JPH0417246A - Fluorescent dot array tube and fluorescent screen forming method - Google Patents
Fluorescent dot array tube and fluorescent screen forming methodInfo
- Publication number
- JPH0417246A JPH0417246A JP11912590A JP11912590A JPH0417246A JP H0417246 A JPH0417246 A JP H0417246A JP 11912590 A JP11912590 A JP 11912590A JP 11912590 A JP11912590 A JP 11912590A JP H0417246 A JPH0417246 A JP H0417246A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- electrode
- forming
- photoresist layer
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000010407 anodic oxide Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 15
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000008151 electrolyte solution Substances 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000004070 electrodeposition Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000012857 radioactive material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
Abstract
Description
【発明の詳細な説明】
に１分夏
本発明は、蛍光体ドツトアレイ管及び蛍光面形成方法関
し１例えば、蛍光表示管、バーコード表示管、光プリン
タの光書き込みデバイス、フラットデイスプレィバネな
どに適用されるものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a phosphor dot array tube and a phosphor screen forming method. applicable.
ｌ米弦！
本発明に係る従来技術を記載した公知文献としては５例
えば特開昭６１−２６７２２４号公報がある。この、特
開昭６１−２６７２２４号公報は、リフトオフ法に関す
るもので、基板上に導電性材料からなる短冊状電極を少
なくとも一列設ける電極形成工程と、グリッド電極と短
冊状電極との接触を避けるために、前記短冊状電極を含
む基板表面に、該短冊状電極の配列方向に沿って該短冊
状電極の一部を露出させる絶縁層を形成してセグメント
電極列を形成する絶縁層形成工程と、前記絶縁層及びセ
グメント電極列をフォトレジスト層で被覆したのち、該
フォトレジスト層を前記セグメント電極列の配列方向に
沿って所望の幅でスリット状に除去して、前記セグメン
ト電極列を露出させるレジスト層形成工程と、露出して
いる前記セグメント電極の一つ一つに蛍光体粒子を付着
させて蛍光面を形成する蛍光面形成工程と、前記フォト
レジスト層を除去するフォトレジスト層除去工程とから
なる蛍光面形成方法が開示されている。L rice string! Publicly known documents describing the prior art related to the present invention include, for example, Japanese Patent Laid-Open No. 61-267224. This Japanese Patent Application Laid-Open No. 61-267224 relates to a lift-off method, which includes an electrode forming process in which at least one row of strip-shaped electrodes made of a conductive material is provided on a substrate, and a method for avoiding contact between the grid electrode and the strip-shaped electrodes. an insulating layer forming step of forming a segment electrode array by forming an insulating layer exposing a part of the strip electrodes along the arrangement direction of the strip electrodes on the surface of the substrate including the strip electrodes; A resist that covers the insulating layer and the segment electrode array with a photoresist layer, and then removes the photoresist layer in the form of a slit with a desired width along the arrangement direction of the segment electrode array to expose the segment electrode array. A layer forming step, a phosphor screen forming step of attaching phosphor particles to each of the exposed segment electrodes to form a phosphor screen, and a photoresist layer removing step of removing the photoresist layer. A method for forming a phosphor screen is disclosed.
また、特開昭６４−２６７２２２４号公報は、電着方法
に関するもので、電着基板上に配列形成された多数のセ
グメント電極に蛍光体粒子を電着する方法が開示されて
いる。すなわち、この蛍光面形成方法では、まず、短冊
状の陽極電極及び絶縁層を形成した後、フォトレジスト
を用いて蛍光体が付着するドツトパターンを形成してか
ら蛍光体を付着させ、フォトレジスト層を除去して蛍光
面を形成する方法である。Furthermore, Japanese Patent Application Laid-Open No. 64-2672224 relates to an electrodeposition method, and discloses a method of electrodepositing phosphor particles onto a large number of segment electrodes arranged in an array on an electrodeposition substrate. That is, in this method of forming a phosphor screen, first, a strip-shaped anode electrode and an insulating layer are formed, and then a dot pattern to which the phosphor is attached is formed using a photoresist, and then the phosphor is attached, and then a photoresist layer is formed. In this method, a phosphor screen is formed by removing the phosphor.
