JPH04341796A - Manufacture of thin film electroluminescent element - Google Patents
Manufacture of thin film electroluminescent elementInfo
- Publication number
- JPH04341796A JPH04341796A JP3113602A JP11360291A JPH04341796A JP H04341796 A JPH04341796 A JP H04341796A JP 3113602 A JP3113602 A JP 3113602A JP 11360291 A JP11360291 A JP 11360291A JP H04341796 A JPH04341796 A JP H04341796A
- Authority
- JP
- Japan
- Prior art keywords
- zns
- thin film
- film
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 31
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011572 manganese Substances 0.000 claims description 15
- 239000005083 Zinc sulfide Substances 0.000 claims description 13
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical group [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical group [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 16
- 229910052771 Terbium Inorganic materials 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- 239000008188 pellet Substances 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 11
- 230000005684 electric field Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、交流電界の印加により
エレクトロルミネセンス （Ｅｌｅｃｔｒｏ Ｌｕｍｉ
ｎｅｓｃｅｎｃｅ， 以下ＥＬと略す） 発光を呈する
薄膜ＥＬ素子の製造方法に関する。[Industrial Application Field] The present invention provides electroluminescence by applying an alternating current electric field.
The present invention relates to a method of manufacturing a thin film EL element that emits light (hereinafter abbreviated as EL).
【０００２】0002
【従来の技術】最近、高解像度および大容量表示が可能
な平面型表示素子として全固体素子である薄膜ＥＬ素子
が注目されている。ＥＬは、発光の励起過程の相違によ
って真性ＥＬと注入型ＥＬに分けられる。このうち真性
ＥＬは、螢光体結晶中のキャリアが高電界によって加速
され、これが発光中心を衝突励起し、励起準位に上げら
れた電子が基底状態に戻るときに発光する現象を利用し
たものである。2. Description of the Related Art Recently, thin film EL devices, which are all-solid-state devices, have attracted attention as flat display devices capable of high resolution and large capacity display. EL is divided into intrinsic EL and injection type EL, depending on the difference in the excitation process of light emission. Among these, intrinsic EL utilizes the phenomenon that carriers in a phosphor crystal are accelerated by a high electric field, which collide and excite a luminescent center, and the electrons raised to an excited level emit light when they return to the ground state. It is.
【０００３】図１は真性ＥＬ素子を示し、この薄膜ＥＬ
素子は、ガラス基板１上に透明電極２、絶縁層３， ５
、発光層４、裏面電極６を積層した２重絶縁構造を持っ
ている。この中で、発光層４は硫化亜鉛 （ＺｎＳ），
硫化ストロンチウム （ＳｒＳ），硫化カルシウム （
ＣａＳ） 等のＩＩ−ＶＩ族化合物を母体とし、その中
に少量の発光中心を添加したもので構成されている。発
光層４は、発光中心となるＭｎ， Ｔｂ， Ｓｍ等の元
素を０．１ 〜４原子％という濃度範囲で含有し、しか
も高い結晶性を有する必要がある。従来より、このよう
な薄膜ＥＬ素子の発光層を成膜する方法として、蒸着法
，スパッタ法， ＣＶＤ法が検討されている。この素子
は、駆動電源７により、透明電極２と裏面電極６の間に
交流電界を印加することにより、発光中心に応じた色を
発する。FIG. 1 shows an intrinsic EL device, and this thin film EL device
The element includes a transparent electrode 2 and insulating layers 3 and 5 on a glass substrate 1.
, a light emitting layer 4, and a back electrode 6 are stacked to form a double insulation structure. Among these, the light emitting layer 4 is made of zinc sulfide (ZnS),
Strontium sulfide (SrS), calcium sulfide (
It is composed of a II-VI group compound such as CaS) as a matrix and a small amount of luminescent center added therein. The light-emitting layer 4 must contain elements such as Mn, Tb, and Sm, which serve as luminescence centers, in a concentration range of 0.1 to 4 atomic percent, and must have high crystallinity. Conventionally, vapor deposition, sputtering, and CVD methods have been studied as methods for forming the light-emitting layer of such thin-film EL devices. This element emits a color depending on the emission center by applying an alternating current electric field between the transparent electrode 2 and the back electrode 6 using the driving power source 7.
【０００４】0004
【発明が解決しようとする課題】上記の従来の発光層成
膜法を用いて多色発光薄膜ＥＬ素子を製造するには、母
体となるＩＩ−ＶＩ族化合物と発光中心材料とを同時に
成膜し、発光層を作製する方法である。そのためにカラ
ー表示素子を作製する際には、発光色に対応して異なる
領域に発光中心を有する膜を形成する必要があるため、
それぞれ異なる発光中心を添加した化合物による複数個
の成膜およびホトプロセスが必要であった。[Problem to be Solved by the Invention] In order to manufacture a multicolor light-emitting thin film EL device using the above-mentioned conventional light-emitting layer deposition method, it is necessary to simultaneously deposit a II-VI group compound as a matrix and a luminescent center material. This is a method for producing a light-emitting layer. For this reason, when producing a color display element, it is necessary to form a film that has luminescent centers in different regions depending on the luminescent color.
