JPH0340511B2 - - Google Patents

Info

Publication number: JPH0340511B2
Authority: JP; Japan
Prior art keywords: film; thin film; address; address line; lines
Prior art date: 1985-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP60214570A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6276545A (ja

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-09-30

Filing date

1985-09-30

Publication date

1991-06-19

1985-09-30 Application filed filed Critical

1985-09-30 Priority to JP60214570A priority Critical patent/JPS6276545A/ja

1987-04-08 Publication of JPS6276545A publication Critical patent/JPS6276545A/ja

1991-06-19 Publication of JPH0340511B2 publication Critical patent/JPH0340511B2/ja

Status Granted legal-status Critical Current

Links

239000010408 film Substances 0.000 claims description 56
239000010409 thin film Substances 0.000 claims description 27
239000002184 metal Substances 0.000 claims description 11
229910052751 metal Inorganic materials 0.000 claims description 11
239000000758 substrate Substances 0.000 claims description 11
239000010407 anodic oxide Substances 0.000 claims description 10
239000004065 semiconductor Substances 0.000 claims description 8
229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
239000011229 interlayer Substances 0.000 claims description 4
239000004973 liquid crystal related substance Substances 0.000 description 8
229910004298 SiO 2 Inorganic materials 0.000 description 7
238000000034 method Methods 0.000 description 7
230000007547 defect Effects 0.000 description 6
239000003990 capacitor Substances 0.000 description 5
238000010586 diagram Methods 0.000 description 4
239000010410 layer Substances 0.000 description 4
239000011159 matrix material Substances 0.000 description 4
239000011521 glass Substances 0.000 description 3
238000003491 array Methods 0.000 description 2
UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000009413 insulation Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
229920001721 polyimide Polymers 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
238000002048 anodisation reaction Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000012447 hatching Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
239000012528 membrane Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Liquid Crystal (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP60214570A 1985-09-30 1985-09-30 表示装置用駆動回路基板 Granted JPS6276545A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60214570A JPS6276545A (ja)	1985-09-30	1985-09-30	表示装置用駆動回路基板

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60214570A JPS6276545A (ja)	1985-09-30	1985-09-30	表示装置用駆動回路基板

Publications (2)

Publication Number	Publication Date
JPS6276545A JPS6276545A (ja)	1987-04-08
JPH0340511B2 true JPH0340511B2 (ko)	1991-06-19

Family

ID=16657900

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60214570A Granted JPS6276545A (ja)	1985-09-30	1985-09-30	表示装置用駆動回路基板

Country Status (1)

Country	Link
JP (1)	JPS6276545A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2620240B2 (ja)	1987-06-10	1997-06-11	株式会社日立製作所	液晶表示装置
JP2786628B2 (ja) *	1987-10-15	1998-08-13	シャープ株式会社	液晶パネルの電極構造
JPH0816758B2 (ja) *	1989-02-17	1996-02-21	松下電器産業株式会社	液晶画像表示装置およびその製造方法
US5485019A (en)	1992-02-05	1996-01-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54154289A (en) *	1978-05-26	1979-12-05	Matsushita Electric Ind Co Ltd	Manufacture of thin-film transistor array

1985
- 1985-09-30 JP JP60214570A patent/JPS6276545A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54154289A (en) *	1978-05-26	1979-12-05	Matsushita Electric Ind Co Ltd	Manufacture of thin-film transistor array

Also Published As

Publication number	Publication date
JPS6276545A (ja)	1987-04-08

Legal Events

Date	Code	Title	Description
2005-09-30	EXPY	Cancellation because of completion of term

Publication	Publication Date	Title
EP0376437B1 (en)	1994-12-21	An active matrix type liquid crystal display
JP3708637B2 (ja)	2005-10-19	液晶表示装置
EP0301571B1 (en)	1993-06-23	Thin film transistor array
JPH06160904A (ja)	1994-06-07	液晶表示装置とその製造方法
JPH04163528A (ja)	1992-06-09	アクティブマトリクス表示装置
KR100308367B1 (ko)	2002-07-18	액티브매트릭스기판
KR940008248B1 (ko)	1994-09-09	액정표시소자
EP0605176B1 (en)	1999-08-25	An active matrix type liquid crystal display panel and a method for producing the same
JPH04257826A (ja)	1992-09-14	アクティブマトリクス基板の製造方法
JP3657371B2 (ja)	2005-06-08	アクティブマトリクス型表示装置
JPH07113728B2 (ja)	1995-12-06	アクティブマトリクス基板
JPH01185522A (ja)	1989-07-25	表示装置駆動用基板
JP2800958B2 (ja)	1998-09-21	アクティブマトリクス基板
JPH0340511B2 (ko)	1991-06-19
JPH04265945A (ja)	1992-09-22	アクティブマトリクス基板
JPH0812539B2 (ja)	1996-02-07	表示装置及びその製造方法
JP3085305B2 (ja)	2000-09-04	液晶表示装置の製造方法
JP2690404B2 (ja)	1997-12-10	アクティブマトリクス基板
JPS62205390A (ja)	1987-09-09	表示装置用基板
JPS6269670A (ja)	1987-03-30	表示装置用基板の製造方法
JP2664814B2 (ja)	1997-10-22	アクティブマトリクス表示装置
JPH0618922A (ja)	1994-01-28	液晶表示装置
JPH03153217A (ja)	1991-07-01	Ｔｆｔパネルおよびその製造方法
JPH0682823A (ja)	1994-03-25	論理・駆動回路およびその製造方法
JPH03122620A (ja)	1991-05-24	表示電極基板