JPH04209689A - Insulating paste - Google Patents
Insulating pasteInfo
- Publication number
- JPH04209689A JPH04209689A JP40462390A JP40462390A JPH04209689A JP H04209689 A JPH04209689 A JP H04209689A JP 40462390 A JP40462390 A JP 40462390A JP 40462390 A JP40462390 A JP 40462390A JP H04209689 A JPH04209689 A JP H04209689A
- Authority
- JP
- Japan
- Prior art keywords
- insulating
- oligomer
- powders
- polyhydric alcohol
- alcohol compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims abstract description 15
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000002940 repellent Effects 0.000 claims abstract description 6
- 239000005871 repellent Substances 0.000 claims abstract description 6
- 230000007062 hydrolysis Effects 0.000 abstract description 5
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 5
- -1 halogen ions Chemical class 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 229910052580 B4C Inorganic materials 0.000 abstract description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract description 2
- 229910052790 beryllium Inorganic materials 0.000 abstract description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 229910052575 non-oxide ceramic Inorganic materials 0.000 abstract description 2
- 239000011225 non-oxide ceramic Substances 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 4
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000005062 Polybutadiene Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920002857 polybutadiene Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- AODKDNSWTJMJLU-UHFFFAOYSA-N 3-hydroxyiminobutanoic acid Chemical compound ON=C(C)CC(O)=O AODKDNSWTJMJLU-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Abstract
Description
［０００１１ [00011
【産業上の利用分野］本発明は、半導体装置の組立て（
アッセンブ１月や各種部品等の絶縁接着に使用する絶縁
性ペーストに関し、特に半導体ペレットの大型化と高絶
縁性の要求に対応して改良されたものである。
［０００２］
【従来の技術】金属薄板（リードフレーム）上の所定部
分にＩＣ，ＬＳＩ半導体チップを接着する工程は、半導
体装置の長期信頼性に影響を与える重要な工程の一つで
ある。従来からこの接続方法としてチップのシリコン面
をリードフレーム上の金メツキ面に加圧圧着するという
Ａｕ−３ｉ共晶法が主流であった。しかし、近年の貴金
属、特に金の高騰を契機として、樹脂封止型半導体装置
ではＡｕ−３ｉ共晶法から半田を使用する方法、絶縁性
接着剤を使用する方法等に急速に移行しつつある。
［０００３］Ｌかしながら、半田を使用する方法は、−
部実用化されているが半田や半田ボールが飛散して電極
等に付着し、腐食断線の原因となることが指摘されてい
る。一方、絶縁性接着剤を使用する方法では、通常エポ
キシ樹脂が用いられ、約１０年前から一部実用化されて
きたが、信頼性の面でＡｕ−５ｉ共晶法に比較して満足
すべきものが得られなかった。絶縁性接着剤を使用する
場合は、半田法に比べて耐熱性に優れる等の長所を有し
ているが、その反面、樹脂や硬化剤が半導体素子用接着
剤として作られたものでないため、ボイドの発生や、耐
湿性、耐加水分解性に劣り、アルミニウム電極の腐食を
促進し、断線不良の原因となることが多く、素子の信頼
性はＡｕ−３ｉ共晶法に比較して劣っていた。また、近
年、ＩＣ，ＬＳＩやＬＥＤ等の半導体チップの大型化と
ワイヤボンディングなどプロセス処理条件などの高温化
に伴い、チップクラックの発生やチップ反り、接着力の
低下がおこり、問題となっていた。
［０００４］[Industrial Field of Application] The present invention is applicable to the assembly of semiconductor devices (
