JPH0457020B2 - - Google Patents

Info

Publication number
JPH0457020B2
JPH0457020B2 JP60154548A JP15454885A JPH0457020B2 JP H0457020 B2 JPH0457020 B2 JP H0457020B2 JP 60154548 A JP60154548 A JP 60154548A JP 15454885 A JP15454885 A JP 15454885A JP H0457020 B2 JPH0457020 B2 JP H0457020B2
Authority
JP
Japan
Prior art keywords
carry
signal line
transistor
carry signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60154548A
Other languages
Japanese (ja)
Other versions
JPS62111325A (en
Inventor
Akira Yamada
Toyohiko Yoshida
Hiromasa Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60154548A priority Critical patent/JPS62111325A/en
Priority to US06/838,302 priority patent/US4807176A/en
Publication of JPS62111325A publication Critical patent/JPS62111325A/en
Publication of JPH0457020B2 publication Critical patent/JPH0457020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/50Adding; Subtracting
    • G06F7/501Half or full adders, i.e. basic adder cells for one denomination
    • G06F7/503Half or full adders, i.e. basic adder cells for one denomination using carry switching, i.e. the incoming carry being connected directly, or only via an inverter, to the carry output under control of a carry propagate signal
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2207/00Indexing scheme relating to methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F2207/38Indexing scheme relating to groups G06F7/38 - G06F7/575
    • G06F2207/3804Details
    • G06F2207/386Special constructional features
    • G06F2207/3872Precharge of output to prevent leakage

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Optimization (AREA)
  • General Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野〕 この発明は、算術論理演算ユニツト(以下
ALUと称す)で演算を行う際に生じるキヤリイ
の伝搬回路に関するものである。
[Detailed Description of the Invention] (Industrial Application Field) This invention relates to an arithmetic and logic operation unit (hereinafter referred to as
This relates to the carry propagation circuit that occurs when performing calculations in the ALU (ALU).

〔従来の技術〕[Conventional technology]

第3図は従来のマンチエスター型キヤリイ伝搬
回路の前ビツトのプリチヤージ部と、その次のビ
ツトのキヤリイ伝搬部を示す図であり、図におい
て、1は電源(5V),2はGND(0V),4は前段
のキヤリイ信号,5は次段へのキヤリイ伝搬信
号,6〜8はそれぞれキヤリイ伝搬用トランジス
タのソース,ゲート,ドレイン,9はキヤリイ信
号線,12はプリチヤージ用PMOS型トランジ
スタ,13はプリチヤージ用クロツク信号Φp,
17はインバーターゲート,18は排他的論理和
ゲート(論理回路)である。
Figure 3 is a diagram showing the precharge section for the previous bit and the carry propagation section for the next bit in a conventional Muntier star type carry propagation circuit. In the figure, 1 is the power supply (5V) and 2 is the GND (0V). , 4 is a carry signal in the previous stage, 5 is a carry propagation signal to the next stage, 6 to 8 are the sources, gates, and drains of carry propagation transistors, 9 is a carry signal line, 12 is a PMOS type transistor for precharge, and 13 is a carry propagation signal. Precharge clock signal Φp,
17 is an inverter gate, and 18 is an exclusive OR gate (logic circuit).

次にこの回路の動作について説明する。この回
路は、ALUの演算で、前段からのキヤリイ信号
をそのまま次段へ伝搬する働きをしている。これ
を詳しく説明すると、キヤリイを伝搬する前に、
まずキヤリイ信号線9はプリチヤージ用クロツク
信号13に同期してHレベル(5V)にプリチヤ
ージされており、ここで前ビツトの演算の結果そ
のビツトからキヤリイが発生すると、前段のキヤ
リイ信号4がHレベルになり、キヤリイ信号線9
はLレベルに設定される。このとき次段へのキヤ
リイ伝搬信号5がHレベルになると、キヤリイ信
号線9のキヤリイ信号が次段へ伝搬される。
Next, the operation of this circuit will be explained. This circuit works by propagating the carry signal from the previous stage to the next stage as is during ALU calculations. To explain this in detail, before propagating the carrier,
First, the carry signal line 9 is precharged to H level (5V) in synchronization with the precharge clock signal 13, and when a carry occurs from that bit as a result of the calculation of the previous bit, the carry signal 4 at the previous stage goes to the H level. Then, carry signal line 9
is set to L level. At this time, when the carry propagation signal 5 to the next stage becomes H level, the carry signal on the carry signal line 9 is propagated to the next stage.

