JPH04262589A - Manufacture of optical semiconductor device - Google Patents
Manufacture of optical semiconductor deviceInfo
- Publication number
- JPH04262589A JPH04262589A JP4426091A JP4426091A JPH04262589A JP H04262589 A JPH04262589 A JP H04262589A JP 4426091 A JP4426091 A JP 4426091A JP 4426091 A JP4426091 A JP 4426091A JP H04262589 A JPH04262589 A JP H04262589A
- Authority
- JP
- Japan
- Prior art keywords
- cleavage
- wafer
- view
- stripe region
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 230000003287 optical effect Effects 0.000 title claims description 3
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 38
- 230000007017 scission Effects 0.000 claims abstract description 38
- 230000001939 inductive effect Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 13
- 239000008188 pellet Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 8
- 235000019219 chocolate Nutrition 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 29
- 238000000926 separation method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、光半導体装置の製造方
法に関し、特にレーザダイオードウェハの分割方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical semiconductor device, and more particularly to a method for dividing a laser diode wafer.
【０００２】0002
【従来の技術】半導体レーザは、ガスレーザ、固体レー
ザとは異なり、チップ自身の平行した劈開面を共振器ミ
ラーとしている。この劈開面を有するレーザダイオード
の従来の形成方法は以下の通りである。2. Description of the Related Art Unlike gas lasers and solid-state lasers, semiconductor lasers use parallel cleavage planes of the chip itself as resonator mirrors. A conventional method for forming a laser diode having this cleavage plane is as follows.
【０００３】化合物半導体基板上にエピタキシャル成長
やイオン注入を行って活性層を形成する。このエピタキ
シャルウェハは基板の厚さを含めて数百μｍの厚さがあ
るのでこのままでは劈開は困難である。そこで、研磨に
より厚さを１００μｍ程度あるいはそれ以下とし、その
後メタル蒸着、アロイ等の処理を施して電極を形成しレ
ーザダイオードウェハを仕上げる。An active layer is formed on a compound semiconductor substrate by epitaxial growth or ion implantation. Since this epitaxial wafer has a thickness of several hundred μm including the thickness of the substrate, it is difficult to cleave it as it is. Therefore, the thickness is reduced to about 100 μm or less by polishing, and then metal vapor deposition, alloying, etc. are performed to form electrodes and the laser diode wafer is completed.
【０００４】図８はこのようにして形成されたウェハの
斜視図〔（ａ）〕とその部分平面図〔（ｂ）〕である〔
以下、（ａ）と（ｂ）のある図面は（ａ）が斜視図で（
ｂ）が平面図である〕。同図において、１ａは研磨によ
り薄く仕上げられたレーザダイオードウェハ、２は活性
ストライプ領域である。FIG. 8 is a perspective view [(a)] and a partial plan view [(b)] of a wafer formed in this manner.
Below, in the drawings (a) and (b), (a) is a perspective view and (
b) is a plan view]. In the figure, 1a is a laser diode wafer that has been polished to a thin finish, and 2 is an active stripe region.
【０００５】次の劈開工程では、図９に示すように、ウ
ェハの一端にダイヤモンドポイント１１等でキズを入れ
、１本ずつ押し割るようにして劈開線９ａを走らせ、２
面に平行した劈開面を持つ棒状ウェハ１０ａ（図１０）
を作る。In the next cleavage process, as shown in FIG. 9, one end of the wafer is scratched with a diamond point 11 or the like, and cleavage lines 9a are run by pushing the wafer one by one.
A rod-shaped wafer 10a with a cleavage plane parallel to the plane (FIG. 10)
make.
【０００６】その後、図１０に示されるように、同じく
ダイヤモンドポイント１１でキズを入れて個々のペレッ
トに分離し、図１１に示す最終的形状のＬＤペレット８
ａを得る。Thereafter, as shown in FIG. 10, the LD pellets 8 are made into individual pellets by making scratches using the same diamond point 11, and the final shape of the LD pellets 8 is shown in FIG.
get a.
【０００７】[0007]
【発明が解決しようとする課題】上述した従来の製造方
法では以下の問題点があった。まず、第１に、従来製法
では劈開を容易にするため、ウェハの膜厚を極めて薄く
するので、ウェハサイズが大きくなると取り扱い困難と
なり、またウェハ割れが起こり易くなる。[Problems to be Solved by the Invention] The conventional manufacturing method described above has the following problems. First, in the conventional manufacturing method, the film thickness of the wafer is made extremely thin in order to facilitate cleavage, so as the wafer size increases, handling becomes difficult and wafer cracking is likely to occur.
【０００８】第２に、劈開ラインを走らせる工程は自動
化、治具導入が困難であるため手作業が主となるが、こ
の作業には非常な熟練を要する。[0008] Secondly, the process of running the cleavage line is mainly manual work because it is difficult to automate or introduce jigs, and this work requires great skill.
【０００９】第３に、ピンセットによるウェハ、棒状ウ
ェハ、ペレットの取り扱い回数が多くなり、カケ不良、
キズ不良等の外観不良率が高くなる。Thirdly, wafers, bar-shaped wafers, and pellets are handled more frequently with tweezers, leading to chipping defects and
The rate of appearance defects such as scratches increases.
【００１０】0010
【課題を解決するための手段】上記問題点を解決するた
め、本発明の製造プロセスでは、■ウェハのエピタキシ
ャル層成長面側に、エッチングにより活性ストライプ領
域（レーザ発振光ガイド領域）を残してそのストライプ
と直交する方向に劈開誘引溝を掘る工程と、■ウェハ裏
面の基板側に前記劈開誘引溝に重なるように劈開補助溝
を、ダイシングソー等の機械的手段を用いて加工する工
程と、■チョコレートブレーク態様にて活性ストライプ
領域に向かって劈開線を走らせる工程と、を備えている
。[Means for Solving the Problems] In order to solve the above-mentioned problems, in the manufacturing process of the present invention: a step of digging a cleavage-inducing groove in a direction perpendicular to the stripes; ■ a step of machining a cleavage-assisting groove on the substrate side of the back side of the wafer so as to overlap the cleavage-inducing groove using a mechanical means such as a dicing saw; running a cleavage line toward the active stripe region in a chocolate break manner.
【００１１】なお、活性ストライプ領域間の分離はダイ
シングソー等の機械的分離手段を用いて行われるが、そ
の工程は上記■の工程の前または後に設定される。[0011] The active stripe regions are separated using mechanical separation means such as a dicing saw, and this step is set before or after the above step (2).
【００１２】0012
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１〜図５は本発明の第１の実施例を説明
するための斜視図と平面図である。図１に示されるレー
ザダイオードウェハ１には活性ストライプ領域２および
図示のない電極が既に形成されており、その厚さは２０
０〜５００μｍ程度である。まず、このウェハのエピタ
キシャル層成長面にフォトエッチングにより、活性スト
ライプ領域２と直交する劈開誘引溝３を形成する。この
場合に、活性ストライプ領域２の左右各１０μｍ程度は
エッチングせずに残すようにする。また、劈開誘引溝３
の形成には異方性エッチングを用いてその断面形状が逆
三角形となるようにする。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. 1 to 5 are a perspective view and a plan view for explaining a first embodiment of the present invention. The laser diode wafer 1 shown in FIG.
It is about 0 to 500 μm. First, a cleavage-inducing groove 3 perpendicular to the active stripe region 2 is formed on the epitaxial layer growth surface of this wafer by photo-etching. In this case, about 10 μm on each side of the active stripe region 2 is left unetched. In addition, cleavage inducing groove 3
Anisotropic etching is used to form the cross-sectional shape of an inverted triangle.
【００１３】次に、図２に示すように、ウェハの基板側
（裏面側）にフォトリソグラフィ工程で用いられる両面
目合わせ装置を使って、劈開誘引溝に重なるようにダイ
シング用の劈開補助溝用マーク４を形成する。また、そ
の際、活性ストライプ領域の中間にペレット分離用マー
ク５も同時に形成する。Next, as shown in FIG. 2, a double-sided alignment device used in the photolithography process is used to form cleavage auxiliary grooves for dicing on the substrate side (back side) of the wafer so as to overlap the cleavage inducing grooves. Form mark 4. At this time, pellet separation marks 5 are also simultaneously formed in the middle of the active stripe region.
【００１４】次に、図３に示すように、補助溝用マーク
４を利用し、ブレード厚２０〜３０μｍのダイシングソ
ーを使って、残りの膜厚が５０〜１００μｍとなるよう
に、基板裏面に劈開補助溝６を掘る。Next, as shown in FIG. 3, using the auxiliary groove marks 4 and a dicing saw with a blade thickness of 20 to 30 μm, the back surface of the substrate is cut so that the remaining film thickness is 50 to 100 μm. Dig a cleavage auxiliary groove 6.
【００１５】次に、図４に示すように、同様にダイシン
グソーを用いてペレット分離用マーク５に沿ってウェハ
１を分割し、棒状ウェハ７を形成する。Next, as shown in FIG. 4, the wafer 1 is similarly divided along the pellet separation marks 5 using a dicing saw to form bar-shaped wafers 7.
【００１６】次に、チョコレートを割る時のように、劈
開誘引溝３を広げる方向ａにこの棒を少し曲げ、活性ス
トライプ領域２に向かって劈開線９を走らせ、図５に示
すように個々のＬＤペレット８に分割する。この際、基
板側に粘着テープを貼り付けておきこれを利用して分割
することができる。この場合には分割と同時に粘着テー
プを少し引き伸ばすことにより、劈開面が相互にキズ付
け合うのを防止することができる。Next, as when breaking chocolate, this rod is slightly bent in the direction a to widen the cleavage inducing grooves 3, and the cleavage line 9 is run toward the active stripe region 2 to separate the individual pieces as shown in FIG. Divide into 8 LD pellets. At this time, adhesive tape can be attached to the substrate side and used to divide the substrate. In this case, by stretching the adhesive tape a little at the same time as the division, it is possible to prevent the cleaved surfaces from scratching each other.
【００１７】図６、図７は本発明の第２の実施例を説明
するための斜視図である。本実施例では、図３に示され
た段階までは第１の実施例と同様の加工がなされた後、
この状態でウェハを矢印ａの方向に曲げて劈開線９を走
らせ、劈開面を持つ棒状ウェハ１０に分割する。その後
はダイシングソーを用いて個々のペレットに分離する。FIGS. 6 and 7 are perspective views for explaining a second embodiment of the present invention. In this example, after the same processing as in the first example is performed up to the stage shown in FIG.
In this state, the wafer is bent in the direction of the arrow a, and a cleavage line 9 is run across the wafer to divide it into rod-shaped wafers 10 having cleavage planes. Thereafter, it is separated into individual pellets using a dicing saw.
【００１８】この実施例の方法は、第１の実施例に比較
して、従来の技術プロセスと工程順序が変わらないので
、追加工程（例えば劈開端面へのコーティング等）の必
要な品種に対してその追加工程に変更を加えることなく
該工程を実施できるという利点を有する。Compared to the first embodiment, the method of this embodiment does not change the process order from the conventional technology process, so it is suitable for products that require additional steps (for example, coating on cleaved end faces, etc.). This method has the advantage that this step can be carried out without changing the additional step.
【００１９】[0019]
【発明の効果】以上説明したように、本発明は、ウェハ
のエピタキシャル層成長面側に劈開誘引溝を、その裏面
に劈開補助溝を形成した後劈開を行うものであるので、
以下の効果を奏することができる。
■ウェハは全体として十分の強度を有するので、ウェハ
の割れを防止することができ、その取り扱いが容易にな
る。
■劈開はチョコレートブレーク方法にて実施できるため
、従来技術の場合のような高度の作業習熟を要しない。
■全工程にわたってピンセットによる取り扱いを排除す
ることが可能となるので、カケ不良、キズ不良等の外観
不良を大幅に低減できる。
■作業工程の自動化が容易になる。As explained above, in the present invention, cleavage is performed after forming a cleavage inducing groove on the epitaxial layer growth side of the wafer and a cleavage assisting groove on the back side of the wafer.
The following effects can be achieved. (2) Since the wafer has sufficient strength as a whole, cracking of the wafer can be prevented and its handling becomes easy. ■Since cleavage can be carried out using the chocolate break method, it does not require a high degree of skill to operate as in the case of conventional techniques. ■Since handling with tweezers can be eliminated throughout the entire process, appearance defects such as chips and scratches can be significantly reduced. ■Easier to automate work processes.
【図１】本発明の第１の実施例を説明するための斜視図
と部分平面図。FIG. 1 is a perspective view and a partial plan view for explaining a first embodiment of the present invention.
【図２】本発明の第１の実施例を説明するための斜視図
と部分平面図。FIG. 2 is a perspective view and a partial plan view for explaining a first embodiment of the present invention.
【図３】本発明の第１の実施例を説明するための斜視図
と部分平面図。FIG. 3 is a perspective view and a partial plan view for explaining the first embodiment of the present invention.
【図４】本発明の第１の実施例を説明するための斜視図
と部分平面図。FIG. 4 is a perspective view and a partial plan view for explaining the first embodiment of the present invention.
【図５】本発明の第１の実施例を説明するための斜視図
と部分平面図。FIG. 5 is a perspective view and a partial plan view for explaining the first embodiment of the present invention.
【図６】本発明の第２の実施例を説明するための斜視図
。FIG. 6 is a perspective view for explaining a second embodiment of the present invention.
【図７】本発明の第２の実施例を説明するための斜視図
。FIG. 7 is a perspective view for explaining a second embodiment of the present invention.
【図８】従来例を説明するための斜視図と部分平面図。FIG. 8 is a perspective view and a partial plan view for explaining a conventional example.
【図９】従来例を説明するための斜視図と部分平面図。FIG. 9 is a perspective view and a partial plan view for explaining a conventional example.
【図１０】従来例を説明するための斜視図。FIG. 10 is a perspective view for explaining a conventional example.
【図１１】従来例を説明するための斜視図。FIG. 11 is a perspective view for explaining a conventional example.
１、１ａ レーザダイオードウェハ
２ 活性ストライプ領域
３ 劈開誘引溝
４ 劈開補助溝用マーク
５ ペレット分離用マーク
６ 劈開補助溝
７ 棒状ウェハ
８、８ａ ＬＤペレット
９、９ａ 劈開線
１０、１０ａ 劈開面を持つ棒状ウェハ１１ ダイ
ヤモンドポイント1, 1a Laser diode wafer 2 Active stripe region 3 Cleavage inducing groove 4 Cleavage auxiliary groove mark 5 Pellet separation mark 6 Cleavage auxiliary groove 7 Rod-shaped wafer 8, 8a LD pellet 9, 9a Cleavage line 10, 10a Rod-shaped with cleavage plane Wafer 11 Diamond Point
Claims (1)
ウェハのエピタキシャル成長面を選択的にエッチングし
て活性ストライプ領域と直交する劈開誘引溝を該活性ス
トライプ領域にはかからない形状に形成する工程と、ウ
ェハ裏面に前記劈開誘引溝と重なる劈開補助溝を機械的
手段により形成する工程と、前記劈開誘引溝および劈開
補助溝の個所において劈開を行う工程と、を具備する光
半導体装置の製造方法。1. A step of selectively etching the epitaxial growth surface of a wafer in which a laser diode is formed to form a cleavage-inducing groove orthogonal to the active stripe region in a shape that does not overlap the active stripe region, and A method for manufacturing an optical semiconductor device, comprising the steps of: forming a cleavage auxiliary groove overlapping the cleavage inducing groove by mechanical means; and performing cleavage at the cleavage inducing groove and the cleavage auxiliary groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4426091A JPH04262589A (en) | 1991-02-15 | 1991-02-15 | Manufacture of optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4426091A JPH04262589A (en) | 1991-02-15 | 1991-02-15 | Manufacture of optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04262589A true JPH04262589A (en) | 1992-09-17 |
Family
ID=12686547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4426091A Pending JPH04262589A (en) | 1991-02-15 | 1991-02-15 | Manufacture of optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04262589A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027942A (en) * | 1996-04-04 | 1998-01-27 | Lucent Technol Inc | Method of making iii/v semiconductor laser |
| JPH10125994A (en) * | 1996-10-18 | 1998-05-15 | Nec Corp | Semiconductor laser device and manufacturing method thereof |
| US5780320A (en) * | 1994-10-15 | 1998-07-14 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor laser including two sets of dicing grooves |
| JP2000244068A (en) * | 1998-12-22 | 2000-09-08 | Pioneer Electronic Corp | Nitride semiconductor laser and fabrication thereof |
| JP2003017790A (en) * | 2001-07-03 | 2003-01-17 | Matsushita Electric Ind Co Ltd | Nitride-based semiconductor device and manufacturing method |
| KR100421224B1 (en) * | 2001-12-17 | 2004-03-02 | 삼성전기주식회사 | Method of isolating semiconductor laser diode |
| JP2005510089A (en) * | 2001-10-11 | 2005-04-14 | エブラナ フォトニクス リミテッド | Manufacturing method of semiconductor device |
| JP2009015039A (en) * | 2007-07-05 | 2009-01-22 | Shimadzu Corp | Method for manufacturing optical element |
| JP2009105466A (en) * | 2009-02-16 | 2009-05-14 | Sharp Corp | Nitride semiconductor wafer, and method for manufacturing of nitride semiconductor element |
| KR101019790B1 (en) * | 2005-02-18 | 2011-03-04 | 엘지전자 주식회사 | Method for fabricating a mirror of semiconductor laser diode |
| US7903709B2 (en) | 2008-01-21 | 2011-03-08 | Sanyo Electric Co., Ltd. | Semiconductor laser device and method of manufacturing the same |
| JP2012151157A (en) * | 2011-01-17 | 2012-08-09 | Hitachi Ltd | Horizontal resonator vertical emission laser, method of manufacturing the same, light receiving element, and horizontal resonator vertical emission laser array |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780320A (en) * | 1994-10-15 | 1998-07-14 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor laser including two sets of dicing grooves |
| JPH1027942A (en) * | 1996-04-04 | 1998-01-27 | Lucent Technol Inc | Method of making iii/v semiconductor laser |
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