JPH0330381A - Etch mirror semiconductor laser - Google Patents
Etch mirror semiconductor laserInfo
- Publication number
- JPH0330381A JPH0330381A JP16379089A JP16379089A JPH0330381A JP H0330381 A JPH0330381 A JP H0330381A JP 16379089 A JP16379089 A JP 16379089A JP 16379089 A JP16379089 A JP 16379089A JP H0330381 A JPH0330381 A JP H0330381A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor laser
- active layer
- etch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000005253 cladding Methods 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の属する技術分野
本発明は、０ＥＩＣ等の集積化半導体レーザに不可欠の
エッチミラー半導体レーザに関するものでる。DETAILED DESCRIPTION OF THE INVENTION (1) Technical field to which the invention pertains The present invention relates to an etch mirror semiconductor laser which is essential for integrated semiconductor lasers such as 0EICs.
（２）従来の技術
従来のエッチミラー半導体レーザの層構造は、ｎ型クラ
ンド層、ｕｎｄｏｐｅ活性層、ρ型クラッド層からなる
単純なグブルヘテロ接合構造であったため、エッチミラ
ー製作時に、不可避的にエツチング端面がわずかに傾く
ことによって著しく反射率が低下し、エッチミラーレー
ザの特性が劣っていた。(2) Conventional technology The layer structure of a conventional etch mirror semiconductor laser was a simple double heterojunction structure consisting of an n-type cladding layer, an undoped active layer, and a ρ-type cladding layer. The slight inclination of the end face significantly reduced the reflectance, resulting in poor characteristics of the etch mirror laser.
（３）発明の目的
本発明の目的は、工・ンチングミラー製作時に不可避的
に入るエツチング端面が垂直端面よりわずかに傾くこと
による端面の反射率の低下を掻小にし、且つ閉じ込め係
数の大なる低発振しきい値を有するエッチミラー半導体
レーザを提供することにある。(3) Purpose of the Invention The purpose of the present invention is to minimize the decrease in the reflectance of the end face due to the slight inclination of the etched end face with respect to the vertical end face, which inevitably occurs during the production of etched mirrors, and to greatly reduce the confinement coefficient. An object of the present invention is to provide an etch mirror semiconductor laser having a oscillation threshold.
（４）発明の構成
（４−１）発明の特徴と従来の技術との差異本発明は、
エッチミラー半導体レーザの層構造を、第１導電型（例
えばｎ型）の基板と、第１導電型（例えばｎ型）のクラ
ッド層と、ｕｎｄｏｐｅの活性層と、その活性層に接す
る１つないし２つのガイド層と、第２の導電型（例えば
ｐ型）のクラッド層と、第２の導電型（例えばｐ型）の
コンタクト層からなるようにして、かつ活性層と１つな
いし２つのガイド層の厚みを足し合わせた厚さを０．２
５〜０．３５μｍの範囲にすることを主要な特徴とする
。これにより、エッチミラーのわずかな傾きによる反射
率の低下を極小にし、かつ、光の活性層への閉じ込め係
数を大ならしめて、低発振しきい値のエッチミラー半導
体レーザを得ることができる。従来のエッチミラー半導
体レーザは、活性層を２つのクラッド層で挟む単純なグ
ブルヘテロ構造であったため、エッチミラーのわずかな
傾きに対して、著しく反射率が低下し、このため、特性
の悪いエッチミラー半導体レーザしか得られなかった。(4) Structure of the invention (4-1) Differences between the characteristics of the invention and the conventional technology The present invention has the following features:
The layer structure of an etch mirror semiconductor laser includes a substrate of a first conductivity type (for example, n-type), a cladding layer of first conductivity type (for example, n-type), an undoped active layer, and one or more layers in contact with the active layer. It consists of two guide layers, a cladding layer of a second conductivity type (for example, p-type), and a contact layer of a second conductivity type (for example, p-type), and an active layer and one or two guides. The total thickness of the layers is 0.2
The main feature is that the thickness is in the range of 5 to 0.35 μm. This makes it possible to minimize the decrease in reflectance due to a slight tilt of the etch mirror, increase the light confinement coefficient in the active layer, and obtain an etch mirror semiconductor laser with a low oscillation threshold. Conventional etch-mirror semiconductor lasers have a simple double-hetero structure in which the active layer is sandwiched between two cladding layers, so the reflectance decreases significantly when the etch mirror is slightly tilted, resulting in an etch mirror with poor characteristics. Only semiconductor lasers were available.
（４−２）実施例
第１図は、本発明の第１の実施例を説明する断面図であ
って、１はｎ型ｉ ｎ ｐ ａ 仮、２はｎ型１ｎＰク
ラッド層、３はｕｎｄｏｐｅ−１ｎＧａＡｓＰ活性層、
４はｐ型ＩｎＧａＡｓＰガイド層、５はｐ型１ｎＰクラ
’ンド層、６はｐ型１ｎＧａＡｓＰコンタクト層、７は
ｎ型電極、８はｐ型電極、９はエツチング端面（反射鏡
）である。(4-2) Example FIG. 1 is a cross-sectional view for explaining the first example of the present invention, in which 1 is an n-type INPA temporary layer, 2 is an n-type 1nP cladding layer, and 3 is an undoped layer. -1nGaAsP active layer,
4 is a p-type InGaAsP guide layer, 5 is a p-type 1nP ground layer, 6 is a p-type 1nGaAsP contact layer, 7 is an n-type electrode, 8 is a p-type electrode, and 9 is an etched end face (reflector).
活性層３の厚みとガイド層４の厚みを足した厚みが０．
２５〜０．３５μ盾の範囲にある。このような構造にな
っているから、エッチミラーの傾きによる反射率の低下
も小さ（、かつ光の活性層への閉じ込め係数も大で、低
しきい値のエッチミラー半導体レーザを得ることができ
る。この理由は、第４図と第５図の４層構造スラブガイ
ドの端面の傾きに対する反射率低下の様子と、光の活性
層の閉じ込め係数の計算結果により証明できる。第４図
は、活性層の厚みが、０．１ｎの場合を示してあり、Ｌ
はガイド層の厚みを示すパラメータである。同様に第５
図は、活性層の厚みが０．２μｍの場合を示している。The sum of the thickness of the active layer 3 and the thickness of the guide layer 4 is 0.
It is in the range of 25 to 0.35μ shield. Because of this structure, the decrease in reflectance due to the tilt of the etch mirror is small (and the light confinement coefficient in the active layer is large, making it possible to obtain an etch mirror semiconductor laser with a low threshold value). The reason for this can be proven by the decrease in reflectance with respect to the inclination of the end face of the four-layer slab guide shown in Figures 4 and 5, and the calculation results of the light confinement coefficient of the active layer. The case where the layer thickness is 0.1n is shown, and L
is a parameter indicating the thickness of the guide layer. Similarly, the fifth
The figure shows a case where the thickness of the active layer is 0.2 μm.
一般に半導体レーザのしきい値電流工いは次のように書
ける。Generally, the threshold current value of a semiconductor laser can be written as follows.
ここで、Ａは比例係数、ｄは活性層の厚さ、「は閉じ込
め係数、αは吸収係数、！はキャビティ長、Ｒは端面の
反射率である。また、Ｒが大きい程かつ、ｄ／ｒが小さ
い程Ｉいは小さくなる。第４図と第５図の計算結果より
、閉じ込め係数Ｆと、反射率Ｒを両方考慮すると、活性
層の厚さｄとガイド層の厚さもの両方を足し合わせたｄ
＋ｔ、＝０．３μｍが、低しきい値エッチミラーを製作
するのに最も適した層構造であることがわかる。Here, A is the proportionality coefficient, d is the thickness of the active layer, ``is the confinement coefficient, α is the absorption coefficient, ! is the cavity length, and R is the reflectance of the end face. The smaller r is, the smaller I becomes.From the calculation results in Figures 4 and 5, when considering both the confinement coefficient F and reflectance R, both the active layer thickness d and the guide layer thickness can be Added d
It can be seen that +t, = 0.3 μm is the most suitable layer structure for fabricating a low threshold etch mirror.
第２図は第２の実施例を示す断面図であり、１はｎ型１
ｎＰ基板、２はｎ型１ｎＰクラッド層、１３はｎ型ガイ
ド層Ｌ ３はｕｎｄｏｐｅ ｆｎＧａＡｓＰ活性層、■
４はｐ型１ｎＧａＡｓＰガイド層■、５はρ型１ｎＰク
ラッド層、６はＰ型１ｎＧａＡｓＰコンタクト層、７は
ｎ型電極、８はｐ型電極、９はエツチング端面である。FIG. 2 is a cross-sectional view showing the second embodiment, where 1 is an n-type 1
nP substrate, 2 is n-type 1nP cladding layer, 13 is n-type guide layer L, 3 is undoped fnGaAsP active layer,
4 is a p-type 1nGaAsP guide layer (1), 5 is a ρ-type 1nP cladding layer, 6 is a p-type 1nGaAsP contact layer, 7 is an n-type electrode, 8 is a p-type electrode, and 9 is an etched end surface.
