JPH07123121B2 - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH07123121B2 JPH07123121B2 JP61225266A JP22526686A JPH07123121B2 JP H07123121 B2 JPH07123121 B2 JP H07123121B2 JP 61225266 A JP61225266 A JP 61225266A JP 22526686 A JP22526686 A JP 22526686A JP H07123121 B2 JPH07123121 B2 JP H07123121B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- discharge
- substrate
- power source
- discharge chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、半導体工業における半導体素子製造等に用い
るプラズマ処理装置に関するものであり、特に半導体素
子や半導体薄膜等への不純物注入に用いるイオンドープ
装置や、半導体薄膜等のエッチングに用いるプラズマ処
理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used for manufacturing semiconductor elements in the semiconductor industry, and particularly to an ion doping apparatus used for implanting impurities into semiconductor elements and semiconductor thin films. , A plasma processing apparatus used for etching semiconductor thin films and the like.
従来の技術 半導体薄膜等に不純物をイオンの形で所望の量及び深さ
に注入する方法としては、（１）現在市販されている様
な、イオン源・イオン加速部・質量分離部・基板室等を
有するイオン注入装置を用いる方法、（２）イオン源と
して直流グロー放電を用い、質量分離部を有さずイオン
加速部を経てイオンを注入する簡易型イオン注入装置
〔第４図J.C.Muller,et.al:（Proc.European Photovolt
aic Solar Energy Conf.）（プロミーデング ヨーロピ
アン フォトボルテック ソーラー エネージイ コン
フェレンス）（Luxemburg）Sept.1977,P897−909〕を用
いる方法、基板室内に容量結合型高周波電極を設け、高
周波グロー放電による化学的気相反応を起こすプラズマ
CVD装置の高周波電極に直流電圧を印加させる方法（第
５図）などがある。2. Description of the Related Art As a method for implanting impurities into a semiconductor thin film or the like in the form of ions to a desired amount and depth, (1) ion sources, ion accelerators, mass separators, substrate chambers currently available on the market (2) A simple ion implanter which uses a direct current glow discharge as an ion source and implants ions through an ion accelerating part without a mass separation part [Fig. 4 JC Muller, et. .al: (Proc.European Photovolt
aic Solar Energy Conf.) (Luxemburg Sept. 1977, P897-909), a chemical vapor phase by high frequency glow discharge. Plasma that causes a reaction
There is a method of applying a DC voltage to the high frequency electrode of the CVD device (Fig. 5).
第４図，第５図において、１は放電室、２は直流グロー
放電用アノード電極、３は放電用直流電源、４は加速用
電極、５は加速用直流電源、６はガス導入管、７は絶縁
体、８はガス排出管、９は基板台、11は真空空器、12は
基板台、13は高周波電極、14,15は絶縁体、16はマッチ
ングボックス、17は高周波発振器、18は直流電源、19は
ガス導入管、20はガス排出管である。また、エッチング
に於いては、前記プラズマCVD装置にCF4等の反応性気体
を導入してエッチングを行う方法などがあった。In FIGS. 4 and 5, 1 is a discharge chamber, 2 is a DC glow discharge anode electrode, 3 is a discharge DC power supply, 4 is an acceleration electrode, 5 is an acceleration DC power supply, 6 is a gas introduction pipe, 7 Is an insulator, 8 is a gas discharge pipe, 9 is a substrate stand, 11 is a vacuum chamber, 12 is a substrate stand, 13 is a high-frequency electrode, 14 and 15 are insulators, 16 is a matching box, 17 is a high-frequency oscillator, and 18 is A DC power source, 19 is a gas introduction pipe, and 20 is a gas discharge pipe. Further, in the etching, there has been a method in which a reactive gas such as CF 4 is introduced into the plasma CVD apparatus to perform the etching.
