JPH04159755A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04159755A JPH04159755A JP28492490A JP28492490A JPH04159755A JP H04159755 A JPH04159755 A JP H04159755A JP 28492490 A JP28492490 A JP 28492490A JP 28492490 A JP28492490 A JP 28492490A JP H04159755 A JPH04159755 A JP H04159755A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum wiring
- wiring
- film
- insulating film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に半導体基板とアルミニ
ウノ＼配線とのコンタクトを有する半導体装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a contact between a semiconductor substrate and an aluminum wire.
従来、半導体基板とアルミニウム配線とのコンタクト構
造は、半導体基板上に絶縁膜を有し、その絶縁膜にフォ
トエツチング工程を経てコンタクトホールを形成し、ア
ルミニウム膜を付着し、アルミニウム配線をパターンニ
ングして、半導体基板とアルミニウム配線とのコンタク
トを形成することによりコンタクト構造を有する半導体
装置を得ていた。Conventionally, the contact structure between a semiconductor substrate and aluminum wiring has an insulating film on the semiconductor substrate, a contact hole is formed in the insulating film through a photo-etching process, an aluminum film is attached, and the aluminum wiring is patterned. A semiconductor device having a contact structure has been obtained by forming a contact between a semiconductor substrate and an aluminum wiring.
この従来の半導体装置では、半導体基板とアルミニウム
配線の間の絶縁性を高める為に、厚い絶縁膜を必要とし
、その為にコンタクト部のアスペクト比が高くなって、
コンタクト部でのアルミニウム配線の断線を引き起こし
、歩留・品質低下の大きな原因になっていた。In this conventional semiconductor device, a thick insulating film is required to improve the insulation between the semiconductor substrate and the aluminum wiring, and as a result, the aspect ratio of the contact part becomes high.
This caused the aluminum wiring to break at the contact area, which was a major cause of a decline in yield and quality.
本発明の目的は、半導体基板とアルミニウム配線の間の
絶縁性を落すことなく、コンタクト部のアスペクト比を
低くし、アルミニウム配線の断線を生じにくくでき、歩
留・品質低下を防ぐことができ、かつ製作にあたっては
最低限の工数増で実施できる半導体装置を提供すること
にある。The purpose of the present invention is to lower the aspect ratio of the contact portion without reducing the insulation between the semiconductor substrate and the aluminum wiring, to make the aluminum wiring less likely to break, and to prevent a decrease in yield and quality. Another object of the present invention is to provide a semiconductor device that can be manufactured with a minimum increase in man-hours.
本発明の半導体装置は、コンタクＩ・部の絶縁膜に囲ま
れた円柱形のアルミニウム配線と、これと接続される他
のアルミニウム配線とを有することを特徴として構成さ
れる。The semiconductor device of the present invention is characterized by having a cylindrical aluminum wiring surrounded by an insulating film in a contact I section and another aluminum wiring connected to the cylindrical aluminum wiring.
第１図（ａ）〜（ｊ）は本発明の一実施例およびその製
造方法を説明する為に工程順に示した半導体装置の断面
図である。この実施例の半導体基板とアルミニウム配線
のコンタクト形成方法は、半導体基板１の表面に絶縁膜
２を付着さぜ（第１図（ａ））、この絶縁膜２をパター
ンニングする為に絶縁膜２表面にフォトレジスト膜３ａ
をパターンニングしく第１図（ｂ））、そのフォトレジ
スト膜３ａを保護膜としてエツチング処理を行ない、前
述の半導体基板］、とアルミニウム配線４ａのコンタク
１一部を形成するく第１図（Ｃ））。露出しな半導体基
板１と絶縁Ｍ２上にアルミニウム配線４ａを付着させ（
第１図（ｄ））、このアルミニウム配線４ａをパターン
ニングする為にアルミニウム配線４ａの表面にフォトレ
ジスト膜３１Ｄをパターンニングして（第１図（ｅ））
、次いで、フォトレジスト
を行ない、半導体基板１とアルミニウム配線４ａとのコ
ンタクト部を形成する。絶縁膜２とコンタクト部のアル
ミニウム配線４ａ上に半導体基板１とアルミニウム配線
４ａとの絶縁を行なう為の絶縁膜５を付着させ（第１図
（ｆ））、次に、絶縁膜５をアルミニウム配線４ａが露
出するまでエツチング処理を行ないく第１図（ｇ））、
絶縁膜５とアルミニウム配線４ａの表面にアルミニウム
配線４ｂを再度付着させ（第１図（ｈ））、フォトレジ
スト膜３ｃをパターンニングいて（第１図（ｉ））−こ
のフォトレジスト膜３ｃを保護膜として、エツチング処
理を行なって必要とするアルミニウム配線４ｂを形成す
る。FIGS. 1A to 1J are cross-sectional views of a semiconductor device shown in the order of steps to explain an embodiment of the present invention and its manufacturing method. The method of forming contact between a semiconductor substrate and aluminum wiring in this embodiment is to deposit an insulating film 2 on the surface of a semiconductor substrate 1 (FIG. 1(a)), and then pattern the insulating film 2. Photoresist film 3a on the surface
1(b)), and etching is performed using the photoresist film 3a as a protective film to form a part of the contact 1 between the aforementioned semiconductor substrate and the aluminum wiring 4a (FIG. 1(C)). )). Aluminum wiring 4a is attached on the exposed semiconductor substrate 1 and insulation M2 (
In order to pattern the aluminum wiring 4a, a photoresist film 31D is patterned on the surface of the aluminum wiring 4a (Fig. 1(e)).
Then, photoresist is applied to form a contact portion between the semiconductor substrate 1 and the aluminum wiring 4a. An insulating film 5 for insulating the semiconductor substrate 1 and the aluminum wiring 4a is deposited on the insulating film 2 and the aluminum wiring 4a of the contact portion (FIG. 1(f)), and then the insulating film 5 is attached to the aluminum wiring 4a. The etching process is performed until 4a is exposed (Fig. 1(g)),
The aluminum wiring 4b is attached again to the surface of the insulating film 5 and the aluminum wiring 4a (FIG. 1(h)), and the photoresist film 3c is patterned (FIG. 1(i)) - this photoresist film 3c is protected. As a film, an etching process is performed to form a necessary aluminum wiring 4b.
以上の工程により第１図（ｊ）に示すような本発明の一
実施例の半導体装置を得ることができる。Through the above steps, a semiconductor device according to an embodiment of the present invention as shown in FIG. 1(j) can be obtained.
以上説明したように本発明は、半導体基板とアルミニウ
ム配線とのコンタクトをアスペクト比の低い絶縁膜でと
ることにより、アルミ配線の断線の問題が生じに＜＜、
半導体装置の歩留，品質向上に大きく貢献できる。As explained above, the present invention prevents the problem of disconnection of the aluminum wiring by making contact between the semiconductor substrate and the aluminum wiring using an insulating film with a low aspect ratio.
It can greatly contribute to improving the yield and quality of semiconductor devices.
また、現状の製造方法より、最小限の工程数の増加で、
これからの微細な製品を得ることができる。In addition, compared to the current manufacturing method, with a minimum increase in the number of steps,
You can get fine products from this.
第１図（ａ）〜（ｊ＞は、本発明の一実施例およびその
製造方法を説明するために工程順に示した断面図である
。
］・・・半導体基板、２・・・絶縁膜、３ａ，３ｂ。
３Ｃ・・・フォトレジスト膜、４ａ，４ｂ・・・アルミ
ニー５＝
ラム配線、５・・・絶縁膜。
追 １ 閃1(a) to (j>) are cross-sectional views shown in the order of steps to explain an embodiment of the present invention and its manufacturing method. ]...Semiconductor substrate, 2...Insulating film, 3a, 3b. 3C... Photoresist film, 4a, 4b... Aluminum 5 = RAM wiring, 5... Insulating film. Addendum 1 Flash
Claims (1)
該絶縁膜上にパターンニングされたアルミニウム配線と
を有し、前記アルミニウム配線と前記半導体基板とのコ
ンタクトが形成されてなる半導体装置において、前記半
導体基板上に形成された絶縁膜と、該絶縁膜に形成され
たコンタクトホールと、該コンタクトホール部のみに形
成され周囲を絶縁膜に囲まれた円柱形のアルミニウム配
線と該円柱形のアルミニウム配線に接続された任意のア
ルミニウム配線とを有することを特徴とする半導体装置
。a semiconductor substrate; an insulating film formed on the semiconductor substrate;
A semiconductor device comprising an aluminum wiring patterned on the insulating film, and a contact between the aluminum wiring and the semiconductor substrate is formed, the insulating film formed on the semiconductor substrate, and the insulating film. A contact hole formed in the contact hole, a cylindrical aluminum wiring formed only in the contact hole and surrounded by an insulating film, and an arbitrary aluminum wiring connected to the cylindrical aluminum wiring. semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28492490A JPH04159755A (en) | 1990-10-23 | 1990-10-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28492490A JPH04159755A (en) | 1990-10-23 | 1990-10-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04159755A true JPH04159755A (en) | 1992-06-02 |
Family
ID=17684825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28492490A Pending JPH04159755A (en) | 1990-10-23 | 1990-10-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04159755A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893261A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6025255A (en) * | 1983-07-22 | 1985-02-08 | Nec Corp | Manufacture of semiconductor device |
| JPS61248471A (en) * | 1985-04-26 | 1986-11-05 | Hitachi Ltd | Semiconductor device |
| JPH01209743A (en) * | 1988-02-17 | 1989-08-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1990
- 1990-10-23 JP JP28492490A patent/JPH04159755A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893261A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6025255A (en) * | 1983-07-22 | 1985-02-08 | Nec Corp | Manufacture of semiconductor device |
| JPS61248471A (en) * | 1985-04-26 | 1986-11-05 | Hitachi Ltd | Semiconductor device |
| JPH01209743A (en) * | 1988-02-17 | 1989-08-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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