、二の実施例では、ガイド層を２つに分け、活性層３の
上と下に配置しである。この場合も活性層３．１３のガ
イド［１，１４のガイド層■の厚みを足し合わせた厚み
が、０．２５〜０．３５μｍの範囲にある。In the second embodiment, the guide layer is divided into two parts and placed above and below the active layer 3. In this case as well, the total thickness of the active layer 3.13 and the guide layer 1 and 14 is in the range of 0.25 to 0.35 μm.
第３図は、第３の実施例の埋め込み型エッチミラー半導
体レーザの斜視図であり、１はｎ型１ｎＰ基板、２はｎ
型１ｎＰクラッド層、３はｕｎｄｏｐｅ−１ｎＧａＡｓ
Ｐ活性層、４はｐ型１ｎＧａＡｓＰガイド層、５はｐ型
ＩｎＰクラッド層、６はｐ型１ｎＧａＡｓＰコンタクト
層、７はｎ型電極、８はｐ型電極、９はエツチング鏡面
、ｌＯはｐ型１ｎＰ埋め込み層、１１はｎ型１ｎＰ埋め
込み層、１２は電流注入領域である。活性層３の厚みと
ガイド層４の厚みを足し合わせた厚さが０．２５〜０．
３５ｐｍの範囲にある。FIG. 3 is a perspective view of the buried etched mirror semiconductor laser of the third embodiment, where 1 is an n-type 1nP substrate, 2 is an n-type
Type 1nP cladding layer, 3 is undoped-1nGaAs
P active layer, 4 is p-type 1nGaAsP guide layer, 5 is p-type InP cladding layer, 6 is p-type 1nGaAsP contact layer, 7 is n-type electrode, 8 is p-type electrode, 9 is etched mirror surface, IO is p-type 1nP A buried layer 11 is an n-type 1nP buried layer, and 12 is a current injection region. The sum of the thickness of the active layer 3 and the thickness of the guide layer 4 is 0.25 to 0.
It is in the range of 35pm.
なお実施例には、ＩｎＧａＡｓＰ／ ｌｎＰ系を例にあ
げたが、ＧａＡｓ／Ａ Ｉ ＧａＡｓ系でも同様であり
、本発明の範囲に含まれる。またｐ型とｎ型をとり換え
た、ｐ型基板半導体レーザでも、同様であり、本発明の
範囲に含まれる。In the examples, an InGaAsP/lnP system is given as an example, but the same applies to a GaAs/A I GaAs system and is included within the scope of the present invention. The same applies to a p-type substrate semiconductor laser in which p-type and n-type are replaced, and this is included within the scope of the present invention.
（５）発明の効果
以上、第４図と第５図の計算結果と式■によって説明し
たように、活性層とそれと接する１つないし２つのガイ
ド層の厚みを足し合わせた厚みが０．２５〜０．３５μ
ｌの範囲にあれば、エツチング端面の傾きによる端面の
反射率の低下も小さく、かつ光の活性層に対する閉じ込
め係数も大であるので、本発明により、ｄ／ｒが小さく
なり、低発振しきい値のエッチミラー半導体レーザが得
られる利点がある。(5) Effects of the invention As explained using the calculation results in FIGS. 4 and 5 and the formula (■), the total thickness of the active layer and one or two guide layers in contact with it is 0.25. ~0.35μ
If it is within the range of 1, the decrease in the reflectance of the etched end face due to the inclination of the etched end face will be small, and the confinement coefficient of light to the active layer will be large. There is an advantage that an etch-mirror semiconductor laser with a high value can be obtained.
図は（頃斜したレーザ端面の反射率特性図である。The figure is a reflectance characteristic diagram of an oblique laser end face.
１・・・ｎ型ｆｎＰ基板、２・・・ｎ型１ｎＰクラッド
層、３ □＝ ｕ型ＩｎＧａＡｓＰ活性層、４・・・ｐ
型１ｎＧａＡｓＰガイド層、５・・・ｐ型１ｎＰクラッ
ド層、６・・・ｐ型！ｎＧａＡｓＰコンタクト層、７・
・・ｎ型電極、８・・・ｐ型電極、９・・・エツチング
反射鏡、１０・・・ｐ型１ ｎ Ｐ １１込み層、１１
・・・ｎ型１ｎＰ埋込み層、１２・・・電流注入領域、
１３−ｎ型１ｎＧａＡｓＰ力イト層１．１４− ｎ型Ｉ
ｎＧａＡｓＰガイド層■。1... n-type fnP substrate, 2... n-type 1nP cladding layer, 3 □= u-type InGaAsP active layer, 4... p
Type 1nGaAsP guide layer, 5...p type 1nP cladding layer, 6...p type! nGaAsP contact layer, 7.
... n-type electrode, 8 ... p-type electrode, 9 ... etching reflector, 10 ... p-type 1 n P 11 containing layer, 11
... n-type 1nP buried layer, 12 ... current injection region,
13-n-type 1nGaAsP power layer 1.14-n-type I
nGaAsP guide layer■.
Claims (2)
ミラー半導体レーザにおいて、 半導体レーザの層構造が、第１導電形の基板と、第１導
電形のクラッド層と、ｕｎｄｏｐｅの活性層と、該活性
層に接する１つないし２つのガイド層と、第２の導電形
のクラッド層と、第２の導電形のコンタクト層とで構成
されてなり、かつ前記活性層の厚さ（ｄ）と前記１つな
いし２つのカイド層の厚さ（ｔ）とが０．２５μｍ≦ｄ
＋ｔ≦０．３５μｍであることを特徴とするエッチミラ
ー半導体レーザ。(1) In an etched mirror semiconductor laser having a reflective mirror surface formed by etching, the layer structure of the semiconductor laser includes a substrate of a first conductivity type, a cladding layer of the first conductivity type, an undoped active layer, and an undoped active layer. It is composed of one or two guide layers in contact with the active layer, a cladding layer of a second conductivity type, and a contact layer of a second conductivity type, and the thickness (d) of the active layer and the The thickness (t) of one or two guide layers is 0.25 μm≦d
An etch mirror semiconductor laser characterized in that +t≦0.35 μm.
部分は、屈折率の小なる絶縁性あるいはｐ−ｎ接合の逆
バイアスによる埋込み層によって埋め込まれていること
を特徴とする特許請求の範囲第１項記載のエッチミラー
半導体レーザ。(2) Claims characterized in that the device has a striped current injection region, and the other parts are buried with an insulating layer having a small refractive index or a buried layer formed by a reverse bias of a p-n junction. The etch mirror semiconductor laser according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16379089A JPH0330381A (en) | 1989-06-28 | 1989-06-28 | Etch mirror semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16379089A JPH0330381A (en) | 1989-06-28 | 1989-06-28 | Etch mirror semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0330381A true JPH0330381A (en) | 1991-02-08 |
Family
ID=15780756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16379089A Pending JPH0330381A (en) | 1989-06-28 | 1989-06-28 | Etch mirror semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0330381A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0681584U (en) * | 1993-05-17 | 1994-11-22 | 株式会社藤商事 | Ball supply equipment for ball game machines |
| US5627851A (en) * | 1995-02-10 | 1997-05-06 | Ricoh Company, Ltd. | Semiconductor light emitting device |
| WO2002103866A1 (en) * | 2001-06-15 | 2002-12-27 | Nichia Corporation | Semiconductor laser element, and its manufacturing method |
| KR100941028B1 (en) * | 2008-02-28 | 2010-02-05 | 효림산업주식회사 | Screen basket of traveling water screen device |
-
1989
- 1989-06-28 JP JP16379089A patent/JPH0330381A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0681584U (en) * | 1993-05-17 | 1994-11-22 | 株式会社藤商事 | Ball supply equipment for ball game machines |
| US5627851A (en) * | 1995-02-10 | 1997-05-06 | Ricoh Company, Ltd. | Semiconductor light emitting device |
| WO2002103866A1 (en) * | 2001-06-15 | 2002-12-27 | Nichia Corporation | Semiconductor laser element, and its manufacturing method |
| KR100941028B1 (en) * | 2008-02-28 | 2010-02-05 | 효림산업주식회사 | Screen basket of traveling water screen device |
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