JP2824340B2 - Section processing observation method - Google Patents
Section processing observation methodInfo
- Publication number
- JP2824340B2 JP2824340B2 JP3061285A JP6128591A JP2824340B2 JP 2824340 B2 JP2824340 B2 JP 2824340B2 JP 3061285 A JP3061285 A JP 3061285A JP 6128591 A JP6128591 A JP 6128591A JP 2824340 B2 JP2824340 B2 JP 2824340B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- scanning
- section
- optical axis
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】 本発明は、集束イオンビームで
加工した被加工物の断面を電子ビームで走査し、該断面
像を作成する様にした断面加工観察方法に関するBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cross-section processing observation method in which a cross-section of a workpiece processed with a focused ion beam is scanned with an electron beam to form the cross-sectional image.
【０００２】。[0002]
【従来の技術】 ＬＳＩ素子や超ＬＳＩ素子等の半導体
素子作成過程において、これらの素子の作成評価を行う
必要がある。例えば、この様な評価は、この様な素子の
特定箇所の断面を観察する事によって行われている。2. Description of the Related Art In the process of producing semiconductor devices such as LSI devices and super LSI devices, it is necessary to evaluate the production of these devices. For example, such an evaluation is performed by observing a cross section of a specific portion of such an element.
【０００３】これまでは、この様な素子の如き試料を機
械的に切断するか、又は光学顕微鏡で観察しながら試料
を研磨して特定箇所の断面を表出させ、該断面を走査電
子顕微鏡で観察していたが、前者の機械的切断では特定
箇所を表出させる事は極めて難しい。又、後者の研磨と
光学顕微鏡の併用では、その作業が極めて厄介で、特定
箇所を表出させる事は簡単ではない。しかも、この様に
して特定箇所の断面を表出させてから、該試料を走査電
子顕微鏡にセットするので観察までに極めて多くの時間
が取られる。Heretofore, a sample such as such an element has been mechanically cut or polished while observing it with an optical microscope to reveal a cross section of a specific portion, and the cross section is scanned with a scanning electron microscope. As we have observed, it is extremely difficult to reveal a specific location with the former mechanical cutting. In addition, when the latter is used in combination with polishing and an optical microscope, the operation is extremely troublesome, and it is not easy to expose a specific portion. Moreover, since the sample is set on the scanning electron microscope after the cross section of the specific portion is exposed in this way, an extremely long time is required until observation.
【０００４】そこで、最近、集束イオンビームで試料を
加工し、該集束イオンビーム軸方向より傾いた軸方向か
ら電子ビームによって該加工部分を走査し、該走査によ
って該加工部分から放出された電子（例えば、二次電
子）に基づいて断面加工像を作成する方法が提案されて
いる。この様な方法においては、図７に示す様に、集束
イオンビームＦＩＢで試料の表面を紙面に垂直な方向に
走査しながら該イオンビーを観察すべき面ＯＣに向かっ
て移動させて直方体状の穴Ｈを加工している。そして、
電子ＥＢで該観察すべき面ＯＣを走査し、該走査により
該面から発生した電子に基づいて断面加工像を作成して
いる。Therefore, recently, a sample is processed with a focused ion beam, the processed portion is scanned with an electron beam from an axial direction inclined from the axial direction of the focused ion beam, and electrons emitted from the processed portion by the scanning ( For example, a method of creating a cross-section processed image based on secondary electrons) has been proposed. In such a method, as shown in FIG. 7, the focused ion beam FIB scans the surface of the sample in a direction perpendicular to the plane of the paper, and moves the ion beam toward the surface OC to be observed to form a rectangular parallelepiped hole. H is processed. And
The surface OC to be observed is scanned by the electrons EB, and a cross-section processed image is created based on electrons generated from the surface by the scanning.
【０００５】[0005]
【発明が解決しようとする課題】 しかし乍ら、この様
な方法においては、観察すべき面の表出に極めて多くの
時間が掛る事から、断面観察までに多くの時間を要す
る。However, in such a method, a very long time is required to expose a surface to be observed, so that much time is required until cross-section observation.
【０００６】本発明は、この様な問題を解決し、短時間
に断面観察が出来る様にした新規な断面加工観察方法を
提供する事を目的としたものである。An object of the present invention is to solve such a problem and to provide a novel cross-section processing observation method capable of observing a cross-section in a short time.