Multiple film formations and photoprocesses were required, each using a compound doped with a different luminescent center.
【０００５】本発明の目的は、１回の成膜で多色発光可
能の薄膜ＥＬ素子を製造する方法を提供することにある
。An object of the present invention is to provide a method for manufacturing a thin film EL device capable of emitting multicolor light by one film formation.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明は螢光体母体材料に発光中心となる元素を
添加してなる発光層の両面に絶縁層を介して電極を備え
た薄膜ＥＬ素子の製造方法において、螢光体母体材料を
成膜後、複数種類の発光中心となる元素をそれぞれその
膜の所定の領域にイオン注入により混入するものとする
。そして、螢光体母体材料がＩＩ−ＶＩ族化合物であり
、またそのＩＩ−ＶＩ族化合物がＺｎＳであって、発光
中心となる元素がマンガン （Ｍｎ），トリビウム （
Ｔｂ），あるいはサマリウム （Ｓｍ） であることが
有効である。[Means for Solving the Problems] In order to achieve the above object, the present invention provides a luminescent layer formed by adding an element serving as a luminescent center to a phosphor matrix material, and electrodes are provided on both sides of the luminescent layer via an insulating layer. In the method for manufacturing a thin film EL device, after a phosphor matrix material is formed into a film, a plurality of types of elements serving as emission centers are mixed into predetermined regions of the film by ion implantation. The phosphor matrix material is a II-VI group compound, and the II-VI group compound is ZnS, and the elements serving as the luminescent center are manganese (Mn), tribium (
Tb) or samarium (Sm) are effective.
【０００７】[0007]
【作用】螢光体母体材料を成膜後、発光中心となる元素
をイオン注入で混入するため、異なる種類の発光中心を
所定の領域に導入することが容易であり、成膜作業は一
回だけの簡単なプロセスで各領域が注入された元素によ
って決まる色に発光する多色発光表示用の薄膜ＥＬ素子
を製造することができる。[Operation] After forming a film of the phosphor matrix material, the element that becomes the luminescent center is mixed in by ion implantation, so it is easy to introduce different types of luminescent centers into a predetermined area, and the film formation process is done only once. A thin film EL device for multicolor light emitting display, in which each region emits light in a color determined by the implanted element, can be manufactured through a simple process.
【０００８】[0008]
【実施例】図１の構造を有する３色表示用薄膜ＥＬ素子
に対する本発明の一実施例について述べる。まず、ガラ
ス基板１に透明電極２として膜厚２０００ÅのＩＴＯか
らなる透明導電膜を成膜した後に、その両端の端子部分
をマスクで覆ってスパッタリング法にて膜厚３０００Å
のＳｉ３ Ｎ４からなる第一絶縁膜３を形成し、次に同
じマスクを取付けて透明電極２および第一絶縁膜３を有
する基板１を図２に示す蒸着室８のヒータ１１の上に設
置する。蒸着室８の中にはヒータ１１に対向してＺｎＳ
ペレット１２を配置し、電子線源１３からの電子ビーム
１４を照射することにより蒸発させる。シャッタ１５を
操作することにより、加熱された基板１に膜厚５０００
ÅのＺｎＳ膜が成膜される。次にこの基板１を図３に示
すＭｎイオン注入室９に移す。イオン注入室９には基板
支持台２１とＭｎイオン源２２が対向配置されている。
上面に所定の位置に穴２４の明いたマスク２３を取付け
て基板１を支持台２１の上に置き、イオン加速電源２５
によりイオン源２２に直流電圧を印加すると、イオン源
２２でＭｎイオンがイオン化され、マスク２３の約０．
３ｍｍ 径の穴２４を通してＭｎイオンが基板１上のＺ
ｎＳ層に注入され、注入された領域に黄橙色に発光する
ＺｎＳ：Ｍｎが生成される。次いで基板１を図４に示す
Ｔｂイオン注入室１０に移す。この室にはＴｂイオン源
２６が収容されており、イオン注入室９におけると同様
にマスク２３の穴２４を通してＴｂイオンがＺｎＳ層中
に注入され、緑色に発光するＺｎＳ：Ｔｂが生成される
。マスク２３の穴２４が同じ位置にある所ではＭｎ，
Ｔｂが同じ領域に注入されるので、黄色に発光するＺｎ
Ｓ：Ｍｎ，Ｔｂが生成される。このようにして透明電極
２， 第一絶縁膜３の上に発光層４を形成した基板１の
上に第一絶縁膜３およびＺｎＳ膜成膜の際に用いたマス
クを取付け、膜厚３０００ÅのＳｉ３ Ｎ４ からなる
第二絶縁膜５を形成する。そしてその上に膜厚５０００
ÅのＡｌ膜を成膜して裏面電極６を形成する。Embodiment An embodiment of the present invention for a three-color display thin film EL element having the structure shown in FIG. 1 will be described. First, a transparent conductive film made of ITO with a thickness of 2000 Å is formed as a transparent electrode 2 on a glass substrate 1, and then a film with a thickness of 3000 Å is formed by sputtering with the terminal portions at both ends covered with a mask.