また、各ビツトの演算はそれぞれのキヤリイ信
号線9の値が定まつた後に開始され、これはイン
バータゲート17を経て得られた次段へのキヤリ
イ伝搬信号5の反転信号とキヤリイ信号線9の値
との排他的論理和をとつて行なわれる。
Further, the calculation of each bit is started after the value of each carry signal line 9 is determined, and this is based on the inverted signal of the carry propagation signal 5 to the next stage obtained through the inverter gate 17 and the inverted signal of the carry signal line 9. This is done by exclusive ORing with the value.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来のマンチエスター型キヤリイ伝搬回路は以
上のように構成されているので、キヤリイ伝搬用
トランジスタのゲート7にHレベルの信号が加え
られ、これにより上位ビツトへキヤリイ信号線9
のレベルは伝搬される。ここで各ビツトのキヤリ
イ信号線9はプリチヤージ期間にHレベルになる
のでキヤリイ信号線9のHレベルを伝搬すること
はなく、キヤリイ信号線9がLレベルの場合に限
り、そのレベルがそのキヤリイ伝搬用トランジス
タを通して伝搬されている。この場合、キヤリイ
信号線9はプリチヤージ期間にHレベル(5V)
になつており、この状態で前段のキヤリイ信号4
がHレベルになると、キヤリイ信号線9はデイス
チヤージし始める。このときキヤリイ伝搬信号5
がHレベルになつてもキヤリイ信号線9の電圧が
キヤリイ信号伝搬用トランジスタのゲート7電圧
に対して該トランジスタの閾値電圧Vth以上低く
なるまでこの伝搬用トランジスタはオンしない。
このため、キヤリイ伝搬信号5がアクテイブにな
つてからキヤリイ伝搬用トランジスタがオンする
までの時間がむだになり、キヤリイ伝搬信号5が
全ビツト同時に設定されてもキヤリイ信号線9の
レベルが最終的なキヤリイ伝搬出力となるまでに
はかなりの時間が必要となり、その結果演算速度
が遅くなるという問題点があつた。
Since the conventional Muntier star type carry propagation circuit is configured as described above, an H level signal is applied to the gate 7 of the carry propagation transistor, thereby transmitting the carry signal line 9 to the upper bit.
The level of is propagated. Here, since the carry signal line 9 of each bit becomes H level during the precharge period, the H level of the carry signal line 9 is not propagated, and only when the carry signal line 9 is L level, that level is transmitted to the carry signal line 9. is propagated through the transistor. In this case, the carry signal line 9 is at H level (5V) during the precharge period.
In this state, the carry signal 4 of the previous stage is
When the signal becomes H level, the carry signal line 9 starts to discharge. At this time, the carry propagation signal 5
Even if becomes H level, this propagation transistor is not turned on until the voltage of the carry signal line 9 becomes lower than the gate 7 voltage of the carry signal propagation transistor by more than the threshold voltage Vth of the transistor.
For this reason, the time from when the carry propagation signal 5 becomes active until the carry propagation transistor turns on is wasted, and even if all bits of the carry propagation signal 5 are set at the same time, the level of the carry signal line 9 may not reach the final level. A considerable amount of time is required to reach the carry propagation output, resulting in a problem that the calculation speed becomes slow.

この発明では、上記のような問題点を解決する
ためになされたもので、キヤリイ信号線のキヤリ
イ信号を高速に伝搬できるマンチエスター型キヤ
リイ伝搬回路を得ることを目的とする。
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a Muntier star type carry propagation circuit that can propagate a carry signal on a carry signal line at high speed.

〔問題点を解決するための手段〕[Means for solving problems]

この発明にかかるマンチエスタ型キヤリイ伝搬
回路は、キヤリイ信号線をプリチヤージする回路
を、上記キヤリイ信号線のプリチヤージ電圧が電
源電圧の1/2程度の中間レベルとなるよう構成し
たものである。
The Muntier star type carry propagation circuit according to the present invention has a circuit for precharging the carry signal line so that the precharge voltage of the carry signal line is at an intermediate level of about 1/2 of the power supply voltage.

