JPH03268403A - Manufacture of resistor paste - Google Patents
Manufacture of resistor pasteInfo
- Publication number
- JPH03268403A JPH03268403A JP2068805A JP6880590A JPH03268403A JP H03268403 A JPH03268403 A JP H03268403A JP 2068805 A JP2068805 A JP 2068805A JP 6880590 A JP6880590 A JP 6880590A JP H03268403 A JPH03268403 A JP H03268403A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- octylate
- carboxylic acid
- resistor
- resistor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 8
- -1 terpenoid carboxylic acid Chemical class 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000007639 printing Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 125000000962 organic group Chemical group 0.000 abstract description 2
- 150000003304 ruthenium compounds Chemical class 0.000 abstract description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 23
- 239000002904 solvent Substances 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- SGLXWMAOOWXVAM-UHFFFAOYSA-L manganese(2+);octanoate Chemical compound [Mn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O SGLXWMAOOWXVAM-UHFFFAOYSA-L 0.000 description 2
- 239000000025 natural resin Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 241000220259 Raphanus Species 0.000 description 1
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000003983 crown ethers Chemical class 0.000 description 1
- VAROLYSFQDGFMV-UHFFFAOYSA-K di(octanoyloxy)alumanyl octanoate Chemical compound [Al+3].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O VAROLYSFQDGFMV-UHFFFAOYSA-K 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000005609 naphthenate group Chemical group 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子機器等に使用される抵抗器の抵抗体用ペー
ストの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a resistor paste for resistors used in electronic equipment and the like.
従来の技術
天然樹脂の主要な成分であるテルペノイド類に属するカ
ルボン酸やそのエステル、もしくはその組成物との混合
物は、フェスの形で塗料としてまた印刷用インキにビヒ
クルとして含有される等、商業的に広く流通し利用され
ている。従来これらのテルペノイド系カルボン酸組成物
と少な（とも構造中にルテニウムを含む化合物を配合し
、溶剤を添加して７０〜８０℃で溶解させることにより
、抵抗体用ペーストを製造してきた。第２図は、このよ
うにして製造したペーストを用いてスクリーン印刷によ
り抵抗体形成を行った場合の抵抗体の断面図である。第
２図において、絶縁基板４上にアンダーグレーズ３を形
成し、このアンダーグレーズ３の両側にＡｇ−Ｐｄ１を
極２を形成し、このアンダーグレーズ３およびＡｇ −
Ｐｄ電極２の一部に抵抗体膜ｌを形成した抵抗体を示し
ている。Conventional technology Carboxylic acids belonging to terpenoids, which are the main components of natural resins, their esters, or mixtures with their compositions are used commercially as paints in the form of festivals, and as vehicles in printing inks. It is widely distributed and used. Conventionally, pastes for resistors have been produced by blending these terpenoid carboxylic acid compositions with a small amount of a compound containing ruthenium in the structure, adding a solvent, and dissolving at 70 to 80°C. The figure is a cross-sectional view of a resistor formed by screen printing using the paste produced in this way.In Figure 2, an underglaze 3 is formed on an insulating substrate 4, Ag-Pd1 is formed as poles 2 on both sides of the underglaze 3, and this underglaze 3 and Ag-
A resistor is shown in which a resistor film 1 is formed on a part of a Pd electrode 2.
発明が解決しようとする課題
しかしながら上記の従来の方法では、印刷時にペースト
がスクリーン版のメツシュを通過する際に生しる泡が原
因となって、第２図に示すように抵抗体膜１に凹凸１ａ
が発生しムラのない平滑な抵抗体膜面を得ることが困難
であり、その結果得られる同一パターンの抵抗体の抵抗
値のバラツキがＣＶ＝２０％程度と大きいという課題が
あった。Problems to be Solved by the Invention However, in the above conventional method, bubbles generated when the paste passes through the mesh of the screen plate during printing cause damage to the resistor film 1 as shown in FIG. Unevenness 1a
occurs, making it difficult to obtain a smooth resistor film surface without unevenness, and as a result, there is a problem in that the variation in resistance value of the resulting resistor with the same pattern is as large as CV=20%.
ここにいうＣ■とは抵抗値の母集団の標準偏差を平均値
で割ったものである。C■ here is the standard deviation of the population of resistance values divided by the average value.
本発明は以上のような従来の欠点を除去するもので、平
滑な抵抗体膜面を得ることにより、抵抗値のバラツキの
少ない抵抗体用ペーストを提供しようとするものである
。The present invention aims to eliminate the above-mentioned conventional drawbacks, and to provide a resistor paste with less variation in resistance value by obtaining a smooth resistor film surface.
課題を解決するための手段
上記課題を解決するために本発明は、少なくとも構造中
にルテニウムを含む化合物とテルペノイド系カルボン酸
の組成物を含む溶液を配合した後、１４０℃以上に加熱
することにより、溶解・反応させる方法でペーストを製
造するものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a method of combining a solution containing at least a compound containing ruthenium in its structure and a composition of a terpenoid carboxylic acid, and then heating it to 140°C or higher. The paste is manufactured by a method of dissolving and reacting.
作用
上記方法とすることにより、ペースト中のルテニウム化
合物とテルペノイド系カルボン酸の＆ｌｌ成物との間で
、相互の有機基の交換反応が起こり、カルボン酸特有の
性質である分子間水素結合が断ち切られる。これにより
ペーストの粘着性が減少し、印刷時のメンシュ通過によ
っても泡が発生すること・なく被印刷物上に移されるよ
うになる。したがって非常に平滑でムラのない抵抗体膜
が得られ、抵抗値のバラツキが減少するものである。Effect By using the above method, a mutual exchange reaction of organic groups occurs between the ruthenium compound in the paste and the terpenoid carboxylic acid product, and the intermolecular hydrogen bond, which is a characteristic of carboxylic acid, is broken. It will be done. This reduces the stickiness of the paste and allows it to be transferred onto the printing substrate without generating bubbles when it passes through the mensch during printing. Therefore, a very smooth and even resistor film can be obtained, and variations in resistance values can be reduced.
実施例 以下に本発明の実施例について説明する。Example Examples of the present invention will be described below.
（実施例１）
第１表の試料１４１１〜９に示すとおりに、オクチル酸
ルテニウムとオクチル酸チタンを配合して１０ｇとじン
容荊１００ｇを加えたものをつくり、これに２量化率８
０％ロジン１００ｇを添加して、第１表に示す各温度で
３０分間加熱し、抵抗体用ペーストを製造した。このペ
ーストを乳剤厚み１５μｍ、２５０メツシユのスクリー
ン版を用いてグレーズドアルミナ基板上に１０閣Ｘ Ｌ
ｏｗの正方形状パターンにスクリーン印刷を行った。こ
の被印刷物を１５０℃で１０分間乾燥し、７００℃で１
０分間焼成した後評価を行った。評価は印刷時の泡立ち
のを無、焼成後の抵抗体膜の平滑性、および抵抗値のバ
ラツキで行い、その結果は第１表に示すとおりである。(Example 1) As shown in Samples 1411 to 9 in Table 1, ruthenium octylate and titanium octylate were blended to make a product in which 10 g of ruthenium and 100 g of radish were added, and the dimerization rate was 8.
100 g of 0% rosin was added and heated for 30 minutes at each temperature shown in Table 1 to produce a resistor paste. This paste was spread onto a glazed alumina substrate using a 250-mesh screen plate with an emulsion thickness of 15 μm.
Screen printing was performed on a square pattern of ow. This printing substrate was dried at 150°C for 10 minutes, and then dried at 700°C for 10 minutes.
Evaluation was performed after baking for 0 minutes. Evaluations were made based on the absence of bubbles during printing, the smoothness of the resistor film after firing, and the variation in resistance value, and the results are shown in Table 1.
第１図に上記方法により製造した抵抗体を示す。FIG. 1 shows a resistor manufactured by the above method.
第１図において、５はアルミナなどからなる絶縁基板で
、この絶縁基板５上にはアンダーグレーズ６が形成され
、このアンダーグレーズ６の両側にＡｇ−Ｐｄ電極７を
形成し、このアンダーグレーズ６、Ａｇ −Ｐｄ電極７
の上面の一部に上記ペーストによる抵抗体膜８を形成し
て構成されている。In FIG. 1, reference numeral 5 denotes an insulating substrate made of alumina or the like. An underglaze 6 is formed on this insulating substrate 5, and Ag-Pd electrodes 7 are formed on both sides of this underglaze 6. Ag-Pd electrode 7
A resistor film 8 made of the above paste is formed on a part of the upper surface of the resistor.
（以下余白）
（実施例２〕
第２表のＮＱＩＯ〜１８に示すとおりに、オクチル酸ル
テニウムとオクチル酸マンガンを配合して１０ｇとし溶
剤１００ｇを加えたものをつくり、以下実施例１と同様
な操作・評価を行い、その結果は第２表に示すとおりで
ある。(Left below) (Example 2) Ruthenium octylate and manganese octylate were mixed to make 10 g as shown in NQIO-18 in Table 2, and 100 g of solvent was added. The operation and evaluation were carried out, and the results are shown in Table 2.
