JPH0424312B2 - - Google Patents
Info
- Publication number
- JPH0424312B2 JPH0424312B2 JP57112402A JP11240282A JPH0424312B2 JP H0424312 B2 JPH0424312 B2 JP H0424312B2 JP 57112402 A JP57112402 A JP 57112402A JP 11240282 A JP11240282 A JP 11240282A JP H0424312 B2 JPH0424312 B2 JP H0424312B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- oxide
- ceramic member
- oxygen
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 239000000919 ceramic Substances 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 229910052575 non-oxide ceramic Inorganic materials 0.000 claims description 16
- 239000011225 non-oxide ceramic Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000006023 eutectic alloy Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OMSFUHVZHUZHAW-UHFFFAOYSA-N [Ag].[Mo] Chemical compound [Ag].[Mo] OMSFUHVZHUZHAW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- -1 etc. alone Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、セラミツク部材に金属を直接接合す
る方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a method for directly bonding metal to a ceramic member.
（従来の技術とその課題）
従来よりアルミナ等のセラミツク部材に金属を
接合する方法としては、例えばセラミツク部材表
面にモリブデンペーストを焼付けてメタライズ処
理を施した後、ニツケルメツキを行なつて金属を
ろう付けする方法がとられている。この方法はセ
ラミツクが酸化物の場合に適用されるが、セラミ
ツクが酸化物以外、例えば窒化物の場合は金属と
セラミツク部材の一方を凸状、地方を凹状にして
焼きばめすることにより行われている。これらの
方法のうち前者の方法では、作業工程が複雑なう
え少なくとも２回の熱処理が必要であるという難
点があり、後者の方法で締付力のみで接合してい
るため接合が弱いという難点があつた。(Prior art and its problems) Conventional methods for joining metal to ceramic members such as alumina include, for example, baking molybdenum paste onto the surface of the ceramic member to perform metallization treatment, then performing nickel plating and brazing the metal. A method is being adopted to do so. This method is applied when the ceramic is an oxide, but if the ceramic is a material other than an oxide, for example a nitride, the metal and ceramic members are shrink-fitted by making one side convex and the other side concave. ing. Among these methods, the former method has the disadvantage that the work process is complicated and requires at least two heat treatments, while the latter method has the disadvantage that the bond is weak because it is bonded only by tightening force. It was hot.
このような難点を解消するため、近年、セラミ
ツク部材に金属を直接接合させる方法が検討され
ており、例えばセラミツク部材に金属を接触させ
て酸素等の結合剤を含むガス雰囲気中で加熱する
方法、酸素等の結合剤で金属を表面処理し、これ
をセラミツク部材に接触させて不活性ガス雰囲気
中で加熱する方法等が知られている。 In order to overcome these difficulties, methods of directly bonding metal to ceramic members have been studied in recent years, such as methods of bringing metal into contact with ceramic members and heating in a gas atmosphere containing a binder such as oxygen; A method is known in which the surface of a metal is treated with a binder such as oxygen, and the metal is brought into contact with a ceramic member and heated in an inert gas atmosphere.
しかしながら、これらの方法なセラミツク部材
としてAl2O3等の酸化物系セラミツクを対象とし
ており、セラミツク部材が結合剤をまつたく含ま
ないか、あるいはわずかしか含まない非酸化物系
セラミツクで形成されている場合は、金属との接
合が非常に困難になるという難点があつた。すな
わち、原理的には金属表面のセラミツク部材との
接触面に酸素を含有しておりこの酸素を含む金属
酸化物と金属とが共晶合金を形成して直接接合が
可能であるが、結合剤が酸素の場合でセラミツク
が窒化ケイ素、窒化アルミニウム、窒化チタン等
の非酸化物系セラミツクでは接合が実際には困難
になるのである。 However, these methods target oxide-based ceramics such as Al 2 O 3 as ceramic members, and the ceramic members are formed of non-oxide-based ceramics that do not contain any binder or contain only a small amount of binder. If there is a metal, it becomes extremely difficult to bond it to metal. In other words, in principle, the contact surface of the metal surface with the ceramic member contains oxygen, and the metal and the oxygen-containing metal oxide form a eutectic alloy, allowing direct bonding. In the case where oxygen is present and the ceramic is a non-oxide ceramic such as silicon nitride, aluminum nitride, titanium nitride, etc., bonding is actually difficult.
