JPS5992588A - Mono-axial mode semiconductor laser - Google Patents
Mono-axial mode semiconductor laserInfo
- Publication number
- JPS5992588A JPS5992588A JP57202670A JP20267082A JPS5992588A JP S5992588 A JPS5992588 A JP S5992588A JP 57202670 A JP57202670 A JP 57202670A JP 20267082 A JP20267082 A JP 20267082A JP S5992588 A JPS5992588 A JP S5992588A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oscillation
- reflectance
- light guide
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光通信用等に用いられる単一軸モード発振をす
る単一軸モード発振半導体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a single-axis mode oscillation semiconductor laser that oscillates in a single-axis mode and is used for optical communications and the like.
通常、臂開面を反射面とする７アプリペロ一共振器半導
体レーザは１発振軸モードが複数本あって安定せずまた
その波長の温度変化が大きいという欠点があり友、この
欠点は臂開面の代りに半導体レーザ内部に周期構造を形
成し分布帰還型（ＤＦＢ）半導体レーザあるいは分布ブ
ラッグ反射器型（ＤＢＲ）半導体レーザとすることで解
決しうる。その代りにこれらＤＦＢ半導体レーザやＤＢ
Ｒ半導体レーザでは発振可能温度が高くない９発振閾値
電流が大きい、微分童子効率が小さいなどの問題点があ
った。Normally, a 7-apple-Perot single-cavity semiconductor laser that uses the arm opening as the reflecting surface has the disadvantage that it has multiple oscillation axis modes, making it unstable and that its wavelength varies greatly with temperature. Instead, this problem can be solved by forming a periodic structure inside the semiconductor laser to create a distributed feedback (DFB) semiconductor laser or a distributed Bragg reflector (DBR) semiconductor laser. Instead, these DFB semiconductor lasers and DB
The R semiconductor laser has problems such as a high oscillation temperature, a large oscillation threshold current, and a low differential Doji efficiency.
従来のＤＢＲ半導体レーザにおける対向する２つの分布
ブラッグ反射器もしくは対向する１つの臂開面と分布ブ
ラッグ反射器との光共振器の構成において、この分布ブ
ラッグ反射器の実効反射率Ｒは１分布ブラッグ反射器の
設けられている光ガイドの結合係数にとその長さＬを用
いて１次式で与えられることが知られている。In a conventional DBR semiconductor laser in which an optical resonator is configured with two opposing distributed Bragg reflectors or one opposing arm opening and a distributed Bragg reflector, the effective reflectance R of the distributed Bragg reflector is 1 distributed Bragg. It is known that the coupling coefficient of a light guide provided with a reflector is given by a linear equation using its length L.
Ｒ＝ ｔａｎｈ” （ｋＬ ） −・−
・（１）この式によれば、実効反射率１ｔはｋＬが十分
太きければ１に十分近くなるので、ＤＢ几半導体レーザ
はファプリペロー共振器型半導体レーザと同等ないしそ
れ以上の効率を有することが期待されていた。しかし１
発明者の実験的検討によれば１分布ブラッグ反射器の反
射率はＬｉ太キくシてもある程度以上大きくできないこ
とが判明した（結合係数にの方はあまり大きくできない
）、これは分布ブラッグ反射器の不均一性等による散乱
損失や結合係数にのゆらぎの友めと考られ、現状の技術
レベルでは克服困難と考えられる。R= tanh” (kL) −・−
・(1) According to this formula, the effective reflectance 1t will be sufficiently close to 1 if kL is sufficiently thick, so the DB laser diode can have an efficiency equal to or higher than that of the Fabry-Perot cavity semiconductor laser. It was expected. But 1
According to the inventor's experimental study, it was found that the reflectance of a single-distribution Bragg reflector cannot be increased beyond a certain level even if the Li thickness is increased (the coupling coefficient cannot be increased very much); this is due to distributed Bragg reflection. This is thought to be due to scattering loss due to non-uniformity of the device and fluctuations in the coupling coefficient, and is thought to be difficult to overcome at the current technological level.
本発明の目的は、これらの問題点を解決し５発振可能部
度が高く１発振閾値電流が比較的小さく。An object of the present invention is to solve these problems, to achieve a high 5-oscillation capability and a relatively small 1-oscillation threshold current.
微分量子効率が通常の７アブリペロ一共振器半導体レー
ザ並に大きい単一軸モードレーザを提供することにある
。The object of the present invention is to provide a single-axis mode laser whose differential quantum efficiency is as high as that of a normal 7 Abry-Perot single-cavity semiconductor laser.
本発明の単一軸モード半導体レーザけ、半導体ウェーハ
上に成長され少なくとも活性層を含む光増幅複合ガイド
と、この光増幅複合ガイドと光学的に結合されその内部
に導波される光の波長の１の整数倍の周期を有する凹凸
の周期構造を含む分布反射型光ガイドと、前記光増幅複
合ガイドの軸方向にほぼ垂直な境界面に形成され九反射
膜とを含んで構成され、前記分布反射型光ガイドの前記
周期構造の結合係数にと長さＬで定められる実効反射率
Ｔｈ１（ｌから５（ｌの間に定めたことを特徴とする。The single-axis mode semiconductor laser according to the present invention includes an optical amplification composite guide grown on a semiconductor wafer and including at least an active layer, and a wavelength of light that is optically coupled to the optical amplification composite guide and guided into the optical amplification composite guide. A distributed reflection type light guide including a periodic structure of concave and convex portions having a period that is an integral multiple of The effective reflectance Th1 (l) determined by the coupling coefficient of the periodic structure of the molded light guide and the length L is set between Th1 (l) and 5 (l).
本発明の発明者は１分布ブラッグ反射器の反射率を小さ
くして使用し代りに対向する１つの伸開面の反射率を上
げることが、ＤＢＲ半導体レーザの効率化に最も有効で
あることを見出した。例えば１分布ブラッグ反射器の反
射率を設計上３０チ。The inventor of the present invention found that using a monodistribution Bragg reflector with a lower reflectance and instead increasing the reflectance of one opposing extended plane is most effective in increasing the efficiency of a DBR semiconductor laser. I found it. For example, the reflectance of a single distribution Bragg reflector is designed to be 30 cm.
対向する伸開面の反射率を１００チとしたＤＢＲ半導体
レーザは１分布ブラッグ反射器の反射率を設計上１００
チ、伸開面の反射率を３０チとした場合よりはるかに良
い特性を示した。本発明の単一軸モード発振半導体レー
ザにおいては、発振可能温度が高く２発振閾値電流が比
較的小さく、微分量子効率が通常のファプリペロー共振
器半導体し−ザ並に大さいという特徴がある。A DBR semiconductor laser with a reflectance of 100 on the opposing extended plane has a reflectance of 100 on the one-distribution Bragg reflector by design.
However, it showed much better characteristics than when the reflectance of the expanded plane was set to 30 degrees. The single-axis mode oscillation semiconductor laser of the present invention has a high oscillation temperature, a relatively small two-oscillation threshold current, and a differential quantum efficiency as high as that of a typical Farpry-Perot resonator semiconductor laser.
次に図面を用いて本発明の詳細な説明する。Next, the present invention will be explained in detail using the drawings.