発明が解決しようとする問題点 イオンの形で不純物を半導体素子等に注入を行う従来の
技術において、（１）の市販されている様なイオン注入
装置を用いる方法は、質量分離部を有するなど装置構成
が複雑でメインテナンスや改造が行いにくく、さらに大
面積の試料への不純物の注入の為に、イオンビームを電
気的に走査したり試料を機械的に走査するなどの機構を
付加しなければならず、装置全体としての構成も複雑で
あり、メインテナンスや改造が困難であった。（２）の
直流グロー放電を用いた簡易型イオン注入装置に於いて
は、直流グロー放電が起こりイオン源としては機能する
圧力（１〜10-2Torr）に放電室の圧力を保つため、差動
排気等を用いねればならず、また大面積の試料への不純
物の注入の為に放電電極を大きくすると電極の沿面放電
等による放電の不均一性や不安定性、さらに放電電極が
イオン源の内部にあるため、イオンシースにより加速さ
れたイオンによって電極のスパッタリングされて発生す
る不純物汚染等の問題がある。（３）の容量結合型高周
波グロー放電を用いたプラズマCVD装置の高周波電極に
直流電圧を印加する方法は、簡素な方法で大面積の試料
への不純物注入に利用できるが、使用する圧力が高周波
グロー放電の起こる１〜10-3Torrの領域の圧力であるこ
とから、高周波電極間で異常な放電が起こらない100〜1
KVと（１）及び（２）の方法と較べてイオン加速の電圧
が小さい為、不純物が極表面層に高濃度で注入されるこ
とによる半導体材料の極表面層の欠陥や損傷の集中や
（２）と同様に高周波放電電極が基板室内にあるため、
イオンシースにより加速されたイオンが高周波電極をス
パッタリングすることで発生する不純物汚染などの問題
があった。Problems to be Solved by the Invention In the conventional technique of implanting impurities into a semiconductor element or the like in the form of ions, the method (1) using a commercially available ion implanter has a mass separation unit, etc. The system configuration is complicated and maintenance and modification are difficult to perform, and in order to inject impurities into a large area sample, a mechanism such as electrically scanning the ion beam or mechanically scanning the sample must be added. In addition, the configuration of the entire device is complicated, and maintenance and modification are difficult. In the simple ion implanter using the DC glow discharge of (2), since the DC glow discharge occurs and the pressure of the discharge chamber is maintained at the pressure (1-10 -2 Torr) that functions as an ion source, Dynamic discharge must be used, and if the discharge electrode is made large to inject impurities into a large-area sample, the discharge electrode becomes uneven and unstable due to creeping discharge of the electrode. Since it is inside, there is a problem such as impurity contamination generated by sputtering of the electrode by the ions accelerated by the ion sheath. The method of applying a DC voltage to the high frequency electrode of the plasma CVD apparatus using the capacitively coupled high frequency glow discharge of (3) can be used for implanting impurities into a large area sample by a simple method, but the pressure used is high frequency. Since the pressure is in the range of 1 to 10 -3 Torr where glow discharge occurs, abnormal discharge does not occur between high frequency electrodes 100 to 1
Since the ion acceleration voltage is smaller than KV and the methods of (1) and (2), the concentration of defects and damage in the pole surface layer of the semiconductor material due to the high concentration of impurities injected into the pole surface layer ( Since the high-frequency discharge electrode is inside the substrate chamber as in 2),
There is a problem such as contamination of impurities generated when the ions accelerated by the ion sheath sputter the high frequency electrode.
また、エッチングに於いて、容量結合型高周波グロー放
電を用いたプラズマCVD装置に反応性気体を導入してエ
ッチングを行う方法も、高周波電極のスパッタリング等
によって発生する不純物汚染などの問題があった。Further, in etching, a method of introducing a reactive gas into a plasma CVD apparatus using a capacitively coupled high frequency glow discharge to perform etching also has a problem such as impurity contamination generated by sputtering of a high frequency electrode.
問題点を解決するための手段 以上の問題点を解決するために、本発明のプラズマ処理
装置は、ガス導入管に接続された絶縁性筒状管と、前記
絶縁性筒状管の外部に設けられた高周波電極及び磁場発
生源から構成される放電室、ガス排出管と接続された接
地電位の高真空室とその内部に設けられた接地電位の基
板台から構成される基板室、前記基板室及び前記放電室
と絶縁を保ち前記基板台と前記放電室の間に第１の直流
電源と接続された第１の導電性バイアス部、及び前記放
電室内に於いて前記第１の導電性バイアス部と対向する
位置に第１の直流電源又は第２の直流電源と接続して設
けた第２の導電性バイアス部を備えてなるものである。Means for Solving the Problems In order to solve the above problems, the plasma processing apparatus of the present invention is provided with an insulating cylindrical tube connected to a gas introduction tube, and provided outside the insulating cylindrical tube. Discharge chamber composed of a high-frequency electrode and a magnetic field generation source, a substrate chamber composed of a high-vacuum chamber of a ground potential connected to the gas discharge tube and a substrate table of a ground potential provided therein, and the substrate chamber. And a first conductive bias portion which is insulated from the discharge chamber and is connected to a first DC power source between the substrate table and the discharge chamber, and the first conductive bias portion in the discharge chamber. And a second conductive bias portion provided so as to be connected to the first DC power source or the second DC power source at a position opposed to.
すなわち、本発明は、イオン源として絶縁性筒状管の外
部に高周波電極及び磁場発生部を配したものを用い、絶
縁性筒状管の内部に荷電粒子を引き出し所望のエネルギ
ーに加速する第１の導電性バイアス部及び荷電粒子を第
１のバイアス部側に押し出す第２の導電性バイアス部を
前記第１の導電性バイアス部と対向する位置に設けると
いうものである。That is, according to the present invention, a high-frequency electrode and a magnetic field generator are arranged outside an insulating cylindrical tube as an ion source, and charged particles are drawn into the insulating cylindrical tube to accelerate to a desired energy. The second conductive bias portion for pushing out the conductive bias portion and the charged particles to the first bias portion side is provided at a position facing the first conductive bias portion.
作用 絶縁性筒状管の外部に高周波電極を設けることで、絶縁
性筒状管内に高周波放電により生成されるイオンが、イ
オンシースにより加速されて前記高周波電極をスパッタ
リングして発生させる不純物を無くし、さらに前記高周
波電極の外側に磁場発生部を配することで、発生する磁
場による電子の旋回運動（サイクロトロン運動：室温と
同程度の熱運動の平均運動エネルギーをもつ電子が13.5
6MHzの高周波と同じ周期で旋回運動する場合の旋回半径
は約0.14cm）を励起し、高周波によって供給されるエネ
ルギーを有効に用いてたとえば10-3〜10-4Torrの気体圧
力でも安定かつ一様に放電させることが可能となる。こ
の10-3〜10-4Torrの圧力下でのイオンの平均自由行程
は、イオン種によって異なるが、放電室から基板台まで
の距離と同程度（数10cm）或いはそれ以上となるため差
動排気等を用いずに放電室に配した第１及び第２の導電
性バイアス部という簡素な構造で荷電粒子の押し出し及
び加速を行い、基板台上の半導体基板等の試料まで荷電
粒子を輸送し、前記試料に照射することが可能となる。
さらに、装置内の真空度が10-3〜10-4Torrであること及
び放電用の高周波電極と加速用の導電性バイアス部を分
離していることから、真空度が低いことや電圧が高いこ
とによる沿面放電やなだれ放電等の異常な放電を起こす
ことなく、かつ放電電極と加速電極の一致による放電の
不安定さがなく、1kev以上に荷電粒子を加速することが
可能となる。また、放電の形式から、放電室として口径
の大きな絶縁性筒状管を用いることで、容易に基板台上
に設けられた大面積の試料に対して一様に不純物の注入
を行うことが可能となる。By providing a high-frequency electrode outside the insulating tubular tube, the ions generated by the high-frequency discharge in the insulating tubular tube, the impurities generated by accelerating by the ion sheath and sputtering the high-frequency electrode, are eliminated, Further, by disposing a magnetic field generator outside the high-frequency electrode, the electron's swirling motion due to the generated magnetic field (cyclotron motion: 13.5 electrons with an average kinetic energy of thermal motion similar to room temperature are generated).
The orbital radius is about 0.14 cm when the orbital motion is performed in the same cycle as the high frequency of 6 MHz, and the energy supplied by the high frequency is used effectively to stabilize the gas pressure at, for example, 10 -3 to 10 -4 Torr. Can be discharged. The mean free path of ions under the pressure of 10 -3 to 10 -4 Torr differs depending on the ion species, but it is the same as the distance from the discharge chamber to the substrate table (several tens of cm) or more, so the differential The charged particles are pushed out and accelerated by a simple structure of the first and second conductive bias parts arranged in the discharge chamber without using exhaust gas, etc., and the charged particles are transported to a sample such as a semiconductor substrate on a substrate table. It becomes possible to irradiate the sample.
Furthermore, since the degree of vacuum inside the device is 10 -3 to 10 -4 Torr and the high frequency electrode for discharge and the conductive bias portion for acceleration are separated, the degree of vacuum is low and the voltage is high. It is possible to accelerate charged particles to 1 kev or more without causing abnormal discharge such as creeping discharge or avalanche discharge, and without instability of discharge due to coincidence between the discharge electrode and the accelerating electrode. Also, due to the type of discharge, by using an insulating cylindrical tube with a large diameter as the discharge chamber, it is possible to easily and uniformly inject impurities into a large-area sample mounted on the substrate table. Becomes
実 施 例 以下、図面に基づいて本発明についてさらに詳しく説明
する。Example Hereinafter, the present invention will be described in more detail with reference to the drawings.
第１図は本発明に係るプラズマ処理装置の第１実施例の
概略構成図を示したものである。放電室Ａの絶縁性筒状
管21はセラミックスや石英ガラス等を用い、容量結合型
高周波グロー放電を前記絶縁性筒状管21内に発生させる
高周波電極22には導電性の良い銅・ニッケル等の金属を
用い、絶縁性筒状管21の外部に設ける。高周波電極22の
一方はマッチングボックス23を介して高周波発振器24と
接続し、他方を接地して絶縁性筒状管21内に高周波電力
の供給を行う。さらに、高周波電極22の外部に配した電
磁石25により発生する磁場によって電子の旋回運動（サ
イクロトロン運動）を励起し、高周波電力を有効に用い
ることで、比較的高い真空度（10-3〜10-4Torr）で絶縁
性筒状管１内部にプラズマを安定に発生させる。放電室
Ａへの材料ガスの供給は、ガスボンベ26からバルブ27・
流量制装置28及び石英ガラス・セラミックス・テフロン
等で作られた絶縁管31を経て絶縁性筒状管21内部の第２
の導電性バイアス部電極29−ａの透孔30より行う。本実
施例では第２の導電性バイアス部29−ａがガス導入部を
兼ねているが、基板室Ｂにガス導入管を接続し、基板室
Ｂから放電室Ａの絶縁性筒状管21内にガスを導入しても
よい。この場合、高電位のプラズマ或いは導電性バイア
ス部とガス導入部が直接接しないため、絶縁管を用いる
ことなく安全にガスを導入することができる。さらに第
２の導電性バイアス部と対向した位置で第１のバイアス
部電極29−ｂを、セラミックス・石英ガラス・塩化ビニ
ル・アクリル等で作られた絶縁フランジ32を介して放電
室Ａと基板室Ｂの間に設ける。前記バイアス部電極29−
ａ及び29−ｂは直流高圧電源32−ａ及び32−ｂに各々接
続され、所望の電圧を印加することにより、放電室Ａ内
の荷電粒子を基板室Ｂへ押し出し、加速を行う。基板室
Ｂを構成する高真空室63は、真空排気系34に通じるガス
排気管35に接続され、10-3〜10-6Torrの圧力に保たれ
る。高真空室63はステンレス・アルミ等の金属で構成さ
れた真空槽であり、接地電位のアース線に接続するこ
と、或いは接地電位の真空排気装置34と金属製ガス排出
管35により接続することにより接地電位に保たれる。基
板支持棒36及び石英・セラミックス・アクリル・塩化ビ
ニル等で作られた絶縁フランジ37により基板室Ｂ内部に
固定された基板台38は、ステンレス・銅・アルミなどの
金属で作られ、この基板台38上に試料が置かれる。基板
台18は直流電源39に接続することにより、第１のバイア
ス部29−ｂの透孔を通って加速された荷電粒子を照射す
ることを行う。本実施例において印加する直流電圧を接
地電位にしてもよく、さらに直流電源を接続せず、接地
電位のアース線に基板台38を直接接続してもよい。第１
のバイアス部電極29−ｂと基板台38との電位差に応じた
運動エネルギーを得た荷電粒子ビームは基板台38上の半
導体基板等の試料40に照射し、所望の量の不純物注入或
いはエッチングを試料に対して行う。FIG. 1 shows a schematic configuration diagram of a first embodiment of a plasma processing apparatus according to the present invention. The insulating tubular tube 21 of the discharge chamber A is made of ceramics or quartz glass, and the high frequency electrode 22 for generating capacitively coupled high frequency glow discharge in the insulating tubular tube 21 is made of highly conductive copper, nickel or the like. The metal is used and is provided outside the insulating tubular tube 21. One of the high-frequency electrodes 22 is connected to the high-frequency oscillator 24 via the matching box 23, and the other is grounded to supply high-frequency power into the insulating tubular tube 21. Further, the magnetic field generated by the electromagnet 25 arranged outside the high-frequency electrode 22 excites the electron's swirling motion (cyclotron motion) and effectively uses the high-frequency power, so that a relatively high degree of vacuum (10 −3 -10 −10 − 4 Torr) to stably generate plasma inside the insulating tubular tube 1. The material gas is supplied to the discharge chamber A from the gas cylinder 26 to the valve 27.
The second inside the insulating tubular tube 21 through the flow control device 28 and the insulating tube 31 made of quartz glass, ceramics, Teflon, etc.
Through the through hole 30 of the conductive bias portion electrode 29-a. In the present embodiment, the second conductive bias portion 29-a also serves as the gas introducing portion, but a gas introducing pipe is connected to the substrate chamber B, and the insulating cylindrical tube 21 from the substrate chamber B to the discharge chamber A is connected. You may introduce gas into. In this case, since the high potential plasma or the conductive bias portion and the gas introduction portion do not come into direct contact with each other, the gas can be introduced safely without using an insulating tube. Further, at a position facing the second conductive bias portion, the first bias portion electrode 29-b is connected to the discharge chamber A and the substrate chamber through an insulating flange 32 made of ceramics, quartz glass, vinyl chloride, acrylic or the like. It is provided between B. Bias part electrode 29-
a and 29-b are respectively connected to the DC high voltage power supplies 32-a and 32-b, and by applying a desired voltage, the charged particles in the discharge chamber A are pushed out to the substrate chamber B and accelerated. The high vacuum chamber 63 that constitutes the substrate chamber B is connected to the gas exhaust pipe 35 that communicates with the vacuum exhaust system 34, and is maintained at a pressure of 10 −3 to 10 −6 Torr. The high vacuum chamber 63 is a vacuum chamber made of metal such as stainless steel or aluminum, and is connected to a ground potential ground wire, or is connected to a ground potential vacuum exhaust device 34 and a metal gas discharge pipe 35. It is kept at ground potential. The substrate base 38 fixed inside the substrate chamber B by the substrate support rod 36 and the insulating flange 37 made of quartz, ceramics, acrylic, vinyl chloride, etc. is made of metal such as stainless steel, copper, aluminum, etc. The sample is placed on 38. By connecting the substrate table 18 to the DC power source 39, the accelerated charged particles are irradiated through the through holes of the first bias unit 29-b. In this embodiment, the DC voltage applied may be the ground potential, or the substrate base 38 may be directly connected to the ground potential ground wire without connecting the DC power supply. First
The charged particle beam, which has obtained the kinetic energy corresponding to the potential difference between the bias part electrode 29-b and the substrate table 38, is irradiated to the sample 40 such as the semiconductor substrate on the substrate table 38, and a desired amount of impurity implantation or etching is performed. Perform on the sample.
第２図は、本発明に係るプラズマ処理装置の第１の実施
例を於いて、電磁石25に流す電流（放電室Ａ内の磁場の
強さ）を変化させた時の基板台38に流れる電流（基板台
に照射するイオンの電気量よりやや大きい）を示したも
のである。この場合の絶縁性筒状管の内径は130mm,基板
台の直径は100mm,基板台と第１の導電性バイアス部との
距離150mm,気体は窒素ガス，供給する高周波の周波数は
13.56MHz・電力は50W,第１の導電性バイアス部29−ｂに
対する基板台38の電位差は−4.5KV,放電の無い時に電磁
石25を流れる電流が1Aである場合の絶縁性筒状管21の中
心軸上の磁束密度は約55Gである。本実施例に於いて基
板室内の圧力が3.0×10-4Torr以下では電磁石に電流を
流さない場合、放電室Ｂ内の放電は起こらず、磁場によ
る放電励起の効果が高いことが確かめられた。FIG. 2 shows the current flowing through the substrate table 38 when the current flowing through the electromagnet 25 (the strength of the magnetic field in the discharge chamber A) is changed in the first embodiment of the plasma processing apparatus according to the present invention. (It is slightly larger than the amount of electricity of the ions irradiated on the substrate table). In this case, the inner diameter of the insulating tubular tube is 130 mm, the diameter of the substrate table is 100 mm, the distance between the substrate table and the first conductive bias part is 150 mm, the gas is nitrogen gas, and the frequency of the supplied high frequency is
13.56MHz · Power is 50W, the potential difference of the substrate table 38 with respect to the first conductive bias portion 29-b is −4.5KV, and the insulating tubular tube 21 in the case where the current flowing through the electromagnet 25 is 1A when there is no discharge. The magnetic flux density on the central axis is about 55G. In this example, it was confirmed that when the pressure in the substrate chamber was 3.0 × 10 −4 Torr or less, no discharge was generated in the discharge chamber B when no current was applied to the electromagnet, and the effect of discharge excitation by the magnetic field was high. .
第３図は、本発明に係るプラズマ処理装置の第２実施例
の概略構成図を示したものである。放電室Ｃの絶縁性筒
状管41はセラミックスや石英ガラス等を用い、誘電結合
型高周波グロー放電用の高周波電極42には導電性の良い
銅・ニッケル等の金属を用い、絶縁性筒状管41の外部に
設ける。この高周波電極42をマッチングボックス43を介
して高周波発振器44と接続して絶縁性筒状管41内に高周
波電力の供給を行い、さらに高周波電極42の外側に配し
た電磁石45−a,45−ｂが発生する磁場によって電子の旋
回運動（サイクロトロン運動）を励起し、さらに放電に
より生じたプラズマを閉じ込め、高周波電力を有効に放
電に用いることで、比較的高い真空度（10-3〜10-4Tor
r）で絶縁性筒状管41内部にプラズマを安定して発生さ
せる。絶縁性筒状管41への材料ガスの供給は、ガスボン
ベ46からバルブ47・流量制御装置48、石英・セラミック
ス・テフロン等で作られた絶縁管49を経て絶縁性筒状管
41上部のステンレス等で作られた導電性フランジ50−ａ
の透孔51から行われる。伝導性フランジ50−ａの放電プ
ラズマにさらされる側に石英・セラミックス等を用いた
隔壁52を設け、透孔51を通った材料ガスは、隔壁52の透
孔53により放電室Ｃの高周波電極42の間に導入される。
さらに、第２の導電性フランジ50−ａと対向する位置に
設けられた第１の導電性フランジ50−ｂを、セラミック
ス・石英・塩化ビニル・アクリル等を用いた絶縁フラン
ジ54を介して基板室Ｄ上に設け、導電性フランジ50−ｂ
の放電により生じる荷電粒子にさらされる表面に、石英
・セラミックス等を用いた保護の被覆55を設ける。この
導電性フランジ50−ａ及び50−ｂを直流高圧源56−ａ及
び56−ｂに各々接続し、所望の電位を印加することによ
り、放電室Ｃ内の荷電粒子を基板室Ｄへ押し出し、加速
を行う。基板室Ｄを構成する高真空室64は、真空排気系
57に通ずるガス排気管58に接続され、10-3〜10-6Torrの
圧力に保たれる。高真空室64はステンレス・アルミ等の
金属で構成された真空槽であり、接地電位のアース線に
接続すること、或いは接地電位の真空排気装置57と金属
製ガス排出管58により接続することにより接地電位に保
たれる。また、石英・セラミックス及び・アクリル・塩
化ビニル等で作られた絶縁フランジ59及び基板支持率60
により基板室Ｄ内部に固定された基板台61はステンレス
・銅・アルミなどの金属で作られ、この基板台61上に試
料62が置かれる。さらに基板台61を直流電源63に接続し
電位を印加することにより、導電性フランジ50−ｂを通
り加速された荷電粒子を追加速或いは減速することを行
う。導電性フランジ50−ｂと基板台61との電位差に応じ
た運動エネルギーを得た荷電粒子は基板台61上の試料62
に照射し、所望の量の不純物注入或いはエッチングを行
う。FIG. 3 shows a schematic configuration diagram of a second embodiment of the plasma processing apparatus according to the present invention. The insulating tubular tube 41 of the discharge chamber C is made of ceramics, quartz glass, or the like, and the high-frequency electrode 42 for inductively coupled high-frequency glow discharge is made of a metal having good conductivity such as copper or nickel. Provided outside 41. This high-frequency electrode 42 is connected to a high-frequency oscillator 44 through a matching box 43 to supply high-frequency power into the insulating tubular tube 41, and electromagnets 45-a, 45-b arranged outside the high-frequency electrode 42. The magnetic field generated by the electrons excites the electron's orbital motion (cyclotron motion), further confines the plasma generated by the discharge, and effectively uses the high-frequency power for the discharge, resulting in a relatively high degree of vacuum (10 -3 -10 -4). Tor
In r), plasma is stably generated inside the insulating tubular tube 41. The material gas is supplied to the insulating tubular tube 41 from the gas cylinder 46 through the valve 47, the flow rate control device 48, the insulating tube 49 made of quartz, ceramics, Teflon, etc.
41 Conductive flange 50-a made of stainless steel etc. on the top
Through the through hole 51 of. A partition wall 52 made of quartz, ceramics or the like is provided on the side of the conductive flange 50-a exposed to the discharge plasma, and the material gas that has passed through the through hole 51 is transmitted through the through hole 53 of the partition wall 52 to the high frequency electrode 42 of the discharge chamber C. Will be introduced during.
Further, the first conductive flange 50-b provided at a position facing the second conductive flange 50-a is provided with a substrate chamber through an insulating flange 54 made of ceramics, quartz, vinyl chloride, acrylic or the like. Provided on D, conductive flange 50-b
A protective coating 55 made of quartz, ceramics or the like is provided on the surface exposed to the charged particles generated by the electric discharge. By connecting the conductive flanges 50-a and 50-b to the DC high voltage sources 56-a and 56-b, respectively, and applying a desired potential, the charged particles in the discharge chamber C are pushed out to the substrate chamber D, Accelerate. The high vacuum chamber 64 that constitutes the substrate chamber D is a vacuum exhaust system.
It is connected to a gas exhaust pipe 58 leading to 57 and kept at a pressure of 10 −3 to 10 −6 Torr. The high vacuum chamber 64 is a vacuum chamber made of metal such as stainless steel or aluminum, and is connected to a ground potential ground wire, or is connected to a ground potential vacuum exhaust device 57 and a metal gas exhaust pipe 58. It is kept at ground potential. Also, an insulating flange 59 made of quartz, ceramics, acrylic, vinyl chloride, etc. and a substrate support rate of 60.
The substrate table 61 fixed inside the substrate chamber D is made of metal such as stainless steel, copper, and aluminum, and the sample 62 is placed on the substrate table 61. Further, by connecting the substrate table 61 to the DC power source 63 and applying a potential, the charged particles accelerated through the conductive flange 50-b are accelerated or decelerated at an additional speed. The charged particles that have obtained kinetic energy according to the potential difference between the conductive flange 50-b and the substrate table 61 are the sample 62 on the substrate table 61.
And the desired amount of impurities is implanted or etched.
発明の効果 本発明は、放電室内の気体放電を、高周波の電力と、静
磁場により励起される電子の旋回運動（サイクロトロン
運動）、並びに放電して生成されるプラズマの磁気的な
閉じ込めによって10-3〜10-4Torrと比較的低い圧力で安
定に起こすことを可能とするものであり、低い圧力であ
ることから、荷電粒子の平均自由行程が放電室から基板
台迄の距離に相等、或いは長くなるため、第１の導電性
バイアス部、及び対向する第２の導電性バイアス部とい
う簡素な構造で、差動排気等を要せずに1kev以上のエネ
ルギーに荷電粒子を加速し、基板台上の半導体等の試料
に照射し、不純物のイオンドープやエッチングを行うこ
とが可能となる。また、高周波電極を放電室の外側に設
けていることにより、放電電極がスパッタリングやエッ
チングされて発生する不純物による試料の汚染を防ぐこ
とが可能となる。さらに、放電の形式から、同じ構造で
大口径の放電室を用いることにより、大面積の試料に対
して一様に荷電粒子を照射することが可能である。以上
の効果は、基板台に電圧を印加すること、ガス導入管を
基板室に接続すること、ガス排出管を放電室に接続する
こと、導電性バイアス部に保護の被覆或いは隔壁を設け
ることを行うことによっても同様に得られる。本発明に
よるプラズマ処理装置は、半導体等への不純物のイオン
ドープやエッチングを行う装置として、極めて簡単でか
つ有用性の高いものである。Effect of the Invention The present invention is a gas discharge in the discharge chamber, and high frequency power, the electronic pivotal movement excited by the static magnetic field (cyclotron motion), as well as discharge plasma magnetic confinement by 10 which is generated - It is possible to stably occur at a relatively low pressure of 3 to 10 -4 Torr.Because of the low pressure, the mean free path of charged particles is equal to the distance from the discharge chamber to the substrate table, or Since it becomes long, the simple structure of the first conductive bias part and the opposing second conductive bias part accelerates charged particles to an energy of 1 kev or more without the need for differential evacuation, etc. By irradiating the sample such as the upper semiconductor, it is possible to perform ion doping of impurities and etching. Further, by providing the high frequency electrode outside the discharge chamber, it becomes possible to prevent the sample from being contaminated by impurities generated by sputtering or etching of the discharge electrode. Further, from the form of discharge, it is possible to uniformly irradiate a large-area sample with charged particles by using a discharge chamber having the same structure and a large diameter. The above effects are that a voltage is applied to the substrate table, a gas introduction pipe is connected to the substrate chamber, a gas discharge pipe is connected to the discharge chamber, and a protective coating or a partition is provided on the conductive bias portion. The same can be obtained by carrying out. The plasma processing apparatus according to the present invention is extremely simple and highly useful as an apparatus for ion-doping and etching impurities into semiconductors and the like.
第１図は本発明に係るプラズマ処理装置の第１実施例の
概略構成図、第２図は本発明に係るプラズマ処理装置の
第１実施例において、電磁石25に流す電流と基板台38に
流れる電流の関係を、基板室Ｂ内の圧力が3.5×10-4,3.
0×10-4,2.5×10-4Torrの場合について示したグラフ、
第３図は本発明に係るプラズマ処理装置の第２実施例の
概略構成図である。第４図は従来の技術のうち直流グロ
ー放電を用いた簡易型イオン注入装置（参考文献１）の
概略構成図、第５図は従来の技術のうち高周波グロー放
電を用いたプラズマCVD装置でイオンドープを行う方法
の概略構成図である。 Ａ……放電室、Ｂ……基板室、21……絶縁性筒状管、22
……高周波電極、31……絶縁管、32,37……絶縁性フラ
ンジ、40……試料。FIG. 1 is a schematic configuration diagram of a first embodiment of a plasma processing apparatus according to the present invention, and FIG. 2 is a current flowing through an electromagnet 25 and a substrate table 38 in the first embodiment of the plasma processing apparatus according to the present invention. The relationship between the electric current and the pressure in the substrate chamber B is 3.5 × 10 −4 , 3.
Graph showing the case of 0 × 10 -4 , 2.5 × 10 -4 Torr,
FIG. 3 is a schematic configuration diagram of a second embodiment of the plasma processing apparatus according to the present invention. FIG. 4 is a schematic configuration diagram of a simple ion implanter using a direct current glow discharge (Reference 1) among the conventional techniques, and FIG. 5 is a plasma CVD device using a high frequency glow discharge among the conventional techniques. It is a schematic block diagram of the method of performing dope. A ... Discharge chamber, B ... Substrate chamber, 21 ... Insulating tubular tube, 22
...... High frequency electrode, 31 …… Insulation tube, 32,37 …… Insulating flange, 40 …… Sample.
Claims (5)
設けられた高周波電極及び磁場発生源から構成される放
電室、ガス排出管と接続された接地電位の高真空室とそ
の内部に設けられた接地電位の基板台から構成される基
板室、前記基板室及び前記放電室と絶縁を保ち前記基板
台と前記放電室の間に第１の直流電源と接続されて設け
た第１の導電性バイアス部、及び前記放電室内に於いて
前記第１の導電性バイアス部と対向する位置に第１の直
流電源又は第２の直流電源と接続して設けた第２の導電
性バイアス部を備えてなることを特徴とするプラズマ処
理装置。1. A discharge chamber composed of an insulating tubular tube, a high-frequency electrode provided outside the insulating tubular tube, and a magnetic field generating source, and a high vacuum chamber of ground potential connected to a gas exhaust tube. A substrate chamber formed of a substrate table having a ground potential provided therein, a substrate chamber and the discharge chamber, which are insulated from each other, are provided between the substrate table and the discharge chamber and connected to a first DC power source. A first conductive bias portion, and a second conductive portion provided in the discharge chamber at a position facing the first conductive bias portion and connected to the first direct current power source or the second direct current power source. A plasma processing apparatus comprising a bias unit.
に設けられた高周波電極及び磁場発生源から構成される
放電室、ガス排出管と接続された接地電位の高真空室と
絶縁を保って第１或いは第２の直流電源と独立した直流
電源と接続して設けられた基板台から構成される基板
室、前記基板室及び前記放電室と絶縁を保ち前記基板台
と前記放電室の間に第１の直流電源と接続されて設けた
第１の導電性バイアス部、及び前記放電室内に於いて前
記第１の導電性バイアス部と対向する位置に第１の直流
電源又は第２の直流電源と接続して設けた第２の導電性
バイアス部を備えてなることを特徴とするプラズマ処理
装置。2. A discharge chamber composed of an insulating tubular tube, a high-frequency electrode and a magnetic field generating source provided outside the insulating tubular tube, and a high vacuum chamber of ground potential connected to a gas exhaust tube. And a substrate chamber constituted by a substrate table provided by being connected to a direct current power source independent of the first or second direct current power source while maintaining insulation, the substrate chamber and the discharge chamber being insulated from the substrate chamber and the substrate chamber. A first conductive bias portion provided between the discharge chamber and connected to the first direct current power source; and a first direct current power source at a position in the discharge chamber facing the first conductive bias portion, or A plasma processing apparatus comprising a second conductive bias portion provided so as to be connected to a second DC power source.
特徴とする特許請求の範囲第１項又は第２項記載のプラ
ズマ処理装置。3. A plasma processing apparatus according to claim 1, wherein a gas introducing pipe is connected to the substrate chamber.
特徴とする特許請求の範囲第１項又は第２項記載のプラ
ズマ処理装置。4. A plasma processing apparatus according to claim 1, wherein a gas introducing pipe is connected to the discharge chamber.
バイアス部の放電して生ずる荷電粒子にさらされる側
に、隔壁或いは表面被覆を設けることを特徴とする特許
請求の範囲第１項又は第２項又は第３項又は第４項記載
のプラズマ処理装置。5. A partition or a surface coating is provided on the side of the first conductive bias portion and the second conductive bias portion exposed to the charged particles generated by the discharge. The plasma processing apparatus according to item 2, item 2, item 3, or item 4.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61225266A JPH07123121B2 (en) | 1986-09-24 | 1986-09-24 | Plasma processing device |
| US07/100,148 US4859908A (en) | 1986-09-24 | 1987-09-23 | Plasma processing apparatus for large area ion irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61225266A JPH07123121B2 (en) | 1986-09-24 | 1986-09-24 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6380534A JPS6380534A (en) | 1988-04-11 |
| JPH07123121B2 true JPH07123121B2 (en) | 1995-12-25 |
Family
ID=16826625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61225266A Expired - Lifetime JPH07123121B2 (en) | 1986-09-24 | 1986-09-24 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07123121B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910544A (en) * | 1988-02-15 | 1990-03-20 | Asahi Kogaku Kogyo K.K. | Focus adjusting apparatus in zoom lens camera |
| US5231449A (en) * | 1988-06-03 | 1993-07-27 | Asahi Kogaku Kogyo Kabushiki Kaisha | Zoom lens barrel and camera incorporating such barrel |
| CA1331429C (en) * | 1988-06-03 | 1994-08-16 | Hiroshi Nomura | Zoom lens barrel and camera incorporating such barrel |
| US5262898A (en) * | 1988-06-03 | 1993-11-16 | Asahi Kogaku Kogyo Kabushiki Kaisha | Zoom lens barrel and camera incorporating such barrel |
| JP2799090B2 (en) * | 1991-09-09 | 1998-09-17 | シャープ株式会社 | Ion implanter |
| JPH0645094A (en) * | 1992-03-31 | 1994-02-18 | Matsushita Electric Ind Co Ltd | Method for generating plasma and device therefor |
| US5763851A (en) * | 1995-11-27 | 1998-06-09 | Applied Materials, Inc. | Slotted RF coil shield for plasma deposition system |
-
1986
- 1986-09-24 JP JP61225266A patent/JPH07123121B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6380534A (en) | 1988-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0271341B1 (en) | Method and apparatus for ion etching | |
| EP0510401B1 (en) | Processing apparatus using plasma | |
| EP0261922B1 (en) | Electrode assembly and apparatus | |
| EP0217361A2 (en) | Ion source | |
| JPH10121240A (en) | Plasma injecting system | |
| JP2970654B1 (en) | Thin film forming equipment | |
| JPH07123121B2 (en) | Plasma processing device | |
| JP2689419B2 (en) | Ion doping equipment | |
| JPH0746586B2 (en) | Ion source | |
| JPH0768618B2 (en) | Plasma processing device | |
| JPH0770512B2 (en) | Low energy ionized particle irradiation device | |
| JPH01302645A (en) | Discharging device | |
| JPH0692638B2 (en) | Thin film device | |
| JPH0798145B2 (en) | Plasma processing device | |
| JP2590502B2 (en) | Impurity doping method | |
| JP3577785B2 (en) | Ion beam generator | |
| JP2929149B2 (en) | Plasma equipment | |
| JPH0816271B2 (en) | Plasma processing device | |
| JPH0378954A (en) | Ion source | |
| JP2703029B2 (en) | Method of introducing impurities into substrate | |
| JP2848590B1 (en) | Electron beam excited plasma generator | |
| JPH0824115B2 (en) | Plasma processing device | |
| JPS59121747A (en) | Method of ion milling | |
| JPS63234519A (en) | Plasma processor | |
| Rao et al. | A versatile broad‐beam ion source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |