JPH0325880A - Infrared heater - Google Patents
Infrared heaterInfo
- Publication number
- JPH0325880A JPH0325880A JP16108789A JP16108789A JPH0325880A JP H0325880 A JPH0325880 A JP H0325880A JP 16108789 A JP16108789 A JP 16108789A JP 16108789 A JP16108789 A JP 16108789A JP H0325880 A JPH0325880 A JP H0325880A
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- thin film
- infrared heater
- layer
- resistance heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 239000012212 insulator Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910003460 diamond Inorganic materials 0.000 abstract description 3
- 239000010432 diamond Substances 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 239000010937 tungsten Substances 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 230000007246 mechanism Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- -1 alumina bricks Chemical compound 0.000 description 3
- 239000011449 brick Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910001179 chromel Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は赤外線ヒータに係り、特に薄膜の赤外線ヒータ
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an infrared heater, and particularly to a thin film infrared heater.
［従来の技術及び発明が解決すべき課題］従来から使用
される赤外線ランプは被加熱体のごく表面を加熱したい
場合に赤外線ランプの光を被加熱体に照射し、輻射熱で
加熱を行っている。[Conventional technology and problems to be solved by the invention] Infrared lamps that have been used conventionally irradiate the object with the light of the infrared lamp when it is desired to heat the very surface of the object to be heated, and heat the object using radiant heat. .
しかし，赤外線ランプに使用されるフィラメントとして
はタングステンや炭素等が用いられている。However, tungsten, carbon, etc. are used as filaments for infrared lamps.
このフィラメントのが寿命が短く、１０００時間位で消
耗してしまい、その交換または修理等のためのメンテナ
ンスが必要となる。また、構造が複雑で大型であり、気
密装置内に設置される場合には赤外線ランプの設置容積
分が装置全体にしめる割合が大きく、特に照射面積が小
さい場合にはその傾向が強く、効率も悪く、経済的にも
非常に高額になってしまうという欠点があった．さらに
、現在使用されている赤外線ランプは加熱温度が６００
〜７００℃程度であって、８００〜１０００℃程度の加
熱に適したものは得られなかった。This filament has a short lifespan and wears out after about 1000 hours, requiring maintenance to replace or repair it. In addition, the structure is complex and large, and when installed in an airtight device, the installation volume of the infrared lamp takes up a large proportion of the entire device, and this tendency is particularly strong when the irradiation area is small, resulting in poor efficiency. However, the disadvantage was that it was economically very expensive. Furthermore, the infrared lamps currently in use have a heating temperature of 600°C.
to about 700°C, and no material suitable for heating at about 800 to 1000°C was obtained.
本発明は上記のような欠点を解消し、小型でしかも耐久
年数が長く，高温加熱処理ができる赤外線ヒータを提供
することを目的とする．［課題を解決するための手段］
上記の目的を達成するため、本発明の赤外線ヒータは、
薄膜抵抗発熱体層と、該薄膜抵抗発熱体層の加熱により
赤外線を発生するＭｅ体層とを積層して或る．
［作用コ
本発明の赤外線ヒータは、金属等から或る導電性でしか
も通電により発熱する抵抗発熱体を薄膜に戊形し、さら
に赤外線もしくは遠赤外線を放出するセラミック等の絶
縁体層を積層して得られるものであり、非常に薄い積層
体から或る．そのため、設置に必要な容積もごく小さく
，シかも高温を発することができる。The object of the present invention is to eliminate the above-mentioned drawbacks, and to provide an infrared heater that is small, has a long service life, and is capable of high-temperature heat treatment. [Means for Solving the Problems] In order to achieve the above object, the infrared heater of the present invention has the following features:
A thin film resistance heating element layer and a Me body layer which generates infrared rays by heating the thin film resistance heating element layer are laminated. [Function] The infrared heater of the present invention is made by forming a resistive heating element made of metal or the like into a thin film that is conductive and generates heat when energized, and further laminated with an insulating layer such as ceramic that emits infrared or far infrared rays. It is obtained from a very thin laminate. Therefore, the volume required for installation is extremely small, and it can generate high temperatures.
