JPH0443639A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0443639A JPH0443639A JP15182790A JP15182790A JPH0443639A JP H0443639 A JPH0443639 A JP H0443639A JP 15182790 A JP15182790 A JP 15182790A JP 15182790 A JP15182790 A JP 15182790A JP H0443639 A JPH0443639 A JP H0443639A
- Authority
- JP
- Japan
- Prior art keywords
- water
- tank
- drying
- basket
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 65
- 235000012431 wafers Nutrition 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 16
- 238000007599 discharging Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 abstract description 37
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009736 wetting Methods 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体プロセスにおける前処理、後処理等の各湿潤処理
後に半導体ウェハの乾燥を行う半導体装置の製造方法に
関し、
大口径の半導体ウェハであっても簡易に安定した乾燥を
行うことを目的とし、
半導体プロセスにおける所定の湿潤処理後に、半導体ウ
ェハの乾燥を行う半導体装置の製造方法において、水が
満たされた所定形状の槽内に所定数の前記半導体ウェハ
を浸漬し、前記湿潤処理後に該水の表面張力により乾燥
させるべく、所定流速で所定量づつ排水するように構成
する。[Detailed Description of the Invention] [Summary] This invention relates to a method for manufacturing a semiconductor device that dries a semiconductor wafer after each wet treatment such as pre-treatment and post-treatment in a semiconductor process. In a method for manufacturing a semiconductor device in which a semiconductor wafer is dried after a predetermined wet treatment in a semiconductor process, a predetermined number of semiconductor wafers are immersed in a tank of a predetermined shape filled with water. After the wet treatment, the water is drained in a predetermined amount at a predetermined flow rate so as to be dried by the surface tension of the water.
本発明は、半導体プロセスにおける前処理、後処理等の
各湿潤処理後に半導体ウェハの乾燥を行う半導体装置の
製造方法に関する。The present invention relates to a semiconductor device manufacturing method in which a semiconductor wafer is dried after each wet treatment such as pretreatment and posttreatment in a semiconductor process.
半導体プロセスで半導体ウェハの各工程の前処理や後処
理の洗浄等の湿潤処理後に該半導体ウェハを乾燥しなけ
ればならない。近年半導体デバイスの微細化、ウェハの
大口径化に伴い、これらに適用可能な乾燥方法が必要と
なる。In a semiconductor process, a semiconductor wafer must be dried after wet processing such as pre-processing and post-processing cleaning for each step of the semiconductor wafer. In recent years, with the miniaturization of semiconductor devices and the increase in the diameter of wafers, a drying method applicable to these is required.
近年、半導体ウェハの湿潤処理後の乾燥方法には、ヒー
タ乾燥、スピン乾燥、ベーパ乾燥、引上乾燥等がある。In recent years, methods for drying semiconductor wafers after wet processing include heater drying, spin drying, vapor drying, and pull drying.
また、乾燥時には、当該半導体ウェハを保持するための
バスケットが必要であり、ＰＦＡ （Ｐｅｒ Ｆｌｕ
ｏｒｏ Ａｌｃｏｘｙ）バスケット等が使用される。Furthermore, during drying, a basket is required to hold the semiconductor wafer, and PFA (Per Flu
oro Alcoxy) baskets, etc. are used.
石英バスケットでは、主にヒータ乾燥等か使用されるが
、フッ酸処理で石英が溶出し、シミか発生する。また、
ＰＦＡバスケットでは、ロインチロ径位まてのウェハて
スピン乾燥が主に行われる。For quartz baskets, heater drying is mainly used, but quartz is eluted during hydrofluoric acid treatment and stains occur. Also,
In the PFA basket, spin drying is mainly performed on wafers up to the center diameter.
そして、ロインチロ径以上のウェハでは、上記のベーパ
乾燥、引上乾燥が検討されている。なお、ベーパ乾ｔ９
４はイソプロピロアルコール等のアルコール蒸気により
ウェハに付着している水と反応させて乾燥させるもので
ある。For wafers with diameters larger than 100%, the above-mentioned vapor drying and pull drying are being considered. In addition, vapor dry T9
4 is for drying the wafer by reacting the water adhering to the wafer with alcohol vapor such as isopropyl alcohol.
ここで、第３図に引上乾燥の構成図を示す。洗浄水２０
が満たされた槽２１内に、複数の半導体ウェハ（図示せ
ず）が保持されたバスケット２２が位置される。バスケ
ット２２の口部には掛止部２２ａが形成されいる。一方
、制御台２３にはりニアモータ２４が設けられており、
このリニアモータ２４より駆動アーム２５か延出し、上
下動する。また、駆動アーム２５の先端には一対のクラ
ンプ２６が設けられ、該クランプ鉤部２６ａ。Here, FIG. 3 shows a block diagram of pulling drying. Washing water 20
A basket 22 holding a plurality of semiconductor wafers (not shown) is placed in a tank 21 filled with water. A hook 22a is formed at the mouth of the basket 22. On the other hand, the control stand 23 is provided with a beam near motor 24,
A drive arm 25 extends from this linear motor 24 and moves up and down. Further, a pair of clamps 26 are provided at the tip of the drive arm 25, and the clamp hooks 26a.
２６ｂでバスケット２２の掛止部２２ａを掛止してバス
ケット２２を引上げる。At 26b, the hook 22a of the basket 22 is hooked and the basket 22 is pulled up.
この引上乾燥は水の表面張力を利用したものである。す
なわち、モータ２４により低速（例えば１０〜１５ｍｒ
／ｍ１ｎ）でバスケット２２を引上げることにより半導
体ウェハ上には表面張力で水滴か残らず、乾燥させるも
のである。This pulling drying utilizes the surface tension of water. That is, the motor 24 operates at a low speed (for example, 10 to 15 mr).
/m1n) to dry the semiconductor wafer without leaving any water droplets on the semiconductor wafer due to surface tension.
このような引上乾燥は、半導体ウニ／％の大口径化に対
しても比較的容易に対応できる方法である。Such pulling drying is a method that can be relatively easily applied to large-diameter semiconductor sea urchins/%.
しかし、ヒータ乾燥はＰＦＡバスケットでは熱変形を生
じ、石英バスケットでは前述のようにフッ酸処理で石英
の溶出を生じる。スピン乾燥は、石英バスケットでは破
損する危険性かあり、ＰＦＡバスケットでは前述のよう
に大口径のウエノ＼にはそのまま適用できない。ベーパ
乾燥は、炭素の付着や防爆対策か必要であり、大損りと
なる。However, drying with a heater causes thermal deformation in a PFA basket, and in the case of a quartz basket, hydrofluoric acid treatment causes elution of quartz as described above. Spin drying has the risk of damaging quartz baskets, and PFA baskets cannot be applied to large-diameter Ueno as described above. Vapor drying requires countermeasures against carbon adhesion and explosion prevention, which is a big loss.
また、引上乾燥は、石英バスケット（２２）ではクラン
プ２６により発塵を生じ、ＰＦＡバスケ・ント（２２）
では重量が重く引」二のためのモータ２４の高出力化が
必要となる。一方、半導体ウェハの口径が大きくなると
全重量が重く（例えば３．５〜４．０ｋｇ）なって機構
が大損りとなり、引上げ速度の変更や調整が困姪である
という問題かあるまた、クランプ２６か液中に入ること
から汚染等の管理か必要になるという問題かある。In addition, during pulling drying, dust is generated due to the clamp 26 in the quartz basket (22), and dust is generated in the PFA basket (22).
Therefore, the weight is heavy, and the motor 24 for pulling it needs to have a high output. On the other hand, as the diameter of the semiconductor wafer becomes larger, the total weight becomes heavier (for example, 3.5 to 4.0 kg), which causes serious damage to the mechanism and makes it difficult to change or adjust the pulling speed. There is also the issue of the need to manage contamination as it enters the liquid.
そこで、本発明は上記課題に鑑みなされたものて、大口
径の半導体ウェハであっても簡易（こ安定した乾燥を行
う半導体装置の製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device that performs simple (and stable) drying even for large-diameter semiconductor wafers.
上記課題は、半導体プロセスにおける所定の湿潤処理後
に、半導体ウェハの乾燥を行う半導体装置の製造方法に
おいて、水が満たされた所定の槽内に所定数の前記半導
体ウェハを浸漬し、前記湿潤処理後に、該水の表面張力
により乾燥させるべ（、所定流速で所定量づつ排水する
ことにより解決される。The above problem is solved in a semiconductor device manufacturing method in which a semiconductor wafer is dried after a predetermined wet treatment in a semiconductor process. , the surface tension of the water should be used to dry the water.
また、槽の形状により半導体ウェハの位置に対応させて
該水面の面積を変化させ、該水面の下降速度を変化させ
ている。一方、種形状を一定の幅として排水量を調節し
て、該水面の下降速度を変化させている。Further, depending on the shape of the tank, the area of the water surface is changed in accordance with the position of the semiconductor wafer, and the rate of descent of the water surface is changed. On the other hand, the rate at which the water surface descends is varied by adjusting the amount of drainage by setting the seed shape to a constant width.
」一連のように、本発明は湿潤処理後に、所定流速で所
定量づつ排水を行っている。これにより、水の表面張力
により、半導体ウェハ面への水滴の付着が防止される。'' In the present invention, after the wet treatment, drainage is performed at a predetermined flow rate and a predetermined amount at a time. This prevents water droplets from adhering to the semiconductor wafer surface due to the surface tension of the water.
すなわち、排水するだけで引上げと同様の乾燥を行うこ
とが可能となる。従って、半導体ウェハが大口径化し、
これを保持しているバスケット全体の重量が増しても、
簡易かつ安定して乾燥を行うことが可能となる。槽の形
状を半導体ウェハ面の乾燥位置の違いに対応させて水面
の面積を変化させることにより、排水量か一定であって
も、槽の形状に応じて水面の下降速度が変化する。これ
により、半導体ウェハ面の乾燥のしにくい部分では水面
の下降速度を遅くして確実な乾燥を安定して行うことか
可能となる。In other words, it is possible to perform drying similar to lifting only by draining water. Therefore, the diameter of semiconductor wafers has increased,
Even if the weight of the entire basket that holds it increases,
It becomes possible to perform drying easily and stably. By changing the area of the water surface by changing the shape of the tank to correspond to the drying position of the semiconductor wafer surface, the rate of descent of the water surface changes depending on the shape of the tank even if the amount of water discharged is constant. This makes it possible to slow down the rate of descent of the water surface in areas of the semiconductor wafer surface that are difficult to dry, thereby ensuring reliable and stable drying.
また、同様の原理で櫂形状が一定の幅として排水量を調
整することにより、水面の下降速度を変化させている。In addition, based on the same principle, the speed at which the water surface descends is varied by adjusting the amount of water discharged while the paddle shape has a constant width.
これにより、確実な乾燥を安定して行うことが可能とな
る。This makes it possible to perform reliable and stable drying.
第１図に本発明方法の一実施例の構成図を示す。 FIG. 1 shows a block diagram of an embodiment of the method of the present invention.
第１図の乾燥装置において、槽】に水２が満たされてお
り、湿潤処理を行う半導体ウェハ３を保持したバスケッ
ト（キャリア）４が水中に浸漬される。槽１は胴部が円
弧状に膨らみを有する形状であり、また、底部に排水管
５が設けられている。In the drying apparatus shown in FIG. 1, a tank 2 is filled with water 2, and a basket (carrier) 4 holding a semiconductor wafer 3 to be wet-processed is immersed in the water. The tank 1 has a body having an arcuate bulge, and a drain pipe 5 is provided at the bottom.
そして、排水管５には流量計６及びバルブ７が介在され
る。A flow meter 6 and a valve 7 are interposed in the drain pipe 5.
また、バスケット４は例えばＰＦＡバスケットで形成さ
れ、半導体ウェハ３が図面奥方向に並設状態で保持され
る。この場合、半導体ウェハ３とバスケット４との接続
部分はＡ、〜Ａｓであり、特に接触点ＡＩ、Ａ７部分で
水滴の残存を防止しなければならない。Further, the basket 4 is formed of, for example, a PFA basket, and the semiconductor wafers 3 are held side by side in the direction toward the back of the drawing. In this case, the connecting portions between the semiconductor wafer 3 and the basket 4 are A, ~As, and it is necessary to prevent water droplets from remaining particularly at the contact points AI and A7.
このような乾燥装置は、半導体プロセスにおいて、拡散
、ＣＶＤ （化学気相成長法）の前処理、後処理等の湿
潤処理で行う水による洗浄後、水２を排水管５を介して
バルブ７より排水される。この場合、バルブ７を開放し
て排水を流量計６で例えば１０〜１５ｍｍ／ｍｉｎの流
速で一定量づつ行う。Such a drying device drains water 2 from a valve 7 through a drain pipe 5 after cleaning with water during wet processing such as diffusion, CVD (chemical vapor deposition) pre-treatment, and post-treatment in a semiconductor process. Drained. In this case, the valve 7 is opened and the water is drained at a constant rate using the flow meter 6 at a flow rate of, for example, 10 to 15 mm/min.
これにより、槽１内の水２の水面は、上方部分ては一定
速度で下降し、膨らみ部分では膨らみに応して、すなわ
ち、水面の面積が大きいほど下降速度が遅くなる。As a result, the water surface of the water 2 in the tank 1 descends at a constant speed in the upper portion, and in the bulging portion, the lowering speed becomes slower as the area of the water surface increases.
そして、その膨らみ部分は半導体ウェハ３の形状に対応
されており、該半導体ウェハ３の位置上で水平距離が大
きい部分（バスケット４との接触部分Ａ、、Ａ！ ）で
、水面の下降速度か最も遅くなる。すなわち、当該部分
で水滴が残存し易く、水平の下降速度をより遅くするこ
とで水の表面張力を発揮し易くしているものである。従
って、半導体ウェハの位置上水滴の付着しにくい部分は
水面の下降速度を速く、付着し易い分を遅くすることが
、ＴＪＦ水量か一定で槽１の形状を変化させることで制
御することができる。The bulging portion corresponds to the shape of the semiconductor wafer 3, and the portion where the horizontal distance is large on the position of the semiconductor wafer 3 (the contact portion A,, A! with the basket 4) is determined by the descending speed of the water surface. slowest. That is, water droplets tend to remain in this area, and by slowing down the horizontal downward speed, the surface tension of water is more likely to be exerted. Therefore, it is possible to increase the lowering speed of the water surface in areas where water droplets are difficult to adhere due to the position of the semiconductor wafer, and to slow down areas where water droplets easily adhere, by changing the shape of tank 1 while keeping the TJF water volume constant. .
このように、半導体ウェハを乾燥させるにあたり、第３
図のような機構が不要で簡易であり、バスケット４の引
上げによる振動等で水切れを生じることがなく安定した
乾燥を確実に行うことがてきる。また、乾燥途中の状態
であっても、半導体ウェハ３は槽１内にそのままの状態
で保持されるため、雰囲気的に安定した状態を保つこと
ができる。In this way, when drying semiconductor wafers, the third
The mechanism shown in the figure is unnecessary and simple, and stable drying can be ensured without causing water to run out due to vibrations caused by lifting the basket 4. Further, even in the middle of drying, the semiconductor wafer 3 is maintained in the tank 1 as it is, so that a stable atmosphere can be maintained.
次に、第２図に本発明の他の実施例の構成図を示す。第
２図の乾燥装置は、第１図における槽を一定の輻（例え
ば、箱状）の槽１ａとし、バルブ調整手段８を設けたも
のである。Next, FIG. 2 shows a configuration diagram of another embodiment of the present invention. In the drying apparatus shown in FIG. 2, the tank in FIG. 1 is replaced with a tank 1a having a constant concavity (for example, a box shape), and a valve adjustment means 8 is provided.
このような乾燥装置は、第１図における水平の下降速度
を槽の膨らみ部分で行うのではなく、バルブ７をバルブ
調整手段８により排水量を調節させて、下降速度を変化
させるものである。例えば、半導体ウェハ３とバスケッ
ト４との接触部分ＡＡ！に水面が位置したときに、バル
ブ調整手段８でバルブ７を若干閉めてｔＪｔ水量を少な
くして、当該分の水面の下降速度を遅くする。この場合
、バルブ調整手段８による制御は直線的に行うもので、
例えば水面の位置検出による制御又は時間制御により行
う。In such a drying apparatus, the horizontal descending speed shown in FIG. 1 is not performed by the bulging portion of the tank, but the amount of water discharged from the valve 7 is adjusted by the valve adjusting means 8 to change the descending speed. For example, the contact portion AA between the semiconductor wafer 3 and the basket 4! When the water surface is located at , the valve adjusting means 8 slightly closes the valve 7 to reduce the amount of water tJt, thereby slowing down the rate of descent of the water surface by that amount. In this case, the control by the valve adjusting means 8 is performed linearly,
For example, control is performed by detecting the position of the water surface or by time control.
以上のように本発明によれば、湿潤処理後に所定流速で
所定量づつ排水を行うことにより、簡易な構成で引上げ
乾燥と同様の乾燥をより安定して行うことができる。As described above, according to the present invention, by draining water in a predetermined amount at a predetermined flow rate after wetting treatment, drying similar to pull drying can be performed more stably with a simple configuration.
また、櫂形状又は排水量の調節で水面の下降速度を変化
させることにより、半導体ウェハの乾燥を確実に安定し
て行うことができる。Further, by changing the rate of descent of the water surface by adjusting the shape of the paddle or the amount of water discharged, semiconductor wafers can be reliably and stably dried.
７はバルブ。7 is a valve.
８はバルブ調整手段 を示す8 is valve adjustment means show
Claims (3)
導体ウェハ（３）の乾燥を行う半導体装置の製造方法に
おいて、 水が満たされた所定形状の槽（１、１ａ）内に所定数の
前記半導体ウェハ（３）を浸漬し、前記湿潤処理後に、
該水の表面張力により乾燥させるべく、所定流速で所定
量づつ排水することを特徴とする半導体装置の製造方法
。(1) In a method for manufacturing a semiconductor device in which a semiconductor wafer (3) is dried after a predetermined wet treatment in a semiconductor process, a predetermined number of the semiconductor wafers (3) are placed in a tank (1, 1a) of a predetermined shape filled with water. (3) is immersed and after the moistening treatment,
A method for manufacturing a semiconductor device, comprising discharging water in a predetermined amount at a predetermined flow rate so as to dry the water using surface tension.
体ウェハ（３）の位置に対応させて該水面の面積を変化
させる形状として、該水面の下降速度を該半導体ウェハ
（３）の位置に応じて変化させることを特徴とする請求
項（１）記載の半導体装置の製造方法。(2) The amount of water discharged is constant, and the shape of the tank (1) is such that the area of the water surface changes depending on the position of the semiconductor wafer (3), and the rate of descent of the water surface is adjusted to the position of the semiconductor wafer (3). 2. The method of manufacturing a semiconductor device according to claim 1, wherein the method changes depending on the position.
ハ（３）の位置に応じて前記排水量を調整して、該槽（
１ａ）内の水面の下降速度を変化させることを特徴とす
る請求項（１）記載の半導体装置の製造方法。(3) The width of the tank (1a) is constant, and the amount of water discharged is adjusted according to the position of the semiconductor wafer (3).
2. The method of manufacturing a semiconductor device according to claim 1, further comprising changing the rate of descent of the water surface in 1a).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15182790A JPH0443639A (en) | 1990-06-11 | 1990-06-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15182790A JPH0443639A (en) | 1990-06-11 | 1990-06-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0443639A true JPH0443639A (en) | 1992-02-13 |
Family
ID=15527182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15182790A Pending JPH0443639A (en) | 1990-06-11 | 1990-06-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0443639A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06224171A (en) * | 1993-01-25 | 1994-08-12 | Kyushu Komatsu Denshi Kk | Wafer cleaning method and device |
| US5485861A (en) * | 1993-10-19 | 1996-01-23 | Dan Science Co., Ltd. | Cleaning tank |
| US5842491A (en) * | 1995-12-18 | 1998-12-01 | Lg Semicon Co., Ltd. | Semiconductor wafer cleaning apparatus |
| US6616774B2 (en) * | 1997-12-26 | 2003-09-09 | Spc Electronics | Wafer cleaning device and tray for use in wafer cleaning device |
| JP2021084058A (en) * | 2019-11-27 | 2021-06-03 | 三菱電機株式会社 | Cleaning/drying method and cleaning/drying device |
-
1990
- 1990-06-11 JP JP15182790A patent/JPH0443639A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06224171A (en) * | 1993-01-25 | 1994-08-12 | Kyushu Komatsu Denshi Kk | Wafer cleaning method and device |
| US5485861A (en) * | 1993-10-19 | 1996-01-23 | Dan Science Co., Ltd. | Cleaning tank |
| US5842491A (en) * | 1995-12-18 | 1998-12-01 | Lg Semicon Co., Ltd. | Semiconductor wafer cleaning apparatus |
| US5885360A (en) * | 1995-12-18 | 1999-03-23 | Lg Semicon Co., Ltd. | Semiconductor wafer cleaning apparatus |
| US6616774B2 (en) * | 1997-12-26 | 2003-09-09 | Spc Electronics | Wafer cleaning device and tray for use in wafer cleaning device |
| JP2021084058A (en) * | 2019-11-27 | 2021-06-03 | 三菱電機株式会社 | Cleaning/drying method and cleaning/drying device |
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