JPH0320029A - Monitoring method for semiconductor wafer polishing amount - Google Patents
Monitoring method for semiconductor wafer polishing amountInfo
- Publication number
- JPH0320029A JPH0320029A JP1155376A JP15537689A JPH0320029A JP H0320029 A JPH0320029 A JP H0320029A JP 1155376 A JP1155376 A JP 1155376A JP 15537689 A JP15537689 A JP 15537689A JP H0320029 A JPH0320029 A JP H0320029A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- amount
- waste water
- semiconductor wafer
- finish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 12
- 238000012544 monitoring process Methods 0.000 title claims description 10
- 238000005498 polishing Methods 0.000 title 1
- 239000002351 wastewater Substances 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
Landscapes
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体ウェハーの裏面研削工程における研削量
のモニター方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for monitoring the amount of grinding in a backside grinding process of a semiconductor wafer.
従来の技術
第２図に示すようにいわゆる拡散工程で表面への素子形
成，配線を終えた半導体ウェハーｌ（以後ウェハーと略
す）はパッケージング工程にそなえてその厚みが適当な
値になるまで裏面を研削する。このウェハー１の裏面研
削工程は通常、粗研削，中研削，仕上げ研削の３段階の
研削工程をへる。実際には第２図に示すように、３つの
回転砥石の下を基準面に真空吸着したウェハーを通過さ
せて研削する。同図では粗砥石２で粗研削，中砥石３で
中研削，仕上げ砥石４で仕上げ研削を行なっている。各
段階での研削量（研削によって取りさられるウェハーの
厚み）は粗研削では１００〜２００μｍ，中研削では５
０ 〜１００μｒｎ，仕上げ研削では５〜１０μｍとな
る。この中で仕上げ研削における研削量は仕上げ研削後
の仕上り面の良否や仕上げ砥石の寿命に大きな影響を与
えるので、研削量の変動を２〜３μｍの範囲内でコント
ロールしなければならない。従来の研削量モニター方法
としてはまず仕上げ砥石４を十分な高さに上げて中研削
後のウェハーに触れない状態にして中研削後のウェハー
の厚みをマイクロメータ等で測定する。Conventional technology As shown in Fig. 2, a semiconductor wafer (hereinafter referred to as wafer), on which elements have been formed and wired on the front surface through a so-called diffusion process, is prepared for the packaging process by heating the back side until the thickness reaches an appropriate value. to grind. The process of grinding the back surface of the wafer 1 normally involves three stages of grinding: rough grinding, medium grinding, and finish grinding. In practice, as shown in FIG. 2, a wafer vacuum-adsorbed to a reference surface is passed under three rotating grindstones for grinding. In the figure, coarse grinding wheel 2 is used for rough grinding, medium grinding wheel 3 is used for medium grinding, and finishing grindstone 4 is used for finishing grinding. The amount of grinding at each stage (thickness of the wafer removed by grinding) is 100 to 200 μm in rough grinding and 5 μm in medium grinding.
0 to 100 μrn, and 5 to 10 μm in final grinding. Among these, the amount of grinding in finish grinding has a great influence on the quality of the finished surface after finish grinding and the life of the finishing grindstone, so the variation in the amount of grinding must be controlled within a range of 2 to 3 μm. A conventional method for monitoring the amount of grinding is to first raise the finishing grindstone 4 to a sufficient height so that it does not touch the wafer after medium grinding, and then measure the thickness of the wafer after medium grinding using a micrometer or the like.
次に仕上げ砥石４を徐々に下げていって中研削後のウェ
ハーに触れるようになってから、仕上げ研削後のウェハ
ーの厚みをマイクロメータ等で測定し、中研削後のウェ
ハーすなわち仕上げ研削前のウェハーの厚みと比較して
仕上げ研削での研削量を算出し、その研削量が所定の値
になるように仕上げ砥石４の高さをコントロールしてい
た。すなわち中研削後のウェハーの厚さをｔＭ ｒ仕上
げ研削後のウェハーの厚さをｔＦとしたとき、仕上げ研
削における研削量Δｔは
Δｔ＝ｔｍ−ｔｐ ・・・・・・（
１）で算出される。この場合、一度、仕上げ研削が始ま
るとｔＭを測定することはできないので、１．は、仕上
げ研削を始める前に測定した値のまま一定であると仮定
して、所望のΔｔ〈たとえば５〜７μｍ〉を得るための
ｔｐが得られるように、仕上げ砥石４の高さを調節する
ことになる。Next, the finish grinding wheel 4 is gradually lowered until it touches the wafer after the intermediate grinding, and then the thickness of the wafer after the finish grinding is measured with a micrometer, etc. The amount of grinding in finish grinding is calculated by comparing it with the thickness of the wafer, and the height of the finishing grindstone 4 is controlled so that the amount of grinding becomes a predetermined value. That is, when the thickness of the wafer after medium grinding is tM r and the thickness of the wafer after finish grinding is tF, the amount of grinding Δt in finish grinding is Δt = tm - tp ...... (
Calculated by 1). In this case, once finish grinding begins, tM cannot be measured, so 1. Assuming that Δt remains constant at the value measured before starting finish grinding, adjust the height of the finishing whetstone 4 so that tp to obtain the desired Δt (for example, 5 to 7 μm) is obtained. It turns out.
発明が解決しようとする課題
ところが実際には、中仕上げ砥石４の高さは、装置を設
置した部屋の温度や、砥石の回転機構部分の冷却水の温
度の影響で変化する。またその高さの変化の度合いは各
砥石によって微妙に異なる。この砥石の高さの変化を考
慮に入れると仕上げ砥石での実際の研削量は次式で表わ
される。Problems to be Solved by the Invention However, in reality, the height of the semi-finishing grindstone 4 changes depending on the temperature of the room in which the device is installed and the temperature of the cooling water in the rotation mechanism of the grindstone. Also, the degree of change in height differs slightly depending on each whetstone. Taking into account this change in the height of the grindstone, the actual amount of grinding with the finishing grindstone is expressed by the following equation.
Δｔ＝（ｔｍ＋Δｔｍ） ｔｐ ・・・・・・
Ｑ）ここでΔｔＭは仕上げ砥石で研削を開始してから後
の、中砥石の高さの変化量である。従来のモニター方法
では一度仕上げ砥石で研削を開始するとＣ）式において
ｔｍ＋Δｔｍをもはや知り得ない。Δt=(tm+Δtm) tp ・・・・・・
Q) Here, ΔtM is the amount of change in the height of the medium grindstone after starting grinding with the finishing grindstone. In the conventional monitoring method, once grinding is started with the finishing whetstone, it is no longer possible to know tm+Δtm in equation C).
そのため仕上げ研削後、ウェハーの厚みを測定して得た
ｔＦが正確であってもΔｔを正確に知り得す、最良の仕
上げ研削が行なえないという問題だけでなく、仕上げ砥
石の寿命をちぢめるという問題も発生していた。また再
度、研削量を測定し直そうとすれば、仕上げ砥石による
研削を一度中断して、中砥石研削後のウェハー厚みを測
定をしなければならず、研削作業が中断されるという問
題もあった。Therefore, even if tF obtained by measuring the thickness of the wafer after finish grinding is accurate, ∆t cannot be accurately known, which not only causes the problem of not being able to perform the best finish grinding, but also shortens the life of the finish grinding wheel. There were also problems. In addition, if you try to measure the amount of grinding again, you have to stop grinding with the finishing wheel and measure the wafer thickness after grinding with the medium wheel, which causes the problem that the grinding work is interrupted. Ta.
課題を解決するための手段
以上述べた課題を解決するために、本発明によるウェハ
ー研削量のモニター方法では、一定量の研削水を与えな
がら研削を行ない、切粉を含んだ研削廃水の物理量を測
定することによって研削量をモニターすることを特徴と
している。Means for Solving the Problems In order to solve the problems described above, in the method for monitoring the amount of wafer grinding according to the present invention, grinding is performed while giving a certain amount of grinding water, and the physical amount of grinding waste water containing chips is measured. The feature is that the amount of grinding is monitored by measurement.
作用
研削廃水の濁度のような物理量は研削水に含まれる切粉
〈研削によって生じた被研削物の微粒子〉の濃度に依存
する。研削時に与える研削水量を一定にすれば、研削廃
水の切粉の濃度は研削量に比例する。したがって一定量
の研削水を与えながら研削を行ない、研削廃水の物理量
を測定することによって研削量をモニターすることが可
能である。Physical quantities such as the turbidity of action-grinding wastewater depend on the concentration of chips (fine particles of the workpiece produced by grinding) contained in the grinding water. If the amount of grinding water applied during grinding is constant, the concentration of chips in the grinding wastewater is proportional to the amount of grinding. Therefore, it is possible to monitor the amount of grinding by performing grinding while applying a constant amount of grinding water and measuring the physical quantity of the grinding waste water.
実施例
本発明の実施例を第１図を参照しながら説明する。本実
施例は仕上げ砥石４での研削量のモニターを行なった例
である。仕上げ砥石４に一定量の研削水５〈たとえば５
ｅ／ｓｉｎ）を供給しながら半導体ウェハー〈図示せず
〉の仕上げ研削を行なう。このとき発生する研削廃水６
を回収して流す配管７の途中に研削廃水の物理量を測定
する部分８を設ける。物理量として研削廃水の濁度を測
定する場合には配管の一部に透明な部分を設け、同部分
をはさんで発光素子と受光素子を配置する。周囲は遮光
ケースで覆う。受光素子の受光量の信号は、中砥石高さ
制御系９に伝えられる。最良の仕上げ研削が得られたと
きの研削廃水の濁度すなわち受光素子の受光量を記憶さ
せておき、その値と、実際に研削中の受光量を比較して
、研削量が目標値より多いか少ないかを知り得る。たと
えば、受光量が最良研削時の受光量より多い場合には研
削廃水の濁度が低く、仕上げ砥石での研削量が少ないわ
けであるから、中砥石の高さを上げる。すなわち■式に
おいて、１，を一定にしたままｔｗ＋Δｔｍを大きくし
、仕上げ砥石での研削量Δｔを増やすように補正する。Embodiment An embodiment of the present invention will be described with reference to FIG. This embodiment is an example in which the amount of grinding by the finishing grindstone 4 was monitored. A certain amount of grinding water 5 (for example, 5
Finish grinding of the semiconductor wafer (not shown) is performed while supplying the grinding material (e/sin). Grinding waste water generated at this time 6
A part 8 for measuring the physical quantity of grinding wastewater is provided in the middle of a pipe 7 that collects and flows the grinding wastewater. When measuring the turbidity of grinding wastewater as a physical quantity, a transparent part is provided in a part of the piping, and a light emitting element and a light receiving element are arranged across the transparent part. Cover the surrounding area with a light-blocking case. A signal indicating the amount of light received by the light receiving element is transmitted to the medium grindstone height control system 9. Store the turbidity of the grinding wastewater when the best finish grinding is obtained, that is, the amount of light received by the light receiving element, and compare that value with the amount of light actually received during grinding to determine that the amount of grinding is greater than the target value. or less. For example, if the amount of light received is greater than the amount of light received during the best grinding, the turbidity of the grinding wastewater is low and the amount of grinding with the finishing wheel is small, so the height of the medium grinding wheel is increased. That is, in equation (2), tw+Δtm is increased while 1 is kept constant, and correction is made to increase the amount of grinding Δt by the finishing grindstone.
受光量が最良研削時の受光量より少ない場合にはこれと
逆の補正を行なえばよい。このようなモニター方法によ
れば、実際にウェハーの研削作業を行ないながらウェハ
ー研削量をモニターすることができる。またその結果（
信号〉に応じて砥石の高さをコントロールすることによ
って常に最適な研削量を維持できる。また本実施例は研
削廃水の物理量として濁度を測定したが、他の物理量、
たとえば、電気抵抗，熱容量，比誘電率等の測定によっ
ても同様にウェハー研削量のモニターが可能である。If the amount of light received is less than the amount of light received during the best grinding, the opposite correction may be made. According to such a monitoring method, the amount of wafer grinding can be monitored while actually grinding the wafer. Also, the result (
By controlling the height of the grinding wheel according to the signal, the optimum amount of grinding can be maintained at all times. In addition, in this example, turbidity was measured as a physical quantity of grinding wastewater, but other physical quantities,
For example, the amount of wafer grinding can be similarly monitored by measuring electrical resistance, heat capacity, dielectric constant, etc.
発明の効果
以上述べたように本発明によれば、半導体ウエハーの研
削にあたり、研削水量を一定にして、研削廃水の物理量
を測定することによって研削量をモニターしており
（１） 実際に研削作業を行ないながら、研削量を知
り得る、
（２）モニター結果に応じて砥石の高さをコントロール
することにより、常に最適の研削量が得られる、
（３）過剰な研削を防止できるので、仕上げ砥石等の寿
命が延びる、
等の効果が得られ、研削作業の能率向上，半導体製品の
品質安定，研削装置のランニングコストの低減が達戒さ
れる。Effects of the Invention As described above, according to the present invention, when grinding a semiconductor wafer, the amount of grinding water is kept constant and the amount of grinding is monitored by measuring the physical amount of grinding waste water. (2) By controlling the height of the grinding wheel according to the monitoring results, the optimum amount of grinding can be obtained at all times. (3) Since excessive grinding can be prevented, the finish grinding wheel The lifespan of the grinding machine is extended, etc., and the efficiency of grinding work is improved, the quality of semiconductor products is stabilized, and the running cost of the grinding equipment is reduced.
第１図は本発明のモニター方法を実施した装置の主要部
の関係を示す構成図、第２図は一般の半導体ウェハー研
削工程を示す構成図である。
１・・・・・・ウェハー ２・・・・・・粗砥石、３・
・・・・・中砥石、４・・・・・・仕上げ砥石、５・・
・・・・研削水、６・・・・・・研削廃水、７・・・・
・・配管、８・・・・・・物理量測定部、９・・・・・
・中砥石高さ制御系。FIG. 1 is a block diagram showing the relationship between the main parts of an apparatus implementing the monitoring method of the present invention, and FIG. 2 is a block diagram showing a general semiconductor wafer grinding process. 1...Wafer 2...Rough grindstone, 3.
...Medium whetstone, 4...Finish whetstone, 5...
... Grinding water, 6... Grinding waste water, 7...
...Piping, 8...Physical quantity measurement section, 9...
・Middle whetstone height control system.
Claims (2)
において、一定量の研削水を与えながら前記半導体ウェ
ハー研削を行ない、切粉を含んだ研削廃水の物理量を測
定することによって研削量をモニターすることを特徴と
する半導体ウェハー研削量のモニター方法。(1) In the process of grinding the back surface of a semiconductor wafer with a rotary grindstone, the semiconductor wafer is ground while a certain amount of grinding water is applied, and the amount of grinding is monitored by measuring the physical quantity of the grinding waste water containing chips. A method for monitoring the grinding amount of a semiconductor wafer, characterized in that:
の範囲第１項に記載の半導体ウェハー研削量のモニター
方法。(2) The method for monitoring the amount of semiconductor wafer grinding according to claim 1, wherein turbidity is measured as a physical quantity of grinding wastewater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1155376A JPH0320029A (en) | 1989-06-16 | 1989-06-16 | Monitoring method for semiconductor wafer polishing amount |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1155376A JPH0320029A (en) | 1989-06-16 | 1989-06-16 | Monitoring method for semiconductor wafer polishing amount |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0320029A true JPH0320029A (en) | 1991-01-29 |
Family
ID=15604586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1155376A Pending JPH0320029A (en) | 1989-06-16 | 1989-06-16 | Monitoring method for semiconductor wafer polishing amount |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0320029A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0639534A2 (en) * | 1993-08-16 | 1995-02-22 | Ebara Corporation | Waste treatment system in a polishing apparatus |
| JP2020530946A (en) * | 2017-08-18 | 2020-10-29 | エスケイ・シルトロン・カンパニー・リミテッド | Wafer edge polishing part, wafer edge polishing device and method including this |
-
1989
- 1989-06-16 JP JP1155376A patent/JPH0320029A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0639534A2 (en) * | 1993-08-16 | 1995-02-22 | Ebara Corporation | Waste treatment system in a polishing apparatus |
| EP0639534A3 (en) * | 1993-08-16 | 1995-05-10 | Ebara Corp | Waste treatment system in a polishing apparatus. |
| EP0928777A1 (en) * | 1993-08-16 | 1999-07-14 | Ebara Corporation | Waste treatment system in a polishing apparatus |
| JP2020530946A (en) * | 2017-08-18 | 2020-10-29 | エスケイ・シルトロン・カンパニー・リミテッド | Wafer edge polishing part, wafer edge polishing device and method including this |
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