第３図（ａ）、（ｂ）は、蛍光体ドツトアレイ管の従来
の構成図で、図（、）は全体斜視図、図（ｂ）は図（、
）の■−■線断面図である。図中、２１はガラス基板、
２２はアルミ陽極電極、２３は蛍光体（発光体）セグメ
ント、２４ａ、２４ｂは絶縁体層、２５ａ、２５ｂは制
御（グリッド）電極、２６は陰極電極、２７は高真空室
（１０−７ｔｏｒｒ以下）、２８はフェースガラスであ
る。ガラス基板２１には、一連の蛍光体セグメント２３
が該ガラス基板２１の長手方向に列設されていて、この
蛍光体セグメント２３にはその個々に蛍光面とアルミ陽
極電極２２が形成されている。前記ガラス基板２１の蛍
光面の配列の両側には、絶縁体層２４ａ、２４ｂがガラ
ス基板２１の長手方向に沿って形成され、該絶縁体層２
４ａ、２４ｂは。Figures 3(a) and 3(b) are diagrams of the conventional structure of a phosphor dot array tube, with figure (,) being an overall perspective view, and figure (b) being figure (,
) is a sectional view taken along the line ■-■. In the figure, 21 is a glass substrate;
22 is an aluminum anode electrode, 23 is a phosphor (light emitter) segment, 24a, 24b are insulator layers, 25a, 25b are control (grid) electrodes, 26 is a cathode electrode, 27 is a high vacuum chamber (10-7 torr or less) , 28 is a face glass. A series of phosphor segments 23 are provided on the glass substrate 21.
are arranged in a row in the longitudinal direction of the glass substrate 21, and each of the phosphor segments 23 has a phosphor screen and an aluminum anode electrode 22 formed thereon. Insulator layers 24a and 24b are formed along the longitudinal direction of the glass substrate 21 on both sides of the phosphor screen arrangement of the glass substrate 21.
4a and 24b.
制御電極２５ａ、２５ｂがそれぞれ形成されている。ガ
ラス基板２１の長手方向に陰極電極２６が張り渡され、
表面に電子放射性物質を塗布されている。また、ガラス
等からなる透明な材料で形成されたフェースガラス２８
は、ガラス基板側と一体化される。このようにガラス基
板２１と絶縁体層２４ａ、２４ｂと制御電極２５ａ、２
５ｂとフェースガラス２８とにより閉空間を形成し、該
空間内には、蛍光体セグメント２３と陰極電極２６が閉
じ込められている。上記閉空間は高度に真空化されてい
る。Control electrodes 25a and 25b are formed, respectively. A cathode electrode 26 is stretched in the longitudinal direction of the glass substrate 21,
Electron radioactive material is coated on the surface. In addition, a face glass 28 formed of a transparent material such as glass
is integrated with the glass substrate side. In this way, the glass substrate 21, the insulator layers 24a, 24b, and the control electrodes 25a, 2
5b and the face glass 28 form a closed space, within which the phosphor segment 23 and the cathode electrode 26 are confined. The closed space is highly evacuated.
制御電極２５ａ、２５ｂに適宜の電圧を印加しておいて
、陰極電極２６に交流電流を通ずると、該陰極電極２６
は、ジュール熱によって加熱されて熱電子を放出する。When an appropriate voltage is applied to the control electrodes 25a and 25b and an alternating current is passed through the cathode electrode 26, the cathode electrode 26
is heated by Joule heat and emits thermoelectrons.
かかる状態において、蛍光体セグメント２３の一つに正
電圧を印加してこれを正電位にすると、上記熱電子は正
電位の蛍光体セグメント２３の電極部に引き寄せられ、
該電極部に吸い込まれるとき蛍光面の蛍光物質のエネル
ギー状態を励起させる。励起した蛍光物質は、基底状態
へ戻る際に蛍光を発する。この蛍光はフェースガラス２
８を介して観察される。In this state, when a positive voltage is applied to one of the phosphor segments 23 to make it a positive potential, the thermoelectrons are attracted to the electrode portion of the phosphor segment 23 at a positive potential,
When absorbed into the electrode part, the energy state of the fluorescent substance on the fluorescent screen is excited. The excited fluorescent substance emits fluorescence when returning to the ground state. This fluorescence is on the face glass 2.
observed through 8.
