JPH03153389A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH03153389A JPH03153389A JP1293158A JP29315889A JPH03153389A JP H03153389 A JPH03153389 A JP H03153389A JP 1293158 A JP1293158 A JP 1293158A JP 29315889 A JP29315889 A JP 29315889A JP H03153389 A JPH03153389 A JP H03153389A
- Authority
- JP
- Japan
- Prior art keywords
- information
- thin film
- semiconductor thin
- recording medium
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は光記録媒体に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to optical recording media.
［従来の技術］
基板上に形成した記録膜にレーザ光などの光を照射する
ことによって情報の記録、再生、消去を行う書き換え可
能な光記録媒体としては、下記の（１）ないしく３）に
示すものが知られている。[Prior Art] As a rewritable optical recording medium that records, reproduces, and erases information by irradiating a recording film formed on a substrate with light such as a laser beam, the following (1) or 3) are used. The following are known.
（１）光を照射するか、または温度を加えることによっ
て結晶構造が変わる記録膜を備えており、結晶構造の変
化による反射率の変化を利用して情報の再生を行う相変
化記録媒体。(1) A phase-change recording medium that is equipped with a recording film whose crystal structure changes by irradiating it with light or applying temperature, and reproduces information by utilizing changes in reflectance caused by changes in the crystal structure.
（２） Ｍｎ１ｌｉ、 ＴｂＰｅＣｏなどからなる光磁
気記録膜に光を照射し、温度を上昇さ仕、磁化を反転さ
せることにより情報の記録、消去を行い、磁気光学効果
（カー効果またはファラデー効果）を用いて情報を再生
する光磁気記録媒体。(2) Information is recorded and erased by irradiating a magneto-optical recording film made of Mn1li, TbPeCo, etc. with light, raising the temperature, and reversing the magnetization, producing a magneto-optic effect (Kerr effect or Faraday effect). A magneto-optical recording medium that is used to reproduce information.
（３）クロムを添加したルビー、酸化マンガンまたは酸
素を含む沃化カリウムなどからなる記録膜に特定周波数
の高強度の光を照射し、該特定周波敗の光に対する記録
膜の吸収率が増大するホールバーニング現象を生じさせ
ることによって情報を記録し、記録膜の吸収特性の差を
検出して情報を再生し、記録に用いた光とは異なる波長
の光を照射するか、または加熱することによって情報を
消去する光記録媒体。(3) A recording film made of ruby added with chromium, manganese oxide, or potassium iodide containing oxygen is irradiated with high-intensity light of a specific frequency, and the absorption rate of the recording film for the light of the specific frequency increases. Information is recorded by causing a hole burning phenomenon, information is reproduced by detecting the difference in the absorption characteristics of the recording film, and the information is reproduced by irradiating light with a wavelength different from that used for recording or by heating it. An optical recording medium that erases information.
特公昭５８−１７９９９号公報には、上記（１）の光記
録媒体として、アモルファス半導体薄膜に水素を含有す
る領域と水素を含有しない領域とがあり、光学吸収端の
移動に伴う吸収特性の差を検出することによって情報を
読み取る光メモリが示されている。また特開昭６０−８
７４４３号公報には、Ｏまたは１１が添加されたＳｉま
たはＧｅを主成分とし、かつ１族元累およびＶ族元素よ
りなる群から選ばれる不純物を含ｆｆする単結品半導体
材料に短波長の光を照射して半導体材料の光の吸収を大
きくすることによって情報を記録し、長波長の光を照射
するか、または加熱することによって情報を消去する先
メモリが示されている。Japanese Patent Publication No. 58-17999 discloses that, as the optical recording medium described in (1) above, an amorphous semiconductor thin film has a region containing hydrogen and a region not containing hydrogen, and the difference in absorption characteristics due to the movement of the optical absorption edge. An optical memory is shown that reads information by detecting . Also, JP-A-60-8
Publication No. 7443 discloses that a single crystal semiconductor material containing Si or Ge doped with O or 11 as a main component and containing an impurity selected from the group consisting of group 1 elements and group V elements is used for short-wavelength semiconductor materials. A memory is shown in which information is recorded by irradiation with light to increase the light absorption of the semiconductor material, and information is erased by irradiation with long wavelength light or heating.
［発明が解決しようとする課題］
上記の相変化記録媒体においては、情報を記録する場合
と消去する場合における記録材料の熱覆歴を相違させる
ことによって結晶構造を変化させていることから、高速
で情報を記録および消去することが困難である。また、
情報を消去する場合に消去残りが生じることがある。[Problems to be Solved by the Invention] In the above-mentioned phase change recording medium, the crystal structure is changed by changing the thermal history of the recording material when recording information and when erasing information. It is difficult to record and erase information. Also,
When erasing information, some residual information may be left behind.
特公昭５８−１７９９９号公報に記録の光メモリを加熱
する場合、情報を記録した部分（または情報を記録して
いない部分）の半導体薄膜に存在する水素が離脱するた
めに、記録した情報の内容が変化することがある。また
特開昭６０−８７４４３号公報に記載の光メモリは、情
報の記録または消去のための光照射に要する時間が１時
間以上であり、高速でｔｎ報毫記録または消去すること
ができない。According to Japanese Patent Publication No. 58-17999, when an optical memory for recording is heated, the hydrogen present in the semiconductor thin film in the area where information is recorded (or the area where information is not recorded) is released, causing the content of the recorded information to change. Subject to change. Further, in the optical memory described in Japanese Patent Application Laid-open No. 60-87443, the time required for light irradiation for recording or erasing information is one hour or more, and it is not possible to record or erase tn messages at high speed.
上記の光磁気記録媒体？こおいては、光磁気材料が酸化
され易い点、高い磁気光学効果を示す組成範囲が限られ
る点などから、光磁気材料の成膜条件を厳密に制御しな
ければならない。特に光磁気材料の主流である希土類元
素−遷移金属系材料については、その磁気光学効果が小
さいことから、記録特性および再生特性が劣る欠点があ
る。The magneto-optical recording medium mentioned above? In this case, the conditions for forming the film of the magneto-optical material must be strictly controlled because the magneto-optical material is easily oxidized and the composition range that exhibits a high magneto-optic effect is limited. In particular, rare earth element-transition metal materials, which are the mainstream of magneto-optical materials, have the disadvantage of poor recording and reproducing properties due to their small magneto-optic effect.
上記の光記録媒体は、多重記録することにより。The above-mentioned optical recording medium performs multiple recording.
記録の高密度化が可能であるが、□記録した情報の耐久
性が低い点、記録および消去の速度が低い点などの欠点
がある。Although high density recording is possible, there are drawbacks such as low durability of recorded information and low recording and erasing speeds.
本発明の目的は、情報を高密度で記録でき、かつ情報の
記録および消去を高速で行うことが可能な光記録媒体を
提供することにある。An object of the present invention is to provide an optical recording medium on which information can be recorded at high density and on which information can be recorded and erased at high speed.
［課題を解決するための手段］
本発明Ｉこよれば、上記の目的は、基板と半導体薄膜と
を備えており、光を照射することばこよって情報の記録
、再生および消去を行う光記録媒体において、半導体薄
膜がＳｉ、 Ｇｅｓ ＳｎおよびＣよりなる群から選ば
れる少なくとも２種の元素を９０〜１００原子数％含ん
でおり、情報を記録するために照射する先の波長をλ１
とし、情報を再生するた数をｈで表す場合、上記半導体
薄膜のエネルギーバンドＥｂが、
Ｅｂ＜（ｈ／λ１）、Ｒｈ＞（ｈ／λ１）、Ｅｂ＜（ｈ
／λ、）の関係にあることを特徴とする光記録媒体を提
供することＩこよって達成される。[Means for Solving the Problems] According to the present invention, the above object is to provide an optical recording medium that is provided with a substrate and a semiconductor thin film, and that records, reproduces, and erases information by words irradiated with light. , the semiconductor thin film contains 90 to 100 atomic percent of at least two elements selected from the group consisting of Si, GesSn, and C, and the wavelength of the irradiation target for recording information is λ1.
When the number of times to reproduce information is expressed as h, the energy band Eb of the semiconductor thin film is Eb<(h/λ1), Rh>(h/λ1), Eb<(h
/λ, ) This is achieved by providing an optical recording medium characterized by the relationship:
本発明の光記録媒体における半導体薄膜は１１ 。The semiconductor thin film in the optical recording medium of the present invention is 11.
ＦｋよびＣｅより〔る群から選ばれる少なくとも１種の
元素をＯ，ＯＯ１’ｌＯ［子数％含んでいることが好ま
しい。It is preferable that at least one element selected from the group consisting of Fk and Ce is contained in an amount of O, OO1'lO [child number %].
半導体薄膜の好ましい組成としては、Ｓｉ ［３０〜８
０原子数％（以下、これを％で表す）］−Ｇｅ（１０〜
４０％） −Ｃ（１（１〜３０％） 、５ｉ（３０〜８
０％） −８ｎ（１０〜４０％ ） −Ｃ（１０〜３８
％） 、Ｓｉ （７０〜９５％）−Ｃ（５〜３０％）
、Ｇｏ（５０〜７０％）−Ｃ（３０〜５０％） 、Ｓｉ
（３０〜７０％） −Ｓｎ （３０〜７０％ ） 、
Ｇｅ （３０〜７０％）−８ｎ（３０〜７０％）などが
挙げられる。また上記の組成の半導体薄膜がＨ、Ｆまた
はＣ（を含何する場合には、薄膜中のダングリングボン
ドの敗が変わるので、光学的性質を変化さ仕ろことがで
きる。１１、Ｆまたはｃｅの含有率が１０％より高い場
合には、半導体ＲＩＡが脆くなるので好ましくない、半
導体薄膜の光学的性質を変化さけるために、該半導体薄
膜は０．００１％以下のＰまたはＢを含んでいてもよい
。A preferable composition of the semiconductor thin film is Si[30-8
0 atoms% (hereinafter expressed as %)] -Ge (10~
40%) -C(1(1~30%), 5i(30~8
0%) -8n (10-40%) -C (10-38
%), Si (70-95%)-C (5-30%)
, Go (50-70%)-C (30-50%), Si
(30-70%) -Sn (30-70%),
Examples include Ge (30-70%)-8n (30-70%). Furthermore, when the semiconductor thin film having the above composition contains H, F or C, the loss of dangling bonds in the thin film changes, so the optical properties can be changed. If the content of CE is higher than 10%, the semiconductor RIA becomes brittle, which is undesirable.In order to avoid changing the optical properties of the semiconductor thin film, the semiconductor thin film contains 0.001% or less of P or B. You can stay there.
半導体薄膜の膜厚は、記録時、消去時または再生時に照
射される光に対する反射率が５％以上であり、かつ記録
時または消去時に照射される光の波長よりも薄いことが
好ましい。反射率が５％以下である場合には、記録時、
再生時または消去時にトラッキングを正確に行うことが
できず、安定した記録、再生または消去が困難になる。It is preferable that the thickness of the semiconductor thin film has a reflectance of 5% or more for light irradiated during recording, erasing, or reproduction, and is thinner than the wavelength of the light irradiated during recording or erasing. If the reflectance is less than 5%, when recording,
Tracking cannot be performed accurately during playback or erasing, making stable recording, playback, or erasing difficult.
また膜厚がｔｏｏｏ人より厚い場合には、記録または消
去のための光が膜内部まで届かず、膜内部では均一な光
誘起相転移が起こらず、書き込みノイズまたは消去残り
の原因になる。Furthermore, if the film is too thick, the light for recording or erasing will not reach the inside of the film, and a uniform photo-induced phase transition will not occur inside the film, resulting in writing noise or unerased remains.
半導体薄膜はスパッタリング法、真空蒸着法、ＣＶＤ法
などに上り製膜することが可能である。A semiconductor thin film can be formed by sputtering, vacuum evaporation, CVD, or the like.
本発明の光記録媒体に情報を記録するために照射する先
の波長λ、は５００〜８２０ｎｓの範囲にあり、情報を
再生するために照射する光の波長λ、は７８０〜９２０
ｎｍのＷ１１！ＩＩにあり、情報を消去するために照射
する先の波長λ３は３００〜７２０ｎ−の範囲にあるこ
とが好ましい。The wavelength λ of the light irradiated to record information on the optical recording medium of the present invention is in the range of 500 to 820 ns, and the wavelength λ of the light irradiated to reproduce information is 780 to 920 ns.
nm W11! II, and the wavelength λ3 of the irradiation target for erasing information is preferably in the range of 300 to 720 n-.
本発明の光記録媒体ζこ用いられる基板は、ガラス、ポ
リエステル樹脂、ポリオレフィン樹脂、ポリアミド樹脂
、ポリメタクリル樹脂、ポリカーボネイト樹脂、エポキ
シ樹脂などであることが好ましい。基板上にフロロカー
ボンなどからなる下引層を形成し、下引層の上に半導体
薄膜を形成してもよい。また半導体薄膜上に紫外線便化
樹脂などからなる保護膜を形成、することが、半導体薄
膜の耐酸化性を向上させる点、記録部と未記録部との光
学的コントラストを向上させる点などから好ましい。The substrate used in the optical recording medium of the present invention is preferably made of glass, polyester resin, polyolefin resin, polyamide resin, polymethacrylic resin, polycarbonate resin, epoxy resin, or the like. An undercoat layer made of fluorocarbon or the like may be formed on the substrate, and a semiconductor thin film may be formed on the undercoat layer. In addition, it is preferable to form a protective film made of ultraviolet ray-facilitating resin on the semiconductor thin film because it improves the oxidation resistance of the semiconductor thin film and improves the optical contrast between recorded areas and unrecorded areas. .
光記録媒体に情報を記録、消去または再生ずる場合のト
ラッキング方法またはフォーカシング方法としては従来
の３ビーム法、プッシュプル法なが採用される。A conventional three-beam method or push-pull method is used as a tracking method or focusing method when recording, erasing, or reproducing information on an optical recording medium.
［作 用］
上記の半導体薄膜に、情報を記録するために光を照射す
ると、光学的遷移によって照射部の電子構造が変化する
。電子構造の変化に対応して、半導体薄膜の結晶構造が
変化する光誘起相転移現象が生じ、記録ピットが形成さ
れる。半導体薄膜のエネルギーバンドは、情報を再生す
るために照射する先のエネルギーよりも大きいことから
、情報を再生する場合には、光誘起相転移現象は起こら
ない。一方、上記のエネルギーバンドよりも大きなエネ
ルギーを有する光を照射すると、電子構造が変化し、記
録ピットが消去される。したがって、本発明の光記録媒
体によれば、情報の古き換えを高速で行うことができる
。[Function] When the semiconductor thin film described above is irradiated with light to record information, the electronic structure of the irradiated portion changes due to optical transition. Corresponding to the change in electronic structure, a photo-induced phase transition phenomenon occurs in which the crystal structure of the semiconductor thin film changes, and recording pits are formed. Since the energy band of a semiconductor thin film is larger than the energy of the target to which information is irradiated for reproducing information, no photo-induced phase transition phenomenon occurs when reproducing information. On the other hand, when irradiated with light having energy greater than the above energy band, the electronic structure changes and the recorded pits are erased. Therefore, according to the optical recording medium of the present invention, information can be updated at high speed.
［実施例］ 以下、実施例により本発明を具体的に説明する。[Example] Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例１
ガラスｖｓ阪上にプラズマＣＶＤ法に従って次の操作（
１）ないしく３）を行うことにより、Ｓｉ、 Ｇｅおよ
びＣの３元素からなる半導体薄膜（膜厚６５０人）を製
膜した。（１）ヂャンバー内を５ｘ １０−”Ｔｏｒｒ
まで真空引きする。（２） Ｓ ｉ ＩＩ ａ、ＩＩｍ
およびＧｅ（Ｃｅｌｌｓ）ｉの３Ｕ類のガスを、これら
の分圧がＩ対８対Ｉとなるように導入したのち、 １３
．７ＭＩＩｚの高周波パワーを印加する。（３）ガラス
基板の温度が４００℃になるまで加熱する。Example 1 The following operations (
By carrying out steps 1) to 3), a semiconductor thin film (film thickness: 650 mm) consisting of three elements, Si, Ge, and C, was formed. (1) 5x 10-”Torr inside the chamber
Vacuum up to. (2) S i II a, IIm
After introducing 3U gases of Ge(Cells)i and Ge(Cells)i so that their partial pressures were I: 8: I, 13
．． Apply high frequency power of 7MIIz. (3) Heat the glass substrate until the temperature reaches 400°C.
上記の方法で製膜した半導体薄膜を軟Ｘ線励起光電子分
光法（ＥＳＣＡ法）で分計すると、該半導体薄膜は原子
数パーセントで５ｉｓａＧｅｓｓＣｔｔで表される組成
であった。また半導体薄膜の吸収端の測定を行うことに
よって求めたエネルギーバンドは１．９ｅＶであった。When the semiconductor thin film formed by the above method was measured by soft X-ray excited photoelectron spectroscopy (ESCA method), the semiconductor thin film had a composition expressed as 5isaGessCtt in atomic percent. The energy band determined by measuring the absorption edge of the semiconductor thin film was 1.9 eV.
波長が８３０ｎｓの半導体レーザの光に対する、この半
導体薄膜の反射率は４０％であった。波長が６５５ｎ−
の色素レーザの光を半導体薄膜に照射し、微小径の記録
ピットを形成した。波長が８３０ｎ−の半導体レーザの
光に対する、記録ピット部の反射率は３０％であり、こ
の半導体レーザを用いて記録した情報を再生することが
できた。The reflectance of this semiconductor thin film for light from a semiconductor laser having a wavelength of 830 ns was 40%. The wavelength is 655n-
The semiconductor thin film was irradiated with light from a dye laser to form recording pits with minute diameters. The reflectance of the recording pit portion to the light of the semiconductor laser having a wavelength of 830 n- was 30%, and the information recorded using this semiconductor laser could be reproduced.
半導体薄膜に波長が４５Ｏｎｓの色素レーザの光を照射
すると、記録ピット部の反射率は４０％Ｉこなり、記録
した情報は消去された。消去時におＩｊる消去残りは生
じなかった。また、半導体薄膜の耐候性は良好であった
。以上の結果から、本発明によれば、上記の半導体薄膜
を備えた書き換え可能型光記録媒体を提Ｕ（することが
できる。When the semiconductor thin film was irradiated with dye laser light having a wavelength of 45 Ons, the reflectance of the recording pit portion was 40% I, and the recorded information was erased. During erasing, no erased residue was generated. Moreover, the weather resistance of the semiconductor thin film was good. From the above results, according to the present invention, it is possible to provide a rewritable optical recording medium provided with the above semiconductor thin film.
上記の半導体薄膜を形成したガラス基板は、これを７７
Ｋに冷却したままで、上記と同様に情報の記録、再生お
よび消去が可能であった。このことから、記録のための
光を照射することにより半導体薄膜の微小部分が加熱さ
れ、熱的作用によって結品構造が変化して記録ピットが
形成されるのではなく、上記の光誘起相転移現象によっ
て記録ビットは形成されることが明らかである。The glass substrate on which the semiconductor thin film was formed was
It was possible to record, reproduce, and erase information in the same way as above while cooling to K. From this, it can be seen that by irradiating light for recording, a minute portion of the semiconductor thin film is heated, and the structure of the semiconductor thin film changes due to thermal action to form recording pits, but the photo-induced phase transition described above It is clear that recording bits are formed by the phenomenon.
実施例２
原子数パーセントで５ｉｆｆ４ＧＣ１ｓｓＣｙｔで表さ
れる組成の合金ターゲットを用い、分圧がそれぞれ０．
９ａ−Ｔｏｒｒ、 ０．１胃５ＴｏｒｒであるＡｒガス
および１１．ガスの混合ガス中で行うスパッタリング法
によって、実施例１と同じ組成の半導体記録膜（膜厚６
５０人）をポリカーボネイト基板上に形成した。この半
導体記録膜は情報の記録、再生およびｄ１去が可能であ
り、記録特性、再生特性および耐Ｉｊ！性は実施例Ｉに
おけると同等で、いずれら良好であった。Example 2 An alloy target having a composition expressed as 5iff4GC1ssCyt in atomic percent was used, and the partial pressure was 0.
9a-Torr, Ar gas at 0.1 gastric 5Torr and 11. A semiconductor recording film with the same composition as in Example 1 (thickness: 6
50 people) were formed on a polycarbonate substrate. This semiconductor recording film is capable of recording, reproducing, and removing information, and has recording characteristics, reproducing characteristics, and resistance to Ij! The properties were the same as those in Example I, and both were good.
実施例３〜１４
本発明の光記録媒体の曲の実施例を第１表に示す。第１
表の光記録媒体の記録特性、再生特性および耐候性はい
ずれら良好であった。Examples 3 to 14 Examples of songs on the optical recording medium of the present invention are shown in Table 1. 1st
The recording characteristics, reproduction characteristics, and weather resistance of the optical recording media shown in the table were all good.
以下余白
〔発明の効果〕
本発明によれば、情報を高密度で記録でき、かつ情報の
記録および消去を高速で行うことができる光記録媒体が
提供される。Margins below [Effects of the Invention] According to the present invention, an optical recording medium is provided in which information can be recorded at high density and information can be recorded and erased at high speed.
Claims (1)
とによって情報の記録、再生および消去を行う光記録媒
体において、半導体薄膜がＳｉ、Ｇｅ、ＳｎおよびＣよ
りなる群から選ばれる少なくとも２種の元素を９０〜１
００原子数％含んでおり、情報を記録するために照射す
る光の波長をλ＿１とし、情報を再生するために照射す
る光の波長をλ＿２とし、情報を消去するために照射す
る光の波長をλ＿３とし、ブランク定数をｈで表す場合
、上記半導体薄膜のエネルギーバンドＥｂが、 Ｅｂ＜（ｈ／λ＿１）、Ｅｂ＞（ｈ／λ＿２）、Ｅｂ＜
（ｈ／λ＿３）の関係にあることを特徴とする光記録媒
体。 ２、半導体薄膜がＨ、ＦおよびＣｌよりなる群から選ば
れる少なくとも１種の元素を０．００１〜１０原子数％
含んでいることを特徴とする請求項１記載の光記録媒体
。[Claims] 1. An optical recording medium comprising a substrate and a semiconductor thin film, in which information is recorded, reproduced, and erased by irradiation with light, wherein the semiconductor thin film is made of Si, Ge, Sn, and C. 90 to 1 of at least two elements selected from the group
The wavelength of light irradiated to record information is λ_1, the wavelength of light irradiated to reproduce information is λ_2, and the wavelength of light irradiated to erase information is λ_1. When λ_3 and the blank constant is expressed by h, the energy band Eb of the semiconductor thin film is Eb<(h/λ_1), Eb>(h/λ_2), Eb<
An optical recording medium characterized by having a relationship of (h/λ_3). 2. The semiconductor thin film contains 0.001 to 10 atomic percent of at least one element selected from the group consisting of H, F, and Cl.
The optical recording medium according to claim 1, characterized in that it comprises:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1293158A JPH03153389A (en) | 1989-11-09 | 1989-11-09 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1293158A JPH03153389A (en) | 1989-11-09 | 1989-11-09 | Optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03153389A true JPH03153389A (en) | 1991-07-01 |
Family
ID=17791172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1293158A Pending JPH03153389A (en) | 1989-11-09 | 1989-11-09 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03153389A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003101750A1 (en) * | 2002-06-03 | 2003-12-11 | Pioneer Corporation | Information recording medium and process for producing the same |
| WO2005018947A1 (en) * | 2003-08-21 | 2005-03-03 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
-
1989
- 1989-11-09 JP JP1293158A patent/JPH03153389A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003101750A1 (en) * | 2002-06-03 | 2003-12-11 | Pioneer Corporation | Information recording medium and process for producing the same |
| US7524612B2 (en) | 2002-06-03 | 2009-04-28 | Pioneer Corporation | Information recording medium and process for producing the same |
| WO2005018947A1 (en) * | 2003-08-21 | 2005-03-03 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
| US7381458B2 (en) | 2003-08-21 | 2008-06-03 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
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