JPH04370931A - Cleaning of substrate - Google Patents
Cleaning of substrateInfo
- Publication number
- JPH04370931A JPH04370931A JP3147569A JP14756991A JPH04370931A JP H04370931 A JPH04370931 A JP H04370931A JP 3147569 A JP3147569 A JP 3147569A JP 14756991 A JP14756991 A JP 14756991A JP H04370931 A JPH04370931 A JP H04370931A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- cleaning
- substrate
- water
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000007921 spray Substances 0.000 claims abstract description 10
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 7
- 238000009835 boiling Methods 0.000 claims abstract description 6
- 239000012530 fluid Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 20
- 239000006185 dispersion Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2230/00—Other cleaning aspects applicable to all B08B range
- B08B2230/01—Cleaning with steam
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、液晶用ガラス基板や
半導体基板などの各種基板の洗浄方法、さらに詳しくは
、トレンチ型構造の基板の洗浄に適した基板洗浄方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning various substrates such as liquid crystal glass substrates and semiconductor substrates, and more particularly to a substrate cleaning method suitable for cleaning substrates having a trench type structure.
【０００２】この明細書において、「純水」には超純水
を含むものとする。[0002] In this specification, "pure water" includes ultrapure water.
【０００３】0003
【従来の技術】従来、液晶用ガラス基板や半導体基板な
どの基板洗浄方法としては、純水による洗浄方法が採用
されていた。しかしながら、半導体の高集積化に伴って
半導体基板の微細化が進み、基板にトレンチ（溝）が掘
られたトレンチ型で、しかもトレンチが深い高アスペク
ト比の構造が増加してきており、このようなアスペクト
比の高いトレンチ型構造の基板を洗浄する場合、従来の
純水による洗浄方法では、基板のトレンチ内に純水が浸
透しにくく十分な洗浄効果が得られなかった。2. Description of the Related Art Conventionally, a cleaning method using pure water has been adopted as a method for cleaning substrates such as liquid crystal glass substrates and semiconductor substrates. However, as semiconductors become more highly integrated, semiconductor substrates become finer, and trench-type structures with deep trenches and high aspect ratios are on the rise. When cleaning a substrate with a trench-type structure having a high aspect ratio, the conventional cleaning method using pure water does not allow the pure water to penetrate into the trenches of the substrate, making it difficult to obtain a sufficient cleaning effect.
【０００４】このためアスペクト比の高いトレンチ型構
造の基板でも高い洗浄効果が得られるものとして、特開
平１−１８９１２７号公報に、純水を加熱して発生した
水蒸気で洗浄する手段と、純水で洗浄する手段と、純水
で洗浄するさいに超音波を発生させて洗浄効果を高める
手段と、水蒸気による洗浄と純水による洗浄とを切換え
る手段とを備えた基板洗浄方法が開示されている。For this reason, Japanese Patent Laid-Open No. 1-189127 discloses a means for cleaning with water vapor generated by heating pure water, and a method for cleaning with steam generated by heating pure water, and a method for cleaning with water vapor generated by heating pure water. A substrate cleaning method is disclosed that includes means for cleaning with water vapor, means for increasing the cleaning effect by generating ultrasonic waves during cleaning with pure water, and means for switching between cleaning with water vapor and cleaning with pure water. .
【０００５】[0005]
【発明が解決しようとする課題】上記基板洗浄方法では
、超音波を発生させて洗浄効果を高めるとともに、水蒸
気が微細な部分に浸透可能であるため、水蒸気が基板の
トレンチ内に浸透して純水による表面濡れ性を高め、ト
レンチ内の洗浄効果を高めるという利点を有するが、各
種の手段を必要とするため、装置の構成が複雑となり運
転監視および維持管理が面倒であり、かつ装置の使用材
料が多いため装置の製作費が高くつくという問題があっ
た。[Problems to be Solved by the Invention] In the above substrate cleaning method, ultrasonic waves are generated to enhance the cleaning effect, and since the water vapor can penetrate into minute parts, the water vapor penetrates into the trenches of the substrate and becomes pure. It has the advantage of increasing the surface wettability with water and increasing the cleaning effect inside the trench, but since it requires various means, the configuration of the device is complicated, operation monitoring and maintenance are troublesome, and the use of the device is There was a problem in that the production cost of the device was high because it required a lot of materials.
