JPH0363942A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH0363942A JPH0363942A JP1199439A JP19943989A JPH0363942A JP H0363942 A JPH0363942 A JP H0363942A JP 1199439 A JP1199439 A JP 1199439A JP 19943989 A JP19943989 A JP 19943989A JP H0363942 A JPH0363942 A JP H0363942A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording
- base film
- recording medium
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 17
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 150000004770 chalcogenides Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052798 chalcogen Inorganic materials 0.000 claims description 2
- 150000001787 chalcogens Chemical class 0.000 claims description 2
- 229920001477 hydrophilic polymer Polymers 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- -1 semimetals Chemical class 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 29
- 229920005989 resin Polymers 0.000 abstract description 29
- 239000000758 substrate Substances 0.000 abstract description 21
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 239000002861 polymer material Substances 0.000 abstract description 2
- 238000003848 UV Light-Curing Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 17
- 229920001220 nitrocellulos Polymers 0.000 description 14
- 239000000020 Nitrocellulose Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 4
- 150000008049 diazo compounds Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 2
- UUXFWHMUNNXFHD-UHFFFAOYSA-N barium azide Chemical compound [Ba+2].[N-]=[N+]=[N-].[N-]=[N+]=[N-] UUXFWHMUNNXFHD-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は追記型光ディスクの高密度化を実現するための
下地膜材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a base film material for realizing high density write-once optical discs.
追記型光ディスクの記録膜としては、レーザ光ビームに
よる穴形成タイプのものが主流であり、数年前から市販
されている。とくにＴｅを主成分とするカルコゲナイド
薄膜は記録・再生特性ならびに長期間にわたって安定性
に優れていることが実証されている。The mainstream recording film for write-once optical discs is one in which holes are formed using a laser beam, and these have been commercially available for several years. In particular, chalcogenide thin films containing Te as a main component have been proven to have excellent recording/reproducing characteristics and long-term stability.
Ｔｅは波長が７８０〜８３０ｎｍの半導体レーザ光を吸
収し、しかも融点が４５０℃と低く、記録パワーが小さ
くてすむという利点を有し、そのために記録膜の主成分
として用いられている。また、このＴｏは、実際にはＴ
ａ Ｓ ａ系等として使用されている。Ｓｓ添加はＴ
ｅの酸化反応を防止するためである。Te has the advantage that it absorbs semiconductor laser light with a wavelength of 780 to 830 nm, has a low melting point of 450° C., and requires low recording power, and is therefore used as the main component of recording films. Also, this To is actually T
It is used as a S a series, etc. Ss addition is T
This is to prevent the oxidation reaction of e.
記録穴の形成メカニズムは以下のように推測されている
。記録膜はレーザ光を吸収し、発生した熱により溶融す
る。記録レーザパワーに応じて記録膜の蒸発も部分的に
おこる。この場合溶融したからといって必らず穴ができ
るとは限らない。The formation mechanism of recording holes is speculated as follows. The recording film absorbs the laser beam and is melted by the generated heat. Partial evaporation of the recording film also occurs depending on the recording laser power. In this case, melting does not necessarily mean that a hole will be formed.
第２図に示したように記録膜の下にある。いわゆる下地
膜の熱分解特性に依存している。つまり記録膜の融点よ
りも低い温度で激しく熱分解する下地膜の場合には発生
するガスのために記録膜の溶融膜が膨らみ、破裂するこ
とがキラカケとなり。As shown in FIG. 2, it is located below the recording film. It depends on the so-called thermal decomposition characteristics of the base film. In other words, in the case of a base film that undergoes violent thermal decomposition at a temperature lower than the melting point of the recording film, the molten film of the recording film swells due to the gas generated, causing it to rupture and cause cracking.
確実に穴が形成される。A hole is reliably formed.
このような目的のために従来は上記下地膜としてニトロ
セルロースや紫外線硬化樹脂などが使用されてきた。と
くにニトロセルロースは１８０℃付近で急激に熱分解す
るので優れた下地膜と、なっている。この場合には記録
パワーを低下させることができるために形成される穴径
も小さくなり、記録の高密度化にも十分対処できる特性
を有している。For this purpose, nitrocellulose, ultraviolet curing resins, and the like have conventionally been used as the base film. In particular, nitrocellulose is rapidly thermally decomposed at around 180°C, making it an excellent base film. In this case, since the recording power can be lowered, the diameter of the holes formed can also be reduced, and the recording material has characteristics that can sufficiently cope with higher density recording.
ニトロセルロースの下地腸形成法には２通りある。１つ
は案内溝やヘッダー信号用のビットを表面に有する透明
レプリカ基板上に回転塗布する方法。２つ目は特開昭５
７−５５５４４にあるようにＮｉスタンパ上に回転塗布
法によりニトロセルロース層を形成し、その上に紫外線
硬化樹脂液をのせて、さらにその上に平坦な透明ディス
ク基板をのせ、基板側から紫外線を照射・硬化後、スタ
ンパから剥離させる方法である。There are two methods for forming a nitrocellulose base. One method is to spin coating onto a transparent replica substrate that has guide grooves and bits for header signals on its surface. The second one is Japanese Patent Publication No. 5
7-55544, a nitrocellulose layer is formed on a Ni stamper by spin coating, an ultraviolet curing resin liquid is placed on top of it, a flat transparent disk substrate is placed on top of it, and ultraviolet rays are applied from the substrate side. This method involves peeling off the stamper after irradiation and curing.
ニトロセルロースの溶媒は酢酸ｎ−ブチルなどのエステ
ル系のものが用いられている。Ester-based solvents such as n-butyl acetate are used as the solvent for nitrocellulose.
したがって前者の方法の場合には、塗布面が有機溶媒に
弱いポリカーボネート、ポリメチルメタクリレート、ポ
リオレフィンなどの射出成形基板面にニトロセルロース
の膜を形成することは基板の表面が溶は出すため難しい
。但し紫外線硬化樹脂を用いた２ｐ法レプリカ基板では
問題がない。Therefore, in the case of the former method, it is difficult to form a nitrocellulose film on the injection molded substrate surface, which is made of polycarbonate, polymethyl methacrylate, polyolefin, etc., which are susceptible to organic solvents, because the surface of the substrate will dissolve. However, there is no problem with a 2p method replica substrate using an ultraviolet curing resin.
これは、硬化した樹脂は２次元的に架橋しており、溶媒
に強くなっているからである。This is because the cured resin is two-dimensionally crosslinked and is resistant to solvents.
後者の方法ではニトロセルロース膜上にのせられる液状
の紫外線硬化樹脂が硬化されるまでに。In the latter method, the liquid UV-curable resin placed on the nitrocellulose membrane is cured.
ニトロセルロース層へ拡散し、これを膨潤させる場合が
多い、このような拡散を生ずると下地層は純枠なニトロ
セルロース層ではなく、紫外線硬化樹脂との混合物とな
り、急激な熱分解特性が失なわれることになる。したが
ってニトロセルロース層へ拡散しにくい紫外線硬化樹脂
の成分を選ぶ必要がある。しかしこの選択はかなり困難
である。It often diffuses into the nitrocellulose layer and causes it to swell. When this type of diffusion occurs, the underlayer becomes a mixture with the UV-curable resin rather than a pure nitrocellulose layer, which causes rapid thermal decomposition properties to be lost. You will be killed. Therefore, it is necessary to select components of the ultraviolet curing resin that are difficult to diffuse into the nitrocellulose layer. However, this choice is quite difficult.
要するにニトロセルロースを下地膜に使用すると基板材
料によっては回転塗布ができない場合があること、また
紫外線硬化樹脂との相溶性の点で問題があるということ
である。In short, if nitrocellulose is used as a base film, spin coating may not be possible depending on the substrate material, and there are problems with compatibility with ultraviolet curing resins.
従来の下地膜材料としてのニトロセルロースは。 Nitrocellulose is the traditional base membrane material.
親水性が低く、射出成形で得られる樹脂基板上に回転塗
布することが困難であり、また紫外線硬化樹脂との相溶
性が高いために望ましい純枠なニトロセルロースの下地
膜を形成することも困難であった。Due to its low hydrophilicity, it is difficult to spin-coat it onto a resin substrate obtained by injection molding, and it is also difficult to form the desired pure nitrocellulose base film due to its high compatibility with UV-curable resins. Met.
本発明の目的は上記の困難性を解決し、しかも、５、
急激な熱分解特性を維持した下地膜の形成が可能な材料
を提供することにある。The object of the present invention is to solve the above-mentioned difficulties and, moreover, 5. to provide a material that can form a base film that maintains rapid thermal decomposition characteristics.
上記目的を達成するために本発明は記録膜の融点より低
い温度で激しく熱分解する親水性高分子材料を下地膜に
使用したものである。In order to achieve the above object, the present invention uses a hydrophilic polymer material, which is violently thermally decomposed at a temperature lower than the melting point of the recording film, for the base film.
具体的にはポリビニルアルコール（ＰＶＡ）をベースに
した材料が好ましい、ＰＶＡそのものは水溶性であり、
また第２図の曲１／Ｍ１０に示したように、３００℃付
近から熱分解を起す、しかし、これではまだ熱分解温度
が晶く、記録パワーを大きくする必要がある。そこでＰ
ＶＡにジアゾ化合物を混合した。ジアゾ化合物は水溶性
のものがあり、ＰＶＡとの混合は容易である。Specifically, materials based on polyvinyl alcohol (PVA) are preferred; PVA itself is water-soluble;
Further, as shown in song 1/M10 in FIG. 2, thermal decomposition occurs at around 300° C. However, the thermal decomposition temperature is still high at this point, and it is necessary to increase the recording power. So P
A diazo compound was mixed with VA. Some diazo compounds are water-soluble and can be easily mixed with PVA.
ジアゾ化合物としてはアジ化鉛ｐｂ（Ｎａ）ｚｙアジ化
バリウムＢａ（Ｎｓ）ｘなどがある。第２図の曲線９は
Ｐ Ｖ Ａ Ｂ ａ （Ｎｓ）ｘの熱分解特性を示し
ている。Examples of the diazo compound include lead azide pb(Na)zy, barium azide Ba(Ns)x, and the like. Curve 9 in FIG. 2 shows the thermal decomposition characteristics of PVABa(Ns)x.
また、ＰＶＡ分子（１） −〇Ｈ基を−ＯＮ Ｏｘ テ
ｋｊｔ換Ｉｚｆニー Ｐ Ｖ Ａ誘導体を合成した。こ
れは、上記−ＯＮ Ｏｘの置換率が高くなると、水に溶
解はしないが、親木性は高く、紫外線硬化樹脂との相溶
性は低くＰＶＡ誘導体と紫外線硬化樹脂との混合を生じ
にくくなる。In addition, a PVA derivative was synthesized in which the PVA molecule (1) -〇H group was replaced with -ON Ox tekjt. This is because when the substitution rate of -ON Ox increases, although it does not dissolve in water, it has high wood affinity and low compatibility with the ultraviolet curable resin, making it difficult to mix the PVA derivative and the ultraviolet curable resin.
上記ＰＶＡ誘導体の熱分解特性を第２図の曲線８に示し
た。この場合にはさらに熱分解温度が下がり、ニトロセ
ルロースの熱分解温度に近づいている。The thermal decomposition characteristics of the above PVA derivative are shown in curve 8 in FIG. In this case, the thermal decomposition temperature further decreases and approaches the thermal decomposition temperature of nitrocellulose.
上記のような下地膜上に記録膜としてＴ ｅ Ｓ ｅ
Ｐ ｂ膜（〜２７０人厚）全形成したときの下地膜の効
果について述べる。T e S e as a recording film on the base film as described above.
The effect of the base film when the entire Pb film (~270 mm thick) is formed will be described.