The insulating paste used for assembling and insulating bonding of various parts, etc., has been improved in particular to meet the demands for larger semiconductor pellets and higher insulation properties. [0002] BACKGROUND OF THE INVENTION The process of bonding an IC or LSI semiconductor chip to a predetermined portion of a thin metal plate (lead frame) is one of the important processes that affects the long-term reliability of a semiconductor device. Conventionally, the mainstream connection method has been the Au-3i eutectic method, in which the silicon surface of the chip is pressure-bonded to the gold-plated surface of the lead frame. However, with the rise in the price of precious metals, especially gold, in recent years, resin-encapsulated semiconductor devices are rapidly shifting from the Au-3i eutectic method to methods that use solder, insulating adhesives, etc. . [0003] The method of using solder while using L is -
However, it has been pointed out that solder and solder balls scatter and adhere to electrodes, etc., causing corrosion and disconnection. On the other hand, in the method using insulating adhesive, epoxy resin is usually used and has been partially put into practical use for about 10 years, but it is not as satisfactory as the Au-5i eutectic method in terms of reliability. I couldn't get a kimono. When using an insulating adhesive, it has advantages such as superior heat resistance compared to the soldering method, but on the other hand, the resin and curing agent are not made as adhesives for semiconductor devices. The reliability of the device is inferior to that of the Au-3i eutectic method due to the generation of voids, poor moisture resistance, and poor hydrolysis resistance, which promotes corrosion of aluminum electrodes and often causes disconnection defects. Ta. In addition, in recent years, as semiconductor chips such as ICs, LSIs, and LEDs have become larger and processing conditions such as wire bonding have become hotter, chip cracks, chip warping, and reduced adhesive strength have occurred, which has become a problem. . [0004]
【発明が解決しようとする課題】本発明は、上記の事情
に鑑みてなされたもので、高絶縁性であって耐湿性、耐
加水分解性、接着性に優れ、特に半導体チップの大型化
とプロセス条件の高温化に対応してチップの反りの少な
い高信頼性の絶縁性ペーストを提供することを目的とし
ている。
［０００５］[Problems to be Solved by the Invention] The present invention has been made in view of the above-mentioned circumstances. The objective is to provide a highly reliable insulating paste with less chip warpage in response to high-temperature process conditions. [0005]
【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、耐湿性、耐加
水分解性、接着性に優れるとともにボイドの発生がなく
、半導体チップの大型化と高絶縁性に対応して信頼性の
高い絶縁性ペーストが得られることを見いだし、本発明
を完成したものである。
［０００６］すなわち、本発明は、
（Ａ）ウレタンポリマーまたはウレタンオリゴマー（Ｂ
）多価アルコール化合物、
（Ｃ）撥水剤及び
（Ｄ）絶縁性粉末
を必須成分とすることを特徴とする絶縁性ペーストであ
る。
［０００７］以下、本発明の詳細な説明する。
［０００８１本発明に用いる（Ａ）ウレタンポリマーま
たはウレタンオリゴマーとしては、ウレタンを形成する
プレポリマーおよびオリゴマーのすべてのものが使用可
能であるが、末端活性イソシアネート基を活性水素化合
物でブロック化したブロックイソシアネートプレポリマ
ーが好ましく使用される。代表的なものとしては、末端
活性イソシアネートを有するポリエステルまたはポリブ
タジェンをアセト酢酸エステルオキシム、或いはフェノ
ール等のブロッキング剤でブロック化したものである。
具体的なものとしては、デスモジュールＡＰステーブル
（バイエル社製、商品名）、ニーロックＱ−９０６２（
出光石油化学社製、商品名）等が挙げられ、これらは単
独又は２種以上混合して使用することができる。これら
のブロック化されたウレタンのポリマーまたはオリゴマ
ーは室温で安定であるが１２０℃以上に加熱するとイソ
シアネート基を解離する性質をもっている。
［０００９］本発明に用いる（Ｂ）多価アルコール化合
物としては、可撓性、柔軟性を考慮して長鎖のアルキル
基を有するものや、ポリエステル系、ポリブタジェン系
およびシリコーン系多価アルコール類が使用される。具
体的なものとしては、Ｒ−４５ＨＴ （出光石油化学社
製、商品名）、三洋化成社製のポリエチレングリコール
、ポリプロピレングリコール、トーレシリコーン社製の
アルコール変性シリコーンＢＹシリーズ等が挙げられ、
これらは単独又は２種以上混合して使用される。これら
の多価アルコール類の水酸基は、前述したウレタンポリ
マーやオリゴマーから解離したイソシアネート基と反応
する。ウレタンプレポリマーやオリゴマーと多価アルコ
ール化合物の配合割合は、解離イソシアネート基（ＮＧ
Ｏ）と多価アルコール化合物の水酸基（ＯＨ）の比（Ｎ
ＧＯｌｏＨ）が１．０〜１．２当撒の範囲であることが
望ましい。この比が１．０当撒未満又は１．２当量を超
えると所定の特性が得られず好ましくない。この反応系
を促進させる触媒としては、一般的にジアルキルチンジ
ラウレート等が使用される。
［００１０１本発明に使用される（Ｃ）撥水剤としては
、例えばフルオロカーボン系、シリコーン系等があり具
体的には、ＫＴＬ４５０，６１０，５００Ｆ、ＫＴ４０
０（喜多村社製、商品名）、ＴＳＬ８２４１，８１８５
（東芝シリコーン社製、商品名）等が挙げられ、これら
は単独又は２種以上混合して使用することができる。
［００１１１本発明に使用される（Ｄ）絶縁性粉末とし
ては、カーボンランダム、炭化はう素、窒化アルミニウ
ム、窒化チタン等の非酸化物のセラミック粉末、ベリリ
ウム、マグネシウム、アルミニウム、チタン、シリコン
等の酸化物粉末等が挙げられ、これらは単独又は２種以
上混合し使用することができる。これらの絶縁性粉末は
、アリカリ金属イオン、ハロゲンイオン等の不純物イオ
ンを含まないことが望ましい。またいずれも平均粒径旬
μｍ以下であることが好ましい。平均粒径が１０ａｍを
超えると、組成物の性状がペースト状にならず塗布性能
が低下し好ましくない。絶縁性粉末と樹脂成分［（Ａ）
＋ （Ｂ） ＋ （Ｃ） ］との配合割合は、重量比で
４０／６０〜９０／１０であることが望ましい。絶縁性
粉末が４０重量部未満では満足な絶縁性が得られず、ま
た９０重量部を超えると作業性や密着性が低下し好まし
くない。
［００１２１本発明の絶縁性ペーストは粘度調整のため
必要に応じて有機溶剤を使用することもできる。その溶
剤類としては、ジオキサン、ヘキサン、酢酸セロソルブ
、エチルセロソルブ、ブチルセロソルブ、ブチルセロソ
ルブアセテート、ブチルカルピトールアセテート、イソ
ホロン等が挙げられる。
［００１３］絶縁性ペーストの製造方法は、常法に従い
各原料成分を十分混合した後、さらに三本ロールによる
混練処理をし、その後、減圧脱泡して製造することがで
きる。こうして製造した絶縁性ペーストはシリンジに充
填され、デイスペンサーを用いてリードフレーム上に吐
出し半導体チップを接合した後、ワイヤポンデイジグを
行い、樹脂封止して樹脂封止型の半導体装置の製造等に
使用される。
［００１４］[Means for Solving the Problems] As a result of extensive research in an attempt to achieve the above object, the present inventors have found a semiconductor chip that has excellent moisture resistance, hydrolysis resistance, adhesiveness, and does not generate voids. The present invention was completed based on the discovery that a highly reliable insulating paste can be obtained in response to increased size and high insulation properties. [0006] That is, the present invention provides (A) a urethane polymer or a urethane oligomer (B
) A polyhydric alcohol compound, (C) a water repellent, and (D) an insulating powder as essential components. [0007] The present invention will be described in detail below. [00081 As the urethane polymer or urethane oligomer (A) used in the present invention, all prepolymers and oligomers that form urethane can be used, but blocked isocyanates in which terminal active isocyanate groups are blocked with active hydrogen compounds Prepolymers are preferably used. A typical example is one in which polyester or polybutadiene having a terminally active isocyanate is blocked with a blocking agent such as acetoacetate oxime or phenol. Specific examples include Desmodule AP Stable (manufactured by Bayer, trade name), Kneelock Q-9062 (
(manufactured by Idemitsu Petrochemical Co., Ltd., trade name), etc., and these can be used alone or in combination of two or more kinds. These blocked urethane polymers or oligomers are stable at room temperature, but have the property of dissociating isocyanate groups when heated to 120° C. or higher. [0009] The polyhydric alcohol compound (B) used in the present invention includes those having a long chain alkyl group in consideration of flexibility and softness, and polyester-based, polybutadiene-based, and silicone-based polyhydric alcohols. used. Specific examples include R-45HT (manufactured by Idemitsu Petrochemical Co., Ltd., trade name), polyethylene glycol and polypropylene glycol manufactured by Sanyo Chemical Co., Ltd., alcohol-modified silicone BY series manufactured by Toray Silicone Co., Ltd., etc.
These may be used alone or in combination of two or more. The hydroxyl groups of these polyhydric alcohols react with the isocyanate groups dissociated from the urethane polymer or oligomer described above. The blending ratio of urethane prepolymer or oligomer and polyhydric alcohol compound is based on dissociated isocyanate groups (NG
O) and the hydroxyl group (OH) of the polyhydric alcohol compound (N
GOloH) is preferably in the range of 1.0 to 1.2. If this ratio is less than 1.0 equivalents or more than 1.2 equivalents, predetermined characteristics cannot be obtained, which is not preferable. As a catalyst for promoting this reaction system, dialkyltin dilaurate or the like is generally used. [00101 The water repellent (C) used in the present invention includes, for example, fluorocarbon type, silicone type, etc. Specifically, KTL450, 610, 500F, KT40
0 (manufactured by Kitamura Co., Ltd., product name), TSL8241, 8185
(manufactured by Toshiba Silicone Co., Ltd., trade name), and these can be used alone or in a mixture of two or more. [00111 The insulating powder (D) used in the present invention includes non-oxide ceramic powder such as carbon random, boron carbide, aluminum nitride, titanium nitride, beryllium, magnesium, aluminum, titanium, silicon, etc. Examples include oxide powder, and these can be used alone or in a mixture of two or more. These insulating powders desirably do not contain impurity ions such as alkali metal ions and halogen ions. Further, it is preferable that the average particle size of each of the particles is less than or equal to 1 μm. If the average particle size exceeds 10 am, the composition will not become pasty and the coating performance will deteriorate, which is not preferable. Insulating powder and resin component [(A)
+ (B) + (C)] is desirably in a weight ratio of 40/60 to 90/10. If the insulating powder is less than 40 parts by weight, satisfactory insulation properties cannot be obtained, and if it exceeds 90 parts by weight, workability and adhesion will deteriorate, which is not preferable. [00121 In the insulating paste of the present invention, an organic solvent may be used as necessary to adjust the viscosity. Examples of the solvent include dioxane, hexane, cellosolve acetate, ethyl cellosolve, butyl cellosolve, butyl cellosolve acetate, butyl carpitol acetate, isophorone, and the like. [0013] The insulating paste can be manufactured by thoroughly mixing each raw material component according to a conventional method, then kneading the mixture using three rolls, and then defoaming under reduced pressure. The insulating paste produced in this way is filled into a syringe and discharged onto a lead frame using a dispenser to bond the semiconductor chip, followed by wire bonding and resin sealing to form a resin-sealed semiconductor device. Used for manufacturing, etc. [0014]
【作用】本発明の絶縁性ペーストは、ウレタンポリマー
またはオリゴマー、多価アルコール化合物、撥水剤、お
よび絶縁性粉末を用いることによって、耐湿性、耐加水
分解性、接着性が向上してボイドの発生や断線不良がな
く、かつ半導体素子のワイヤボンディングにおける２８
０℃という苛酷な加熱条件を適用しても接着強度の劣化
がなくまたチップの反りを少なくさせることができた。
［００１５］[Function] By using a urethane polymer or oligomer, a polyhydric alcohol compound, a water repellent, and an insulating powder, the insulating paste of the present invention improves moisture resistance, hydrolysis resistance, and adhesiveness, and eliminates voids. 28 in wire bonding of semiconductor devices without occurrence or disconnection defects.
Even when severe heating conditions of 0° C. were applied, there was no deterioration in adhesive strength, and chip warpage could be reduced. [0015]
【実施例】次に本発明を実施例によって具体的に説明す
るが、本発明はこれらの実施例によって限定されるもの
ではない。実施例１〜３表１に示した各成分を三本ロー
ルで３回混練して絶縁性ペーストを製造した。比較例市
販のエポキシ樹脂ベースの溶剤型絶縁性ペーストを入手
した。
［００１６］実施例１〜３および比較例の絶縁性ペース
トを用いて、半導体チップとリードフレームとを接着硬
化して半導体装置を製造した。これらについて接着強度
、加水分解性、浸水後の絶縁特性、チップの反りの試験
を行ったのでその結果を表２に示した。いずれも本発明
が優れており、本発明の顕著な効果が認められた。
［００１７］接着強度は、２００μｍ厚のリードフレー
ム（銅系）上に４ Ｘ １２ｍｍのシリコンチップをそ
れぞれの接着条件で接着し、３５０℃の温度でプッシュ
プルゲージを用いて測定した。加水分解性は、半導体チ
ップ接着条件で硬化させた後、１００メツシユに粉砕し
て、１８０℃で２時間、加熱抽出を行ってクロルイオン
の量をイオンクロマトグラフィーで測定した。浸水後の
絶縁特性は、ＪＩＳ−Ｃ２１０３により測定した。チッ
プの反りは、硬化後のチップ表面を表面粗さ計で測定し
、チップ中央部と端部との距離で示した。
［００１８］[Examples] Next, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples. Examples 1 to 3 Each component shown in Table 1 was kneaded three times using a triple roll to produce an insulating paste. Comparative Example A commercially available epoxy resin-based solvent-based insulating paste was obtained. [0016] Using the insulating pastes of Examples 1 to 3 and Comparative Example, a semiconductor chip and a lead frame were bonded and cured to manufacture a semiconductor device. These were tested for adhesive strength, hydrolyzability, insulation properties after immersion in water, and chip warpage, and the results are shown in Table 2. The present invention was superior in all cases, and the remarkable effects of the present invention were recognized. [0017] Adhesion strength was measured by adhering a 4 x 12 mm silicon chip onto a 200 μm thick lead frame (copper-based) under each bonding condition and using a push-pull gauge at a temperature of 350°C. Hydrolyzability was determined by curing under semiconductor chip adhesion conditions, pulverizing into 100 meshes, performing heating extraction at 180° C. for 2 hours, and measuring the amount of chlorine ions by ion chromatography. The insulation properties after immersion in water were measured according to JIS-C2103. The chip warpage was measured by measuring the chip surface after curing with a surface roughness meter, and was expressed as the distance between the chip center and the edge. [0018]
【表１】
＊１ ；出光石油化学社製、ポリブタジェン系フェノー
ルブロックイソシアネートプレポリマーの５０％ブチル
カルピトール溶液
＊２：出光石油化学社製、末端水酸基化合物＊３：喜多
村社製
＊４ ：東芝シリコーン社製。
［００１９］[Table 1] *1; 50% butyl carpitol solution of polybutadiene-based phenol block isocyanate prepolymer manufactured by Idemitsu Petrochemical Co., Ltd. *2: Manufactured by Idemitsu Petrochemical Co., Ltd., terminal hydroxyl group compound *3: Manufactured by Kitamura Co., Ltd. *4: Toshiba Silicone Made by company. [0019]
【表２】 （単位）
＊ ：Ｊ ｌ５−Ｃ２１０３により測定。
［００２０１
【発明の効果］以上の説明および表２の結果から明らか
なように、本発明の絶縁性ペーストは、耐湿性、耐加水
分解性、接着性に優れ、ボイドの発生や反りが少なく、
半導体チップの大型化と高絶縁性に対応した信頼性の高
い電子機器を製造することができる。[Table 2] (Unit) *: Measured according to J15-C2103. [00201] [Effects of the Invention] As is clear from the above explanation and the results in Table 2, the insulating paste of the present invention has excellent moisture resistance, hydrolysis resistance, and adhesiveness, and has little void generation and warping.
It is possible to manufacture highly reliable electronic devices that are compatible with larger semiconductor chips and higher insulation properties.
Claims (1)
オリゴマー、 （Ｂ）多価アルコール化合物、 （Ｃ）撥水剤及び （Ｄ）絶縁性粉末 を必須成分とすることを特徴とする絶縁性ペースト。1. An insulating paste comprising (A) a urethane polymer or urethane oligomer, (B) a polyhydric alcohol compound, (C) a water repellent, and (D) an insulating powder as essential components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40462390A JPH04209689A (en) | 1990-12-04 | 1990-12-04 | Insulating paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40462390A JPH04209689A (en) | 1990-12-04 | 1990-12-04 | Insulating paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04209689A true JPH04209689A (en) | 1992-07-31 |
Family
ID=18514286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40462390A Pending JPH04209689A (en) | 1990-12-04 | 1990-12-04 | Insulating paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04209689A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7842178B2 (en) | 2005-04-18 | 2010-11-30 | University Of Iowa Research Foundation | Magnet incorporated electrically conductive electrodes |
-
1990
- 1990-12-04 JP JP40462390A patent/JPH04209689A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7842178B2 (en) | 2005-04-18 | 2010-11-30 | University Of Iowa Research Foundation | Magnet incorporated electrically conductive electrodes |
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