第１図は本発明の実施例の単一軸モード半導体レーザの
横断面図、第２図は第１図のウエーノ飄高位部分の縦断
面図、第３図は第１図のウエーノ・低位部分の縦断面図
である。（１００）面方位のｎ −ＩｎＰ ウェーハ
５０には高部５１と低部５２とがあり、その上にそれぞ
れ第１の光ガイド層１．第１のクラ゛ツド層２．第２の
光ガイド層３．活性層４、第２のクラッド層５．埋め込
み層６．キャップ層７が順次エピタキシャル成長されて
いる。第１の元ガイド層１は禁止帯波長１．１５μｍの
ｎ −１ｎ Ｏ，８２Ｇ ａ ６．１Ｂ Ａ Ｓ （，
４０Ｐ ６．６０の４元混晶、第１のクラッド層２はｎ
−ＩｎＰ、第２の光ガイド層３は禁止帯波長１．１Ｂ、
ａｍの”−１ｎ ｏ、Ｂ２ Ｇ ｎ ｏ、ｔａ人’ ０
，４０ＰＯ，６０の４元混晶、活性層４は発振波長１．
３０μｍの” ０．７２ ＧａＯ，２１８”０．１１１
ＰＯ，ａｌｌの４元混晶・第２のクラッド層５はｐ−
ＩｎＰ、埋め込み層６はｐ −１ｎ Ｐ。FIG. 1 is a cross-sectional view of a single-axis mode semiconductor laser according to an embodiment of the present invention, FIG. 2 is a longitudinal cross-sectional view of a high-level portion of the Ueno in FIG. FIG. The (100)-oriented n-InP wafer 50 has a high portion 51 and a low portion 52, on which are respectively first light guide layers 1. First cloud layer 2. Second light guide layer 3. Active layer 4, second cladding layer 5. Buried layer 6. A cap layer 7 is epitaxially grown in sequence. The first original guide layer 1 is n −1n O,82G a 6.1B A S (,
40P 6.60 quaternary mixed crystal, first cladding layer 2 is n
-InP, the second optical guide layer 3 has a forbidden wavelength of 1.1B,
am'-1no, B2 Gno, ta person' 0
, 40PO, 60, and the active layer 4 has an oscillation wavelength of 1.
30μm" 0.72 GaO, 218" 0.111
The quaternary mixed crystal second cladding layer 5 of PO,all is p-
InP, the buried layer 6 is p-1nP.
キャップ層７は禁止帯波長１゜２０μｍのｐ−１ｎ ｏ
、ｙｓ”０，２２ ＡＳＯ，４８ＰＯ１５２の４元混晶
である。第２の光ガイド層３と活性層４け光増幅複合ガ
イド８を構５−
成する。The cap layer 7 is p-1no with a forbidden wavelength of 1°20 μm.
, ys"0, 22 ASO, 48PO152. The second light guide layer 3 and the active layer 4 constitute a light amplification composite guide 8.
このウェーハ５０の高部５１には、各層１〜７をエピタ
キシャル成長させる前に、第１の光ガイド層１の内部を
伝搬する光の波長（第１の光ガイド層１０等価屈折率を
”督１ 自由空間の光の波長をλ０としたときλＯ／
ｎ＠ｑ、）の１／２である周期１８６０Ｘ、深さ８００
人の周期構造９０が（ｏＴｘ）方向に形成されている。Before each layer 1 to 7 is epitaxially grown on the high part 51 of the wafer 50, the wavelength of the light propagating inside the first light guide layer 1 (the equivalent refractive index of the first light guide layer 10) is measured. When the wavelength of light in free space is λ0, λO/
Period 1860X, which is 1/2 of n@q, ), depth 800
A human periodic structure 90 is formed in the (oTx) direction.
第１の光ガイド層１と第１のクラッド層２０合計の厚み
は高部５１と低部５２との高低差にほぼ等しくしである
ので、第２の光ガイド層３の高さは第１の光ガイド層１
の高さとほぼ等しく、まｔ高部５１から低部５２に変わ
る領域の成長層はう丁いので、第１の光ガイド層１と第
２の光ガイド層３は光学的に高い効率で結合されている
。Since the total thickness of the first light guide layer 1 and the first cladding layer 20 is approximately equal to the height difference between the high part 51 and the low part 52, the height of the second light guide layer 3 is equal to the height of the first light guide layer 3. light guide layer 1
The height of the growth layer is approximately equal to the height of the area where the height changes from the high part 51 to the low part 52, so the first light guide layer 1 and the second light guide layer 3 are optically coupled with high efficiency. has been done.
レーザ発振を行うメサストライプ部６０の両脇にはｐ−
ＩｎＰの第１のブロック層９とｎ−ＩｎＰの第２のブロ
ック層１０とが成長されている。キャップ層６の上には
、低部５２の上のメサストライプ部６０の上を除いて絶
縁用の５ｉｓＮａ膜１１が６一
形成され、さらに全面にＴｉ−Ｐｔの正電極１２が形成
されている。このため正電極１２より電流が注入される
と低部５２の上のメサストライプ部６０の活性層４のみ
が励起される。On both sides of the mesa stripe section 60 for laser oscillation, p-
A first blocking layer 9 of InP and a second blocking layer 10 of n-InP are grown. On the cap layer 6, an insulating 5isNa film 11 is formed except on the mesa stripe part 60 above the low part 52, and furthermore, a Ti--Pt positive electrode 12 is formed on the entire surface. . Therefore, when a current is injected from the positive electrode 12, only the active layer 4 in the mesa stripe portion 60 above the low portion 52 is excited.
第１．第２の襞間面７０．８０けメサストライプ部６０
と直交する（０１１） 面であり、第１の襞間面７０
には反射率１チ以下の反射防止膜７１゜第２の襞間面８
０には反射率約１００’％の反射膜８１が形成されてい
る。この反射膜８１けＴｉ０ｚと５ｉＯｚとを１／４波
長の厚嘔で交互に多層形成（例えば、１９層）シ友もの
であ凱反射防止膜７１けＳｉＯ’！ｒｌ／４波長の厚さ
で１層形成したものである。周期構造９０の結合係数に
は１３ｃｍｍ”であり、その長さＬが１５０μｍであっ
て、実効反射率は約２０チであった。また、ウェーハ５
０の下側にはＡｕ−Ｇｅ−Ｎｉの負電極１３が形成され
ている。1st. Second interfold surface 70.80 degrees mesa stripe portion 60
(011) plane orthogonal to the first interfold plane 70
has an antireflection film 71° with a reflectance of 1 inch or less and a second interfold surface 8.
A reflective film 81 with a reflectance of approximately 100'% is formed on the surface of the reflective film 81. This reflective film consists of 81 layers of Ti0z and 5iOz, alternately formed in multilayers (for example, 19 layers) with a thickness of 1/4 wavelength. One layer is formed with a thickness of rl/4 wavelength. The coupling coefficient of the periodic structure 90 was 13 cm'', the length L was 150 μm, and the effective reflectance was about 20 cm.
A negative electrode 13 made of Au-Ge-Ni is formed below the electrode 0.
以上の構成の実施例の動作を説明する。The operation of the embodiment having the above configuration will be explained.
波長１．３００μｍの光は光増幅複合ガイド８とそれに
結合した第１の光ガイド層１の内會伝搬するが２反射面
８１と周期構造９０とにより共振器が構成されているの
で、電流の注入を増加させると発振を開始する。この周
期構造９０による分布ブラッグ反射器は反射率２０チで
あるので約８０％の光が反射防止膜７１を通って出射す
る。この反射防止膜７１の残留反射率け１チ以下と小さ
いので７アプリペローモードが発振することはシい。Light with a wavelength of 1.300 μm propagates within the optical amplification composite guide 8 and the first optical guide layer 1 coupled thereto, but since a resonator is constituted by the reflecting surface 81 and the periodic structure 90, the current When the injection is increased it starts to oscillate. Since the distributed Bragg reflector made of the periodic structure 90 has a reflectance of 20 degrees, about 80% of the light passes through the antireflection film 71 and is emitted. Since the residual reflectance of the anti-reflection film 71 is as small as 1 inch or less, the 7-application-Perot mode is unlikely to oscillate.
次にこの実施例の単一軸モード半導体レーザの作製工程
を説明する。まず、ｎ−ＩｎＰウェーハ５０にポジ型ホ
トレジストを塗布し＆Ｈｅ−Ｃｄレーザのａ２５ｏＸの
発振光を約６１°の角度で干渉させる三光束干渉露光法
により＜ｏＴｘ＞方向に沿った周期１８６０Ｘのホトレ
ジストパターンヲ形成し。Next, the manufacturing process of the single-axis mode semiconductor laser of this example will be explained. First, a positive photoresist is coated on the n-InP wafer 50, and a photoresist pattern with a period of 1860X along the <oTx> direction is formed using a three-beam interference exposure method in which the a25oX oscillation light of the He-Cd laser interferes at an angle of approximately 61°. Formed.
ついでＨＣＱ、とＨ２Ｏの混合エッチャントによりウェ
ーハ５０に周期構造９０を転写する。次に、ホトリソグ
ラフィーとエツチングにより周期構造９０の格子方向に
そって幅３００ ｆｉｍの溝を２００μｍ間隔で形成し
て低部ｆｓ２ｔ−作る。Next, the periodic structure 90 is transferred onto the wafer 50 using a mixed etchant of HCQ and H2O. Next, grooves each having a width of 300 fim are formed at intervals of 200 μm along the lattice direction of the periodic structure 90 by photolithography and etching to form a lower portion fs2t-.
次に、第１のガイド層１から第２のクラッド層５までを
成長させ、その後＜０１１＞方向にホトリソグラフィー
とエツチングにより幅約２μｍのメサストライプ６０を
作るように２本の溝をほろ。Next, the first guide layer 1 to the second cladding layer 5 are grown, and then two grooves are formed in the <011> direction by photolithography and etching to form a mesa stripe 60 with a width of about 2 μm.
次に、再びエピタキシャル成長法により第１．第２のブ
ロック層９．１０．埋め込み層６．中キヤツプ７金成長
させる。正電極１２と負電極１３ｆ：形成した後高部５
１の中央及び低部５２の中央を襞間してバーを作製する
。次にそのバーの高部５１側に反射防止膜７１．低部５
２側に反射膜８１を形−成しｔ後、レーザを１つづつ切
り出して作製が完了する。Next, the first layer is grown again using the epitaxial growth method. Second block layer 9.10. Buried layer 6. Grow medium cap 7 gold. Positive electrode 12 and negative electrode 13f: formed rear high part 5
1 and the center of the lower part 52 to create a bar. Next, an anti-reflection film 71 is placed on the high part 51 side of the bar. lower part 5
After forming the reflective film 81 on the second side, the lasers are cut out one by one to complete the fabrication.
以上の作製工程において、２本の溝を第１．第２のブロ
ック層で埋め込む工程は電流狭窄と光閉じ込めを達成す
るための手段であり、北村らの特許出願特願昭５６−１
６６６６６号と同一の工程である。In the above manufacturing process, two grooves are formed in the first groove. The process of embedding with the second block layer is a means to achieve current confinement and optical confinement, and the patent application filed by Kitamura et al.
This is the same process as No. 66666.
本発明の単一軸モード発振半導体レーザにおいては、レ
ーザ発振を生じさせる光共振器として。In the single-axis mode oscillation semiconductor laser of the present invention, as an optical resonator that generates laser oscillation.
１に近い反射率を有する反射膜８１と結合係数にと長さ
Ｌで定められる実効反射率が１０チから５０チの間に定
めた分布ブラッグ反射器である周期構造９０を用いてい
るので、現状の不十分な作９−
裏技術による不完全な周期構造を使用しても７アブリベ
ロ一共振器半導体レーザと同等以上の効率を実現するこ
とができる。この実施例においては、１次の周期構造を
用いたが、２次の周期構造を用い友試作でも室温連続発
振が可能であっｔ。Since the reflective film 81 having a reflectance close to 1 and the periodic structure 90 which is a distributed Bragg reflector with an effective reflectance determined by the coupling coefficient and the length L between 10 and 50 inches are used, Current Insufficient Work 9 - Even if an incomplete periodic structure is used using a secret technique, it is possible to achieve an efficiency equal to or higher than that of a seven-abbrero one-cavity semiconductor laser. In this example, a first-order periodic structure was used, but continuous oscillation at room temperature is also possible using a second-order periodic structure.
第４図、第５図はこの実施例の単一軸モード半導体レー
ザの分布ブラッグ反射器の反射率と閾値電流及び微分量
子効率の特性図を示す。この図の反射率は測定した結合
係数にと長さＬから式（１）に基いて求めｔ値である２
反射率が１０％以下では閾値電流が非常に大きくなり実
用的ではない。また１反射率が５０ｔｓ以上の領域では
閾値電流の低減にはあまりきかず逆に微分量子効率の低
減が著しい。したがって、実用的な反射率は１０チから
５０ｔｓの範囲にあることが明らかとなる。FIGS. 4 and 5 show characteristic diagrams of the reflectance, threshold current, and differential quantum efficiency of the distributed Bragg reflector of the single-axis mode semiconductor laser of this embodiment. The reflectance in this figure is calculated from the measured coupling coefficient and length L based on equation (1) and is the t value 2
When the reflectance is less than 10%, the threshold current becomes extremely large and is not practical. Further, in a region where the 1 reflectance is 50 ts or more, the threshold current is not reduced much, and on the contrary, the differential quantum efficiency is significantly reduced. Therefore, it is clear that the practical reflectance is in the range of 10ts to 50ts.
以上５本発明の実施例について説明したが、ｎ −１ｎ
Ｐウエーハ５１はｐ型のものであってもよいが。Although the five embodiments of the present invention have been described above, n −1n
The P wafer 51 may be of p type.
この場合各層の導電型は実施例の導電型と全て逆にする
ことが必要である。ｔｔ、実施例の結晶構成はＩｎＰ及
びＩｎＧａＡｓＰ以外のものであってもよ−１〇−
く、その発振波長も１．３０μｍに限定されることなく
他の波長でもよいことは当然である。さらに。In this case, the conductivity type of each layer must be reversed to that of the embodiment. It goes without saying that the crystal structure of the embodiment may be other than InP and InGaAsP, and the oscillation wavelength is not limited to 1.30 μm and may be any other wavelength. moreover.
反射膜８１の形成されている第１の襞間面８０はエツチ
ングによりて形成してもよい。また反射防止膜７１の代
りに実効的な反射率がＯとなるように傾けられた面をエ
ツチング法等で形成してもよい。ただし、その場合はそ
の傾き面の反射率が０でないので光出力はこの実施例の
場合より当然域することになる。The first interfold surface 80 on which the reflective film 81 is formed may be formed by etching. Further, instead of the antireflection film 71, a surface inclined so that the effective reflectance is O may be formed by etching or the like. However, in that case, since the reflectance of the inclined surface is not 0, the optical output will naturally be in a higher range than in this embodiment.
第１図、第２図、第３図は本発明の一実施例の縦断面図
、高位部分の横断面図、低位部分の横面図、第４図、第
５図はこの実施例の分布ブラッグ反射器の反射率と閾値
電流および微分量子効率の関係を示す特性図である。図
において
１・・・・・・光ガイド層、２・・・・・・クラッド層
、３・・・・・・光ガイド層、４・・・・・！活性層、
訃・・・・・クラッド層。
６・・・・・・埋め込み層、７・・・・・・キャップ層
、８・・・・・・光増幅複合ガイド層、９．１０・・・
・・・電流ブロック層。
１１・・・・・・絶縁層、１２・・・・・・正電極、１
３・・・・・・負電極、５Ｑ・・・・・・ウェーハ、５
１・・・・・・高部、５２・旧・・低部、６０・・・・
・・メサストライプ部、７０．８０・・・・・・襞間面
、７１・・・・・・反射防止膜％ ８１・・・・・・反
射膜。
９０・・・・・・周期構造
である。Figures 1, 2, and 3 are longitudinal cross-sectional views of one embodiment of the present invention, a cross-sectional view of a high-level portion, and a horizontal cross-sectional view of a low-level portion, and Figures 4 and 5 are distributions of this embodiment. FIG. 2 is a characteristic diagram showing the relationship between reflectance, threshold current, and differential quantum efficiency of a Bragg reflector. In the figure, 1... light guide layer, 2... cladding layer, 3... light guide layer, 4...! active layer,
Death... cladding layer. 6... Burying layer, 7... Cap layer, 8... Optical amplification composite guide layer, 9.10...
...Current blocking layer. 11... Insulating layer, 12... Positive electrode, 1
3...Negative electrode, 5Q...Wafer, 5
1...high part, 52, old...low part, 60...
... Mesa stripe portion, 70.80 ... Interfold surface, 71 ... Antireflection film% 81 ... Reflection film. 90... It is a periodic structure.
Claims (1)
増幅複合ガイドと、この光増幅複合ガイドと光学的に結
合されその内部に導波される光の波長の１／２の整数倍
の周期を有する凹凸の周期構造を含む分布反射型光ガイ
ドと、前記光増幅複合ガイドの軸方向に＃１は垂直な境
界面に形成された反射膜とを含み、前記分布反射型光ガ
イドの前−記周期構造の結合係数と長さで定められる実
効反射率１に１０％から５０チの間に定めたことを特徴
とする単一軸モード半導体レーザ。an optical amplification composite guide grown on a semiconductor wafer and including at least the entire active layer; and an optical amplification composite guide that is optically coupled to the optical amplification composite guide and has a period that is an integral multiple of 1/2 of the wavelength of the light guided inside the optical amplification composite guide. A distributed reflection type light guide including a periodic structure of unevenness, and a reflection film formed on a boundary surface #1 perpendicular to the axial direction of the optical amplification composite guide, and the first period of the distributed reflection type light guide. A single-axis mode semiconductor laser characterized in that an effective reflectance of 1 determined by the coupling coefficient and length of the structure is set between 10% and 50 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57202670A JPS5992588A (en) | 1982-11-18 | 1982-11-18 | Mono-axial mode semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57202670A JPS5992588A (en) | 1982-11-18 | 1982-11-18 | Mono-axial mode semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5992588A true JPS5992588A (en) | 1984-05-28 |
Family
ID=16461201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57202670A Pending JPS5992588A (en) | 1982-11-18 | 1982-11-18 | Mono-axial mode semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5992588A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61229385A (en) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Compound semiconductor device |
| JPS6316692A (en) * | 1986-07-08 | 1988-01-23 | Nec Corp | Distributed feedback semiconductor laser |
| US5111475A (en) * | 1990-01-02 | 1992-05-05 | At&T Bell Laboratories | Analog optical fiber communication system, and laser adapted for use in such a system |
| US5285468A (en) * | 1992-07-17 | 1994-02-08 | At&T Bell Laboratories | Analog optical fiber communication system, and laser adapted for use in such a system |
-
1982
- 1982-11-18 JP JP57202670A patent/JPS5992588A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61229385A (en) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Compound semiconductor device |
| JPS6316692A (en) * | 1986-07-08 | 1988-01-23 | Nec Corp | Distributed feedback semiconductor laser |
| US5111475A (en) * | 1990-01-02 | 1992-05-05 | At&T Bell Laboratories | Analog optical fiber communication system, and laser adapted for use in such a system |
| US5285468A (en) * | 1992-07-17 | 1994-02-08 | At&T Bell Laboratories | Analog optical fiber communication system, and laser adapted for use in such a system |
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