Ｔ ａ Ｓ ｅ Ｐ ｂ膜の融点は組成比により異なる
が、約４００〜４５０℃である。光ビーム照射によりＴ
ｅ Ｓ ｅ Ｐ ｂ膜が溶融した際、それが直接接触
している下地膜は熱分解する。このとき発生する気体の
圧力により、溶融膜が膨らみ、破裂して穴形成のキラカ
ケとなる。そのために熱分解の起りにくい紫外線硬化樹
脂だけの場合と比較すると、下地膜を設けた場合には、
より低い記録パワーのもとでも穴が形成される。The melting point of the T a S e P b film varies depending on the composition ratio, but is approximately 400 to 450°C. T by light beam irradiation
When the e S e P b film melts, the underlying film that it is in direct contact with is thermally decomposed. Due to the pressure of the gas generated at this time, the molten film swells and ruptures, forming cracks that form holes. Therefore, compared to the case of using only ultraviolet curing resin, which is less prone to thermal decomposition, when a base film is provided,
Holes are formed even under lower recording power.
この様子を第３図に示した。ここで、第３図の各曲線は
、第２図の同符号の下地膜のものに対応している。記録
パワーが小さいときには、形成される穴径が小さくなり
、高密度記録が可能となる。This situation is shown in Figure 3. Here, each curve in FIG. 3 corresponds to the base film with the same reference numeral in FIG. 2. When the recording power is low, the diameter of the holes formed becomes small, allowing high-density recording.
下地膜の厚さは０．００２〜５μｍである。レプリカ基
板に回転塗布する場合には、案内溝や信号ピットが埋ま
らないようにする必要がある。また熱分解特性が効果的
に作用する最小の膜厚がある。The thickness of the base film is 0.002 to 5 μm. When spin-coating a replica substrate, it is necessary to prevent guide grooves and signal pits from being buried. There is also a minimum film thickness at which the thermal decomposition properties are effective.
これらを検討すると最小膜厚は０．００２μｍとなる。Considering these, the minimum film thickness is 0.002 μm.
もう一方の形成法では５μｍ以下であれば十分である。In the other formation method, a thickness of 5 μm or less is sufficient.
望ましくは０．１〜１μｍである。The thickness is preferably 0.1 to 1 μm.
５μｍ以上であると高温高湿環境で下地膜が剥離するこ
とがある。また、これらの材料は親水性であるために高
湿環境で膨潤し、溝やピットが変形する。とくに膜厚が
大きいときにおこる。これを防ぐためにはＰＶＡに架橋
剤を加えて光や熱により架橋反応を起させ、膨潤を抑え
ることができる。When the thickness is 5 μm or more, the base film may peel off in a high temperature and high humidity environment. Additionally, since these materials are hydrophilic, they swell in high humidity environments, causing grooves and pits to deform. This especially occurs when the film thickness is large. To prevent this, it is possible to add a crosslinking agent to PVA and cause a crosslinking reaction with light or heat to suppress swelling.
例えば水溶液ＰＶＡ系では重クロム酸アンモニウムを添
加し、紫外線照射により架橋させることができる。For example, in the case of an aqueous PVA system, ammonium dichromate can be added and crosslinking can be effected by ultraviolet irradiation.
穴形成型光記録膜の融点よりも低い温度で急激に熱分解
をおこし、しかも親水性を有する材料を下地膜とするこ
とにより、樹脂基板や紫外線硬化樹脂付ガラス基板上へ
の下地膜形成が確実かつ容易におこなえるようになる。By using a material that rapidly thermally decomposes at a temperature lower than the melting point of the hole-forming optical recording film and is hydrophilic as the base film, it is possible to form the base film on a resin substrate or a glass substrate coated with UV-curable resin. You will be able to do it reliably and easily.
そのために記録パワーを低下させることができ、小さい
穴を確実にあけることが可能となり、従来よりも高密度
の記録が可能となる。For this reason, the recording power can be lowered, making it possible to reliably make small holes, making it possible to record at a higher density than in the past.
以下、本発明の実施例を第１〜３図により説明する。 Embodiments of the present invention will be described below with reference to FIGS. 1 to 3.
（実施例１）
直径３Ｑａａ、厚さ１．１５ａｍの化学強化ガラス基板
の片面をシリコンカップリング剤で表面処理を行った。(Example 1) One side of a chemically strengthened glass substrate having a diameter of 3 Qaa and a thickness of 1.15 am was surface-treated with a silicon coupling agent.
下地膜材としてポリビニルアルコールとアジ化バリウム
Ｂａ（Ｎａ）の水溶液を用意した。An aqueous solution of polyvinyl alcohol and barium azide (Ba(Na)) was prepared as a base film material.
各々の濃度はそれぞれ約２．５重量％とじた。また紫外
線硬化樹脂としてはアクリレート系のものを使用した。The concentration of each was approximately 2.5% by weight. In addition, an acrylate type resin was used as the ultraviolet curing resin.
まずＮｉスタンバ上に上記下地膜用溶液を回転塗布した
。膜厚は約０．１μｍである。First, the above base film solution was spin-coated onto a Ni stand. The film thickness is approximately 0.1 μm.
つぎに液状の紫外線硬化樹脂を下地膜の上にのせ、さら
にその上に上記ガラス基板をのせる。紫外線硬化樹脂を
内外周−様に拡げた後、高圧水銀灯（８ＫＷ）で３０秒
間、紫外線照射した。硬化後スターンバと下地膜との境
界で剥離し、レプリカ基板が得られる。これにスパッタ
法によりＴａ５ｅＰｂ膜を設けた。Next, a liquid ultraviolet curing resin is placed on the base film, and the glass substrate is placed on top of it. After spreading the ultraviolet curable resin to the inner and outer peripheries, it was irradiated with ultraviolet rays for 30 seconds using a high-pressure mercury lamp (8KW). After curing, it is peeled off at the boundary between the stirrer bar and the base film to obtain a replica substrate. A Ta5ePb film was provided on this by sputtering.
第工図は以上のようにして形成されたディスクの断面図
である。The fourth engineering drawing is a sectional view of the disk formed as described above.
この円板を回転数６ＱＯｒｐｍで回転させ、半導体レー
ザ光（８３０ｎｍ波長）を、開口数が０．５０のレンズ
で絞った光ビームを照射して信号パルスを記録した。こ
のときの記録パルス幅は９０μｓである。記録パワーと
穴径との関係を第３図の曲線９に示した。紫外線硬化樹
脂だけで下地膜のない場合（曲線１１）に比較して、記
録パワーが小さいところから穴がおいていることがわか
る。穴の形状も良好であった。またこの下地膜に紫外線
つた、つまりＰ Ｖ Ａ −Ｂ ａ ＣＮ５）ｘの熱分
解性が紫外線硬化樹脂により損われることはなかった。This disc was rotated at a rotational speed of 6 QOrpm, and a signal pulse was recorded by irradiating a semiconductor laser light (830 nm wavelength) with a light beam focused by a lens having a numerical aperture of 0.50. The recording pulse width at this time is 90 μs. The relationship between recording power and hole diameter is shown in curve 9 in FIG. It can be seen that holes are formed where the recording power is low compared to the case where there is only an ultraviolet curable resin and no base film (curve 11). The shape of the hole was also good. Furthermore, the undercoat film was exposed to ultraviolet rays, that is, the thermal decomposition of PVA-B a CN5)x was not impaired by the ultraviolet curing resin.
（実施例２）
つぎにＰ Ｖ Ａ −ＯＮ Ｏｚ下地膜溶液を準備した
。(Example 2) Next, a PVA-ON Oz base film solution was prepared.
置換率は約７０％のものを合成した。溶剤としてはジア
セトンアルコールを用いた。この溶液を上記のＰＶＡ−
Ｂａ（Ｎｓ）ｚ溶液の代りに使用し、同じプロセスで円
板を作製した。このときの記録パワーと穴径との関係を
第３図の曲線８に示した。A product with a substitution rate of about 70% was synthesized. Diacetone alcohol was used as the solvent. This solution was added to the PVA-
Discs were prepared using the same process using Ba(Ns)z solution instead. The relationship between recording power and hole diameter at this time is shown by curve 8 in FIG.
本実施例によればさらに小さい記録パワーで穴が形成で
きることがわかる。It can be seen that according to this example, holes can be formed with even lower recording power.
この実施例においても紫外線硬化樹脂成分の拡散により
熱分解性が損われることは認められなかった。In this example as well, it was not observed that the thermal decomposition property was impaired due to the diffusion of the ultraviolet curable resin component.
ＰＶＡそのものの下地膜では第２図の曲線１０に示した
熱分解特性から予測されるように、穴径を小さくすると
いう効果はやや小さかった。ただし紫外線硬化樹脂だけ
の場合と比較すれば、効果は明らかに認められる。As expected from the thermal decomposition characteristics shown in curve 10 of FIG. 2, the effect of reducing the hole diameter was rather small in the PVA base film itself. However, when compared to the case of using only UV-curable resin, the effect is clearly recognized.
（実施例３）
直径１３（！１１．厚さ工、２Ｗ＋の射出成型によるポ
リカーボネート基板をｍ備した。実施例１と同じようＩ
ｃＰＶＡ−Ｂ ａ （Ｎａ）ｚ水溶液、ＰＶＡ水溶液、
およびＰＶＡ−〇Ｎ Ｏｘのドアセトンアルコール溶液
を調合した。これらの溶液を用いてポリカーボネート基
板上に回転塗布により下地膜を形成した。このときの膜
厚は０．０５μｍ程度とした。(Example 3) An injection molded polycarbonate substrate with a diameter of 13 (!11.m) and a thickness of 2W+ was provided.
cPVA-B a (Na)z aqueous solution, PVA aqueous solution,
and PVA-〇N Ox doacetone alcohol solution was prepared. Using these solutions, a base film was formed on a polycarbonate substrate by spin coating. The film thickness at this time was approximately 0.05 μm.
この膜厚では案内溝や信号ピットの埋まり方は小さく、
記録装置にかけたときのトラッキング等に問題はなかっ
た。With this film thickness, the filling of guide grooves and signal pits is small.
There were no problems with tracking when using the recording device.
これらにＴ ｅ Ｓ ｅ Ｐ ｂ膜を設け、回転数１８
００ｒｐｍで記録した。光学系の構成は実施例１のとき
と同じである。記録パルス幅は９０μＳとした。A T e S e P b film is provided on these, and the number of revolutions is 18.
Recorded at 00 rpm. The configuration of the optical system is the same as in the first embodiment. The recording pulse width was 90 μS.
記録パワーと記録穴径との関係は第３図の場合とほぼ同
様であった。こまりこれらの下地膜により小さい穴が確
実にあくようになっていることが認められた。The relationship between recording power and recording hole diameter was almost the same as in the case of FIG. It was observed that these base films ensured that small holes were formed.
これらの円板を６０℃、９０％相対湿度の環境に放置す
ると下地膜が水分により膨潤し、案内溝などが変形する
ことがある。とくに下Ｊｔ！ＩｙｔＡが０．１μｍ以上
でこの影響が多い、そこで下地膜用水溶液に重クロム酸
アンモニウム（Ｎ Ｈａ）＊Ｃｒ ｓｏ７を約１０重量
％加え、回転塗布した後紫外光照射によりＰＶＡ分子の
架橋をさせた。この場合には水分による膨潤の程度が小
さくなり、実用上の問題はなくなった。If these discs are left in an environment of 60° C. and 90% relative humidity, the base film will swell with moisture, and the guide grooves etc. may become deformed. Especially the lower Jt! This effect is more pronounced when IytA is 0.1 μm or more, so about 10% by weight of ammonium dichromate (N Ha) * Cr so7 is added to the aqueous solution for the base film, and after spin coating, the PVA molecules are cross-linked by UV light irradiation. Ta. In this case, the degree of swelling due to water was reduced and there was no practical problem.
本発明のいずれの実施例においても、記録膜としてＴｅ
５ｅＰｂ記録膜の代わりに、カルコゲン元素、カルコゲ
ン化物（カルコゲナイド）、半導体。In any of the embodiments of the present invention, Te is used as the recording film.
Chalcogen element, chalcogenide (chalcogenide), semiconductor instead of 5ePb recording film.
半金属、金属のうちの少なくとも一者よりなる群より選
ばれた少なくとも一者より成るものを用いてよい。It may be made of at least one member selected from the group consisting of at least one of semimetals and metals.
本発明によれば穴形成型記録膜の下地膜を樹脂基板およ
び紫外線硬化樹脂付ガラス基板等にその熱分解特性を損
うことなく設けることができる。According to the present invention, a base film for a hole-forming recording film can be provided on a resin substrate, a glass substrate coated with an ultraviolet curable resin, etc. without impairing its thermal decomposition properties.
そのために所要記録パワーを低下させることができ、よ
り小さい穴形成が可能となり、高密度記録が達成できる
。Therefore, the required recording power can be lowered, smaller holes can be formed, and high-density recording can be achieved.
第工図は本発明の一実施例の光記録媒体の断面図、第２
図は下地膜材料の熱分解特性を示すグラフ、第３国は各
下地膜を用いた媒体の記録パワーと記録穴径との関係を
示すグラフである。
ｌ・・・透明基板、２・・・紫外線硬化樹脂層、３・・
・下地膜、４・・・穴形成型記録膜、５・・・案内用溝
、６・・・記録穴、７・・・穴径、８〜１０・・・下地
膜の実施例、１工・・・下地膜なしの紫外線硬化樹脂だ
けの実施例。
；、ｌ席The second construction drawing is a sectional view of an optical recording medium according to an embodiment of the present invention.
The figure is a graph showing the thermal decomposition characteristics of the base film material, and the third country is a graph showing the relationship between the recording power and the recording hole diameter of the medium using each base film. l...Transparent substrate, 2...Ultraviolet curing resin layer, 3...
・Base film, 4... Hole-forming recording film, 5... Guide groove, 6... Recording hole, 7... Hole diameter, 8-10... Examples of base film, 1 construction ...Example using only ultraviolet curing resin without base film. ;, l seat
Claims (1)
、カルコゲナイド、半導体、半金属、および金属からな
る群より選ばれた少なくとも一者からなる記録薄膜およ
び記録膜材料の融点よりも低い温度で激しく熱分解し、
気体を発生させる親水性材料の下地膜とから構成される
ことを特徴とする光記録媒体。 ２、下地膜材料はポリビニルアルコール、ニトロ化ポリ
ビニルアルコール、およびアゾ化合物を分散させたポリ
ビニルアルコールなどの親水性高分子からなることを特
徴とする請求項１記載の光記録媒体。 ３、記録膜はＴｅＳｅ、ＴｅＳｅＰｂ、ＴｅＳｅＳｂ、
ＴｅＳｅＳｂＳ等のＴｅ系カルコゲナイドからなること
を特徴とする請求項１もしくは２記載の光記録媒体。 ４、記録膜はＢｉ、Ａｕ、Ｃｒ、Ｓｎなどの半金属もし
くは金属からなることを特徴とする請求項１もしくは２
記載の光記録媒体。[Claims] 1. Higher than the melting point of the recording thin film and recording film material made of at least one member selected from the group consisting of chalcogen elements, chalcogenides, semiconductors, semimetals, and metals, which are formed by a laser beam. Violently thermally decomposes at low temperatures,
An optical recording medium comprising a base film of a hydrophilic material that generates gas. 2. The optical recording medium according to claim 1, wherein the base film material is made of a hydrophilic polymer such as polyvinyl alcohol, nitrated polyvinyl alcohol, and polyvinyl alcohol in which an azo compound is dispersed. 3. The recording film is TeSe, TeSePb, TeSeSb,
3. The optical recording medium according to claim 1, wherein the optical recording medium is made of Te-based chalcogenide such as TeSeSbS. 4. Claim 1 or 2, wherein the recording film is made of a semimetal or metal such as Bi, Au, Cr, or Sn.
The optical recording medium described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199439A JPH0363942A (en) | 1989-08-02 | 1989-08-02 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199439A JPH0363942A (en) | 1989-08-02 | 1989-08-02 | Optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0363942A true JPH0363942A (en) | 1991-03-19 |
Family
ID=16407836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1199439A Pending JPH0363942A (en) | 1989-08-02 | 1989-08-02 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0363942A (en) |
-
1989
- 1989-08-02 JP JP1199439A patent/JPH0363942A/en active Pending
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