JPH03153599A - Production of thin film of cubic boron nitride - Google Patents
Production of thin film of cubic boron nitrideInfo
- Publication number
- JPH03153599A JPH03153599A JP29156389A JP29156389A JPH03153599A JP H03153599 A JPH03153599 A JP H03153599A JP 29156389 A JP29156389 A JP 29156389A JP 29156389 A JP29156389 A JP 29156389A JP H03153599 A JPH03153599 A JP H03153599A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- boron nitride
- cubic boron
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 7
- 229910052796 boron Inorganic materials 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 229930195733 hydrocarbon Natural products 0.000 abstract description 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、立方晶窒化ホウ素（以下ｃ−ＢＮと記す）薄
膜の作製方法に関する。より詳細には、半導体として使
用可能な高品質の単結晶ｃ−ＢＮ薄膜の作製方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing a cubic boron nitride (hereinafter referred to as c-BN) thin film. More specifically, the present invention relates to a method for producing a high quality single crystal c-BN thin film that can be used as a semiconductor.
従来の技術
窒化ホウ素ＢＮは、炭素とよく似た結晶構造を有し、そ
れぞれｈ−ＢＮ、ｃ−ＢＮおよびｗ−ＢＮと称される六
方晶、立方晶およびウルツ鉱型の３種類がある。これら
は、炭素ではそれぞれグラファイト、ダイアモンドおよ
びウルツ鉱型ダイアモンドに対応している。ＢＮは化学
的に安定な物質であり、特にｃ−ＢＮはダイアモンドに
次ぐ硬さを有する。BACKGROUND OF THE INVENTION Boron nitride BN has a crystal structure similar to that of carbon, and there are three types: hexagonal, cubic, and wurtzite, referred to as h-BN, c-BN, and w-BN, respectively. For carbon, these correspond to graphite, diamond, and wurtzite diamond, respectively. BN is a chemically stable substance, and c-BN in particular has a hardness second only to diamond.
ｃ−ＢＮの合成の代表的な方法は、グラファイトからダ
イアモンドを合成する場合と同様に、ｈ−ＢＮを高温、
高圧下で処理するものである。この方法で作製されるｃ
−ＢＮは数ｍｍ角のチップ状のものであり、切削材、研
磨材等に使用される。A typical method for synthesizing c-BN is to synthesize h-BN at high temperature, similar to the synthesis of diamond from graphite.
It is processed under high pressure. c produced by this method
-BN is chip-shaped, several mm square, and is used for cutting materials, abrasive materials, etc.
一方、ｃ−ＢＮは、その導電率、バンドギャップから半
導体としても期待されている。ｃ−ＢＮを半導体に使用
するには、低温、低圧の気相プロセスによる合成法が必
須であり、また薄膜化も考慮しなければならず、各種の
方法が研究されている。On the other hand, c-BN is expected to be used as a semiconductor due to its conductivity and bandgap. In order to use c-BN in semiconductors, a synthesis method using a low-temperature, low-pressure gas phase process is essential, and thinning of the film must also be considered, and various methods are being studied.
発明が解決しようとする課題
従来の低温、低圧の合成法で作製されたＢＮ薄膜は、は
とんどがｈ−ＢＮの薄膜であり、完全なｃ−ＢＮの薄膜
を作製することは困難であった。Problems to be Solved by the Invention BN thin films produced by conventional low-temperature, low-pressure synthesis methods are mostly h-BN thin films, and it is difficult to produce a complete c-BN thin film. there were.
また、稀にはｃ−ＢＨの薄膜を合成することもできたが
、半導体デバイスに使用できる高品質のものは得られな
かった。In addition, although it has been possible to synthesize c-BH thin films in rare cases, it has not been possible to obtain high-quality films that can be used in semiconductor devices.
そこで本発明の目的は、上記従来技術の問題点を解決し
た、高品質のｃ−ＢＮ薄膜が得られる作製方法を提供す
ることにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a manufacturing method that solves the above-mentioned problems of the prior art and allows a high-quality c-BN thin film to be obtained.
課題を解決するための手段
本発明に従うと、分子ビームエピタキシ法で立方晶窒化
ホウ素の薄膜を基板上に作製する方法において、マイク
ロ波放電により励起した活性なＮ２を窒素源として前記
基板近傍に供給し、基板近傍における反応により薄膜を
形成することを特徴とする立方晶窒化ホウ素薄膜の作製
方法が提供される。Means for Solving the Problems According to the present invention, in a method for producing a thin film of cubic boron nitride on a substrate by molecular beam epitaxy, active N2 excited by microwave discharge is supplied to the vicinity of the substrate as a nitrogen source. There is also provided a method for producing a cubic boron nitride thin film, which is characterized in that the thin film is formed by a reaction in the vicinity of a substrate.
直重
本発明の方法は、ＭＢＥ法で反応性の低いＮ２をマイク
ロ波放電により励起して基板近傍に供給し、金属ホウ素
の蒸気すたはＢ ２ Ｈｇ等のガスソースをクラブキン
グにより８分子線としたものと反応させて、ｃ−ＢＮ薄
膜を作製するところにその主要な特徴がある。The method of the present invention uses the MBE method, in which N2 with low reactivity is excited by microwave discharge and supplied near the substrate, and a gas source such as metal boron vapor or B 2 Hg is converted into 8 molecules by clubking. Its main feature is that it reacts with a wire to form a c-BN thin film.
本発明の方法によれば、活性の高いＮ２とホウ素を反応
させるので、高品質のｃ−ＢＮ薄膜が合成できる。また
、超高真空に排気した後に成膜が行われるため、チャン
バ内の残留ガス、例えばＨ，０や炭化水素等による汚染
を避けることができる。According to the method of the present invention, highly active N2 and boron are reacted, so a high quality c-BN thin film can be synthesized. Furthermore, since film formation is performed after evacuation to an ultra-high vacuum, contamination by residual gas in the chamber, such as H,0, hydrocarbons, etc., can be avoided.
特に、ホウ素は酸素と反応し易いため、チャンバ内の残
留ガスを低減することが重要である。In particular, since boron easily reacts with oxygen, it is important to reduce residual gas in the chamber.
以下、本発明を実施例により、さらに詳しく説明するが
、以下の開示は本発明の単なる実施例に過ぎず、本発明
の技術的範囲をなんら制限するものではない。EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention in any way.
実施例
第１図に、本発明の方法を実現する装置の一例の概略図
を示す。第１図の装置は、Ｍ Ｂ Ｅ装置であり、内部
を高真空に排気可能なチャンバ１と、内部に収納した蒸
発源１０の温度を制御して加熱でき、シャッタ８により
前記蒸発源１０の蒸発量を制御可能なりヌーセンセル（
Ｋ−セル）２と、搭載した基板５をヒータ４により温度
を制御して加熱可能な基板ホルダ３と、基板５の近傍で
開口し、マイクロ波電源７によるマイクロ波放電により
励起させたＮ２を基板５表面近傍に供給する石英管で構
成された反応ガス供給バイブロとを具備する。Embodiment FIG. 1 shows a schematic diagram of an example of an apparatus for implementing the method of the present invention. The device shown in FIG. 1 is an MBE device, which includes a chamber 1 that can be evacuated to a high vacuum, and an evaporation source 10 housed inside that can be heated by controlling the temperature. The amount of evaporation can be controlled using the Nutsen cell (
K-cell) 2, a substrate holder 3 that can heat the mounted substrate 5 by controlling the temperature with a heater 4, an opening near the substrate 5, and N2 excited by microwave discharge from a microwave power source 7. A reaction gas supply vibro configured with a quartz tube is provided to supply near the surface of the substrate 5.
反応ガス供給バイブロの先端はφｌ ＋ｎｍ程度に絞っ
である。また、図示されてはいないが、薄膜の結晶性お
よび表面状態を観察できるＲＨＥＥＤを具備する。The tip of the reaction gas supply vibrotube was narrowed to approximately φl + nm. Furthermore, although not shown, it is equipped with a RHEED capable of observing the crystallinity and surface condition of thin films.
第１図に示すＭＢＥ装置を用いて、単結晶３１基板の（
１１１）面上に、本発明の方法でｃ−ＢＨ膜を作製した
。チャンバは十分なベーキングを行った後、高真空排気
を行い、到達圧力は２．ｇｘｉｏ−” Ｔｏｒｒとした
。基板５の近傍には供給バイブロがらマイクロ波放電に
より励起させたＮ２を供給した。蒸発源には金属ホウ素
を用い、Ｋ−セルの温度を１７００℃とした。成膜中の
チャンバ１内の真空度は、５Ｘ １Ｏ−６Ｔｏｒｒで、
基板温度は７００℃とし、最終的に厚さ１００ ｒ＋ｍ
の薄膜を作製した。他の成膜条件を含めて以下に示す。Using the MBE apparatus shown in Fig. 1, a single crystal 31 substrate (
A c-BH film was fabricated on the 111) surface by the method of the present invention. After sufficient baking, the chamber is evacuated to a high vacuum, and the ultimate pressure is 2. N2 excited by microwave discharge was supplied near the substrate 5 from a supply vibrator. Metallic boron was used as the evaporation source, and the temperature of the K-cell was 1700°C. Film formation The degree of vacuum inside chamber 1 is 5X 1O-6 Torr,
The substrate temperature was 700℃, and the final thickness was 100r+m.
A thin film was prepared. Other film forming conditions are shown below.
基板温度 ニア００℃
チャンバ真空度 ： ５ Ｘｌ０−’ｔｏｒｒ反
応ガス供給１ ： ０．５ＳＣＣＵマイクロ波
放電部真空度： ０，５Ｔｏｒｒマイクロ波出力
＋ ２００Ｗ
成膜速度 二０．５人／秒得られた薄膜は
、ＲＨＥＥＤによる観察では、ｃ−ＢＮの単結晶であっ
た。この薄膜のＸ線回折パターンを第２図に示す。第２
図に示すよう、この薄膜のＸ線回折パターンには、Ｃ−
ＢＮの（ｌｉｌ）のピークのみが現れており単結晶であ
ることが確認できた。Substrate temperature: Near 00°C Chamber vacuum: 5 Xl0-'torr Reaction gas supply 1: 0.5 SCCU Microwave discharge section vacuum: 0.5 Torr Microwave output
+200W Film-forming rate: 20.5 persons/second The obtained thin film was observed to be a single crystal of c-BN by RHEED. The X-ray diffraction pattern of this thin film is shown in FIG. Second
As shown in the figure, the X-ray diffraction pattern of this thin film contains C-
Only the (lil) peak of BN appeared, confirming that it was a single crystal.
発明の効果
本発明の方法によれば、従来の方法では得られなかった
高品質のｃ−ＢＮ薄膜が得られる。これは、ＭＢＥ法で
マイクロ波放電で励起した活性なＮ２を基板近傍に供給
してホウ素と反応させる本発明に独特の方法によるもの
である。Effects of the Invention According to the method of the present invention, a c-BN thin film of high quality that could not be obtained by conventional methods can be obtained. This is due to a method unique to the present invention in which active N2 excited by microwave discharge is supplied near the substrate in the MBE method and reacts with boron.
８・・・シャッタ、 １０・・・蒸発源、8...Shutter, 10... Evaporation source,
Claims (1)
基板上に作製する方法において、マイクロ波放電により
励起した活性なＮ＿２を窒素源として前記基板近傍に供
給し、基板近傍における反応により薄膜を形成すること
を特徴とする立方晶窒化ホウ素薄膜の作製方法。In a method of producing a thin film of cubic boron nitride on a substrate by molecular beam epitaxy, active N_2 excited by microwave discharge is supplied near the substrate as a nitrogen source, and a thin film is formed by a reaction near the substrate. A method for producing a cubic boron nitride thin film characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29156389A JPH03153599A (en) | 1989-11-09 | 1989-11-09 | Production of thin film of cubic boron nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29156389A JPH03153599A (en) | 1989-11-09 | 1989-11-09 | Production of thin film of cubic boron nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03153599A true JPH03153599A (en) | 1991-07-01 |
Family
ID=17770542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29156389A Pending JPH03153599A (en) | 1989-11-09 | 1989-11-09 | Production of thin film of cubic boron nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03153599A (en) |
-
1989
- 1989-11-09 JP JP29156389A patent/JPH03153599A/en active Pending
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