JPH0445261A - Method for degassing vacuum member, vacuum member and electron beam generating device - Google Patents
Method for degassing vacuum member, vacuum member and electron beam generating deviceInfo
- Publication number
- JPH0445261A JPH0445261A JP15098790A JP15098790A JPH0445261A JP H0445261 A JPH0445261 A JP H0445261A JP 15098790 A JP15098790 A JP 15098790A JP 15098790 A JP15098790 A JP 15098790A JP H0445261 A JPH0445261 A JP H0445261A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- vacuum member
- degassing
- high temperature
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 22
- 238000007872 degassing Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 4
- 238000007751 thermal spraying Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は 真空容器中で使用する真空部材の脱ガス方法
真空部材およびその真空部材を使用した電子ビーム発
生装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for degassing a vacuum member used in a vacuum container and to an electron beam generator using the vacuum member.
従来の技術
従来より、金入 非金属の基板上に物理蒸着法（ＰＶＤ
）あるいは化学蒸着法（ＣＶＤ）等によってさまざまな
機能を有する膜を形成し それらを電子デバイスの一要
素部品として使用しているものが多くみられる。特番へ
大画面ディスプレイにおいて法 製膜スビーＫ 製膜
された膜の特性から溶射製膜法によって大面積基板にセ
ラミックス等の絶縁皮膜を形成した絶縁基板を使用する
ことが多ｔも
以下に従来の真空部材の脱ガス方法を説明すも第７図は
溶射製膜法によって製膜された膜の断面図であム 図に
おいて、７０は真空部材、 ７１は基板 ７２は気孔
７３は溶射膜であも 溶射膜７３においては膜の表面上
だけではなく、偏平化された溶射粒子の隙間にはＩ（ａ
ｏ、ＣＯ２，Ｃｏ等のガスが大量に吸着されていも こ
のような真空部材７０を平板型デイスプレィなどに使用
した場合 デイスプレィを構成する真空容器内でのガス
の発生による汚染が問題となム この問題を解決するた
め＋Ｑ 従来から真空部材を予め真空中で脱ガスした
後、デイスプレィなどの真空容器中に組み込む方法がと
られていも
第８図は従来の脱ガス方法に使用される脱ガス装置の部
分切り欠き斜視図であム このような脱ガス装置を使用
した脱ガス方法を以下に説明すム真空部材８０は基板８
１とその基板８１上に形成された溶射膜８２から構成さ
れていも この真空部材８０を真空チャンバ８３内に設
置し 真空ポンプ８４で真空チャンバ８３内を排気し
加熱ヒータ８５で真空チャンバ８３全体を加熱すも真空
部材８０から放出されたガスの量は真空計８６で測定さ
れ 真空部材８０の表面温度は放射温度計８７で測定さ
れも
発明が解決しようとする課題
しかしながら上記従来の構成でζよ 真空部材に対する
加熱が主に対ぬ 放射によるものであり、また真空部材
使用時に高温となる領域以外をも高温とするため非効率
であるととも番ミ 真空部材全体が高温に曝されるこ
とから特に溶剤膜と基板との熱膨張率が異なる場合には
熱による歪が発生するという課題を有してい九
また平板型デイスプレィでは線条ヒータが通常７００℃
に加熱され また第９図に示す溶射膜の脱ガス性能特性
図に示すように溶射膜（９１で示す脱ガス特性）が金属
基板（９２で示す脱ガス特性）と同等の脱ガス性能を確
保するためには６５０℃−４時間の真空加熱処理が必要
であるが、従来の脱ガス方法では４５０℃以上に真空部
材を加熱することができないという課題を有してい九本
発明は上記従来の課題を解決するもので、真空中で高温
使用される真空部材から効率的に脱ガスを行う真空部材
の脱ガス方法を提供することを目的とすム
課題を解決するための手段
この目的を達成するために本発明の真空部材の脱ガス方
法１１ その真空部材が使用中に高温になる領域のみ
を予め真空中で選択的に加熱し その部分から吸着ガス
を脱離させるものであム作用
この構成によって、脱ガスを効率的に行うことができる
ととも（脱ガス処理中に真空部材が破損したり、歪んだ
りすることがなく、さらに平板デイスプレィなどのヒー
タ支持部材に使用して高性能を維持できる真空部材の脱
ガス処理ができも実施例
以下本発明の一実施例について、図面を参照しながら説
明すも
第１図は本発明の一実施例における脱ガス方法を示す構
成図であム この図において、 ■は真空部抹 ２は真
空部材］を構成する金属薄板材であり、片面に溶射法に
よりセラミックス絶縁皮膜３が形成されている。４は所
定パターンを有する孔＠５は孔部４の上部に当接したヒ
ータであり、電源６により通電加熱されム ７はヒータ
５を絶縁皮Ｍ３に所定の圧力で押し付けるための加圧治
具であａ
第２図は本発明の脱ガス方法に使用する脱ガス装置の部
分切り欠き斜視図であも 図において、８は真空部材１
からの放出ガスを調べるのに用いる真空計、 ９は真空
チャンｔ＜ ＩＯは加熱脱ガス時に真空部材１の表面
