JPH0377464U - - Google Patents

Info

Publication number
JPH0377464U
JPH0377464U JP13744189U JP13744189U JPH0377464U JP H0377464 U JPH0377464 U JP H0377464U JP 13744189 U JP13744189 U JP 13744189U JP 13744189 U JP13744189 U JP 13744189U JP H0377464 U JPH0377464 U JP H0377464U
Authority
JP
Japan
Prior art keywords
film
oxide film
gate insulating
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13744189U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13744189U priority Critical patent/JPH0377464U/ja
Publication of JPH0377464U publication Critical patent/JPH0377464U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の一実施例のゲート絶縁膜に
、酸化膜と窒化膜の２層膜を用いた高耐圧ＭＯＳ
ＩＣ高圧部Ｐチヤンネルトランジスタの要部断
面図である。第２図は、ゲート絶縁膜に酸化膜の
みを用いた従来のＭＯＳ ＩＣ高圧部Ｐチヤンネ
ルトランジスタの要部断面図である。 １……ＰＳＧ（層間絶縁膜）、２……ポリシリ
コンゲート、３……ゲート酸化膜、４……接合部
、５……フイールド酸化膜、６……Ｎ型エピ層、
７……ソース領域、８……ゲート電極、９……ド
レイン領域。

Claims (1)

    【実用新案登録請求の範囲】
  1. ゲート絶縁膜を、酸化膜と窒化膜の２層膜で形
    成したことを特徴とするＭＯＳ半導体装置。
JP13744189U 1989-11-28 1989-11-28 Pending JPH0377464U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13744189U JPH0377464U (ja) 1989-11-28 1989-11-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13744189U JPH0377464U (ja) 1989-11-28 1989-11-28

Publications (1)

Publication Number Publication Date
JPH0377464U true JPH0377464U (ja) 1991-08-05

Family

ID=31684597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13744189U Pending JPH0377464U (ja) 1989-11-28 1989-11-28

Country Status (1)

Country Link
JP (1) JPH0377464U (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170888A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2008258640A (ja) * 2008-05-07 2008-10-23 Renesas Technology Corp 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170888A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2008258640A (ja) * 2008-05-07 2008-10-23 Renesas Technology Corp 半導体集積回路装置

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