JP2011120994A - Method for manufacturing nano-bubble water containing saturated gas and device for manufacturing nano-bubble water containing saturated gas - Google Patents
Method for manufacturing nano-bubble water containing saturated gas and device for manufacturing nano-bubble water containing saturated gas Download PDFInfo
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- JP2011120994A JP2011120994A JP2009280066A JP2009280066A JP2011120994A JP 2011120994 A JP2011120994 A JP 2011120994A JP 2009280066 A JP2009280066 A JP 2009280066A JP 2009280066 A JP2009280066 A JP 2009280066A JP 2011120994 A JP2011120994 A JP 2011120994A
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 308
- 239000002101 nanobubble Substances 0.000 title claims abstract description 158
- 229920006395 saturated elastomer Polymers 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000004090 dissolution Methods 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 8
- 239000012528 membrane Substances 0.000 claims description 27
- 238000007872 degassing Methods 0.000 claims description 16
- 239000011148 porous material Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 201
- 239000002245 particle Substances 0.000 description 24
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000329 molecular dynamics simulation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
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- Separation Using Semi-Permeable Membranes (AREA)
- Degasification And Air Bubble Elimination (AREA)
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Abstract
Description
この発明は、ガス溶解した純水からナノバブル水を生成する飽和ガス含有ナノバブル水の製造方法、および、飽和ガス含有ナノバブル水の製造装置に関し、より詳細には、パーテイクルフリーでメタルフリーなナノバブル水を、より安定に製造し、又、ナノバブル量を制御することにより、半導体、液晶をはじめとする電子産業分野に使用可能な飽和ガス含有ナノバブル水の製造方法及び飽和ガス含有ナノバブル水の製造装置に関する。 TECHNICAL FIELD The present invention relates to a method for producing saturated gas-containing nanobubble water that generates nanobubble water from gas-dissolved pure water, and a saturated gas-containing nanobubble water producing apparatus, and more particularly, particle-free and metal-free nanobubble water. In addition, the present invention relates to a method for producing saturated gas-containing nanobubble water and an apparatus for producing saturated gas-containing nanobubble water that can be used in the electronic industry including semiconductors and liquid crystals by controlling the amount of nanobubbles more stably. .
電子産業におけるパーテイクル除去は、従来からＡＰＭ（アンモニア、過酸化水素）が使用されていた。しかし、近年、純水に水素ガスを溶解させた水素水を使用し、それにメガソニックをかけることで洗浄が行われてきている。 Conventionally, APM (ammonia, hydrogen peroxide) has been used for particle removal in the electronics industry. However, in recent years, cleaning has been performed by using hydrogen water obtained by dissolving hydrogen gas in pure water and applying megasonic to it.
しかしながら、近年、例えば半導体の製造では、回路パターンの線幅が狭まり、アスペクト比が大きくなるにつれ、メガソニックによる回路パターンだおれが発生するようになった。 However, in recent years, for example, in the manufacture of semiconductors, as the line width of a circuit pattern is narrowed and the aspect ratio is increased, the circuit pattern is distorted by megasonics.
そのため、救急対応として、メガソニックの出力を小さくして対応しているのが現状である。 Therefore, the current situation is that the output of Megasonic is reduced as an emergency response.
また、他の方法として、例えば２流体ジェット等を用いて洗浄することが試験的に行われているが、ガスと水の２流体が安定にジェットノズルから出力されることがなかなか難しい。 As another method, for example, cleaning using a two-fluid jet or the like is experimentally performed, but it is difficult to stably output two fluids of gas and water from a jet nozzle.
また、洗浄効果が、従来の水素水とメガソニックに比べ、パーテイクル除去の効果がなかなか得られない状況である。 In addition, it is difficult to obtain a particle removal effect compared to conventional hydrogen water and megasonic.
このため、ナノバブル水を用いて洗浄することが考えられ、ナノバブル水の製造として例えば、超音波のエネルギも必要でなく、水素を含む微小気泡等が安定して分散する水を製造する技術（特許文献１）、また加圧ポンプを使用し物理的障害物を設定した配管内に水流と気体を送り、強制的に加圧混入を行うことでマイクロバブルを発生させる技術などがある（特許文献２〜５）。 For this reason, it is conceivable to wash using nanobubble water. For example, a technology for producing water in which microbubbles containing hydrogen are stably dispersed without the need for ultrasonic energy as a production of nanobubble water (patent) Document 1), and a technique for generating microbubbles by sending a water flow and gas into a pipe in which a physical obstacle is set using a pressure pump and forcibly mixing the pressure (Patent Document 2) ~ 5).
この発明は、前述の従来技術の問題点を解消し、パーテイクル除去の効果を得ることが可能で、かつ長期間にわたり連続的で、また常に安定なガス飽和ナノバブル水を得ることが可能な飽和ガス含有ナノバブル水の製造方法及び飽和ガス含有ナノバブル水の製造装置を提供することを目的とする。 The present invention solves the above-mentioned problems of the prior art, can obtain the effect of particle removal, and is a saturated gas capable of obtaining gas-saturated nanobubble water that is continuous for a long period of time and always stable. It aims at providing the manufacturing method of containing nano bubble water, and the manufacturing apparatus of saturated gas containing nano bubble water.
前記課題を解決し、かつ目的を達成するために、この発明は、以下のように構成した。 In order to solve the above-described problems and achieve the object, the present invention is configured as follows.
請求項１に記載の発明は、
純水を脱気して脱気純水を生成する脱気工程と、
前記脱気純水に溶解目的のガスを加圧し溶解してガス飽和の溶解純水を生成するガス溶解工程と、
前記ガス溶解工程において前記溶解目的のガスの圧力を制御する圧力制御工程と、
前記ガス溶解工程を経た前記ガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成するナノバブル発生工程と、
を有することを特徴とする飽和ガス含有ナノバブル水の製造方法である。
The invention described in claim 1
A degassing step of degassing pure water to produce degassed pure water;
A gas dissolving step of pressurizing and dissolving a gas for dissolution in the degassed pure water to generate gas-saturated dissolved pure water;
A pressure control step for controlling the pressure of the gas for dissolution in the gas dissolution step;
Reducing the pressure of the gas-saturated dissolved pure water that has undergone the gas-dissolving step to generate saturated bubble-containing nanobubble water; and
It is a manufacturing method of the nano bubble water containing saturated gas characterized by having.
請求項２に記載の発明は、
前記脱気工程は、
膜を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、
前記膜を介して、脱気状態の空間に導きだすことを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention described in claim 2
The degassing step includes
By removing pure water on one side and degassing on the other side through the membrane, gas components in pure water are removed from the pure water,
It is led to the space of a deaeration state through the said film | membrane, It is a manufacturing method of saturated gas containing nano bubble water of Claim 1 characterized by the above-mentioned.
請求項３に記載の発明は、
前記ガス溶解工程は、
膜を介することにより一方に脱気純水を、他方に前記溶解目的のガスを導入して前記膜を介して前記溶解ガスが脱気純水に溶け込み、
前記脱気純水を飽和ガスの溶解純水にすることを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention according to claim 3
The gas dissolving step includes
Degassed pure water is introduced into one side through the membrane, and the gas for dissolution is introduced into the other, and the dissolved gas dissolves in the degassed pure water through the membrane,
The method for producing saturated gas-containing nanobubble water according to claim 1, wherein the degassed pure water is dissolved pure water of saturated gas.