A first insulating film 3 made of Si3N4 is formed, and then the same mask is attached and the substrate 1 having the transparent electrode 2 and the first insulating film 3 is placed on the heater 11 of the vapor deposition chamber 8 shown in FIG. . Inside the vapor deposition chamber 8, facing the heater 11, there is ZnS.
Pellets 12 are placed and evaporated by irradiating them with an electron beam 14 from an electron beam source 13. By operating the shutter 15, a film thickness of 5000 is applied to the heated substrate 1.
A ZnS film with a thickness of .ANG. Next, this substrate 1 is transferred to a Mn ion implantation chamber 9 shown in FIG. In the ion implantation chamber 9, a substrate support stand 21 and a Mn ion source 22 are arranged facing each other. Attach a mask 23 with holes 24 at predetermined positions on the upper surface, place the substrate 1 on the support stand 21, and turn on the ion accelerating power source 25.
When a DC voltage is applied to the ion source 22, Mn ions are ionized by the ion source 22, and the mask 23 is approximately 0.
Mn ions pass through the hole 24 with a diameter of 3 mm into the Z region on the substrate 1.
ZnS:Mn is injected into the nS layer and emits yellow-orange light in the implanted region. Next, the substrate 1 is transferred to a Tb ion implantation chamber 10 shown in FIG. A Tb ion source 26 is housed in this chamber, and Tb ions are injected into the ZnS layer through the hole 24 of the mask 23 in the same manner as in the ion implantation chamber 9, producing ZnS:Tb that emits green light. Where the holes 24 of the mask 23 are at the same position, Mn,
Since Tb is implanted in the same area, Zn emits yellow light.
S: Mn, Tb are generated. The mask used in forming the first insulating film 3 and the ZnS film was attached to the substrate 1 on which the light emitting layer 4 was formed on the transparent electrode 2 and the first insulating film 3 in this way, and a film thickness of 3000 Å was formed. A second insulating film 5 made of Si3N4 is formed. And on top of that, a film thickness of 5000
A back electrode 6 is formed by depositing an Al film with a thickness of .ANG.
【０００９】このようにして製造された薄膜ＥＬ素子の
透明電極２と裏面電極６の間に駆動電源７により交流電
界を印加すると、発光層４のＭｎが注入された領域は黄
橙色に、Ｔｂが注入された領域は緑色にＭｎおよびＴｂ
が注入された領域は黄色に発光する３色表示素子となる
。When an AC electric field is applied by the drive power source 7 between the transparent electrode 2 and the back electrode 6 of the thin film EL device manufactured in this manner, the Mn-injected region of the light-emitting layer 4 turns yellow-orange and Tb The region where Mn and Tb were implanted is shown in green.
The region where is injected becomes a three-color display element that emits yellow light.
【００１０】上の実施例のほかに、ＺｎＳ膜にＳｍイオ
ンを注入すれば、赤色に発光する領域が得られる。また
、ＺｎＳのほかのＩＩ−ＶＩ族化合物としてＣａＳを用
いてユーロピウム（Ｅｕ） イオンを注入して赤色発光
領域を、ＳｒＳを用いてセリウム （Ｃｅ） イオンを
注入して緑色発光領域を生成することもできる。また発
光層母体材料としてＩＩ−ＶＩ族化合物以外の化合物、
例えば弗化カルシウムなどを用いることもできる。In addition to the above embodiment, if Sm ions are implanted into the ZnS film, a region that emits red light can be obtained. In addition, CaS, which is a II-VI group compound other than ZnS, can be used to implant europium (Eu) ions to create a red light-emitting region, and SrS can be used to implant cerium (Ce) ions to create a green light-emitting region. You can also do it. In addition, compounds other than II-VI compounds as the light-emitting layer matrix material,
For example, calcium fluoride can also be used.
【００１１】[0011]
【発明の効果】本発明によれば、螢光体母体材料を成膜
後、発光中心となる元素をイオン注入で導入して、導入
領域が所期の色で発光する発光層を作製するため、１回
のみで成膜で注入領域を制御することにより多色表示可
能の薄膜ＥＬ素子を簡単な工程で製造することが可能に
なった。[Effects of the Invention] According to the present invention, after forming a film of a phosphor matrix material, an element serving as a luminescent center is introduced by ion implantation to produce a luminescent layer in which the introduced region emits light in a desired color. By controlling the implantation area by forming a film only once, it has become possible to manufacture a thin film EL element capable of displaying multiple colors through a simple process.
【図１】本発明の一実施例により製造される薄膜ＥＬ素
子の断面図FIG. 1 is a cross-sectional view of a thin film EL device manufactured according to an embodiment of the present invention.
【図２】本発明の一実施例に用いられたＺｎＳ成膜装置
の断面図[Fig. 2] Cross-sectional view of a ZnS film forming apparatus used in an embodiment of the present invention
【図３】本発明の一実施例に用いられたＭｎイオン注入
装置の断面図[Fig. 3] Cross-sectional view of the Mn ion implantation device used in one embodiment of the present invention
【図４】本発明の一実施例に用いられたＴｂイオン注入
装置の断面図[Fig. 4] Cross-sectional view of a Tb ion implantation device used in one embodiment of the present invention.
【符号の説明】 １ ガラス基板 ２ 透明電極 ３ 第一絶縁膜 ４ 発光層 ５ 第二絶縁膜 ６ 裏面電極 ８ 蒸着室 ９ Ｍｎイオン注入室 １０ Ｔｂイオン注入室[Explanation of symbols] 1 Glass substrate 2 Transparent electrode 3 First insulation film 4. Luminescent layer 5 Second insulating film 6 Back electrode 8 Vapor deposition chamber 9 Mn ion implantation chamber 10 Tb ion implantation chamber
Claims (6)
加してなる発光層の両面に絶縁層を介して電極を備えた
薄膜エレクトロルミネセンス素子の製造方法において、
螢光体母体材料を成膜後、複数種類の発光中心となる元
素をそれぞれその膜の所定の領域にイオン注入により混
入することを特徴とする薄膜エレクトロルミネセンス素
子の製造方法。1. A method for manufacturing a thin film electroluminescent device, which comprises a luminescent layer formed by adding an element serving as a luminescent center to a phosphor base material, and electrodes provided on both sides of the luminescent layer via an insulating layer.
1. A method for producing a thin film electroluminescent device, which comprises forming a film of a phosphor matrix material, and then incorporating a plurality of types of elements serving as luminescent centers into predetermined regions of the film by ion implantation.
る請求項１記載の薄膜エレクトロルミネセンス素子の製
造方法。2. The method for producing a thin film electroluminescent device according to claim 1, wherein the phosphor matrix material is a II-VI group compound.
項２記載の薄膜エレクトロルミネセンス素子の製造方法
。3. The method for producing a thin film electroluminescent device according to claim 2, wherein the II-VI group compound is zinc sulfide.
項３記載の薄膜エレクトロルミネセンス素子の製造方法
。4. The method for manufacturing a thin film electroluminescent device according to claim 3, wherein the element serving as a luminescent center is manganese.
求項３記載の薄膜エレクトロルミネセンス素子の製造方
法。5. The method for manufacturing a thin film electroluminescent device according to claim 3, wherein the element serving as the luminescent center is tribium.
求項３記載の薄膜エレクトロルミネセンス素子の製造方
法。6. The method for manufacturing a thin film electroluminescent device according to claim 3, wherein the element serving as the luminescent center is samarium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3113602A JPH04341796A (en) | 1991-05-20 | 1991-05-20 | Manufacture of thin film electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3113602A JPH04341796A (en) | 1991-05-20 | 1991-05-20 | Manufacture of thin film electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04341796A true JPH04341796A (en) | 1992-11-27 |
Family
ID=14616376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3113602A Pending JPH04341796A (en) | 1991-05-20 | 1991-05-20 | Manufacture of thin film electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04341796A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2698878A1 (en) * | 1992-12-03 | 1994-06-10 | Futaba Denshi Kogyo Kk | Fluorescent substance excited by low velocity electrons - is formed by shallow activator-doping of crystalline matrix |
| JP2006164938A (en) * | 2004-11-11 | 2006-06-22 | Sony Corp | Light-emitting element, method of manufacturing the same, and light emission device |
-
1991
- 1991-05-20 JP JP3113602A patent/JPH04341796A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2698878A1 (en) * | 1992-12-03 | 1994-06-10 | Futaba Denshi Kogyo Kk | Fluorescent substance excited by low velocity electrons - is formed by shallow activator-doping of crystalline matrix |
| JP2006164938A (en) * | 2004-11-11 | 2006-06-22 | Sony Corp | Light-emitting element, method of manufacturing the same, and light emission device |
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