JPH0416593A - Method and device for vapor synthesis of diamond - Google Patents
Method and device for vapor synthesis of diamondInfo
- Publication number
- JPH0416593A JPH0416593A JP11775290A JP11775290A JPH0416593A JP H0416593 A JPH0416593 A JP H0416593A JP 11775290 A JP11775290 A JP 11775290A JP 11775290 A JP11775290 A JP 11775290A JP H0416593 A JPH0416593 A JP H0416593A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- voltage
- thermionic
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 61
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims description 26
- 230000015572 biosynthetic process Effects 0.000 title claims description 19
- 238000003786 synthesis reaction Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 56
- 239000007789 gas Substances 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 239000012808 vapor phase Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- 238000001530 Raman microscopy Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Natural products CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- -1 benzene Chemical compound 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- BLKSZHIKPAVOIP-UHFFFAOYSA-N [C]=O.CC(=O)C Chemical compound [C]=O.CC(=O)C BLKSZHIKPAVOIP-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、ダイヤモンドの気相合成方法及び装置に係り
、詳しくは、含炭素化合物と水素との混合ガスを加熱さ
れた熱電子放射材により熱分解し、熱電子放射材に対し
て正又は負の直流電圧を印加した基体上に導きダイヤモ
ンドを合成する方法及び装置に関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method and apparatus for vapor phase synthesis of diamond. The present invention relates to a method and apparatus for synthesizing diamond by thermally decomposing the thermionic emitting material and guiding it onto a substrate to which a positive or negative DC voltage is applied.
〈従来の技術〉
ダイヤモンドは高硬度、広バンドギャップ、高熱伝導度
、光学的透明度、耐放射線性、化学的安定性等の優れた
性質を有しているため、例えば切削、研慶材、絶縁体、
ヒートシンク、宇宙空間用窓材等へ応用されており、ま
た適当なドーピング材を添加する事により発光素子、高
電力半導体等への応用も可能な、有用な工業材料である
。<Conventional technology> Diamond has excellent properties such as high hardness, wide band gap, high thermal conductivity, optical transparency, radiation resistance, and chemical stability, so it is used as a cutting material, abrasive material, and insulation material. body,
It is a useful industrial material that has been applied to heat sinks, space window materials, etc., and can also be applied to light emitting devices, high power semiconductors, etc. by adding appropriate doping materials.
従来ダイヤモンドは、天然品を採掘するかあるいは黒鉛
等の炭素を高温高圧下で処理することにより得ていたが
、これらの方法は大規模で高価な装置を利用するためコ
ストがかさむ上、塊状の結晶しか得られない、そこでこ
れに代るものとして、気相合成する技術が開発された。Traditionally, diamonds have been obtained by mining natural products or by processing carbon such as graphite under high temperature and pressure, but these methods require large-scale and expensive equipment, which increases costs and creates lumps. Only crystals could be obtained, so a gas phase synthesis technique was developed as an alternative.
開発された各種気相合成方法の内、主要な手法は次の２
つである。Among the various gas phase synthesis methods that have been developed, the following two are the main methods.
It is one.
１、 熱電子放射材による熱分解を用いた方法（例えば
、特開昭５８−９１１００号公報等、以下熱分解法と呼
ぶ）。1. A method using thermal decomposition using a thermionic emitting material (for example, JP-A-58-91100, etc., hereinafter referred to as the thermal decomposition method).
２ マイクロ波、直流放電、高周波放電等によりプラズ
マを発生させ、プラズマ中の反応を用いる方法（例えば
、特開昭５８−１１０４９４号公報等）。2. A method in which plasma is generated using microwaves, direct current discharge, high frequency discharge, etc., and reactions in the plasma are used (for example, Japanese Patent Laid-Open Publication No. 110494/1983).
上記の方法のうち大面積化が比較的容易であると考えら
れるのは熱分解法であるが、熱電子放射材と展着基体の
間に直流電圧を印加し、熱電子放射材から基体に到達す
る熱電子の量を制御Ｂする技術が開発された。例えば特
開昭６０−２２１３９５号公報には、蒸着基体が正、熱
電子放射材が負となるように直流電圧を印加することで
、成膜速度を向上させる技術が開示されている。また本
願出願人は、既に蒸着基体が負、熱電子放射材が正とな
るように直流電圧を印加する技術を開発し、特許願平成
！年第９７６３６号として出願している。Among the above methods, the thermal decomposition method is considered to be relatively easy to increase the area, but it involves applying a DC voltage between the thermionic emissive material and the spread substrate. A technology has been developed to control the amount of hot electrons that arrive. For example, Japanese Unexamined Patent Publication No. 60-221395 discloses a technique for improving the film formation rate by applying a DC voltage such that the deposition substrate is positive and the thermionic emission material is negative. In addition, the applicant has already developed a technique for applying a DC voltage so that the vapor deposition substrate is negative and the thermionic emissive material is positive, and has filed a patent application! It has been filed as No. 97636.
ところで、容易に着想し得る事であるが、上述の熱分解
法に於いて大面積に効率よくダイヤモンドを析出せしめ
るには、熱電子放射材の広がり面積を大とすればよい。By the way, it is easy to imagine that in order to efficiently deposit diamond over a large area in the above-mentioned pyrolysis method, the spread area of the thermionic emission material should be increased.
例えば、熱電子放射材として金属のフィラメントを用い
ている場合には、これを複数本出来るだけ長い距離に亘
って配置する。For example, when a metal filament is used as the thermionic emission material, a plurality of metal filaments are arranged over a distance as long as possible.
熱電子放射材として金属のメツシュ、板、管等を用いて
いる場合には、これを出来るだけ大面積とする。そして
これらの場合に於いて、熱電子放射材をダイヤモンド生
成に適した温度とするには、熱電子放射材自身を通電加
熱するか、外部の熱源を用いて加熱する。If a metal mesh, plate, tube, etc. is used as the thermionic emitting material, the area should be as large as possible. In these cases, in order to bring the thermionic emissive material to a temperature suitable for diamond production, the thermionic emissive material itself is heated with electricity or heated using an external heat source.
しかしながら、発明者らが上述の熱分解法を用い、熱電
子放射材上基板との間に正又は負の直流電圧を印加して
ダイヤモンド膜の気相合成を行ったところ、得られたダ
イヤモンドの膜厚や結晶性は層全体に亘って均一でなく
、特に成膜面積が大であるほど均一性が低下するという
問題点を有していることが判明した。However, when the inventors performed vapor phase synthesis of a diamond film by applying a positive or negative DC voltage between the thermionic emissive material and the substrate using the above-mentioned pyrolysis method, the resulting diamond film It has been found that the film thickness and crystallinity are not uniform over the entire layer, and in particular, the problem is that the uniformity decreases as the film formation area becomes larger.
〈発明が解決しようとする！ＩＩ！ｌ＞本発明の目的は
、この問題点を解決し、成膜面積が大であっても、層全
体に亘って均一な膜厚や結晶性を有するダイヤモンドの
気相合成方法及び装置を提案することである。<Invention tries to solve! II! l> The purpose of the present invention is to solve this problem and to propose a method and apparatus for vapor phase synthesis of diamond that has uniform film thickness and crystallinity over the entire layer even if the film is formed on a large area. That's true.
＜ｉＪＢを解決するための手段〉
本発明者らは、熱電子放射材と基板との間に直流電圧を
印加した熱分解法に於いて、上記問題点解決の為、種々
の調査検討と試行を重ねた結果、本発明を得るに至った
。<Means for solving iJB> The present inventors have conducted various investigations and trials in order to solve the above problems in the thermal decomposition method in which a DC voltage is applied between the thermionic emitting material and the substrate. As a result of repeated efforts, the present invention was obtained.
即ち本発明は、含炭素化合物と水素との混合ガスを加熱
された熱電子放射材により熱分解し、核熱電子放射材に
対して正又は負の直流電圧を印加した基体上に導きダイ
ヤモンドを合成する方法において、該熱電子放射材に複
数の直流電圧印加端を設け、夫りに直流電圧を印加する
ことを特徴とするダイヤモンドの気相合成方法であり、
望ましくは熱電子放射材上の複数の直流電圧印加端の電
圧を全て同一にすることであり、また必要に応して熱電
子放射材上の複数の直流電圧印加端の１以上において印
加＃ｉ電圧を独立に制御Ｂすることもできる。また本発
明は、含炭素化合物と水素との混合ガスを加熱された熱
電子放射材により熱分解し、該熱電子放射材に対して正
又は負の直流電圧を印加した基体上に導きダイヤモンド
を合成する装置において、核熱電子放射材に複数の直流
電圧印加端を設けたことを特徴きするダイヤモンドの気
相合成装置である。That is, in the present invention, a mixed gas of a carbon-containing compound and hydrogen is thermally decomposed by a heated thermionic material, and the mixture is guided onto a substrate to which a positive or negative DC voltage is applied to the nuclear thermionic material, and diamond is produced. A method for vapor phase synthesis of diamond, characterized in that the thermionic emitter is provided with a plurality of DC voltage application ends, and a DC voltage is applied to each end,
It is desirable that the voltages at the plurality of DC voltage application terminals on the thermionic radiation material are all the same, and if necessary, the voltage #i is applied at one or more of the plurality of DC voltage application terminals on the thermionic radiation material. It is also possible to independently control the voltage B. In addition, the present invention thermally decomposes a mixed gas of a carbon-containing compound and hydrogen using a heated thermionic emitting material, and introduces the diamond onto a substrate to which a positive or negative DC voltage is applied to the thermionic emitting material. This is a diamond vapor phase synthesis apparatus characterized by providing a plurality of DC voltage application ends to a nuclear thermionic material.
く作用〉
本発明者らは、成膜面積を大とするべく熱電子放射材の
広がり面積を大としたところ、たとえ基板が全て同電位
であるとしても、熱電子放射材の基板に対する電位の分
布が不均一となり、その為、熱電子放射材から基板に到
達する電子の分布も不均一となり、基板全面に亘って所
望の膜質や膜厚を得る事が出来ないことを知見した。Effect> The present inventors increased the spread area of the thermionic emitter in order to increase the film formation area, and even if the substrates were all at the same potential, the potential of the thermionic emitter with respect to the substrate decreased. It has been found that the distribution becomes non-uniform, and therefore the distribution of electrons reaching the substrate from the thermionic emission material also becomes non-uniform, making it impossible to obtain the desired film quality and thickness over the entire surface of the substrate.
そこで、上述の本発明のように、熱電子放射材上に２以
上の直流電圧印加端を設けることで、熱電子放射材の基
板に対する電位分布を、より均一に制御することができ
るようになり、その結果、基板全面に亘って所望の膜質
や膜厚を得ることができるようになった。Therefore, as in the present invention described above, by providing two or more DC voltage application ends on the thermionic emission material, it becomes possible to control the potential distribution of the thermionic emission material with respect to the substrate more uniformly. As a result, it has become possible to obtain desired film quality and film thickness over the entire surface of the substrate.
なおここで、熱電子放射材を通電加熱している場合には
、通電端の内の１以上又は全てを前記直流電圧印加端と
して流用することも出来るが、その場合には該通電端も
直流電圧印加端として数える。Here, if the thermionic radiation material is heated by electricity, one or more or all of the current-carrying ends can be used as the DC voltage application terminal, but in that case, the current-carrying end also applies DC voltage. Counted as voltage application end.
さて、一般には熱電子放射材上の複数箇所の直流印加電
圧を全て同一とすることで、基板に対する熱電子放射材
の電位分布の均一化を図ることが望ましい、しかしなが
ら直流印加電圧を全て同一とした場合であっても、熱電
子放射材の温度や材質等の不均一性や電極取り付は位置
の影響等の為、基板に対する熱電子放射材の電位分布の
均一化が必ずしも充分に達成出来ない事がある。この場
合には、熱電子放射材上の複数箇所の直流印加電圧の内
１以上を独立に制御すればよい、つまり、複数箇所の直
流印加電圧を互いに変えればよい。Generally speaking, it is desirable to equalize the potential distribution of the thermionic emitter to the substrate by applying the same DC voltage to all the points on the thermionic emitter. Even in this case, it is not always possible to achieve a sufficiently uniform potential distribution of the thermionic emitter with respect to the substrate due to non-uniformity of the temperature and material of the thermionic emitter, and the influence of the electrode mounting position. There are things that aren't there. In this case, one or more of the DC applied voltages at multiple locations on the thermionic radiation material may be independently controlled, that is, the DC applied voltages at multiple locations may be mutually changed.
更に必要に応じて、各々の直流電圧を調節する事で、膜
厚や結晶性の分布の積極的な制御も可能である。Furthermore, by adjusting each DC voltage as necessary, it is also possible to actively control the film thickness and crystallinity distribution.
なお、熱電子放射材上の複数箇所の直流印加電圧を互い
に変えた場合には、印加電圧の差や熱電子放射材の抵抗
（直に応じた電流が熱電子放射材に流れ、熱電子放射材
はジュール加熱されることになるが、この加熱により熱
電子放射材の温度分布の均一性を増す事も可能である。Note that when the DC applied voltages at multiple points on the thermionic emitting material are changed, a current corresponding to the difference in applied voltage and the resistance of the thermionic material flows through the thermionic material, causing the thermionic emission to increase. The material will be Joule heated, and this heating can also increase the uniformity of the temperature distribution of the thermionic emitting material.
以下本発明の具体的構成の例を揚げ、その作用について
更に詳細に説・明する。Hereinafter, examples of specific configurations of the present invention will be given, and the effects thereof will be explained in further detail.
第１図は、本発明に掛かるダイヤモンドの気相合成装置
の断面略図である。真空容器７には図示しないガス供給
装置から細孔を複数開けたガスノズル２を通して原料ガ
スが供給され、また排気口９を通じ図示しない排気装置
に接続され合成に必要な雰囲気圧力を維持する。圧力は
真空計１により監視する。真空容器内雰囲気は発熱体８
により加熱され、図示しない温度制御装置により、蒸着
基Ｆｉ４の温度をダイヤモンド合成に適した温度に保持
する。基板と対向するようにフィラメント３が配置され
、その中央附近には直流電圧印加１を極６がある。直流
電源１４〜１６により、電極６七２つのフィラメント通
電端子に直流電圧を印加する。FIG. 1 is a schematic cross-sectional view of a diamond vapor phase synthesis apparatus according to the present invention. Raw material gas is supplied to the vacuum container 7 from a gas supply device (not shown) through a gas nozzle 2 having a plurality of pores, and is connected to an exhaust device (not shown) through an exhaust port 9 to maintain the atmospheric pressure necessary for synthesis. The pressure is monitored by a vacuum gauge 1. The atmosphere inside the vacuum container is a heating element 8.
The temperature of the vapor-deposited group Fi4 is maintained at a temperature suitable for diamond synthesis by a temperature control device (not shown). A filament 3 is arranged to face the substrate, and a pole 6 for applying a DC voltage 1 is located near the center of the filament 3. A DC voltage is applied to the two filament current-carrying terminals of the electrode 6 by DC power sources 14 to 16.
フィラメントは加熱用型１１１０により加熱されている
０本例ではフィラメント電源を交流電源としたが、むろ
ん直流でも構わない。The filament is heated by a heating mold 1110. In this example, the filament power source was an AC power source, but it may of course be a DC power source.
従来技術においては、直流電源１４（又は１５）のみし
か設置されていなかった。その為、フィラメント３の基
板に対する電位はフィラメントの位置によって大きく変
化し、基板４上に成長するダイヤモンドの成長速度や結
晶性は均一とはなり得なかった。直流を源１４と１５を
併用する事によりフィラメントの電位分布は均一化され
た。フィラメントの長さが大である場合には更にフィラ
メント上に電極６を設け、直流Ｔｔ源１６により直流電
圧を印加する事で、フィラメント３の基板に対する電位
の均一化を更にうながす事が出来た。In the prior art, only the DC power supply 14 (or 15) was installed. Therefore, the potential of the filament 3 with respect to the substrate varies greatly depending on the position of the filament, and the growth rate and crystallinity of diamond grown on the substrate 4 cannot be uniform. By using direct current sources 14 and 15 in combination, the potential distribution of the filament was made uniform. When the length of the filament is long, by further providing an electrode 6 on the filament and applying a DC voltage from a DC Tt source 16, it was possible to further promote uniformity of the potential of the filament 3 with respect to the substrate.
一般には熱電子放射材上の直流印加電圧は全て同一とす
るが、熱電子放射材の温度や材′Ｎ笠の不均一性、或い
は直流電圧印加電極の位置の影響等の為、ＩＮ板−に対
する熱電子放射材の電位分布の均一化が必ずしも充分に
達成出来ない事がある。この場合には、電源１４〜１５
の電圧を独立に制御し、均一化を達成する事が出来る。Generally, the DC applied voltage on the thermionic emitting material is the same, but due to the influence of the temperature of the thermionic emitting material, non-uniformity of the material's cap, or the position of the DC voltage application electrode, the IN plate - It may not always be possible to achieve a sufficient uniformity of the potential distribution of the thermionic emitting material. In this case, power supplies 14 to 15
It is possible to control the voltage independently and achieve uniformity.
また必要に応して、各りの直流電圧を調整する事で、膜
厚や結晶性の分布の積極的な制御が可能であることも判
明した。It has also been found that it is possible to actively control the film thickness and crystallinity distribution by adjusting each DC voltage as necessary.
第２図は、熱電子放射材としてメンシュ１１を用いた場
合の例で、直流電圧印加電極６はメツシュ上に複数個設
けである。直流電源の数もそれに応じて増した。なお、
印加端の数やその位置については、メツシュのサイズ等
により適宜最適値を決定する必要がある。その他の構成
１作用については、第１図の例と同一である。FIG. 2 shows an example in which a mensch 11 is used as the thermionic emission material, and a plurality of DC voltage applying electrodes 6 are provided on the mesh. The number of DC power supplies has also increased accordingly. In addition,
Regarding the number of application ends and their positions, it is necessary to determine the optimum value as appropriate depending on the size of the mesh, etc. The other effects of Structure 1 are the same as those in the example shown in FIG.
第３図は、反応容器１２に熱電子放射材を用いた場合の
例で、容器の温度は発熱体８によりダイヤモンド析出に
必要な温度に保ち、蒸着基板４は水冷器１３によって冷
却されてダイヤモンド析出に最適な温度に調整される。FIG. 3 shows an example in which a thermionic emissive material is used in the reaction vessel 12. The temperature of the vessel is maintained at a temperature necessary for diamond precipitation by a heating element 8, and the evaporation substrate 4 is cooled by a water cooler 13 to produce diamonds. The temperature is adjusted to the optimum temperature for precipitation.
原料ガスは反応容器の上部から導入され下部へと排出さ
れる。ガスの供給装置、排気系装置、真空計等の図示は
省略した。Raw material gas is introduced from the upper part of the reaction vessel and discharged to the lower part. Illustrations of a gas supply device, an exhaust system device, a vacuum gauge, etc. are omitted.
反応容器には複数の直流電圧印加端を設け、それぞれに
電源が接続されている。印加端の数やその位置について
は、蒸着装置のサイズ等により最適値が変るので特定で
きない。The reaction vessel is provided with a plurality of DC voltage application ends, each of which is connected to a power source. The number of application ends and their positions cannot be specified because the optimal values vary depending on the size of the vapor deposition apparatus and the like.
次に、これらの装置によりダイヤモンドを合成する条件
について説明する。Next, conditions for synthesizing diamond using these devices will be explained.
原料ガスとして用いる含炭素化合物は、本発明の方法で
熱分解するものであれば特に限定されない。具体的には
、メタン、エタン、プロパン、エチレン、アセチレン、
ベンゼン等の炭化水素、メチルアルコール エチルアル
コール アセトン−酸化炭素等の含酸素炭素化合物、四
塩化炭素。The carbon-containing compound used as the raw material gas is not particularly limited as long as it is thermally decomposed by the method of the present invention. Specifically, methane, ethane, propane, ethylene, acetylene,
Hydrocarbons such as benzene, methyl alcohol, ethyl alcohol, oxygenated carbon compounds such as acetone-carbon oxide, carbon tetrachloride.
塩化メチル等の含ハロゲン炭素化合物等である。These include halogen-containing carbon compounds such as methyl chloride.
これらの内でも、取扱の容易さ、熱分解の容易さ等から
、メタン、アセチレン、メチルアルコールエチルアルコ
ール等が好ましい。これらの原料ガスと水素とを混合す
る割合は特に限定されないが、炭素と水素のモル比でｏ
、ｏｏｉ〜０．２の範囲が好ましい、また、必要に応し
、上記含炭素化合物と水素の他に、他のガスを添加して
も良い。例えば、酸素、水、硼素化合物等である。これ
らのガスの混合比は、ガス種や混合の目的等により異な
るので特定する事は出来ない。Among these, methane, acetylene, methyl alcohol, ethyl alcohol, etc. are preferred from the viewpoint of ease of handling, ease of thermal decomposition, etc. The mixing ratio of these raw material gases and hydrogen is not particularly limited, but the molar ratio of carbon to hydrogen is
, ooi to 0.2 is preferred. If necessary, other gases may be added in addition to the above carbon-containing compound and hydrogen. For example, oxygen, water, boron compounds, etc. The mixing ratio of these gases cannot be specified because it varies depending on the type of gas and the purpose of mixing.
蒸着基体としては、モリブデン、タングステン等の金属
、シリコン等の半導体等であるが、要はダイヤモンド析
出温度で損傷せず、導通性のある材料なら良い。The deposition substrate may be a metal such as molybdenum or tungsten, or a semiconductor such as silicon, but any material that is conductive and not damaged at the diamond deposition temperature may be used.
基体温度は５００°Ｃ〜１］００’Ｃが好ましい。The substrate temperature is preferably 500°C to 1]00'C.
雰囲気圧力は０．１〜７６０Ｔｏｒｒの範囲で用いる事
が出来るが、好ましくは１０〜１００Ｔｏｒｒである。Although the atmospheric pressure can be used in the range of 0.1 to 760 Torr, it is preferably 10 to 100 Torr.
ガス流量は、装置のサイズ等により最適値が変わるので
特定できない。The gas flow rate cannot be specified because the optimum value changes depending on the size of the device.
熱電子放射材としては、水素雰囲気下でｌ３００°Ｃ以
上の温度に耐え得る物であればよく、タングステン、タ
ンタル等の金属や、炭化物等を用いることができる。The thermionic emitting material may be any material as long as it can withstand temperatures of 1300° C. or higher in a hydrogen atmosphere, and metals such as tungsten and tantalum, carbides, etc. can be used.
熱電子放射材の温度は１３００’Ｃ以上が良い。The temperature of the thermionic emitting material is preferably 1300'C or higher.
熱電子放射材の基体に対する印加電圧は、正又は負とす
る。熱電子放射材を負、基体を正とした場合には成長速
度や核発生数の増大を期待でき、その電圧は１０〜５０
（ｌ Ｖ程度とすることが望ましい。The voltage applied to the base of the thermionic emission material is positive or negative. If the thermionic emitting material is negative and the substrate is positive, an increase in the growth rate and the number of nuclei generated can be expected, and the voltage is 10 to 50.
(It is desirable to set it to about 1 V.
逆に、熱電子放射材を正、基体を負とした場合にはＭ質
向上が期待でき、その電圧は１〜５０Ｖ程度とすること
が望ましい。Conversely, if the thermionic emitting material is positive and the substrate is negative, an improvement in M quality can be expected, and the voltage is preferably about 1 to 50V.
〈実施例〉
実施例Ｉ
本発明第１図の方法を用いダイヤモンドの気相合成を行
った。基板は、粒径約２０μｍのダイヤモンド′砥粒で
研磨した１５ｔｍ Ｘ １５＋ｗ Ｘ ０．５ｍ＋＋の
シリコンである。フィラメントにはタングステンを用い
た。芸着面から１０鵬離した位置に幅長３０＋ｍにわた
ってタングステンフィラメントを、またさらには１０Ｗ
ｊＩＡ＃ｌれた位置がその先端となるように原料ガス供
給ノズルを設置した。フィラメントのほぼ中央に直流電
圧印加電極を設けた。蒸着時のフィラメント温度と基板
温度は光高温計で測定した。蒸着中、電気炉の通電電力
を調節することにより基板温度を一定に維持した。蒸着
条件は、メタン流量−５ｓｅｃｍ、水素流！＝５００ｓ
ｅｃｍ 、雰囲気圧力＝３０丁ｏｒｒ、フィラメント温
度−２１００’Ｃ（交流電ｉｆ！２５Ｖ５０サイクルで
加熱〕、基板温度８５０°Ｃとした。基板に対するフィ
ラメントバイアスは、３基の直流量＃（符番１４〜１６
）の全てを一１５０ｖとして印加した。<Examples> Example I Diamond was synthesized in a vapor phase using the method shown in FIG. 1 of the present invention. The substrate is 15tm x 15+w x 0.5m++ silicon polished with a diamond abrasive with a grain size of about 20 μm. Tungsten was used for the filament. A tungsten filament is placed over a width of 30+m at a distance of 10 meters from the surface of the costume, and a 10W
The raw material gas supply nozzle was installed so that the tip of the nozzle was located at the position where it was placed. A DC voltage application electrode was provided approximately at the center of the filament. The filament temperature and substrate temperature during vapor deposition were measured using an optical pyrometer. During the deposition, the substrate temperature was maintained constant by adjusting the power applied to the electric furnace. The evaporation conditions are methane flow rate -5 sec, hydrogen flow! =500s
ecm, atmospheric pressure = 30 orr, filament temperature -2100'C (heated with AC electricity if! 25V 50 cycles), and substrate temperature 850°C.The filament bias against the substrate was set at three DC flow rates # (numbers 14 to 14). 16
) were all applied at -150V.
この条件において５時間運転し、基板の全面に亘り、厚
さ約２０±０．４μ−のダイヤモンド膜が得られた。膜
を微小ラマン分光分析したところ、ダイヤモンドのピー
ク強度１６と非ダイヤモンド質炭素のピーク強度１ ｎ
ａとの比（１，、／Ｉ、）は００５±０．０２であった
。After operating under these conditions for 5 hours, a diamond film with a thickness of about 20±0.4 μm was obtained over the entire surface of the substrate. When the film was subjected to micro-Raman spectroscopy, the peak intensity of diamond was 16 and the peak intensity of non-diamond carbon was 1 n.
The ratio (1,, /I,) with a was 005±0.02.
比較例１
第１図の装置において、フィラメント−基板間に電圧を
印加せず、その他の条件は実施例Ｉと同様とした。５時
間運転したところ、厚さ約５±０゜８μ−のダイヤモン
ド膜が得られた。但し、基板全面に膜を得る事が出来ず
、一部成膜していない部分もあった。膜を微小ラマン分
光分析したところ、ダイヤモンドのピーク強度■４と非
ダイヤモンド質炭素のピーク強度１．との比（ｒｏ／ｌ
ａ）は０．０８±０．０６であった。Comparative Example 1 In the apparatus shown in FIG. 1, no voltage was applied between the filament and the substrate, and other conditions were the same as in Example I. After operating for 5 hours, a diamond film with a thickness of approximately 5±0°8μ was obtained. However, it was not possible to form a film on the entire surface of the substrate, and there were some areas where the film was not formed. When the film was subjected to micro-Raman spectroscopic analysis, the peak intensity of diamond was 4, and the peak intensity of non-diamond carbon was 1. ratio (ro/l
a) was 0.08±0.06.
比較例２
第１図の装置において、フィラメント−基板間に電源１
４のみを用いて基板に対するフィラメントの電極電位が
一１５０ｖとなるよう直流電圧を印加した。その他の条
件は実施例１と同様とした。５時間運転したおころ、基
板の全面に亘り、厚さ約１５±５μ−のダイヤモンド膜
が得られた。膜を微小ラマン分光分析したところ、ダイ
ヤモンドのピーク強度！、と非ダイヤモンド質炭素のピ
ーク強度！。との比（１，□／■４）は０．ｌＯ±０．
１０であった。Comparative Example 2 In the apparatus shown in Fig. 1, a power source 1 is connected between the filament and the substrate.
A DC voltage was applied using only No. 4 so that the electrode potential of the filament with respect to the substrate was 1150V. Other conditions were the same as in Example 1. After 5 hours of operation, a diamond film with a thickness of approximately 15±5 μm was obtained over the entire surface of the substrate. Micro Raman spectroscopy analysis of the film showed the peak intensity of diamond! , and the peak intensity of non-diamond-like carbon! . The ratio (1,□/■4) is 0. lO±0.
It was 10.
実施例２
第１図の装置において、フィラメント−基板間にａ ？
ｉ！Ｌｉｆ源１４〜１６により基板に対するフィラメン
トの電極電位が＋ＩＯＶとなるよう直流電圧を印加した
。その他の条件は実施例１と同様とした。５時間運転し
たところ、基板の全面に亘り、厚さ約約５±０．５ ｕ
ｗａのダイヤモンド膜が得られた。膜を微小ラマン分光
分析したところ、非ダイヤモンド質炭素が認められなか
った。Example 2 In the apparatus shown in FIG. 1, there is a space between the filament and the substrate.
i! A DC voltage was applied by the Lif sources 14 to 16 so that the electrode potential of the filament with respect to the substrate was +IOV. Other conditions were the same as in Example 1. After 5 hours of operation, the thickness was approximately 5±0.5 u over the entire surface of the board.
A wa diamond film was obtained. Micro Raman spectroscopy analysis of the film revealed no non-diamond carbon.
比較例３
第１図の装置において、フィラメント−基板間に電源１
４のみを用いて基板に対するフィラメントの電極電位が
＋１０■となるよう直流電圧を印加した。その他の条件
は実施例１と同様とした。５時１ｇｌ１！転したところ
、基板全面に亘り、厚さ約５±２μ爾のダイヤモンド膜
が得られた。膜を微小ラマン分光分析したところ、ダイ
ヤモンドのピーク強度！４と非ダイヤモンド質炭素のピ
ーク強度１日との比（Ｔ、、／Ｔ、）は０．０１ ＋
０．０１ Ｆあった。Comparative Example 3 In the device shown in Fig. 1, a power source 1 is connected between the filament and the substrate.
A DC voltage was applied using only No. 4 so that the electrode potential of the filament with respect to the substrate was +10. Other conditions were the same as in Example 1. 5 o'clock 1gl1! As a result, a diamond film having a thickness of approximately 5±2 μm was obtained over the entire surface of the substrate. Micro Raman spectroscopy analysis of the film showed the peak intensity of diamond! 4 and the peak intensity of non-diamond carbon in 1 day (T, , /T,) is 0.01 +
It was 0.01 F.
以上、実施例１と比較例１． ２の結果並びに実施例２
と比較例３の結果から、本発明により膜厚及び膜質の均
一化が達成できたことが示される。Above, Example 1 and Comparative Example 1. Results of 2 and Example 2
The results of Comparative Example 3 and Comparative Example 3 show that the present invention was able to achieve uniform film thickness and film quality.
実施例３
本発明第２図の方法を用いたダイヤモンドの気相合成を
行なった。基板は、粒径的２０μ−のダイヤモンド砥粒
で研磨した直径５０ｍｇｍ・厚さ０．５−のシリコン円
板である。メツシュには７５ｍＸ７５閣のタングステン
（目番３０）を用いた。ｙＭ着面からｌＯｗａｌｌした
位置にタングステンメツシュを、またさらにｌＯ■離れ
た位置に原料ガス分配器を設置した。Example 3 Diamond was synthesized in a vapor phase using the method shown in FIG. 2 of the present invention. The substrate is a silicon disk with a diameter of 50 mgm and a thickness of 0.5 mm polished with diamond abrasive grains of 20 μm in diameter. Tungsten (metal number 30) measuring 75m x 75mm was used for the mesh. A tungsten mesh was installed at a position lOwall away from the yM deposition surface, and a source gas distributor was installed at a position further lO■ away.
直流電圧印加電極は２５ｗ間隔で４箇所設けた。蒸着時
のメツシュ温度と基板温度は光高温計で測定した。蒸着
中、電気炉の通ｔｉｔ力を調整することにより基板温度
を一定に維持した。渾着条件は、メタン流量”２０ｓｅ
ｃｍ、水素流量＝２ｓ１ｍ、２膜気圧力＝３０Ｔｏｒｒ
、メツシュ温度＝２１００°Ｃ（交流ｉｔ源７０Ｖ、５
０サイクルで加熱）、基板温度８５０°Ｃとした。DC voltage application electrodes were provided at four locations at intervals of 25 W. The mesh temperature and substrate temperature during vapor deposition were measured using an optical pyrometer. During the deposition, the substrate temperature was maintained constant by adjusting the heating power of the electric furnace. The storage conditions are methane flow rate “20se”
cm, hydrogen flow rate = 2s1m, 2 membrane pressure = 30Torr
, mesh temperature = 2100°C (AC it source 70V, 5
0 cycles), and the substrate temperature was 850°C.
基板に対するフィラメントバイアスは、３基の直流電源
（符番１４〜１６）の全てを−１５０Ｖとして印加した
。A filament bias of -150V to the substrate was applied to all three DC power supplies (numbers 14 to 16).
この条件において５時間運転し、基板の全面に亘り、厚
さ約５０±２μ−のダイヤモンド膜が得られた６膜を微
小ラマン分光分析したところ、ダイヤモンドのピーク強
度１４と非ダイヤモンド質炭素のピーク強度１゜との比
（＋、、、／Ｉ、）は０．０５±０．０２であった。Micro Raman spectroscopy analysis of six diamond films obtained after 5 hours of operation under these conditions and having a thickness of approximately 50±2μ over the entire surface of the substrate revealed a peak intensity of 14 for diamond and a peak for non-diamond carbon. The ratio (+, , /I,) to the intensity of 1° was 0.05±0.02.
比較例４
第２図の装置において、メンソニー基板間Ｇこ電源１４
のみを用いて基板に対するフィラメントの電極電位が一
１５０ｖとなるよう直流電圧を印加した。Comparative Example 4 In the device shown in FIG.
A DC voltage was applied using a chisel so that the electrode potential of the filament with respect to the substrate was 1150V.
その他の条件は実施例３と同様とした。５時間運転した
ところ、基板の全面に亘り、厚さ約２５±ＩＯμｍのダ
イヤモンド膜が得られた。＃を微小ラマン分光分析した
ところ、ダイヤモンドのピーク強度１．と非ダイヤモン
ド質炭素のピーク強度］。。Other conditions were the same as in Example 3. After operating for 5 hours, a diamond film with a thickness of about 25±IO μm was obtained over the entire surface of the substrate. Micro Raman spectroscopy analysis of # revealed that the peak intensity of diamond was 1. and non-diamond carbon peak intensity]. .
との比（１□／１４）は０１５±０．１３であった。The ratio (1□/14) was 015±0.13.
以上、実施例３と比較例４の結果から、本発明によりｌ
ｌ！！！厚及び膜質の均一化が達成できたことが示され
る。また、成膜速度も向上している。As mentioned above, from the results of Example 3 and Comparative Example 4, it is clear that the present invention
l! ! ! It is shown that uniformity in thickness and film quality was achieved. Furthermore, the film formation speed has also improved.
実施例４
本発明第３図の方法を用いたダイヤモンドの気相合成を
行なった。基板は、粒径約２０ｕｔａダイヤモンド砥粒
で研磨した直径２ｆ）ｗ＋・厚さ０．５圓のシリコン円
板である。容器には直径４０閣のタングステンを用いた
。直２１ Ｎ圧印前電極は、基板上方２０−と５０＋ｍ
の位置の円周上に８箇所ずつ計１６箇所設けた。蒸着中
、水冷器の通水量を調整することにより基板温度を一定
に維持した。蒸着条件は、メタン流量−０，２ｓｅｃｍ
、水素流量−１００ｓｅｃｍ 、雰囲気圧力＝３０Ｔ
ｏｒｒ、容器温度＝１８００”Ｃ，基板温度８５０°Ｃ
とした。基板に対する容器のバイアスは、上側の８箇所
の電極電位を−１５０Ｖ、下側８箇所の電極電位を一１
００Ｖとして印加した。Example 4 Diamond was synthesized in a vapor phase using the method shown in FIG. 3 of the present invention. The substrate is a silicon disk with a diameter of 2 f)w+ and a thickness of 0.5 round polished with diamond abrasive grains of about 20 uta. Tungsten with a diameter of 40 cm was used for the container. Direct 21N pre-coining electrodes are located 20- and 50+m above the substrate.
A total of 16 locations were provided, 8 locations each on the circumference of the location. During the deposition, the substrate temperature was maintained constant by adjusting the amount of water flowing through the water cooler. The deposition conditions were: methane flow rate -0.2 sec
, hydrogen flow rate -100sec, atmospheric pressure = 30T
orr, container temperature = 1800"C, substrate temperature 850°C
And so. The bias of the container with respect to the substrate is -150V for the upper 8 electrodes and -11V for the lower 8 electrodes.
It was applied as 00V.
この条件において２０時間運転し、基板の全面に亘り、
厚さ約５±０．５μｍのダイヤモンド膜が得られた。膜
を微小ラマン分光分析したところ、ダイヤモンドのピー
ク強度Ｉ４と非ダイヤモンド質炭素のピーク強度Ｉ。と
の比（Ｉ□／１□）はｏ、ｏｉ±０．０１であった。After operating under these conditions for 20 hours, the entire surface of the board was
A diamond film with a thickness of approximately 5±0.5 μm was obtained. When the film was subjected to micro-Raman spectroscopy, the peak intensity of diamond was I4 and the peak intensity of non-diamond carbon was I. The ratio (I□/1□) was o, oi±0.01.
比較例５
第３図の装置において、容器にバイアスを印加せず、そ
の他の条件は実施例４と同様とした。２０時間運転した
ところ、基板の周囲のみに最大厚さ約５μｍのダイヤモ
ンド膜が得られた。膜を微小ラマン分光分析したところ
、ダイヤモンドのピーク強度Ｉ４と非ダイヤモンド質炭
素のピーク強度Ｉｎ４との比（Ｉｌｌ、／Ｉ、）は０．
０１±０．Ｏｌであった。Comparative Example 5 In the apparatus shown in FIG. 3, no bias was applied to the container, and other conditions were the same as in Example 4. After 20 hours of operation, a diamond film with a maximum thickness of about 5 μm was obtained only around the substrate. When the film was subjected to micro-Raman spectroscopy, the ratio (Ill, /I,) between the peak intensity I4 of diamond and the peak intensity In4 of non-diamond carbon was 0.
01±0. It was an office worker.
以上、実施例４と比較例５の結果から、本発明により膜
厚及び膜質の均一化が達成できたことが示される。The results of Example 4 and Comparative Example 5 above show that the present invention was able to achieve uniform film thickness and film quality.
〈発明の効果〉
本発明により、成膜面積が大である場合でも、得られた
ダイヤモンドの膜厚や結晶性は膜全体に亘る均一性が著
しく向上した。<Effects of the Invention> According to the present invention, even when the film formation area is large, the uniformity of the film thickness and crystallinity of the obtained diamond over the entire film is significantly improved.
第１〜３図は、夫々本発明の装！構成を示す概略図であ
る。
１・・・真空計、 ２・・・ガスノズル、３・
・・フィラメント、 ４・・・蒸着基板、５・・・導
電性基板支持台、
６・・・直流電圧印加電極、
７・・真空容器、
９・・排気口、
ＩＯ・・フィラメン
１１・・・メツシュ、
１３・・・水冷器、
８・・・発熱体、
ト加熱用電源、
１２・・・反応容器、
１４〜１９・・直流電源。
第 １ 図
第 ２ 図Figures 1 to 3 each show the equipment of the present invention! FIG. 2 is a schematic diagram showing the configuration. 1... Vacuum gauge, 2... Gas nozzle, 3...
... filament, 4... evaporation substrate, 5... conductive substrate support, 6... DC voltage application electrode, 7... vacuum container, 9... exhaust port, IO... filament 11... mesh, 13...water cooler, 8...heating element, power supply for heating, 12...reaction container, 14-19...DC power supply. Figure 1 Figure 2
Claims (4)
子放射材により熱分解し、該熱電子放射材に対して正又
は負の直流電圧を印加した墓体上に導きダイヤモンドを
合成する方法において、該熱電子放射材に複数の直流電
圧印加端を設け、夫々に直流電圧を印加することを特徴
とするダイヤモンドの気相合成方法。1. In a method for synthesizing diamonds, a mixed gas of a carbon-containing compound and hydrogen is thermally decomposed by a heated thermionic emitting material, and the mixture is guided over a grave body to which a positive or negative DC voltage is applied to the thermionic emitting material. A method for vapor phase synthesis of diamond, characterized in that the thermionic emitting material is provided with a plurality of DC voltage application ends, and a DC voltage is applied to each.
て同一にすることを特徴とする請求項１記載のダイヤモ
ンドの気相合成方法。2. 2. The method for vapor phase synthesis of diamond according to claim 1, wherein the voltages at a plurality of DC voltage application ends on the thermionic emitting material are all made the same.
おいて印加端電圧を独立に制御することを特徴とする請
求項１記載のダイヤモンドの気相合成方法。3. 2. The method for vapor phase synthesis of diamond according to claim 1, wherein the voltage at one or more of the plurality of DC voltage application ends on the thermionic emitter is independently controlled.
子放射材により熱分解し、該熱電子放射材に対して正又
は負の直流電圧を印加した基体上に導きダイヤモンドを
合成する装置において、該熱電子放射材に複数の直流電
圧印加端を設けたことを特徴とするダイヤモンドの気相
合成装置。4. In an apparatus for synthesizing diamond, a mixed gas of a carbon-containing compound and hydrogen is thermally decomposed by a heated thermionic emitter, and the mixture is guided onto a substrate to which a positive or negative DC voltage is applied to the thermionic emitter, A diamond vapor phase synthesis apparatus characterized in that the thermionic emitting material is provided with a plurality of DC voltage application ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11775290A JPH0416593A (en) | 1990-05-09 | 1990-05-09 | Method and device for vapor synthesis of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11775290A JPH0416593A (en) | 1990-05-09 | 1990-05-09 | Method and device for vapor synthesis of diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0416593A true JPH0416593A (en) | 1992-01-21 |
Family
ID=14719445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11775290A Pending JPH0416593A (en) | 1990-05-09 | 1990-05-09 | Method and device for vapor synthesis of diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0416593A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7112353B2 (en) | 2002-06-21 | 2006-09-26 | Canon Kabushiki Kaisha | Film deposition apparatus and film deposition method |
-
1990
- 1990-05-09 JP JP11775290A patent/JPH0416593A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7112353B2 (en) | 2002-06-21 | 2006-09-26 | Canon Kabushiki Kaisha | Film deposition apparatus and film deposition method |
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