第４図は、蛍光体ドツトアレイ管の蛍光面形成方法の従
来例を示す図で、この方法は一般に前述したりフトオフ
法と呼ばれている１図中、５１は基板、５２は陽極電極
、５３は絶縁層、５４はレジスト層、５５．５６はマス
ク、５７は蛍光体ドツトである。まず、電極形成工程に
おいて、基板５１上に陽極電極５２を形成し、次の絶縁
層形成工程で絶縁層５３が形成される。次のフォトレジ
スト層形成工程において、まず、（ａ）の工程でフォト
レジストで基板５１を被覆してレジスト層５４を形成し
た後に、（ｂ）、（ｃ）の工程で蛍光体の付着する部分
をマスク５５．５６を用いて現像露光で除去する。（ｄ
）の蛍光面形成工程において、電着などの方法により上
記露出した電極部に蛍光体を付着させ、フォトレジスト
層除去工程において、最後に残ったレジスト層を焼成な
どの方法により除去して蛍光体ドツト５７を形成するも
のである。FIG. 4 is a diagram showing a conventional method for forming a phosphor screen of a phosphor dot array tube. 54 is an insulating layer, 54 is a resist layer, 55 and 56 are masks, and 57 is a phosphor dot. First, in an electrode forming step, an anode electrode 52 is formed on a substrate 51, and an insulating layer 53 is formed in the next insulating layer forming step. In the next photoresist layer forming step, first, in step (a), the substrate 51 is coated with photoresist to form a resist layer 54, and then in steps (b) and (c), the portion to which the phosphor is attached is is removed by development exposure using masks 55 and 56. (d
) In the phosphor screen forming process, a phosphor is attached to the exposed electrode part by a method such as electrodeposition, and in the photoresist layer removal process, the last remaining resist layer is removed by a method such as baking to form a phosphor. This forms dots 57.
第５図（ａ）、（ｂ）は、実際に蛍光体を付着させる方
法の一例を示す図で、一般には電気泳動法（電着）−と
呼ばれている。図中、６０は撹拌翼、６１は基板、６２
は陽極電極、６３は絶縁層。FIGS. 5(a) and 5(b) are diagrams showing an example of a method for actually depositing a phosphor, which is generally called electrophoresis (electrodeposition). In the figure, 60 is a stirring blade, 61 is a substrate, 62
is an anode electrode, and 63 is an insulating layer.
６４はレジスト層、６５はマスク、６６は電源、６７は
モータ、６８は分散媒体（蛍光体、ＩＰＡ；イソプロピ
ルアルコールなど）である、蛍光体を含む分散媒体（溶
媒としてはＩＰＡを用いる）を撹拌翼により撹拌し、対
向電極とセグメント電極との間に電界をかけることによ
り蛍光体を前述した所望の場所に付着させる。フォトレ
ジストは精度上の問題によりポジタイプを用いる（例え
ば、東京応化社製の０ＦＰＲ８００など）、ポジタイプ
のフォトレジストは１通常電着時に分散媒体として用い
るＩＰＡなどの有機溶媒に溶解してしまうので、溶解し
ないように紫外線などを照射してハードニングを行ない
蛍光体を付着させた後、焼成などによりレジスト層を除
去する。64 is a resist layer, 65 is a mask, 66 is a power source, 67 is a motor, and 68 is a dispersion medium (phosphor, IPA; isopropyl alcohol, etc.), which stirs the dispersion medium containing the phosphor (IPA is used as the solvent). The phosphor is attached to the desired location by stirring with a blade and applying an electric field between the counter electrode and the segment electrode. Positive-type photoresists are used due to precision issues (for example, 0FPR800 manufactured by Tokyo Ohka Co., Ltd.).Positive-type photoresists are usually dissolved in organic solvents such as IPA used as dispersion media during electrodeposition, so it is difficult to dissolve them. After hardening the resist layer by irradiating it with ultraviolet rays and attaching the phosphor to prevent the resist from burning, the resist layer is removed by baking or the like.
このレジスト除去の際、付着している蛍光体がその雰囲
気により蛍光体自身の発光効率や発光寿命を低下させら
れてしまうなどの影響がある。また、基板の長平方向に
わたって均一に十分なレジストのハードニングが行なわ
れなかった場合、電着時にレジストが溶解して適切な蛍
光体ドツトが形成できなかったり、電着液を汚染したり
、また逆に、部分的に過剰なハードニングがされた場合
、通常の焼成条件ではレジストが除去できずに基板上に
残ってしまい管球化後の輝度や寿命などの特性に悪影響
することが考えられる。When this resist is removed, the attached phosphor is affected by the atmosphere, such as reducing the luminous efficiency and luminous life of the phosphor itself. Additionally, if the resist is not hardened uniformly and sufficiently over the long and horizontal directions of the substrate, the resist may dissolve during electrodeposition, making it impossible to form appropriate phosphor dots, contaminating the electrodeposition solution, or On the other hand, if excessive hardening is done in some areas, the resist cannot be removed under normal firing conditions and remains on the substrate, which may adversely affect characteristics such as brightness and lifespan after tube formation. .
また、信頼性の観点から従来より蛍光表示管に用いられ
ている絶縁層はＡｌなどの短冊状電極を直接覆うように
スクリーン印刷などの方法により形成されているが、こ
の絶縁層は酸化鉛を主成分とする硼硅酸鉛ガラスで構成
されているため腐食性が高く、短冊状電極であるＡｌを
劣化させてしまう、スクリーン印刷で塗布された後、大
気中５５０〜６００℃の条件で焼成する際や高湿な雰囲
気による水の付着によりＡｔ電極が腐食されてしまい、
腐食はＡｌ薄膜と絶縁層との界面で生じることにより、
電気伝導度が著しく低下してしまうという問題が生じる
。In addition, from the viewpoint of reliability, the insulating layer conventionally used in fluorescent display tubes is formed by a method such as screen printing so as to directly cover the strip-shaped electrodes such as Al, but this insulating layer is made of lead oxide. Since it is composed of lead borosilicate glass as the main component, it is highly corrosive and deteriorates the Al that is the strip electrode. After being applied by screen printing, it is fired in the atmosphere at 550 to 600 degrees Celsius. The At electrode is corroded due to water adhesion due to the high humidity atmosphere.
Corrosion occurs at the interface between the Al thin film and the insulating layer,
A problem arises in that electrical conductivity is significantly reduced.
目 的
本発明は、上述のごとき実情に鑑みてなされたもので、
レジストによる蛍光体ドツトパターンではなく、全工程
にわたって蛍光体自身に影響せず、かつ管球化後の諸特
性にもまったく影響しないように構成すること、また、
腐食しゃすいＡｌ薄膜の表面をある程度酸化させて絶縁
膜にすることによって、絶縁層との界面に生じる腐食を
発生させないように構成された蛍光体ドツトアレイ管及
び蛍光面形成方法を提供することを目的としてなされた
ものである。Purpose The present invention was made in view of the above-mentioned circumstances.
Rather than using a resist-based phosphor dot pattern, the phosphor itself should not be affected throughout the entire process, and the properties after tube formation should also not be affected at all.
It is an object of the present invention to provide a phosphor dot array tube and a method for forming a phosphor screen, which are configured to prevent corrosion from occurring at the interface with the insulating layer by oxidizing the surface of a corrosion-prone Al thin film to some extent to form an insulating film. This was done as a.
碧−一一収
本発明は、上記目的を達成するために、（１）導電性材
料で短冊状の陽極電極を形成した基板と、前記陽極電極
の表面に蛍光体を付着させ、アレイ状に配置されたドツ
トパターン状の複数の発光セグメントと、前記陽極電極
上に絶縁層に介して設けられたグリッド電極と、該グリ
ッド電極を覆うフェイスガラス内で前記蛍光体上に設け
られた陰極電極とから成り、該陰極電極から発生する熱
電子を前記グリッド電極で加速制御し、前記蛍光体に熱
電子を射突させて該蛍光体を発光させるように構成した
蛍光体ドツトアレイ管において、前記蛍光体が付着して
いる部分以外の陽極電極の表面を酸化させて絶縁皮膜を
設けたこと、更には、（２）基板上に導電性材料からな
る短冊状の陽極電極を少なくとも一列設ける電極形成工
程と、前記短冊状の陽極電極を含む前記基板表面をフォ
トレジスト層で被覆した後、前記短冊状の陽極電極列上
で蛍光体が付着しない電極部のフォトレジスト層を除去
して蛍光体が付着する電極部をフォトレジスト層で被覆
させるフォトレジスト層形成工程と、前記フォトレジス
ト層が被覆されていない電極部の表面に陽極酸化被膜を
形成する陽極酸化被膜形成工程と、前記蛍光体が付着す
る電極部のフォトレジスト層を除去するフォトレジスト
層除去工程と、前記短冊状の陽極電極を含む前記基板表
面に、該短冊状の陽極電極の配列方向に沿って前記短冊
状の陽極電極の一部を露出させる絶縁層を形成してセグ
メント電極列を形成する絶縁層形成工程と、陽極酸化被
膜を形成していない前記セグメント電極列のうち蛍光体
が付着する電極部分の一つ一つに蛍光体を付着させて蛍
光面を形成する蛍光面形成工程とにより、蛍光体ドツト
アレイを形成するようにしたことを特徴としたものであ
る。以下１本発明の実施例に基づいて説明する。In order to achieve the above object, the present invention provides (1) a substrate on which a rectangular anode electrode is formed of a conductive material, a phosphor attached to the surface of the anode electrode, and a phosphor arranged in an array. a plurality of light emitting segments arranged in a dot pattern; a grid electrode provided on the anode electrode via an insulating layer; and a cathode electrode provided on the phosphor within a face glass covering the grid electrode. The phosphor dot array tube is configured such that thermionic electrons generated from the cathode electrode are accelerated and controlled by the grid electrode, and the thermionic electrons are made to impinge on the phosphor to cause the phosphor to emit light. (2) an electrode forming step in which at least one row of strip-shaped anode electrodes made of a conductive material is provided on the substrate; , after coating the surface of the substrate including the strip-shaped anode electrode with a photoresist layer, the photoresist layer on the electrode portion where the phosphor does not adhere on the strip-shaped anode electrode array is removed, and the phosphor is attached. a photoresist layer forming step of covering the electrode portion with a photoresist layer; an anodic oxide film forming step of forming an anodic oxide film on the surface of the electrode portion not covered with the photoresist layer; and an electrode to which the phosphor is attached. a photoresist layer removal step of removing a portion of the photoresist layer, and a part of the strip-shaped anode electrode is removed on the substrate surface including the strip-shaped anode electrode along the arrangement direction of the strip-shaped anode electrode. an insulating layer forming step in which an exposed insulating layer is formed to form a segment electrode array; and a phosphor is applied to each electrode portion of the segment electrode array on which the anodized film is not formed, to which the phosphor is attached. The method is characterized in that a phosphor dot array is formed by a phosphor screen forming step in which a phosphor dot is deposited to form a phosphor screen. An explanation will be given below based on one embodiment of the present invention.
第１図及び第２図は、本発明による蛍光体ドツトアレイ
管の蛍光面形成方法の一実施例を説明するための工程図
で、図中、１は基板、２は短冊状のアルミ（Ａｌ）陽極
電極、３は絶縁層、４はフォトレジスト、５はマスクの
透過部、６はマスクの遮断部、７は蛍光体ドツト、１３
は陽極酸化皮膜である。1 and 2 are process diagrams for explaining one embodiment of the method for forming a phosphor screen of a phosphor dot array tube according to the present invention. In the figures, 1 is a substrate, 2 is a strip of aluminum (Al) Anode electrode, 3 is an insulating layer, 4 is a photoresist, 5 is a transparent part of the mask, 6 is a blocking part of the mask, 7 is a fluorescent dot, 13
is an anodized film.
以下、蛍光面形成工程に従って順に説明する。Hereinafter, the steps for forming the phosphor screen will be explained in order.