〔作用〕[Effect]

この発明においては、上記キヤリイ信号線のプ
リチヤージ電圧が電源電圧の1/2程度の中間レベ
ルとなるようにしたから、キヤリイ伝搬の際に
は、キヤリイ伝搬用トランジスタのゲート印加電
圧とソース電圧,つまりキヤリイ信号線のプリチ
ヤージ電位との電位差には該トランジスタのしき
い値電圧分より十分大きな開きが確保されること
となり、このため上記キヤリイ伝搬信号がアクテ
イブになると、キヤリイ伝搬用MOSトランジス
タはそのしきい値のばらつきに関係なく、直ちに
導通することとなり、常にキヤリイ信号を高速で
伝搬することができ、演算速度の高速化を確実に
図ることができる。
In this invention, since the precharge voltage of the carry signal line is set to an intermediate level of about 1/2 of the power supply voltage, during carry propagation, the gate applied voltage and source voltage of the carry propagation transistor, that is, The potential difference between the precharge potential of the carry signal line and the precharge potential is ensured to be sufficiently larger than the threshold voltage of the transistor. Therefore, when the carry propagation signal becomes active, the carry propagation MOS transistor reaches its threshold. Regardless of the variation in values, conduction occurs immediately, and the carry signal can be propagated at high speed at all times, making it possible to reliably increase the calculation speed.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例によるマンチエスタ
ー型キヤリイ伝搬回路を示し、図において、1は
電源(5V),2はGND(0V),3はプリチヤージ
用クロツク信号(Φp),4〜9は上記従来装置と
全く同一のものであり、10はキヤリイ信号線9
のプリチヤージ用のNMOS型トランジスタであ
り、該トランジスタ10は約1.5Vの程度の高閾
値電圧Vthを持つ。
FIG. 1 shows a Muntier star type carry propagation circuit according to an embodiment of the present invention. In the figure, 1 is a power supply (5V), 2 is a GND (0V), 3 is a precharge clock signal (Φp), and 4 to 9 is exactly the same as the conventional device described above, and 10 is a carry signal line 9.
The transistor 10 is an NMOS type transistor for precharging, and the transistor 10 has a high threshold voltage Vth of about 1.5V.

15はキヤリイ信号線9の値の反転信号、16
はキヤリイ信号線9の電圧レベル設定用NMOS
型トランジスタ、17aはキヤリイ信号線9の値
を反転するインバーターゲート、17bはキヤリ
イ伝搬信号を反転するインバーターゲート、18
は排他的論理和ゲートである。また、14a,1
4bはそれぞれのゲートにプリチヤージ用クロツ
ク信号3、インバーターゲート17の出力を接続
されキヤリイ信号線9のレベルを中間レベルから
HレベルにプルアツプするPMOS型トランジス
タであり、これらはプルアツプ回路を構成してい
る。
15 is an inverted signal of the value of the carry signal line 9; 16
is NMOS for setting the voltage level of carry signal line 9.
17a is an inverter gate that inverts the value of the carry signal line 9; 17b is an inverter gate that inverts the carry propagation signal; 18
is an exclusive OR gate. Also, 14a, 1
Reference numeral 4b denotes a PMOS transistor whose gate is connected to the precharge clock signal 3 and the output of the inverter gate 17, and which pulls up the level of the carry signal line 9 from the intermediate level to the H level, and these constitute a pull-up circuit. .

次に動作について説明する。 Next, the operation will be explained.

まず閾値電圧Vthが約1.5Vのトランジスタ10
を用いてキヤリイ信号線9をプリチヤージする
と、該信号線は約3.5V程度の中間レベルの電位
に保たれる。この時前段のキヤリイ信号線4がH
レベルになり、キヤリイ信号線9のLレベル信号
を次段へ伝搬すべくキヤリイ伝搬信号5がHレベ
ルになると、キヤリイ伝搬用トランジスタのソー
ス6とゲート7間の電位差は、このトランジスタ
のVthより高いためキヤリイ伝搬用トランジスタ
は直ちにオン状態となる。また、該キヤリイ伝搬
信号5は、全ビツト同時に設定されるため、キヤ
リイを伝える必要のあるビツトのキヤリイ伝搬用
トランジスタは同時にオン状態になり、キヤリイ
信号線9のLレベルの信号が高速に伝搬されるこ
とになる。
First, a transistor 10 with a threshold voltage Vth of about 1.5V
When the carry signal line 9 is precharged using the voltage, the signal line is maintained at an intermediate level potential of about 3.5V. At this time, the carry signal line 4 in the previous stage is H.
When the carry propagation signal 5 becomes H level in order to propagate the L level signal on the carry signal line 9 to the next stage, the potential difference between the source 6 and gate 7 of the carry propagation transistor is higher than the Vth of this transistor. Therefore, the carry propagation transistor immediately turns on. Furthermore, since the carry propagation signal 5 is set at the same time for all bits, the carry propagation transistors of the bits that need to transmit the carry are turned on at the same time, and the L level signal on the carry signal line 9 is propagated at high speed. That will happen.

また、各ビツトの演算は上記の方法で伝搬され
たキヤリイ信号線9の値とキヤリイ信号5の反転
信号の排他的論理和18を取ることにより行なわ
れる。ここでキヤリイ信号線9の値がLレベルの
場合はそのままその信号を排他的論理和ゲート1
8への出力信号として使用できるが、キヤリイ信
号線9の値が中間レベルの場合にはその中間レベ
ルの電位をプリチヤージ用クロツク3がLレベル
の時に電源電圧まで引き上げ、これを排他的論理
和ゲートに出力する。そのため第1図に示すよう
にプルアツプ用のロジツク回路が設けられてい
る。このプルアツプ用のロジツク回路はキヤリイ
信号線9と電源1との間に直列に接続された2個
のPMOS型トランジスタからなり、これらのト
ランジスタの各ゲートには、それぞれプリチヤー
ジ用クロツク信号3、キヤリイ信号線9の値の反
転信号15が接続されている。また、これらのト
ランジスタ14a,14bはPMOS型トランジ
スタであるため、プリチヤージ用トランジスタ1
0のクロツク信号13がLレベルで、かつキヤリ
イ信号線9が中間レベルのときにキヤリイ信号線
9の電位は電源電圧まで引き上げられる。上記の
ような回路を用いることにより、キヤリイ信号線
9の値がLレベルの場合はそのままLレベルの信
号を排他的論理和ゲート18に出力し、キヤリイ
信号線9が中間レベルの場合には上記プルアツプ
用ロジツク回路によりキヤリイ信号線9をHレベ
ルまでプルアツプし上記ゲート18に出力する。
この時キヤリイ信号線9は5Vの電源電圧まで引
き上げられているが、次のプリチヤージ期間で該
キヤリイ信号線9はプリチヤージ用高閾値電圧
VthのNMOS型トランジスタ10とNMOS型ト
ランジスタ16により中間レベル(約3.5V)に
設定される。また上記NMOS型トランジスタ1
6は、トランジスタ10とのオン抵抗の比により
キヤリイ信号線9の電位が所望の中間レベルの値
になるようにパラメータが設定されたものであ
る。そして各ビツトの演算は上記のようにして各
ビツトのキヤリイ信号線9の値が定まつた後に始
められ、従来の回路と同様にキヤリイ信号線9の
値と次段へのキヤリイ伝搬信号5の反転信号との
排他的論理和18がとられ、これにより演算が進
められる。
Further, each bit is calculated by taking the exclusive OR 18 of the value of the carry signal line 9 propagated in the above method and the inverted signal of the carry signal 5. Here, if the value of the carry signal line 9 is at L level, that signal is directly passed to the exclusive OR gate 1.
However, when the value of the carry signal line 9 is at an intermediate level, the intermediate level potential is pulled up to the power supply voltage when the precharge clock 3 is at the L level, and this is applied to the exclusive OR gate. Output to. Therefore, a pull-up logic circuit is provided as shown in FIG. This pull-up logic circuit consists of two PMOS transistors connected in series between the carry signal line 9 and the power supply 1, and the gates of these transistors receive a precharge clock signal 3 and a carry signal, respectively. An inverted signal 15 of the value of line 9 is connected. Furthermore, since these transistors 14a and 14b are PMOS transistors, the precharge transistor 1
When the zero clock signal 13 is at L level and the carry signal line 9 is at an intermediate level, the potential of the carry signal line 9 is raised to the power supply voltage. By using the above circuit, when the value of the carry signal line 9 is at L level, the L level signal is directly output to the exclusive OR gate 18, and when the value of the carry signal line 9 is at the intermediate level, the above The pull-up logic circuit pulls up the carry signal line 9 to H level and outputs it to the gate 18.
At this time, the carry signal line 9 is pulled up to the power supply voltage of 5V, but in the next precharge period, the carry signal line 9 is pulled up to the precharge high threshold voltage.
It is set to an intermediate level (approximately 3.5V) by the Vth NMOS transistor 10 and NMOS transistor 16. In addition, the above NMOS type transistor 1
6, parameters are set so that the potential of the carry signal line 9 becomes a desired intermediate level value depending on the on-resistance ratio with the transistor 10. The calculation of each bit is started after the value of the carry signal line 9 of each bit is determined as described above, and as in the conventional circuit, the value of the carry signal line 9 and the carry propagation signal 5 to the next stage are calculated. Exclusive OR 18 with the inverted signal is taken, and the calculation proceeds accordingly.

このように本実施例では、キヤリイ信号線9の
プリチヤージ電位を3.5V程度としたので、プリ
チヤージ状態では、キヤリイ伝搬用トランジスタ
7のゲート印加電圧(5V)とソース電位,つま
りプリチヤージ電位(3.5V)との電位差には該
トランジスタ7のしきい値電圧分(0.7V)より
十分大きな開き(1.5V)が確保されることとな
り、このためキヤリイ伝搬信号5がアクテイブに
なると、上記キヤリイ伝搬用トランジスタ7は、
そのしきい値のばらつきに関係なく、直ちにオン
することとなる。この結果複数段直列に接続され
たキヤリイ伝搬用トランジスタの動作時間の合計
は直列段数とは無関係に小さな値となり、演算速
度の高速化を確実に図ることができる。
In this embodiment, the precharge potential of the carry signal line 9 is set to about 3.5V, so in the precharge state, the gate applied voltage (5V) and the source potential of the carry propagation transistor 7, that is, the precharge potential (3.5V). A sufficiently larger difference (1.5V) than the threshold voltage (0.7V) of the transistor 7 is secured in the potential difference between the transistor 7 and the carry propagation transistor 7. Therefore, when the carry propagation signal 5 becomes active, the carry propagation transistor 7 teeth,
Regardless of the variation in the threshold value, it will turn on immediately. As a result, the total operating time of the carry propagation transistors connected in series in multiple stages becomes a small value regardless of the number of stages in series, and the calculation speed can be reliably increased.

なお、上記の実施例では、高閾値電圧Vthのト
ランジスタ10を用いてキヤリイ信号線をプリチ
ヤージすることにより、キヤリイ信号線を3.5V
程度の中間レベル設定するものを示したが、これ
は第2図に示すように0.7V程度のしきい値電圧
Vthを持つ通常のトランジスタ11を2個直列に
接続しキヤリイ信号線を中間レベルの電位に設定
してもよく、上記実施例と同様な効果が得られ
る。
In the above embodiment, the carry signal line is set to 3.5V by precharging the carry signal line using the transistor 10 having a high threshold voltage Vth.
As shown in Figure 2, this setting has a threshold voltage of about 0.7V.
Two normal transistors 11 having Vth may be connected in series and the carry signal line may be set to an intermediate level potential, and the same effect as in the above embodiment can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明にかかるマンチエスタ型キ
ヤリイ伝搬回路によれば、キヤリイ信号線のプリ
チヤージ電圧が電源電圧の1/2程度の中間レベル
となるようにしたので、キヤリイ伝搬の際には、
キヤリイ伝搬用トランジスタのゲート印加電圧と
ソース電圧、つまりキヤリイ信号線のプリチヤー
ジ電圧との電位差には該トランジスタのしきい値
電圧分より十分大きな開きが確保されることとな
り、このため上記キヤリイ伝搬信号がアクテイブ
になると、キヤリイ伝搬用MOSトランジスタは
そのしきい値のばらつきに関係なく、直ちに導通
することとなり、常にキヤリイ信号を高速で伝搬
することができ、演算速度の高速化を確実に大き
く進めることができるという効果がある。
As described above, according to the Muntier star type carry propagation circuit according to the present invention, the precharge voltage of the carry signal line is set to an intermediate level of about 1/2 of the power supply voltage, so that during carry propagation,
The potential difference between the gate applied voltage of the carry propagation transistor and the source voltage, that is, the precharge voltage of the carry signal line, is sufficiently larger than the threshold voltage of the transistor, so that the carry propagation signal is When activated, the carry propagation MOS transistor immediately becomes conductive regardless of variations in its threshold value, allowing the carry signal to be propagated at high speed at all times, thereby ensuring a significant increase in calculation speed. There is an effect that it can be done.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例によるマンチエス
ター型キヤリイ伝搬回路を示す回路図、第2図は
この発明の他の実施例を示す回路図、第3図は従
来のマンチエスター型キヤリイ伝搬回路を示す回
路図である。 図において、3はプリチヤージ用クロツク信
号、4はその前のビツトで発生したキヤリイ信
号、5は次段へのキヤリイ伝搬信号、10はプリ
チヤージ用高Vthトランジスタ、11はプリチヤ
ージ用トランジスタ、14はプルアツプ用
PMOS型トランジスタ、16はキヤリイ信号線
電圧レベル設定用NMOS型トランジスタ、17
はインバータゲート、18は排他的論理和ゲート
である。なお図中同一符号は同一又は相当部分を
示す。
Fig. 1 is a circuit diagram showing a Muntier star type carry propagation circuit according to one embodiment of the present invention, Fig. 2 is a circuit diagram showing another embodiment of the invention, and Fig. 3 is a circuit diagram showing a conventional Muntier star type carry propagation circuit. FIG. In the figure, 3 is a precharge clock signal, 4 is a carry signal generated in the previous bit, 5 is a carry propagation signal to the next stage, 10 is a high Vth transistor for precharge, 11 is a precharge transistor, and 14 is for pull-up.
PMOS type transistor, 16 is NMOS type transistor for setting carry signal line voltage level, 17
is an inverter gate, and 18 is an exclusive OR gate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】 1 キヤリイ信号線に直列に接続され、キヤリイ
信号線の電圧レベルをキヤリイとして下位ビツト
から上位ビツトへ伝搬するMOSトランジスタと、
上記キヤリイ信号線をプリチヤージする回路と、
下位ビツトでのキヤリイ発生に応じて上記キヤリ
イ信号線をデイスチヤージする回路とを備えたマ
ンチエスタ型キヤリイ伝搬回路において、 上記プリチヤージ回路を、上記キヤリイ信号線
のプリチヤージ電圧が電源電圧の1/2程度の中間
レベルとなるよう構成したことを特徴とするマン
チエスタ型キヤリイ伝搬回路。 2 上記プリチヤージ回路は、電源とキヤリイ信
号線との間に設けられプリチヤージ用クロツクを
制御信号とする高しきい値トランジスタまたは直
列接続の2つのトランジスタと、上記キヤリイ信
号線と接地との間に設けられ上記プリチヤージ用
クロツク信号を制御信号とするトランジスタと、
キヤリイ伝搬時における中間レベルのキヤリイ信
号線の値を電源電位レベルにプルアツプして論理
回路に与えるプルアツプ回路とから構成されてい
ることを特徴とする特許請求の範囲第1項記載の
マンチエスタ型キヤリイ伝搬回路。 3 上記キヤリイ信号線と接地との間のトランジ
スタは、上記キヤリイ信号線をプルダウンする第
1のMOSトランジスタであり、 上記高しきい値トランジスタは、上記キヤリイ
信号線をプリチヤージする、上記第1のMOSト
ランジスタよりしきい値を大きく設定した第2の
MOSトランジスタから構成されていることを特
徴とする特許請求の範囲第2項記載のマンチエス
タ型キヤリイ伝搬回路。
[Scope of Claims] 1. A MOS transistor connected in series to a carry signal line and propagating from a lower bit to an upper bit using the voltage level of the carry signal line as a carry;
A circuit that precharges the carry signal line,
In a munchiesta type carry propagation circuit comprising a circuit for discharging the carry signal line in response to the occurrence of a carry in the lower bit, the precharge circuit is configured such that the precharge voltage of the carry signal line is approximately 1/2 of the power supply voltage. A mantier type carry propagation circuit characterized in that it is configured to have a level. 2. The precharge circuit includes a high threshold transistor or two transistors connected in series, which is provided between the power supply and the carry signal line and uses the precharge clock as a control signal, and the carry signal line and the ground. a transistor whose control signal is the precharge clock signal;
The Manchester type carry propagation according to claim 1, further comprising a pull-up circuit that pulls up the value of the carry signal line at an intermediate level during carry propagation to a power supply potential level and supplies it to a logic circuit. circuit. 3 The transistor between the carry signal line and the ground is the first MOS transistor that pulls down the carry signal line, and the high threshold transistor is the first MOS transistor that precharges the carry signal line. The second transistor has a higher threshold than the transistor.
3. The Muntier star type carry propagation circuit according to claim 2, characterized in that it is composed of MOS transistors.
JP60154548A 1985-07-12 1985-07-12 Manchester type carry transmitting circuit Granted JPS62111325A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60154548A JPS62111325A (en) 1985-07-12 1985-07-12 Manchester type carry transmitting circuit
US06/838,302 US4807176A (en) 1985-07-12 1986-03-10 Manchester type carry propagation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60154548A JPS62111325A (en) 1985-07-12 1985-07-12 Manchester type carry transmitting circuit

Publications (2)

Publication Number Publication Date
JPS62111325A JPS62111325A (en) 1987-05-22
JPH0457020B2 true JPH0457020B2 (en) 1992-09-10

Family

ID=15586658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60154548A Granted JPS62111325A (en) 1985-07-12 1985-07-12 Manchester type carry transmitting circuit

Country Status (2)

Country Link
US (1) US4807176A (en)
JP (1) JPS62111325A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211966A (en) * 1987-11-02 1989-07-12 Philips Nv Digital integrated circuit
JP2885402B2 (en) * 1988-06-15 1999-04-26 富士通株式会社 Carry propagation circuit of parallel type full adder
US4899305A (en) * 1988-06-15 1990-02-06 National Semiconductor Corp. Manchester carry adder circuit
US4885716A (en) * 1988-08-15 1989-12-05 Dallas Semiconductor Corporation High speed carry chain
US5163019A (en) * 1990-11-29 1992-11-10 Brooktree Corporation Binary carry circuitry
JP2530070B2 (en) * 1991-09-11 1996-09-04 株式会社東芝 Adder
JP3110221B2 (en) * 1993-10-04 2000-11-20 株式会社東芝 Full adder circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168041A (en) * 1985-01-22 1986-07-29 Nec Corp Arithmetic logic circuit

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US3919536A (en) * 1973-09-13 1975-11-11 Texas Instruments Inc Precharged digital adder and carry circuit
US4179746A (en) * 1976-07-19 1979-12-18 Texas Instruments Incorporated Digital processor system with conditional carry and status function in arithmetic unit
US4357675A (en) * 1980-08-04 1982-11-02 Bell Telephone Laboratories, Incorporated Ripple-carry generating circuit with carry regeneration
US4408136A (en) * 1981-12-07 1983-10-04 Mostek Corporation MOS Bootstrapped buffer for voltage level conversion with fast output rise time
US4538239A (en) * 1982-02-11 1985-08-27 Texas Instruments Incorporated High-speed multiplier for microcomputer used in digital signal processing system
US4523292A (en) * 1982-09-30 1985-06-11 Rca Corporation Complementary FET ripple carry binary adder circuit
US4584660A (en) * 1983-06-22 1986-04-22 Harris Corporation Reduction of series propagation delay and impedance
US4677584A (en) * 1983-11-30 1987-06-30 Texas Instruments Incorporated Data processing system with an arithmetic logic unit having improved carry look ahead
JPS60134932A (en) * 1983-12-24 1985-07-18 Toshiba Corp Carry chaining addition circuit of precharge type
US4661930A (en) * 1984-08-02 1987-04-28 Texas Instruments Incorporated High speed testing of integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168041A (en) * 1985-01-22 1986-07-29 Nec Corp Arithmetic logic circuit

Also Published As

Publication number Publication date
JPS62111325A (en) 1987-05-22
US4807176A (en) 1989-02-21

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