JPH04274341A - Section machining observation method - Google Patents
Section machining observation methodInfo
- Publication number
- JPH04274341A JPH04274341A JP3061285A JP6128591A JPH04274341A JP H04274341 A JPH04274341 A JP H04274341A JP 3061285 A JP3061285 A JP 3061285A JP 6128591 A JP6128591 A JP 6128591A JP H04274341 A JPH04274341 A JP H04274341A
- Authority
- JP
- Japan
- Prior art keywords
- scanning
- ion beam
- section
- sample
- optical axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000003754 machining Methods 0.000 title abstract 3
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 32
- 238000010894 electron beam technology Methods 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims description 21
- 238000005530 etching Methods 0.000 abstract description 6
- 239000013589 supplement Substances 0.000 description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】 本発明は、集束イオンビーム
で加工した被加工物の断面を電子ビームで走査し、該断
面像を作成する様にした断面加工観察方法に関する[Field of Industrial Application] The present invention relates to a cross-sectional processing and observation method in which a cross-section of a workpiece processed with a focused ion beam is scanned with an electron beam and an image of the cross-section is created.
【０
００２】。0
002].
【従来の技術】 ＬＳＩ素子や超ＬＳＩ素子等の半導
体素子作成過程において、これらの素子の作成評価を行
う必要がある。例えば、この様な評価は、この様な素子
の特定箇所の断面を観察する事によって行われている。2. Description of the Related Art In the process of manufacturing semiconductor devices such as LSI devices and VLSI devices, it is necessary to evaluate the fabrication of these devices. For example, such evaluation is performed by observing a cross section of a specific location of such an element.
【０００３】これまでは、この様な素子の如き試料を機
械的に切断するか、又は光学顕微鏡で観察しながら試料
を研磨して特定箇所の断面を表出させ、該断面を走査電
子顕微鏡で観察していたが、前者の機械的切断では特定
箇所を表出させる事は極めて難しい。又、後者の研磨と
光学顕微鏡の併用では、その作業が極めて厄介で、特定
箇所を表出させる事は簡単ではない。しかも、この様に
して特定箇所の断面を表出させてから、該試料を走査電
子顕微鏡にセットするので観察までに極めて多くの時間
が取られる。[0003] Up until now, samples such as these elements have been mechanically cut, or the sample has been polished while being observed with an optical microscope to expose a cross section at a specific location, and the cross section has been examined with a scanning electron microscope. As I have observed, it is extremely difficult to reveal specific areas with the former method of mechanical cutting. Furthermore, in the latter case, when polishing is used in combination with an optical microscope, the work is extremely troublesome, and it is not easy to expose a specific location. Moreover, since the sample is set in a scanning electron microscope after exposing the cross section of a specific location in this manner, it takes an extremely long time to observe it.
【０００４】そこで、最近、集束イオンビームで試料を
加工し、該集束イオンビーム軸方向より傾いた軸方向か
ら電子ビームによって該加工部分を走査し、該走査によ
って該加工部分から放出された電子（例えば、二次電子
）に基づいて断面加工像を作成する方法が提案されてい
る。この様な方法においては、図７に示す様に、集束イ
オンビームＦＩＢで試料の表面を紙面に垂直な方向に走
査しながら該イオンビーを観察すべき面ＯＣに向かって
移動させて直方体状の穴Ｈを加工している。そして、電
子ＥＢで該観察すべき面ＯＣを走査し、該走査により該
面から発生した電子に基づいて断面加工像を作成してい
る。Therefore, recently, a sample is processed with a focused ion beam, and the processed part is scanned with an electron beam from an axial direction tilted from the focused ion beam axis direction, and the electrons ( For example, a method of creating a cross-sectional processed image based on secondary electrons has been proposed. In this method, as shown in FIG. 7, a focused ion beam FIB is scanned over the surface of the sample in a direction perpendicular to the plane of the paper, and the ion beam is moved toward the surface OC to be observed to form a rectangular parallelepiped hole. Processing H. Then, the surface OC to be observed is scanned with the electron EB, and a cross-sectional processed image is created based on the electrons generated from the surface by the scanning.