請求項４に記載の発明は、
前記圧力制御工程は、
前記溶解目的のガスの圧力は、加圧されたガスではあるが、前記脱気純水の水圧、及び／又は前記飽和ガスの溶解純水の水圧よりも低い圧力にすることを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention according to claim 4
The pressure control step includes
The pressure of the gas for dissolution is a pressurized gas, but is set to a pressure lower than the water pressure of the degassed pure water and / or the water pressure of the dissolved pure water of the saturated gas. Item 8. A method for producing saturated gas-containing nanobubble water according to Item 1.
請求項５に記載の発明は、
前記ナノバブル発生工程は、
１ミクロン以下の空孔を経由して、前記ガス溶解工程を経た前記ガス飽和の溶解純水の圧力が減圧されることを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention described in claim 5
The nanobubble generation step includes
2. The method for producing saturated gas-containing nanobubble water according to claim 1, wherein the pressure of the gas-saturated dissolved pure water that has undergone the gas-dissolving step is reduced through pores of 1 micron or less. is there.
請求項６に記載の発明は、
前記ガス溶解工程と前記ナノバブル発生工程との間に、
１ミクロン以下の空孔を経由して、前記飽和ガスの溶解純水を整流する整流工程を有することを特徴とする請求項１乃至請求項５のいずれか１項に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention described in claim 6
Between the gas dissolution step and the nanobubble generation step,
6. The saturated gas-containing nanobubble water according to claim 1, further comprising a rectifying step of rectifying the dissolved pure water of the saturated gas through a pore of 1 micron or less. It is a manufacturing method.
請求項７に記載の発明は、
前記ガス溶解工程と前記ナノバブル発生工程との間に、
前記飽和ガスの溶解純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解ガスの圧力に近づけるように制御する水圧調整工程を有することを特徴とする請求項１乃至請求項６のいずれか１項に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention described in claim 7
Between the gas dissolution step and the nanobubble generation step,
7. The method according to claim 1, further comprising a water pressure adjustment step of controlling the pressure of the pure water of the saturated gas to be equal to or higher than the pressure of the gas to be dissolved and to be close to the pressure of the dissolved gas. The method for producing saturated gas-containing nanobubble water according to claim 1.
請求項８に記載の発明は、
前記ガス溶解工程の前段に、
前記脱気純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解目的のガスの圧力に近づけるように制御する水圧調整工程を有することを特徴とする請求項１乃至請求項６のいずれか１項に記載の飽和ガス含有ナノバブル水の製造方法である。
The invention according to claim 8 provides:
Before the gas dissolution step,
7. The water pressure adjusting step of controlling the pressure of the degassed pure water to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. The method for producing saturated gas-containing nanobubble water according to claim 1.
請求項９に記載の発明は、
純水を脱気して脱気純水を生成する脱気手段と、
前記脱気純水に溶解目的のガスを加圧し溶解してガス飽和の溶解純水を生成するガス溶解手段と、
前記溶解目的のガスの圧力を制御する圧力制御手段と、
前記ガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成するナノバブル発生手段と、
を有することを特徴とする飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 9 is:
A degassing means for degassing pure water to generate degassed pure water;
A gas dissolving means for pressurizing and dissolving a gas for dissolution in the degassed pure water to generate gas-saturated dissolved pure water;
Pressure control means for controlling the pressure of the gas for dissolution;
Nanobubble generating means for reducing the pressure of the gas-saturated dissolved pure water to generate saturated gas-containing nanobubble water;
It is a manufacturing apparatus of saturated gas containing nano bubble water characterized by having.
請求項１０に記載の発明は、
前記脱気手段は、
膜を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、
前記膜を介して、脱気状態の空間に導きだす構成であることを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 10 is:
The deaeration means includes
By removing pure water on one side and degassing on the other side through the membrane, gas components in pure water are removed from the pure water,
The apparatus for producing saturated gas-containing nanobubble water according to claim 9, wherein the apparatus is configured to lead to a deaerated space through the membrane.
請求項１１に記載の発明は、
前記ガス溶解手段は、
膜を介することにより一方に脱気純水を、他方に前記溶解ガスを導入して前記膜を介して前記溶解目的のガスが脱気純水に溶け込み、
前記脱気純水を飽和ガスの溶解純水にする構成であることを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 11
The gas dissolving means includes
The degassed pure water is introduced into one side through the membrane, the dissolved gas is introduced into the other, and the target gas dissolves into the degassed pure water through the membrane.
The apparatus for producing saturated gas-containing nanobubble water according to claim 9, wherein the degassed pure water is configured to be dissolved pure water of saturated gas.
請求項１２に記載の発明は、
前記圧力制御手段は、
前記溶解目的のガスの圧力は、加圧されたガスではあるが、前記脱気純水の水圧、及び／又は前記飽和ガスの溶解純水の水圧よりも低い圧力に制御することを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 12
The pressure control means includes
Although the pressure of the gas for dissolution is a pressurized gas, it is controlled to a pressure lower than the water pressure of the degassed pure water and / or the water pressure of the saturated pure water of the saturated gas. The apparatus for producing saturated gas-containing nanobubble water according to claim 9.
請求項１３に記載の発明は、
前記ナノバブル発生手段は、
１ミクロン以下の空孔を経由して、前記ガス飽和の溶解純水の圧力を減圧することを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 13
The nanobubble generating means includes
The apparatus for producing saturated gas-containing nanobubble water according to claim 9, wherein the pressure of the gas-saturated dissolved pure water is reduced through pores of 1 micron or less.
請求項１４に記載の発明は、
前記ガス溶解手段と前記ナノバブル発生手段との間に、
１ミクロン以下の空孔を経由して、前記飽和ガスの溶解純水を整流する整流手段を有することを特徴とする請求項９乃至請求項１３のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 14
Between the gas dissolving means and the nanobubble generating means,
The saturated gas-containing nanobubble water according to any one of claims 9 to 13, further comprising a rectifying means for rectifying the dissolved pure water of the saturated gas through pores of 1 micron or less. It is a manufacturing apparatus.
請求項１５に記載の発明は、
前記ガス溶解手段と前記ナノバブル発生手段との間に、
前記飽和ガスの溶解純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解目的のガスの圧力に近づけるように制御する水圧調整手段を有することを特徴とする請求項９乃至請求項１４のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention according to claim 15 is:
Between the gas dissolving means and the nanobubble generating means,
15. The water pressure adjusting means for controlling the pressure of the dissolved pure water of the saturated gas to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. The apparatus for producing saturated gas-containing nanobubble water according to any one of the above.
請求項１６に記載の発明は、
前記ガス溶解手段の前段に、
前記脱気純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解目的のガスの圧力に近づけるように制御する水圧調整手段を有することを特徴とする請求項９乃至請求項１４のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention described in claim 16
Before the gas dissolving means,
15. The water pressure adjusting means for controlling the pressure of the degassed pure water to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. The apparatus for producing saturated gas-containing nanobubble water according to claim 1.