【０００７】さて、本発明者は、前記提案された方法に
おいて、観察すべき面の断面加工像が作成される為に
は、試料を最低どの程度の加工が行われねばならないか
を考察した。その結果、電子ビーム光軸に平行な方向か
ら観察面の大略全面を見込める様に、加工されれば良い
ことが分かった。この様に加工されれれば、観察面の断
面加工像を得るのに最も最短の加工時間で済む事にな
る。[0007] The inventor of the present invention considered at least how much processing must be performed on a sample in order to form a cross-section processed image of a surface to be observed in the proposed method. As a result, it was found that processing should be performed so that substantially the entire observation surface can be viewed from a direction parallel to the electron beam optical axis. With such processing, the shortest processing time is required to obtain a cross-sectional processed image of the observation surface.
【０００８】[0008]
【課題を解決するための手段】 本発明はこの様な原理
に基づいたもので、集束イオンビームにより被加工物を
加工する事により該イオンビーム光軸に平行な加工面を
表出させ、該集束イオンビーム光軸に対し傾いた光軸を
有する電子ビームにより、少なくとも前記集束イオンビ
ーム光軸に平行な加工面を走査し、該走査により該加工
面から放出された電子に基づいて該加工面像を作成する
様にした断面加工観察方法において、前記加工面を表出
させるために前記被加工物に形成される穴の底面が前記
電子ビーム光軸と大略平行になる様に被加工物を加工し
た。Means for Solving the Problems The present invention is based on such a principle. By processing a workpiece with a focused ion beam, a processing surface parallel to the ion beam optical axis is exposed. At least a processing surface parallel to the focused ion beam optical axis is scanned by an electron beam having an optical axis inclined with respect to the focused ion beam optical axis, and the processed surface is scanned based on electrons emitted from the processed surface by the scanning. In the cross-section processing observation method for forming an image, the workpiece is formed such that the bottom surface of a hole formed in the workpiece is substantially parallel to the electron beam optical axis in order to expose the processing surface. processed.
【０００９】[0009]
【実施例】 図１は本発明の一実施例を示したものであ
る。FIG. 1 shows an embodiment of the present invention.
【００１０】図中１はイオン銃、２はコンデンサレン
ズ、３はブランキング電極、４はブランキング絞り、５
は対物レンズ、６Ｘ，６ＹはＸ，Ｙ偏向電極、７は電子
銃、８はブランキング電極、９はブランキング絞り、１
０はコンデンサレンズ、１１は対物レンズ、１２Ｘ，１
２ＹはＸ，Ｙ偏向レンズ、１３は試料、１４は二次電子
検出器、１５はアンプ、１６は陰極線管、１７は走査信
号発生回路、１８は走査領域指定装置、１９は走査信号
作成回路、２０は走査制御装置である。In the figure, 1 is an ion gun, 2 is a condenser lens, 3 is a blanking electrode, 4 is a blanking aperture, 5
Is an objective lens, 6X and 6Y are X and Y deflection electrodes, 7 is an electron gun, 8 is a blanking electrode, 9 is a blanking stop, 1
0 is a condenser lens, 11 is an objective lens, 12X, 1
2Y is an X and Y deflection lens, 13 is a sample, 14 is a secondary electron detector, 15 is an amplifier, 16 is a cathode ray tube, 17 is a scanning signal generation circuit, 18 is a scanning area designating device, 19 is a scanning signal generation circuit, Reference numeral 20 denotes a scanning control device.
【００１１】さて、半導体素子の如き試料の観察すべき
特定箇所は予め分かっており、該観察すべき面の加工深
さ（図２のＤＥ）及び観察すべき面の幅寸法Ｙが決まれ
ば、電子銃７からの電子ビーム光軸ＥＢＯの試料表面に
対する角度が決まっているので、加工される横方向の寸
法Ｘ及び加工すべき（エッチングすべき）量が決まる。
このエッチング量とイオンビームのドーズ量とは大略比
例するので、トータルイオンビームドーズ量ＤＴが決定
する。Now, a specific portion to be observed of a sample such as a semiconductor element is known in advance, and if the processing depth of the surface to be observed (DE in FIG. 2) and the width dimension Y of the surface to be observed are determined, Since the angle of the optical axis EBO of the electron beam from the electron gun 7 with respect to the sample surface is determined, the lateral dimension X to be processed and the amount to be processed (etched) are determined.
Since the amount of etching and the dose of the ion beam are substantially proportional, the total ion beam dose DT is determined.
【００１２】又、加工すべき部分をイオンビーム光軸方
向から見た場合（図３）、該加工面を観察面ＯＣに平行
にＮ分割し、各々の区画Ｓ１，Ｓ２，Ｓ３，……，
ＳＫ，……ＳＮ−１，ＳＮの内、ＳＮが該観察面に最も
近い区画とする。この様に分割する事によって、各区画
へのイオンビームドーズ量を決定する。今、区画Ｓ１の
ドーズ量をＤ１とすれば、区画ＳＫのドーズ量ＤＫが、 ＤＫ＝Ｄ１・Ｋ （１） となり、且つ、 ＤＴ＝Ｄ１＋Ｄ１・２＋Ｄ１・３＋……＋Ｄ１・Ｋ＋…
…＋Ｄ１・Ｎ （２） となる様に各区画へのイオンビームドーズ量を決定す
る。尚、電子ビーム光軸ＥＢＯの試料面に対する角度に
対応してＤ１の値が決定される。When the portion to be processed is viewed from the direction of the optical axis of the ion beam (FIG. 3), the processed surface is divided into N parallel to the observation surface OC, and each of the sections S 1 , S 2 , S 3 , ……,
Of the SK ,... S N−1 , S N , S N is the section closest to the observation surface. By dividing in this manner, the ion beam dose to each section is determined. Now, if the dose compartment S 1 and D 1, the dose D K compartments S K is, D K = D 1 · K (1) becomes and, D T = D 1 + D 1 · 2 + D 1 · 3 + ...... + D 1 · K + ...
.. + D 1 · N (2) The ion beam dose to each section is determined. The value of D 1 is determined in accordance with the angle to the sample surface of the electron beam optical axis EBO.
【００１３】この様にして決定されたイオンビームドー
ズ量で各区画をエッチングする場合、エッチングした際
に発生した粒子が観察面に再付着しない様に、区画１か
らＮへとラスタースキャンでエッチングする。この際、
各ドーズ量は各区画の走査時間でコントロールする。即
ち、今、Ｋ区画の走査時間をＴＫ、ビーム電流をＩとす
ると、 ＤＫ＝Ｉ・ＴＫ／ｅ・Ｓ （３） と表わす事が出来る。該式で、Ｓ＝Ｘ・Ｙ／Ｎ、ｅは電
気素量である。該式から、走査時間ＴＫは、 ＴＫ＝ＤＫ・ｅ・Ｘ・Ｙ／Ｉ・Ｎ （４） である。When each section is etched with the ion beam dose determined in this manner, the sections 1 to N are etched by raster scan so that particles generated during the etching do not adhere to the observation surface. . On this occasion,
Each dose amount is controlled by the scanning time of each section. That is, assuming that the scanning time of the K section is T K and the beam current is I, D K = I · T K / e · S (3). In this equation, S = X · Y / N, e is the elementary charge. From this equation, the scanning time T K is as follows: T K = D K e e XY / IN (4)
【００１４】そこで、キーボードの如き入力装置（図示
せず）から、トータルイオンビームドーズ量と、観察す
べき特定位置、イオンビーム光軸方向から見たエッチン
グすべき面の縦方向の寸法Ｙ、横方向の寸法Ｘ、及び、
該エッチングすべき面の分割数を走査制御装置２０に入
力する。該走査制御装置では、前記（１）式及び（２）
式に従って各区画のイオンビームドーズ量を決定し、更
に、前記（４）式に従って各区画の走査時間を決定す
る。そして、走査信号作成回路１９は、該走査制御装置
の指令に従って、第３図に示す如き範囲の各分割領域Ｓ
１，Ｓ２，Ｓ３，……，ＳＫ，……ＳＮ−１，ＳＮをこ
の順序で各指定された走査時間でラスター走査する様な
走査信号を作成する。図４，図５は夫々、該走査信号作
成回路で作成されたＸ方向走査信号の波形例、Ｙ方向走
査信号の波形例である。Therefore, an input device (not shown) such as a keyboard is used to input a total ion beam dose, a specific position to be observed, a vertical dimension Y and a horizontal dimension of a surface to be etched as viewed from the ion beam optical axis direction. Direction dimension X, and
The number of divisions of the surface to be etched is input to the scanning control device 20. In the scanning control device, the above equation (1) and (2)
The ion beam dose of each section is determined according to the equation, and the scanning time of each section is determined according to the equation (4). Then, the scanning signal creation circuit 19, according to the command of the scanning control device, sets each divided area S in the range as shown in FIG.
1 , S 2 , S 3 ,..., S K ,..., S N−1 , S N are generated in this order in such a manner that the scanning signals are raster-scanned at the designated scanning times. FIGS. 4 and 5 are waveform examples of the X-direction scanning signal and the Y-direction scanning signal generated by the scanning signal generation circuit, respectively.
