JPH04206429A - Ion radiation processing device - Google Patents
Ion radiation processing deviceInfo
- Publication number
- JPH04206429A JPH04206429A JP33797990A JP33797990A JPH04206429A JP H04206429 A JPH04206429 A JP H04206429A JP 33797990 A JP33797990 A JP 33797990A JP 33797990 A JP33797990 A JP 33797990A JP H04206429 A JPH04206429 A JP H04206429A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- power source
- container
- pair
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000012212 insulator Substances 0.000 claims description 12
- 238000011282 treatment Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 241000252233 Cyprinus carpio Species 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明（よ 半導体工業における半導体素子製造や表面
処理等に用いる装置に関するものであり、特に大面積の
半導体素子や半導体薄膜等への不純物注入及び表面処理
を短時間で一様に行うイオン照射処理装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an apparatus used for semiconductor element manufacturing and surface treatment in the semiconductor industry, particularly for impurity implantation and surface treatment into large-area semiconductor elements, semiconductor thin films, etc. The present invention relates to an ion irradiation processing apparatus that uniformly performs processing in a short period of time.
従来の技術
大面積の半導体素子や半導体薄膜等への不純物注入や表
面処理を行う技術として（よ １）イオン源で発生した
イオンをビーム状に絞り、 このイオンビームを加速し
質量分離及びビームの電気的な走査を行って、機械的
に走査されている大面積の基板に対してイオンビームを
照射する技麻２）フィラメントから発生した熱電子と多
極磁界によって大口径のイオンビームを発生させるパケ
ット型イオン源を用いる技術や、 ３）真空槽内に高周
波電極を設け、−力の高周波電極上に大面積の試料を置
き、高周波電極間で生じたプラズマ中のイオンを照射す
る技術等があっ７′ミ
発明が解決しようとする課題
大面積の半導体素子や半導体薄膜等への不純物注入や表
面処理を行う従来の技術のうぢ １）の絞ったイオンビ
ームを電気的に走査し さらに機械的に走査した大面積
の試料に対してイオンビームを照射注入する技術（瓜
装置構成か複雑であり、かつ処理時間が長いという課題
かあっｆ、：Ｏまた２）のバケット型イオン源（よ フ
ィラメントから発生する不純物による汚染が起こるとい
う課題や、フィラメントか活性なガスのプラズマに曝さ
れるたム イオン源の寿命が短いという課題があったさ
らに３）東 高周波放電により発生するプラズマ中に試
料を置き、プラズマ中のイオンを照射する技術は 装置
構成が簡易でありしかも大面積の試料に対して容易にイ
オンを照射することができる低 照射するイオンのエネ
ルギー及び量が正確に制御できず不揃いであること ま
たイオンのエネルギーか数十エレクトロンホルト程度で
あることカ牧 照射・注入するイオンの量および深す
を制御した処理が出来ないという課題があっｆ’−。Conventional technology A technique for implanting impurities and surface treatment into large-area semiconductor elements and semiconductor thin films, etc. (1) The ions generated in the ion source are focused into a beam shape, this ion beam is accelerated, and the mass separation and beam 2) Generate a large diameter ion beam using thermionic electrons generated from the filament and a multipolar magnetic field. There are technologies that use a packet-type ion source, and 3) a technology that places a high-frequency electrode in a vacuum chamber, places a large-area sample on the high-frequency electrode, and irradiates it with ions in the plasma generated between the high-frequency electrodes. Problems to be solved by the invention The conventional technology for implanting impurities and surface treatment into large-area semiconductor devices and semiconductor thin films, etc. 1) Electrically scanning a narrowed ion beam Technology for irradiating and implanting ion beams onto a large-area sample that has been scanned
Problems include the complicated equipment configuration and long processing time; problems such as contamination caused by impurities generated from the filament; 3) Higashi: The technique of placing a sample in plasma generated by high-frequency discharge and irradiating it with ions in the plasma has a simple device configuration and is very large. The energy and amount of the ions to be irradiated cannot be precisely controlled and are uneven, and the energy of the ions must be on the order of several tens of electron holts. There is a problem in that it is not possible to control the amount and depth of implanted ions.
課題を解決するための手段
直流電源と接続された一対の電極に開口部を設け、高周
波電源と接続された導体容器を、絶縁体を介してこれら
２つの電極との間に絶縁体を介して設け、前記一対の電
極の開口部のそれぞれに真空槽を接続し これらの真空
槽内に試料台を設ける。Means for Solving the Problem An opening is provided in a pair of electrodes connected to a DC power source, and a conductive container connected to a high frequency power source is placed between these two electrodes via an insulator. A vacuum chamber is connected to each of the openings of the pair of electrodes, and a sample stage is provided within these vacuum chambers.
作用
本発明（よ 導体容器と導体容器を挟む電極との間に高
周波電界を印加することにより、大口径の容器内に均一
なプラズマを発生することが可能となる。放電のための
フィラメントか不要であるたム 装置の寿命か長く、か
つ汚染が発生しない。Effects of the present invention By applying a high-frequency electric field between a conductive container and the electrodes that sandwich the conductive container, it is possible to generate uniform plasma in a large-diameter container. A filament for discharge is not required. The life of the equipment is long and no pollution occurs.
また導体容器を２枚の絶縁体及び開口部を有する２枚の
電極で挟私 さらにこの２枚の電極に直流電界を印加し
ていることから、同時に２つの方向にエネルギーを制御
した大口径のイオンビームを生成することが可能となる
。In addition, since the conductor container is sandwiched between two insulators and two electrodes with openings, and a DC electric field is applied to these two electrodes, a large-diameter device that controls energy in two directions at the same time can be used. It becomes possible to generate an ion beam.
実施例
以下図面に基ついて本発明をさらに詳しく説明すも
第１図は本発明に係るイオン照射処理装置の第１実施例
の概略構成図を示したものである。Ａ Ｉ。EXAMPLE The present invention will be described in more detail with reference to the drawings below. FIG. 1 shows a schematic configuration diagram of a first example of an ion irradiation processing apparatus according to the present invention. AI.
ＳＵＳ等で作られた導体容器ｌ（よ 周波数１３゜５６
ＭＨｚの高周波電源２にマツチングボックス３を介して
接続されている。この導体容器１の断面形状は円形・楕
円形成は矩形の何れでもよい。Conductor container made of SUS etc. (frequency 13°56
It is connected to a MHz high frequency power source 2 via a matching box 3. The cross-sectional shape of the conductor container 1 may be either circular or elliptical or rectangular.
導体容器１に対して、石英・セラミックス・ガラス等の
絶縁体４及び絶縁体５を挟んで設けられた電極６及び７
（よ Ａｌ、 ＳＵＳ、Ｍｏ、Ｔａ等で作られている
。これらの電極６及び７はコイル８を介して直流電源９
と接続されている。コイル８は高周波信号か直流電源９
に流入することを防ぎミ安定した直流電圧を供給するた
めに設けていもイオン源−・の原料ガスの導入（主 電
極６及び電極７の開口部にそれぞれ設けｆ＝ Ａｌ、
ＳＵＳ。Electrodes 6 and 7 are provided on the conductor container 1 with an insulator 4 such as quartz, ceramics, glass, etc. and an insulator 5 interposed therebetween.
(It is made of Al, SUS, Mo, Ta, etc.) These electrodes 6 and 7 are connected to a DC power source 9 via a coil 8.
is connected to. Coil 8 is a high frequency signal or DC power supply 9
In order to supply a stable DC voltage, the source gas of the ion source is introduced (f = Al,
SUS.
Ｍｏ、Ｔａ等からなる多孔板１０及び多孔板１１と接続
してい黴 真空槽１２及び真空槽１３から行なう。なお
真空槽１２．１３と電極６，７とを電気的に絶縁するた
敦 絶縁体１４、１５を設けていも 真空槽１２及び真
空槽１３へのガスの導入はガス導入管１６及び１７によ
って行なう。またイオン源の内部が１０−２〜１０−’
Ｐａの圧力となるようｉミ ガス排出管１８及び〕９
により真空排気を行なう。The molding is carried out from a vacuum chamber 12 and a vacuum chamber 13 connected to a perforated plate 10 and a perforated plate 11 made of Mo, Ta, etc. Note that even if insulators 14 and 15 are provided to electrically insulate the vacuum chambers 12 and 13 from the electrodes 6 and 7, gas is introduced into the vacuum chambers 12 and 13 through gas introduction pipes 16 and 17. . Also, the inside of the ion source is 10-2 to 10-'
Gas exhaust pipe 18 and ]9 so that the pressure is Pa.
Perform vacuum evacuation.
］Ｏ−２〜１０−’Ｐａの圧力のもとて、導体容器１と
電極６及び電極７の間に印加される高周波電力により、
導体容器ｌ内に均一なプラズマ２０か生成される。生成
されたプラズマ２０中のイオン２１及び２２（戴 多孔
板１０及び多孔板１１か社真空槽１２及び真空槽１３に
押し出される。多孔板１０及び１１から呂たイオン２１
．２２ｉよ 接地電位の多孔電極２３．２４との間でそ
れぞれ加速される。そしてイオン２１．２２＋１ 多
孔電極２３．２４を通過した後、慣性で試料台２５，２
６上の試料２７．２８に照射レトービング等の処理を行
う。] Under a pressure of O-2 to 10-'Pa, high-frequency power is applied between the conductor container 1 and the electrodes 6 and 7,
A uniform plasma 20 is generated within the conductor container l. The ions 21 and 22 in the generated plasma 20 are pushed out from the porous plates 10 and 11 to the vacuum chambers 12 and 13.
．． 22i and porous electrodes 23 and 24 at ground potential, respectively. After passing through the porous electrode 23.24, the ions 21.22+1 and 21.22+1 pass through the sample stages 25 and 2 due to inertia.
Samples 27 and 28 above 6 are subjected to treatments such as irradiation retorting.
なお導体容器１のプラズマに曝される側に（よ石英・セ
ラミックス・ガラス等からなる絶縁体２９が設けられて
いる。高周波電源の接地側の電位を接地電位にすると、
マツチングボックス３内のＬＣ回跣 特にバリコンと、
絶縁体２９とを合成した耐圧のた敢 すなわち接地電位
に対して印加できる電圧の上限のた嵌 １０数ｋＶ程度
までの加速電圧を印加することができる。Note that an insulator 29 made of quartz, ceramics, glass, etc. is provided on the side of the conductor container 1 exposed to plasma.If the potential on the ground side of the high frequency power source is set to the ground potential,
The LC circuit in the matching box 3, especially the variable capacitor,
Due to the combined breakdown voltage with the insulator 29, that is, the upper limit of the voltage that can be applied with respect to the ground potential, it is possible to apply an accelerating voltage of up to about 10-odd kV.
この方法に対し さらに高周波電源４の接地側を電極６
と直流的に接続して、高周波電源４の接地側の電位を直
流電源７の高圧側の電位と等しくさせる。すなわちマツ
チングボックス３及び高周波電源４の電位を、全て接地
電位に対して高電位とすることにより、マツチングボッ
クス３中のバリコンの耐圧に関係なく、 １００ｋＶ程
度まで加速電圧を印加することができる。この場合 マ
ツチングボックス３及び高周波電源４の電位（訳 全て
接地電位に対して高圧になっているたム 高圧容器内に
隔離するとともに 制御は光ファイバー等を用いて行（
＼ 高周波電源４への電源電力の供給は絶縁トランスを
介しで行う等の高電圧対策を付加する。In addition to this method, the ground side of the high frequency power source 4 is connected to the electrode 6.
is connected in a DC manner to make the potential on the ground side of the high frequency power source 4 equal to the potential on the high voltage side of the DC power source 7. That is, by setting the potentials of the matching box 3 and the high-frequency power source 4 to be higher than the ground potential, it is possible to apply an accelerating voltage of up to about 100 kV regardless of the withstand voltage of the variable capacitor in the matching box 3. . In this case, the potentials of the matching box 3 and the high-frequency power source 4 (all of which are at high voltage relative to the ground potential) are isolated in a high-pressure container, and control is performed using optical fibers, etc.
＼ Add measures against high voltage, such as supplying power to the high frequency power supply 4 via an isolation transformer.
さらに高周波電力の供給部と直流電源の出力部とを、
コイル３０で接続する。このコイル３０により、直流的
に電極１と電極６を短絡して、イオン源内の直流的な電
位分布のバランスをとっている。な耘 ガス導入管１６
．１７への原料カスの供給（唄 ガスボンベ３１．３２
から流量制御装置３３．３４を通じて行なう。Furthermore, a high frequency power supply section and a DC power supply output section,
Connect with coil 30. This coil 30 short-circuits the electrodes 1 and 6 in a direct current manner, thereby balancing the direct current potential distribution within the ion source. Nagata gas introduction pipe 16
．． Supply of raw material waste to 17 (song gas cylinder 31.32
through flow control devices 33 and 34.
以上のように本発明（よ 導体容器と導体容器を挟む電
極との間に高周波電界を印加することにより、大口径の
容器内に均一なプラズマを発生することが可能となも
すなわち放電のためのフィラメントが不要であるた嵌
装置の寿命が長く、か゛つ汚染が発生しなし−
また導体容器を開口部を有する２枚の電極で挟ム 直流
電界を印加していることか収 同時に２つの方向にエネ
ルギーを制御した大口径のイオンビームを生成すること
か可能となる。すなわち簡素な装置構成で、大面積の試
料に対して−様なイオン照舷 及びそれによる処理を同
時に２つのロットに対して行うことか可能となる。As described above, the present invention makes it possible to generate uniform plasma in a large-diameter container by applying a high-frequency electric field between a conductive container and the electrodes that sandwich the conductive container.
In other words, there is no need for a filament for discharge.
The device has a long lifespan and does not cause any contamination. Also, the conductor container is sandwiched between two electrodes with an opening, and the DC electric field is applied. It becomes possible to generate an ion beam of That is, with a simple device configuration, it is possible to simultaneously perform similar ion illumination and processing on two lots of large-area samples.
また 高周波電源の接地側の電位を直流高圧電源で与え
られる電位にすることにより、加速電圧を百ｋＶ程度ま
で印加することか可能となる。Furthermore, by setting the potential on the ground side of the high frequency power supply to the potential given by the DC high voltage power supply, it becomes possible to apply an accelerating voltage of up to about 100 kV.
実施例から明らかなように本発明は装置構成が簡易であ
り、しかも複数の大面積の試料に対して短時間で注入処
理することが可能となる。As is clear from the examples, the present invention has a simple device configuration, and moreover, it is possible to perform injection processing on a plurality of large-area samples in a short time.
以上のように本発明（よ イメージスキャナーや、アク
ティブマトリックス方式の液晶デイスプレィパネルにお
ける薄膜トランジスターアレイ等へ大面積半導体素子製
造における高純度の不純物ドーピング或は表面処理を、
複数の試料に対して高精度かつ−様に短時間に行うこと
が可能となるという点て、極めて有用性の高いものであ
も発明の効果
本発明によれば 導体容器と導体容器を挟む電極との間
に高周波電界を印加することにより、大口径の容器内に
均一なプラズマを発生することが可能となる。すなわち
放電のためのフィラメントが不要であるた嵌 装置の寿
命か長く、かつ汚染が発生しない。As described above, the present invention (including high-purity impurity doping or surface treatment in the production of large area semiconductor devices such as image scanners and thin film transistor arrays in active matrix liquid crystal display panels)
Effects of the Invention According to the present invention, it is extremely useful in that it can be performed on multiple samples with high precision and in a short time. By applying a high frequency electric field between the two, it becomes possible to generate uniform plasma within a large diameter container. In other words, since a filament for discharge is not required, the life of the fitting device is longer and no contamination occurs.
また導体容器を開口部を有する２枚の電極て挟へ 直流
電界を印加していることか仮 同時に２つの方向にエネ
ルギーを制御した大口径のイオンビームを生成すること
か可能となる。すなわち簡素な装置構成で、大面積の試
料に対して−様なイオン照射、及びそれによる処理を同
時に２つのロットに対して行うことか可能となる。In addition, by applying a DC electric field to the conductor container between two electrodes with openings, it is possible to simultaneously generate a large-diameter ion beam with energy controlled in two directions. That is, with a simple device configuration, it is possible to perform ion irradiation of a large area on a sample, and to simultaneously perform ion irradiation and processing thereof on two lots at the same time.
図は本発明の一実施例におけるイオン照射処理装置の概
略構成を示す断面図である。
１・・・導体容器 ２・・・高周波型＃ ３・・・マツ
チングポック人 ４，５・・・絶縁体 ６，７・・電板
８・・・コイ）’ｖ、 ９・・・直流型＋７１’、
１０．ＩＩ・・・多孔板、１２．１３・・・真空掻 １
４，１５・・・絶縁体 ２゜・・・ブラズス ２１．２
２・・・イオン、 ２３．２４・・多孔電極 ２５．２
６・・・試料台、 ２９・・絶縁体３０・・・コイ瓜The figure is a sectional view showing a schematic configuration of an ion irradiation processing apparatus in an embodiment of the present invention. 1...Conductor container 2...High frequency type #3...Matching pock person 4,5...Insulator 6,7...Electric plate 8...Carp)'v, 9...DC Type +71',
10. II...Perforated plate, 12.13...Vacuum scraping 1
4,15...Insulator 2゜...Brazus 21.2
2...Ion, 23.24...Porous electrode 25.2
6... Sample stand, 29... Insulator 30... Carp melon
Claims (5)
、高周波電源と接続された導体容器を、前記一対の電極
との間に絶縁体を介して設け、前記一対の電極の開口部
とそれぞれ接続された２つの真空槽に試料台を備えたこ
とを特徴とするイオン照射処理装置。(1) An opening is provided in a pair of electrodes connected to a DC power source, a conductor container connected to a high frequency power source is provided with an insulator interposed between the pair of electrodes, and an opening in the pair of electrodes is provided. An ion irradiation processing apparatus characterized in that two vacuum chambers each connected to a sample stage are provided with a sample stage.
開口部を有する複数の電極を設けたことを特徴とする請
求項１に記載のイオン照射処理装置(2) The ion irradiation treatment apparatus according to claim 1, characterized in that a plurality of electrodes having openings are provided between a pair of electrodes connected to a DC power source and a vacuum chamber.
縁体を設けたことを特徴とする請求項１に記載のイオン
照射処理装置。(3) The ion irradiation treatment apparatus according to claim 1, wherein an insulator is provided on the side of the conductor container or the electrode that is exposed to plasma.
れる電位にしたことを特徴とする請求項１に記載のイオ
ン照射処理装置。(4) The ion irradiation processing apparatus according to claim 1, wherein the potential on the ground side of the high-frequency power source is set to a potential given by a DC power source.
イルを入れたことを特徴とする請求項４に記載のイオン
照射処理装置。(5) The ion irradiation processing apparatus according to claim 4, characterized in that a coil is inserted between the output part of the high frequency power supply and the output part of the DC power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33797990A JPH04206429A (en) | 1990-11-30 | 1990-11-30 | Ion radiation processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33797990A JPH04206429A (en) | 1990-11-30 | 1990-11-30 | Ion radiation processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04206429A true JPH04206429A (en) | 1992-07-28 |
Family
ID=18313803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33797990A Pending JPH04206429A (en) | 1990-11-30 | 1990-11-30 | Ion radiation processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04206429A (en) |
-
1990
- 1990-11-30 JP JP33797990A patent/JPH04206429A/en active Pending
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