JPH0415961A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPH0415961A JPH0415961A JP2120785A JP12078590A JPH0415961A JP H0415961 A JPH0415961 A JP H0415961A JP 2120785 A JP2120785 A JP 2120785A JP 12078590 A JP12078590 A JP 12078590A JP H0415961 A JPH0415961 A JP H0415961A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- layer
- mesa
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract 7
- 238000005530 etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000000704 physical effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 30
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 3
- 230000002265 prevention Effects 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は異種基板上に形成された太陽電池に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) This invention relates to a solar cell formed on a heterogeneous substrate.
［従来の技術］
第３図は、例えばＳｉ基板上に形成されたＧａＡｓ太陽
電池の平面図（ａ）、及び断面側面図（ｂ）である。図
において、■は第１の導電型のＳｉ基板、２は第１の導
電型のＧａＡｓ層、３は第２の導電型のＧａＡｓ層、４
は第２の導電型のＡｊ！ＧａＡＳ層、５は反射防止膜、
６は表面電極、７は裏面電極である。また、８ａは太陽
電池の外側となる部分を第１の導電型のＳｉ基板１まで
エツチングを行ったメサ溝である。[Prior Art] FIG. 3 is a plan view (a) and a cross-sectional side view (b) of a GaAs solar cell formed on, for example, a Si substrate. In the figure, ■ is the Si substrate of the first conductivity type, 2 is the GaAs layer of the first conductivity type, 3 is the GaAs layer of the second conductivity type, and 4 is the GaAs layer of the second conductivity type.
is the second conductivity type Aj! GaAS layer, 5 is an antireflection film,
6 is a front electrode, and 7 is a back electrode. Moreover, 8a is a mesa groove in which the portion that becomes the outer side of the solar cell is etched down to the first conductivity type Si substrate 1.
第３図において、第１の導電型のＧａＡｓ層２゜第２の
導電型のＧａＡｓ層３．第２の導電型のＡｌＧａＡｓ層
４は、ＭＯＣＶＤ法等の結晶成長法により第１の導電型
のＳｉ基板１上に形成される。In FIG. 3, a first conductivity type GaAs layer 2, a second conductivity type GaAs layer 3. The second conductive type AlGaAs layer 4 is formed on the first conductive type Si substrate 1 by a crystal growth method such as MOCVD.
メサ溝８ａは第１の導電型のＧａＡｓ層２が数μｍ成長
した後エツチングにより形成される。そして、反射防止
膜５９表面電極６．裏面電極７が形成される。The mesa groove 8a is formed by etching after the first conductivity type GaAs layer 2 has grown several micrometers. Then, the antireflection film 59 surface electrode 6. A back electrode 7 is formed.
また、太陽電池の外側となる部分を第１の導電型のＳｉ
基板１までエツチングを行ってメサ溝８ａを形成するの
は、太陽電池の内側のＧａＡｓ層２．３に発生するクラ
ンクを防止するためであり、クランクを防止することに
より電流リークを少なくし、高効率の太陽電池を得るこ
とができる。In addition, the outer part of the solar cell is made of Si of the first conductivity type.
The reason why the mesa groove 8a is formed by etching up to the substrate 1 is to prevent cranks from occurring in the GaAs layer 2.3 inside the solar cell.By preventing cranks, current leakage is reduced and high You can get efficient solar cells.
一般に、Ｓｉ基板上に形成されたＧａＡｓ太陽電池は、
ＳｔとＧａＡｓの熱膨張係数差に起因した内部ストレス
がＧａＡｓ層中に残留しており、クラックが発生しやす
く、クランクの発生により電流リークが起こり、太陽電
池特性が低下するという問題点があった。従来は、太陽
電池の外側となる部分にメサ溝を形成することにより太
陽電池の内側に発生するクランクを防止してきたが、セ
ルサイズの大型化により太陽電池の外側に形成するメサ
溝だけでは太陽電池の内側に発生するクランクを完全に
防止することが難しいという問題点が起こってきた。ま
た、表面電極の蒸着によるストレスも大きく、電極スト
レスによりクランクが発生するという問題点もあった。Generally, a GaAs solar cell formed on a Si substrate is
Internal stress caused by the difference in thermal expansion coefficient between St and GaAs remains in the GaAs layer, which causes cracks to easily occur, causing current leakage due to the occurrence of cranks, resulting in a reduction in solar cell characteristics. . Conventionally, cranks that occur on the inside of solar cells have been prevented by forming mesa grooves on the outside of the solar cells, but due to the increase in cell size, the mesa grooves formed on the outside of the solar cells alone are insufficient to prevent solar A problem has arisen in that it is difficult to completely prevent cranks from occurring inside the battery. In addition, the stress caused by the deposition of the surface electrode is large, and there is also the problem that cranking occurs due to the electrode stress.
この発明は上記のような問題点を解消するためになされ
たもので、太陽電池の内側のＣｒａＡｓ層中にクランク
のないＳｉｌ板上のＧａＡｓ太陽電池を得ることを目的
とする。This invention was made to solve the above-mentioned problems, and its purpose is to obtain a GaAs solar cell on a Sil plate without a crank in the CraAs layer inside the solar cell.
Ｃ課題を解決するための手段〕
この発明に係るＳｉ基板上のＧａＡｓ太陽電池は、太陽
電池の外側となる部分にメサ溝を形成するときに同時に
表面電極、即ち光電流を収集するための集電極であるグ
リッド電極、及び外部への電気的接続がなされる集電極
が連結された共通電極であるバス電極の両方、の下部と
なるところに電極より細いメサ溝を形成し、該メサ溝を
反射防止膜（絶縁膜）で覆い、その上に第２の導電型の
ＧａＡｓ層とコンタクトがとれるように表面電極を形成
したものである。Means for Solving Problem C] In the GaAs solar cell on a Si substrate according to the present invention, when a mesa groove is formed in the outer part of the solar cell, a surface electrode, that is, a collector for collecting photocurrent is formed at the same time. A mesa groove that is narrower than the electrode is formed at the bottom of both the grid electrode, which is an electrode, and the bus electrode, which is a common electrode to which a collector electrode is connected, which is electrically connected to the outside. It is covered with an antireflection film (insulating film), and a surface electrode is formed thereon so as to be in contact with the second conductivity type GaAs layer.
この発明におけるＳｉ基板上のＧａＡｓ太陽電池は、太
陽電池の内側のＧａＡｓ層をメサ溝により小面積部分に
分割することにより、太陽電池の内側に発生するクラン
クを防止する。また、表面電極（グリッド電極、バス電
極の両方）の下部にメサ溝を形成することにより、電極
によるストレスを減少し、クラックを防止する。The GaAs solar cell on a Si substrate according to the present invention prevents cranks from occurring inside the solar cell by dividing the GaAs layer inside the solar cell into small area portions using mesa grooves. Furthermore, by forming mesa grooves under the surface electrodes (both grid electrodes and bus electrodes), stress caused by the electrodes is reduced and cracks are prevented.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例によるＳｉ基板上のＧａＡ
ｓ太陽電池の平面構造（ａ）、及び断面構造（ｂ）を示
し、第２図はその製造工程に従った断面構造の変化を示
す、第１図において、１は第１の導電型のＳｉ基板、２
は第１の導電型のＧａＡｓ層、３は第２の導電型のＣａ
Ａｓ層、４は第２の導電型のＡｊ２ＧａＡｓ層、５は反
射防止膜、６は表面電極の１つであるグリッド電極、６
′は表面電極の他の１つであるバス電極、７は裏面電極
、８はメサ溝である。FIG. 1 shows GaA on a Si substrate according to an embodiment of the present invention.
s A planar structure (a) and a cross-sectional structure (b) of the solar cell are shown, and FIG. 2 shows changes in the cross-sectional structure according to the manufacturing process. In FIG. Substrate, 2
3 is a GaAs layer of the first conductivity type, and 3 is a Ca layer of the second conductivity type.
4 is an As layer, 4 is a second conductivity type Aj2GaAs layer, 5 is an antireflection film, 6 is a grid electrode that is one of the surface electrodes, 6
' is a bus electrode which is another one of the front electrodes, 7 is a back electrode, and 8 is a mesa groove.
第２図（ａ）は第１の導電型のＳｉ基板１上に第１の導
電型のＧａＡｓ層２を数μｍ成長した後、太陽電池の外
側（８ａ）と表面電極６，６′の下部となるところ（８
ｂ）を第１の導電型のＳｉ基板１までエツチングし、メ
サ溝８を形成したものである。FIG. 2(a) shows the outer side of the solar cell (8a) and the lower part of the surface electrodes 6, 6' after a GaAs layer 2 of the first conductivity type is grown several μm thick on the Si substrate 1 of the first conductivity type. Where it becomes (8
b) is etched down to the first conductivity type Si substrate 1 to form a mesa groove 8.
この後、第２図ｂ）に示すように第１の導電型のＧａＡ
ｓ層２を所定の厚さまで成長し、第２の導電型のＧａＡ
ｓ層３．第２の導電型のＡＩ！、ＣａＡｓ層４を形成す
る。このとき、メサ溝８には選択的にＧａＡｓ層は成長
されない。After this, as shown in FIG. 2b), the first conductivity type GaA
The s-layer 2 is grown to a predetermined thickness, and the second conductivity type GaA is grown.
s layer 3. Second conductivity type AI! , a CaAs layer 4 is formed. At this time, the GaAs layer is not selectively grown in the mesa groove 8.
そして、第２図（Ｃ）に示すように第２の導電型のＡｌ
ＧａＡｓ層４とメサ溝８ａ、８ｂ上に反射防止ＪＩＩ５
を形成し、第２図（ｄ）に示すように、メサ溝８ａにつ
いては反射防止膜５を全部、メサ溝８ｂについては第２
の導電型のＧａＡｓ層３とコンタクトがとれるように反
射防止膜５をエンチングし、次に表面電極６，６′、そ
して裏面電極７を形成して第１図に示した構造を得るこ
とができる。Then, as shown in FIG. 2(C), a second conductivity type Al
Anti-reflection JII 5 on the GaAs layer 4 and mesa grooves 8a and 8b
As shown in FIG. 2(d), the entire anti-reflection film 5 is applied to the mesa groove 8a, and the second anti-reflection film 5 is applied to the mesa groove 8b.
The antireflection film 5 is etched so as to be in contact with the GaAs layer 3 of the conductivity type, and then the front electrodes 6, 6' and the back electrode 7 are formed to obtain the structure shown in FIG. .
上記実施例に示した構造（第１図）かられかるように、
この実施例においては、第１の導電型のＳｉ基板１上の
太陽電池の内側のＧ ａ Ａ ｓ’ Ｎ ２ 。As can be seen from the structure shown in the above example (Fig. 1),
In this example, Ga As' N 2 inside the solar cell on the Si substrate 1 of the first conductivity type.
３がメサ溝８により小面積部分に分割されているため、
太陽電池の内側に発生するクラックを防止することがで
きる。また、表面電極６．６′の下部にメサ溝８を形成
しているため、電極によるストレスを減少し、クシツク
の発生を防止することができる。以上のことからクラン
ク番こよる電流す−クを防ぐことができ、信軌性の高い
高効率の太陽電池を得ることができる。3 is divided into small area parts by the mesa groove 8,
It is possible to prevent cracks from occurring inside the solar cell. Further, since the mesa groove 8 is formed under the surface electrode 6, 6', the stress caused by the electrode can be reduced and the occurrence of wrinkles can be prevented. From the above, it is possible to prevent current leakage due to crank speed, and to obtain a highly reliable and highly efficient solar cell.
また、太陽電池の内側のメサ溝８を表面電極６６′の下
部に形成したため、有効面積を減らすことなく上記の効
果を得ることができる。Furthermore, since the mesa groove 8 inside the solar cell is formed below the surface electrode 66', the above effects can be obtained without reducing the effective area.
なお、上記実施例ではＳｉ基板上のＧａＡｓ太陽電池に
ついて説明したが、他の熱膨張係数等、物性定数の異な
る異種基板上の太陽電池においても同様の効果が得られ
る。In the above embodiment, a GaAs solar cell on a Si substrate was described, but similar effects can be obtained in a solar cell on a different type of substrate having different physical constants such as a coefficient of thermal expansion.
以上のように、この発明によれば、第１の導電型のＳｉ
基板上の太陽電池の内側のＧａＡｓ層が小面積部分に分
割されるように構成したので、太ＦＩ！ｔｉｆ池の内側
に発生するクランクを防止することができ、また表面電
極の下部にメサ溝を形成したので、効率を低下させるこ
となく電極ストレスによるクラックを防止することがで
きるという効果がある。As described above, according to the present invention, the first conductivity type Si
Since the GaAs layer inside the solar cell on the substrate is divided into small area parts, a large FI! Cracks occurring inside the TIF pond can be prevented, and since mesa grooves are formed at the bottom of the surface electrode, cracks due to electrode stress can be prevented without reducing efficiency.
第１図（ａ）はこの発明の一実施例によるＳｉ基板上の
ＧａＡｓ太陽電池を示す平面図、第１図（ｂ））はその
断面側面図、第２図はその製造工程に従った断面側面図
、第３図（ａ）は従来のＳｉ基板上のＧａＡｓ太陽電池
を示す平面図、第３図由）はその断面側面図である。
１は第１の導電型のＳｉ基板、２は第１の導電型のＧａ
Ａｓ層、３は第２の導電型のＧ ａ Ａ ｓ層、４は第
２の導電型のＡｆＧａＡｓ層、５は反射防止膜、６は表
面電極（グリッド電極）、６′は表面電極（バス電極）
、７は裏面電極、８はメサ溝である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1(a) is a plan view showing a GaAs solar cell on a Si substrate according to an embodiment of the present invention, FIG. 1(b) is a cross-sectional side view thereof, and FIG. 2 is a cross-sectional view according to the manufacturing process. 3(a) is a plan view showing a conventional GaAs solar cell on a Si substrate, and FIG. 3(a) is a cross-sectional side view thereof. 1 is a Si substrate of the first conductivity type, 2 is a Ga substrate of the first conductivity type.
3 is a second conductivity type GaAs layer, 4 is a second conductivity type AfGaAs layer, 5 is an antireflection film, 6 is a surface electrode (grid electrode), and 6' is a surface electrode (bus electrode)
, 7 is a back electrode, and 8 is a mesa groove. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
の半導体と熱膨張係数等、物性定数の異なる第２の半導
体からなる層を形成して形成される太陽電池において、 集電極及び外部への電気的接続がなされる集電極が連結
された共通電極よりなる表面電極の下部に、上記第２の
半導体層が上記第１の半導体からなる基板までエッチン
グされてなるメサ溝が形成されていることを特徴とする
太陽電池。(1) On a semiconductor substrate made of a first semiconductor, the first
In a solar cell formed by forming a layer consisting of a semiconductor and a second semiconductor having different physical property constants such as coefficient of thermal expansion, a collector electrode and a common electrode connected to the collector electrode that is electrically connected to the outside. A solar cell characterized in that a mesa groove is formed by etching the second semiconductor layer down to the substrate made of the first semiconductor at the bottom of the surface electrode made of the material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2120785A JPH0415961A (en) | 1990-05-09 | 1990-05-09 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2120785A JPH0415961A (en) | 1990-05-09 | 1990-05-09 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0415961A true JPH0415961A (en) | 1992-01-21 |
Family
ID=14794941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2120785A Pending JPH0415961A (en) | 1990-05-09 | 1990-05-09 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0415961A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010262975A (en) * | 2009-04-30 | 2010-11-18 | Sharp Corp | Solar cell and method for manufacturing the same |
| US20110232733A1 (en) * | 2010-03-29 | 2011-09-29 | Astrium Gmbh | Multi-Junction Solar Cell For Space Applications |
-
1990
- 1990-05-09 JP JP2120785A patent/JPH0415961A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010262975A (en) * | 2009-04-30 | 2010-11-18 | Sharp Corp | Solar cell and method for manufacturing the same |
| US20110232733A1 (en) * | 2010-03-29 | 2011-09-29 | Astrium Gmbh | Multi-Junction Solar Cell For Space Applications |
| US10312392B2 (en) * | 2010-03-29 | 2019-06-04 | Airbus Defence and Space GmbH | Multi-junction solar cell for space applications |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5131933A (en) | Solar cell | |
| US4994879A (en) | Photoelectric transducer with light path of increased length | |
| US8421074B2 (en) | Semiconductor device with heterojunctions and an interdigitated structure | |
| US5100478A (en) | Solar cell | |
| EP0666602B1 (en) | Method of manufacturing a GaAs solar cell on a Si substrate | |
| JPH01501511A (en) | Solar cell with improved front metallization | |
| EP0987768A1 (en) | Solar cell | |
| JPH0231508B2 (en) | ||
| US4931412A (en) | Method of producing a thin film solar cell having a n-i-p structure | |
| US11316058B2 (en) | Stacked multi-junction solar cell with a metallization comprising a multilayer system | |
| JP2548820B2 (en) | Compound semiconductor photoelectric conversion device on Si substrate | |
| JP2878031B2 (en) | Thin solar cell and manufacturing method | |
| US20230361232A1 (en) | Solar cells having hybrid architectures including differentiated p-type and n-type regions with offset contacts | |
| JPH02260667A (en) | Compound semiconductor solar cell on silicon substrate and manufacture thereof | |
| US4956685A (en) | Thin film solar cell having a concave n-i-p structure | |
| JPH0415961A (en) | Solar cell | |
| EP0986108A1 (en) | Solar cell | |
| JP3085180B2 (en) | Field effect solar cell | |
| JPS6148798B2 (en) | ||
| JP3105999B2 (en) | Solar cell manufacturing method | |
| JP4115071B2 (en) | Photovoltaic device | |
| JP2001068709A (en) | Thin-film solar battery | |
| JP2892921B2 (en) | Photovoltaic device | |
| JPH11121774A (en) | Gallium arsenide solar cell | |
| JP2001068702A (en) | Manufacture of silicon based thin film photoelectric conversion device |