温度分布を調べる放射温度計、 １１は真空ポンプであ
ム また真空チャンバ９は全体を加熱できるようにその
外壁に外部ヒータ１２が取り付けられていも このよう
に真空部材１を設置した真空チャンバ９内を真空ポンプ
１１で排気し ある程度の真空度に達した収 ヒータ５
に通電して選択的に真空部材ｌを加熱すも真空部材１は
その加熱された領域のみが高温となり、吸着ガスを放出
すム 第３図にヒータ５を使用して真空部材１を加熱
したときの真空部材１内の温度分布を示も 図において
、 １３は等混線であム このように部分的に高温に加
熱されることか収 熱膨張率の異なる複数種の材料層か
らなる真空部材でも加熱による歪を緩和できも また真
空部材１を電子ビーム発生装置の線条カソード支持部材
として使用すると、より安定した電子ビームをを得るこ
とできも
第４図は本発明における他の実施例における真空部材の
脱ガス方法を示す構成図であａ 図において、 １４は
セラミックス絶縁皮膜３を加熱するためのレーザ光源で
あって、第１図に示す実施例におけるヒータ５をレーザ
光源１４による加熱に置き換えたものであり、第２図の
脱ガス処理装置内に配置して脱ガス処理を行うものであ
ム このレーザ光源１４を使用することにより、脱ガス
処理のみではなく、セラミックス絶縁皮膜３の一部を溶
融して膜質を向上させることができも第５図は本発明に
おける脱ガス方法により脱ガス処理した真空部材を用い
た電子ビーム発生装置の要部斜視図であも ガラスなど
の背面基板１５の表面には導電性膜によりストライプ状
の制御電極１６が形成されていも 画面の乱れ ちらつ
き等の原因となる線条カソード１７の振動を防止するた
めに設置されるカソード支持部材 １８には電子ビーム
を通過させる孔部１９が制御電極１６に対応して設けら
れていも 線条カソード１７はカソード支持部材１８上
に孔部１９を横断して当接し架張されていも このカソ
ード支持部材１８は厚み０． ２ｍｍ程度の金属基板２
０の上にアルミナ等のセラミックス絶縁皮膜２１を数十
〜数百μｍ程度溶射製膜法により設けた真空部材を加工
したものであム ２２はカソード支持部材１８を支える
ための絶縁板、 ２３は予め高温で脱ガス処理された領
域である。Conventional technology Traditionally, physical vapor deposition (PVD) was used to deposit gold onto a non-metallic substrate.
) or chemical vapor deposition (CVD) to form films with various functions, and these are often used as elemental parts of electronic devices. To the special program For large-screen displays, it is common to use insulating substrates in which an insulating film such as ceramics is formed on a large-area substrate by thermal spraying due to the characteristics of the film formed. To explain the method of degassing the vacuum member, Fig. 7 is a cross-sectional view of a film formed by the thermal spray film forming method. In the figure, 70 is the vacuum member, 71 is the substrate, and 72 is the pores.
73 is a thermal sprayed film. In the thermal sprayed film 73, I(a) is present not only on the surface of the film but also in the gaps between the flattened spray particles
Even if a large amount of gases such as O2, CO2, and Co are adsorbed, when such a vacuum member 70 is used in a flat display, etc., contamination due to gas generation within the vacuum container that makes up the display becomes a problem. To solve the problem +Q Conventionally, vacuum members have been degassed in a vacuum before being incorporated into a vacuum container such as a display, but Figure 8 shows a degassing device used in the conventional degassing method. A degassing method using such a degassing device will be explained below.The vacuum member 80 is a substrate 8.
1 and a sprayed film 82 formed on its substrate 81. This vacuum member 80 is installed in a vacuum chamber 83, and the inside of the vacuum chamber 83 is evacuated by a vacuum pump 84.
Although the entire vacuum chamber 83 is heated by the heater 85, the amount of gas released from the vacuum member 80 is measured by the vacuum gauge 86, and the surface temperature of the vacuum member 80 is measured by the radiation thermometer 87. Problems However, with the above conventional configuration, the heating of the vacuum member is mainly due to radiation, and it is inefficient because it heats areas other than those that are high temperature when the vacuum member is used. Since the entire device is exposed to high temperatures, there is a problem that distortion occurs due to heat, especially when the coefficients of thermal expansion of the solvent film and the substrate are different.
In addition, as shown in the degassing performance characteristics diagram of the sprayed film shown in Figure 9, the sprayed film (degassing properties shown by 91) ensures the same degassing performance as the metal substrate (degassing properties shown by 92). In order to achieve this, a vacuum heat treatment at 650°C for 4 hours is required, but conventional degassing methods have the problem that vacuum members cannot be heated above 450°C. The purpose is to provide a method for degassing vacuum members that efficiently degasses vacuum members that are used at high temperatures in a vacuum.Means for solving the problem Achieving this purpose In order to degas the vacuum member according to the present invention 11, only the area of the vacuum member that becomes high temperature during use is selectively heated in vacuum in advance, and the adsorbed gas is desorbed from that area. This configuration allows for efficient degassing (the vacuum member will not be damaged or distorted during the degassing process, and can also be used in heater support members for flat panel displays, etc.) to achieve high performance. EXAMPLE An embodiment of the present invention will be described below with reference to the drawings. Fig. 1 is a block diagram showing a degassing method in an embodiment of the present invention. In this figure, ① is a vacuum part, 2 is a thin metal plate that constitutes a vacuum member, and a ceramic insulation film 3 is formed on one side by thermal spraying. 4 is a hole having a predetermined pattern; 5 is a hole. 7 is a pressure jig for pressing the heater 5 against the insulation sheath M3 with a predetermined pressure. This is a partially cutaway perspective view of a degassing device used in a gas method. In the figure, 8 is a vacuum member 1.
9 is a vacuum chamber t Even if an external heater 12 is attached to the outer wall of the vacuum chamber 9 so as to heat the vacuum member 1, the vacuum chamber 9 in which the vacuum member 1 is installed is evacuated by the vacuum pump 11, and when a certain degree of vacuum is reached, the heater 5 is heated.
When electricity is applied to selectively heat the vacuum member 1, only the heated area of the vacuum member 1 becomes high temperature, and the adsorbed gas is released. In the figure, 13 is an isomixer.This shows the temperature distribution inside the vacuum member 1 at the time of heating. However, the strain caused by heating can be alleviated. Also, if the vacuum member 1 is used as a linear cathode support member of an electron beam generator, a more stable electron beam can be obtained. 1 is a configuration diagram showing a method for degassing a vacuum member. In the figure, 14 is a laser light source for heating the ceramic insulating film 3, and the heater 5 in the embodiment shown in FIG. 1 is heated by the laser light source 14. This laser light source 14 can be used not only for degassing treatment but also for degassing treatment by placing it in the degassing treatment device shown in Fig. 2. Although it is possible to improve the film quality by melting a portion of the material, Figure 5 is a perspective view of the main part of an electron beam generator using a vacuum member that has been degassed by the degassing method of the present invention. Although striped control electrodes 16 are formed on the surface of the substrate 15 using a conductive film, a cathode support member 18 is installed to prevent vibration of the linear cathode 17, which causes screen disturbances and flickering. Even if a hole 19 through which the electron beam passes is provided corresponding to the control electrode 16, the filamentary cathode 17 is stretched across the hole 19 on the cathode support member 18, and the filament cathode 17 is stretched across the hole 19. has a thickness of 0. Metal substrate 2 of about 2mm
22 is an insulating plate for supporting the cathode support member 18; 23 is an insulating plate for supporting the cathode support member 18; This is an area that has been previously degassed at a high temperature.
第６図は第５図をＡ−Ａ線で切断した電子ビーム発生装
置の要部断面図であム 背面基板１５上に形成されたス
トライプ状の制御電極１６上に絶縁板２２が設置される
とともに 線条カソード１７の前方には電子ビーム取り
出し電極２４が配置されも この電子ビーム取り出し電
極２４に電位を与えて電子ビーム２５を取り出し 電子
ビーム２５の変調は制御電極１６へ印加される制御電圧
によって行う。図では省略した力交 電子ビーム２５の
前方には水平または垂直偏向電極があり、この偏向電極
により走査された電子ビーム２５が蛍光体に衝突し 画
像を表示すも ここで使用するカソード支持部材１８６
友 線条カソード１７が当接する領域を予め選択的に加
熱し脱ガス処理したものであム またカソード支持部材
１８を選択加熱処理する前に全体を低温で脱ガス処理す
ることも効果があも
このように本実施例の脱ガス方法で４１ 簡単に必要
とする領域のみを脱ガスすることができ、またこの方法
により必要領域のみを脱ガスされた真空部材は低歪で精
度もよく、この真空部材をカソード支持部材に使用する
ことにより電子ビームに悪影響を及ぼす有害ガスの発生
がなく、電子ビーム特性の優れた電子ビーム発生装置を
得ることができる。FIG. 6 is a cross-sectional view of the main part of the electron beam generator taken along line A-A in FIG. At the same time, an electron beam extraction electrode 24 is arranged in front of the linear cathode 17. A potential is applied to this electron beam extraction electrode 24 to extract an electron beam 25. The modulation of the electron beam 25 is performed by a control voltage applied to the control electrode 16. conduct. There is a horizontal or vertical deflection electrode in front of the electron beam 25, and the electron beam 25 scanned by this deflection electrode collides with the phosphor to display an image.The cathode support member 186 used here
The region in contact with the filamentary cathode 17 has been selectively heated and degassed in advance. It may also be effective to degas the entire cathode support member 18 at a low temperature before selectively heating it. In this way, the degassing method of this embodiment can easily degas only the required area, and the vacuum member that has been degassed only in the necessary area by this method has low distortion and good precision. By using a vacuum member for the cathode support member, no harmful gases that adversely affect the electron beam are generated, and an electron beam generator with excellent electron beam characteristics can be obtained.
発明の効果
以上のように本発明は真空部材が使用中に高温となる領
域を予め選択的に真空中で高温加熱することにより、真
空部材を変形させることなく吸着ガスを脱離させること
ができ、またこのように処理された真空部材を電子ビー
ム発生装置に使用してその性能品質を高めることのでき
る優れた真空部材の脱ガス方法 真空部材およびその真
空部材を使用した電子ビーム発生装置を実現できるもの
であムEffects of the Invention As described above, the present invention is capable of desorbing adsorbed gas without deforming the vacuum member by selectively heating the area of the vacuum member that becomes high temperature during use in vacuum at a high temperature in advance. , and an excellent method for degassing vacuum members that allows vacuum members treated in this way to be used in electron beam generators to improve their performance quality.A vacuum member and an electron beam generator using the vacuum member are realized. What can I do?
第１図は本発明の一実施例における脱ガス方法を示す構
成図 第２図は本発明の脱ガス方法に使用する脱ガス処
理装置の部分切り欠き斜視図 第３図はヒータを使用し
て加熱したときの真空部材内の温度分布医 第４図は本
発明における他の実施例における真空部材の脱ガス方法
を示す構成医第５図は本発明における脱ガス方法により
脱ガス処理した真空部材を用いた電子ビーム発生装置の
要部斜視医 第６図は第５図をＡ−Ａ線で切断した電子
ビーム発生装置の要部断面図 第７図は溶射製膜法によ
って製膜された膜の断面図 第８図は従来の脱ガス方法
に使用される脱ガス装置の部分切り欠き斜視医 第９図
は溶射膜の脱ガス性能特性図であも
１・・・真空部材、 ５・・化−久 ６・・・電洗代理
人の氏名 弁理士 粟野重孝 はか１名第
図
第
図
第
図
第
図
ｑ？Fig. 1 is a block diagram showing a degassing method according to an embodiment of the present invention. Fig. 2 is a partially cutaway perspective view of a degassing treatment device used in the degassing method of the present invention. Fig. 3 is a block diagram showing a degassing method using a heater. Temperature distribution inside the vacuum member when heated FIG. 4 shows a degassing method for a vacuum member in another embodiment of the present invention FIG. 5 shows a vacuum member degassed by the degassing method of the present invention Figure 6 is a sectional view of the main parts of the electron beam generator taken along line A-A in Figure 5. Figure 7 is a film formed by thermal spray coating. Figure 8 is a partially cutaway perspective view of a degassing device used in a conventional degassing method. Figure 9 is a diagram of the degassing performance characteristics of a thermally sprayed film. 6... Name of Denarai agent Patent attorney Shigetaka Awano Haka 1 person Figure q Figure q?
Claims (6)
に真空中で高温加熱し、吸着ガスを脱離させる真空部材
の脱ガス方法。(1) A method for degassing a vacuum member in which a region of the vacuum member that becomes hot during use is selectively heated in advance to a high temperature in a vacuum to desorb adsorbed gas.
なる領域の形状に合わせた形状を有するヒータによる請
求項１記載の真空部材の脱ガス方法。(2) The method for degassing a vacuum member according to claim 1, wherein the means for heating at a high temperature is a heater having a shape matching the shape of a region where the vacuum member becomes high temperature during use.
１記載の真空部材の脱ガス方法。(3) The method for degassing a vacuum member according to claim 1, wherein the means for heating at a high temperature is laser beam irradiation.
属基板を真空中で使用する時に高温となる領域を予め高
温加熱して吸着ガスを脱離させた真空部材。(4) A vacuum member in which an area of a metal substrate on which an insulating film is formed on the surface by a thermal spray coating method is heated to a high temperature in advance to remove adsorbed gas when used in a vacuum.
温で脱ガス処理された請求項４記載の真空部材。(5) The vacuum member according to claim 4, wherein the metal substrate on which the insulating film is formed is degassed at a low temperature before being heated at a high temperature.
板と、その背面基板上の所定形状のパターン導電膜に交
差して設けた絶縁膜と、電子放射物質を保持する線条カ
ソードと、その線条カソードを支持する線条カソード支
持部材と、線条カソードの前方に配設された電子ビーム
取り出し電極とを備え前記線条カソード支持部材が請求
項４または５記載の真空部材からなる電子ビーム発生装
置。(6) A back substrate having a patterned conductive film as a control electrode, an insulating film provided across the patterned conductive film of a predetermined shape on the back substrate, a linear cathode holding an electron emitting substance, and the line. Electron beam generation comprising a linear cathode support member supporting a linear cathode, and an electron beam extraction electrode disposed in front of the linear cathode, wherein the linear cathode support member is the vacuum member according to claim 4 or 5. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15098790A JPH0445261A (en) | 1990-06-08 | 1990-06-08 | Method for degassing vacuum member, vacuum member and electron beam generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15098790A JPH0445261A (en) | 1990-06-08 | 1990-06-08 | Method for degassing vacuum member, vacuum member and electron beam generating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0445261A true JPH0445261A (en) | 1992-02-14 |
Family
ID=15508811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15098790A Pending JPH0445261A (en) | 1990-06-08 | 1990-06-08 | Method for degassing vacuum member, vacuum member and electron beam generating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0445261A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100218A (en) * | 2006-12-18 | 2007-04-19 | Toshiba Corp | Component for vacuum film deposition system, vacuum film deposition system using the same, and target and backing plate |
| JP2010236094A (en) * | 2010-05-31 | 2010-10-21 | Toshiba Corp | Method of manufacturing component for vacuum film forming device |
| JP2011094239A (en) * | 2011-01-21 | 2011-05-12 | Toshiba Corp | Method for producing component for vacuum film deposition system |
| US7942975B2 (en) | 2004-11-08 | 2011-05-17 | Tokyo Electron Limited | Ceramic sprayed member-cleaning method |
| CN107868942A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | One kind goes to gas chamber and its removes gas method and semiconductor processing equipment |
-
1990
- 1990-06-08 JP JP15098790A patent/JPH0445261A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7942975B2 (en) | 2004-11-08 | 2011-05-17 | Tokyo Electron Limited | Ceramic sprayed member-cleaning method |
| JP2007100218A (en) * | 2006-12-18 | 2007-04-19 | Toshiba Corp | Component for vacuum film deposition system, vacuum film deposition system using the same, and target and backing plate |
| JP2010236094A (en) * | 2010-05-31 | 2010-10-21 | Toshiba Corp | Method of manufacturing component for vacuum film forming device |
| JP2011094239A (en) * | 2011-01-21 | 2011-05-12 | Toshiba Corp | Method for producing component for vacuum film deposition system |
| CN107868942A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | One kind goes to gas chamber and its removes gas method and semiconductor processing equipment |
| WO2018058898A1 (en) * | 2016-09-27 | 2018-04-05 | 北京北方华创微电子装备有限公司 | Degassing method, degassing chamber and semiconductor processing equipment |
| CN107868942B (en) * | 2016-09-27 | 2019-11-29 | 北京北方华创微电子装备有限公司 | One kind going to gas chamber and its removes gas method and semiconductor processing equipment |
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