［実施例］
本発明の赤外線ヒータを半導体製造のＣＶＤ装置に適用
したー実施例を図面を参照して説明する．第１図におい
て、ＣＶＤ装置の処理室１は円筒状で内部を気密に保持
されている．処理室１には半導体ウェハＷを処理面が下
方になるようエアシリンダ等で駆動する昇降機構２に接
続された支持体３と共に半導体ウェハＷの周縁部を係止
して固定する設置台４が設けられる．処理室１の下部に
は酸化系のガスである膜或長用ガス及び還元性のガスで
ある膜成長用ガスを処理室１にそれぞれ供給する導入機
構５及び６が被処理体である半導体ウェハＷに対位する
よう設けられる．さらに反応ガスの導入機構５及び６は
流量制御機構７を介してそれぞれガス供給系に接続され
、導入機構５及び６と被処理体間には円筒状のガスダク
ト８が設けられ、このガスダクト８には垂直邸動機構９
により反応ガスが半導体ウェハＷ上に均一に接するよう
に最適な位置に移動されるガス流制御板１０が備えられ
る．処理室ｌの上方には排気配管１１が複数本設けられ
，真空排気機構ｌ２により処理室１内を減圧にし、さら
に反応ガスの排気を行うようになっている．
ここで、半導体ウェハＷの設置台４の上方には石英ガラ
ス製の窓１３を通して半導体ウェハＷを加熱する赤外線
ヒータ１４が設けられる．赤外線ヒータｌ４は基台ｌ５
に絶縁体１６が被着され、その上に薄膜抵抗発熱体層１
７が積層されている．ここで、赤外線ヒータ１４の各層
について説明する．
基台１５は断熱材であって薄膜抵抗発熱体層１７からの
発熱を被処理体への加熱に利用できるようにしている．
また基台ｌ５の材料としては，断熱材になるものなら何
れも使用可能であるが、アルミナ、石英，ジルコニア、
炭化ケイ素、窒化ケイ素、ダイアモンド等に代表される
セラミックス，アルミナ煉瓦、カーボン煉瓦等の煉瓦等
のほか、これらの断熱材が被着されていればＡＩ２，Ｓ
ＵＳ等の導熱性の材料等も好適に用いられる。[Example] An example in which the infrared heater of the present invention is applied to a CVD apparatus for semiconductor manufacturing will be described with reference to the drawings. In FIG. 1, a processing chamber 1 of the CVD apparatus has a cylindrical shape and is kept airtight inside. The processing chamber 1 includes a support 3 connected to an elevating mechanism 2 driven by an air cylinder or the like so that the processing surface of the semiconductor wafer W faces downward, and an installation table 4 that locks and fixes the peripheral edge of the semiconductor wafer W. It will be established. In the lower part of the processing chamber 1, introduction mechanisms 5 and 6 for supplying a film lengthening gas, which is an oxidizing gas, and a film growth gas, which is a reducing gas, to the processing chamber 1, respectively, are installed to supply a semiconductor wafer, which is an object to be processed, to the processing chamber 1. It is set up opposite the W. Further, the reaction gas introduction mechanisms 5 and 6 are respectively connected to a gas supply system via a flow rate control mechanism 7, and a cylindrical gas duct 8 is provided between the introduction mechanisms 5 and 6 and the object to be treated. is vertical motion mechanism 9
A gas flow control plate 10 is provided which is moved to an optimal position so that the reaction gas comes into uniform contact with the semiconductor wafer W. A plurality of exhaust pipes 11 are provided above the processing chamber 1, and a vacuum exhaust mechanism 12 reduces the pressure inside the processing chamber 1 and further exhausts the reaction gas. Here, an infrared heater 14 is provided above the mounting table 4 for the semiconductor wafer W to heat the semiconductor wafer W through a window 13 made of quartz glass. Infrared heater l4 is attached to base l5
An insulator 16 is deposited on the thin film resistance heating element layer 1.
7 are stacked. Here, each layer of the infrared heater 14 will be explained. The base 15 is made of a heat insulating material so that the heat generated from the thin film resistance heating layer 17 can be used to heat the object to be processed.
Furthermore, as the material for the base l5, any material that can serve as a heat insulator can be used, but alumina, quartz, zirconia,
In addition to ceramics such as silicon carbide, silicon nitride, and diamond, bricks such as alumina bricks, and carbon bricks, if these insulation materials are attached, AI2, S
A heat conductive material such as US may also be suitably used.
基台１５上に被着される絶縁体層１６は電気的絶縁性に
優れ、赤外線もしくは遠赤外線を放射し易い材質であれ
ば何れも使用可能であって，アルミナ、ジルコニア，炭
化ケイ素、ダイヤモンド等のセラミック等が好適に用い
られる．これらの材質を溶射、***等で基台１５上に積
層して形成し、膜厚は使用電力により異なるが、１００
〜２００Ｖの商用電源を使用する場合は１〜１０００μ
ｍのものが最適である。The insulating layer 16 deposited on the base 15 can be made of any material as long as it has excellent electrical insulation and easily emits infrared rays or far infrared rays, such as alumina, zirconia, silicon carbide, diamond, etc. Ceramics and the like are preferably used. These materials are laminated and formed on the base 15 by thermal spraying, explosion spraying, etc., and the film thickness varies depending on the power used, but is approximately 100%
~1~1000μ when using a ~200V commercial power supply
m is optimal.
絶縁体層１６に被着される薄膜抵抗発熱体層１７はクロ
ム、ニッケル，白金、タンタル、タングステン、スズ，
鉄，鉛、アルメル、ベリリウム、アンチモン、インジウ
ム，クロメル、コバルト、ストロンチウム、モリブデン
，リチウム，ルビシウム等金属単体及びカーボンブラッ
ク、グラファイト等の炭素系単体の他，ニクロム、ステ
ンレスＳＵＳ、青銅、黄銅等の合金、ポリマーグラフト
カーボン等のポリマー系複合材料、ケイ化モリブデン等
の複合セラミック材料を含め導電性を有し，通電により
抵抗発熱体となりうるものならば何れも好適に使用でき
る．薄膜抵抗発熱体層１７はこれらの材質のものを蒸着
、溶射，ＣＶＤ．スパッター、イオンプレーティング等
の或膜手段を適宜採用することにより絶縁体層全面に均
一に成膜し，膜厚は０．１−１０００μｍ、好ましくは
１〜１０μｍである。The thin film resistance heating element layer 17 deposited on the insulator layer 16 is made of chromium, nickel, platinum, tantalum, tungsten, tin,
In addition to metals such as iron, lead, alumel, beryllium, antimony, indium, chromel, cobalt, strontium, molybdenum, lithium, and rubicium, and carbon-based substances such as carbon black and graphite, alloys such as nichrome, stainless steel SUS, bronze, and brass. , polymer-based composite materials such as polymer-grafted carbon, and composite ceramic materials such as molybdenum silicide, any material can be suitably used as long as it has conductivity and can become a resistance heating element when energized. The thin film resistance heating element layer 17 is made of these materials by vapor deposition, thermal spraying, CVD. A film is formed uniformly over the entire surface of the insulating layer by appropriately employing a film forming method such as sputtering or ion plating, and the film thickness is 0.1 to 1000 μm, preferably 1 to 10 μm.
以上説明の各層から或る赤外線ヒータは、薄膜抵抗発熱
体層に通電することにより３００〜１０００℃の熱を発
生し、所望の加熱温度になるよう適宜材質及び供給電流
を選択すればよい。An infrared heater made of each of the layers described above generates heat of 300 to 1000° C. by applying electricity to the thin film resistance heating layer, and the material and supply current may be appropriately selected to achieve a desired heating temperature.
そして面積も適宜加熱面積に相当する大きさに形成でき
、しかも第２図，第３図に示すように曲面の基台１５ａ
及び１５ｂ上に絶縁体層１６ａ及び１６ｂさらに薄膜抵
抗発熱体層１７ａ及び１７ｂを被着させ曲面状にも簡単
に形或できる。The area can also be appropriately formed to a size corresponding to the heating area, and as shown in FIGS. 2 and 3, the base 15a has a curved surface.
Insulator layers 16a and 16b and thin film resistance heating element layers 17a and 17b are deposited on 15b and 15b to easily form a curved surface.
ここでは基台１５に絶縁体Ｒ１６を被着させ、薄膜抵抗
発熱体層１７を設ける場合を説明したが，基台１５が電
気的に絶縁体であれば基台に薄膜抵抗発熱体層を介して
絶縁体層を設けてもよい。Here, a case has been described in which the insulator R16 is applied to the base 15 and the thin film resistance heating layer 17 is provided. An insulator layer may also be provided.
以上のような構成のＣＶＤ装置を用いて半導体ウェハＷ
にタングステンシリサイド膜を形成する方法を説明する
．
まず、予め赤外線ヒータ１４に通電し，６００〜７００
℃に加熱し、処理室１の搬入出用開閉機構（図示せず）
を介して半導体ウェハＷを設置台４に配置し，支持体３
で支持する．半導体ウェハＷを上記温度に加熱した状態
で酸化系ガス導入機構５及び還元系ガス導入機構６から
処理室ｌ内にそれぞれＷＦ，及びＳｉＨ，ＣＱ．を導入
するとともに真空排気機構１２により処理室１内が工Ｏ
ＯミリＴ ｏｒｒ以下になるよう真空排気を行う．する
と半導体ウェハＷ表面にＷＳｉｘが均一に積層される．
以上説明は赤外線ヒータをＣＶＤ装霞に適用した一実施
例を示したもので、本発明の赤外線ヒータはこれに限定
されるものではなく、スパッタリング装置、アニール装
置、アッシング装置等にも好適に用いることができ、半
導体装置に限定されず赤外線ランプが使用されている装
置ならば何れも使用することができる。Semiconductor wafer W is manufactured using the CVD apparatus configured as described above.
We will explain how to form a tungsten silicide film. First, the infrared heater 14 is energized in advance, and 600 to 700
℃, and an opening/closing mechanism for loading and unloading the processing chamber 1 (not shown)
Place the semiconductor wafer W on the installation stand 4 via the support body 3.
I support it. With the semiconductor wafer W heated to the above temperature, WF, SiH, CQ. At the same time, the inside of the processing chamber 1 is evacuated by the vacuum exhaust mechanism 12.
Evacuate to below 0 mm Torr. Then, WSix is uniformly stacked on the surface of the semiconductor wafer W.
The above description shows one embodiment in which an infrared heater is applied to CVD equipment, and the infrared heater of the present invention is not limited to this, but can also be suitably used in sputtering equipment, annealing equipment, ashing equipment, etc. It is not limited to semiconductor devices, and any device that uses an infrared lamp can be used.
［発明の効果］
以上の説明からも明らかなように、本発明の赤外線ヒー
タによれば、小型でコンパクトであるため、種々の装置
に設置可能であって、しかも曲面形成も簡単に行うこと
ができる。さらに、ＯＮ、ＯＦＦ特性のよい赤外線ヒー
タが得られる．[Effects of the Invention] As is clear from the above description, the infrared heater of the present invention is small and compact, so it can be installed in various devices, and curved surfaces can be easily formed. can. Furthermore, an infrared heater with good ON/OFF characteristics can be obtained.
Claims (1)
赤外線を発生する絶縁体層とを積層して成ることを特徴
とする赤外線ヒータ。An infrared heater comprising a laminated layer of a thin film resistance heating element layer and an insulating layer that generates infrared rays by heating the thin film resistance heating element layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1161087A JP2778598B2 (en) | 1989-06-23 | 1989-06-23 | Heating method and heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1161087A JP2778598B2 (en) | 1989-06-23 | 1989-06-23 | Heating method and heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0325880A true JPH0325880A (en) | 1991-02-04 |
| JP2778598B2 JP2778598B2 (en) | 1998-07-23 |
Family
ID=15728367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1161087A Expired - Lifetime JP2778598B2 (en) | 1989-06-23 | 1989-06-23 | Heating method and heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2778598B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658066A2 (en) * | 1993-12-09 | 1995-06-14 | Sumitomo Electric Industries, Limited | Diamond heater |
| WO1996009738A1 (en) * | 1994-09-20 | 1996-03-28 | Negawatt Gmbh | Electric heating element |
| EP0862352A2 (en) * | 1997-02-28 | 1998-09-02 | Applied Komatsu Technology, Inc. | A heating element with a diamond sealing material |
| WO2005076666A1 (en) * | 2004-02-04 | 2005-08-18 | The Doshisha | Heat porducing material in thin film form and method for manufacture thereof |
| JP2005339908A (en) * | 2004-05-25 | 2005-12-08 | Matsushita Electric Works Ltd | Infrared radiation element |
| WO2006095709A1 (en) * | 2005-03-08 | 2006-09-14 | The Doshisha | Thin-film heating element, and process for producing thin-film heating element |
| EP2562519A2 (en) | 2011-08-25 | 2013-02-27 | Innovative Sensor Technology IST AG | Radiation source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62185329A (en) * | 1986-02-10 | 1987-08-13 | Toshiba Corp | Oxidizing device for silicon |
| JPS63105486A (en) * | 1986-10-20 | 1988-05-10 | システム工業株式会社 | Ceramic composite system far-infrared radiation unit and manufacture of the same |
-
1989
- 1989-06-23 JP JP1161087A patent/JP2778598B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62185329A (en) * | 1986-02-10 | 1987-08-13 | Toshiba Corp | Oxidizing device for silicon |
| JPS63105486A (en) * | 1986-10-20 | 1988-05-10 | システム工業株式会社 | Ceramic composite system far-infrared radiation unit and manufacture of the same |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658066A2 (en) * | 1993-12-09 | 1995-06-14 | Sumitomo Electric Industries, Limited | Diamond heater |
| EP0658066A3 (en) * | 1993-12-09 | 1996-02-07 | Sumitomo Electric Industries | Diamond heater. |
| US5695670A (en) * | 1993-12-09 | 1997-12-09 | Sumitomo Electric Industries, Ltd. | Diamond heater |
| WO1996009738A1 (en) * | 1994-09-20 | 1996-03-28 | Negawatt Gmbh | Electric heating element |
| US5977519A (en) * | 1997-02-28 | 1999-11-02 | Applied Komatsu Technology, Inc. | Heating element with a diamond sealing material |
| EP0862352A3 (en) * | 1997-02-28 | 1998-10-21 | Applied Komatsu Technology, Inc. | A heating element with a diamond sealing material |
| EP0862352A2 (en) * | 1997-02-28 | 1998-09-02 | Applied Komatsu Technology, Inc. | A heating element with a diamond sealing material |
| US6191390B1 (en) | 1997-02-28 | 2001-02-20 | Applied Komatsu Technology, Inc. | Heating element with a diamond sealing material |
| WO2005076666A1 (en) * | 2004-02-04 | 2005-08-18 | The Doshisha | Heat porducing material in thin film form and method for manufacture thereof |
| JP2005339908A (en) * | 2004-05-25 | 2005-12-08 | Matsushita Electric Works Ltd | Infrared radiation element |
| JP4534597B2 (en) * | 2004-05-25 | 2010-09-01 | パナソニック電工株式会社 | Infrared radiation element |
| WO2006095709A1 (en) * | 2005-03-08 | 2006-09-14 | The Doshisha | Thin-film heating element, and process for producing thin-film heating element |
| EP2562519A2 (en) | 2011-08-25 | 2013-02-27 | Innovative Sensor Technology IST AG | Radiation source |
| DE102011081570A1 (en) | 2011-08-25 | 2013-02-28 | Innovative Sensor Technology Ist Ag | radiation source |
| DE102011081570B4 (en) | 2011-08-25 | 2023-08-17 | Innovative Sensor Technology Ist Ag | radiation source |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2778598B2 (en) | 1998-07-23 |
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