請求項１７に記載の発明は、
前記飽和ガス含有ナノバブル水は、半導体、液晶をはじめとする電子産業分野に使用することを特徴とする請求項９乃至請求項１６のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置である。
The invention described in claim 17
The saturated gas-containing nanobubble water production apparatus according to any one of claims 9 to 16, wherein the saturated gas-containing nanobubble water is used in a field of an electronic industry including a semiconductor and a liquid crystal. is there.
前記構成により、この発明は、以下のような効果を有する。 With the above configuration, the present invention has the following effects.
請求項１及び請求項９に記載の発明では、純水を脱気して脱気純水を生成し、脱気純水に溶解目的のガスを加圧し溶解してガス飽和の溶解純水を生成し、溶解目的のガスの圧力を制御し、さらにガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成することで、パーテイクル除去の効果を得ることが可能で、かつ長期間にわたり連続的で、また常に安定なガス飽和ナノバブル水を得ることが可能である。 In the first and ninth aspects of the present invention, pure water is degassed to produce degassed pure water, and a gas for dissolution is pressurized and dissolved in the degassed pure water to obtain dissolved pure water with gas saturation. It is possible to obtain a particle removal effect by controlling the pressure of the gas to be generated and dissolving, and further reducing the pressure of the gas-saturated dissolved pure water to generate saturated gas-containing nanobubble water. It is possible to obtain gas-saturated nanobubble water that is continuous over time and always stable.
請求項２及び請求項１０に記載の発明では、膜を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、膜を介して、簡単な構造でかつ確実に脱気状態の空間に導きだすことができる。 In the inventions according to claim 2 and claim 10, pure water is removed from one side through the membrane and a gas component in the pure water is removed from the pure water by passing through the membrane. Therefore, it can be led to a deaerated space with a simple structure.
請求項３及び請求項１１に記載の発明では、膜を介することにより一方に脱気純水を、他方に溶解ガスを導入して膜を介して溶解目的のガスが脱気純水に溶け込み、簡単な構造でかつ確実に脱気純水を飽和ガスの溶解純水にすることができる。 In the invention according to claim 3 and claim 11, degassed pure water is introduced into one through the membrane, dissolved gas is introduced into the other, and the gas for dissolution is dissolved in the degassed pure water through the membrane, With a simple structure, the degassed pure water can be reliably converted into a saturated gas dissolved pure water.
請求項４及び請求項１２に記載の発明では、溶解目的のガスの圧力は、加圧されたガスではあるが、脱気純水の水圧、及び／又は飽和ガスの溶解純水の水圧よりも低い圧力にすることで、確実に脱気純水を飽和ガスの溶解純水にすることができる。 In the inventions according to claims 4 and 12, the pressure of the gas for dissolution is a pressurized gas, but it is higher than the water pressure of degassed pure water and / or the water pressure of dissolved pure water of saturated gas. By making the pressure low, the degassed pure water can be surely made into a dissolved pure water of saturated gas.
請求項５及び請求項１３に記載の発明では、１ミクロン以下の空孔を経由することで、ガス飽和の溶解純水の圧力が減圧され、飽和ガス含有ナノバブル水が発生する。 In the inventions according to claims 5 and 13, the pressure of the gas-saturated dissolved pure water is reduced by passing through pores of 1 micron or less, and saturated gas-containing nanobubble water is generated.
請求項６及び請求項１４に記載の発明では、ガス溶解とナノバブル発生との間で、１ミクロン以下の空孔を経由して、飽和ガスの溶解純水を整流することで、簡単かつ確実に飽和ガス含有ナノバブル水の製造することができる。 In the inventions according to claim 6 and claim 14, by straightening the dissolved pure water of the saturated gas via the pores of 1 micron or less between the gas dissolution and the generation of nanobubbles, it is easy and reliable. Saturated gas-containing nanobubble water can be produced.
請求項７及び請求項１５に記載の発明では、ガス溶解とナノバブル発生との間で、飽和ガスの溶解純水の圧力を溶解目的のガスの圧力以上で、溶解目的のガスの圧力に近づけるように制御することで、簡単かつ確実に飽和ガス含有ナノバブル水の製造することができる。 In the invention according to claim 7 and claim 15, between the gas dissolution and the generation of nanobubbles, the pressure of the pure water of the saturated gas is made higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. By controlling to, saturated gas-containing nanobubble water can be produced easily and reliably.
請求項８及び請求項１６に記載の発明では、ガス溶解の前段で、脱気純水の圧力を溶解目的のガスの圧力以上で、溶解目的のガスの圧力に近づけるように制御することで、簡単かつ確実に飽和ガス含有ナノバブル水の製造することができる。 In the invention according to claim 8 and claim 16, by controlling the pressure of degassed pure water to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution in the previous stage of gas dissolution, Saturated gas-containing nanobubble water can be produced easily and reliably.
請求項１７に記載の発明では、飽和ガス含有ナノバブル水は、半導体、液晶をはじめとする電子産業分野に使用することができる。 In the invention described in claim 17, the saturated gas-containing nanobubble water can be used in the electronic industry field including semiconductors and liquid crystals.
以下、この発明の飽和ガス含有ナノバブル水の製造方法及び飽和ガス含有ナノバブル水の製造装置の実施の形態について説明する。この発明の実施の形態は、発明の最も好ましい形態を示すものであり、この発明はこれに限定されない。
［第１の実施の形態］
図１は飽和ガス含有ナノバブル水の製造装置の一般的な概念図である。この第１の実施の形態では、脱気工程Ａ、ガス溶解工程Ｂ、圧力制御工程Ｃ、ナノバブル発生工程Ｄを有し、パーテイクルフリーでメタルフリーなナノバブル水を、より安定に製造し、半導体、液晶をはじめとする電子産業分野に使用可能な飽和ガス含有ナノバブル水を製造する。
Hereinafter, embodiments of the method for producing saturated gas-containing nanobubble water and the apparatus for producing saturated gas-containing nanobubble water according to the present invention will be described. The embodiment of the present invention shows the most preferable mode of the present invention, and the present invention is not limited to this.
[First Embodiment]
FIG. 1 is a general conceptual diagram of an apparatus for producing saturated gas-containing nanobubble water. In this first embodiment, there is a degassing step A, a gas dissolving step B, a pressure control step C, and a nanobubble generation step D, and a particle-free and metal-free nanobubble water is manufactured more stably. Produces nanobubble water containing saturated gas that can be used in the electronics industry including liquid crystals.
すなわち、純水は脱気工程Ａを経由して脱気され脱気純水となり、脱気純水はガス溶解工程Ｂにてガスが溶解され、ガス飽和の溶解純水となる。このガス溶解工程Ｂにおいては、溶解目的のガスが供給され、供給された溶解目的のガスには圧力制御工程Ｃにてガスの圧力は制御されている。また、圧力制御工程Ｃは脱気純水の水圧、及び／又は飽和純水の水圧よりも低い圧力であることが条件となっている。 That is, the pure water is degassed via the degassing step A to become degassed pure water, and the degassed pure water is dissolved in the gas in the gas dissolving step B to become gas saturated dissolved pure water. In the gas dissolution step B, a gas for dissolution is supplied, and the pressure of the gas is controlled in the pressure control step C for the supplied gas for dissolution. Moreover, the pressure control process C is required to be a pressure lower than the water pressure of degassed pure water and / or the water pressure of saturated pure water.
このようにして生成されたガス飽和の溶解純水は、ナノバブル発生工程Ｄにて減圧され、過飽和ガスがナノバブルとなった飽和ガス含有ナノバブル水として生成される。 The gas-saturated dissolved pure water produced in this way is decompressed in the nanobubble generation step D, and is produced as saturated gas-containing nanobubble water in which the supersaturated gas becomes nanobubbles.
（脱気工程Ａ）
この脱気工程Ａでは、脱気手段１０によって純水を脱気して脱気純水を生成する。脱気手段１０は、脱気ケース１１内に膜１２が配置され、さらに迷路１３を形成する堰板１４が配置されている。脱気ケース１１には、入口１５と出口１６が形成され、純水が入口１５から迷路１３を流れ、出口１６から脱気純水が排出される。脱気手段１０は、膜１２を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、膜１２を介して、脱気状態の空間１７に導きだす構成であり、純水を脱気して脱気純水を生成する。
(Deaeration process A)
In the deaeration step A, the deaeration unit 10 generates pure water by deaeration of pure water. In the deaeration means 10, a membrane 12 is disposed in a deaeration case 11, and a weir plate 14 that forms a maze 13 is further disposed. In the deaeration case 11, an inlet 15 and an outlet 16 are formed. Pure water flows through the maze 13 from the inlet 15, and degassed pure water is discharged from the outlet 16. The deaeration means 10 removes the pure water from the pure water by placing the pure water on one side through the membrane 12 and the deaerated state on the other side. In this configuration, the pure water is degassed to generate degassed pure water.
溶解させる目的のガス（例えば水素ガス、窒素ガス、酸素ガス、オゾンガス）があるときには、純水中にすでに溶解されているガスを一度除去することが必要であり、そのため脱気し、膜１２を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、膜１２を介して、簡単な構造でかつ確実に脱気状態の空間１７に導きだすことができる。 When there is a gas to be dissolved (for example, hydrogen gas, nitrogen gas, oxygen gas, ozone gas), it is necessary to remove the gas already dissolved in the pure water once. The pure water in one side and the deaerated state in the other are removed from the pure water by removing the gas component from the pure water. 17 can be led.
（ガス溶解工程Ｂ）
このガス溶解工程Ｂでは、ガス溶解手段２０によって脱気純水に溶解目的のガスを加圧し溶解してガス飽和の溶解純水を生成する。ガス溶解手段２０は、ガス溶解ケース２１内に膜２２が配置され、さらに迷路２３を形成する堰板２４が配置されている。ガス溶解ケース２１には、入口２５と出口２６が形成され、脱気純水が入口２５から迷路２３を流れ、出口２６から溶解純水が排出される。また、ガス溶解ケース２１には、溶解ガス入口２７と溶解ガス圧力制御口２８が形成されている。ガス溶解手段２０は、膜２２を介することにより一方に脱気純水を、他方に溶解目的のガスを溶解ガス入口２７から導入して膜２２を介して溶解目的のガスが脱気純水に溶け込み、脱気純水を飽和ガスの溶解純水にする構成であり、脱気純水に溶解目的のガスをガス制御口２８から制御して溶解してガス飽和の溶解純水を生成する。すなわち、溶解させる目的のガスの溶解であり、その際、膜２２を使用し、ガス圧より水圧を大きくすると、ガスが完全に純水に溶解し、この実施の形態では、一度ガスを純水に完全溶解させ、その後、細かい（１マイクロ以下）空孔を通して減圧することによりナノバブル水を生成する。
(Gas dissolution process B)
In this gas dissolution step B, the gas to be dissolved is pressurized and dissolved in the degassed pure water by the gas dissolving means 20 to generate dissolved gas pure water. In the gas dissolving means 20, a film 22 is arranged in a gas dissolving case 21, and a dam plate 24 that forms a maze 23 is further arranged. An inlet 25 and an outlet 26 are formed in the gas dissolution case 21, degassed pure water flows through the maze 23 from the inlet 25, and dissolved pure water is discharged from the outlet 26. The gas dissolution case 21 has a dissolved gas inlet 27 and a dissolved gas pressure control port 28 formed therein. The gas dissolving means 20 introduces degassed pure water into one side through the membrane 22, and introduces a gas to be dissolved into the other side from the dissolved gas inlet 27 through the membrane 22. The melted and degassed pure water is made into a saturated pure gas dissolved water, and the gas for dissolution is controlled and dissolved in the degassed pure water from the gas control port 28 to generate a gas saturated dissolved pure water. That is, dissolution of a gas to be dissolved. At this time, when the membrane 22 is used and the water pressure is made higher than the gas pressure, the gas is completely dissolved in pure water. In this embodiment, the gas is once purified water. Then, nanobubble water is generated by depressurizing through fine (less than 1 micron) pores.
（圧力制御工程Ｃ）
この圧力制御工程Ｃでは、圧力制御手段３０によってガス溶解工程Ｂにおいて溶解ガスの圧力を制御する。圧力制御手段３０は、第１の圧力センサ３１と第２の圧力センサ３２とを有し、第１の圧力センサ３１は溶解ガス制御口２８に接続され、第２の圧力センサ３２は出口２６に接続され、第１の圧力センサ３１と第２の圧力センサ３２とによって溶解ガスの圧力は、加圧されたガスではあるが、脱気純水の水圧、及び／又は飽和ガスの溶解純水の水圧よりも低い圧力になるように制御する。
(Pressure control process C)
In the pressure control step C, the pressure of the dissolved gas is controlled by the pressure control means 30 in the gas dissolving step B. The pressure control means 30 has a first pressure sensor 31 and a second pressure sensor 32, the first pressure sensor 31 is connected to the dissolved gas control port 28, and the second pressure sensor 32 is connected to the outlet 26. Although the pressure of the dissolved gas is a gas pressurized by the first pressure sensor 31 and the second pressure sensor 32, the water pressure of degassed pure water and / or the dissolved pure water of saturated gas is used. The pressure is controlled to be lower than the water pressure.
このように、溶解目的のガスを加圧するのは、加圧した分だけ（加圧されたガス量だけ）、純水を減圧したときにガスとして生成される。その量を制御するには加圧したガス圧力を制御すればよい。減圧してバブル生成されるが、通常の場合は、大きなバブル、小さくてもマイクロバブルであり、バブルを安定なナノバブルとして生成させるには細かい空孔を通すことが必要である。 As described above, the gas to be dissolved is pressurized as a gas when pure water is depressurized by an amount corresponding to the pressurized amount (amount of the pressurized gas). In order to control the amount, the pressurized gas pressure may be controlled. Bubbles are generated by depressurization, but in the normal case, they are large bubbles or microbubbles even if they are small. In order to generate bubbles as stable nanobubbles, it is necessary to pass fine holes.
ガス圧力を、脱気純水及び／またはガス飽和溶解純水よりも低くするのは、水にガスを完全に溶解させるためであり、ガスが水に溶解するとは、水分子（Ｈ２Ｏ）の分子と分子の間の空間に、ガスとして存在することを言い、どの程度溶解するかは、温度にも依存するが、大きくはガス圧力に依存し、例えばガス圧力が倍になると倍溶解する。 The reason why the gas pressure is lower than that of degassed pure water and / or gas saturated dissolved pure water is to completely dissolve the gas in water, and that the gas is dissolved in water means that water molecules (H 2 O) molecules. The amount of dissolution depends on the temperature, but largely depends on the gas pressure. For example, when the gas pressure doubles, it dissolves twice.
（ナノバブル発生工程Ｄ）
このナノバブル発生工程Ｄでは、ナノバブル発生手段４０によってガス溶解工程Ｂを経たガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成する。ナノバブル発生手段４０は、フィルタ４１を有し、このフィルタ４１の１ミクロン以下の空孔を経由して、ガス飽和の溶解純水の圧力を減圧し、ガス溶解工程Ｂを経たガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成する。このナノバブル発生手段４０の減圧構造は、フィルタ４１の１ミクロン以下の空孔を経由して、減圧されることを特徴とし、できれば０．５ミクロン以下の空孔を経由して減圧される。
(Nano bubble generation process D)
In the nanobubble generation step D, the nanobubble generation means 40 reduces the pressure of the gas-saturated dissolved pure water that has passed through the gas dissolution step B to generate saturated gas-containing nanobubble water. The nanobubble generating means 40 has a filter 41, and the pressure of the gas-saturated dissolved pure water is reduced through the pores of 1 micron or less of the filter 41, and the gas-saturated dissolved pure after the gas-dissolving step B is obtained. The water pressure is reduced to produce saturated gas-containing nanobubble water. The pressure reducing structure of the nanobubble generating means 40 is characterized in that the pressure is reduced via the pores of 1 micron or less of the filter 41, and the pressure is reduced via the pores of 0.5 micron or less if possible.
［第２の実施の形態］
図２は飽和ガス含有ナノバブル水製造装置で整流工程、水圧調整工程を経由した概念図である。この第２の実施の形態では、第１の実施の形態と同様に、脱気工程Ａ、ガス溶解工程Ｂ、圧力制御工程Ｃ、ナノバブル発生工程Ｄを有し、さらに整流工程Ｅ、水圧調整工程Ｆを有する。
[Second Embodiment]
FIG. 2 is a conceptual diagram through a rectification process and a water pressure adjustment process in a saturated gas-containing nanobubble water production apparatus. In the second embodiment, similarly to the first embodiment, there are a deaeration process A, a gas dissolution process B, a pressure control process C, a nanobubble generation process D, and a rectification process E and a water pressure adjustment process. F.
この第２の実施の形態では、さらに安定な飽和ガス含有ナノバブル水を生成するために、図１の実施の形態に対して、ガス飽和の溶解純水を整流工程Ｅに導き、整流して整流純水を生成した後、水圧調整工程Ｆにて前もって純水の水圧を調整し水圧調整純水とした後、ナノバブル発生工程Ｄにて減圧され、過飽和ガスがナノバブルとなった飽和ガス含有ナノバブル水として生成される。 In the second embodiment, in order to generate a more stable saturated gas-containing nanobubble water, compared with the embodiment of FIG. After producing pure water, after adjusting the water pressure of the pure water in the water pressure adjusting step F to obtain water pressure adjusted pure water, the pressure is reduced in the nano bubble generating step D, and the saturated gas-containing nano bubble water in which the supersaturated gas becomes nano bubbles. Is generated as
（整流工程Ｅ）
この整流工程Ｅは、ガス溶解工程Ｂとナノバブル発生工程Ｄとの間に有し、整流手段５０によって１ミクロン以下の空孔を経由して、飽和ガスの溶解純水を整流する。純水が加圧されている状態では、溶解されたガスはバブルとはなっていないため、ナノバブル発生工程で均一にナノバブルを発生させるためには、その前で整流することで、容易にかつ確実に均一なナノバブルが生成できるようになる。
（水圧調整工程Ｆ）
この水圧調整工程Ｆは、ガス溶解工程Ｂとナノバブル発生工程Ｄとの間に有し、水圧調整手段６０によって飽和ガスの溶解純水の圧力を溶解目的のガスの圧力以上で、溶解目的のガスの圧力に近づけるように制御する。この水圧調整手段６０には、圧力センサ６１を用いて制御している。
(Rectification process E)
This rectification process E is provided between the gas dissolution process B and the nanobubble generation process D, and rectifies the dissolved pure water of the saturated gas via the pores of 1 micron or less by the rectification means 50. In the state where pure water is pressurized, the dissolved gas is not a bubble. Therefore, in order to generate nanobubbles uniformly in the nanobubble generation process, rectification is performed easily and surely before that. Uniform nanobubbles can be generated.
(Water pressure adjustment process F)
This water pressure adjusting step F is provided between the gas dissolving step B and the nanobubble generating step D, and the water pressure adjusting means 60 causes the pressure of the pure water of the saturated gas to be equal to or higher than the pressure of the dissolving target gas. The pressure is controlled to be close to the pressure. The water pressure adjusting means 60 is controlled using a pressure sensor 61.
また、水圧調整工程Ｆは、ガス溶解工程Ｂの前段に、水圧調整手段を設けることによって脱気純水及び／又は飽和ガス溶解純粋の圧力を溶解目的のガスの圧力以上で、溶解目的のガスの圧力に近づけるように制御するようにしてもよい。
（飽和ガス含有ナノバブル水）
製造された飽和ガス含有ナノバブル水は、半導体、液晶をはじめとする電子産業分野に使用することができる。この飽和ガス含有ナノバブル水は、直径が１μｍ（ １マイクロメートル：１００万分の１メートル）以下の超微細な気泡を含有した水であり、従って、直径１μｍ以上のマイクロバブルの気泡も含有している。
Further, the water pressure adjusting step F is provided with a water pressure adjusting means before the gas dissolving step B so that the pressure of the degassed pure water and / or the saturated gas dissolving pure is higher than the pressure of the dissolving target gas. You may make it control so that it may approach the pressure of this.
(Saturated gas-containing nanobubble water)
The produced saturated gas-containing nanobubble water can be used in the electronic industry field including semiconductors and liquid crystals. This saturated gas-containing nanobubble water is water containing ultrafine bubbles having a diameter of 1 μm (1 micrometer: one millionth of a meter) or less, and therefore also contains microbubbles having a diameter of 1 μm or more. .
飽和ガス含有ナノバブル水は、同体積を有する単一の気泡に比べて大きな比表面積を有し、また水中への気体の溶解や液中の不純物の吸着、科学的な触媒効果が大きく、また浮力が殆ど効かないため液中に滞在する時間が長いなどの特徴を有している。 Saturated gas-containing nanobubble water has a large specific surface area compared to a single bubble with the same volume, and it has a high solubility of gas in water, adsorption of impurities in the liquid, scientific catalytic effect, and buoyancy. Has a feature such as a long time for staying in the liquid because it is hardly effective.
また、ナノバブルは、直径１００ｎｍ程度の気泡は気液界面の表面張力により、気泡内部の圧力が３０気圧程度まで増加しており、また気泡表面は活性が高く、汚れ成分を界面に吸着させる。また、１００ｎｍ程度の気泡は数ｍｍ程度の気泡と比べ、同じ体積に比べ表面積が数万倍大きい、さらに分子動力学の解析結果より、数ｎｍの気泡では気液界面の極性が揃うなどの特徴を有している。 Nanobubbles have a diameter of about 100 nm and the pressure inside the bubbles is increased to about 30 atm due to the surface tension of the gas-liquid interface, and the surface of the bubbles is highly active and adsorbs dirt components to the interface. In addition, bubbles of about 100 nm have a surface area that is tens of thousands of times larger than bubbles of about several mm compared to bubbles of about several millimeters, and molecular dynamics analysis results show that the polarity of the gas-liquid interface is uniform for bubbles of several nm. have.
したがって、飽和ガス含有ナノバブル水は、ナノバブルが物体に接触する際に破壊すると数十気圧のジェットが生じし、浄化速度が大きく、物体表面の洗浄効果があり、さらに静電気による殺菌効果を有する。 Therefore, saturated gas-containing nanobubble water generates a jet of several tens of atmospheres when broken when nanobubbles come into contact with an object, has a high purification rate, has a cleaning effect on the surface of the object, and has a sterilizing effect due to static electricity.
このように、飽和ガス含有ナノバブル水の生成方法は、 ポンプ等で水圧をかけ、ガス圧をかけて溶解させた後、変圧して生成し、生成したガス溶解水を整流手段（フィルター）を経由して均一なガス溶解ナノバブル水のみ取り出す。 In this way, the method for producing saturated gas-containing nanobubble water is to apply water pressure with a pump, etc., dissolve it by applying gas pressure, transform it, and generate the gas dissolved water through a rectifier (filter). Then, only uniform gas-dissolved nanobubble water is taken out.
そして、特に半導体の洗浄に用いる飽和ガス含有ナノバブル水に必要な条件、例えばパーテイクルフリーであること、メタルフリーであること、溶解目的のガスが既知のガスであり、ガス量が制御できること、ノズルから連続的に供給できること、常に一定のパーテイクル除去性能があることなどを有する。 And especially the conditions necessary for saturated gas-containing nanobubble water used for semiconductor cleaning, such as particle-free, metal-free, the gas for dissolution is a known gas, the amount of gas can be controlled, nozzle In that it can be continuously supplied, and always has a certain particle removal performance.
したがって、飽和ガス含有ナノバブル水は、洗浄においては、主として破壊時の数十気圧といわれるジェットによるため、ナノバブルが被洗浄物上において、均一に供給され、破壊することができる。 Therefore, since the saturated bubble-containing nanobubble water is mainly due to a jet that is said to be several tens of atmospheres at the time of destruction, the nanobubbles can be uniformly supplied and destroyed on the object to be cleaned.
次に、この発明に係わる飽和ガス含有ナノバブル水製造装置の実施例を記載するが、この実施例はこの発明を限定するものではない。 Next, although the Example of the saturated gas containing nano bubble water manufacturing apparatus concerning this invention is described, this Example does not limit this invention.
（実施例１）
水圧２５０ｋＰａで飽和ガス含有ナノバブル水の生成を行った。
Example 1
Saturated gas-containing nanobubble water was generated at a water pressure of 250 kPa.
溶解目的のガスを窒素ガスとし、５０ｋＰａの圧力で制御を行い、ナノバブル発生工程での空孔は０．５ミクロンのフィルタを用いた。 Nitrogen gas was used as the gas for dissolution, and control was performed at a pressure of 50 kPa, and a 0.5 micron filter was used for the holes in the nanobubble generation process.
生成したナノバブル水の発生バブルを測定したところ、０．１〜０．５ミクロンの粒径で２４００個、０．５ミクロン以上が３０個測定された。 When the generated bubbles of the nanobubble water were measured, 2400 particles having a particle diameter of 0.1 to 0.5 microns and 30 particles of 0.5 microns or more were measured.
（比較例１）
水圧２５０ｋＰａで飽和ガス含有ナノバブル水の生成を行った。
溶解目的のガスを窒素ガスとし、５０ｋＰａで圧力を制御し、実施例１と同じ条件とした。ナノバブル発生工程での空孔は１０ミクロンのフィルタを使用した。
生成したナノバブル水の粒径は、０．１〜０．５ミクロンの粒径で１１００個測定されたが、０．５ミクロン以上が４７５０個測定された。実施例１はナノバブルが生成されていたにもかかわらず、比較例１ではナノバブルのほか、多くのマイクロバブルが生成され、どちらかといえばマイクロバブル生成となった。
(Comparative Example 1)
Saturated gas-containing nanobubble water was generated at a water pressure of 250 kPa.
The gas for dissolution was nitrogen gas, the pressure was controlled at 50 kPa, and the conditions were the same as in Example 1. A 10 micron filter was used for the holes in the nanobubble generation process.
The particle size of the produced nanobubble water was measured at 1100 particles having a particle size of 0.1 to 0.5 microns, but 4750 particles at 0.5 microns or more were measured. In Example 1, although nanobubbles were generated, in Comparative Example 1, many microbubbles were generated in addition to nanobubbles. If anything, microbubbles were generated.
（実施例２）
水圧２５０ｋＰａで飽和ガス含有ナノバブル水の生成を行った。
(Example 2)
Saturated gas-containing nanobubble water was generated at a water pressure of 250 kPa.
溶解目的のガスを酸素ガスとし、５０ｋＰａの圧力で制御をおこない、ナノバブル発生工程での空孔は０．５ミクロンのフィルタを用いた。 The gas for dissolution was oxygen gas, and control was performed at a pressure of 50 kPa, and a 0.5 micron filter was used for the holes in the nanobubble generation process.
生成したナノバブル水の発生バブルを測定したところ、０．１〜０．５ミクロンの粒径で３９００個、０．５ミクロン以上が５０個測定された。 When the generated bubbles of the nanobubble water were measured, 3900 particles having a particle diameter of 0.1 to 0.5 microns and 50 particles of 0.5 microns or more were measured.
（比較例２）
水圧２５０ｋＰａで飽和ガス含有ナノバブル水の生成を行った。
(Comparative Example 2)
Saturated gas-containing nanobubble water was generated at a water pressure of 250 kPa.
溶解目的のガスを酸素ガスとし、５０ｋＰａで圧力を制御し、実施例２と同じ条件とした。ナノバブル発生工程での空孔は１０ミクロンのフィルタを使用した。
生成したナノバブル水の粒径は、０．１〜０．５ミクロンの粒径で１３７０個測定されたが、０．５ミクロン以上が３８３０個測定された。実施例２はナノバブルが生成されていたにもかかわらず、比較例２ではナノバブルのほか、多くのマイクロバブルが生成され、どちらかといえばマイクロバブル生成となった。
The gas for dissolution was oxygen gas, the pressure was controlled at 50 kPa, and the conditions were the same as in Example 2. A 10 micron filter was used for the holes in the nanobubble generation process.