図（ａ）の工程；電極形成工程においては、まずＡＩな
どの導電性材料をスパッタなどの方法により基板１上に
形成させ、通常のフォトリソグラフィ工程により短冊状
のＡｌ配線パターンの陽極電極２を形成する。Step in Figure (a): In the electrode forming step, first a conductive material such as AI is formed on the substrate 1 by a method such as sputtering, and an anode electrode 2 having a rectangular Al wiring pattern is formed by a normal photolithography step. Form.
図（ｂ）〜（ｄ）の工程；次に、フォトレジストをＡｌ
配線パターンが形成された基板上にスピンナーなとの方
法により塗布し、蛍光体が付着する部分にのみレジスト
４を残すようなマスク５゜６を用いてレジストのパター
ニングを行なう。Steps in Figures (b) to (d); Next, the photoresist is
The resist is applied onto a substrate on which a wiring pattern has been formed using a method such as a spinner, and the resist is patterned using a mask 5.6 which leaves the resist 4 only in the areas to which the phosphor is to be attached.
図（ｅ）の工程；フォトレジストはポジ型でもネガ型で
もよい、ポストベイクなどを施してレジスト膜の耐薬品
性を向上させた後、露出しているＡ１電極及び配線を陽
極として絶縁性皮膜１３を生じる電解質の溶液中で電界
酸化させる。電解質としては電界酸化してすぐに電圧が
急速に著しく上昇して電流が止まり、膜が増厚しないも
のを使用したほうがよい、膜が増厚するものでも構わな
いが時間の管理が離しい、膜が増厚しないものとしては
、例えばホウ酸やホウ酸アンモン、シュウ酸アンモン、
特殊の混酸（ホウ酸ｉ００ｇｔホウ砂１ｇ、純蒸留水で
１リツトルにうすめたもの）などがあり、純ＡＩに対し
てシュウ酸アンモン電解液として用いた場合、約１３．
０人／Ｖ、電流効率８０％の条件で陽極皮膜厚さ２００
０〜４０００人をつくることができる。この条件でつく
られた膜の比重は約３．２ｇ／ｃｍ”である（１次化成
）、そして中性溶液による２次化成を行ない純水により
水洗する。Step in Figure (e): The photoresist may be of positive type or negative type. After applying post-baking to improve the chemical resistance of the resist film, the exposed A1 electrode and wiring are used as anodes to form an insulating film 13. is subjected to electric field oxidation in an electrolyte solution that produces As an electrolyte, it is better to use an electrolyte that does not cause the film to thicken because the voltage increases rapidly and significantly immediately after electric field oxidation, and the film does not thicken.Although it is okay to use an electrolyte that thickens the film, it is difficult to manage the time. Examples of substances that do not thicken the film include boric acid, ammonium borate, ammonium oxalate,
There are special mixed acids (boric acid i00gt borax 1g, diluted to 1 liter with pure distilled water), etc., and when used as an ammonium oxalate electrolyte for pure AI, it is about 13.
0 person/V, anode film thickness 200% under conditions of current efficiency 80%
Can create 0 to 4000 people. The membrane produced under these conditions has a specific gravity of approximately 3.2 g/cm'' (primary chemical formation), and is subjected to secondary chemical formation using a neutral solution and washed with pure water.
図（ｆ）の工程；陽極酸化皮膜形成終了後、余分なレジ
ストを除去すれば蛍光体が付着する部分のＡｌ電極が露
出される。Step (f): After the anodic oxide film is formed, excess resist is removed to expose the Al electrode where the phosphor will be attached.
図（ｇ）の工程；次に、従来より用いられている絶縁層
３をスクリーン印刷により形成する。Step (g): Next, the insulating layer 3, which has been conventionally used, is formed by screen printing.
図（ｈ）の工程；その後、第５図に示すような電着装置
により蛍光体を露出しているＡｌ電極部に付着させれば
所望の蛍光体ドツトアレイを得ることができる。Step shown in FIG. 5(h): After that, a desired phosphor dot array can be obtained by depositing phosphor on the exposed Al electrode portion using an electrodeposition apparatus as shown in FIG.
このようにして作られた蛍光体ドツトアレイは、管球化
工程でレジストにより汚染がなく、また、Ａｌ電極や配
線と絶縁層が直接に接していないので従来の腐食による
Ａｌ電極や配線の断線の発生が著しく改善される。The phosphor dot array produced in this way is not contaminated by resist during the tube-making process, and since the Al electrodes and wiring are not in direct contact with the insulating layer, there is no possibility of disconnection of the Al electrodes or wiring due to conventional corrosion. Development is significantly improved.
第２図は、第１図に示した蛍光面形成工程のフローを示
す図で、前述したように電極形成工程→フォトレジスト
層形成工程→陽極酸化皮膜形成工程→フォトレジスト層
除去工程→絶縁層形成工程→蛍光面形成工程を経て本発
明による蛍光面が形成されることになる。FIG. 2 is a diagram showing the flow of the phosphor screen forming process shown in FIG. The phosphor screen according to the present invention is formed through the steps of forming process → phosphor screen forming process.
夏−一見
以上の説明から明らかなように、本発明によると、以下
のような効果がある。Summer - As is clear from the above explanation, the present invention has the following effects.
（１）請求項１に対応する効果５蛍光体ドツトアレイ管
においてＡＩ陽極電極や配線が絶縁層や外界水分とによ
って腐食されないような構造、にしているので、管球化
後の蛍光体発光輝度のばらつきが小さくなり、経時的な
Ａ１陽極電極や配線による部分的な輝度低下が押さえら
れ、プリンターなどの光書き込み用として十分使用に耐
えられるようになる。（２）請求項２に対応する効果；
蛍光体ドツトアレイ管の蛍光面形成方法において、蛍光
体ドツトにレジスト雰囲気による悪影響が及ばないよう
にしているので、蛍光体の発光効率が低下することなく
十分な発光輝度を得ることができ、蛍光面形成における
信頼性を向上させることができる。(1) Effect 5 corresponding to claim 1 Since the structure of the phosphor dot array tube is such that the AI anode electrode and wiring are not corroded by the insulating layer or external moisture, the luminance of the phosphor after tube formation is reduced. Variations are reduced, local brightness reduction due to the A1 anode electrode and wiring over time is suppressed, and it can be used for optical writing in printers and the like. (2) Effects corresponding to claim 2;
In the phosphor screen formation method of the phosphor dot array tube, the phosphor dots are prevented from being adversely affected by the resist atmosphere, so sufficient luminous brightness can be obtained without reducing the luminous efficiency of the phosphor, and the phosphor screen Reliability in formation can be improved.
第１図は、本発明による蛍光体ドツトアレイ管の蛍光面
形成方法の一実施例を説明するための工程図、第２図は
、蛍光面形成工程のフローを示す図、第３図は、蛍光体
ドツトアレイ管の従来例を示す構成図、第４図は、蛍光
体ドツトアレイ管の蛍光面形成方法の従来例を示す図、
第５図は、蛍光体を付着させる方法の一例を示す図であ
る。
１・・・基板、２・・・短冊状のアルミ（Ａ１）陽極電
極、３・・・絶縁層、４・・・フォトレジスト、５・・
・マスクの透過部、６・・・マスクの遮断部、７・・・
蛍光体ドツト。
１３・・・陽極酸化皮膜。
第
図
第
図
（ｂ）FIG. 1 is a process diagram for explaining an embodiment of the method for forming a phosphor screen of a phosphor dot array tube according to the present invention, FIG. 2 is a diagram showing the flow of the phosphor screen forming process, and FIG. FIG. 4 is a diagram showing a conventional example of a method for forming a phosphor screen of a phosphor dot array tube;
FIG. 5 is a diagram showing an example of a method for attaching phosphor. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Strip-shaped aluminum (A1) anode electrode, 3... Insulating layer, 4... Photoresist, 5...
- Transmissive part of the mask, 6... Blocking part of the mask, 7...