この考えられる原因としては、セラミツク部材
と金属との界面に生成される金属と金属酸化物と
の共晶が非酸化物系セラミツク部材に対しては濡
れ性が悪いことおよびセラミツク部材中の酸素が
何らかの形で金属と安定な化合物を生成するうえ
で寄与をしていることがあげられる。 Possible causes of this are that the eutectic between the metal and metal oxide that is generated at the interface between the ceramic component and the metal has poor wettability with respect to non-oxide ceramic components, and that the oxygen in the ceramic component is It can be said that it contributes in some way to the formation of stable compounds with metals.
本発明者らは、このような問題に対処して鋭意
研究を進めた結果、セラミツク部材を酸化処理し
て表面に20μｍ以下の酸化層を形成させることに
より、酸素等の結合剤をほとんど含有しない非酸
化物系セラミツク部材であつても金属と直接接合
することが可能であることを見出した。 The inventors of the present invention have carried out intensive research to address these problems, and have found that by oxidizing the ceramic member and forming an oxide layer of 20 μm or less on the surface, it contains almost no binder such as oxygen. We have discovered that even non-oxide ceramic members can be directly bonded to metal.
本発明はこのような知見に基づいてなされたも
ので、セラミツク部材が酸化等の結合剤をほとん
ど含まない非酸化物系セラミツク部材であつて
も、金属と直接接合することのできるセラミツク
部材と金属との接合方法を提供することを目的と
する。 The present invention has been made based on such knowledge, and even if the ceramic member is a non-oxide ceramic member that contains almost no binder such as oxidation, it is possible to bond the ceramic member directly to the metal. The purpose is to provide a method for joining.
［発明の構成］
（課題を解決するための手段）
すなわち本発明のセラミツク部材と金属との接
続方法は、非酸化物系セラミツク部材を酸化処理
してその表面に20μｍ以下の酸化層を形成した
後、この層に少なくとも接触面が酸素を含有する
金属を接触させて、前記金属の触点以下でかつ前
記金属と金属酸化物との共晶合金の共晶温度以上
の温度に加熱することを特徴としている。[Structure of the Invention] (Means for Solving the Problems) That is, the method of connecting a ceramic member and a metal according to the present invention involves oxidizing a non-oxide ceramic member to form an oxide layer of 20 μm or less on its surface. After that, this layer is brought into contact with a metal whose contact surface contains at least oxygen, and heated to a temperature below the contact point of the metal and above the eutectic temperature of the eutectic alloy of the metal and the metal oxide. It is a feature.
本発明に適用されるセラミツク部材としては、
窒化ケイ素、窒化アルミニウム、窒化チタン等の
窒化物、炭化ケイ素、炭化チタン等の炭化物また
はホウ化ランタン等のホウ化物等の非酸化物系セ
ラミツクであり、これらには酸化イツトリウム等
の焼結助剤等が含まれていてもよい。 Ceramic members applicable to the present invention include:
These are non-oxide ceramics such as nitrides such as silicon nitride, aluminum nitride, and titanium nitride, carbides such as silicon carbide and titanium carbide, and borides such as lanthanum boride, and these include sintering aids such as yttrium oxide. etc. may be included.
本発明方法は非酸化物系セラミツク部材内に結
合剤成分を含有しなか、あるいはわすがしか含有
しない場合に特に効果的である。 The method of the present invention is particularly effective when the non-oxide ceramic component contains no or only a binder component.
本発明に使用する結合剤としての酸素は、金属
酸化物を形成し、金属との間に共晶合金を生成す
るものである。金属が銅、鉄、クロムの場合は、
特に結合剤としては酸素が適している。 Oxygen used as a binder in the present invention forms metal oxides and forms eutectic alloys with metals. If the metal is copper, iron, or chromium,
Oxygen is particularly suitable as a binder.
本発明に適用される金属としては、銅、鉄、ク
ロム、ニツケル、モリブテン銀、コバルト、アル
ミニウム等の単体、合金あるいは混合物があげら
れ、その形状は柱状、板状等の有形状のもののほ
か箔状、粒状であつてもよい。 Metals applicable to the present invention include copper, iron, chromium, nickel, silver molybdenum, cobalt, aluminum, etc. alone, alloys, or mixtures, and their shapes include columnar, plate-like, and other tangible shapes, as well as foils. It may be granular or granular.
本発明においては、金属中に結合剤として酸素
を100〜2000ppm含有する金属の使用が好ましく、
その理由は接合がより容易になることによる。例
えば金属が銅で結合剤が酸素の場合は銅として、
タフピツチ電解銅を使用したほうが好ましい。あ
るいは金属をあらかじめ酸化処理し、表面に200
〜5000Åの酸化層を形成したものを使用すれば同
様に接合が容易になる。 In the present invention, it is preferable to use a metal containing 100 to 2000 ppm of oxygen as a binder,
The reason is that joining becomes easier. For example, if the metal is copper and the binder is oxygen, it will be treated as copper.
It is preferable to use tough pitch electrolytic copper. Alternatively, the metal can be oxidized in advance and the surface can be coated with 200%
If a material with an oxide layer of ~5000 Å is used, bonding becomes easy as well.
本発明方法は、まず非酸化物系セラミツク部材
表面に結合剤として酸素を含有する層が20μｍ以
下の厚さで形成されるようセラミツク部材を酸化
処理する。これは、例えばセラミツク部材が窒化
物で結合剤が酸素の場合、セラミツク部材を空気
中で1000〜1400℃に加熱、あるいはウエツトフオ
ーミングガス（H2＋N2）中で1250〜1500℃に加
熱して酸化処理を行うことにより容易になされ
る。この温度より低いと接合に必要な酸化層が形
成されず、この温度より高いと酸化層が分離して
剥離してしまう。なお、空気中での加熱は低温で
結合剤層（酸化層）を形成することができ、フエ
ーミングガス中での加熱は緻密な結合剤層（酸素
層）が形成されるという利点がある。この酸化層
は、実用的には20μｍ程度迄、好ましく10μｍ以
下がよい。結合剤層の効果は、0.001μｍ程度から
現れる。 In the method of the present invention, first, a ceramic member is oxidized so that a layer containing oxygen as a binder is formed on the surface of the non-oxide ceramic member to a thickness of 20 μm or less. For example, if the ceramic part is made of nitride and the binder is oxygen, the ceramic part is heated to 1000-1400°C in air, or heated to 1250-1500°C in wet forming gas (H 2 + N 2 ). This can be easily done by performing an oxidation treatment. If the temperature is lower than this, the oxide layer necessary for bonding will not be formed, and if the temperature is higher than this, the oxide layer will separate and peel off. Note that heating in air can form a binder layer (oxidized layer) at a low temperature, and heating in forming gas has the advantage that a dense binder layer (oxygen layer) can be formed. Practically speaking, this oxide layer has a thickness of up to about 20 μm, preferably 10 μm or less. The effect of the binder layer appears from about 0.001 μm.
次に、非酸化物系セラミツク部材の酸化処理さ
れた面を接触配置させて加熱する。加熱温度は、
金属の触点以下でかつ金属と金属酸化物との共晶
合金の共晶温度以上が適している。例えば金属が
銅で結合剤が酸素の場合は、銅の融点（1083℃）
以下、銅−酸化銅の共晶温度（1065℃）以上であ
る。加熱に際しては金属として酸素を含有するも
のあるいは酸化処理したものを使用した場合は、
金属、酸素、セラミツク部材に対して不活性ガス
雰囲気中、例えば窒素ガス雰囲気中で加熱するの
が好ましい。 Next, the oxidized surfaces of the non-oxide ceramic members are placed in contact with each other and heated. The heating temperature is
A temperature below the contact point of the metal and above the eutectic temperature of the eutectic alloy of the metal and metal oxide is suitable. For example, if the metal is copper and the binder is oxygen, the melting point of copper (1083℃)
Below, the temperature is higher than the eutectic temperature of copper-copper oxide (1065°C). If a metal that contains oxygen or has been oxidized is used for heating,
It is preferable to heat metal, oxygen, and ceramic members in an inert gas atmosphere, such as a nitrogen gas atmosphere.
（作 用）
本発明においては、酸素を含まないか、あるい
はほとんど含まない非酸化物系セラミツク部材に
対して、予め酸化処理を施しその表面に20μｍ以
下の酸化層を形成している。そして、この酸化層
上に少なくとも接触面に酸素を含有する金属を接
触配置し、金属の融点以下でかつ金属と金属酸化
物との共晶合金の共晶温度以上の温度に加熱する
ことによつて、非酸化物系セラミツク部材と金属
との間に、これらの接合に充分な共晶液相を形成
し、これによつて非酸化物系セラミツク部材と金
属とを容易に直接接合することを可能にしてい
る。(Function) In the present invention, a non-oxide ceramic member that does not contain oxygen or contains almost no oxygen is subjected to an oxidation treatment in advance to form an oxidized layer of 20 μm or less on its surface. Then, a metal containing oxygen is placed in contact with at least the contact surface on this oxide layer, and heated to a temperature below the melting point of the metal and above the eutectic temperature of the eutectic alloy of the metal and metal oxide. Therefore, it is possible to form a eutectic liquid phase sufficient for bonding between the non-oxide ceramic member and the metal, thereby easily directly bonding the non-oxide ceramic member and the metal. making it possible.
（実施例） 次に、発明の実施例について説明する。(Example) Next, embodiments of the invention will be described.
実施例
焼結助剤として酸化イツトリウムと酸化アルミ
ニウムとを４重量％含有する窒化ケイ素で形成さ
れた30mm×30mm×２mmの板状セラミツク部材を空
気中で1150℃の温度で１時間加熱を行なつた。セ
ラミツク部材の表面はやや白くなつていた。この
セラミツク部材の上面に10mm×50mm×0.3mmのタ
フピツチ電解銅からなる板状金属を接触させて窒
素ガス雰囲気中で1075℃で加熱した。ほぼ室温ま
で冷却して接合状態を調べたところ強固な接合が
得られていた。Example: A 30 mm x 30 mm x 2 mm plate-shaped ceramic member made of silicon nitride containing 4% by weight of yttrium oxide and aluminum oxide as sintering aids was heated in air at a temperature of 1150°C for 1 hour. Ta. The surface of the ceramic member was slightly white. A metal plate made of tough pitch electrolytic copper measuring 10 mm x 50 mm x 0.3 mm was brought into contact with the upper surface of this ceramic member and heated at 1075°C in a nitrogen gas atmosphere. When the bonding condition was examined after cooling to approximately room temperature, a strong bond was obtained.
比較例 １
実施例において非酸化物系セラミツク部材の加
熱温度の1150℃を1500℃に上げた以外は同様にし
て熱処理した後タフピツチ電解銅と接合されたと
ころ、セラミツク部材の表面層部分で剥れが生じ
た。これはセラミツク部材の酸化処理温度が高す
ぎて酸化層として分離したためであると考えられ
る。Comparative Example 1 When the non-oxide ceramic member was heat-treated in the same manner as in Example except that the heating temperature of 1150°C was increased to 1500°C and then joined with Tough Pitch electrolytic copper, the surface layer of the ceramic member peeled off. occurred. This is thought to be because the oxidation treatment temperature of the ceramic member was too high and the ceramic member was separated as an oxide layer.
比較例 ２
実施例で使用した非酸化物系セラミツク部材を
空気中で加熱しないでそのままタフピツチ電解銅
と接触し、加熱したところは接合は不充分であつ
た。Comparative Example 2 The non-oxide ceramic member used in the example was brought into contact with Tough Pitch electrolytic copper without being heated in the air, and when heated, the bonding was insufficient.
［発明の効果］
以上説明したように本発明方法によれば、結合
剤を含有しない非酸化物系セラミツク部材であつ
ても簡便に金属と直接結合することができ、半導
体マウント基板や電子管外囲器、整流素子外囲器
等の製造に有効である。[Effects of the Invention] As explained above, according to the method of the present invention, even non-oxide ceramic members that do not contain a binder can be easily and directly bonded to metal, and can be used for semiconductor mounting substrates and electron tube outer enclosures. It is effective for manufacturing rectifiers, rectifying device envelopes, etc.
