JPH04243244A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH04243244A JPH04243244A JP3004695A JP469591A JPH04243244A JP H04243244 A JPH04243244 A JP H04243244A JP 3004695 A JP3004695 A JP 3004695A JP 469591 A JP469591 A JP 469591A JP H04243244 A JPH04243244 A JP H04243244A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- exposed
- negative type
- type resist
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 28
- 239000010931 gold Substances 0.000 description 28
- 229910052737 gold Inorganic materials 0.000 description 28
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 210000000078 claw Anatomy 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は露光装置に関する。近年
の半導体装置は１チップに含まれる素子数がますます多
くなり，それに伴い，チップの周縁部に形成されるパッ
ドの数も増大し，その間隔も縮小の傾向にある。パッド
にワイヤボンディングを行うにあたり，まずパッドにバ
ンプを形成する必要がある。通常，金めっきにより金バ
ンプが形成されるが，金めっきを行うためのマスクのパ
ターニングは高精度を要するとともに，金めっきは低コ
スト化が望まれている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus. In recent years, the number of elements included in one chip of semiconductor devices has been increasing more and more, and accordingly, the number of pads formed on the periphery of the chip has also increased, and the spacing between them has also tended to decrease. To perform wire bonding to a pad, it is first necessary to form a bump on the pad. Usually, gold bumps are formed by gold plating, but mask patterning for gold plating requires high precision, and gold plating is desired to be low-cost.
【０００２】0002
【従来の技術】図３は金バンプを形成する従来例を説明
するための図である。金バンプを形成するウエハー上に
，ネガ型レジスト３が塗布されている。金バンプ形成用
のマスクを用いて，ネガ型レジスト３に投影露光する。
その際，ネガ型レジスト３の塗布されたウエハーの周縁
部を押さえ板２により押さえ，位置合わせを行って露光
する。図３に示す露光パターン５は金バンプの形成され
る場所で，図３には模式的にその一部を示している。金
バンプの形成される場所は露光されず，露光後現像する
と露光されない部分のネガ型レジスト３が除去されて，
チップの金バンプを形成する場所だけが露出する穴が形
成される。その後，電解めっきによりその穴を金で埋め
込んで金バンプを形成する。2. Description of the Related Art FIG. 3 is a diagram for explaining a conventional example of forming gold bumps. A negative resist 3 is applied onto the wafer on which gold bumps are to be formed. The negative resist 3 is exposed by projection using a mask for forming gold bumps. At this time, the periphery of the wafer coated with the negative resist 3 is held down by the holding plate 2, and the wafer is aligned and exposed. The exposure pattern 5 shown in FIG. 3 is a place where gold bumps are formed, and a part thereof is schematically shown in FIG. The areas where the gold bumps are to be formed are not exposed, and when developed after exposure, the negative resist 3 in the unexposed areas is removed.
Holes are formed that expose only the areas of the chip where the gold bumps will be formed. Thereafter, the holes are filled with gold using electrolytic plating to form gold bumps.
【０００３】ところで，押さえ板２は通常金属製であり
，ウエハーを押さえる爪の部分２Ｂも金属材料で形成さ
れているので，その下のネガ型レジスト３は露光されな
い。したがって，露光後現像すると，爪の部分の下のネ
ガ型レジスト３は除去されてウエハーが露出し，その部
分にも金めっきが施されることになる。その場所は，も
ともと，金めっき不要の部分であるから，金を不要に消
費することになるので，まず爪があたる周縁部を予備的
に露光しておいて，それから押さえ板２でもって爪の部
分２Ｂでウエハーを押さえ，精度よく位置合わせを行っ
た後，金バンプ形成のための主パターンの露光を行うこ
とにより，金の不要な消費を避けている。By the way, the holding plate 2 is usually made of metal, and the claw portion 2B for holding the wafer is also made of a metal material, so the negative resist 3 underneath is not exposed. Therefore, when development is performed after exposure, the negative resist 3 under the nail portion is removed and the wafer is exposed, and that portion is also plated with gold. Since that area originally does not require gold plating, gold will be wasted unnecessarily. Therefore, first, the peripheral area where the nail will touch is preliminary exposed, and then the nail is plated with the holding plate 2. After holding the wafer in the portion 2B and performing accurate alignment, the main pattern for forming gold bumps is exposed, thereby avoiding unnecessary consumption of gold.
【０００４】0004
【発明が解決しようとする課題】しかし，従来の方法は
露光を２度行う必要があり，工程がかかり過ぎる。押さ
え板を用いなければ１回の露光ですむが，押さえ板２を
用いないとウエハーの支持が不安定になって精度のよい
位置合わせができない。[Problems to be Solved by the Invention] However, in the conventional method, it is necessary to perform exposure twice, which takes too many steps. If the holding plate 2 is not used, only one exposure is required, but if the holding plate 2 is not used, the wafer support becomes unstable and accurate positioning cannot be performed.
【０００５】本発明は上記の問題に鑑み，押さえ板２を
使用して，しかも１回の露光で済む露光装置を提供する
ことを目的とする。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide an exposure apparatus that uses a holding plate 2 and that only requires one exposure.
【０００６】[0006]
【課題を解決するための手段】図１は本発明の露光装置
を説明するための図，図２は実施例を説明するための図
であり，１はウエハー，２は押さえ板，２Ａは爪の部分
でウエハー１を押さえる部分，３はネガ型レジスト，４
は投影露光マスク，５は露光パターン，６はウエハーチ
ャックを表す。[Means for Solving the Problems] FIG. 1 is a diagram for explaining an exposure apparatus of the present invention, and FIG. 2 is a diagram for explaining an embodiment, in which 1 is a wafer, 2 is a holding plate, and 2A is a nail. The part that holds the wafer 1, 3 is the negative resist, 4 is the part that holds the wafer 1,
5 represents a projection exposure mask, 5 represents an exposure pattern, and 6 represents a wafer chuck.
【０００７】上記課題は，ウエハー１を露光する側から
押さえる押さえ板２を有し， 該押さえ板２が該ウエハ
ー１を押さえる部分２Ａは，光を透過する材料からなる
露光装置によって解決される。[0007] The above problem can be solved by an exposure device that has a holding plate 2 that presses the wafer 1 from the side to be exposed, and the portion 2A of the holding plate 2 that presses the wafer 1 is made of a material that transmits light.
【０００８】[0008]
【作用】押さえ板２がウエハー１を押さえる部分２Ａは
光が透過する材料からなるから，その部分のネガ型レジ
ストも露光され，現像後その部分が抜けることがなくな
る。したがって，本露光装置を用いれば，必要とする露
光パターンのみを形成することができる。本露光装置を
ネガ型レジストを用いる金バンプ形成に適用すれば，１
回の露光で済み，しかも金を不要に消費することもない
。[Operation] Since the portion 2A where the holding plate 2 presses the wafer 1 is made of a material that transmits light, the negative resist in that portion is also exposed to light, so that the portion does not come off after development. Therefore, by using this exposure apparatus, only the necessary exposure patterns can be formed. If this exposure system is applied to gold bump formation using negative resist, 1
Only one exposure is required, and money is not wasted unnecessarily.
【０００９】[0009]
【実施例】本発明の露光装置により，金バンプ形成のた
めの露光を行う例について図１及び図２を参照しながら
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of exposure for forming gold bumps using the exposure apparatus of the present invention will be described with reference to FIGS. 1 and 2.
【００１０】厚さ３０μｍのネガ型レジスト３が形成さ
れたウエハー１をウエハーチャック６上に載置し，ウエ
ハー１の周縁部を押さえ板２の爪の部分２Ａで露光する
側から押さえる。押さえ板２は金属製で，爪の部分２Ａ
だけは石英からなっている。A wafer 1 on which a negative resist 3 having a thickness of 30 μm has been formed is placed on a wafer chuck 6, and the peripheral edge of the wafer 1 is pressed by the claw portion 2A of the holding plate 2 from the side to be exposed. The holding plate 2 is made of metal, and the claw part 2A
The only part is made of quartz.
【００１１】投影露光マスク４は，金パンプを形成する
露光を行うマスクで，金パンプを形成する部分が不透明
で，その他の部分は透明なパターンを持っている。露光
光は光学系（図示せず）により平行光線となっており，
投影露光マスク４のパターンが原寸大でネガ型レジスト
３に転写露光される。投影露光マスク４と金バンプを形
成すべきウエハー１を正確に位置合わせする。投影露光
マスク４の金パンプのパターンは，例えば７０μｍ×１
００ μｍの矩形が １１０μｍのピッチで並んでいる
。このパターンはネガ型レジスト３に転写露光され，現
像により，その部分だけが除去されてウエハー１の表面
に達する穴が形成される。この穴は丁度チップの周縁部
に並ぶパッドを露出するように開けられる。爪の部分２
Ａは透明なので，その下のネガ型レジスト３も露光され
，そこのネガ型レジスト３は現像後も残る。[0011] The projection exposure mask 4 is a mask for performing exposure to form gold pumps, and has an opaque pattern in the part where the gold pumps are to be formed, and a transparent pattern in other parts. The exposure light is made into parallel rays by an optical system (not shown).
The pattern of the projection exposure mask 4 is transferred and exposed to the negative resist 3 in its original size. The projection exposure mask 4 and the wafer 1 on which gold bumps are to be formed are accurately aligned. The gold pump pattern of the projection exposure mask 4 is, for example, 70 μm×1
00 μm rectangles are lined up at a pitch of 110 μm. This pattern is transferred onto the negative resist 3 and exposed, and through development, only that portion is removed to form a hole that reaches the surface of the wafer 1. This hole is drilled just to expose the pads that line the periphery of the chip. nail part 2
Since A is transparent, the negative resist 3 below it is also exposed, and the negative resist 3 there remains even after development.
【００１２】したがって，ネガ型レジスト３にはパッド
の場所だけに穴が開けられていることになる。電解めっ
きによりその穴からウエハー１のパッドの部分に金めっ
きを行い，厚さ約２５μｍの金バンプを形成した。Therefore, holes are made in the negative resist 3 only at the pad locations. Gold plating was performed on the pad portion of the wafer 1 through the hole by electrolytic plating to form a gold bump with a thickness of about 25 μm.
【００１３】その後，ネガ型レジスト３を専用の剥離液
により除去した。以上，金バンプを形成する例について
述べたが，本発明の露光装置はネガ型レジストを用いる
パターニング工程に，効果的に使用することができる。Thereafter, the negative resist 3 was removed using a special stripping solution. Although the example of forming gold bumps has been described above, the exposure apparatus of the present invention can be effectively used in a patterning process using a negative resist.
【００１４】なお，爪の部分２Ａの材料は石英に限らず
透明な樹脂を使用してもよい。[0014] The material of the claw portion 2A is not limited to quartz, but transparent resin may also be used.
【００１５】[0015]
【発明の効果】以上説明したように，本発明によれば，
１回の露光でウエハー上の金バンプを形成する場所のみ
に位置精度よく金バンプを形成することができるので，
金を不要に消費することもなく，工程がふえることもな
い。[Effect of the invention] As explained above, according to the present invention,
Gold bumps can be formed with high positional accuracy only at the locations on the wafer where gold bumps are to be formed in one exposure.
There is no need to waste money or increase the number of processes.
【００１６】本発明は特に半導体装置の製造コスト削減
に寄与するものである。The present invention particularly contributes to reducing manufacturing costs of semiconductor devices.
【図１】本発明の露光装置を説明するための図である。FIG. 1 is a diagram for explaining an exposure apparatus of the present invention.
【図２】実施例を説明するための図である。FIG. 2 is a diagram for explaining an example.
【図３】従来例を説明するための図である。FIG. 3 is a diagram for explaining a conventional example.
１はウエハー
２は押さえ板
２Ａは爪の部分でありウエハーを押さえる部分であって
透明材料
２Ｂは爪の部分でありウエハーを押さえる部分であって
金属材料
３はネガ型レジスト
４は投影露光マスク
５は露光パターン
６はウエハーチャック1 is a wafer 2 is a holding plate 2A is a claw part and is a part to hold the wafer; transparent material 2B is a claw part and is a part to hold the wafer; metal material 3 is a negative resist 4 is a projection exposure mask 5 Exposure pattern 6 is wafer chuck
Claims (1)
さえる押さえ板（２） を有し， 該押さえ板（２）
が該ウエハー（１） を押さえる部分（２Ａ）は，光を
透過する材料からなることを特徴とする露光装置。[Claim 1] A holding plate (2) for holding down the wafer (1) from the side to be exposed, the holding plate (2)
An exposure apparatus characterized in that a portion (2A) that holds the wafer (1) is made of a material that transmits light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3004695A JPH04243244A (en) | 1991-01-18 | 1991-01-18 | Aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3004695A JPH04243244A (en) | 1991-01-18 | 1991-01-18 | Aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04243244A true JPH04243244A (en) | 1992-08-31 |
Family
ID=11591025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3004695A Withdrawn JPH04243244A (en) | 1991-01-18 | 1991-01-18 | Aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04243244A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7282665B2 (en) * | 2002-10-02 | 2007-10-16 | Leister Process Technologies | Method and apparatus for processing articles with a laser beam |
-
1991
- 1991-01-18 JP JP3004695A patent/JPH04243244A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7282665B2 (en) * | 2002-10-02 | 2007-10-16 | Leister Process Technologies | Method and apparatus for processing articles with a laser beam |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |