JPH04280625A - Gas control device for load lock chamber of vertical type difusion cvd device - Google Patents
Gas control device for load lock chamber of vertical type difusion cvd deviceInfo
- Publication number
- JPH04280625A JPH04280625A JP6916491A JP6916491A JPH04280625A JP H04280625 A JPH04280625 A JP H04280625A JP 6916491 A JP6916491 A JP 6916491A JP 6916491 A JP6916491 A JP 6916491A JP H04280625 A JPH04280625 A JP H04280625A
- Authority
- JP
- Japan
- Prior art keywords
- lock chamber
- load lock
- nitrogen gas
- valve
- oxygen concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 26
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 26
- 238000000034 method Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 19
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体製造装置の１つ
である縦型拡散ＣＶＤ装置に設けられるロードロック室
のガスコントロールの改善に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in gas control in a load lock chamber provided in a vertical diffusion CVD apparatus, which is one type of semiconductor manufacturing apparatus.
【０００２】0002
【従来の技術】縦型拡散ＣＶＤ装置は、垂直に設けられ
た石英管からなる気密な反応室と、該反応室を囲繞して
設けられたヒータと、前記反応室の下方に連設して設け
られる気密なロードロック室と、該ロードロック室の内
部に設けられるウェーハ装入機構、ウェーハ移載機構、
前記ウェーハ装入機構に載置されウェーハが多段に装填
されるボート等から構成される。[Prior Art] A vertical diffusion CVD apparatus has an airtight reaction chamber made of a vertically installed quartz tube, a heater surrounding the reaction chamber, and a heater connected below the reaction chamber. An airtight load lock chamber provided, a wafer loading mechanism, a wafer transfer mechanism provided inside the load lock chamber,
It is composed of a boat or the like that is placed on the wafer loading mechanism and wafers are loaded in multiple stages.
【０００３】ウェーハの処理は、前記ロードロック室に
搬入されたウェーハをウェーハ移載機構によって前記ボ
ートに装填し、該ボートを前記ウェーハ装入機構で反応
室内部に装入し、高温反応ガス雰囲気でウェーハの処理
を行い、ウェーハの処理が完了すると前記ウェーハ装入
機構でボートをロードロック室に引出し、更に前記ウェ
ーハ移載機構によって、ウェーハがボートより取出され
る。[0003] Wafer processing is carried out by loading the wafers carried into the load lock chamber into the boat by the wafer transfer mechanism, loading the boat into the reaction chamber by the wafer loading mechanism, and placing the wafer in a high temperature reaction gas atmosphere. When the wafers are processed, the wafer loading mechanism pulls out the boat into the load lock chamber, and the wafer transfer mechanism takes out the wafers from the boat.
【０００４】上記した一連のウェーハ処理に於いて、ロ
ードロック室はウェーハの酸化防止の為、或はパーティ
クルによる汚染防止の為、清浄な窒素ガス（雰囲気ガス
）に保つ必要がある。[0004] In the series of wafer processing described above, the load lock chamber must be kept clean with nitrogen gas (atmosphere gas) in order to prevent oxidation of the wafers or to prevent contamination by particles.
【０００５】従来のロードロック室のガスコントロール
方法としては、図２に示すものがある。A conventional gas control method for a load lock chamber is shown in FIG.
【０００６】反応室１下方に設けられたロードロック室
２には、窒素ガス供給管３及び排気管４が接続され、該
ガス供給管３及び排気管４に真空開閉弁５，６が設けら
れていると共に該排気管４には真空ポンプ７が設けられ
ている。この従来のものでは、真空開閉弁５を閉塞した
状態で、前記真空ポンプ７でロードロック室２を真空引
し、その後窒素ガスを充填し、窒素ガス雰囲気の大気圧
にする。窒素ガスを充填後は、ロードロック室を密閉す
る。A nitrogen gas supply pipe 3 and an exhaust pipe 4 are connected to a load lock chamber 2 provided below the reaction chamber 1, and vacuum on-off valves 5 and 6 are provided in the gas supply pipe 3 and exhaust pipe 4. The exhaust pipe 4 is also provided with a vacuum pump 7. In this conventional device, the load lock chamber 2 is evacuated by the vacuum pump 7 with the vacuum shut-off valve 5 closed, and then filled with nitrogen gas to bring it to atmospheric pressure in a nitrogen gas atmosphere. After filling with nitrogen gas, seal the load lock chamber.
【０００７】又、図３に示すものでは、ロードロック室
２を真空に引くことなく、最初から窒素ガスを流し続け
、窒素ガスに置換すると共に置換後も窒素ガスを流し続
けて清浄を維持する。In addition, in the device shown in FIG. 3, the load lock chamber 2 is not evacuated, but nitrogen gas is continued to flow from the beginning, and the nitrogen gas is replaced with nitrogen gas, and the nitrogen gas is continued to flow even after the replacement to maintain cleanliness. .
【０００８】[0008]
【発明が解決しようとする課題】ところが、図２に示す
従来のものでは、ロードロック室真空時にロードロック
室に大気圧が掛かる為、ロードロック室を頑丈なものと
しなければならず、大重量大型化すると共に製作費も高
価となる。However, in the conventional device shown in FIG. 2, atmospheric pressure is applied to the load-lock chamber when the load-lock chamber is evacuated, so the load-lock chamber must be made sturdy and has a large weight. As the size increases, the production cost also increases.
【０００９】又、図３に示す従来のものでは、ロードロ
ック室を軽量化でき、ロードロック室で発生したパーテ
ィクル等を直ちに排気できるという利点はあるが、窒素
ガスを流し続ける為大量の窒素ガスを必要とし、ランニ
ングコストが高くついていた。本発明は上記実情に鑑み
、ロードロック室を軽量化すると共に窒素ガスの使用量
を大幅に低減しようとするものである。Furthermore, the conventional device shown in FIG. 3 has the advantage of being able to reduce the weight of the load-lock chamber and of immediately exhausting particles generated in the load-lock chamber. This required high running costs. In view of the above circumstances, the present invention aims to reduce the weight of the load lock chamber and to significantly reduce the amount of nitrogen gas used.
【００１０】0010
【課題を解決するための手段】本発明は、反応室下方に
連設されたロードロック室に雰囲気ガス供給管及び排気
管を接続し、該供給管と該排気管とに開閉弁を設け、前
記供給管の開閉弁下流と前記排気管の開閉弁上流とを循
環ポンプ、フィルタを有するバイパス管で接続し、前記
ロードロック室に酸素濃度を検出する酸素濃度検出計を
設け、該酸素濃度検出計の検出結果に基づき、開閉弁の
開閉、循環ポンプの駆動を行う様構成したことを特徴と
するものである。[Means for Solving the Problems] The present invention connects an atmospheric gas supply pipe and an exhaust pipe to a load lock chamber connected to a lower part of a reaction chamber, and provides an on-off valve in the supply pipe and the exhaust pipe, A bypass pipe having a circulation pump and a filter connects the on-off valve downstream of the supply pipe and the on-off valve upstream of the exhaust pipe, and an oxygen concentration detector for detecting oxygen concentration is provided in the load lock chamber, and the oxygen concentration is detected. The device is characterized in that it is configured to open and close the on-off valve and drive the circulation pump based on the detection results of the meter.
【００１１】[0011]
【作用】酸素濃度が所定値以上の時には、両開閉弁を開
として雰囲気ガスを流通させ、酸素濃度が所定値以下の
時には両開閉弁を閉として、循環ポンプを駆動してロー
ドロック室の雰囲気ガスを循環させる。[Function] When the oxygen concentration is above a predetermined value, both on-off valves are opened to allow atmospheric gas to flow through. When the oxygen concentration is below a predetermined value, both on-off valves are closed and the circulation pump is driven to create an atmosphere in the load lock chamber. Circulate the gas.
【００１２】0012
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１３】尚、図１中図２中で示したものと同一のも
のには同符号を付し、その説明も省略する。Components in FIGS. 1 and 2 that are the same as those shown in FIG.
【００１４】供給管３に開閉弁８、排気管４に開閉弁９
を設け、前記供給管３と前記排気管９とをバイパス管１
０で接続する。該バイパス管１０の接続箇所は、前記開
閉弁８の下流側、前記開閉弁９の上流側とする。又、該
バイパス管１０には循環ポンプ１１、フィルタ１２を設
け、前記ロードロック室２には酸素濃度検出計１３及び
圧力計１４を設ける。該酸素濃度検出計１３、圧力計１
４の検出結果は、制御装置１５に入力され、該制御装置
１５は前記酸素濃度検出計１３の検出結果を基に前記開
閉弁８，９、前記循環ポンプ１１を動作させる。An on-off valve 8 is provided in the supply pipe 3, and an on-off valve 9 is provided in the exhaust pipe 4.
is provided, and the supply pipe 3 and the exhaust pipe 9 are connected to a bypass pipe 1.
Connect with 0. The bypass pipe 10 is connected to the downstream side of the on-off valve 8 and the upstream side of the on-off valve 9. Further, the bypass pipe 10 is provided with a circulation pump 11 and a filter 12, and the load lock chamber 2 is provided with an oxygen concentration detector 13 and a pressure gauge 14. The oxygen concentration detector 13, pressure gauge 1
The detection results of step 4 are input to a control device 15, and the control device 15 operates the on-off valves 8 and 9 and the circulation pump 11 based on the detection results of the oxygen concentration detector 13.
【００１５】以下、作用を説明する。The operation will be explained below.
【００１６】先ず、開閉弁８、開閉弁９を開け、窒素ガ
スを流し、ロードロック室２内部を窒素ガスに置換する
。この置換の過程で、ロードロック室２内部の酸素濃度
が設定した濃度、例えば１ｐｐｍ 以下となったら、前
記開閉弁８、開閉弁９を閉塞する。前記循環ポンプ１１
を駆動し、封入された窒素ガスをバイパス管１０に流通
循環させる。尚、ロードロック室２、前記開閉弁８、開
閉弁９からのリークを考慮し、ロードロック室２内部の
圧力は大気よりも若干高くなる様に、前記制御装置１５
で前記開閉弁８の開閉を制御する。First, the on-off valve 8 and the on-off valve 9 are opened and nitrogen gas is supplied to replace the inside of the load lock chamber 2 with nitrogen gas. During this replacement process, when the oxygen concentration inside the load lock chamber 2 becomes less than a set concentration, for example, 1 ppm, the on-off valves 8 and 9 are closed. The circulation pump 11
is driven to circulate the sealed nitrogen gas through the bypass pipe 10. In addition, in consideration of leakage from the load lock chamber 2, the on-off valve 8, and the on-off valve 9, the control device 15 is set so that the pressure inside the load lock chamber 2 is slightly higher than that of the atmosphere.
The opening and closing of the on-off valve 8 is controlled.
【００１７】前記した様に、ロードロック室２内部には
ウェーハ装入機構、ウェーハ移載機構が設けられ、ウェ
ーハの装填、移載が行われるが、これら動作時に発生し
たパーティクルは前記フィルタ１２を流通する過程で除
去される。As described above, a wafer loading mechanism and a wafer transfer mechanism are provided inside the load lock chamber 2 to load and transfer wafers, but particles generated during these operations pass through the filter 12. It is removed during the distribution process.
【００１８】時間の経過と共に酸素濃度が変化し、前記
設定値を越えると、前記制御装置１５は前記開閉弁８、
開閉弁９を開き、循環ポンプ１１を停止させ、酸素濃度
が設定値以下となるまで、窒素ガスを流す。係る制御を
繰返してウェーハの処理を行う。When the oxygen concentration changes over time and exceeds the set value, the control device 15 controls the on-off valves 8,
The on-off valve 9 is opened, the circulation pump 11 is stopped, and nitrogen gas is allowed to flow until the oxygen concentration falls below the set value. The wafer is processed by repeating such control.
【００１９】尚、前記フィルタの位置は、循環ポンプ１
１の上流であっても、下流であっても良く、更に循環ポ
ンプ１１による封入窒素ガスの循環は、連続的であって
も又間欠的であっても良い。又、窒素ガスに代え各種不
活性ガスを使用することも可能である。Note that the position of the filter is the same as that of the circulation pump 1.
The nitrogen gas may be circulated upstream or downstream of the circulation pump 11, and the enclosed nitrogen gas may be circulated continuously or intermittently by the circulation pump 11. Moreover, it is also possible to use various inert gases instead of nitrogen gas.
