JPH031532U - - Google Patents

Info

Publication number
JPH031532U
JPH031532U JP6052689U JP6052689U JPH031532U JP H031532 U JPH031532 U JP H031532U JP 6052689 U JP6052689 U JP 6052689U JP 6052689 U JP6052689 U JP 6052689U JP H031532 U JPH031532 U JP H031532U
Authority
JP
Japan
Prior art keywords
wafer
dry etching
electrode
light receiving
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6052689U
Other languages
Japanese (ja)
Other versions
JP2522803Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989060526U priority Critical patent/JP2522803Y2/en
Publication of JPH031532U publication Critical patent/JPH031532U/ja
Application granted granted Critical
Publication of JP2522803Y2 publication Critical patent/JP2522803Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の実施例１を示す縦断面図、第
２図は第１図の平面図、第３図は本考案の実施例
２を示す縦断面図、第４図は第３図の平面図、第
５図は従来の終点検出装置を示す縦断面図、第６
図ａ，ｂはウエハー近傍を示す縦断面図、第７図
ａ，ｂはレーザービーム反射強度の時間的変化を
示す図である。 １……ウエハー、２……カソード、３……アノ
ード、４……反応室、８……高周波電源、９……
マツチング回路、１０……レーザービーム発生ユ
ニツト、１１……ハーフミラー、１２……入射用
受光素子、１３……反射用受光素子、１４ａ〜１
４ｅ……モータ１７……θアライメントステージ
、１８……ｘｙアライメントステージ、１０１…
…入射レーザービーム、１０２……反射レーザー
ビーム、１０３……ウエハー傾斜角、１０４……
ビーム入射角、１０５……ビーム反射角、１０６
……ウエハー直交線。 Fig. 1 is a longitudinal sectional view showing Embodiment 1 of the present invention, Fig. 2 is a plan view of Fig. 1, Fig. 3 is a longitudinal sectional view showing Embodiment 2 of the invention, and Fig. 4 is Fig. 3. 5 is a vertical sectional view showing a conventional end point detection device, and FIG.
Figures a and b are longitudinal cross-sectional views showing the vicinity of the wafer, and Figures a and b are diagrams showing temporal changes in laser beam reflection intensity. 1... Wafer, 2... Cathode, 3... Anode, 4... Reaction chamber, 8... High frequency power supply, 9...
Matching circuit, 10... Laser beam generation unit, 11... Half mirror, 12... Light receiving element for incidence, 13... Light receiving element for reflection, 14a-1
4e...Motor 17...θ alignment stage, 18...xy alignment stage, 101...
...Incoming laser beam, 102...Reflected laser beam, 103...Wafer tilt angle, 104...
Beam incident angle, 105...Beam reflection angle, 106
...Wafer orthogonal line.

Claims (1)

【実用新案登録請求の範囲】 対向電極型ドライエツチング装置の一方の電極
上に載置されたウエハーの被エツチング面に対し
鉛直方向の反応室外に設けられたレーザー発振ユ
ニツト及び受光素子と、 前記レーザービーム発生ユニツト及び発光素子
のウエハー表面に対する位置角度を変化させる機
構とを有することを特徴とするドライエツチング
用終点検出装置。[Claims for Utility Model Registration] A laser oscillation unit and a light receiving element provided outside a reaction chamber in a direction perpendicular to the surface to be etched of a wafer placed on one electrode of a counter-electrode type dry etching apparatus; 1. An end point detection device for dry etching, comprising a beam generating unit and a mechanism for changing the position angle of a light emitting element with respect to a wafer surface.
JP1989060526U 1989-05-25 1989-05-25 End point detector for dry etching Expired - Lifetime JP2522803Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989060526U JP2522803Y2 (en) 1989-05-25 1989-05-25 End point detector for dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989060526U JP2522803Y2 (en) 1989-05-25 1989-05-25 End point detector for dry etching

Publications (2)

Publication Number Publication Date
JPH031532U true JPH031532U (en) 1991-01-09
JP2522803Y2 JP2522803Y2 (en) 1997-01-16

Family

ID=31587965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989060526U Expired - Lifetime JP2522803Y2 (en) 1989-05-25 1989-05-25 End point detector for dry etching

Country Status (1)

Country Link
JP (1) JP2522803Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274514U (en) * 1975-12-01 1977-06-03
WO2009119650A1 (en) * 2008-03-27 2009-10-01 日本電気株式会社 Etching end point detecting pattern and method for etching

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834309A (en) * 1981-08-25 1983-02-28 Nok Corp Noncontacting type surface nature measuring method
JPS61250520A (en) * 1985-04-30 1986-11-07 Hoya Corp Liquid level meter
JPS62203335A (en) * 1986-03-03 1987-09-08 Anelva Corp Etching monitor apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834309A (en) * 1981-08-25 1983-02-28 Nok Corp Noncontacting type surface nature measuring method
JPS61250520A (en) * 1985-04-30 1986-11-07 Hoya Corp Liquid level meter
JPS62203335A (en) * 1986-03-03 1987-09-08 Anelva Corp Etching monitor apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274514U (en) * 1975-12-01 1977-06-03
WO2009119650A1 (en) * 2008-03-27 2009-10-01 日本電気株式会社 Etching end point detecting pattern and method for etching

Also Published As

Publication number Publication date
JP2522803Y2 (en) 1997-01-16

Similar Documents

Publication Publication Date Title
JPH031532U (en)
JPS6351493B2 (en)
US4782382A (en) High quantum efficiency photodiode device
JPH10125268A (en) Electron beam generating device
JPH06134588A (en) Laser beam machine
CN221057832U (en) Three-path same-polarization passive phase-locked output solid laser
JPH0340480A (en) Semiconductor ring laser
JPH0178027U (en)
JPH0779040A (en) Unstable laser resonator
JPH025079U (en)
KAZUNORI et al. Integrated semiconductor laser device
JPS60164386A (en) Solid-state laser device for laser printing
RU96113347A (en) DEVICE FOR MAGNETIC LASER THERAPY
JPS6457243A (en) Scanning light beam generating device
JPS5917874B2 (en) Excitation light focusing device for dye laser
JPH0376179U (en)
MASAFUMI Semiconductor laser with monitoring output
JPS62189781A (en) Laser resonator
JP2733768B2 (en) Laser equipment
YOSHIMASA Semiconductor laser device
JPH01130253U (en)
JPH0275763U (en)
JPH0176033U (en)
JPH0377901U (en)
JPS63138991U (en)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term