JPH03241823A - Vapor phase reaction device - Google Patents
Vapor phase reaction deviceInfo
- Publication number
- JPH03241823A JPH03241823A JP3882890A JP3882890A JPH03241823A JP H03241823 A JPH03241823 A JP H03241823A JP 3882890 A JP3882890 A JP 3882890A JP 3882890 A JP3882890 A JP 3882890A JP H03241823 A JPH03241823 A JP H03241823A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reactive gas
- reaction
- leading
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 33
- 239000012808 vapor phase Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 claims abstract description 35
- 239000012495 reaction gas Substances 0.000 claims abstract description 30
- 238000012544 monitoring process Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010419 fine particle Substances 0.000 claims abstract description 11
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
基板上に各種の膜を成長又は基板をエツチングする気相
反応装置に関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] This invention relates to a gas phase reaction apparatus for growing various films on a substrate or etching a substrate.
成長膜に白濁を生ずる原因の肉供給する反応ガスに起因
するもの、即ち反応ガス導入口への配管にリークやガス
の滞留がある場合の異常反応の防止を目的とし。The purpose is to prevent abnormal reactions caused by the reaction gas supplied to the meat, which causes cloudiness in the grown film, i.e., when there is a leak or gas stagnation in the piping to the reaction gas inlet.
基板を収容し９反応ガスを導入して該基板上に成膜又は
該基板をエツチングするする反応室（１）と。a reaction chamber (1) that accommodates a substrate and introduces a reaction gas to form a film on the substrate or etch the substrate;
該反応室（１）内に反応ガスを導入する反応ガス導入口
（２）と、該反応室（１）内を排気する排気口（３）と
、該反応ガス導入口（２）と反応ガス源との間に設けら
れたモニタ用窓付容器（４）とからなり、該モニタ用窓
付容器（４）は透明なモニタ用窓を有し、該窓を通して
内部を通過するガス中に含まれる微粒子を観測できるよ
うに構成する。A reaction gas inlet (2) for introducing a reaction gas into the reaction chamber (1), an exhaust port (3) for exhausting the inside of the reaction chamber (1), and a connection between the reaction gas inlet (2) and the reaction gas. a container with a monitoring window (4) provided between the source and the container with a monitoring window (4), the container with a monitoring window (4) has a transparent monitoring window, and the gas contained in the gas passing through the window through the window; The system is configured so that it is possible to observe the fine particles that are generated.
本発明は基板上に各種の膜を成長又は基板をエツチング
する気相反応装置に関する。The present invention relates to a gas phase reaction apparatus for growing various films on a substrate or etching a substrate.
近年、半導体装置の高機能化に伴い、気相成長装置、特
に珪素（Ｓｔ）のエピタキシャル成長は成長雰囲気の徹
底した微粒子除去対策が要求されている。In recent years, as semiconductor devices have become more sophisticated, it has become necessary to thoroughly remove particulates from the growth atmosphere in vapor phase growth apparatuses, particularly in epitaxial growth of silicon (St).
この要求に対応して９本発明は高密度、高集積度デバイ
スの製造に利用できる。In response to this demand, the present invention can be used to manufacture high-density, highly integrated devices.
気相成長装置（特に減圧エピタキシャル成長装置）にお
いては、ガス配管にリークやガスの滞留があると気相反
応を起こして成長膜に白濁を生じていた。従来は成長膜
をモニタすることにより。In a vapor phase growth apparatus (particularly a reduced pressure epitaxial growth apparatus), if there is a leak or gas stagnation in a gas pipe, a gas phase reaction occurs, causing cloudiness in the grown film. Traditionally, by monitoring the growing film.
白濁の状態を調べていた。I was investigating the cloudy condition.
ところが、ｔｃ長膜に白濁が生ずると、その原因究明に
時間がかかり、或いは原因を把握することが困難な状況
であった。However, when cloudiness occurs in the TC long membrane, it takes time to investigate the cause, or it is difficult to understand the cause.
第３図は従来例による反応系を説明する模式図である。FIG. 3 is a schematic diagram illustrating a reaction system according to a conventional example.
図において、１は反応室、２は反応ガス導入口。In the figure, 1 is a reaction chamber, and 2 is a reaction gas inlet.
３は排気口である。3 is an exhaust port.