【０００６】この発明の目的は、装置の構成が簡単であ
るため運転監視および維持管理が容易であり、かつ装置
の使用材料が少ないため装置の製作費が低減できる基板
洗浄方法を提供することにある。[0006] An object of the present invention is to provide a substrate cleaning method in which operation monitoring and maintenance are easy due to the simple configuration of the device, and the manufacturing cost of the device can be reduced because less materials are used in the device. be.
【０００７】[0007]
【課題を解決するための手段】この発明による基板洗浄
方法は、基板洗浄装置内の圧力に対応する沸点より高温
になされた純水を純水の温度に対応する飽和蒸気圧以上
に加圧して洗浄装置内に設けられたスプレーノズルから
吹き出して基板を洗浄することを特徴とするものである
。[Means for Solving the Problems] A substrate cleaning method according to the present invention involves pressurizing pure water heated to a temperature higher than the boiling point corresponding to the pressure inside the substrate cleaning apparatus to a temperature higher than the saturated vapor pressure corresponding to the temperature of the pure water. The feature is that the substrate is cleaned by spraying air from a spray nozzle provided in the cleaning device.
【０００８】[0008]
【作用】基板洗浄装置内の圧力に対応する沸点より高温
になされた純水を純水の温度に対応する飽和蒸気圧以上
に加圧して洗浄装置内に設けられたスプレーノズルから
吹き出すと、純水の圧力が下がるためその一部が自己蒸
発して水蒸気となり、純水と水蒸気の混合流体ができ、
この混合流体が基板に衝突して基板が洗浄される。した
がって、水蒸気がトレンチ内に浸透して純水による表面
濡れ性を高め、同時に純水による洗浄が行なわれる。[Operation] Pure water heated to a temperature higher than the boiling point corresponding to the pressure inside the substrate cleaning equipment is pressurized to a level higher than the saturated vapor pressure corresponding to the temperature of the pure water and is blown out from the spray nozzle installed inside the cleaning equipment. As the water pressure decreases, some of it self-evaporates and becomes water vapor, creating a mixed fluid of pure water and water vapor.
This mixed fluid collides with the substrate to clean the substrate. Therefore, water vapor permeates into the trench to improve surface wettability with pure water, and at the same time, cleaning with pure water is performed.
【０００９】また、基板上において自己蒸発により発生
した多量の細かい気泡が、混合流体が基板に衝突したと
きに押しつぶされ、このときに発生する大きな圧力によ
り洗浄効果が高められる。すなわち、超音波洗浄のさい
のキャビテーション作用と同様の作用が得られる。Furthermore, a large number of fine bubbles generated on the substrate by self-evaporation are crushed when the mixed fluid collides with the substrate, and the large pressure generated at this time enhances the cleaning effect. That is, an effect similar to the cavitation effect during ultrasonic cleaning can be obtained.
【００１０】0010
【実施例】この発明の実施例を、以下図面を参照して説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the drawings.
【００１１】図１に示されているように、基板洗浄装置
（１） は、洗浄される基板（３） が取付けられた取
付け台（４） を運ぶコンベヤ（５） と、加圧された
純水を洗浄装置（１） 内に上方より供給する送水管（
１１）と、送水管（１１）で送られてきた純水を水平方
向に分流させる両端が閉じられた水平円筒状の分散管（
９） と、分散管（９） 下面に設けられた複数のスプ
レーノズル（１０）と、洗浄装置（１） 側壁の上部内
面に設けられた複数の冷却管（６） と、冷却管（６）
の外表面で凝縮した凝縮液を溜める凝縮液溜部（７）
と、凝縮液を洗浄装置（１） の底部に流下させる流
下管（８） と、底部に流下した凝縮液および基板（３
） を洗浄した後の排水を多重効用純水製造装置（２）
に送る純水回収管（１２）とを備えている。As shown in FIG. 1, the substrate cleaning apparatus (1) comprises a conveyor (5) carrying a mounting table (4) on which a substrate (3) to be cleaned is mounted, and a pressurized pure water conveyor (5). A water pipe that supplies water into the cleaning device (1) from above (
11) and a horizontal cylindrical dispersion pipe (
9) and a dispersion pipe (9), a plurality of spray nozzles (10) provided on the lower surface, and a cleaning device (1), a plurality of cooling pipes (6) provided on the upper inner surface of the side wall, and a cooling pipe (6).
condensate reservoir (7) that collects condensate condensed on the outer surface of the
, a flow pipe (8) that allows the condensate to flow down to the bottom of the cleaning device (1), and a flow pipe (8) that allows the condensate to flow down to the bottom and the substrate (3).
) Multi-effect pure water production equipment (2)
A pure water recovery pipe (12) is provided.
【００１２】以下に、トレンチ型構造の半導体基板を洗
浄する場合を例にしてその作用について説明する。[0012] The operation will be explained below, taking as an example the case of cleaning a semiconductor substrate having a trench type structure.
【００１３】洗浄用の純水は、多重効用純水製造装置（
２） で製造され、温度１０５℃、比抵抗１８ＭΩ・ｃ
ｍの特性をもつ。洗浄装置（１） 内は大気圧で操作さ
れており、純水は、送水管（１１）内および分散管（９
）内で自己蒸発しないように、１０５℃の飽和蒸気圧（
約１２０．８ｋＰａ）以上に加圧されている。[0013] The pure water for cleaning is produced using a multi-effect pure water production device (
2) Manufactured at temperature 105℃, specific resistance 18MΩ・c
It has the characteristics of m. The inside of the cleaning device (1) is operated at atmospheric pressure, and pure water is distributed in the water pipe (11) and the dispersion pipe (9).
) at a saturated vapor pressure of 105°C (
The pressure is approximately 120.8 kPa) or higher.
【００１４】加圧状態で送られてきた純水をスプレーノ
ズル（１０）から吹き出すと、スプレーノズル（１０）
を通過と同時に、純水の圧力が大気圧近くに降下するた
め、純水の一部が純水粒子の表面および粒子内より自己
蒸発して水蒸気となり、純水と水蒸気の混合流体ができ
、この混合流体が基板（３） に衝突して基板（３）
を洗浄する。When the pure water sent under pressure is blown out from the spray nozzle (10), the spray nozzle (10)
At the same time as passing through, the pressure of pure water drops to near atmospheric pressure, so some of the pure water self-evaporates from the surface and inside of the pure water particles and becomes water vapor, creating a mixed fluid of pure water and water vapor. This mixed fluid collides with the substrate (3) and
Wash.
【００１５】スプレーされた水蒸気は基板（３） 面の
微細加工のトレンチ内に浸透し、純水による表面濡れ性
を高め、トレンチ内の洗浄効果を高める。[0015] The sprayed water vapor permeates into the microfabricated trenches on the surface of the substrate (3), increases surface wettability with pure water, and improves the cleaning effect within the trenches.
【００１６】また、純水の一部が自己蒸発するときの体
積膨脹エネルギーが純水の基板（３）への衝突力を増加
させて、基板（３） に付着している微粒子などの汚染
物の洗浄効果が高められる。[0016] Furthermore, the energy of volumetric expansion when a part of the pure water self-evaporates increases the collision force of the pure water against the substrate (3), causing contaminants such as fine particles adhering to the substrate (3) to The cleaning effect is enhanced.
【００１７】さらに、純水粒子内で発生した水蒸気の一
部は粒子内で気泡状態で閉じこめられて基板（３） に
衝突し、衝突と同時に気泡が砕け、このときの砕け力に
より、洗浄効果が高められる。Furthermore, a part of the water vapor generated within the pure water particles is trapped in the form of bubbles and collides with the substrate (3), and the bubbles are crushed at the same time as the collision, and the crushing force at this time improves the cleaning effect. is enhanced.
【００１８】さらにまた、基板上において自己蒸発によ
り発生した多量の細かい気泡が、混合流体が基板に衝突
したときに押しつぶされ、このときに発生する大きな圧
力により洗浄効果が高められる。すなわち、超音波洗浄
のさいのキャビテーション作用と同様の作用が得られる
。Furthermore, a large number of fine bubbles generated on the substrate by self-evaporation are crushed when the mixed fluid collides with the substrate, and the large pressure generated at this time enhances the cleaning effect. That is, an effect similar to the cavitation effect during ultrasonic cleaning can be obtained.
【００１９】また、気泡の破壊時に一部の水蒸気は基板
（３） 面のトレンチ内に浸透し、スプレーされた水蒸
気によって高められた表面濡れ性をさらに高める。Furthermore, when the bubbles are destroyed, some of the water vapor penetrates into the trenches on the surface of the substrate (3), further enhancing the surface wettability that has been increased by the sprayed water vapor.
