacturing process Methods 0.000 claims description 5
QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
229910052760 oxygen Inorganic materials 0.000 claims description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
239000001301 oxygen Substances 0.000 claims 1
230000000694 effects Effects 0.000 description 9
239000007789 gas Substances 0.000 description 8
239000011521 glass Substances 0.000 description 5
238000010586 diagram Methods 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
230000015556 catabolic process Effects 0.000 description 3
239000002131 composite material Substances 0.000 description 3
238000005530 etching Methods 0.000 description 3
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
229910006404 SnO 2 Inorganic materials 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
230000005684 electric field Effects 0.000 description 2
229910003437 indium oxide Inorganic materials 0.000 description 2
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
239000000463 material Substances 0.000 description 2
238000005477 sputtering target Methods 0.000 description 2
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
229910001887 tin oxide Inorganic materials 0.000 description 2
238000001771 vacuum deposition Methods 0.000 description 2
238000007738 vacuum evaporation Methods 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910052772 Samarium Inorganic materials 0.000 description 1
-1 Si 3 N 4 Chemical class 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910052771 Terbium Inorganic materials 0.000 description 1
150000007513 acids Chemical class 0.000 description 1
239000011149 active material Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
239000005354 aluminosilicate glass Substances 0.000 description 1
230000003667 anti-reflective effect Effects 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
239000000428 dust Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000005283 ground state Effects 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
229910052748 manganese Inorganic materials 0.000 description 1
239000012528 membrane Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
229910001120 nichrome Inorganic materials 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
239000005361 soda-lime glass Substances 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

JP60061674A 1985-03-26 1985-03-26 薄膜ｅｌ素子とその製造方法 Granted JPS61220292A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60061674A JPS61220292A (ja)	1985-03-26	1985-03-26	薄膜ｅｌ素子とその製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60061674A JPS61220292A (ja)	1985-03-26	1985-03-26	薄膜ｅｌ素子とその製造方法

Publications (2)

Publication Number	Publication Date
JPS61220292A JPS61220292A (ja)	1986-09-30
JPH0460317B2 true JPH0460317B2 (fr)	1992-09-25

Family

ID=13178027

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60061674A Granted JPS61220292A (ja)	1985-03-26	1985-03-26	薄膜ｅｌ素子とその製造方法

Country Status (1)

Country	Link
JP (1)	JPS61220292A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2531686B2 (ja) *	1986-07-03	1996-09-04	株式会社小松製作所	カラ−表示装置
JP6899477B2 (ja) *	2019-07-26	2021-07-07	堺ディスプレイプロダクト株式会社	フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板
CN111217342B (zh) *	2020-03-11	2021-10-22	华北理工大学	一种多孔氮化铌粉体微波吸收材料的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59146193A (ja) *	1983-02-08	1984-08-21	日産自動車株式会社	表示装置

1985
- 1985-03-26 JP JP60061674A patent/JPS61220292A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59146193A (ja) *	1983-02-08	1984-08-21	日産自動車株式会社	表示装置

Also Published As

Publication number	Publication date
JPS61220292A (ja)	1986-09-30

Publication	Publication Date	Title
US4634639A (en)	1987-01-06	Electroluminescent panel having a light absorption layer of germanium oxide
JPH0460317B2 (fr)	1992-09-25
JPS5827506B2 (ja)	1983-06-09	黒化電極構造
JPH0460318B2 (fr)	1992-09-25
JPS6315718B2 (fr)	1988-04-06
JPH0152878B2 (fr)	1989-11-10
JPH0369158B2 (fr)	1991-10-31
JPH0325916B2 (fr)	1991-04-09
JPH027072B2 (fr)	1990-02-15
JPS5829880A (ja)	1983-02-22	電場発光素子
JPH0243190B2 (fr)	1990-09-27
JPH0326919B2 (fr)	1991-04-12
JPS63116393A (ja)	1988-05-20	薄膜電場発光素子
JPH0160917B2 (fr)	1989-12-26
JPS6215964Y2 (fr)	1987-04-22
JPS5835360B2 (ja)	1983-08-02	薄膜ｅｌパネル
JPS5820468B2 (ja)	1983-04-23	黒化電極構造
JPH08106983A (ja)	1996-04-23	薄膜電場発光素子
JPH0322394A (ja)	1991-01-30	薄膜ｅｌ素子
JPH0322395A (ja)	1991-01-30	薄膜ｅｌ素子
JPS6314833B2 (fr)	1988-04-01
JPH07106067A (ja)	1995-04-21	薄膜エレクトロルミネセンス素子およびその製造方法
JPH01204394A (ja)	1989-08-16	薄膜ｅｌ素子
JPS6252888A (ja)	1987-03-07	薄膜ｅｌ素子
JPS6143839B2 (fr)	1986-09-30