JPH04149008A - Production of superconducting material - Google Patents
Production of superconducting materialInfo
- Publication number
- JPH04149008A JPH04149008A JP2273263A JP27326390A JPH04149008A JP H04149008 A JPH04149008 A JP H04149008A JP 2273263 A JP2273263 A JP 2273263A JP 27326390 A JP27326390 A JP 27326390A JP H04149008 A JPH04149008 A JP H04149008A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- gas pressure
- film
- initial stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 title abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000012808 vapor phase Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 15
- 239000012495 reaction gas Substances 0.000 claims description 4
- 229910000856 hastalloy Inorganic materials 0.000 abstract description 10
- 239000002356 single layer Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 239000002887 superconductor Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 17
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、気相法で堆積させる方法による超電導導体の
作製方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for producing a superconducting conductor by a vapor phase deposition method.
［従来の技術およびその課題］
従来、超電導導体の作製方法として、可撓性基板上に直
接またはバッファ層を介して酸化物超電導体層を気相法
で堆積させる方法が行われている。[Prior Art and its Problems] Conventionally, as a method for producing a superconducting conductor, a method has been used in which an oxide superconductor layer is deposited on a flexible substrate directly or via a buffer layer by a vapor phase method.
この方法は、一般に薄膜性線材化と呼ばれている。This method is generally called thin-film wire production.
しかしながら、可撓性の金属基板やバッファ層は、通常
いずれも多結晶体であるため、これらの上に酸化物超電
導体材料を被着した場合、得られる酸化物超電導体は、
多結晶体しか得られず、これは単結晶体の上に形成した
場合の酸化物超電導体よりも臨界電流密度ＣＪ Ｃ）か
著しく低い。However, since flexible metal substrates and buffer layers are usually polycrystalline, when an oxide superconductor material is deposited on them, the resulting oxide superconductor is
Only polycrystalline materials are obtained, which have significantly lower critical current densities (CJ C) than oxide superconductors when formed on single crystals.
このようなことから、可撓性の金属基板やバッファ層を
設けた基板上に高いＪｃを持つ酸化物超電導体を作製す
ることができる方法の開発が鋭意進められている。For these reasons, efforts are being made to develop a method that can produce an oxide superconductor with a high Jc on a flexible metal substrate or a substrate provided with a buffer layer.
本発明はかかる点に鑑みてなされたものてあり、可撓性
金属基板やバッファ層上に高いＪｃを持つ酸化物超電導
体層を作製できる方法を提供することを目的とする。The present invention has been made in view of these points, and an object of the present invention is to provide a method for producing an oxide superconductor layer having a high Jc on a flexible metal substrate or a buffer layer.
［課題を解決するための手段］
一般に気相法による薄膜の成長過程は大体以下のよって
ある。まず、基板上に薄膜を構成する原子か飛来して付
着する。この薄膜構成原子は、運動エネルギーを有する
ので基板表面をマイグレーションする。このマイグレー
ションする薄膜構成原子は、基板表面の表面ポテンシャ
ルの低い部分に捕獲される。捕獲された薄膜構成原子が
、いわゆる結晶成長核となる。その後、薄膜構成原子が
基板上に次々と飛来するので、薄膜構成原子か基板上を
マイグレーションする自由度か減少する。[Means for Solving the Problem] Generally, the process of growing a thin film by a vapor phase method is roughly as follows. First, the atoms that make up the thin film fly in and adhere to the substrate. The atoms constituting the thin film have kinetic energy and migrate over the substrate surface. These migrating atoms constituting the thin film are captured in a portion of the substrate surface where the surface potential is low. The captured thin film constituent atoms become so-called crystal growth nuclei. Thereafter, the thin film constituent atoms fly onto the substrate one after another, and the degree of freedom for the thin film constituent atoms to migrate on the substrate decreases.
そして、薄膜構成原子のマイグレーションが不可能にな
ると結晶成長核を中心として結晶成長が始まる。この結
晶成長の初期段階は、形成される薄膜の結晶性を支配す
る非常に重要な過程であると考えられる。Then, when migration of the atoms constituting the thin film becomes impossible, crystal growth begins centered around the crystal growth nucleus. This initial stage of crystal growth is considered to be a very important process that controls the crystallinity of the formed thin film.
一方、多結晶体基板上に形成した酸化物超電導体薄膜は
、必ず多結晶体であり１．それにおいて高いＪｃを有す
る薄膜を得るためには、薄膜か緻密になるように結晶成
長させる必要がある。このためには、結晶成長初期段階
において酸化物超電導体を基板上に島状に成長させるの
ではなく、基板全面にわたって単層成長させることが必
要である。On the other hand, an oxide superconductor thin film formed on a polycrystalline substrate is always polycrystalline; In order to obtain a thin film having a high Jc, it is necessary to grow crystals so that the thin film becomes dense. For this purpose, it is necessary to grow the oxide superconductor in a single layer over the entire surface of the substrate, rather than growing it in an island shape on the substrate at the initial stage of crystal growth.
酸化物超電導体を基板全面にわたって単層成長させるた
めには、基板の表面自由エネルギーか大きい方か良く、
それはすなわち、薄膜構成原子のエネルギーか大きい程
都合が良いことになる。この薄膜構成原子のエネルギー
を大きくする効果的な手段として、薄膜形成時のガス圧
を低くすることか挙げられる。また、特にＹＢＣＯ系の
酸化物超電導体の場合、薄膜中に酸素をより多く取り込
んだ方か高いＪｃ、Ｔｃのものが得られる。この観点か
らは成膜中の酸素を含む反応ガスのガス圧は高い方か好
ましい。本発明は上記の点に着目し、研究を重ねた結果
確立したものである。In order to grow a single layer of oxide superconductor over the entire surface of the substrate, it is better to have the surface free energy of the substrate, whichever is larger.
In other words, the higher the energy of the atoms constituting the thin film, the better. An effective means of increasing the energy of the atoms constituting the thin film is to lower the gas pressure during thin film formation. Moreover, especially in the case of YBCO-based oxide superconductors, higher Jc and Tc can be obtained by incorporating more oxygen into the thin film. From this point of view, it is preferable that the gas pressure of the oxygen-containing reactive gas during film formation be high. The present invention was established as a result of repeated research focusing on the above points.
（発明の構成）
すなわち、本発明は、基板上に超電導体薄膜を気相法で
堆積させる方法において、成膜初期段階は膜成長時の反
応ガス圧より低いガス圧にて膜成長させることを特徴と
する超電導導体の作製方法である。(Structure of the Invention) That is, the present invention provides a method for depositing a superconductor thin film on a substrate by a vapor phase method, in which the film is grown at a gas pressure lower than the reaction gas pressure during film growth in the initial stage of film formation. This is a method for producing a characteristic superconducting conductor.
ここで、超電導体材料としては、ＹＢ ａ ＣｕＯ系、
Ｂ１５ｒＣａＣｕＯ系のような酸化物超電導体材料が挙
げられる。Here, as the superconductor material, YB a CuO system,
Examples include oxide superconductor materials such as B15rCaCuO.
成膜初期段階での反応ガス圧は、適性な成膜ガス圧の約
１／３以上該適性な成膜ガス圧の範囲内となるように設
定することが好ましい。これは、成膜初期段階での反応
ガス圧が適性な成膜ガス圧の約１／３未満であると得ら
れる超電導体薄膜の組成にずれ等か生じるためである。The reaction gas pressure at the initial stage of film formation is preferably set to be within the range of about 1/3 or more of the appropriate film formation gas pressure. This is because if the reaction gas pressure at the initial stage of film formation is less than about 1/3 of the appropriate film forming gas pressure, a deviation in the composition of the obtained superconductor thin film will occur.
成膜初期段階とは、膜厚か５０ｎａ＋以下の状態を指す
。この成膜初期段階における膜厚が５０ｎαを超えると
結晶核か生成の段階を過ぎて結晶成長に至りこれか支配
的になるからである。The initial stage of film formation refers to a state where the film thickness is 50 na+ or less. This is because if the film thickness at this initial stage of film formation exceeds 50 nα, the stage of crystal nucleation will pass and crystal growth will occur, which will become dominant.
基板の材料としては、ハステロイ等のような金属基板か
用いられる。このとき、第１図および第２図に示すよう
に、テープ状体のように基板の厚みが薄い可撓性を有す
る基板１を用いてもよい。As the material of the substrate, a metal substrate such as Hastelloy is used. At this time, as shown in FIGS. 1 and 2, a thin flexible substrate 1 such as a tape-shaped substrate may be used.
また、基板］の上にバッファ層２としてＹ２Ｏ３を添加
したＺｒＯ２（イツトリア安定化ジルコニア、以下、Ｙ
ＳＺと呼ぶ）等を設けたものも用いられる。In addition, ZrO2 (yttria stabilized zirconia, hereinafter referred to as Y
SZ) etc. are also used.
［作用］
本発明の超電導導体の作製方法は、成膜初期段階におい
て薄膜成長の際に使用されるガス圧よりも低いガス圧で
基板全面に超電導体材料からなる単層を設けた後、ガス
圧を通常の圧力に戻して単層上に超電導体材料からなる
薄膜を成長させるものである。[Function] In the method for producing a superconducting conductor of the present invention, a single layer made of a superconducting material is provided on the entire surface of a substrate at a gas pressure lower than that used during thin film growth in the initial stage of film formation, and then a gas The pressure is returned to normal pressure and a thin film of superconductor material is grown on the monolayer.
基板上に成膜初期段階において薄膜成長の際に使用され
るガス圧よりも低いガス圧で超電導体材料からなる単層
を設けることにより、薄膜構成原子の表面自由エネルギ
ーを大きくすることができる。このため、この単層上に
通常のガス圧で成長させた超電導体薄膜は緻密になる。By providing a single layer made of a superconductor material on a substrate at a gas pressure lower than that used during thin film growth in the initial stage of film formation, the surface free energy of the atoms forming the thin film can be increased. Therefore, a superconductor thin film grown on this single layer at normal gas pressure becomes dense.
その結果、高いＪｃを有する超電導体材料からなる薄膜
を得ることかできる。As a result, a thin film made of a superconductor material having a high Jc can be obtained.
［実施例］ 本発明の実施例を具体的に説明する。[Example] Examples of the present invention will be specifically described.
実施例１
まず、鏡面研磨処理を施したハステロイ基板上にＲＦマ
グネトロンスパッタリング法によりＹＳＺをバッファ層
として厚さ５００ ｎｍて形成した。Example 1 First, YSZ was formed as a buffer layer to a thickness of 500 nm by RF magnetron sputtering on a mirror-polished Hastelloy substrate.
このとき、ＲＦスパッタリングの条件は、基板温度２５
０℃、Ａｒガス圧３ ＩＩＴｏｒｒＳＲＦ印加電力２０
０Ｗであり、ターゲットとしてＹ２Ｏ，を８ ｍｏ１％
添加したＺｒＯ２の焼結体ターゲットを使用した。At this time, the conditions for RF sputtering are that the substrate temperature is 25
0°C, Ar gas pressure 3, IITorrSRF applied power 20
0W, 8 mo1% Y2O as the target
A sintered target with added ZrO2 was used.
次いて、ＹＳＺ層を形成したハステロイ基板を多元制御
真空蒸着装置に設置し、該バッファ層の上に厚さ３００
ｎｉのＹ Ｂ ａ ２ Ｃｕ ３０７−Ｘ （以下
、ＹＢＣＯと呼ぶ）超電導体薄膜を蒸着した。この蒸着
は、次のようにして行った。基板をあらかじめ７００℃
に加熱し、一方それぞれの容器に収容すｔＬｔ：Ｙ、
Ｂ ａ、 Ｃｕの各金属にそれぞれ電子線を照射して加
熱蒸発させた。このとき、各金属の蒸発速度は、基板上
で理想の組成になるように水晶式膜厚計により制御した
。形成する超電導体に酸素を有効に取りこませるために
、基板近傍に局所的に酸素ガスを吹き付けて基板近傍を
高酸素圧になるようにした。超電導体薄膜の形成は、最
初の２５ｎ信を形成する際の酸素圧を３ Ｘ １０−’
Ｔｏｒｒ、後の２７５ｒｖを形成する際の酸素圧を５×
１０Ｔｏｒｒとした。このようにして、ＹＢＣＯ／ＹＳ
Ｚ／ハステロイの構造の実施例１の導体を作製した。Next, the Hastelloy substrate on which the YSZ layer was formed was placed in a multi-control vacuum evaporation apparatus, and a 300 mm thick layer was deposited on the buffer layer.
A YB a 2 Cu 307-X (hereinafter referred to as YBCO) superconductor thin film of ni was deposited. This vapor deposition was performed as follows. Preheat the substrate to 700℃
tLt:Y,
Each of the metals Ba and Cu was irradiated with an electron beam and heated to evaporate. At this time, the evaporation rate of each metal was controlled using a quartz crystal film thickness meter so that an ideal composition was obtained on the substrate. In order to effectively incorporate oxygen into the superconductor to be formed, oxygen gas was locally blown near the substrate to create a high oxygen pressure near the substrate. The superconductor thin film is formed by reducing the oxygen pressure during the formation of the first 25 nm to 3 x 10-'
Torr, the oxygen pressure when forming the later 275rv is 5x
It was set to 10 Torr. In this way, YBCO/YS
A conductor of Example 1 having a Z/Hastelloy structure was produced.
実施例２
実施例１と同様にしてハステロイ基板上に７８２層を形
成した。次に、７８２層を形成したハステロイ基板上に
ＲＦマグネトロンスパッタリング法により厚さ３００
ｒｖのＹＢＣＯ薄膜を形成した。このとき、ＲＦスパッ
タリングの条件は、基板温度６８０℃、混合ガス比Ａｒ
１０２−１／１、印加電力２００Ｗてあり、ターゲット
としてＹＢａ２Ｃｕ、ＯＸターゲットを使用した。Example 2 In the same manner as in Example 1, 782 layers were formed on a Hastelloy substrate. Next, on the Hastelloy substrate on which 782 layers were formed, a thickness of 300 mm was applied by RF magnetron sputtering method.
A YBCO thin film of rv was formed. At this time, the conditions for RF sputtering were: substrate temperature 680°C, mixed gas ratio Ar
102-1/1, the applied power was 200 W, and YBa2Cu and OX targets were used as targets.
超電導体薄膜の形成は、最初の２５ｎｉを形成する際の
Ａ ｒ ／ ０２混合ガス全圧を５０ ｍＴｏｒｒｓ
後の２７５ ｎｍを形成する際のＡ「１０□混合ガス全
圧を１６０ １ａＴｏｒｒとした。このようにして、Ｙ
ＢＣＯ／ＹＳＺ／ハステロイの構造の実施例２の導体を
作製した。比較例Ｉ
ＹＢＣＯ薄膜形成時の酸素圧を３ Ｘ １０ ””Ｔｏ
ｒｒ一定として３００ ｎｍのＹＢＣＯ薄膜を形成した
以外は、実施例１と同様にしてＹＢＣＯ／ＹＳＺ／ハス
テロイの構造の比較例１の導体を作製した。The superconductor thin film was formed by reducing the total pressure of Ar/02 mixed gas to 50 mTorrs when forming the first 25ni.
When forming the 275 nm layer, the total pressure of the mixed gas was set at 160 1 Torr.
A conductor of Example 2 having a BCO/YSZ/Hastelloy structure was produced. Comparative Example I Oxygen pressure during YBCO thin film formation was 3 x 10""To
A conductor of Comparative Example 1 having a structure of YBCO/YSZ/Hastelloy was produced in the same manner as in Example 1 except that a YBCO thin film of 300 nm was formed with rr constant.
比較例２
ＹＢＣＯ薄膜形成時の酸素圧を５ Ｘ ］−０−’Ｔｏ
ｒｒ一定として３００ｎ１ＢのＹＢＣＯ薄膜を形成した
以外は、実施例１と同様にしてＹＢＣＯ／ＹＳＺ／ハス
テロイの構造の比較例２の導体を作製した。Comparative Example 2 Oxygen pressure during YBCO thin film formation was set to 5X]-0-'To
A conductor of Comparative Example 2 having a structure of YBCO/YSZ/Hastelloy was produced in the same manner as in Example 1 except that a YBCO thin film of 300 n1B was formed with rr constant.
比較例３
ＹＢＣＯ薄膜形成において、薄膜の最初の１、 ＯＯｎ
ｉを形成する際の酸素圧を３ Ｘ １０−４Ｔｏｒｒ、
後の２００ ｎｍを形成する際の酸素圧を５×１０Ｔｏ
ｒｒとしたこと以外は、実施例１と同様にしてＹＢＣＯ
／ＹＳＺ／ハステロイの構造の比較例３の導体を作製し
た。Comparative Example 3 In YBCO thin film formation, the first 1 of the thin film, OOn
The oxygen pressure when forming i is 3 X 10-4 Torr,
The oxygen pressure when forming the next 200 nm was set to 5×10To.
YBCO was prepared in the same manner as in Example 1 except that rr was used.
A conductor of Comparative Example 3 having a structure of /YSZ/Hastelloy was produced.
得られた実施例１，２、比較例１〜３の導体にそれぞれ
金電極を取り付けた後、直流４端子法によりそれそ°れ
の導体のＴｃおよびＪｃを測定した。A gold electrode was attached to each of the conductors of Examples 1 and 2 and Comparative Examples 1 to 3 obtained, and then Tc and Jc of each conductor were measured by a DC four-terminal method.
その結果を下記第１表に示す。The results are shown in Table 1 below.
第 １ 表
第１表から明らかなように、
本発明の方法によ
り得られた超電導導体（実施例１．２）は、非常に高い
Ｊｃを示した。これに対し、比較例１の超電導導体は、
酸素取り込みが不充分でありＴｃが低かった。また、比
較例２の超電導導体は、形成された薄膜か緻密でないの
でＪｃが著しく低かった。また、本発明の範囲外の厚さ
で単層を形成した超電導導体（比較例３）もＪｃが著し
く低がった。Table 1 As is clear from Table 1, the superconducting conductor (Example 1.2) obtained by the method of the present invention showed a very high Jc. On the other hand, the superconducting conductor of Comparative Example 1 is
Oxygen uptake was insufficient and Tc was low. In addition, the superconducting conductor of Comparative Example 2 had a significantly low Jc because the formed thin film was not dense. Furthermore, the superconducting conductor (Comparative Example 3) in which a single layer was formed with a thickness outside the range of the present invention also had a significantly lower Jc.
［発明の効果］
以上説明した如く、本発明の超電導導体の作製方法によ
れば、可撓性金属基板やバッファ層上に高いＪｃを持つ
酸化物超電導体層を作製できる。[Effects of the Invention] As explained above, according to the method for producing a superconducting conductor of the present invention, an oxide superconductor layer having a high Jc can be produced on a flexible metal substrate or a buffer layer.
第１図は本発明の方法により得られた超電導導体の一実
施例を示す説明図、第２図は本発明の方法により得られ
た超電導導体の他の実施例を示す説明図である。
１・・・超電導導体層、２・・・バッファ層、３・・可
撓性基板。
出願人代理人 弁理士 鈴江武彦FIG. 1 is an explanatory diagram showing one embodiment of a superconducting conductor obtained by the method of the present invention, and FIG. 2 is an explanatory diagram showing another embodiment of a superconducting conductor obtained by the method of the present invention. 1... Superconducting conductor layer, 2... Buffer layer, 3... Flexible substrate. Applicant's agent Patent attorney Takehiko Suzue
Claims (1)
いて、成膜初期段階は膜成長時の反応ガス圧より低いガ
ス圧にて膜成長させることを特徴とする超電導導体の作
製方法。A method for producing a superconducting conductor, which is characterized in that a superconducting thin film is deposited on a substrate by a vapor phase method, and the film is grown at a gas pressure lower than the reaction gas pressure during film growth in the initial stage of film formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2273263A JPH04149008A (en) | 1990-10-15 | 1990-10-15 | Production of superconducting material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2273263A JPH04149008A (en) | 1990-10-15 | 1990-10-15 | Production of superconducting material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04149008A true JPH04149008A (en) | 1992-05-22 |
Family
ID=17525397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2273263A Pending JPH04149008A (en) | 1990-10-15 | 1990-10-15 | Production of superconducting material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04149008A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004158448A (en) * | 2002-10-23 | 2004-06-03 | Nexans Superconductors Gmbh | Superconducting cable conductor having rebco-coated conductor element |
-
1990
- 1990-10-15 JP JP2273263A patent/JPH04149008A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004158448A (en) * | 2002-10-23 | 2004-06-03 | Nexans Superconductors Gmbh | Superconducting cable conductor having rebco-coated conductor element |
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