JPH04155929A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPH04155929A JPH04155929A JP28155290A JP28155290A JPH04155929A JP H04155929 A JPH04155929 A JP H04155929A JP 28155290 A JP28155290 A JP 28155290A JP 28155290 A JP28155290 A JP 28155290A JP H04155929 A JPH04155929 A JP H04155929A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- aluminum
- aluminum film
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 238000005468 ion implantation Methods 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 5
- 239000011733 molybdenum Substances 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 5
- 239000010937 tungsten Substances 0.000 claims abstract description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000005012 migration Effects 0.000 abstract description 4
- 238000013508 migration Methods 0.000 abstract description 4
- 230000035882 stress Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法に関し、特にアルミニ
ウム配線の形成方法に関するものであ２〔従来の技術〕
現在、半導体装置の配線材料としては、主にアルミニウ
ムが用いられてお９、その形成にあたっては、第２図の
７０−に示す様に、まず、半導体基板１上に厚いフィー
ルド酸化膜２を形成し、上記フィールド酸化膜２上に、
ゲート配線３を形成する（α）。次に、層間絶縁膜とし
て酸化膜４をＯＶＤ法等により形成しＣｂ）、半導体基
板１のソース・ドレイン領域５上の上記層間絶縁膜４を
ζ エツチングし、コンタクト穴を形成する（Ｃ）。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for forming aluminum wiring.2 [Prior Art] Currently, aluminum is used as a wiring material for semiconductor devices. , aluminum is mainly used 9. In its formation, a thick field oxide film 2 is first formed on the semiconductor substrate 1, as shown at 70- in FIG. ,
Gate wiring 3 is formed (α). Next, an oxide film 4 is formed as an interlayer insulating film by an OVD method (Cb), and the interlayer insulating film 4 on the source/drain region 5 of the semiconductor substrate 1 is etched to form a contact hole (C).
〕 更に、配線用のアルミニウム膜６をスパッタ法で
形成しくｄ）、フォトリング：７フイー法、及びエテ
ッチング法により上記配線用のアルミニウム膜６をパ
ターニングする（−）、製造方法であった。] Furthermore, an aluminum film 6 for wiring is formed by a sputtering method.
The manufacturing method involved patterning (-) the aluminum film 6 for wiring using a etching method.
しかしながら、配線構造の微細化が進み、配線幅の細い
部分では、幅方向にせいぜ〜九−つの結晶粒しか存在し
ないバンブー構造になる。そうすると、隣りあった結晶
粒の結晶軸方向（ｔｌｌ）ｉｆ近接していた場合、後の
工程で加えられる熱応力によりボイドが発生す漬が、そ
のボイドがスリット状になりストレスマイグレーション
に至る、という問題点を有していた。However, as the wiring structure becomes finer, a bamboo structure is formed in which only nine crystal grains are present in the width direction in the narrow wiring width portion. Then, if adjacent crystal grains are close to each other in the crystal axis direction (tll), voids will be generated due to thermal stress applied in a later process, but the voids will become slit-shaped and lead to stress migration. It had some problems.
日経マイクロデバイス １９９０年５月手崎他 ストレ
スマイグレーションによるＡ１の断線機構を定量的に解
析
〔課題を解決するための手段〕
本発明の半導体装置の製造方法は、半導体装置の配線構
造を形成するにあたり、スパッタ法により形成された直
後の配線用のアルミニウム膜に、原子量の大きいタング
ステン、モリブデン、パラジウム、チタン等の金属元素
を、イオン・インプラ法により注入し、上記配線用のア
ルミニウム膜の結晶粒界を破壊し、アモルファス化する
ことを特徴とする。Nikkei Micro Devices, May 1990 Tezaki et al. Quantitative analysis of the disconnection mechanism of A1 due to stress migration [Means for solving the problem] The method for manufacturing a semiconductor device of the present invention includes the following steps in forming the wiring structure of a semiconductor device: Metal elements with large atomic weights such as tungsten, molybdenum, palladium, and titanium are implanted into the aluminum film for wiring immediately after it is formed by the sputtering method using the ion implantation method to form the crystal grain boundaries of the aluminum film for wiring. It is characterized by destruction and becoming amorphous.
第１図のフローは、本発明の実施例における断面図であ
る。１は半導体基板、２はフィールド酸化膜である。ま
ず、上記フィールド酸化膜２上に多結晶シリコン等によ
りゲート配線３を形成しくα）、上記ゲート配線３上に
、層間絶縁膜として酸化膜４をＯＶＤ法等により形成す
る（ｂ）。The flow shown in FIG. 1 is a sectional view of an embodiment of the present invention. 1 is a semiconductor substrate, and 2 is a field oxide film. First, a gate wiring 3 is formed of polycrystalline silicon or the like on the field oxide film 2 (a), and an oxide film 4 is formed as an interlayer insulating film on the gate wiring 3 by an OVD method or the like (b).
次に、半導体基板１のソース・ドレイン領域５上の上記
層間絶縁膜４をエツチングし、コンタクト穴を形成しく
Ｃ）、配線用のアルミニウム膜６をスパッタ法により形
成する（ｄ）。スパッタ法により形成された直後のアル
ミニウム膜には、第１図（ｄ）に示すとおり結晶粒界が
存在し、結晶粒の大きさはスパッタ時の温度に依存し、
高温でスパッタされる程大きくなる。この結晶粒界を破
壊するために、上記配線用のアルミニウム膜６に、タン
グステン、モリブデン、パラジウム、チタン等、原子番
号が２０以上の金属元素をイオン・インプラ法により注
入し、配線用のアルミニウム膜をアモルファス化する（
１゜この時の条件はドーズ量にして１０１４〜１０１７
ケ／ｄ、 加速電圧６０ＫｅＶ以上とするが、加速電圧
が高い程、結晶構造に対するダメージは大きく有効であ
る。Next, the interlayer insulating film 4 on the source/drain region 5 of the semiconductor substrate 1 is etched to form a contact hole (c), and an aluminum film 6 for wiring is formed by sputtering (d). As shown in Figure 1(d), crystal grain boundaries exist in the aluminum film immediately after being formed by sputtering, and the size of the crystal grains depends on the temperature during sputtering.
The higher the temperature of sputtering, the larger it becomes. In order to destroy this crystal grain boundary, a metal element having an atomic number of 20 or more, such as tungsten, molybdenum, palladium, titanium, etc., is implanted into the aluminum film 6 for wiring using the ion implantation method. to amorphous (
1゜The conditions at this time are 1014 to 1017 in terms of dose.
The acceleration voltage is set to be 60 KeV or more, but the higher the acceleration voltage, the more effective the damage to the crystal structure is.
更に、アモルファス化した配線用アルミニウム族７を、
フォトリソグラフィー法及び、エツチング法によりバタ
ーニングする（１）。Furthermore, amorphous aluminum group 7 for wiring,
Buttering is performed by photolithography and etching (1).
なお、第１図の実施例においては、配線材料としてアル
ミニウムを用いたが、純粋なアルミニウムに限らず、シ
リコン、鋼等の金属を含有しているアルミニウムを用い
ることも可能である。Although aluminum is used as the wiring material in the embodiment shown in FIG. 1, it is not limited to pure aluminum, and aluminum containing metals such as silicon and steel can also be used.
以上述べた様に、本発明によれば、スパッタ法により形
成された直後の配線用のアルミニウム膜に、原子量の大
きいタングステン、モリブデン、パラジウム、チタン等
の金属元素を、イオン・インプラ法により注入し、上記
配線用のアルミニウム膜の結晶粒界を破壊し、アモルフ
ァス化することにより、ストレスマイグレーシランを防
止し、信頼性を向上させることができた。As described above, according to the present invention, a metal element having a large atomic weight such as tungsten, molybdenum, palladium, or titanium is implanted by the ion implantation method into an aluminum film for wiring immediately after it is formed by the sputtering method. By destroying the crystal grain boundaries of the aluminum film for wiring and making it amorphous, it was possible to prevent stress migration and improve reliability.
第１図（ｅＬ）〜（１）は本発明の一実施例の主要断面
図、第２図（α）〜（＝）は従来例の主要断面図。
１・・・・・・・・・半導体基板
２・・・・・・・・・フィールド酸化膜３・・・・・・
・・・ゲート配線
４・・・・・・・・・層間絶縁膜
５・・・・・・・・・ソース・ドレイン領域６・・・・
・・・・・配線用のアルミニウム膜７０８．１０００６
．アエヤ７アス化した配線用のアルミニウム膜
以上
出願人 セイコーエプソン株式会社
代理人 弁理士 鈴木喜ミ部（他１名）°紹１・」
、ｉ２１FIGS. 1(eL) to (1) are main sectional views of an embodiment of the present invention, and FIGS. 2(α) to (=) are main sectional views of a conventional example. 1... Semiconductor substrate 2... Field oxide film 3...
...Gate wiring 4...Interlayer insulating film 5...Source/drain region 6...
...Aluminum film for wiring 708.10006
．． Aluminum film for wiring that has become 7-A
Claims (1)
法により形成された直後の配線用のアルミニウム膜に、
タングステン、モリブデン、パラジウム、チタン等、原
子番号が２０以上の金属元素をイオン・インプラ法によ
り注入し、上記配線用のアルミニウム膜の結晶粒界を破
壊し、アモルファス化することを特徴とする半導体装置
の製造方法。When forming the wiring structure of a semiconductor device, an aluminum film for wiring is coated immediately after being formed by sputtering.
A semiconductor device characterized in that a metal element having an atomic number of 20 or more, such as tungsten, molybdenum, palladium, or titanium, is implanted by an ion implantation method to destroy the crystal grain boundaries of the aluminum film for wiring and make it amorphous. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28155290A JPH04155929A (en) | 1990-10-19 | 1990-10-19 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28155290A JPH04155929A (en) | 1990-10-19 | 1990-10-19 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04155929A true JPH04155929A (en) | 1992-05-28 |
Family
ID=17640776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28155290A Pending JPH04155929A (en) | 1990-10-19 | 1990-10-19 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04155929A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19527368A1 (en) * | 1994-07-26 | 1996-02-08 | Toshiba Kawasaki Kk | Semiconductor device fabrication method |
| US20150279809A1 (en) * | 2014-03-31 | 2015-10-01 | Rama I. Hegde | Structure for aluminum pad metal under ball bond |
-
1990
- 1990-10-19 JP JP28155290A patent/JPH04155929A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19527368A1 (en) * | 1994-07-26 | 1996-02-08 | Toshiba Kawasaki Kk | Semiconductor device fabrication method |
| DE19527368C2 (en) * | 1994-07-26 | 2001-09-13 | Toshiba Kawasaki Kk | Manufacturing method of a semiconductor device with single crystal wiring layers |
| US20150279809A1 (en) * | 2014-03-31 | 2015-10-01 | Rama I. Hegde | Structure for aluminum pad metal under ball bond |
| US9343422B2 (en) * | 2014-03-31 | 2016-05-17 | Freescale Semiconductor, Inc. | Structure for aluminum pad metal under ball bond |
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