JPH04165333A - Electro-optical device - Google Patents
Electro-optical deviceInfo
- Publication number
- JPH04165333A JPH04165333A JP2121012A JP12101290A JPH04165333A JP H04165333 A JPH04165333 A JP H04165333A JP 2121012 A JP2121012 A JP 2121012A JP 12101290 A JP12101290 A JP 12101290A JP H04165333 A JPH04165333 A JP H04165333A
- Authority
- JP
- Japan
- Prior art keywords
- nonlinear resistance
- electrode
- resistance elements
- electro
- optical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000000382 optic material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101100027969 Caenorhabditis elegans old-1 gene Proteins 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は駆動用電極にそって並んだ各画素毎に画素電
極と非線形抵抗素子を有する電気光学装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electro-optical device having a pixel electrode and a nonlinear resistance element for each pixel arranged along a driving electrode.
［発明の概要］
この発明は各画素電極と各画素電極毎に２ｎ個（ｎ：２
．３．４、…）設けられた非線形抵抗素子とを各画素電
極を間にはさむようにして各画素電極に隣接する２本の
駆動用電極と接続することにより、非線形抵抗素子のど
れかが破壊した場合には残りの非線形抵抗素子のいくつ
かを短絡または切断することで、画素欠陥の救済ができ
るような電気光学装置を提供するものである。[Summary of the Invention] This invention provides each pixel electrode with 2n (n: 2
．． 3.4,...) By connecting the provided nonlinear resistance element to two drive electrodes adjacent to each pixel electrode with each pixel electrode in between, one of the nonlinear resistance elements is destroyed. The present invention provides an electro-optical device in which a pixel defect can be relieved by short-circuiting or cutting off some of the remaining nonlinear resistance elements.
［従来の技術］
薄型、軽量、低消費電力のデイスプレィパネルとして、
液晶表示パネルは優れた特性を有しており、現在ラップ
トツブやブック型のパソコン等をはじめ多く用いられて
いる。その中でアクティブマトリックス方式によるデイ
スプレィパネルは、表示情報量の増大化と高画質化が可
能な方法として注目を浴びている。アクティブ素子とし
ては、薄膜トランジスタ等を用いた三端子素子、ＭＩＭ
等の非線形抵抗素子やＰＮ接合薄膜ダイオード等に代表
される二端子素子がある。[Conventional technology] As a thin, lightweight, and low power consumption display panel,
Liquid crystal display panels have excellent characteristics and are currently used in many devices, including laptops and book-type personal computers. Among these, active matrix display panels are attracting attention as a method that can increase the amount of displayed information and improve image quality. As active elements, three-terminal elements using thin film transistors, MIM, etc.
There are two-terminal elements represented by nonlinear resistance elements such as , and PN junction thin film diodes.
この中で、三端子素子は形成膜数が多いため工程は複雑
であり１歩留まりは悪く、コスト高になる欠点がある。Among these, the three-terminal element has the disadvantage that the process is complicated because of the large number of formed films, the yield per unit is low, and the cost is high.
また、ダイオードの場合は、耐圧が低く、静電気に対し
て弱いなどの問題がある。In addition, diodes have problems such as low breakdown voltage and vulnerability to static electricity.
これに対し、非線形抵抗素子は構造が単純で、耐圧も高
くできるので、低コストで大面積表示パネルへの応用に
有利である。On the other hand, nonlinear resistance elements have a simple structure and can have high breakdown voltages, so they are advantageous for application to large-area display panels at low cost.
第２図（ａ）は非線形抵抗素子を用いた従来の電気光学
装置のＸ−Ｙマトリックスパネル回路図であり、第２図
（ｂ）は装置の構造を示す一部断面図であり、第２図（
ｃ）は非線形抵抗素子の構造を示す平面図である６行電
極（駆動用電極）２１と列電極（対向電極）２２は基板
Ｂ及び対向基板Ａにそれぞれ通常１００から１０００本
程形成される。Ｘ−Ｙ交差部には画素電極２６を有し、
各画素電極２６毎に非線形抵抗層２５ａ、２５ｂを介し
それぞれ異なる２本の駆動用電極２１ａ、２１ｂと各画
素電極２６を接続する非線形抵抗素子２４ａ、２４ｂが
設けられている。基板Ａ、 Ｂ間には電気光学材料２３
が保持されている１通常の液晶表示パネルでは、基板Ａ
、Ｂにはガラス、対向電極２２と画素電極２６にはＩＴ
Ｏ１駆動用電極２１にはＣｒやＡ１等の金属、非線形抵
抗層２５ａ、２５ｂにはＳｉリッチな窒化シリコン膜等
が用いられる。FIG. 2(a) is an X-Y matrix panel circuit diagram of a conventional electro-optical device using a nonlinear resistance element, and FIG. 2(b) is a partial cross-sectional view showing the structure of the device. figure(
c) is a plan view showing the structure of a nonlinear resistance element. Normally, about 100 to 1000 six row electrodes (driving electrodes) 21 and column electrodes (counter electrodes) 22 are formed on the substrate B and the counter substrate A, respectively. A pixel electrode 26 is provided at the X-Y intersection,
Nonlinear resistance elements 24a and 24b are provided for each pixel electrode 26 to connect each pixel electrode 26 to two different driving electrodes 21a and 21b via nonlinear resistance layers 25a and 25b. An electro-optic material 23 is placed between substrates A and B.
1 In a normal liquid crystal display panel, the substrate A
, B is made of glass, and the counter electrode 22 and pixel electrode 26 are made of IT.
A metal such as Cr or A1 is used for the O1 drive electrode 21, and a Si-rich silicon nitride film or the like is used for the nonlinear resistance layers 25a and 25b.
この種のデイスプレィパネルの駆動は次のように行う、
即ち、第２図の多数の駆動用電極２１ａ、２１ｂを１対
ずつ上の方から線順次に選択し、その選択期間内に対向
電極によってデータを充電する。第２図は、電気光学装
置の駆動波形を示したものであり、第２図（ａ）は第１
の駆動用電極２１ａへ加わる走査信号、第２図（ｂ）は
第２の駆動用電極２１ｂへ加わる走査信号、第２図（Ｃ
）、（ｄ）は対向電極２２へ加わるデータ信号の波形を
示している。第２図（ａ）において、第１の駆動用電極
２１ａの電位は非選択期間においては■。＋ｖ１に保た
れ、選択期間に、■。＋Ｖ、、、に立ち上がる。第２図
（ｂ）では、第２の駆動用電極２１ｂは非選択期間にＶ
。−Ｖゎの電位、選択期間に■。−■。、゛の電位とな
る。従って、１対の非線形抵抗素子２４ａ、２４ｂの両
端（第２図（ａ）に示す（イ）、（ロ）間）に加わる電
圧は非選択期間にはＶ、＋Ｖ、、ｉｌｌ択期間にはｖ
、、＋ ｖ 、、、′ となり、Ｖ −＋ Ｖ ｂを充
分小さく、ｖ 、、＋ ｖ 、、’ を充分大きくとっ
てやれば、非線形抵抗素子２４ａ、２４ｂがスイッチと
して働くようになる。また、Ｖｏは選択期間における画
素電極２６の電位を示していて、Ｖ 、ｐ／ Ｖ 、、
′ 、Ｖ、／Ｖゎの比率が等しければ、非選択期間にお
いても画素電極２６の電位はＶｏを中心に動くことにな
る０表示するデータは、画素電極２６と対 ゛内電
極２２の電位差で決まるので、対向電極２２の電位を、
■。を基準にして、データに対応する分だけ変えてやれ
ば、任意の表示が可能となり、グレースケール等の比較
的容易に出せる。第２図（Ｃ）は、−列の画素の全てが
ＯＮとなるときに対向電極２２へ加わるデータ信号の波
形を示したもので、第２図（ｄ）は、−列の画素のうち
一個だけがＯＮで、残りの全てがＯＦＦとなるときに対
向電極２２へ加わるデータ信号の波形を示したものであ
る。このような駆動方法においては、データ信号は非線
形抵抗素子２４ａ、２４ｂの特性と独立しているため、
素子特性にパネル面内で多少のばらつきがあったとして
も、Ｖ ｏｐ＋ Ｖ 、ｐ’ を充分大きくとっておけ
ば、表示特性の問題なく駆動できる。Driving this type of display panel is as follows.
That is, a large number of drive electrodes 21a and 21b shown in FIG. 2 are selected one pair at a time from the top, and data is charged by the opposing electrodes within the selection period. Fig. 2 shows the driving waveform of the electro-optical device, and Fig. 2(a) shows the driving waveform of the electro-optical device.
The scanning signal applied to the second driving electrode 21a, FIG. 2(b) is the scanning signal applied to the second driving electrode 21b, FIG.
) and (d) show the waveforms of data signals applied to the counter electrode 22. In FIG. 2(a), the potential of the first driving electrode 21a is ■ during the non-selection period. +v1 is maintained during the selection period,■. +V... stand up. In FIG. 2(b), the second driving electrode 21b is connected to the voltage V during the non-selection period.
. -Vゎ potential, ■ during the selection period. −■. , ゛ potential. Therefore, the voltage applied across the pair of nonlinear resistance elements 24a and 24b (between (a) and (b) shown in FIG. 2(a)) is V during the non-selection period, +V during the ill selection period, and +V during the ill selection period. v
, , + v , , ′, and if V −+ V b is made sufficiently small and v , , + v , , ′ are made sufficiently large, the nonlinear resistance elements 24a and 24b will work as switches. Further, Vo indicates the potential of the pixel electrode 26 during the selection period, and V, p/V,...
If the ratios of ', V, and /V' are equal, the potential of the pixel electrode 26 will move around Vo even during the non-selection period.0 The data to be displayed is the potential difference between the pixel electrode 26 and the inner electrode 22. Therefore, the potential of the counter electrode 22 is
■. By using this as a reference and changing the amount corresponding to the data, any desired display becomes possible, and it is relatively easy to display gray scale or the like. Figure 2(C) shows the waveform of the data signal applied to the counter electrode 22 when all the pixels in the - column are turned on, and Figure 2(d) shows the waveform of the data signal applied to the counter electrode 22 when all the pixels in the - column are turned on. This figure shows the waveform of the data signal applied to the counter electrode 22 when only one of the two electrodes is turned on and all the others are turned off. In such a driving method, since the data signal is independent of the characteristics of the nonlinear resistance elements 24a and 24b,
Even if there is some variation in element characteristics within the panel plane, if V op+V and p' are set sufficiently large, driving can be achieved without problems in display characteristics.
［発明が解決しようとする課題］
このように各画素毎にそれぞれ画素電極と各画素電極に
隣接する２本の駆動用電極とを接続する複数個の非線形
抵抗素子が設けられていたデイスプレィパネルでは、表
示の大容量化と高画質化が可能となるが、一つのパネル
内に大量の非線形抵抗素子をつくりこむため、全ての非
線形抵抗素子が正常に動作するように作製することは極
めて困難であり、従って、画素欠陥が発生しやすく、歩
留まりを悪くする原因になっていた。[Problems to be Solved by the Invention] A display panel in which a plurality of nonlinear resistance elements are provided for each pixel, each connecting a pixel electrode and two driving electrodes adjacent to each pixel electrode. This makes it possible to increase display capacity and improve image quality, but since a large number of nonlinear resistance elements are built into one panel, it is extremely difficult to manufacture them so that all nonlinear resistance elements operate normally. Therefore, pixel defects are likely to occur, resulting in poor yield.
そこで本発明は、非線形抵抗素子の欠陥が発生しても、
画素欠陥とならないようにすることが可能な電気光学装
置を提供することを目的としている。Therefore, the present invention provides that even if a defect occurs in a nonlinear resistance element,
It is an object of the present invention to provide an electro-optical device that can prevent pixel defects.
１課題を解決するための手段］
本発明は上記問題点を解決するために、各画素電極毎に
非線形抵抗素子を２ｎ個（ｎ＝２．３゜４、…）設け、
それぞれｍ（２≦ｍ≦２ｎ−２）個と２ｎ−ｍ個の非線
形抵抗素子を介して各画素電極に隣接する２本の駆動用
電極と接続し、一方の側の非線形抵抗素子のどれかがシ
ョート欠陥となった場合には他方の側の対応する非線形
抵抗素子を対応する数だけ短絡させ、一方の側の非線形
抵抗素子のどれかがオープン欠陥となった場合には他方
の側の対応する非線形抵抗素子を対応する数だけ切断す
ることにより、双方の非線形抵抗素子群の特性のバラン
スを保ち、画素欠陥とならないようにしたものである。Means for Solving 1 Problem] In order to solve the above problems, the present invention provides 2n nonlinear resistance elements (n=2.3°4,...) for each pixel electrode,
Each pixel electrode is connected to two driving electrodes adjacent to each pixel electrode via m (2≦m≦2n-2) nonlinear resistance elements and 2n-m nonlinear resistance elements, and one of the nonlinear resistance elements on one side If any of the nonlinear resistance elements on one side becomes an open defect, the corresponding number of nonlinear resistance elements on the other side are shorted, and if any of the nonlinear resistance elements on one side becomes an open defect, the corresponding nonlinear resistance elements on the other side are shorted. By cutting the corresponding number of nonlinear resistance elements, the characteristics of both groups of nonlinear resistance elements are kept balanced and pixel defects are prevented.
【実施例Ｊ
以下に本発明の実施例を図面に基づいて説明する６第１
図（ａ）は本発明の詳細な説明する電気光学装置のｘ−
Ｙマトリックスパネル回路図であり、第１図（ｂ）は本
発明の電気光学装置の非線形抵抗素子の構造を示す平面
図である。第１図において、基板上には複数個の画素電
極１６と駆動用電極１１ａ、ｌｌｂが形成されている０
画素電極１６の４つのコーナ一部には非線形抵抗層１５
ａ、１５ｂ、１５ｃ、１５ｄと接続用電極１７ａ、１７
ｂ、１７Ｃ１１７ｄが形成され、画素電極１６と駆動用
電極１１ａ、ｌｌｂとを２個直列の非線形抵抗素子群１
４ａ−１４ｂ、１４ｃｍ１４ｄ、１４ｅ−１４ｆ、１４
ｇ−１４ｈを構成しながら接続している。対向電極１２
と画素電極１６間には電気光学材料１３が保持されてい
る０通常の液晶表示パネルでは、対向電極１２と画素電
極１６にはＩＴＯ１接続用電極１７ａ、１７ｂ、１７ｃ
、１７ｄにはＣｒやＡ１等の金属、非線形抵抗層１５ａ
、１５ｂ、１５ｃ、１５ｄにはＳｉリッチな窒化シリコ
ン膜等、駆動用電極１１ａ、１２ｂにはＣｒやＡＩ又は
ＩＴＯ等が用いられている。[Example J] Hereinafter, an example of the present invention will be explained based on the drawings.
Figure (a) shows an electro-optical device x-
FIG. 1(b) is a Y matrix panel circuit diagram, and FIG. 1(b) is a plan view showing the structure of the nonlinear resistance element of the electro-optical device of the present invention. In FIG. 1, a plurality of pixel electrodes 16 and drive electrodes 11a and llb are formed on the substrate.
A nonlinear resistance layer 15 is provided at some of the four corners of the pixel electrode 16.
a, 15b, 15c, 15d and connection electrodes 17a, 17
b, 17C117d are formed, and the pixel electrode 16 and the driving electrodes 11a and llb are connected in series to form a nonlinear resistance element group 1.
4a-14b, 14cm14d, 14e-14f, 14
It is connected while configuring g-14h. Counter electrode 12
In a normal liquid crystal display panel, an electro-optic material 13 is held between the counter electrode 12 and the pixel electrode 16, ITO1 connection electrodes 17a, 17b, 17c
, 17d is a nonlinear resistance layer 15a made of metal such as Cr or A1.
, 15b, 15c, and 15d are made of Si-rich silicon nitride film, and the driving electrodes 11a and 12b are made of Cr, AI, ITO, or the like.
ここで、例えば非線形抵抗素子１４ａがショートしてい
る場合に、それが画素欠陥に結びつかないようにするこ
とを考える。まず、通常の駆動方法において画素電極１
６の電位が全ての非線形抵抗素子が正常な場合の電位と
変わらないようにしなければならないが、それには画素
電極１６と駆動用電極１１ａを接続する非線形抵抗素子
群１４ａ、１４ｂ、１４ｃ、１４ｄと画素電極１６と駆
動用電極１１ｂを接続する非線形抵抗素子群１４ｅ、１
４ｆ、１４ｇ、１４ｈとが対称な特性になればよいから
、非線形抵抗素子１４ｅ、１４ｆ、１４ｇ、１４ｈのど
れか１つをショートさせればよい０次に、非線形抵抗素
子群のスイッチング特性であるが、充電特性については
非線形抵抗素子の直列個数が２から１へ減るため、むし
ろ良くなる方向である。保持特性については、第２図に
示すＶ、＋Ｖゎを充分小さくとっておけば問題はない、
従って、正常な画素と変わらない挙動を示すようになる
。また、非線形抵抗素子１４ａがオープンとなった場合
には、非線形抵抗素子１４ｅ、１４ｆ、１４ｇ、１４ｈ
のどれか１つをオーブンにすることにより同様の効果が
得られる。ただし、この場合は非線形抵抗素子の並列個
数が２から１へ減るため、充電特性が悪くならないよう
にｖ 、、＋ ｖ 、、’ を充分大きくとっておくこ
とが重要である。Here, for example, when the nonlinear resistance element 14a is short-circuited, we will consider how to prevent this from leading to pixel defects. First, in the normal driving method, the pixel electrode 1
It is necessary to ensure that the potential of the nonlinear resistance elements 6 is the same as the potential when all nonlinear resistance elements are normal. Nonlinear resistance element group 14e, 1 connecting pixel electrode 16 and drive electrode 11b
4f, 14g, and 14h should have symmetrical characteristics, so any one of the nonlinear resistance elements 14e, 14f, 14g, and 14h should be shorted. This is the switching characteristic of the zero-order nonlinear resistance element group. However, since the number of nonlinear resistance elements connected in series is reduced from 2 to 1, the charging characteristics are actually improving. Regarding the retention characteristics, there is no problem as long as V and +V shown in Figure 2 are kept sufficiently small.
Therefore, the pixel behaves the same as a normal pixel. In addition, when the nonlinear resistance element 14a becomes open, the nonlinear resistance elements 14e, 14f, 14g, 14h
A similar effect can be obtained by turning one of them into an oven. However, in this case, since the number of parallel nonlinear resistance elements is reduced from 2 to 1, it is important to set v , , + v , , , sufficiently large so as not to deteriorate the charging characteristics.
第４図（ａ）は本発明の第２の実施例を説明する電気光
学装置のＸ−Ｙマトリックスパネル回路図であり、第４
図（ｂ）は本発明の第２の実施例の非線形抵抗素子の構
造を示す平面図である。ここでは画素電極４６の２つの
コーナ一部に非線形抵抗層４５ａ、４５ｂと接続用電極
４７ａ、４７ｂを形成し１画素電極４６と駆動用電極４
１ａ、４１ｂとを２個並列の非線形抵抗素子群４４ａ−
４４ｃ、４４ｂ−４４ｄ、４４ｅ−４４ｇ、４４ｆ−４
４ｈを介して直列に接続している。この場合も、一方の
非線形抵抗素子群のどれか１つがショートやオーブンに
なったら、他方の非線形抵抗素子群のどれか１つをショ
ートやオーブンにすることによって１画素欠陥となるこ
とを防ぐことができる。FIG. 4(a) is an X-Y matrix panel circuit diagram of an electro-optical device explaining a second embodiment of the present invention.
Figure (b) is a plan view showing the structure of a nonlinear resistance element according to a second embodiment of the present invention. Here, nonlinear resistance layers 45a and 45b and connection electrodes 47a and 47b are formed at two corners of the pixel electrode 46, and one pixel electrode 46 and the drive electrode 4 are formed.
1a and 41b in parallel with two nonlinear resistance elements 44a-
44c, 44b-44d, 44e-44g, 44f-4
They are connected in series via 4h. In this case as well, if any one of the nonlinear resistance element groups on one side becomes short-circuited or opened, one pixel defect can be prevented by short-circuiting or opening one of the nonlinear resistance element groups on the other side. I can do it.
以上の例はいずれも非線形抵抗素子の直列、並列の個数
が片側それぞれ２個ずつであったが、これ以外の非線形
抵抗素子の接続方法でも欠陥救済は可能であることは言
うまでもなく、直列接続のみ、並列接続のみでも欠陥救
済に有効である。In all of the above examples, the number of nonlinear resistance elements in series and parallel was two on each side, but it goes without saying that defects can be repaired using other methods of connecting nonlinear resistance elements. , parallel connection alone is effective for defect relief.
以上説明したように、本発明によれば各画素電極と各画
素電極毎に２ｎ個（ｎ＝２．３．４、…）設けられた非
線形抵抗素子とを各画素電極を間にはさむようにして各
画素電極に隣接する２本の駆動用電極と接続し、一方の
側に非線形抵抗素子のどれかが破壊した場合には他方の
側の対応する非線形抵抗素子を対応する数だけ短絡また
は切断することにより、双方の非線形抵抗素子群の特性
のバランスを保ち、全ての非線形抵抗素子が正常なとき
と変わらずにデータの充電と保持ができるようにするこ
とが可能である。従って、非線形抵抗素子の欠陥が発生
しても画素欠陥とならないようにすることができる。As explained above, according to the present invention, each pixel electrode and 2n nonlinear resistance elements (n=2.3.4,...) provided for each pixel electrode are sandwiched between each pixel electrode. Each pixel electrode is connected to two adjacent drive electrodes, and if any of the nonlinear resistance elements on one side breaks, the corresponding number of nonlinear resistance elements on the other side are short-circuited or disconnected. By doing so, it is possible to maintain a balance in the characteristics of both groups of nonlinear resistance elements, and to enable data to be charged and held in the same manner as when all nonlinear resistance elements are normal. Therefore, even if a defect occurs in the nonlinear resistance element, it can be prevented from becoming a pixel defect.
第１図（ａ）は本発明の第１の実施例を説明する電気光
学装置のＸ−Ｙマトリックスパネル回路図、第１図（ｂ
）は本発明の第１の実施例を説明する非線形抵抗素子の
構造を示す平面図。
第２図（ａ）は非線形抵抗素子を用いた従来の電気光学
装置のＸ−Ｙマトリックスパネル回路図、第２図（ｂ）
は非線形抵抗素子を用いた従来の電気光学装置の構造を
示す断面図、第２図（Ｃ）は従来の電気光学装置の非線
形抵抗素子の構造を示す平面図。
第２図（ａ）は第１の駆動用電極へ加わる走査信号の波
形を示す図、第２図（ｂ）は第２の駆動用電極へ加わる
走査信号の波形を示す図、第２図（Ｃ）は、−列の画素
の全てがＯＮとなるときに対向電極へ加わるデータ信号
の波形を示す図、第２図（ｄ）は、−列の画素のうち一
個だけがＯＮで、残りの全てがＯＦＦとなるときに対向
電極へ加わるデータ信号の波形を示す図。
第４図（ａ）は本発明の第２の実施例を説明する電気光
学装置のＸ−γマトリックスパネル回路図、第４図（ｂ
）は本発明の第２の実施例を説明する非線形抵抗素子の
構造を示す平面図である。
Ａ………・・対向基板
Ｂ………・・基板
１１ 、 ｌｌａ、 ｌｌｂ、 ２１． ２１ａ、２１
ｂ、 ４１． ４１ａ 、 ４１ｂ………・・行電極（
駆動用電
極）
１２．２２．４２…・・列電極（対向電極）
１３．２３．４３…・・電気光学材料（液晶）
１４ａ、１４ｂ、１４ｃ、１４ｅ、１４ｆ、１４ｇ、１
４ｈ、２４ａ、２４ｂ、４４ａ、４４ｂ、４４ｃ、４４
ｄ、４４ｅ、４４ｆ１４４ｇ、４４ｈ……非線形抵抗素
子１５ａ、１５ｂ、１５ｃ、１５ｄ、２５ａ、
２５ｂ、４５ａ、４５ｂ−・非線形抵抗層１６．２６．
４６…・・画素電極
１７ａ、１７ｂ、１７ｃ、１７ｄ、４７ａ、４７ｂ……
…・接続用電極
水金８目の電気光３昔１のＸ−Ｙ７１“Ｊ・ン７又ベフ
ル回路図第１図（ａ’）
／Ｆ売明の牡線形相杭累ｊの講遣乞示オ平面図第１図（
ｂ）
第２図（ａ）
一一一 −とし２３
第２図（ｂ）
第２図
未発ｅ月の第２の冥託廿°：θホ１Ｘ−ＹマＶＩ＝、７
スバフル回路図第４図（ａ）
本発明の第２の実記ｔ１の社線形４６杭索子の構造と示
す平面図第４図（ｂ）
手続補正書動式）
％式％
１、事件の表示
平成 ２年 特許願 第１２１０１２号２、発明の名称
電気光学装置
３、補正をする者
事件との関係 出願人
代表取締役 原 禮之助
５、補正命令の日付FIG. 1(a) is a circuit diagram of an X-Y matrix panel of an electro-optical device illustrating a first embodiment of the present invention, and FIG.
) is a plan view showing the structure of a nonlinear resistance element for explaining a first embodiment of the present invention. Figure 2(a) is an X-Y matrix panel circuit diagram of a conventional electro-optical device using nonlinear resistance elements, and Figure 2(b)
2(C) is a cross-sectional view showing the structure of a conventional electro-optical device using a non-linear resistance element, and FIG. 2(C) is a plan view showing the structure of the non-linear resistance element of the conventional electro-optical device. FIG. 2(a) is a diagram showing the waveform of the scanning signal applied to the first driving electrode, FIG. 2(b) is a diagram showing the waveform of the scanning signal applied to the second driving electrode, and FIG. C) is a diagram showing the waveform of the data signal applied to the counter electrode when all the pixels in the - column are ON, and FIG. The figure which shows the waveform of the data signal applied to a counter electrode when everything becomes OFF. FIG. 4(a) is a circuit diagram of an X-γ matrix panel of an electro-optical device explaining a second embodiment of the present invention, and FIG. 4(b)
) is a plan view showing the structure of a nonlinear resistance element for explaining a second embodiment of the present invention. A......Counter substrate B......Substrate 11, lla, llb, 21. 21a, 21
b, 41. 41a, 41b...... Row electrodes (
Driving electrode) 12.22.42... Column electrode (counter electrode) 13.23.43... Electro-optic material (liquid crystal) 14a, 14b, 14c, 14e, 14f, 14g, 1
4h, 24a, 24b, 44a, 44b, 44c, 44
d, 44e, 44f144g, 44h...Nonlinear resistance elements 15a, 15b, 15c, 15d, 25a, 25b, 45a, 45b--Nonlinear resistance layer 16.26.
46...Pixel electrodes 17a, 17b, 17c, 17d, 47a, 47b...
...・Connection electrode water gold 8th electric light 3 old 1 X-Y71 "J・n 7-fold circuit diagram Figure 1 (a') Figure 1 of the plan view (
b) Figure 2 (a) 111 - 23 Figure 2 (b) Figure 2 The second oracle of the unreleased moon: θho1X-YmaVI=,7
Subaful circuit diagram Figure 4 (a) Plan view showing the structure of the company line 46 pile rope of the second actual statement t1 of the present invention Figure 4 (b) Procedural amendment written type) % type % 1. Indication of the incident 1990 Patent Application No. 1210122, Name of the invention Electro-optical device3, Relationship to the person making the amendment case Applicant Representative Director Reinosuke Hara5, Date of amendment order
Claims (4)
光学効果を有する材料、一方の基板に形成した多数の行
電極群と他方の基板に形成した多数の列電極群、少なく
とも一方の基板にマトリックス状に配置された画素電極
群からなる電気光学装置において、前記画素電極群の各
電極毎にそれぞれ２ｎ個（ｎ＝２、３、４、…）の非線
形抵抗素子を設け、前記各画素電極を第１から第ｍ（２
≦ｍ≦２ｎ−２）の非線形抵抗素子を介して第１の行（
列）電極に、第ｍ＋１から第２ｎの非線形抵抗素子を介
して第２の行（列）電極に接続したことを特徴とする電
気光学装置。(1) Two opposing substrates and a material having an electro-optic effect sandwiched between the substrates, a large number of row electrode groups formed on one substrate and a large number of column electrode groups formed on the other substrate, at least one of them. In an electro-optical device comprising a group of pixel electrodes arranged in a matrix on a substrate, 2n (n=2, 3, 4,...) nonlinear resistance elements are provided for each electrode of the pixel electrode group, and the Each pixel electrode is
The first row (
An electro-optical device characterized in that the column electrode is connected to the second row (column) electrode via (m+1) to 2n-th nonlinear resistance elements.
１から第２ｎの非線形抵抗素子はそれぞれ少なくとも２
個以上が直列に接続されていることを特徴とする第１項
記載の電気光学装置。(2) The first to m-th nonlinear resistance elements and the m+
1 to 2n nonlinear resistance elements each have at least 2
2. The electro-optical device according to claim 1, wherein at least two electro-optical devices are connected in series.
１から第２ｎの非線形抵抗素子はそれぞれ少なくとも２
個以上が並列に接続されていることを特徴とする第１項
または第２項記載の電気光学装置。(3) The first to m-th nonlinear resistance elements and the m+
1 to 2n nonlinear resistance elements each have at least 2
3. The electro-optical device according to claim 1 or 2, wherein at least two electro-optical devices are connected in parallel.
たは第２項記載の電気光学装置。（５）前記第１から第
ｍの非線形抵抗素子と前記第ｍ＋１から第２ｎの非線形
抵抗素子の接続様式は同一であることを特徴とする第４
項記載の電気光学装置。(4) The electro-optical device according to item 1, item 2, or item 2, wherein m=n. (5) A fourth feature, wherein the first to m-th nonlinear resistance elements and the (m+1) to 2n-th nonlinear resistance elements are connected in the same manner.
Electro-optical device as described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12101290A JP2547118B2 (en) | 1990-05-10 | 1990-05-10 | Electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12101290A JP2547118B2 (en) | 1990-05-10 | 1990-05-10 | Electro-optical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04165333A true JPH04165333A (en) | 1992-06-11 |
| JP2547118B2 JP2547118B2 (en) | 1996-10-23 |
Family
ID=14800620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12101290A Expired - Fee Related JP2547118B2 (en) | 1990-05-10 | 1990-05-10 | Electro-optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2547118B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7184108B2 (en) * | 2003-03-28 | 2007-02-27 | Samsung Electronics Co., Ltd. | Display device and diode array panel therefor |
| JP2007165161A (en) * | 2005-12-15 | 2007-06-28 | Sharp Corp | Led illumination device, led backlight device, and image display device |
| WO2009072205A1 (en) * | 2007-12-06 | 2009-06-11 | Pioneer Corporation | Pixel circuit and display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201324A (en) * | 1984-03-26 | 1985-10-11 | Citizen Watch Co Ltd | Matrix display panel |
| JPS63303322A (en) * | 1987-06-03 | 1988-12-09 | Alps Electric Co Ltd | Liquid crystal display device |
| JPS6474532A (en) * | 1987-09-16 | 1989-03-20 | Fuji Electric Co Ltd | Active matrix display panel |
| JPH01138539A (en) * | 1987-11-26 | 1989-05-31 | Fuji Electric Co Ltd | Active matrix display panel |
| JPH0244315A (en) * | 1988-06-10 | 1990-02-14 | Philips Gloeilampenfab:Nv | Matrix display device |
-
1990
- 1990-05-10 JP JP12101290A patent/JP2547118B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201324A (en) * | 1984-03-26 | 1985-10-11 | Citizen Watch Co Ltd | Matrix display panel |
| JPS63303322A (en) * | 1987-06-03 | 1988-12-09 | Alps Electric Co Ltd | Liquid crystal display device |
| JPS6474532A (en) * | 1987-09-16 | 1989-03-20 | Fuji Electric Co Ltd | Active matrix display panel |
| JPH01138539A (en) * | 1987-11-26 | 1989-05-31 | Fuji Electric Co Ltd | Active matrix display panel |
| JPH0244315A (en) * | 1988-06-10 | 1990-02-14 | Philips Gloeilampenfab:Nv | Matrix display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7184108B2 (en) * | 2003-03-28 | 2007-02-27 | Samsung Electronics Co., Ltd. | Display device and diode array panel therefor |
| JP2007165161A (en) * | 2005-12-15 | 2007-06-28 | Sharp Corp | Led illumination device, led backlight device, and image display device |
| WO2009072205A1 (en) * | 2007-12-06 | 2009-06-11 | Pioneer Corporation | Pixel circuit and display panel |
| JP5031040B2 (en) * | 2007-12-06 | 2012-09-19 | パイオニア株式会社 | Pixel circuit and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2547118B2 (en) | 1996-10-23 |
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