【０００５】[0005]
【発明が解決しようとする課題】 しかし乍ら、この
様な方法においては、観察すべき面の表出に極めて多く
の時間が掛る事から、断面観察までに多くの時間を要す
る。[Problems to be Solved by the Invention] However, in such a method, it takes a very long time to expose the surface to be observed, and therefore it takes a lot of time to observe the cross section.
【０００６】本発明は、この様な問題を解決し、短時間
に断面観察が出来る様にした新規な断面加工観察方法を
提供する事を目的としたものである。The object of the present invention is to solve these problems and provide a new cross-sectional processing and observation method that enables cross-sectional observation in a short time.
【０００７】さて、本発明者は、前記提案された方法に
おいて、観察すべき面の断面加工像が作成される為には
、試料を最低どの程度の加工が行われねばならないかを
考察した。その結果、電子ビーム光軸に平行な方向から
観察面の大略全面を見込める様に、加工されれば良いこ
とが分かった。この様に加工されれれば、観察面の断面
加工像を得るのに最も最短の加工時間で済む事になる。Now, in the proposed method, the present inventor considered the minimum degree to which a sample must be processed in order to create a cross-sectional processed image of the surface to be observed. As a result, it was found that processing should be performed so that almost the entire surface of the observation surface can be viewed from a direction parallel to the optical axis of the electron beam. If processed in this way, it will take the shortest processing time to obtain a cross-sectional processed image of the observation surface.
【０００８】[0008]
【課題を解決するための手段】 本発明はこの様な原
理に基づいたもので、集束イオンビームにより被加工物
を加工する事により該イオンビーム光軸に平行な加工面
を表出させ、該集束イオンビーム光軸に対し傾いた光軸
を有する電子ビームにより、少なくとも前記集束イオン
ビーム光軸に平行な加工面を走査し、該走査により該加
工面から放出された電子に基づいて該加工面像を作成す
る様にした断面加工観察方法において、前記加工面を表
出させるために前記被加工物に形成される穴の底面が前
記電子ビーム光軸と大略平行になる様に被加工物を加工
した。[Means for Solving the Problems] The present invention is based on such a principle, and by processing a workpiece with a focused ion beam, a processed surface parallel to the optical axis of the ion beam is exposed. At least a processed surface parallel to the focused ion beam optical axis is scanned by an electron beam having an optical axis tilted with respect to the focused ion beam optical axis, and the processed surface is determined based on electrons emitted from the processed surface by the scanning. In a cross-sectional processing observation method that creates an image, the workpiece is placed so that the bottom surface of a hole formed in the workpiece to expose the processed surface is approximately parallel to the electron beam optical axis. processed.
【０００９】[0009]
【実施例】 図１は本発明の一実施例を示したもので
ある。Embodiment FIG. 1 shows an embodiment of the present invention.
【００１０】図中１はイオン銃、２はコンデンサレンズ
、３はブランキング電極、４はブランキング絞り、５は
対物レンズ、６Ｘ，６ＹはＸ，Ｙ偏向電極、７は電子銃
、８はブランキング電極、９はブランキング絞り、１０
はコンデンサレンズ、１１は対物レンズ、１２Ｘ，１２
ＹはＸ，Ｙ偏向レンズ、１３は試料、１４は二次電子検
出器、１５はアンプ、１６は陰極線管、１７は走査信号
発生回路、１８は走査領域指定装置、１９は走査信号作
成回路、２０は走査制御装置である。In the figure, 1 is an ion gun, 2 is a condenser lens, 3 is a blanking electrode, 4 is a blanking aperture, 5 is an objective lens, 6X and 6Y are X and Y deflection electrodes, 7 is an electron gun, and 8 is a blank. Ranking electrode, 9 is blanking aperture, 10
is a condenser lens, 11 is an objective lens, 12X, 12
Y is an X and Y deflection lens, 13 is a sample, 14 is a secondary electron detector, 15 is an amplifier, 16 is a cathode ray tube, 17 is a scanning signal generation circuit, 18 is a scanning area specifying device, 19 is a scanning signal generation circuit, 20 is a scanning control device.
【００１１】さて、半導体素子の如き試料の観察すべき
特定箇所は予め分かっており、該観察すべき面の加工深
さ（図２のＤＥ）及び観察すべき面の幅寸法Ｙが決まれ
ば、電子銃７からの電子ビーム光軸ＥＢＯの試料表面に
対する角度が決まっているので、加工される横方向の寸
法Ｘ及び加工すべき（エッチングすべき）量が決まる。
このエッチング量とイオンビームのドーズ量とは大略比
例するので、トータルイオンビームドーズ量ＤＴが決定
する。Now, the specific point to be observed on a sample such as a semiconductor element is known in advance, and once the processing depth (DE in FIG. 2) of the surface to be observed and the width dimension Y of the surface to be observed are determined, Since the angle of the electron beam optical axis EBO from the electron gun 7 with respect to the sample surface is determined, the lateral dimension X to be processed and the amount to be processed (etched) are determined. Since this etching amount and the ion beam dose are approximately proportional, the total ion beam dose DT is determined.
【００１２】又、加工すべき部分をイオンビーム光軸方
向から見た場合（図３）、該加工面を観察面ＯＣに平行
にＮ分割し、各々の区画Ｓ１，Ｓ２，Ｓ３，……，ＳＫ
，……ＳＮ−１，ＳＮの内、ＳＮが該観察面に最も近い
区画とする。この様に分割する事によって、各区画への
イオンビームドーズ量を決定する。今、区画Ｓ１のドー
ズ量をＤ１とすれば、区画ＳＫのドーズ量ＤＫが、ＤＫ
＝Ｄ１・Ｋ （１）となり、且つ、
ＤＴ＝Ｄ１＋Ｄ１・２＋Ｄ１・３＋……＋Ｄ１・Ｋ＋…
…＋Ｄ１・Ｎ （２）
となる様に各区画へのイオンビームドーズ量を決定する
。尚、電子ビーム光軸ＥＢＯの試料面に対する角度に対
応してＤ１の値が決定される。When the part to be processed is viewed from the ion beam optical axis direction (FIG. 3), the processing surface is divided into N sections parallel to the observation plane OC, and each section is divided into N sections S1, S2, S3, . . . S.K.
,...SN-1, SN is the section closest to the observation surface. By dividing in this way, the ion beam dose to each section is determined. Now, if the dose amount of section S1 is D1, then the dose amount DK of section SK is DK
=D1・K (1), and DT=D1+D1・2+D1・3+...+D1・K+...
...+D1·N (2) The ion beam dose to each section is determined so that it becomes...+D1·N (2). Note that the value of D1 is determined in accordance with the angle of the electron beam optical axis EBO with respect to the sample surface.
【００１３】この様にして決定されたイオンビームドー
ズ量で各区画をエッチングする場合、エッチングした際
に発生した粒子が観察面に再付着しない様に、区画１か
らＮへとラスタースキャンでエッチングする。この際、
各ドーズ量は各区画の走査時間でコントロールする。即
ち、今、Ｋ区画の走査時間をＴＫ、ビーム電流をＩとす
ると、
ＤＫ＝Ｉ・ＴＫ／ｅ・Ｓ （３）と表わす事が出
来る。該式で、Ｓ＝Ｘ・Ｙ／Ｎ、ｅは電気素量である。
該式から、走査時間ＴＫは、ＴＫ＝ＤＫ・ｅ・Ｘ・Ｙ／
Ｉ・Ｎ （４）である。When etching each section with the ion beam dose determined in this way, the etching is performed from section 1 to section N using a raster scan so that the particles generated during etching do not re-adhere to the observation surface. . On this occasion,
Each dose is controlled by the scanning time of each section. That is, now, if the scanning time of K section is TK and the beam current is I, it can be expressed as DK=I.TK/e.S (3). In this formula, S=X·Y/N, and e is an elementary charge. From this formula, the scanning time TK is TK=DK・e・X・Y/
I・N (4).
【００１４】そこで、キーボードの如き入力装置（図示
せず）から、トータルイオンビームドーズ量と、観察す
べき特定位置、イオンビーム光軸方向から見たエッチン
グすべき面の縦方向の寸法Ｙ、横方向の寸法Ｘ、及び、
該エッチングすべき面の分割数を走査制御装置２０に入
力する。該走査制御装置では、前記（１）式及び（２）
式に従って各区画のイオンビームドーズ量を決定し、更
に、前記（４）式に従って各区画の走査時間を決定する
。そして、走査信号作成回路１９は、該走査制御装置の
指令に従って、第３図に示す如き範囲の各分割領域Ｓ１
，Ｓ２，Ｓ３，……，ＳＫ，……ＳＮ−１，ＳＮをこの
順序で各指定された走査時間でラスター走査する様な走
査信号を作成する。図４，図５は夫々、該走査信号作成
回路で作成されたＸ方向走査信号の波形例、Ｙ方向走査
信号の波形例である。Therefore, from an input device such as a keyboard (not shown), the total ion beam dose, the specific position to be observed, the vertical dimension Y of the surface to be etched as seen from the ion beam optical axis direction, and the horizontal direction are input. directional dimension X, and
The number of divisions of the surface to be etched is input into the scan control device 20. In the scanning control device, the above formula (1) and (2) are satisfied.
The ion beam dose for each section is determined according to the formula, and the scanning time for each section is further determined according to the formula (4). Then, the scanning signal generating circuit 19 generates each divided area S1 in the range as shown in FIG.
, S2, S3, . . . , SK, . FIGS. 4 and 5 show an example of the waveform of an X-direction scanning signal and a waveform of a Y-direction scanning signal, respectively, created by the scanning signal creation circuit.
【００１５】この様なＸ方向走査信号、Ｙ方向走査信号
が夫々Ｘ，Ｙ偏向電極６Ｘ，６Ｙに送られると、イオン
銃１からのイオンビームはコンデンサレンズ２と対物レ
ンズ５で試料上で集束されると共に、該各偏向電極によ
り試料１３上の所定加工領域をラスター走査する。尚、
この時、ブランキング電極３はオフの状態にあり、イオ
ンビームが試料上へ照射されるのを妨げないが、ブラン
キング電極８はオンの状態にあり、電子銃７からの電子
ビームはブランキング絞り９により試料上への照射が妨
げられる。この様にして、試料上の所定領域がイオンビ
ームでエッチングされると、図６に示す様に、観察すべ
き面ＯＣが表出し、集束イオンビームＦＩＢ光軸と交差
する加工面が電子ビームＥＢ光軸と大略平行になる様に
試料が直角三角柱状にエッチングされる。When such an X direction scanning signal and a Y direction scanning signal are sent to the X and Y deflection electrodes 6X and 6Y, respectively, the ion beam from the ion gun 1 is focused on the sample by the condenser lens 2 and the objective lens 5. At the same time, a predetermined processing area on the sample 13 is raster scanned by each deflection electrode. still,
At this time, the blanking electrode 3 is in an off state and does not prevent the ion beam from being irradiated onto the sample, but the blanking electrode 8 is in an on state and the electron beam from the electron gun 7 is blanked. The aperture 9 prevents irradiation onto the sample. When a predetermined area on the sample is etched by the ion beam in this way, the surface OC to be observed is exposed, as shown in FIG. 6, and the processed surface intersecting the optical axis of the focused ion beam FIB is The sample is etched into a right triangular prism shape approximately parallel to the optical axis.
【００１６】該所定のエッチングが終わると、ブランキ
ング電極３，８は夫々オン，オフの状態になり、イオン
ビームは試料上に達しないが、電子ビームは試料上に達
する。この時、走査領域指定装置１８は電子ビームが前
記観察すべき面ＯＣを走査する指令を走査信号作成回路
１７に送る。該走査信号作成回路で作成されたＸ，Ｙ走
査信号は夫々Ｘ，Ｙ偏向レンズ１２Ｘ，１２Ｙに送られ
るので、電子銃７からの電子ビームはコンデンサレンズ
１０と対物レンズ１１で試料上で集束されると共に、該
各偏向レンズにより試料１３上の観察面ＯＣを走査する
。該走査により該観察面から放出された二次電子は二次
電子検出器１４に検出される。該検出された二次電子に
基づく信号はアンプ１５を介して陰極線管１６に送られ
る。該陰極線管の偏向系には前記走査信号作成回路１７
からのＸ，Ｙ走査信号が同期して送られているので、該
陰極線管画面上には試料の観察面の像が表示される。When the predetermined etching is completed, the blanking electrodes 3 and 8 are turned on and off, respectively, and the ion beam does not reach the sample, but the electron beam does reach the sample. At this time, the scanning area specifying device 18 sends a command to the scanning signal generating circuit 17 for the electron beam to scan the surface OC to be observed. The X and Y scanning signals created by the scanning signal creation circuit are sent to the X and Y deflection lenses 12X and 12Y, respectively, so that the electron beam from the electron gun 7 is focused on the sample by the condenser lens 10 and the objective lens 11. At the same time, the observation plane OC on the sample 13 is scanned by each of the deflecting lenses. Secondary electrons emitted from the observation surface by the scanning are detected by the secondary electron detector 14. A signal based on the detected secondary electrons is sent to a cathode ray tube 16 via an amplifier 15. The deflection system of the cathode ray tube includes the scanning signal generating circuit 17.
Since the X and Y scanning signals are sent synchronously, an image of the observation surface of the sample is displayed on the cathode ray tube screen.
【００１７】尚、前記実施例では各区画の各ドーズ量を
直接走査時間でコントロールしたが、各区画の走査時間
は全て同一にして、各区画の走査回数を各区画毎にリニ
アに変化させてコントロールしても良い。[0017] In the above embodiment, each dose amount of each section was directly controlled by the scanning time, but the scanning time of each section was made the same, and the number of scans of each section was varied linearly for each section. You can control it.
【００１８】又、観察面の像は、観察面からの反射電子
に基づいて作成しても良い。Furthermore, the image of the observation surface may be created based on reflected electrons from the observation surface.
【００１９】[0019]
【発明の効果】 本発明では、集束イオンビーム光軸
と交差する加工底面が電子ビーム光軸と大略平行になる
様に被加工物を加工したので、観察面の断面加工像を得
るのに最短の加工時間で済む。Effects of the Invention In the present invention, the workpiece is processed so that the processed bottom surface that intersects with the focused ion beam optical axis is approximately parallel to the electron beam optical axis. processing time.
【図１】 本発明の一実施例を示したものである。FIG. 1 shows an embodiment of the present invention.
【図２】 本発明の動作の説明を補足する為に用いた
ものである。FIG. 2 is used to supplement the explanation of the operation of the present invention.
【図３】 本発明の動作の説明を補足する為に用いた
ものである。FIG. 3 is used to supplement the explanation of the operation of the present invention.
【図４】 本発明の動作の説明を補足する為に用いた
ものである。FIG. 4 is used to supplement the explanation of the operation of the present invention.
【図５】 本発明の動作の説明を補足する為に用いた
ものである。FIG. 5 is used to supplement the explanation of the operation of the present invention.
【図６】 本発明の動作の説明を補足する為に用いた
ものである。FIG. 6 is used to supplement the explanation of the operation of the present invention.
【図７】 従来の方法による加工された穴の断面を示
したものである。FIG. 7 shows a cross section of a hole machined by a conventional method.
１：イオン銃 ２：コンデンサレンズ ３
：ブランキング電極 ４：ブランキング絞り
５：対物レンズ ６Ｘ，６Ｙ：Ｘ，Ｙ偏向電
極 ７：電子銃 ８：ブランキング電極
９：ブランキング絞り １０：コンデンサ
レンズ １１：対物レンズ １２Ｘ，１２
Ｙ：Ｘ，Ｙ偏向レンズ １３：試料 １４
：二次電子検出器 １５：アンプ １６：
陰極線管 １７：走査信号発生回路 １８
：走査領域指定装置 １９：走査信号作成回路
２０：走査制御装置1: Ion gun 2: Condenser lens 3
:Blanking electrode 4:Blanking aperture
5: Objective lens 6X, 6Y: X, Y deflection electrode 7: Electron gun 8: Blanking electrode
9: Blanking aperture 10: Condenser lens 11: Objective lens 12X, 12
Y: X, Y deflection lens 13: Sample 14
: Secondary electron detector 15: Amplifier 16:
Cathode ray tube 17: Scanning signal generation circuit 18
:Scanning area specifying device 19:Scanning signal generation circuit
20: Scanning control device
Claims (1)
工する事により該イオンビーム光軸に平行な加工面を表
出させ、該集束イオンビーム光軸に対し傾いた光軸を有
する電子ビームにより、少なくとも前記集束イオンビー
ム光軸に平行な加工面を走査し、該走査により該加工面
から放出された電子に基づいて該加工面像を作成する様
にした断面加工観察方法において、前記加工面を表出さ
せるために前記被加工物に形成される穴の底面が前記電
子ビーム光軸と大略平行になる様に被加工物を加工した
断面加工観察方法。1. Processing a workpiece with a focused ion beam to expose a processed surface parallel to the optical axis of the ion beam, and using an electron beam having an optical axis tilted with respect to the optical axis of the focused ion beam, In a cross-sectional processing observation method, the processing surface is scanned at least parallel to the optical axis of the focused ion beam, and an image of the processing surface is created based on electrons emitted from the processing surface by the scanning. A cross-sectional processing and observation method in which a workpiece is processed so that the bottom surface of a hole formed in the workpiece for exposure is approximately parallel to the optical axis of the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3061285A JP2824340B2 (en) | 1991-03-01 | 1991-03-01 | Section processing observation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3061285A JP2824340B2 (en) | 1991-03-01 | 1991-03-01 | Section processing observation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04274341A true JPH04274341A (en) | 1992-09-30 |
| JP2824340B2 JP2824340B2 (en) | 1998-11-11 |
Family
ID=13166779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3061285A Expired - Fee Related JP2824340B2 (en) | 1991-03-01 | 1991-03-01 | Section processing observation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2824340B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220344A (en) * | 2006-02-14 | 2007-08-30 | Sii Nanotechnology Inc | Focused ion beam device and method of processing and observing test piece |
| US7952083B2 (en) * | 2004-09-29 | 2011-05-31 | Hitachi High-Technologies Corporation | Ion beam system and machining method |
| EP2743026A3 (en) * | 2012-11-12 | 2017-10-11 | Carl Zeiss Microscopy GmbH | Method of processing a material-specimen |
| WO2023150026A1 (en) * | 2022-02-02 | 2023-08-10 | Kla Corporation | Combining focused ion beam milling and scanning electron microscope imaging |
-
1991
- 1991-03-01 JP JP3061285A patent/JP2824340B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7952083B2 (en) * | 2004-09-29 | 2011-05-31 | Hitachi High-Technologies Corporation | Ion beam system and machining method |
| JP2007220344A (en) * | 2006-02-14 | 2007-08-30 | Sii Nanotechnology Inc | Focused ion beam device and method of processing and observing test piece |
| EP2743026A3 (en) * | 2012-11-12 | 2017-10-11 | Carl Zeiss Microscopy GmbH | Method of processing a material-specimen |
| WO2023150026A1 (en) * | 2022-02-02 | 2023-08-10 | Kla Corporation | Combining focused ion beam milling and scanning electron microscope imaging |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2824340B2 (en) | 1998-11-11 |
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