【００１５】この様なＸ方向走査信号、Ｙ方向走査信号
が夫々Ｘ，Ｙ偏向電極６Ｘ，６Ｙに送られると、イオン
銃１からのイオンビームはコンデンサレンズ２と対物レ
ンズ５で試料上で集束されると共に、該各偏向電極によ
り試料１３上の所定加工領域をラスター走査する。尚、
この時、ブランキング電極３はオフの状態にあり、イオ
ンビームが試料上へ照射されるのを妨げないが、ブラン
キング電極８はオンの状態にあり、電子銃７からの電子
ビームはブランキング絞り９により試料上への照射が妨
げられる。この様にして、試料上の所定領域がイオンビ
ームでエッチングされると、図６に示す様に、観察すべ
き面ＯＣが表出し、集束イオンビームＦＩＢ光軸と交差
する加工面が電子ビームＥＢ光軸と大略平行になる様に
試料が直角三角柱状にエッチングされる。When such X-direction scanning signal and Y-direction scanning signal are sent to the X and Y deflection electrodes 6X and 6Y, respectively, the ion beam from the ion gun 1 is focused on the sample by the condenser lens 2 and the objective lens 5. At the same time, a predetermined processing area on the sample 13 is raster-scanned by the respective deflection electrodes. still,
At this time, the blanking electrode 3 is off and does not prevent the ion beam from being irradiated onto the sample, but the blanking electrode 8 is on and the electron beam from the electron gun 7 is blanked. The aperture 9 prevents irradiation on the sample. When a predetermined region on the sample is etched by the ion beam in this manner, as shown in FIG. 6, a surface OC to be observed is exposed, and a processing surface that intersects the optical axis of the focused ion beam FIB is an electron beam EB. The sample is etched into a right triangular prism so as to be substantially parallel to the optical axis.
【００１６】該所定のエッチングが終わると、ブランキ
ング電極３，８は夫々オン，オフの状態になり、イオン
ビームは試料上に達しないが、電子ビームは試料上に達
する。この時、走査領域指定装置１８は電子ビームが前
記観察すべき面ＯＣを走査する指令を走査信号作成回路
１７に送る。該走査信号作成回路で作成されたＸ，Ｙ走
査信号は夫々Ｘ，Ｙ偏向レンズ１２Ｘ，１２Ｙに送られ
るので、電子銃７からの電子ビームはコンデンサレンズ
１０と対物レンズ１１で試料上で集束されると共に、該
各偏向レンズにより試料１３上の観察面ＯＣを走査す
る。該走査により該観察面から放出された二次電子は二
次電子検出器１４に検出される。該検出された二次電子
に基づく信号はアンプ１５を介して陰極線管１６に送ら
れる。該陰極線管の偏向系には前記走査信号作成回路１
７からのＸ，Ｙ走査信号が同期して送られているので、
該陰極線管画面上には試料の観察面の像が表示される。When the predetermined etching is completed, the blanking electrodes 3 and 8 are turned on and off, respectively, and the ion beam does not reach the sample, but the electron beam reaches the sample. At this time, the scanning area designating device 18 sends a command for scanning the surface OC to be observed by the electron beam to the scanning signal generating circuit 17. The X and Y scanning signals created by the scanning signal creation circuit are sent to the X and Y deflection lenses 12X and 12Y, respectively, so that the electron beam from the electron gun 7 is focused on the sample by the condenser lens 10 and the objective lens 11. At the same time, the observation surface OC on the sample 13 is scanned by the respective deflection lenses. Secondary electrons emitted from the observation surface by the scanning are detected by the secondary electron detector 14. A signal based on the detected secondary electrons is sent to a cathode ray tube 16 via an amplifier 15. The scanning signal generating circuit 1 is provided in the deflection system of the cathode ray tube.
Since the X and Y scanning signals from 7 are sent synchronously,
An image of the observation surface of the sample is displayed on the cathode ray tube screen.
【００１７】尚、前記実施例では各区画の各ドーズ量を
直接走査時間でコントロールしたが、各区画の走査時間
は全て同一にして、各区画の走査回数を各区画毎にリニ
アに変化させてコントロールしても良い。In the above embodiment, each dose amount of each section is directly controlled by the scanning time. However, the scanning time of each section is all the same, and the number of scans of each section is changed linearly for each section. You may control.
【００１８】又、観察面の像は、観察面からの反射電子
に基づいて作成しても良い。The image of the observation surface may be created based on the reflected electrons from the observation surface.
【００１９】[0019]
【発明の効果】 本発明では、集束イオンビーム光軸と
交差する加工底面が電子ビーム光軸と大略平行になる様
に被加工物を加工したので、観察面の断面加工像を得る
のに最短の加工時間で済む。According to the present invention, since the workpiece is processed so that the processing bottom surface that intersects the focused ion beam optical axis is substantially parallel to the electron beam optical axis, the shortest time is required to obtain a cross-sectional processed image of the observation surface. Processing time.
【図１】 本発明の一実施例を示したものである。FIG. 1 shows an embodiment of the present invention.
【図２】 本発明の動作の説明を補足する為に用いたも
のである。FIG. 2 is used to supplement the description of the operation of the present invention.
【図３】 本発明の動作の説明を補足する為に用いたも
のである。FIG. 3 is used to supplement the description of the operation of the present invention.
【図４】 本発明の動作の説明を補足する為に用いたも
のである。FIG. 4 is used to supplement the description of the operation of the present invention.
【図５】 本発明の動作の説明を補足する為に用いたも
のである。FIG. 5 is used to supplement the description of the operation of the present invention.
【図６】 本発明の動作の説明を補足する為に用いたも
のである。FIG. 6 is used to supplement the description of the operation of the present invention.
【図７】 従来の方法による加工された穴の断面を示し
たものである。FIG. 7 shows a cross section of a hole machined by a conventional method.
１：イオン銃 ２：コンデンサレンズ ３：ブラン
キング電極 ４：ブランキング絞り ５：対物レン
ズ ６Ｘ，６Ｙ：Ｘ，Ｙ偏向電極 ７：電子銃
８：ブランキング電極 ９：ブランキング絞り １
０：コンデンサレンズ １１：対物レンズ １２
Ｘ，１２Ｙ：Ｘ，Ｙ偏向レンズ １３：試料 １
４：二次電子検出器 １５：アンプ １６：陰極線
管 １７：走査信号発生回路 １８：走査領域指定
装置 １９：走査信号作成回路 ２０：走査制御装
置1: ion gun 2: condenser lens 3: blanking electrode 4: blanking diaphragm 5: objective lens 6X, 6Y: X, Y deflection electrode 7: electron gun
8: Blanking electrode 9: Blanking aperture 1
0: Condenser lens 11: Objective lens 12
X, 12Y: X, Y deflection lens 13: Sample 1
4: Secondary electron detector 15: Amplifier 16: Cathode ray tube 17: Scanning signal generation circuit 18: Scanning area designating device 19: Scanning signal generation circuit 20: Scanning control device
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/265 Ｄ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/3065 H01L 21/265 D
Claims (1)
する事により該イオンビーム光軸に平行な加工面を表出
させ、該集束イオンビーム光軸に対し傾いた光軸を有す
る電子ビームにより、少なくとも前記集束イオンビーム
光軸に平行な加工面を走査し、該走査により該加工面か
ら放出された電子に基づいて該加工面像を作成する様に
した断面加工観察方法において、前記加工面を表出させ
るために前記被加工物に形成される穴の底面が前記電子
ビーム光軸と大略平行になる様に被加工物を加工した断
面加工観察方法。An object to be machined is processed by a focused ion beam so that a processing surface parallel to the optical axis of the ion beam is exposed, and an electron beam having an optical axis tilted with respect to the optical axis of the focused ion beam is used. In a cross-section processing observation method in which at least a processing surface parallel to the focused ion beam optical axis is scanned and the processing surface image is created based on electrons emitted from the processing surface by the scanning, the processing surface is A cross-section processing observation method in which a workpiece is processed such that a bottom surface of a hole formed in the workpiece to be exposed is substantially parallel to an optical axis of the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3061285A JP2824340B2 (en) | 1991-03-01 | 1991-03-01 | Section processing observation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3061285A JP2824340B2 (en) | 1991-03-01 | 1991-03-01 | Section processing observation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04274341A JPH04274341A (en) | 1992-09-30 |
| JP2824340B2 true JP2824340B2 (en) | 1998-11-11 |
Family
ID=13166779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3061285A Expired - Fee Related JP2824340B2 (en) | 1991-03-01 | 1991-03-01 | Section processing observation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2824340B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5033314B2 (en) * | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | Ion beam processing apparatus and processing method |
| JP5099291B2 (en) * | 2006-02-14 | 2012-12-19 | エスアイアイ・ナノテクノロジー株式会社 | Focused ion beam apparatus and sample cross-section processing and observation method |
| DE102012022168A1 (en) * | 2012-11-12 | 2014-05-28 | Carl Zeiss Microscopy Gmbh | METHOD FOR PROCESSING A MATERIAL PIECE |
| US20230245933A1 (en) * | 2022-02-02 | 2023-08-03 | Kla Corporation | Combining focused ion beam milling and scanning electron microscope imaging |
-
1991
- 1991-03-01 JP JP3061285A patent/JP2824340B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04274341A (en) | 1992-09-30 |
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