ウェハ上に気相成長等を行う際に９反応室１内にウェハ
を入れ９反応ガス導入口２より反応室内に反応ガスを導
入し、排気口３より反応室内を排気してガス圧を一定に
保つようにして成膜を行っている。When performing vapor phase growth on a wafer, the wafer is placed in the reaction chamber 1, and a reaction gas is introduced into the reaction chamber through the reaction gas inlet 2, and the gas pressure is kept constant by exhausting the inside of the reaction chamber through the exhaust port 3. The film is formed while keeping the temperature constant.
従来例の装置では、ｒｆｃ長膜の白濁防止の対策が即時
にとれず、従って、ｔｃ長終了後に異常を追求していた
。In the conventional apparatus, it is not possible to immediately take measures to prevent clouding of the RFC long film, and therefore, abnormalities are sought after the TC long film ends.
本発明は成長膜に白濁を生ずる原因の肉供給する反応ガ
スに起因するもの、即ち反応ガス導入口への配管にリー
クやガスの滞留がある場合の異常反応を予めモニタでき
る装置を提供することを目的とする。An object of the present invention is to provide an apparatus that can monitor in advance abnormal reactions caused by the reaction gas supplied to the growth film, that is, when there is leakage or gas retention in the piping to the reaction gas inlet. With the goal.
（課題を解決するための手段）
上記課題の解決は、基板を収容し２反応ガスを導入して
該基板上に成膜又は該基板をエツチングする反応室（１
）と、該反応室（１）内に反応ガスを導入する反応ガス
導入口（２）と、該反応室（１）内を排気する排気口（
３）と、該反応ガス導入口（２）と反応ガス源との間に
設けられたモニタ用窓付容器（４）とからなり、＃ｆモ
ニタ用意付容器（４）は透明なモニタ用窓を有し、該窓
を通して内部を通過するガス中に含まれる微粒子を観測
できるように構成されている気相反応装置により達成さ
れる。(Means for Solving the Problems) The above problems can be solved by forming a reaction chamber (1
), a reaction gas inlet (2) for introducing a reaction gas into the reaction chamber (1), and an exhaust port (2) for exhausting the inside of the reaction chamber (1).
3), and a container (4) with a monitoring window provided between the reaction gas inlet (2) and the reaction gas source, and the #f monitor preparation container (4) has a transparent monitoring window. This is achieved by a gas phase reactor having a structure that allows observation of fine particles contained in the gas passing through the interior through the window.
第１図は本発明の詳細な説明する模式図である。FIG. 1 is a schematic diagram illustrating the present invention in detail.
図において、１は反応室、２は反応ガス導入口。In the figure, 1 is a reaction chamber, and 2 is a reaction gas inlet.
３は排気口、４はモニタ用窓付容器、５は光源。3 is an exhaust port, 4 is a container with a monitoring window, and 5 is a light source.
６は微粒子カウンタである。6 is a particle counter.
ウェハ上に気相成長等を行う際に１反応室ｌ内にウェハ
を入れ９反応ガス導入口２よりモニタ用窓付容器４を経
由して反応室内に反応ガスを導入し、排気口３より反応
室内を排気してガス圧を一定に保つようにしている。When performing vapor phase growth on a wafer, a wafer is placed in a reaction chamber 1, and a reaction gas is introduced into the reaction chamber from a reaction gas inlet 2 through a container 4 with a monitoring window, and then from an exhaust port 3. The reaction chamber is evacuated to maintain a constant gas pressure.
モニタ用窓付容器４は対向面が透明な平行平板で形成さ
れ、必要に応じて、光源５からの光を平行平板内のガス
を透過させて微粒子カウンタ６に受けて、供給する反応
ガスの微粒子をカウントする。The container 4 with a monitoring window is formed of a parallel flat plate with a transparent opposing surface, and if necessary, the light from the light source 5 is transmitted through the gas in the parallel flat plate and received by the particle counter 6 to control the reaction gas to be supplied. Count particulates.
本発明者は、成長ガスの白濁の原因が１反応ガスを供給
する配管のリークにより反応ガス内に含まれる微細粒子
と密接な関係を有することを確かめ、供給する反応ガス
の微粒子を観測して成長膜の白濁の原因が反応ガスの配
管系にあるのか１反応室内にあるのか明白となることを
利用して、対処を速やかに行えるようにしたものである
。The inventor of the present invention confirmed that the cause of the cloudiness of the growth gas is closely related to the fine particles contained in the reaction gas due to a leak in the piping supplying the reaction gas, and observed the fine particles of the reaction gas supplied. Taking advantage of the fact that it becomes clear whether the cause of the cloudiness of the grown film is in the reactant gas piping system or in one reaction chamber, countermeasures can be taken quickly.
第２図は本発明の一実施例による反応系を説明する模式
図である。FIG. 2 is a schematic diagram illustrating a reaction system according to one embodiment of the present invention.
図において、１は反応室、２は反応ガス導入口。In the figure, 1 is a reaction chamber, and 2 is a reaction gas inlet.
３は排気口、４はモニタ用窓付容器である。3 is an exhaust port, and 4 is a container with a monitoring window.
ここで、モニタ窓付容器４及びカウンタは以下に示すも
のを使用した。Here, the container 4 with a monitor window and the counter shown below were used.
容器の材質の例： ５ＵＳ（ステンレス鋼）容易の大き
さの例： １００ｍｍ Ｘ ２００ｍ５ Ｘ ５０ｍ
■窓の材質：石英
光源の例： Ｈｅ−Ｍｅレーザ
微粒子カウンタの例：ダン化学製。Example of container material: 5US (stainless steel) Example of size: 100mm x 200m5 x 50m
■Window material: Quartz Example of light source: Example of He-Me laser particle counter: Manufactured by Dan Chemical.
ＭＯＤＥＬ ８２−６７００５ ダストカウンタ 反応ガス導入口２には。MODEL 82-67005 dust counter In the reaction gas inlet 2.
モノシラン（ＳｉＨ４）を最大Ｉ ＳＬＭ。Monosilane (SiH4) up to I SLM.
酸素（０２）を最大Ｉ ＳＣＣＭ。Oxygen (02) up to I SCCM.
窒素Ｌ）を最大Ｉ ＳＬＭ 流すことができる配管が接続されている。Nitrogen L) to maximum I SLM Connected to pipes that allow water to flow.
ここで、酸素は配管系がリークした場合を想定した実験
を行うために接続した。Here, oxygen was connected in order to conduct an experiment assuming a case where the piping system leaked.
実験した酸素のリーク量は０．５５ＣＣＭである。The amount of oxygen leaked in the experiment was 0.55 CCM.
酸素は半導体グレードの高純度のものを使用し。We use high purity semiconductor grade oxygen.
わずかのリークでも次式のように気相中で反応し。Even a small leak causes a reaction in the gas phase as shown in the following equation.
微粒子（ＳｉＯｚ）をまき起こす。Generates fine particles (SiOz).
ＳｉＨ４＋０２→ＳｉＯ□。SiH4+02→SiO□.
次に、実施例の効果を示す０．３μｍ以上の微粒子数数
（ｆｔ−３）の数値例を比較例と対比して例示する。Next, a numerical example of the number of fine particles (ft-3) of 0.3 μm or more showing the effects of the example will be illustrated in comparison with a comparative example.
（比較例） （実施例）
０！リーク有 Ｏｔリーク無
微粒子数 ２００００ ０
Ｓｉ基板上に０２リークの有無に対して、下記の同一条
件で厚さ１．０ μｍのＳｔエピ膜を成長し、成長膜の
白濁を観察した。(Comparative example) (Example) 0! With leak Ot Without leak Number of fine particles 20000 0 On a Si substrate with or without 02 leak, a St epitaxial film with a thickness of 1.0 μm was grown under the same conditions as described below, and cloudiness of the grown film was observed.
原料ガス： ５ｉＪｉ １５０ ＳＣＣＭ。Raw material gas: 5iJi 150 SCCM.
希釈ガス： Ｈｚ １００ ＳＬＭ。Dilution gas: Hz 100 SLM.
成長温度：９００°Ｃ。Growth temperature: 900°C.
ガス圧カニ ５ Ｔｏｒｒ。Gas pressure crab 5 Torr.
成長膜の白濁は、ｏｚ’Ｊ−りの有無により次のような
結果が得られた。Regarding the cloudiness of the grown film, the following results were obtained depending on the presence or absence of oz'J-ri.
０２リーク無二全然認められず ａｔリーク有：所々に認められる 実施例ではＳｔエビ膜の成長について説明したが。02 No leaks, no recognition at all AT leak present: found in some places In the example, the growth of the St shrimp membrane was explained.
その他の底膜１例えば二酸化珪素膜、窒化珪素膜等の成
長に本発明を適用しても発明の効果は変わらない。Even if the present invention is applied to the growth of other bottom films 1, such as silicon dioxide films, silicon nitride films, etc., the effects of the invention do not change.
又、気相反応装置としてドライエツチング装置にも本発
明は適用できる。即ち、エツチングガス供給用配管に本
発明のモニタ窓付容器を挿入すれば、配管のリークの有
無がわかりエツチングの異常を防止することができる。The present invention can also be applied to a dry etching device as a gas phase reaction device. That is, by inserting the container with a monitor window of the present invention into the etching gas supply piping, it is possible to detect the presence or absence of leaks in the piping and prevent etching abnormalities.
以上説明したように本発明によれば、成長膜に白濁を生
ずる原因の内、供給する反応ガスに起因するもの、即ち
反応ガス導入口への配管にリークやガスの滞留がある場
合の異常反応を予めモニタできる装置を提供することが
できた。As explained above, according to the present invention, among the causes of white turbidity in a grown film, those caused by the supplied reactive gas, that is, abnormal reactions when there is a leak or gas retention in the piping to the reactive gas inlet. We were able to provide a device that can monitor in advance.
は反応ガス導入口。is the reaction gas inlet.
は排気口。is an exhaust port.
はモニタ用窓付容器。is a container with a window for monitoring.
は光源。is a light source.
は微粒子カウンタis a particulate counter
第１図は本発明の詳細な説明する模式図。
第２図は本発明の一実施例による反応系を説明する模式
図。
第３図は従来例による反応系を説明する模式図である。
図において。
１は反応室。
木４各日月 の言か方図
り６ １ 図
笑方巴イ列のき克日方図
男
圓
従来例の説明図
躬
図FIG. 1 is a schematic diagram illustrating the present invention in detail. FIG. 2 is a schematic diagram illustrating a reaction system according to an embodiment of the present invention. FIG. 3 is a schematic diagram illustrating a reaction system according to a conventional example. In fig. 1 is a reaction chamber. Thursday 4 How to say each day and month 6 1 Diagram Laughing and tomoe rows of Japanese characters explanatory diagram of conventional examples
Claims (1)
は該基板をエッチングする反応室（１）と、該反応室（
１）内に反応ガスを導入する反応ガス導入口（２）と、
該反応室（１）内を排気する排気口（３）と、該反応ガ
ス導入口（２）と反応ガス源との間に設けられたモニタ
用窓付容器（４）とからなり、 該モニタ用窓付容器（４）は透明なモニタ用窓を有し、
該窓を通して内部を通過するガス中に含まれる微粒子を
観測できるように構成されていることを特徴とする気相
反応装置。[Claims] A reaction chamber (1) that houses a substrate and introduces a reaction gas to form a film on the substrate or etch the substrate;
1) a reactive gas inlet (2) for introducing a reactive gas into the interior;
It consists of an exhaust port (3) for exhausting the inside of the reaction chamber (1), and a container with a monitoring window (4) provided between the reaction gas inlet (2) and the reaction gas source, and the monitor The window-equipped container (4) has a transparent monitoring window,
A gas phase reactor characterized in that it is configured to allow observation of fine particles contained in gas passing through the window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3882890A JPH03241823A (en) | 1990-02-20 | 1990-02-20 | Vapor phase reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3882890A JPH03241823A (en) | 1990-02-20 | 1990-02-20 | Vapor phase reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03241823A true JPH03241823A (en) | 1991-10-29 |
Family
ID=12536096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3882890A Pending JPH03241823A (en) | 1990-02-20 | 1990-02-20 | Vapor phase reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03241823A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007318122A (en) * | 2006-05-09 | 2007-12-06 | Air Products & Chemicals Inc | Manufacturing method including supply of impurity-contained gas and device for executing it |
-
1990
- 1990-02-20 JP JP3882890A patent/JPH03241823A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007318122A (en) * | 2006-05-09 | 2007-12-06 | Air Products & Chemicals Inc | Manufacturing method including supply of impurity-contained gas and device for executing it |
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