JPH03155611A - Ultra-short-wave ultraviolet ray exposure apparatus - Google Patents
Ultra-short-wave ultraviolet ray exposure apparatusInfo
- Publication number
- JPH03155611A JPH03155611A JP1295514A JP29551489A JPH03155611A JP H03155611 A JPH03155611 A JP H03155611A JP 1295514 A JP1295514 A JP 1295514A JP 29551489 A JP29551489 A JP 29551489A JP H03155611 A JPH03155611 A JP H03155611A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen gas
- ultra
- graphic
- short
- ultraviolet ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract 2
- 229910052734 helium Inorganic materials 0.000 claims abstract 2
- 239000011261 inert gas Substances 0.000 claims abstract 2
- 229910052743 krypton Inorganic materials 0.000 claims abstract 2
- 229910052754 neon Inorganic materials 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 229910052724 xenon Inorganic materials 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は極短波超紫外線露光装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an extremely short wave ultraviolet exposure apparatus.
従来、λ−250nm程度の短波長紫外線露光装置は、
水銀ランプやXeランプを外付けとし、反射光学系等を
用いて実用されていた。Conventionally, short wavelength ultraviolet exposure equipment of about λ-250nm,
It was put into practical use using an external mercury lamp or Xe lamp and a reflective optical system.
しかし、上記従来技術によると、水銀ランプやXeラン
プのランプ外壁に石英を用いる為に、ランプの放射光波
長は石英の吸収が200nm程度である為に、200n
m以下、1100n程度の極短波長紫外線を用いた露光
は不可能であると云う課題があった。However, according to the above-mentioned conventional technology, since quartz is used for the lamp outer wall of a mercury lamp or a Xe lamp, the wavelength of the emitted light from the lamp is 200nm because the absorption of quartz is about 200nm.
There was a problem in that exposure using extremely short wavelength ultraviolet rays of about 1100 nm or less was impossible.
本発明は、かかる従来技術の課題を解決し、λ=200
nm以下でλ−100nm程度の極短波長紫外線を用い
た露光装置を提供する事を目的とする。The present invention solves the problems of the prior art, and
It is an object of the present invention to provide an exposure apparatus that uses extremely short wavelength ultraviolet rays of about λ-100 nm or less.
上記課題を解決するために、本発明は、光源ランプの側
壁を無くし、反射光学系により、閉ざされた系内におい
て、極短波長紫外線露光を行なう手段をとる。In order to solve the above problems, the present invention eliminates the side wall of the light source lamp and uses a reflective optical system to perform extremely short wavelength ultraviolet exposure in a closed system.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、光源電極(W等)間に水素ガスを導入し、約λ1
100nの発光源を得、該発光源からの極短波長紫外線
を反射型マスクを反射させて、図形を反射し、凹凸鏡に
より等倍あるいは1/4倍に縮少投影して露光面上に図
形状に露光するに際し、これらの系を一つの閉ざされた
系となし、例えば水素ガス導入部からの水素ガスは、系
内に充満させるか、あるいは、光源外部の水素ガスは、
真空ポンプにより減圧状態にする事ができる。この様に
して得た極短波長紫外線露光では、全てが反射系であり
、極短波長紫外線の吸収もなく、且つ光学系雰囲気も極
短波長紫外線を吸収する事も少なく、微細な図形を効率
良く露光できることとなる。Now, hydrogen gas is introduced between the light source electrodes (W etc.) and the temperature is about λ1.
A 100n light emitting source is obtained, and the extremely short wavelength ultraviolet rays emitted from the light emitting source are reflected by a reflective mask to reflect the figure, and projected onto the exposure surface by reducing it to the same size or 1/4 times with a concave-convex mirror. When exposing a figure, these systems are treated as one closed system, and for example, hydrogen gas from the hydrogen gas inlet is filled in the system, or hydrogen gas outside the light source is
A vacuum pump can be used to create a reduced pressure state. The ultra-short wavelength ultraviolet rays obtained in this way are entirely reflective, and there is no absorption of ultra-short wavelength ultraviolet rays, and the atmosphere of the optical system hardly absorbs ultra-short wavelength ultraviolet rays, making it possible to efficiently produce fine patterns. This allows for good exposure.
本発明により、微細なパターン図形を効率良く露光でき
る極短波超紫外線露光装置を提供することができる効果
がある。The present invention has the advantage that it is possible to provide an extremely short wave ultraviolet exposure apparatus that can efficiently expose fine pattern figures.
以上that's all
Claims (1)
は水素ガスや不活性ガス(He、Ne、Ar、Kr、X
e等)にて閉ざされた系となす事を特徴とする極短波超
紫外線露光装置。The system including the reflective optical system, mask, exposure substrate, and light source electrode is heated with hydrogen gas or inert gas (He, Ne, Ar, Kr, X
An extremely short wave ultra-ultraviolet exposure device characterized by a closed system (e.g.).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1295514A JPH03155611A (en) | 1989-11-14 | 1989-11-14 | Ultra-short-wave ultraviolet ray exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1295514A JPH03155611A (en) | 1989-11-14 | 1989-11-14 | Ultra-short-wave ultraviolet ray exposure apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03155611A true JPH03155611A (en) | 1991-07-03 |
Family
ID=17821607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1295514A Pending JPH03155611A (en) | 1989-11-14 | 1989-11-14 | Ultra-short-wave ultraviolet ray exposure apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03155611A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122482A (en) * | 1989-03-31 | 1992-06-16 | Agency Of Industrial Science & Technology | Method for treating surface of silicon |
WO1998057213A1 (en) * | 1997-06-10 | 1998-12-17 | Nikon Corporation | Optical device, method of cleaning the same, projection aligner, and method of producing the same |
-
1989
- 1989-11-14 JP JP1295514A patent/JPH03155611A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122482A (en) * | 1989-03-31 | 1992-06-16 | Agency Of Industrial Science & Technology | Method for treating surface of silicon |
WO1998057213A1 (en) * | 1997-06-10 | 1998-12-17 | Nikon Corporation | Optical device, method of cleaning the same, projection aligner, and method of producing the same |
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