The generated nanobubble water had a particle size of 0.170 with a particle size of 0.1 to 0.5 microns, but 3830 with a particle size of 0.5 microns or more were measured. In Example 2, although nanobubbles were generated, in Comparative Example 2, many microbubbles were generated in addition to nanobubbles. If anything, microbubbles were generated.
（実施例３）
水圧２５０ｋＰａで飽和ガス含有ナノバブル水の生成を行った。
(Example 3)
Saturated gas-containing nanobubble water was generated at a water pressure of 250 kPa.
溶解目的のガスを酸素ガスとし、１００ｋＰａの圧力で制御を行った。 The gas for dissolution was oxygen gas, and control was performed at a pressure of 100 kPa.
また、ナノバブル発生工程は、バルブを用いた。 Moreover, the nano bubble generation process used a valve.
水圧調整工程の優位性を確認するため、水圧調整を行い１２０ｋＰａにしたうえで、ナノバブル発生工程に導いた。 In order to confirm the superiority of the water pressure adjustment process, the water pressure was adjusted to 120 kPa and then led to the nanobubble generation process.
生成したナノバブル水の発生バブルを測定したところ、０．１〜０．５ミクロンの粒径で２８６０個、０．５ミクロン以上が５８８０個測定された。 When the generated bubbles of the nanobubble water were measured, 2860 particles having a particle diameter of 0.1 to 0.5 microns and 5880 particles having a size of 0.5 microns or more were measured.
（比較例３）
水圧２５０ｋＰａで飽和ガス含有ナノバブル水の生成を行った。
(Comparative Example 3)
Saturated gas-containing nanobubble water was generated at a water pressure of 250 kPa.
溶解目的のガスを酸素ガスとし、１００ｋＰａの圧力で制御を行った。 The gas for dissolution was oxygen gas, and control was performed at a pressure of 100 kPa.
また、ナノバブル発生工程は、バルブを用い、実施例３と同じ条件とした。
水圧調整工程は設置せず、水圧は２５０ｋＰａのまま、ナノバブル発生工程に導いた。
ナノバブル生成工程でバルブを使用したが、バルブを使用するとナノバブルが多く生成されることが分かっている。しかしながら、生成したナノバブル水の粒径は、０．１〜０．５ミクロンの粒径で１８００個、０．５ミクロン以上が３８００個測定された。実施例３に比べ、発生ナノバブル、マイクロバブルともに減少した。このことより、水圧調整手段の優位性が推測される。
The nanobubble generation step was performed under the same conditions as in Example 3 using a valve.
The water pressure adjustment process was not installed, and the water pressure remained at 250 kPa, leading to the nanobubble generation process.
Although a valve was used in the nanobubble generation process, it has been found that a large number of nanobubbles are generated when the valve is used. However, the particle size of the generated nanobubble water was 1800 with a particle size of 0.1 to 0.5 microns, and 3800 particles with a size of 0.5 microns or more were measured. Compared to Example 3, both generated nanobubbles and microbubbles decreased. From this, the superiority of the water pressure adjusting means is presumed.
この発明は、ガス溶解した純水からナノバブル水を生成する飽和ガス含有ナノバブル水の製造方法、および、飽和ガス含有ナノバブル水の製造装置に適用可能であり、パーテイクルフリーでメタルフリーなナノバブル水を、より安定に製造し、又、ナノバブル量を制御することにより、半導体、液晶をはじめとする電子産業分野に使用可能である。 The present invention can be applied to a saturated gas-containing nanobubble water production method for generating nanobubble water from gas-dissolved pure water and a saturated gas-containing nanobubble water production apparatus. It can be manufactured more stably and can be used in the electronic industry field including semiconductors and liquid crystals by controlling the amount of nanobubbles.
Ａ 脱気工程
Ｂ ガス溶解工程
Ｃ 圧力制御工程
Ｄ ナノバブル発生工程
Ｅ 整流工程
Ｆ 水圧調整工程
１０ 脱気手段
１１ 脱気ケース
１２ 膜
１３ 迷路
１４ 堰板
１５ 入口
１６ 出口
２０ ガス溶解手段
２１ ガス溶解ケース
２２ 膜
２３ 迷路
２４ 堰板
２５ 入口
２６ 出口
２７ 溶解ガス入口
２８ 溶解ガス圧力制御口
３０ 圧力制御手段
３１ 第１の圧力センサ
３２ 第２の圧力センサ
４０ ナノバブル発生手段
４１ フィルタ
５０ 整流手段
６０ 水圧調整手段
６１ 圧力センサ
A Deaeration process B Gas dissolution process C Pressure control process D Nano bubble generation process E Rectification process F Water pressure adjustment process 10 Deaeration means 11 Deaeration case 12 Membrane 13 Maze 14 Dam plate 15 Inlet 16 Outlet 20 Gas dissolution means 21 Gas dissolution case DESCRIPTION OF SYMBOLS 22 Membrane 23 Maze 24 Dam plate 25 Inlet 26 Outlet 27 Dissolved gas inlet 28 Dissolved gas pressure control port 30 Pressure control means 31 1st pressure sensor 32 2nd pressure sensor 40 Nano bubble generation means 41 Filter 50 Rectification means 60 Water pressure adjustment means 61 Pressure sensor
Claims (17)
前記脱気純水に溶解目的のガスを加圧し溶解してガス飽和の溶解純水を生成するガス溶解工程と、
前記ガス溶解工程において前記溶解目的のガスの圧力を制御する圧力制御工程と、
前記ガス溶解工程を経た前記ガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成するナノバブル発生工程と、
を有することを特徴とする飽和ガス含有ナノバブル水の製造方法。 A degassing step of degassing pure water to produce degassed pure water;
A gas dissolving step of pressurizing and dissolving a gas for dissolution in the degassed pure water to generate gas-saturated dissolved pure water;
A pressure control step for controlling the pressure of the gas for dissolution in the gas dissolution step;
Reducing the pressure of the gas-saturated dissolved pure water that has undergone the gas-dissolving step to generate saturated bubble-containing nanobubble water; and
A method for producing saturated gas-containing nanobubble water, comprising:
膜を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、
前記膜を介して、脱気状態の空間に導きだすことを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法。 The degassing step includes
By removing pure water on one side and degassing on the other side through the membrane, gas components in pure water are removed from the pure water,
2. The method for producing saturated gas-containing nanobubble water according to claim 1, wherein the saturated gas-containing nanobubble water is led to a degassed space through the membrane.
膜を介することにより一方に脱気純水を、他方に前記溶解目的のガスを導入して前記膜を介して前記溶解ガスが脱気純水に溶け込み、
前記脱気純水を飽和ガスの溶解純水にすることを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法。 The gas dissolving step includes
Degassed pure water is introduced into one side through the membrane, and the gas for dissolution is introduced into the other, and the dissolved gas dissolves in the degassed pure water through the membrane,
The method for producing nanobubble water containing saturated gas according to claim 1, wherein the degassed pure water is dissolved pure water of saturated gas.
前記溶解目的のガスの圧力は、加圧されたガスではあるが、前記脱気純水の水圧、及び／又は前記飽和ガスの溶解純水の水圧よりも低い圧力にすることを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法。 The pressure control step includes
The pressure of the gas for dissolution is a pressurized gas, but is set to a pressure lower than the water pressure of the degassed pure water and / or the water pressure of the dissolved pure water of the saturated gas. Item 2. A method for producing saturated gas-containing nanobubble water according to Item 1.
１ミクロン以下の空孔を経由して、前記ガス溶解工程を経た前記ガス飽和の溶解純水の圧力が減圧されることを特徴とする請求項１に記載の飽和ガス含有ナノバブル水の製造方法。 The nanobubble generation step includes
2. The method for producing saturated gas-containing nanobubble water according to claim 1, wherein the pressure of the gas-saturated dissolved pure water that has undergone the gas-dissolving step is reduced via pores of 1 micron or less.
１ミクロン以下の空孔を経由して、前記飽和ガスの溶解純水を整流する整流工程を有することを特徴とする請求項１乃至請求項５のいずれか１項に記載の飽和ガス含有ナノバブル水の製造方法。 Between the gas dissolution step and the nanobubble generation step,
6. The saturated gas-containing nanobubble water according to claim 1, further comprising a rectifying step of rectifying the dissolved pure water of the saturated gas through a pore of 1 micron or less. Manufacturing method.
前記飽和ガスの溶解純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解ガスの圧力に近づけるように制御する水圧調整工程を有することを特徴とする請求項１乃至請求項６のいずれか１項に記載の飽和ガス含有ナノバブル水の製造方法。 Between the gas dissolution step and the nanobubble generation step,
7. The method according to claim 1, further comprising a water pressure adjustment step of controlling the pressure of the pure water of the saturated gas to be equal to or higher than the pressure of the gas to be dissolved and to be close to the pressure of the dissolved gas. The method for producing nanobubble water containing saturated gas according to claim 1.
前記脱気純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解目的のガスの圧力に近づけるように制御する水圧調整工程を有することを特徴とする請求項１乃至請求項６のいずれか１項に記載の飽和ガス含有ナノバブル水の製造方法。 Before the gas dissolution step,
7. The water pressure adjusting step of controlling the pressure of the degassed pure water to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. The method for producing nanobubble water containing saturated gas according to claim 1.
前記脱気純水に溶解目的のガスを加圧し溶解してガス飽和の溶解純水を生成するガス溶解手段と、 前記溶解目的のガスの圧力を制御する圧力制御手段と、
前記ガス飽和の溶解純水の圧力を減圧して飽和ガス含有ナノバブル水を生成するナノバブル発生手段と、
を有することを特徴とする飽和ガス含有ナノバブル水の製造装置。 A degassing means for degassing pure water to generate degassed pure water;
A gas dissolving means for generating a gas-saturated dissolved pure water by pressurizing and dissolving a gas for dissolution in the degassed pure water, and a pressure control means for controlling the pressure of the gas for dissolution.
Nanobubble generating means for reducing the pressure of the gas-saturated dissolved pure water to generate saturated gas-containing nanobubble water;
A device for producing saturated gas-containing nanobubble water, comprising:
膜を介することにより一方に純水を、他方に脱気状態にすることにより、純水中の気体成分を純水より除去し、
前記膜を介して、脱気状態の空間に導きだす構成であることを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置。 The deaeration means includes
By removing pure water on one side and degassing on the other side through the membrane, gas components in pure water are removed from the pure water,
The apparatus for producing saturated gas-containing nanobubble water according to claim 9, wherein the apparatus is configured to lead to a deaerated space through the membrane.
膜を介することにより一方に脱気純水を、他方に前記溶解ガスを導入して前記膜を介して前記溶解目的のガスが脱気純水に溶け込み、
前記脱気純水を飽和ガスの溶解純水にする構成であることを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置。 The gas dissolving means includes
The degassed pure water is introduced into one side through the membrane, the dissolved gas is introduced into the other, and the target gas dissolves into the degassed pure water through the membrane.
The apparatus for producing saturated gas-containing nanobubble water according to claim 9, wherein the degassed pure water is configured to be a saturated gas-dissolved pure water.
前記溶解目的のガスの圧力は、加圧されたガスではあるが、前記脱気純水の水圧、及び／又は前記飽和ガスの溶解純水の水圧よりも低い圧力に制御することを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置。 The pressure control means includes
Although the pressure of the gas for dissolution is a pressurized gas, it is controlled to a pressure lower than the water pressure of the degassed pure water and / or the water pressure of the saturated pure water of the saturated gas. The apparatus for producing saturated gas-containing nanobubble water according to claim 9.
１ミクロン以下の空孔を経由して、前記ガス飽和の溶解純水の圧力を減圧することを特徴とする請求項９に記載の飽和ガス含有ナノバブル水の製造装置。 The nanobubble generating means includes
The apparatus for producing saturated gas-containing nanobubble water according to claim 9, wherein the pressure of the gas-saturated dissolved pure water is reduced through a pore of 1 micron or less.
１ミクロン以下の空孔を経由して、前記飽和ガスの溶解純水を整流する整流手段を有することを特徴とする請求項９乃至請求項１３のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置。 Between the gas dissolving means and the nanobubble generating means,
The saturated gas-containing nanobubble water according to any one of claims 9 to 13, further comprising a rectifying means for rectifying the dissolved pure water of the saturated gas through pores of 1 micron or less. Manufacturing equipment.
前記飽和ガスの溶解純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解目的のガスの圧力に近づけるように制御する水圧調整手段を有することを特徴とする請求項９乃至請求項１４のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置。 Between the gas dissolving means and the nanobubble generating means,
15. The water pressure adjusting means for controlling the pressure of the dissolved pure water of the saturated gas to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. The apparatus for producing saturated gas-containing nanobubble water according to any one of the above.
前記脱気純水の圧力を前記溶解目的のガスの圧力以上で、前記溶解目的のガスの圧力に近づけるように制御する水圧調整手段を有することを特徴とする請求項９乃至請求項１４のいずれか１項に記載の飽和ガス含有ナノバブル水の製造装置。 Before the gas dissolving means,
15. The water pressure adjusting means for controlling the pressure of the degassed pure water to be equal to or higher than the pressure of the gas for dissolution and close to the pressure of the gas for dissolution. The apparatus for producing nanobubble water containing saturated gas according to claim 1.
The apparatus for producing saturated gas-containing nanobubble water according to any one of claims 9 to 16, wherein the saturated gas-containing nanobubble water is used in a field of an electronic industry including a semiconductor and a liquid crystal.
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| US10219670B2 (en) | 2014-09-05 | 2019-03-05 | Tennant Company | Systems and methods for supplying treatment liquids having nanobubbles |
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| JPS62148662A (en) * | 1985-12-23 | 1987-07-02 | 松下電工株式会社 | Nozzle for generating air bubbles |
| JPH07328313A (en) * | 1994-06-07 | 1995-12-19 | Agency Of Ind Science & Technol | Dissolved gas removing and gas dissolving apparatus |
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Cited By (2)
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| JP2013158676A (en) * | 2012-02-03 | 2013-08-19 | Core Technology:Kk | Method for producing saturated gas-containing nano-bubble water |
| US10219670B2 (en) | 2014-09-05 | 2019-03-05 | Tennant Company | Systems and methods for supplying treatment liquids having nanobubbles |
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| JP5617081B2 (en) | 2014-11-05 |
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