【００２０】基板（３） 面を洗浄した混合流体の内、
大気圧時の沸点の１００℃までほぼ低下した洗浄排水は
、洗浄装置（１） の底部に設けられた純水回収管（１
２）を通って多重効用純水製造装置（２） に戻され再
利用される。一方、水蒸気は管内を冷却水が流れる冷却
管（６） の外表面で凝縮し、この凝縮液は凝縮液溜部
（７） より流下管（８）を通って洗浄装置（１） の
底部に流下し、洗浄排水と同様、洗浄装置（１） の底
部に設けられた純水回収管（１２）を通って多重効用純
水製造装置（２） に戻され再利用される。Of the mixed fluid that cleaned the surface of the substrate (3),
The cleaning wastewater, whose boiling point has almost reached 100°C at atmospheric pressure, is collected in a pure water recovery pipe (1) installed at the bottom of the cleaning device (1).
2) and is returned to the multiple effect pure water production equipment (2) for reuse. On the other hand, water vapor condenses on the outer surface of the cooling pipe (6) through which cooling water flows, and this condensate flows from the condensate reservoir (7) through the downflow pipe (8) to the bottom of the cleaning device (1). The water flows down and, like cleaning wastewater, passes through the pure water recovery pipe (12) installed at the bottom of the cleaning device (1) and is returned to the multiple effect pure water production device (2) for reuse.
【００２１】上記の実施例では洗浄装置（１） 内の圧
力は大気圧で操作されているが、洗浄装置（１） 内の
圧力は大気圧より高くても低くてもよい。いずれの場合
でも、分散管（９） 内の純水の温度が洗浄装置（１）
内の操作圧力に対応する水の沸点より高く、かつ、ス
プレーノズル（１０）の直前までは送水管（１１）およ
び分散管（９） 内で純水が自己蒸発しないように、純
水の温度に対応する飽和蒸気圧以上に純水の圧力が加圧
されていればよい。In the above embodiments, the pressure inside the cleaning device (1) is operated at atmospheric pressure, but the pressure inside the cleaning device (1) may be higher or lower than atmospheric pressure. In either case, the temperature of the pure water in the dispersion tube (9) will be lower than that of the cleaning device (1).
The temperature of the pure water is higher than the boiling point of water corresponding to the operating pressure inside the pipe, and up to just before the spray nozzle (10), the temperature of the pure water is set so that it does not self-evaporate in the water pipe (11) and the dispersion pipe (9). It is sufficient that the pressure of the pure water is pressurized to a value higher than the saturated vapor pressure corresponding to the saturated vapor pressure.
【００２２】また、さらに洗浄効果を高めるために、純
水がスプレーノズル（１０）から吹き出される前に、過
酸化水素あるいはオゾンが注入されていてもよい。Furthermore, in order to further enhance the cleaning effect, hydrogen peroxide or ozone may be injected before the pure water is blown out from the spray nozzle (10).
【００２３】[0023]
【発明の効果】この発明による基板洗浄方法によると、
水蒸気が基板のトレンチ内に浸透して純水による表面濡
れ性を高め、同時に純水による洗浄が行なわれ、さらに
多量の気泡が押しつぶされて超音波洗浄のさいのキャビ
テーション作用と同様の作用が得られるので、純水で洗
浄するさいに超音波を発生させて洗浄効果を高める手段
および水蒸気による洗浄と純水による洗浄とを切換える
手段が必要ない。[Effects of the Invention] According to the substrate cleaning method according to the present invention,
The water vapor penetrates into the trenches of the substrate, increasing surface wettability with pure water, and at the same time cleaning with pure water occurs, and a large number of air bubbles are crushed, creating an effect similar to the cavitation effect during ultrasonic cleaning. Therefore, when cleaning with pure water, there is no need for a means for generating ultrasonic waves to enhance the cleaning effect and a means for switching between cleaning with water vapor and cleaning with pure water.
【００２４】したがって装置の構成が簡単であるため運
転監視および維持管理が容易であり、かつ装置の使用材
料が少ないため装置の製作費が低減できる。[0024] Therefore, since the configuration of the device is simple, operation monitoring and maintenance are easy, and since less materials are used for the device, the manufacturing cost of the device can be reduced.
【図１】この発明を実施する装置の垂直断面略図である
。1 is a schematic vertical cross-sectional view of an apparatus implementing the invention; FIG.
（１） 洗浄装置 （３） 基板 （１０） スプレーノズル (1) Cleaning equipment (3) Substrate (10) Spray nozzle
Claims (1)
より高温になされた純水を純水の温度に対応する飽和蒸
気圧以上に加圧して洗浄装置内に設けられたスプレーノ
ズルから吹き出して基板を洗浄することを特徴とする基
板洗浄方法。Claim 1: Pure water heated to a temperature higher than the boiling point corresponding to the pressure inside the substrate cleaning equipment is pressurized to a saturated vapor pressure corresponding to the temperature of the pure water and then blown out from a spray nozzle provided in the cleaning equipment. A substrate cleaning method characterized by cleaning a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3147569A JP2654874B2 (en) | 1991-06-19 | 1991-06-19 | Substrate cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3147569A JP2654874B2 (en) | 1991-06-19 | 1991-06-19 | Substrate cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04370931A true JPH04370931A (en) | 1992-12-24 |
| JP2654874B2 JP2654874B2 (en) | 1997-09-17 |
Family
ID=15433323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3147569A Expired - Lifetime JP2654874B2 (en) | 1991-06-19 | 1991-06-19 | Substrate cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2654874B2 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998037575A1 (en) * | 1997-02-24 | 1998-08-27 | Seiko Epson Corporation | Surface treatment method and apparatus therefor |
| EP1153670A2 (en) * | 2000-05-12 | 2001-11-14 | Pink Gmbh thermosysteme | Cleaning system |
| US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| JP2004349577A (en) * | 2003-05-23 | 2004-12-09 | Aqua Science Kk | Object processing device and object processing method |
| US6830628B2 (en) | 1997-05-09 | 2004-12-14 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7264680B2 (en) | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| WO2008153107A1 (en) * | 2007-06-14 | 2008-12-18 | Aqua Science Corporation | Method of cleaning object and object cleaning system |
| JP2010118681A (en) * | 1999-08-12 | 2010-05-27 | Aqua Science Kk | Resist film removal apparatus, and resist film removal method |
| JP2011228385A (en) * | 2010-04-16 | 2011-11-10 | Denso Corp | Cleaning/drying method and cleaning/drying device |
| JP2013055292A (en) * | 2011-09-06 | 2013-03-21 | Tdk Corp | Cleaning dryer |
| WO2014205143A1 (en) * | 2013-06-18 | 2014-12-24 | Advanced Wet Technologies Gmbh | Hyperbaric methods and systems for surface treatment, cleaning, and drying: thin liquid h-cnx |
| SE1900201A1 (en) * | 2019-11-25 | 2021-05-26 | Fettavskiljaren Sverige Ab | Cleaning device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100732519B1 (en) * | 2006-03-31 | 2007-06-28 | 세메스 주식회사 | Apparatus and method for treating substrates |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63182656A (en) * | 1987-01-26 | 1988-07-27 | Hitachi Ltd | Cleaning device |
-
1991
- 1991-06-19 JP JP3147569A patent/JP2654874B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63182656A (en) * | 1987-01-26 | 1988-07-27 | Hitachi Ltd | Cleaning device |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998037575A1 (en) * | 1997-02-24 | 1998-08-27 | Seiko Epson Corporation | Surface treatment method and apparatus therefor |
| US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US6830628B2 (en) | 1997-05-09 | 2004-12-14 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6843857B2 (en) | 1997-05-09 | 2005-01-18 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7264680B2 (en) | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| JP2010118681A (en) * | 1999-08-12 | 2010-05-27 | Aqua Science Kk | Resist film removal apparatus, and resist film removal method |
| EP1153670A2 (en) * | 2000-05-12 | 2001-11-14 | Pink Gmbh thermosysteme | Cleaning system |
| EP1153670A3 (en) * | 2000-05-12 | 2003-07-09 | Pink Gmbh thermosysteme | Cleaning system |
| JP2004349577A (en) * | 2003-05-23 | 2004-12-09 | Aqua Science Kk | Object processing device and object processing method |
| WO2008153107A1 (en) * | 2007-06-14 | 2008-12-18 | Aqua Science Corporation | Method of cleaning object and object cleaning system |
| JP2011228385A (en) * | 2010-04-16 | 2011-11-10 | Denso Corp | Cleaning/drying method and cleaning/drying device |
| JP2013055292A (en) * | 2011-09-06 | 2013-03-21 | Tdk Corp | Cleaning dryer |
| WO2014205143A1 (en) * | 2013-06-18 | 2014-12-24 | Advanced Wet Technologies Gmbh | Hyperbaric methods and systems for surface treatment, cleaning, and drying: thin liquid h-cnx |
| SE1900201A1 (en) * | 2019-11-25 | 2021-05-26 | Fettavskiljaren Sverige Ab | Cleaning device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2654874B2 (en) | 1997-09-17 |
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