JPH04116125U - semiconductor manufacturing equipment - Google Patents
semiconductor manufacturing equipmentInfo
- Publication number
- JPH04116125U JPH04116125U JP1956191U JP1956191U JPH04116125U JP H04116125 U JPH04116125 U JP H04116125U JP 1956191 U JP1956191 U JP 1956191U JP 1956191 U JP1956191 U JP 1956191U JP H04116125 U JPH04116125 U JP H04116125U
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- Prior art keywords
- chamber
- door
- carry
- adjustment
- processing
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 59
- 238000004891 communication Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims description 18
- 230000007547 defect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000000428 dust Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 簡単な構造で、製品不良発生の原因である各
室の間の圧力差の発生を解消し、圧力計の読取り誤差や
経時変化の影響を排除して、処理時間の短縮化を可能と
した半導体製造装置を提供する
【構成】 被処理物の供給扉１を備えた搬入調整室Ａ
と、被処理物を処理する処理室Ｂと、被処理物の取出扉
４を備えた搬出調整室Ｃとを、密閉可能な搬入扉２と搬
出扉３を介して隣接して配置する。各室Ａ〜Ｃに真空ポ
ンプ６，１１を接続する。搬入調整室Ａと処理室Ｂとを
バルブ３１を有する連通配管３２で接続すると共に、処
理室Ｂと搬出調整室Ｃとをバルブ３３を有する連通配管
３４で接続する。隣接する室内の圧力を同一とする場合
には、バルブ３１，３３を開いて両室内を連通配管３
２，３４で連通させることにより、特に各室内の圧力を
監視していなくても、両室内の圧力を同一にすることが
できる。
(57) [Summary] [Purpose] With a simple structure, it eliminates the pressure difference between each chamber, which is a cause of product defects, and eliminates the effects of pressure gauge reading errors and changes over time. Provides semiconductor manufacturing equipment that enables time reduction [Structure] Carrying-in adjustment room A equipped with a supply door 1 for objects to be processed
A processing chamber B for processing objects to be processed and a carry-out adjustment chamber C equipped with a door 4 for taking out objects to be processed are arranged adjacent to each other via a sealable carry-in door 2 and carry-out door 3. Vacuum pumps 6 and 11 are connected to each chamber A to C. The carry-in adjustment chamber A and the processing chamber B are connected by a communication pipe 32 having a valve 31, and the process chamber B and the carry-out adjustment chamber C are connected by a communication pipe 34 having a valve 33. If the pressures in adjacent chambers are to be the same, open the valves 31 and 33 to connect the two chambers to the communication pipe 3.
2 and 34, it is possible to make the pressures in both chambers the same even if the pressures in each chamber are not particularly monitored.
Description
【０００１】0001
本考案は、密閉状態において表面処理その他の処理を行うための半導体製造装 置に関する。 This invention is a semiconductor manufacturing equipment for performing surface treatment and other processing in a sealed state. Regarding the location.
【０００２】0002
従来、ＩＣ等の半導体の製造装置においては、エッチングその他の処理を気体 を使用して行っている。この場合、使用される気体が外部に漏洩することを防止 したり、半導体の特性を確保するために一定の雰囲気が要求されることから、こ れらの処理は密閉された処理室で行われる。すなわち、通常は、被処理物を処理 室内に供給した後、処理室を密閉し、室内を真空ポンプで真空状態として、そこ に処理に必要とする気体を送り込んでいる。 Conventionally, in manufacturing equipment for semiconductors such as ICs, etching and other processes are performed using gas. This is done using . In this case, prevent the gas used from leaking to the outside. This is because a certain atmosphere is required to maintain the properties of the semiconductor. These processes are performed in a closed processing chamber. In other words, usually the workpiece is After supplying it to the room, the processing chamber is sealed, and the room is evacuated using a vacuum pump. The gas needed for processing is sent to the
【０００３】 この場合、被処理物を大気中から直接処理室内に送り込むと、 （ａ）処理室の真空度を大気から急激に上げることになりポンプの負担が多い、 （ｂ）処理室の開閉時に大気中の塵埃が混入する、 （ｃ）被処理物の取り出し時に内部の処理気体が大気中に漏洩する、 などの問題がある。そのため、通常は、処理室の前後に、密閉可能で真空ポンプ を接続した搬入調整室と搬出調整室を設けて、処理室に直接大気が流入しないよ うにしている。0003 In this case, if the material to be processed is sent directly into the processing chamber from the atmosphere, (a) The degree of vacuum in the processing chamber will be raised rapidly from the atmosphere, which will place a heavy burden on the pump. (b) Dust from the atmosphere gets mixed in when the processing chamber is opened and closed; (c) Internal processing gas leaks into the atmosphere when taking out the object to be processed. There are problems such as. Therefore, sealable vacuum pumps are usually installed before and after the processing chamber. A carry-in control room and a carry-out control room are connected to prevent air from directly entering the processing room. I'm doing it.
【０００４】 図２は、このような半導体半導体製造装置の従来技術の一例を示すものである 。図において、被処理物の供給扉１を備えた搬入調整室Ａと、被処理物を処理す る処理室Ｂと、被処理物の取出扉４を備えた搬出調整室Ｃとが、密閉可能な搬入 扉２と搬出扉３を介して隣接して配置されている。0004 FIG. 2 shows an example of the conventional technology of such semiconductor manufacturing equipment. . In the figure, there is a carry-in adjustment room A equipped with a supply door 1 for materials to be processed, and a door for processing materials to be processed. The processing chamber B is equipped with a processing chamber B, and the unloading adjustment chamber C is equipped with a door 4 for taking out the processed material. They are arranged adjacent to each other with a door 2 and a carry-out door 3 in between.
【０００５】 このうち搬入調整室Ａには、バルブ５を介して真空ポンプ６が、バルブ７及び 流量調整弁８を介して不活性ガス供給装置９が接続されている。処理室Ｂには、 バルブ１０を介して真空ポンプ１１が、バルブ１２及び流量調整弁１３を介して 不活性ガス供給装置１４が接続されている。搬出調整室Ｃには、バルブ１５を介 して真空ポンプ６が、バルブ１６及び流量調整弁１７を介して不活性ガス供給装 置９が接続されている。[0005] Of these, a vacuum pump 6 is connected to the carry-in adjustment chamber A via a valve 5, and a valve 7 and An inert gas supply device 9 is connected via a flow rate regulating valve 8 . In processing room B, Vacuum pump 11 via valve 10, via valve 12 and flow rate adjustment valve 13 An inert gas supply device 14 is connected. A valve 15 is connected to the unloading adjustment chamber C. The vacuum pump 6 is connected to an inert gas supply system via a valve 16 and a flow rate adjustment valve 17. 9 is connected.
【０００６】 更に、搬入調整室Ａと搬出調整室Ｃには、不活性ガスの充填時に、その内部の 空気を大気に排出するために、バルブ１８，１９を備えた配管が接続されている 。[0006] Furthermore, when filling the carry-in adjustment chamber A and the carry-out control chamber C with inert gas, A pipe with valves 18, 19 is connected to exhaust the air to the atmosphere. .
【０００７】 なお、図示しないが、この半導体装置には、各室内に被処理物を搬入・搬出す るための装置が設けられている。これらの装置は、装置からの発塵などを考慮し て、通常処理室Ｂを避けて搬入調整室Ａ及び搬出調整室Ｃに設けられる。また、 この従来技術では、処理室Ｂが一つしか表示されていないが、複数の処理室を搬 入扉２と搬出扉３を介して連続的に設ける場合もある。[0007] Although not shown, this semiconductor device has a system for carrying in and out processing objects into each chamber. Equipment is provided for this purpose. These devices are designed in consideration of dust generation etc. Therefore, they are provided in the carry-in adjustment room A and the carry-out adjustment room C, avoiding the normal processing room B. Also, In this conventional technology, only one processing chamber B is displayed, but multiple processing chambers are transported. In some cases, the entrance door 2 and the exit door 3 are provided continuously.
【０００８】 このような従来の半導体装置において、被処理物の処理はおよそ次のように行 われる。[0008] In such conventional semiconductor devices, the processing of the object to be processed is approximately performed as follows. be exposed.
【０００９】 （１）被処理物としての半導体用の材料が、運搬用容器に収納された状態で、例 えば、搬入調整室Ａに設けられた搬入機構により、供給扉１より搬入調整室Ａ内 に供給される。このとき搬入調整室Ａと処理室Ｂとの間の搬入扉２、及び処理室 Ｂと搬出調整室Ｃとの間の搬出扉３は閉じられており、処理室Ｂと搬出調整室Ｃ とは、不活性ガス供給装置９，１４からの不活性ガスが充填されている。[0009] (1) Semiconductor materials as processing objects are stored in transportation containers, for example. For example, a carry-in mechanism installed in the carry-in adjustment room A allows the inside of the carry-in adjustment room A to be opened from the supply door 1. supplied to At this time, the loading door 2 between the loading adjustment room A and the processing chamber B, and the processing chamber The carry-out door 3 between B and carry-out adjustment room C is closed, and the carry-out door 3 between processing chamber B and carry-out adjustment room C is closed. is filled with inert gas from the inert gas supply devices 9 and 14.
【００１０】 （２）搬入調整室Ａに被処理物が収納されると、供給扉１が閉じられ、搬入調整 室Ａ内に不活性ガス供給装置９からの不活性ガスが充填される。このとき、被処 理物と共に搬入調整室Ａ内に流入した空気は、バルブ１８を開放した配管から大 気中に排出され、不活性ガスと置換される。その後、バルブ１８を閉じ、真空真 空ポンプ６により搬入調整室Ａの気圧を、予め設定されている処理室Ｂの気圧と 同じまで減圧する。0010 (2) When the workpiece is stored in the carry-in adjustment room A, the supply door 1 is closed and the carry-in adjustment room The chamber A is filled with inert gas from the inert gas supply device 9. At this time, the victim The air that flowed into the carry-in adjustment room A together with the physical objects was discharged from the piping with the valve 18 opened. Exhausted into the air and replaced with inert gas. After that, close the valve 18 and turn on the vacuum. The air pump 6 adjusts the atmospheric pressure in the loading adjustment chamber A to the preset atmospheric pressure in the processing chamber B. Reduce pressure to the same level.
【００１１】 （３）所定の圧力まで減圧が完了したら、搬入調整室Ａと処理室Ｂとの間の搬入 扉２を開き、例えば搬入調整室Ａの搬入機構により被処理物を処理室Ｂに搬入し 、処理室Ｂ内の台に載置する。その後、搬入装置を処理室Ｂより退避させ、搬入 扉２を閉じる。[0011] (3) Once the pressure has been reduced to the predetermined pressure, the transport between the transport adjustment room A and the processing room B is carried out. The door 2 is opened, and the material to be processed is carried into the processing chamber B using the carrying mechanism of the carrying adjustment chamber A, for example. , placed on a table in processing chamber B. After that, the loading device is evacuated from processing room B, and the loading device is Close door 2.
【００１２】 （４）搬入扉２を閉じた処理室Ｂ内には各種の処理気体を供給し、エッチングそ の他所定の処理を被処理物に施す。0012 (4) Various processing gases are supplied into the processing chamber B with the loading door 2 closed, and the etching process is performed. In addition to this, predetermined treatments are performed on the object to be treated.
【００１３】 （５）この処理の間に、搬出調整室Ｃの内部に不活性ガス供給装置９からの不活 性ガスを充填し、更にこの搬出調整室Ｃ内部の圧力を真空ポンプ６により処理室 Ｂの気圧と同じに減圧しておく。なお、不活性ガスの充填時に、バルブ１９を開 いて搬出調整室Ｃ内の空気を大気中に排出しながら、不活性ガスで置換するのは 、搬入調整室Ａへの被処理物の搬入時と同じである。[0013] (5) During this process, inert gas is supplied from the inert gas supply device 9 to the inside of the unloading adjustment chamber C. The pressure inside the discharge adjustment chamber C is increased by the vacuum pump 6 to the processing chamber. Reduce the pressure to the same pressure as B. Note that the valve 19 should not be opened when filling with inert gas. To replace the air in the unloading adjustment room C with inert gas while exhausting it to the atmosphere, , is the same as when carrying the workpiece into the carrying-in adjustment room A.
【００１４】 （６）処理室Ｂ内で被処理物に対する処理が完了した後は、搬出調整室Ｃとの間 の搬出扉３を開放し、搬出調整室Ｃ内の搬出機構により、処理室Ｂの被処理物を 台上から搬出調整室Ｃに搬出し、その後搬出扉３を閉じる。[0014] (6) After the processing of the objects to be processed in processing chamber B is completed, the The unloading door 3 is opened, and the unloading mechanism in the unloading adjustment chamber C removes the workpieces from the processing chamber B. It is carried out from the table to the carrying-out adjustment room C, and then the carrying-out door 3 is closed.
【００１５】 （７）不活性ガス供給装置９からの不活性ガスにより、搬出調整室Ｃの気圧を通 常の圧力まで戻した後は、取出扉４を開放し、搬出機構により被処理物を室外に 予め置かれた運搬用容器に収納する。[0015] (7) The air pressure in the unloading adjustment chamber C is controlled by the inert gas from the inert gas supply device 9. After the pressure has returned to normal, the take-out door 4 is opened and the material to be processed is taken out of the room using the carry-out mechanism. Store in a pre-placed transport container.
【００１６】 このように処理室Ｂの前後に搬入調整室Ａと搬出調整室Ｃを設けた半導体製造 装置にあっては、処理室Ｂの前後に搬入調整室Ａ及び搬出調整室Ｃを設けたため 、処理室Ｂを直接大気に触れさせることがなく、前記（ａ）〜（ｃ）のような要 望を満足することができる。[0016] Semiconductor manufacturing in which a loading adjustment chamber A and an unloading adjusting chamber C are provided before and after the processing chamber B in this way The equipment has a loading adjustment room A and an unloading adjustment room C before and after the processing room B. , processing chamber B is not exposed to the atmosphere directly, and requirements such as (a) to (c) above are met. You can satisfy your wishes.
【００１７】[0017]
ところで、このような半導体装置においては、処理室Ｂとその前後の搬入調整 室Ａ及び搬出調整室Ｃとの間で被処理物を搬送する際の搬入扉２及び搬出扉３の 開閉時に、開放される扉の両側の室の圧力差が無いことが望ましい。そのため、 従来では、各室ごとに高精度の圧力計を装着し、その気圧を常時監視して、被処 理物の搬送時に各室の圧力が同じになるようにしていた。 By the way, in such a semiconductor device, there is a The carry-in door 2 and the carry-out door 3 when transporting the processed material between the chamber A and the carry-out adjustment room C. It is desirable that there is no pressure difference between the chambers on both sides of the door when it is opened or closed. Therefore, Conventionally, a high-precision pressure gauge was installed in each room, and the atmospheric pressure was constantly monitored. The pressure in each chamber was made to be the same when transporting physical objects.
【００１８】 しかし、各室の圧力を圧力計で監視して、同圧力と判断した場合でも、現実に は、圧力計そのものの誤差や監視者の読取り誤差、或いは長期の使用による圧力 計の計測能力の変化などにより、調整室Ｃと搬入調整室Ａや搬出調整室Ｃとの間 に多少とも圧力差が生じることは避けられなかった。[0018] However, even if you monitor the pressure in each chamber with a pressure gauge and determine that the pressure is the same, This is due to errors in the pressure gauge itself, reading errors by the monitor, or pressure caused by long-term use. Due to changes in the measurement ability of the meter, etc., the difference between the control room C and the carry-in control room A or the carry-out control room C. It was inevitable that some pressure difference would occur.
【００１９】 そして、このような圧力差が存在すると、搬入扉２や搬出扉３を開放した際に 、特にその開放開始時に、狭い隙間の開口部より圧力の高い室から低い室に向か って気体の流れが生じる。この気流は、処理工程や機器の稼動時に発生する微細 な塵を巻き上げることになり、被処理物にこの塵が付着したり、処理室中に浮遊 すると、半導体の不良の原因となる。[0019] If such a pressure difference exists, when the loading door 2 or the loading door 3 is opened, , especially at the beginning of its opening, from the higher pressure chamber to the lower pressure chamber than the narrow gap opening. A gas flow occurs. This airflow is caused by minute particles generated during processing processes and equipment operation. This will cause dust to be stirred up, and this dust may adhere to the objects to be processed or become airborne in the processing chamber. This may cause semiconductor defects.
【００２０】 また、完全に各室内を同じ圧力にするには、高精度の圧力計を使用して、真空 ポンプの運転を微妙に調整する必要があり、同じ圧力にするまでに長い時間が必 要となり、製造装置の生産性を低下させることになる。[0020] In addition, to ensure that each chamber has the same pressure, we use a high-precision pressure gauge to Pump operation must be adjusted slightly, and it takes a long time to achieve the same pressure. This will reduce the productivity of the manufacturing equipment.
【００２１】 本考案は、上記のような従来技術の問題点を解決し、簡単な構造で、製品不良 発生の原因である各室の間の圧力差の発生を解消し、圧力計の読取り誤差や経時 変化の影響を排除して、処理時間の短縮化を可能とした半導体製造装置を提供す ることを目的とする。[0021] This invention solves the problems of the conventional technology as mentioned above, has a simple structure, and eliminates product defects. Eliminates the pressure difference between each chamber, which is the cause of the problem, and eliminates pressure gauge reading errors and aging. We provide semiconductor manufacturing equipment that eliminates the effects of changes and reduces processing time. The porpose is to do.
【００２２】[0022]
以上の課題を解決するために、本考案は、 被処理物の供給扉を備えた搬入調整室と、被処理物を処理する処理室と、被処 理物の取出扉を備えた搬出調整室とを、密閉可能な搬入扉と搬出扉を介して隣接 して配置し、各室に真空ポンプを接続して成る半導体製造装置において、 前記搬入調整室と処理室とをバルブを有する連通配管で接続すると共に、前記 処理室と搬出調整室とをバルブを有する連通配管で接続したことを特徴とする。 In order to solve the above problems, this invention A loading adjustment room equipped with a supply door for processed materials, a processing room for processing processed materials, and a The unloading adjustment room equipped with a door to take out the physical materials is adjacent to the unloading control room through a sealable loading door and unloading door. In semiconductor manufacturing equipment, which is arranged with a vacuum pump connected to each chamber, The carry-in adjustment chamber and the processing chamber are connected by a communication pipe having a valve, and the It is characterized in that the processing chamber and the unloading adjustment chamber are connected by a communication pipe having a valve.
【００２３】[0023]
上記のような構成を有する本考案においては、各室をバルブを有する連通配管 で接続することにより、隣接する室内の圧力を同一とする場合には、バルブを開 いて両室内を連通配管で連通させることにより、特に各室内の圧力を監視してい なくても、両室内の圧力を同一にすることができる。 In the present invention having the above configuration, each chamber is connected to a communicating pipe with a valve. If you want to make the pressure in adjacent rooms the same by connecting the valves with By connecting both chambers with communication piping, the pressure inside each chamber can be monitored in particular. Even if not, the pressure in both chambers can be made the same.
【００２４】 また、各連通配管に設けたバルブを閉じることで、被処理物の搬入・搬出や処 理の各工程ごとに必要な適正圧力となるように、各室の気圧を独立して制御する ことができる。[0024] In addition, by closing the valves installed in each communication pipe, it is possible to carry in/out the materials to be treated and The air pressure in each chamber is controlled independently to maintain the appropriate pressure required for each process. be able to.
【００２５】[0025]
（１）代表的な実施例 以下、本考案の実施例を図１により具体的に説明する。なお、図２に示した従 来の半導体装置と同一の部分には同一符号を付し、説明は省略する。 (1) Typical examples Hereinafter, an embodiment of the present invention will be explained in detail with reference to FIG. Note that the subordinate shown in Figure 2 The same parts as those in the conventional semiconductor device are given the same reference numerals, and the description thereof will be omitted.
【００２６】 本実施例において、搬入調整室Ａと処理室Ｂとの間には、バルブ３１を設けた 連通配管３２が設けられ、このバルブ３１の開放時には両室の気体が連通配管３ ２を介して高圧室側から低圧室側に流通するように構成されている。[0026] In this embodiment, a valve 31 is provided between the loading adjustment chamber A and the processing chamber B. A communication pipe 32 is provided, and when this valve 31 is opened, the gas in both chambers flows into the communication pipe 3. 2, it is configured to flow from the high pressure chamber side to the low pressure chamber side.
【００２７】 また、処理室Ｂと搬出調整室Ｃの間には、バルブ３３を設けた連通配管３４が 設けられ、このバルブ３３の開放時には両室の気体が連通配管３４を介して高圧 室側から低圧室側に流通するように構成されている。[0027] Furthermore, between the processing chamber B and the unloading adjustment chamber C, there is a communication pipe 34 provided with a valve 33. When the valve 33 is opened, the gas in both chambers is brought to high pressure through the communication pipe 34. It is configured to flow from the chamber side to the low pressure chamber side.
【００２８】 このような構成を有する本実施例においては、例えば、一方の室が不活性ガス の充填時で他方がエッチングなどの処理工程時のように、各室内の圧力を独立に 設定する場合や、各室の気体が混合してはならない場合には、各連通配管３２， ３４上に設けたバルブ３１，３３を閉じて各室間の気体の移動を阻止し、各室内 の圧力を別々に制御する。[0028] In this embodiment having such a configuration, for example, one chamber is filled with inert gas. The pressure inside each chamber can be controlled independently, such as when filling the chamber and the other during processing processes such as etching. When setting, or when the gases in each chamber must not mix, each communication pipe 32, Close the valves 31 and 33 provided on the 34 to prevent the movement of gas between each chamber. control the pressure separately.
【００２９】 一方、搬入扉２や搬出扉３を開く場合に、隣接する室内の気圧を同一とするに は、バルブ３１，３３を開いて、各室を連通配管３２，３４を介して連通状態と し、高圧側の室から低圧側の室に気体を流すようにする。このようにすると、両 室内の気圧が同一となるまで、連通配管３２，３４を通って気体が流れ、特に気 圧計を監視しなくても、両室内を同一の気圧とすることができる。[0029] On the other hand, when opening the loading door 2 or the loading door 3, it is necessary to keep the air pressure in the adjacent rooms the same. opens the valves 31 and 33 to connect each chamber via the communication pipes 32 and 34. Then, the gas is allowed to flow from the high-pressure chamber to the low-pressure chamber. In this way, both Gas flows through the communication pipes 32 and 34 until the atmospheric pressure in the room becomes the same. It is possible to maintain the same atmospheric pressure in both chambers without monitoring the pressure gauge.
【００３０】 その結果、気圧計自体の誤差や読取り誤差があっても、また経時変化により気 圧計に狂いが生じても、両室内の気圧を同一にすることができ、扉の開閉時に気 流の流れが生じて、それにより塵埃が舞い上がって被処理物表面に付着すること を防止できる。[0030] As a result, even if there are errors in the barometer itself or reading errors, or due to changes over time, Even if the pressure gauge is out of order, the pressure in both rooms can be made the same, and there is no air pressure when opening or closing the door. A flow of water occurs, which causes dust to fly up and adhere to the surface of the workpiece. can be prevented.
【００３１】 しかも、本実施例は、単にバルブ付き連通配管を設けるだけで良いので、装置 自体の構造も単純化できる。また、真空ポンプの運転も容易になるので、扉の開 閉速度も向上させることができ、製造作業の容易化、迅速化の利点もある。[0031] Moreover, in this embodiment, it is sufficient to simply provide a communication pipe with a valve, so the equipment The structure itself can also be simplified. It also makes it easier to operate the vacuum pump, so you can open the door easily. Closing speed can also be improved, which has the advantage of facilitating and speeding up manufacturing operations.
【００３２】 （２）他の実施例 本考案は上記の実施例に限定されるものではなく、処理室の数や、処理室と前 後の搬入・搬出調整室との位置関係も自由に変更できる。また、図１のように専 用の連通配管やバルブを設ける代わりに、不活性ガス供給装置や真空ポンプの配 管の一部を利用してバイパスを設けることで、本考案の連通配管と他の配管を共 用することも可能である。[0032] (2) Other examples The present invention is not limited to the above-mentioned embodiments, and the number of processing chambers and the number of processing chambers and The positional relationship with the later loading/unloading adjustment room can also be changed freely. In addition, as shown in Figure 1, Instead of installing communication piping and valves for By using a part of the pipe to provide a bypass, it is possible to share the communication pipe of this invention with other pipes. It is also possible to use
【００３３】[0033]
【考案の効果】 以上の通り、本考案によれば、搬入調整室Ａと処理室Ｂ及び処理室Ｂと搬出調 整室Ｃとの間に、バルブを有する連通配管を設けるというきわめて簡単な構造に もかかわらず、半導体製造装置の処理室とその前後の各調整室との間の圧力調整 を容易かつ迅速に行うことができ、塵埃を室内に舞い上げることがなく、半導体 不良の発生を効果的に防止した半導体製造装置を提供することが可能になる。[Effect of the idea] As described above, according to the present invention, the loading adjustment room A, the processing chamber B, the processing room B and the unloading adjustment room The structure is extremely simple, with a connecting pipe with a valve installed between it and the control room C. However, pressure adjustment between the processing chamber of semiconductor manufacturing equipment and each adjustment chamber before and after it can be carried out easily and quickly, without raising dust indoors, and It becomes possible to provide a semiconductor manufacturing device that effectively prevents the occurrence of defects.
【図１】本考案の半導体製造装置の一実施例を示す配管
図。FIG. 1 is a piping diagram showing an embodiment of the semiconductor manufacturing apparatus of the present invention.
【図２】従来の半導体製造装置の一例を示す配管図。FIG. 2 is a piping diagram showing an example of a conventional semiconductor manufacturing apparatus.
Ａ…搬入調整室 Ｂ…処理室 Ｃ…搬出調整室 １…供給扉 ２…搬入扉 ３…搬出扉 ４…取出扉 ６，１１…真空ポンプ ９，１４…不活性ガス供給装置 ３１，３３…バルブ ３２，３４…連通配管 A... Loading adjustment room B...Processing room C...Export adjustment room 1...Supply door 2... Loading door 3...Export door 4...Take-out door 6,11...Vacuum pump 9,14...Inert gas supply device 31, 33...Valve 32, 34...Communication piping
Claims (2)
被処理物を処理する処理室と、被処理物の取出扉を備え
た搬出調整室とを、密閉可能な搬入扉と搬出扉を介して
隣接して配置し、各室に真空ポンプを接続して成る半導
体製造装置において、前記搬入調整室と処理室とをバル
ブを有する連通配管で接続すると共に、前記処理室と搬
出調整室とをバルブを有する連通配管で接続したことを
特徴とする半導体製造装置。Claim 1: A carry-in adjustment room equipped with a supply door for objects to be processed;
A processing chamber for processing the objects to be processed and an unloading adjustment chamber equipped with a door for taking out the objects to be processed are arranged adjacent to each other via a sealable loading door and an unloading door, and a vacuum pump is connected to each chamber. A semiconductor manufacturing apparatus comprising: a semiconductor manufacturing apparatus, characterized in that the carry-in adjustment chamber and the processing chamber are connected by a communication pipe having a valve, and the process chamber and the carry-out control chamber are connected by a communication pipe having a valve. Device.
いる請求項１の半導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein each chamber is connected to an inert gas supply device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991019561U JPH085545Y2 (en) | 1991-03-29 | 1991-03-29 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991019561U JPH085545Y2 (en) | 1991-03-29 | 1991-03-29 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04116125U true JPH04116125U (en) | 1992-10-16 |
| JPH085545Y2 JPH085545Y2 (en) | 1996-02-14 |
Family
ID=31905820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991019561U Expired - Lifetime JPH085545Y2 (en) | 1991-03-29 | 1991-03-29 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH085545Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010067992A (en) * | 2003-06-02 | 2010-03-25 | Tokyo Electron Ltd | Substrate processing apparatus and substrate transfer method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231816A (en) * | 1983-06-15 | 1984-12-26 | Hitachi Ltd | Dry-etching apparatus |
| JPS6119294A (en) * | 1984-07-05 | 1986-01-28 | Nec Corp | Selection system of pilot number group circuit |
| JPS61291032A (en) * | 1985-06-17 | 1986-12-20 | Fujitsu Ltd | Vacuum apparatus |
| JPS61296710A (en) * | 1985-06-25 | 1986-12-27 | Kanegafuchi Chem Ind Co Ltd | Manufacture of amorphous silicon system semiconductor |
| JPH01108373A (en) * | 1987-09-18 | 1989-04-25 | Leybold Ag | Apparatus for coating base plate |
| JPH04276074A (en) * | 1991-03-05 | 1992-10-01 | Fujitsu Ltd | Vacuum treatment equipment |
-
1991
- 1991-03-29 JP JP1991019561U patent/JPH085545Y2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231816A (en) * | 1983-06-15 | 1984-12-26 | Hitachi Ltd | Dry-etching apparatus |
| JPS6119294A (en) * | 1984-07-05 | 1986-01-28 | Nec Corp | Selection system of pilot number group circuit |
| JPS61291032A (en) * | 1985-06-17 | 1986-12-20 | Fujitsu Ltd | Vacuum apparatus |
| JPS61296710A (en) * | 1985-06-25 | 1986-12-27 | Kanegafuchi Chem Ind Co Ltd | Manufacture of amorphous silicon system semiconductor |
| JPH01108373A (en) * | 1987-09-18 | 1989-04-25 | Leybold Ag | Apparatus for coating base plate |
| JPH04276074A (en) * | 1991-03-05 | 1992-10-01 | Fujitsu Ltd | Vacuum treatment equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010067992A (en) * | 2003-06-02 | 2010-03-25 | Tokyo Electron Ltd | Substrate processing apparatus and substrate transfer method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH085545Y2 (en) | 1996-02-14 |
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