（以下余白）
（実施例３）
第３表の試料随１９〜２７に示すとおりに、オクチル酸
ルテニウムとオクチル酸コバルトを配合して１０ｇとし
溶剤１００ｇを加えたものをつくり、以下実施例１と同
様な操作・評価を行い、その結果は第３表に示すとおり
である。(Leaving space below) (Example 3) As shown in samples 19 to 27 of Table 3, ruthenium octylate and cobalt octylate were mixed to make 10 g and 100 g of solvent was added, and as shown in Example 1 below. Similar operations and evaluations were performed, and the results are shown in Table 3.
（以下余白）
（実施例４）
第４表の試料阻２８〜３６に示すとおりに、オクチル酸
ルテニウムとオクチル酸コバルト・オクチル酸マンガン
を配合してｌｏｇとし溶剤１００ｇを加えたものをつく
り、以下実施例１と同様な操作・評価を行い、その結果
は第４表に示すとおりである。(Left below) (Example 4) Ruthenium octylate, cobalt octylate, and manganese octylate were blended as shown in Samples 28 to 36 in Table 4, and 100 g of solvent was added to the log. The same operations and evaluations as in Example 1 were performed, and the results are shown in Table 4.
（以下余白）
（実施例５）
第５表の試料Ｎ１１３７〜４５に示すとおりに、オクチ
ル酸ルテニウムとオクチル酸コバルト・オクチル酸チタ
ンを配合して１０ｇとし溶剤１００ｇを加えたものをつ
くり、以下実施例１と同様な操作・評価を行い、その結
果は第５表に示すとおりである。(Left below) (Example 5) As shown in Samples N1137 to 45 in Table 5, ruthenium octylate, cobalt octylate and titanium octylate were mixed to make 10 g, and 100 g of solvent was added, and the following experiments were carried out. The same operations and evaluations as in Example 1 were performed, and the results are shown in Table 5.
（以下余白）
（実施例６）
第６表の試料隘４６〜５４に示すとおりに、オクチル酸
ルテニウムとオクチル酸シリカを配合してｌ。(The following is a blank space) (Example 6) Ruthenium octylate and silica octylate were blended as shown in sample boxes 46 to 54 of Table 6.
ｇとし溶剤ｔｏｏ ｇを加えたものをつくり、以下実施
例１と同様な操作・評価を行い、その結果は第６表に示
すとおりである。g and the solvent too g were prepared, and the same operations and evaluations as in Example 1 were carried out, and the results are shown in Table 6.
（以下余白）
（実施例７）
第７表の試料患５５〜６３に示すとおりに、オクチル酸
ルテニウムとオクチル酸シリカ・オクチル酸チタンを配
合して１０ｇとし溶剤１００ｇを加えたものをつくり、
以下実施例１と同様な操作・評価を行い、その結果は第
７表に示すとおりである。(Left below) (Example 7) As shown in samples 55 to 63 in Table 7, ruthenium octylate, silica octylate, and titanium octylate were mixed to make 10 g, and 100 g of solvent was added.
The same operations and evaluations as in Example 1 were carried out below, and the results are shown in Table 7.
（以下余白）
（実施例８）
第８表の試料漱６４〜７２に示すとおりに、オクチル酸
ルテニウムとオクチル酸アルミニウムを配合してＬｏｇ
とし溶剤１００ｇを加えたものをつくり、以下実施例１
と同様な操作・評価を行い、その結果は第８表に示すと
おりである。(Left below) (Example 8) Ruthenium octylate and aluminum octylate were blended as shown in sample residues 64 to 72 in Table 8.
Example 1 was prepared by adding 100g of solvent.
The same operations and evaluations as above were performed, and the results are shown in Table 8.
（以下余白）
（実施例９）
第９表の試料に７３〜８１に示すとおりに、オクチル酸
ルテニウムとオクチル酸シリカ・オクチル酸ホウ素・オ
クチル酸ビスマスを配合して１０ｇとし溶剤１００ｇを
加えたものをつくり、以下実施例１と同様な操作・評価
を行い、その結果は第９表に示すとおりである。(The following is a blank space) (Example 9) Ruthenium octylate, silica octylate, boron octylate, and bismuth octylate were blended to the sample in Table 9 as shown in 73 to 81 to make 10 g, and 100 g of solvent was added. The following operations and evaluations were performed in the same manner as in Example 1, and the results are shown in Table 9.
（以下余白）
（実施例１０）
第１０表の試料階８２〜９０に示すとおりに、オクチル
酸ルテニウムとオクチル酸チタンを配合して１０ｇとし
溶ＦＩ１１００ｇを加えたものをつくり、表中の各増粘
剤を１００ｇ加え、以下実施例１と同様な操作・評価を
行い、その結果は第１０表に示すとおりである。(Left below) (Example 10) As shown in sample levels 82 to 90 in Table 10, ruthenium octylate and titanium octylate were mixed to make 10 g, and 1,100 g of molten FI was added to each of the increases listed in the table. 100 g of sticky agent was added, and the same operations and evaluations as in Example 1 were performed, and the results are shown in Table 10.
（以下余白）
これらから明らかなように、製造時にペースト加熱温度
が８０〜１３０℃のものでは泡立ちがあり抵抗膜が平滑
でなく、抵抗値のバラツキも大きい。(The following is a blank space) As is clear from the above, when the paste is heated at a temperature of 80 to 130° C. during manufacture, there is bubbling, the resistive film is not smooth, and the resistance value varies widely.
１４０’Ｃ以上で加熱することによって初めて泡立ちの
無い、平滑な抵抗体膜の得られるペーストを製造するこ
とができ、抵抗値のバラツキを小さくすることができる
。By heating at 140'C or more, it is possible to produce a paste that produces a smooth resistor film without bubbles, and it is possible to reduce variations in resistance values.
なお、上記の各実施例において加熱時間は３０分間とし
たが、１４０℃で１０分間以上であれば同様の効果が得
られる。また金属化合物についてはオクチル酸塩を用い
るものについてのみ記載したが、溶剤に溶解可能なもの
、例えばナフテン酸塩等のカルボン酸塩、アルコキサイ
ド、クラウンエーテル等の配位子を含む錯体等であれば
本発明の方法は適用することができる。また溶剤につい
ては、天然樹脂に対する溶解能があり沸点が１４０℃以
上のものであれば使用できる。ペースト塗布方法につい
ては、スクリーン印刷についてのみ記載したが、ハケ類
による塗布、スプレー等による塗布等、塗布時に泡立ち
を生ずる方法についても同等の結果が得られる。Although the heating time was 30 minutes in each of the above examples, the same effect can be obtained if the heating time is 10 minutes or more at 140°C. Regarding metal compounds, only those using octylate have been described, but if they are soluble in solvents, such as carboxylates such as naphthenates, alkoxides, complexes containing ligands such as crown ethers, etc. The method of the invention can be applied. As for the solvent, any solvent that has the ability to dissolve the natural resin and has a boiling point of 140° C. or higher can be used. Regarding the paste application method, only screen printing has been described, but similar results can be obtained with methods that produce foaming during application, such as application with a brush or spray.
発明の効果
以上のように本発明の、１４０℃以上に加熱することに
より抵抗体用ペーストを製造する方法では、ムラのない
、平滑な抵抗体膜を得ることができ、それにより抵抗値
のバラツキを小さくすることができるので、産業上の効
果は多大なものである。Effects of the Invention As described above, the method of the present invention for producing a resistor paste by heating to 140°C or higher can obtain a smooth resistor film without unevenness, thereby reducing the variation in resistance value. can be made small, so the industrial effects are significant.
第１図は本発明の一実施例の抵抗体用ペーストの製造方
法による抵抗体膜を形成した抵抗体の断面図、第２図は
従来の技術による抵抗体の断面図である。
５・・・・・・絶縁基板、６・・・・・・アンダーグレ
ーズ、７・・・・・・Ａｇ −Ｐｄ ＠掻、８・・・・
・・抵抗体膜。FIG. 1 is a cross-sectional view of a resistor on which a resistor film is formed using a method for producing a paste for a resistor according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a resistor according to a conventional technique. 5...Insulating substrate, 6...Underglaze, 7...Ag-Pd @scraping, 8...
...Resistor membrane.
Claims (1)
ノイド系カルボン酸の組成物とを含む溶液を、１４０℃
以上で反応させる抵抗体用ペーストの製造方法。A solution containing at least a compound containing ruthenium in its structure and a composition of a terpenoid carboxylic acid is heated at 140°C.
A method for producing a paste for a resistor which is reacted as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2068805A JPH03268403A (en) | 1990-03-19 | 1990-03-19 | Manufacture of resistor paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2068805A JPH03268403A (en) | 1990-03-19 | 1990-03-19 | Manufacture of resistor paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03268403A true JPH03268403A (en) | 1991-11-29 |
Family
ID=13384302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2068805A Pending JPH03268403A (en) | 1990-03-19 | 1990-03-19 | Manufacture of resistor paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03268403A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0743284A1 (en) * | 1995-05-15 | 1996-11-20 | Matsushita Electric Industrial Co., Ltd | Paste for manufacturing ferrite and ferrite |
-
1990
- 1990-03-19 JP JP2068805A patent/JPH03268403A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0743284A1 (en) * | 1995-05-15 | 1996-11-20 | Matsushita Electric Industrial Co., Ltd | Paste for manufacturing ferrite and ferrite |
| US5698131A (en) * | 1995-05-15 | 1997-12-16 | Matsushita Electric Industrial Co., Ltd. | Paste for manufacturing ferrite and ferrite |
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