Phosphor dots. 13...Anodic oxide film. Figure (b)
Claims (1)
前記陽極電極の表面に蛍光体を付着させ、アレイ状に配
置されたドットパターン状の複数の発光セグメントと、
前記陽極電極上に絶縁層に介して設けられたグリッド電
極と、該グリッド電極を覆うフェイスガラス内で前記蛍
光体上に設けられた陰極電極とから成り、該陰極電極か
ら発生する熱電子を前記グリッド電極で加速制御し、前
記蛍光体に熱電子を射突させて該蛍光体を発光させるよ
うに構成した蛍光体ドットアレイ管において、前記蛍光
体が付着している部分以外の陽極電極の表面を酸化させ
て絶縁皮膜を設けたことを特徴とする蛍光体ドットアレ
イ管。 ２、基板上に導電性材料からなる短冊状の陽極電極を少
なくとも一列設ける電極形成工程と、前記短冊状の陽極
電極を含む前記基板表面をフォトレジスト層で被覆した
後、前記短冊状の陽極電極列上で蛍光体が付着しない電
極部のフォトレジスト層を除去して蛍光体が付着する電
極部をフォトレジスト層で被覆させるフォトレジスト層
形成工程と、前記フォトレジスト層が被覆されていない
電極部の表面に陽極酸化被膜を形成する陽極酸化被膜形
成工程と、前記蛍光体が付着する電極部のフォトレジス
ト層を除去するフォトレジスト層除去工程と、前記短冊
状の陽極電極を含む前記基板表面に、該短冊状の陽極電
極の配列方向に沿って前記短冊状の陽極電極の一部を露
出させる絶縁層を形成してセグメント電極列を形成する
絶縁層形成工程と、陽極酸化被膜を形成していない前記
セグメント電極列のうち蛍光体が付着する電極部分の一
つ一つに蛍光体を付着させて蛍光面を形成する蛍光面形
成工程とにより、蛍光体ドットアレイを形成するように
したことを特徴とする蛍光面形成方法。[Claims] 1. A substrate on which a rectangular anode electrode is formed of a conductive material;
a plurality of light-emitting segments in a dot pattern arranged in an array by attaching a phosphor to the surface of the anode electrode;
It consists of a grid electrode provided on the anode electrode via an insulating layer, and a cathode electrode provided on the phosphor within the face glass covering the grid electrode, and the thermoelectrons generated from the cathode electrode are In a phosphor dot array tube configured to perform acceleration control using a grid electrode to cause thermionic electrons to strike the phosphor and cause the phosphor to emit light, the surface of the anode electrode other than the portion to which the phosphor is attached. A phosphor dot array tube characterized by having an insulating film formed by oxidizing the phosphor. 2. An electrode forming step of providing at least one row of strip-shaped anode electrodes made of a conductive material on a substrate; and after coating the substrate surface including the strip-shaped anode electrodes with a photoresist layer, forming the strip-shaped anode electrodes on the substrate; A photoresist layer forming step of removing the photoresist layer of the electrode part on the column to which the phosphor does not adhere and covering the electrode part to which the phosphor adheres with a photoresist layer, and the electrode part not covered with the photoresist layer. an anodic oxide film forming step of forming an anodic oxide film on the surface of the substrate, a photoresist layer removing step of removing the photoresist layer of the electrode portion to which the phosphor is attached, and a step of removing the photoresist layer on the surface of the substrate including the strip-shaped anode electrode. , an insulating layer forming step of forming a segment electrode array by forming an insulating layer that exposes a part of the strip-shaped anode electrodes along the arrangement direction of the strip-shaped anode electrodes, and forming an anodic oxide film. A phosphor dot array is formed by a phosphor screen forming step of forming a phosphor screen by attaching phosphor to each electrode portion of the segment electrode array to which phosphor is attached. Characteristic fluorescent screen formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11912590A JPH0417246A (en) | 1990-05-09 | 1990-05-09 | Fluorescent dot array tube and fluorescent screen forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11912590A JPH0417246A (en) | 1990-05-09 | 1990-05-09 | Fluorescent dot array tube and fluorescent screen forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0417246A true JPH0417246A (en) | 1992-01-22 |
Family
ID=14753562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11912590A Pending JPH0417246A (en) | 1990-05-09 | 1990-05-09 | Fluorescent dot array tube and fluorescent screen forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0417246A (en) |
-
1990
- 1990-05-09 JP JP11912590A patent/JPH0417246A/en active Pending
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