【００２０】[0020]
【発明の効果】以上述べた如く本発明によれば、窒素ガ
ス置換時に真空引きしないので、ロードロック室を軽量
とすることができ、又窒素ガス置換後は酸素濃度が所定
値以上となった時にのみ窒素ガスを流通させるので、窒
素ガスの使用量が大幅に低減する。[Effects of the Invention] As described above, according to the present invention, since vacuum is not drawn during nitrogen gas replacement, the load lock chamber can be made lightweight, and after nitrogen gas replacement, the oxygen concentration reaches a predetermined value or higher. Since nitrogen gas is passed only occasionally, the amount of nitrogen gas used is significantly reduced.
【図１】本発明の一実施例を示す説明図である。FIG. 1 is an explanatory diagram showing one embodiment of the present invention.
【図２】従来例の説明図である。FIG. 2 is an explanatory diagram of a conventional example.
【図３】他の従来例の説明図である。FIG. 3 is an explanatory diagram of another conventional example.
１ 反応室 ２ ロードロック室 ３ 供給管 ４ 排気管 ８ 開閉弁 ９ 開閉弁 １０ バイパス管 １１ 循環ポンプ １２ フィルタ １３ 酸素濃度検出計 1 Reaction chamber 2 Load lock room 3 Supply pipe 4 Exhaust pipe 8 Open/close valve 9 Open/close valve 10 Bypass pipe 11 Circulation pump 12 Filter 13 Oxygen concentration detector
Claims (1)
室に雰囲気ガス供給管及び排気管を接続し、該供給管と
該排気管とに開閉弁を設け、前記供給管の開閉弁下流と
前記排気管の開閉弁上流とを循環ポンプ、フィルタを有
するバイパス管で接続し、前記ロードロック室に酸素濃
度を検出する酸素濃度検出計を設け、該酸素濃度検出計
の検出結果に基づき、開閉弁の開閉、循環ポンプの駆動
を行う様構成したことを特徴とする縦型拡散ＣＶＤ装置
のロードロック室ガスコントロール装置。1. An atmospheric gas supply pipe and an exhaust pipe are connected to a load lock chamber connected to the lower part of the reaction chamber, an on-off valve is provided in the supply pipe and the exhaust pipe, and a shut-off valve downstream of the supply pipe and an exhaust pipe are provided. The opening/closing valve of the exhaust pipe is connected to the upstream side of the opening/closing valve by a bypass pipe having a circulation pump and a filter, and an oxygen concentration detector for detecting oxygen concentration is provided in the load lock chamber, and the opening/closing is performed based on the detection result of the oxygen concentration detector. A load-lock chamber gas control device for a vertical diffusion CVD device, characterized in that it is configured to open and close a valve and drive a circulation pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6916491A JPH0795528B2 (en) | 1991-03-08 | 1991-03-08 | Load lock chamber gas control system for vertical diffusion CVD system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6916491A JPH0795528B2 (en) | 1991-03-08 | 1991-03-08 | Load lock chamber gas control system for vertical diffusion CVD system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04280625A true JPH04280625A (en) | 1992-10-06 |
| JPH0795528B2 JPH0795528B2 (en) | 1995-10-11 |
Family
ID=13394797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6916491A Expired - Fee Related JPH0795528B2 (en) | 1991-03-08 | 1991-03-08 | Load lock chamber gas control system for vertical diffusion CVD system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795528B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100372076B1 (en) * | 1999-07-05 | 2003-02-14 | 미쓰비시덴키 가부시키가이샤 | Apparatus for manufacturing semiconductor device |
| US7618830B2 (en) * | 2003-06-18 | 2009-11-17 | Dongbu Electronics Co., Ltd. | Rapid thermal processing apparatus and methods |
-
1991
- 1991-03-08 JP JP6916491A patent/JPH0795528B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100372076B1 (en) * | 1999-07-05 | 2003-02-14 | 미쓰비시덴키 가부시키가이샤 | Apparatus for manufacturing semiconductor device |
| US7618830B2 (en) * | 2003-06-18 | 2009-11-17 | Dongbu Electronics Co., Ltd. | Rapid thermal processing apparatus and methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0795528B2 (en) | 1995-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |