JPH02262346A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02262346A JPH02262346A JP1084599A JP8459989A JPH02262346A JP H02262346 A JPH02262346 A JP H02262346A JP 1084599 A JP1084599 A JP 1084599A JP 8459989 A JP8459989 A JP 8459989A JP H02262346 A JPH02262346 A JP H02262346A
- Authority
- JP
- Japan
- Prior art keywords
- pts
- resin composition
- chip
- urethane prepolymer
- benzophenone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000011342 resin composition Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 12
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical group C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 14
- 239000005062 Polybutadiene Substances 0.000 abstract description 4
- 230000007062 hydrolysis Effects 0.000 abstract description 4
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229920002857 polybutadiene Polymers 0.000 abstract description 4
- 239000012948 isocyanate Substances 0.000 abstract description 3
- 150000002513 isocyanates Chemical class 0.000 abstract description 3
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 abstract description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 abstract description 2
- 235000014676 Phragmites communis Nutrition 0.000 abstract 2
- 239000012965 benzophenone Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- AYOHIQLKSOJJQH-UHFFFAOYSA-N dibutyltin Chemical compound CCCC[Sn]CCCC AYOHIQLKSOJJQH-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- -1 halogen ions Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- AODKDNSWTJMJLU-UHFFFAOYSA-N 3-hydroxyiminobutanoic acid Chemical compound ON=C(C)CC(O)=O AODKDNSWTJMJLU-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000007718 adhesive strength test Methods 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、特定のウレタン樹脂組成物を用いて、半導体
チップをリードフレームに接着固定した半導体装置に関
し、耐湿性、耐加水分解性、接着性に優れるとともに半
導体チップの反りが少ないもので、特に大型チップの接
着に好適である。Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention relates to a semiconductor device in which a semiconductor chip is adhesively fixed to a lead frame using a specific urethane resin composition. It has excellent hydrolyzability and adhesive properties, and causes less warpage of semiconductor chips, and is particularly suitable for bonding large chips.
（従来の技術）
半導体装置の製造において、金属薄板（リードフレーム
）上の所定部分にＩＣ，ＬＳＩ等の半導体チップを接続
する工程は、半導体素子の長期信頼性に影響を与える重
要な工程の１つである。(Prior Art) In the manufacture of semiconductor devices, the process of connecting semiconductor chips such as ICs and LSIs to predetermined portions on a thin metal plate (lead frame) is one of the important processes that affects the long-term reliability of semiconductor devices. It is one.
従来からこの接続方法として半導体チップのシリコン面
をリードフレーム上の金メツキ面に加圧圧着するという
Ａｕ −３ｉ共晶法が主流であった。Conventionally, the mainstream connection method has been the Au-3i eutectic method, in which the silicon surface of the semiconductor chip is pressure-bonded to the gold-plated surface of the lead frame.
近年、貴金属、特に金の高騰を契機として、樹脂封止型
半導体装置では、Ａｕ−３ｉ共晶法から、半田を使用す
る方法、接着剤を使用する方法等に急速に移行しつつあ
る。 しかし、半田を使用する方法は、一部実用化され
ているが半田や半田ボールが飛散して電極等に付着し、
腐食断線の原因となることが指摘されている。 一方、
接着剤を使用する方法では、通常、シリカ粉末等を配合
したエポキシ樹脂が用いられ、約１０年前から一部実用
化されてきたが、信頼性面でＡｕ−３ｉ共晶法に比較し
て満足すべきものが得られなかった。In recent years, with the rise in the price of precious metals, especially gold, resin-sealed semiconductor devices are rapidly shifting from the Au-3i eutectic method to methods using solder, adhesives, and the like. However, although some methods using solder have been put into practical use, the solder and solder balls may scatter and adhere to the electrodes, etc.
It has been pointed out that this can cause corrosion and disconnection. on the other hand,
In the method using adhesive, epoxy resin mixed with silica powder etc. is usually used, and it has been partially put into practical use for about 10 years, but it is not as reliable as the Au-3i eutectic method. I couldn't get anything that I was satisfied with.
（発明が解決しようとする課題）
接着剤を使用する場合は、半田法に比べて耐熱性に優れ
る等の長所を有しているが、その反面、使用される樹脂
や硬化剤が半導体素子の接着用として作られたものでな
いため、ボイドの発生や、耐湿性、耐加水分解性に劣り
、アルミニウム電極の腐食を促進し、断線不良の原因と
なることが多く、素子の信頼性はＡ１１−ｓｒ共晶法に
比較して劣っていた。 また、最近、ＩＣ／ＬＳＩやＬ
ＥＤ等の半導体チップの大型化に伴い、接着力の低下や
チ、ツブクラックが発生し、問題となっていた。(Problem to be solved by the invention) When using an adhesive, it has advantages such as superior heat resistance compared to the soldering method, but on the other hand, the resin and curing agent used are Since it is not made for adhesive use, it tends to generate voids, has poor moisture resistance and hydrolysis resistance, accelerates corrosion of the aluminum electrode, and often causes disconnection, and the reliability of the element is A11- It was inferior to the sr eutectic method. Also, recently, IC/LSI and L
As semiconductor chips such as EDs have become larger, problems have arisen in which adhesive strength has decreased and chips and cracks have occurred.
本発明は、上記の事情・欠点に鑑みてなされたもので、
半導体チップの大型化に対応して耐湿性、耐加水分解性
、接着性に優れるとともに半導体チップの反りが少ない
、信頼性の高い半導体装置を提供しようとするものであ
る。The present invention was made in view of the above circumstances and drawbacks, and
The present invention aims to provide a highly reliable semiconductor device that has excellent moisture resistance, hydrolysis resistance, and adhesiveness in response to the increasing size of semiconductor chips, and has less warpage of semiconductor chips.
［発明の構成］
（課題を解決するための手段）
本発明者らは、上記の目的を達成するために鋭意研究を
重ねた結果、特定の樹脂組成物を用いることによって、
目的が達成されることを見いだし、本発明を完成したも
のである。[Structure of the Invention] (Means for Solving the Problems) As a result of intensive research to achieve the above object, the present inventors have found that by using a specific resin composition,
The inventors have found that the object has been achieved and have completed the present invention.
すなわち、本発明は、
（Ａ）分子内にベンゾフェノン基を有するウレタンプレ
ポリマー
（Ｂ）多価アルコール化合物及び
（Ｃ）絶縁性粉末
を必須成分とする樹脂組成物を用いて、半導体チップと
リードフレームとを接着固定してなることを特徴とする
半導体装置である。That is, the present invention provides a semiconductor chip and a lead frame using a resin composition whose essential components are (A) a urethane prepolymer having benzophenone groups in the molecule, (B) a polyhydric alcohol compound, and (C) an insulating powder. This is a semiconductor device characterized by being formed by bonding and fixing.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に用いる（Ａ）分子内にベンゾフェノン基を有す
るウレタンプレポリマーとしては、分子内にベンゾフェ
ノン基を有しウレタンを形成するプレポリマーおよびオ
リゴマーのすべてのものが使用できる。 これらの中で
も末端活性イソシアネート基を活性水素化合物でブロッ
ク化したブロックイソシアネートプレポリマーが望まし
い。As the urethane prepolymer (A) having a benzophenone group in the molecule used in the present invention, all prepolymers and oligomers having a benzophenone group in the molecule to form urethane can be used. Among these, block isocyanate prepolymers in which terminal active isocyanate groups are blocked with active hydrogen compounds are desirable.
ベンゾフェノン基を導入することについては、末端活性
イソシアネートを有するポリエステル又はポリブタジェ
ンを、アセト酢酸エステルオキシム、フェノール等のブ
ロッキング剤でブロック化したものに、ベンゾフェノン
テトラカルボン酸二無水物などを加熱反応させることが
挙げられ、これらは単独又は２種以上混合して使用する
ことができる。 これらのブロック化されたベンゾフェ
ノン基を含むウレタンプレポリマーおよびオリゴマーは
室温で安定であるが、１２０℃以上に加熱するとブロッ
ク化がはずれる性質をもっているものである。To introduce a benzophenone group, it is possible to heat-react benzophenone tetracarboxylic dianhydride or the like to a polyester or polybutadiene having a terminal active isocyanate that has been blocked with a blocking agent such as acetoacetate oxime or phenol. These can be used alone or in a mixture of two or more. These urethane prepolymers and oligomers containing blocked benzophenone groups are stable at room temperature, but have the property of becoming unblocked when heated to 120° C. or higher.
本発明に用いる（Ｂ）多価アルコール化合物としては、
可視性、柔軟性を考慮して長鎖のアルキル基を有するも
のや、ポリエステル系、ポリブタジェン系およびシリコ
ーン系の多価アルコール類が使用できる。 具体的な化
合物としては、ポリエチレングリコール、ポリプロピレ
ングリコール（三洋化成社製）、Ｒ−４５ＨＴ（出光石
油化学社製、商品名）、アルコール変性シリコーンＢＹ
シリーズ（トーレ・シリコーン社製、商品名）等が挙げ
られ、これらは単独又は２種以上混合して使用される。As the polyhydric alcohol compound (B) used in the present invention,
In consideration of visibility and flexibility, those having long-chain alkyl groups, polyester-based, polybutadiene-based, and silicone-based polyhydric alcohols can be used. Specific compounds include polyethylene glycol, polypropylene glycol (manufactured by Sanyo Chemical Co., Ltd.), R-45HT (manufactured by Idemitsu Petrochemical Co., Ltd., trade name), alcohol-modified silicone BY
series (manufactured by Toray Silicone Co., Ltd., trade name), and these may be used alone or in combination of two or more.
これらの多価アルコール化合物の水酸基は、前述したウ
レタンプレポリマーから解離したインシアネート基と反
応する。 ウレタンプレポリマーと多価アルコールの配
合割合は、解離インシアネート基（ＮＧＯ）と多価アル
コール化合物の水酸基（ＯＨ）の比（ＮＣＯｌｏＨ）が
１．０〜１．２当量の範囲内であることが望ましい、
この配合割合が１．０当量未満、または１．２当量を超
えると所定の特性が得られない、 このインシアネート
基と水酸基との反応系を促進する触媒として、一般的に
ジアルキルチンジラウレート等が使用される。The hydroxyl groups of these polyhydric alcohol compounds react with the incyanate groups dissociated from the urethane prepolymer described above. The blending ratio of the urethane prepolymer and the polyhydric alcohol is such that the ratio of the dissociated incyanate group (NGO) to the hydroxyl group (OH) of the polyhydric alcohol compound (NCOloH) is within the range of 1.0 to 1.2 equivalents. desirable,
If the blending ratio is less than 1.0 equivalent or more than 1.2 equivalent, the desired properties cannot be obtained. Dialkyltin dilaurate is generally used as a catalyst to promote the reaction system between incyanate groups and hydroxyl groups. used.
本発明に用いる（Ｃ）絶縁性粉末としては、アルカリ金
属イオン、ハロゲンイオン等の不純物イオンを含まない
ことが望ましい、 このなめ必要であればイオン交換水
あるいはイオン交換樹脂等で洗浄して不純物を取り除く
、 このようなものとしてはカーボランダム、炭化はう
素、窒化はう素、窒化アルミニウム、窒化チタンなどの
非酸化物のセラミック粉末、ベリラム、マグネシウム、
アルミニウム、チタン、シリコンなどの酸化物粉末等が
挙げられ、これらは単独又は２種以上混合して使用する
ことができる。 これらの絶縁性粉末は、いずれも平均
粒径で１０μｍ以下であることが好ましい、 平均粒径
が１０μｍを超えると、樹脂組成物の性状がペースト状
にならず塗布性能が低下して好ましくない、 （Ｃ）
絶縁性粉末と、（Ａ＞ウレタンプレポリマーおよび＜８
）多価アルコール化合物の樹脂成分との配合割合［Ｃ／
（Ａ＋Ｂ）］は、重合比で６０／ ４０〜９０／１０で
あることが望ましい、 絶縁性粉末が６０重量部未溝で
あると満足なペースト性状が得られず、また９０重量部
を超えると作業性や密着性が低下し好ましくないからで
ある。It is desirable that the insulating powder (C) used in the present invention does not contain impurity ions such as alkali metal ions and halogen ions.If necessary, this powder may be washed with ion-exchanged water or ion-exchange resin to remove impurities. These include carborundum, non-oxide ceramic powders such as boron carbide, boron nitride, aluminum nitride, titanium nitride, berylum, magnesium,
Examples include oxide powders of aluminum, titanium, silicon, etc., and these can be used alone or in a mixture of two or more. It is preferable that the average particle size of each of these insulating powders is 10 μm or less. If the average particle size exceeds 10 μm, the properties of the resin composition will not become paste-like and the coating performance will deteriorate, which is undesirable. (C)
Insulating powder, (A>urethane prepolymer and <8
) Blending ratio of polyhydric alcohol compound with resin component [C/
(A+B)] is preferably in a polymerization ratio of 60/40 to 90/10.If the insulating powder is ungrooved at 60 parts by weight, satisfactory paste properties cannot be obtained, and if it exceeds 90 parts by weight, This is because workability and adhesion deteriorate, which is undesirable.
本発明に係る樹脂組成物は、その粘度調整のため、必要
に応じて有機溶剤を使用することができる。 その有機
溶剤としては、ジオキサン、ヘキサン、酢酸セロソルブ
、エチルセロソルブ、ブチルセロソルブ、ブチルセロソ
ルブアセテート、ブチルカルピトールアセテート、イソ
ホロン等が挙げられ、これらは単独又は２種以上混合し
て使用することができる。 また必要に応じて消泡剤や
カップリング剤その他の添加剤を加えることができる。In order to adjust the viscosity of the resin composition according to the present invention, an organic solvent can be used as necessary. Examples of the organic solvent include dioxane, hexane, cellosolve acetate, ethyl cellosolve, butyl cellosolve, butyl cellosolve acetate, butyl carpitol acetate, isophorone, etc., and these can be used alone or in a mixture of two or more. Further, an antifoaming agent, a coupling agent, and other additives can be added as necessary.
本発明にかかる樹脂組成物の製造方法は、常法に従い各
原料成分を十分混合した後、さらに例えば三本ロールに
よる混練処理をし、その後、減圧成泡して製造すること
ができる。 こうして製造した樹脂組成物は、シリンジ
に充填し、デイスペンサーを用いてリードフレーム上に
吐出し、リードフレームと半導体チップを加熱して接着
固定する。 次いでワイヤボンディングを行い、その後
樹脂で封止して樹脂封止型半導体装置を製造する。The resin composition according to the present invention can be produced by sufficiently mixing each raw material component according to a conventional method, and then further kneading the mixture using, for example, three rolls, followed by foaming under reduced pressure. The resin composition thus produced is filled into a syringe and discharged onto the lead frame using a dispenser, and the lead frame and the semiconductor chip are heated and bonded and fixed. Next, wire bonding is performed, and the semiconductor device is then sealed with resin to manufacture a resin-sealed semiconductor device.
この半導体装置を２８０℃で加熱しても、大型チップの
反り変形が極めて少なく、優れた接着力を有するもので
ある。Even when this semiconductor device is heated at 280° C., the large chip exhibits very little warpage and has excellent adhesive strength.
（実施例）
次に本発明を実施例によって説明するが、本発明はこれ
らの実施例によって限定されるものではない、 実施例
及び比較例において「部」とは特に説明のない限り「重
量部」を意味する。(Example) Next, the present invention will be explained by examples, but the present invention is not limited by these examples. In the examples and comparative examples, "parts" means "parts by weight" unless otherwise specified. ” means.
合成例Ｘ〜Ｚ
第１表に示した各成分を加熱反応させて、分子内にベン
ゾフェノン基を有するウレタンプレポリマーＸ、Ｙ、Ｚ
を合成しな。Synthesis Examples
Don't synthesize.
第１表
単位：重量部
実施例 １〜３
第２表に示した各樹脂組成分を三本ロールにより３回混
練して、−液性の樹脂組成物をそれぞれ製造した。Table 1 Unit: parts by weight Examples 1 to 3 Each resin composition shown in Table 2 was kneaded three times using three rolls to produce a -liquid resin composition.
比較例
市販のエポキシ樹脂ベースの溶剤型半導体用接着剤を入
手して比較例とした。Comparative Example A commercially available epoxy resin-based solvent-type adhesive for semiconductors was obtained and used as a comparative example.
実施例１〜３の樹脂組成物および比較例の接着剤を用い
て、半導体チップとリードフレームとを第２表の半導体
チップ接着条件で固定して半導体装置を製造した。 こ
れらの半導体装置について接着強度、半導体チップの反
り、加水分解イオン、耐湿性、絶縁抵抗の試験を行った
。 その結果を第２表に示したがいずれも本発明の顕著
な効果が認められた。Using the resin compositions of Examples 1 to 3 and the adhesive of Comparative Example, a semiconductor chip and a lead frame were fixed under the semiconductor chip adhesion conditions shown in Table 2 to manufacture a semiconductor device. These semiconductor devices were tested for adhesive strength, semiconductor chip warpage, hydrolyzed ions, moisture resistance, and insulation resistance. The results are shown in Table 2, and in all cases the remarkable effects of the present invention were recognized.
なお、接着強度の試験は、２００μｌ厚のリードフレー
ム上に４ｘ１２■のシリコンチップを接着し、３５０℃
における接着強度を１ツシユプルゲージを用いて測定し
た。 反り試験は、硬化後のチップ表面を表面粗さ計で
測定し、チップ中央部と端部との距離の差で示しな、
加水分解性イオンの試験は、半導体チップ接着条件で硬
化させた後、１００メツシユに粉砕して、１８０℃で２
時間加熱抽出を行い、抽出されたＣＩイオンの量をイオ
ンクロマトグラフィーで測定した。 耐湿性試験は、温
度１２１℃、気圧２気圧の水蒸気中における耐湿試験（
ＰＣＴ）と、温度１２０℃、圧力２気圧の水蒸気中で印
加電圧直流１５■を通電する耐湿試験（バイアス−ＰＣ
Ｔ）とを行って評価した。 耐湿性試験に供した半導体
装置試料は各々６０個で、時間の経過に伴う不良発生数
を第２表に示した。In addition, the adhesive strength test was performed by gluing a 4 x 12 inch silicon chip onto a 200 μl thick lead frame and heating it at 350°C.
The adhesive strength was measured using a one-piece pull gauge. In the warpage test, the surface of the chip after curing is measured using a surface roughness meter, and the difference in distance between the center and edge of the chip is measured.
In the hydrolyzable ion test, after curing under semiconductor chip bonding conditions, it was crushed into 100 meshes and heated at 180°C for 2 hours.
Time heating extraction was performed, and the amount of extracted CI ions was measured by ion chromatography. The moisture resistance test is a moisture resistance test (
PCT) and a humidity test (bias-PC
T) was performed and evaluated. Sixty semiconductor device samples were each subjected to the moisture resistance test, and Table 2 shows the number of defects that occurred over time.
なお、不良発生数は、半導体装置を構成するアルミニウ
ム電極の腐食によるオーブン又はリーク電流が許容値の
５００％以上への上昇をもって判定しな、 絶縁抵抗試
験は、ＪＩＳ−Ｃ−２１０３により測定した。The number of defects is determined by the rise in oven or leakage current to 500% or more of the allowable value due to corrosion of the aluminum electrodes constituting the semiconductor device. The insulation resistance test was measured according to JIS-C-2103.
［発明の効果〕
以上の説明および第２表から明らかなように、本発明の
半導体装置は、半導体チップとリードフレームとの接着
に特定の樹脂組成物を用いたことによって、優れた耐湿
性、耐加水分解性を示し、その結果アルミニウム電極の
腐食による断線不良等が起らず、ボイドの発生もなく、
半導体チップの反りが少なく、また接着性、特に熱時の
接着性に優れたもので、信頼性の高い製品を得ることが
できる。[Effects of the Invention] As is clear from the above description and Table 2, the semiconductor device of the present invention has excellent moisture resistance, by using a specific resin composition for adhesion between the semiconductor chip and the lead frame. It exhibits hydrolysis resistance, and as a result, there is no disconnection due to corrosion of the aluminum electrode, and no voids are generated.
The semiconductor chip has less warpage and has excellent adhesive properties, especially adhesive properties when heated, making it possible to obtain highly reliable products.
特許出願人 東芝ケミカル株式会社Patent applicant: Toshiba Chemical Corporation
Claims (1)
レポリマー、 （Ｂ）多価アルコール化合物及び （Ｃ）絶縁性粉末 を必須成分とする樹脂組成物を用いて、半導体チップと
リードフレームとを接着固定してなることを特徴とする
半導体装置。[Claims] 1. Using a resin composition containing (A) a urethane prepolymer having a benzophenone group in the molecule, (B) a polyhydric alcohol compound, and (C) an insulating powder as essential components, a semiconductor chip and A semiconductor device characterized by being formed by adhesively fixing a lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1084599A JPH02262346A (en) | 1989-04-03 | 1989-04-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1084599A JPH02262346A (en) | 1989-04-03 | 1989-04-03 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02262346A true JPH02262346A (en) | 1990-10-25 |
Family
ID=13835150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1084599A Pending JPH02262346A (en) | 1989-04-03 | 1989-04-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02262346A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278609A (en) * | 1989-04-20 | 1990-11-14 | Toshiba Chem Corp | Insulating paste |
| FR2684105A1 (en) * | 1991-11-21 | 1993-05-28 | Neyrpic | WEAR RESISTANT COMPOSITE MATERIALS AND PROCESS FOR THEIR MANUFACTURE. |
| CN107698730A (en) * | 2017-10-23 | 2018-02-16 | 安徽屹翔滤材有限公司 | A kind of preparation method of polyurethane sieve plate |
-
1989
- 1989-04-03 JP JP1084599A patent/JPH02262346A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278609A (en) * | 1989-04-20 | 1990-11-14 | Toshiba Chem Corp | Insulating paste |
| FR2684105A1 (en) * | 1991-11-21 | 1993-05-28 | Neyrpic | WEAR RESISTANT COMPOSITE MATERIALS AND PROCESS FOR THEIR MANUFACTURE. |
| CN107698730A (en) * | 2017-10-23 | 2018-02-16 | 安徽屹翔滤材有限公司 | A kind of preparation method of polyurethane sieve plate |
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