Claims (1)
の表面に20μｍ以下の酸化層を形成した後、この
酸化層に少なくとも接触面に酸素を含有する金属
を接触させて、前記金属の融点以下でかつ前記金
属と金属酸化物との共晶合金の共晶温度以上の温
度に加熱することを特徴とするセラミツク部材と
金属との接合方法。 ２ 加熱は不活性ガス雰囲気中で行なわれる特許
請求の範囲第１項記載のセラミツク部材と金属と
の接合方法。[Scope of Claims] 1. After a non-oxide ceramic member is oxidized to form an oxide layer of 20 μm or less on its surface, an oxygen-containing metal is brought into contact with at least the contact surface of the oxide layer, and the A method for joining a ceramic member and a metal, the method comprising heating to a temperature below the melting point of the metal and above the eutectic temperature of a eutectic alloy of the metal and a metal oxide. 2. The method of joining a ceramic member and metal according to claim 1, wherein the heating is performed in an inert gas atmosphere.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11240282A JPS593077A (en) | 1982-06-29 | 1982-06-29 | Method of bonding ceramic member and metal |
| DE8383106245T DE3376829D1 (en) | 1982-06-29 | 1983-06-27 | Method for directly bonding ceramic and metal members and laminated body of the same |
| EP83106245A EP0097944B1 (en) | 1982-06-29 | 1983-06-27 | Method for directly bonding ceramic and metal members and laminated body of the same |
| US06/697,874 US4693409A (en) | 1982-06-29 | 1985-02-04 | Method for directly bonding ceramic and metal members and laminated body of the same |
| US07/041,335 US4849292A (en) | 1982-06-29 | 1987-04-22 | Method for directly bonding ceramic and metal members and laminated body of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11240282A JPS593077A (en) | 1982-06-29 | 1982-06-29 | Method of bonding ceramic member and metal |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32571489A Division JPH02199075A (en) | 1989-12-15 | 1989-12-15 | Joined product of ceramic and metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS593077A JPS593077A (en) | 1984-01-09 |
| JPH0424312B2 true JPH0424312B2 (en) | 1992-04-24 |
Family
ID=14585753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11240282A Granted JPS593077A (en) | 1982-06-29 | 1982-06-29 | Method of bonding ceramic member and metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593077A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190279A (en) * | 1983-04-13 | 1984-10-29 | 株式会社東芝 | Ceramic structure and manufacture |
| JPS60171277A (en) * | 1984-02-17 | 1985-09-04 | 株式会社東芝 | Metal-ceramic bonded body |
| JPS6132752A (en) * | 1984-07-25 | 1986-02-15 | 松下電工株式会社 | Manufacture of ceramics circuit board |
| JPS61291463A (en) * | 1985-06-17 | 1986-12-22 | 日本特殊陶業株式会社 | Material for high toughness ceramic tool |
| JP3011433B2 (en) * | 1990-05-25 | 2000-02-21 | 株式会社東芝 | Manufacturing method of ceramic circuit board |
| US5863113A (en) * | 1993-06-22 | 1999-01-26 | Mitsubishi Rayon Co., Ltd. | Plane light source unit |
| JP2764711B2 (en) * | 1996-07-10 | 1998-06-11 | 株式会社オーデン | Air cleaner |
| JP2001168250A (en) * | 1999-12-10 | 2001-06-22 | Sumitomo Electric Ind Ltd | Insulating substrate for semiconductor device, semiconductor device using that and manufacturing method of substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5075208A (en) * | 1973-11-07 | 1975-06-20 | ||
| JPS5237914A (en) * | 1975-07-30 | 1977-03-24 | Gen Electric | Method of directly combining metal to ceramics and metal |
| JPS58145669A (en) * | 1982-02-18 | 1983-08-30 | 株式会社明電舎 | Method of bonding ceramics to copper |
-
1982
- 1982-06-29 JP JP11240282A patent/JPS593077A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5075208A (en) * | 1973-11-07 | 1975-06-20 | ||
| JPS5237914A (en) * | 1975-07-30 | 1977-03-24 | Gen Electric | Method of directly combining metal to ceramics and metal |
| JPS58145669A (en) * | 1982-02-18 | 1983-08-30 | 株式会社明電舎 | Method of bonding ceramics to copper |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS593077A (en) | 1984-01-09 |
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