JPH03152958A - Processing of polyimide film - Google Patents
Processing of polyimide filmInfo
- Publication number
- JPH03152958A JPH03152958A JP29274589A JP29274589A JPH03152958A JP H03152958 A JPH03152958 A JP H03152958A JP 29274589 A JP29274589 A JP 29274589A JP 29274589 A JP29274589 A JP 29274589A JP H03152958 A JPH03152958 A JP H03152958A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide film
- cured part
- semi
- etched
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 150000003949 imides Chemical class 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 150000001412 amines Chemical class 0.000 claims abstract description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 10
- 150000004996 alkyl benzenes Chemical class 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 26
- 239000004642 Polyimide Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路の多層配線の形成方法に関し、
特に眉間絶縁膜としてポリイミド膜を用いた加工方法に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming multilayer wiring of a semiconductor integrated circuit,
In particular, the present invention relates to a processing method using a polyimide film as an insulating film between the eyebrows.
従来ポリイミド膜にスルーホール加工する方法としては
、ウニ・ソＩ−エツチング法とドライエツチング法とが
あり、前者は使用するフォトレジストの種類によって、
ネガレジスト法とポジレジスト法とに分類されるので、
順を追って説明する。Conventional methods for forming through holes in polyimide films include the Uni-Solution I-etching method and the dry etching method.
It is classified into negative resist method and positive resist method.
I will explain step by step.
ネガレジスＩ・法においては、イミド重合が始まる２０
０〜２５０℃の温度でキュアしたポリイミド膜を、ネガ
レジストをマスクとして９０〜１１０℃のしドラジンな
どのアミン溶液で選択エツチングしたのち、通常のアル
キルベンゼンスルフォン酸を用いてネガレジストを剥離
する。In the NegaRegis I method, imide polymerization begins20
A polyimide film cured at a temperature of 0 to 250°C is selectively etched with an amine solution such as hydrodrazine at 90 to 110°C using a negative resist as a mask, and then the negative resist is peeled off using a common alkylbenzenesulfonic acid.
ポジレジスト法においては、ポリイミド膜をイミド重合
が起らない１００〜２００℃で乾燥したのち、テトラメ
チルアンモニウムハイドロオキサイド水溶液などのアル
カリ溶液を用いて、連続してポジレジストの溶解現像と
ポリイミド膜の選択エツチングを行なってから、ブチル
アセテ−１へなどでポジレジストを剥離する。In the positive resist method, after drying the polyimide film at 100 to 200°C, where imide polymerization does not occur, an alkaline solution such as an aqueous solution of tetramethylammonium hydroxide is used to continuously dissolve and develop the positive resist and form the polyimide film. After selective etching, the positive resist is removed using butyl acetate 1 or the like.
ドライエツチング法としては、ポリイミド膜をイミド重
合が完了する３００〜４００℃でキュアしてから、ポジ
レジストまたはネガレジス１−をマスクとして、酸素ガ
スを主体としたＲＩＥ法でポリイミド膜を選択エツチン
グしたのち、通常通りアルキルベンゼンスルフォン酸を
用いてフォトレジストを剥離する。The dry etching method involves curing the polyimide film at 300 to 400°C to complete imide polymerization, then selectively etching the polyimide film using a RIE method mainly using oxygen gas using a positive resist or negative resist 1- as a mask. , strip the photoresist using alkylbenzene sulfonic acid as usual.
従来の加工法では、多層配線のスルーホール口径や配線
幅の微細化に対処することができない。Conventional processing methods cannot cope with miniaturization of the through-hole diameter and wiring width of multilayer wiring.
ウェットエツチング法においては第３図に示すように、
ポリイミド膜６の加工後の形状が、フォトレジスト５の
開口寸法に比較して大きく開いなすりばち状になる。In the wet etching method, as shown in Figure 3,
The shape of the polyimide film 6 after processing becomes a dovetail shape with a larger opening compared to the opening size of the photoresist 5.
これはエツチング時のフォトレジスト５の膨潤や部分剥
離により、フォｌ〜レジストーポリイミド界面にエツチ
ング液が侵食した結果によるものである。This is due to the etching solution corroding the photoresist polyimide interface due to swelling and partial peeling of the photoresist 5 during etching.
このためエツチングの寸法ばらつきを考慮すると、開口
寸法が膜厚の２〜３倍の３〜５μｍが限度になっている
。Therefore, taking into consideration the dimensional variations in etching, the opening size is limited to 3 to 5 .mu.m, which is 2 to 3 times the film thickness.
一方ＲＩＥ法ではフォトレジストの開口寸法そのままに
、異方性エツチングが達成できるが、余りにも加工形状
が急峻であるために、第４図に示すように上層アルミニ
ウム配線７がスルーホールにおいて段切れするという問
題がある。On the other hand, with the RIE method, anisotropic etching can be achieved with the opening dimensions of the photoresist unchanged, but because the processed shape is too steep, the upper layer aluminum wiring 7 is broken at the through hole as shown in FIG. There is a problem.
通常のスバ・ツタ法によるアルミニウム膜形成方法では
、スルーホールの口径はポリイミドの膜厚の２倍が最小
限度とされている。In the ordinary method of forming an aluminum film using the Suba-Ivy method, the minimum diameter of the through-hole is twice the thickness of the polyimide film.
いずれにしても、層間絶縁膜として厚さ１．５μｍのポ
リイミド膜を用いる場合は、開口寸法３μｍが限界にな
っていた。In any case, when a polyimide film with a thickness of 1.5 μm is used as an interlayer insulating film, the opening size is limited to 3 μm.
本発明のポリイミドの加工法は、半導体基板表面に下層
ポリイミド膜を塗布し、熱処理してイミド重合を完了さ
せたのち、上層のポリイミド膜を塗布して不完全な熱処
理を行なってから、フォトリソグラフィにて上層の半硬
化部分をヒドラジンなとのアミン溶液でエツチングした
のち、酸素ガスを主体としたＲＩＥ法で下層の全硬化部
分をエツチングしてから、アルキルベンゼンスルフォン
酸などを用いてフォー・レジストを剥離したのち、最終
熱処理によって上層の半硬化部分のイミド重合を完了さ
せるものである。In the polyimide processing method of the present invention, a lower polyimide film is applied to the surface of a semiconductor substrate, heat treatment is performed to complete imide polymerization, an upper polyimide film is applied, incomplete heat treatment is performed, and then photolithography is performed. After etching the semi-hardened part of the upper layer with an amine solution such as hydrazine, the fully hardened part of the lower layer is etched by RIE method mainly using oxygen gas, and then a four-resist is applied using alkylbenzene sulfonic acid. After peeling, a final heat treatment completes the imide polymerization of the semi-cured portion of the upper layer.
本発明の目的は、層間絶縁膜としてポリイミドを用いて
、正確な開口寸法を確保しながら、上層のアルミニウム
配線の被覆性を実現することにある。An object of the present invention is to use polyimide as an interlayer insulating film to achieve coverage of upper layer aluminum wiring while ensuring accurate opening dimensions.
本発明の第１の実施例について、第１図（ａ＞〜（ｄ）
を参照して説明する９
半導体基板表面１に下層アルミニウム配線２を形成した
のち、下層ポリイミド膜３を回転塗布する
そのあと窒素オーブンに入れて、１００℃で１時間、２
５０℃で１時間、４ｏｏ℃で１時間引き続いて熱処理を
行ない、厚さ５０００人の下層ポリイミドｌｌｌ３を形
成する。Regarding the first embodiment of the present invention, FIG. 1 (a>-(d)
9 After forming the lower layer aluminum wiring 2 on the semiconductor substrate surface 1, the lower layer polyimide film 3 is spin-coated.Then, it is placed in a nitrogen oven and heated at 100°C for 1 hour for 2 hours.
Subsequent heat treatments are performed at 50° C. for 1 hour and at 400° C. for 1 hour to form a lower polyimide layer 113 with a thickness of 5000.
つぎに上層ポリイミド膜４を回転塗布し、窒素オーブン
に入れて、１００℃で１時間、２５０℃で３０分熱処理
を行なう。Next, the upper polyimide film 4 is spin-coated, placed in a nitrogen oven, and heat treated at 100° C. for 1 hour and 250° C. for 30 minutes.
続いてネガレジスト５ａを形成する。ネガレジスト５が
後続のＲＩＥ法によるドライエツチングに耐えるために
は、１．５μｍ以上の膜厚が必要である（第１図（ａ）
）。Subsequently, a negative resist 5a is formed. In order for the negative resist 5 to withstand dry etching by the subsequent RIE method, a film thickness of 1.5 μm or more is required (Fig. 1(a)).
).
つぎに第１図（ｂ）に示すように、ヒドラジンなどのア
ミン溶液を用いて上層のポリイミド４のエツチングを行
なう。Next, as shown in FIG. 1(b), the upper layer of polyimide 4 is etched using an amine solution such as hydrazine.
このとき下層のポリイミドはイミド結合が完全に終了し
ているため、はとんどエツチングされない
つぎに第１図（ｃ）に示すように、酸素ガスを主体とし
たガスを用いたＲＩＥにより、ネガレジスト５ａの開口
直下の下層ポリイミド４を異方性エツチングする。At this time, the polyimide in the lower layer is not etched because the imide bonds are completely completed.Next, as shown in FIG. 1(c), the negative layer is etched by RIE using a gas mainly composed of oxygen The lower polyimide layer 4 directly under the opening of the resist 5a is anisotropically etched.
つぎにアルキルベンスルフォン酸を用いてネガレジスト
５ａを剥離するく第１図（ｄ））。Next, the negative resist 5a is removed using alkylbensulfonic acid (FIG. 1(d)).
そのあと４００℃で１時間の加熱により、上層 − ポリイミド４の重合を完了させる。Then, by heating at 400℃ for 1 hour, the upper layer - Polymerization of polyimide 4 is completed.
つぎに本発明の第２の実施例を第２図（ａ）。Next, a second embodiment of the present invention is shown in FIG. 2(a).
（ｂ）を参照して説明する。This will be explained with reference to (b).
上層ポリイミド膜４を回転塗布するところまでは、第１
の実施例と同様である。Until the upper layer polyimide film 4 is spin-coated, the first
This is similar to the embodiment.
そのあと窒素オーブンに入れて、Ｉ ５０ ℃で１時間
熱処理を行なう。Thereafter, it is placed in a nitrogen oven and heat treated at I 50° C. for 1 hour.
つぎにポジレジスト５ｂを形成する。Next, a positive resist 5b is formed.
この場合は通常のアルカリ溶液による現像工程で、上層
ポリイミド４も同時にエツチングされるのは、従来技術
と同様である。In this case, the upper polyimide layer 4 is also etched at the same time in the normal alkaline solution development step, as in the prior art.
つぎにＲＩ Ｅ法で下層ポリイミド３を選択工・ソチン
グしてから、ブチルアセテートでボジレジス）５ｂを剥
離する。Next, the lower polyimide layer 3 is selectively etched and soothed using the RIE method, and then the polyimide layer 5b is peeled off using butyl acetate.
最後に窒素オーブンに入れて、２５０℃で１時間、４０
０℃で１時間加熱して、１層ポリイミド４のイミド重合
を完了する。Finally, put it in a nitrogen oven for 1 hour at 250℃ for 40 minutes.
The imide polymerization of the one-layer polyimide 4 is completed by heating at 0° C. for 1 hour.
本発明によりポリイミドを層間絶縁膜とした多層配線構
造において、スルーポールの口径を縮小することが可能
となり、かつスルーホールの形状を上層ポリイミドはテ
ーパー状に保ちながら、下層ポリイミドはＲ，Ｉ Ｅ法
により寸法通りに方向性上・ソチングするという、理想
的なパターン形成が実現された。According to the present invention, in a multilayer wiring structure using polyimide as an interlayer insulating film, it is possible to reduce the diameter of the through hole, and while keeping the shape of the through hole tapered in the upper layer polyimide, the lower layer polyimide can be formed using the R, IE method. The ideal pattern formation was achieved by directional soching according to the dimensions.
」二層ポリイミドがテーパー状に形成されることにより
、」二層アルミニウム配線の被覆性も改善されて、段切
れを解消することができた。``By forming the two-layer polyimide into a tapered shape,'' the coverage of the two-layer aluminum wiring was improved, and step breakage could be eliminated.
このため半導体集積回路の微細化、高速化、高集積化が
可能となった。This has made it possible to make semiconductor integrated circuits smaller, faster, and more highly integrated.
第１図（ａ）〜（ｄ）は本発明の第１の実施例を工程順
に示す断面図、第２図（ａ＞、（ｂ）は本発明の第２の
実施例を工程順に示す断面図、第３図はウェットエツチ
ング法による従来技術の問題点を示す断面図、第４図は
ＲＩＥ法による従来技術の問題点を示す断面図。
１・・・半導体基板、２・・・下層アルミニウム配線、
３・・・下層ポリイミド膜、４・・・上層ポリイミド膜
、５・・・フォトレジスト、５ａ・・ネガレジスト、５
１）・・・ポジレジスト、６・・・ポリイミド膜、７・
・・上層アルミニウム配線。FIGS. 1(a) to (d) are cross-sectional views showing the first embodiment of the present invention in the order of steps, and FIGS. 2(a) to (b) are cross-sectional views showing the second embodiment of the present invention in the order of steps. Figure 3 is a sectional view showing the problems of the conventional technique using the wet etching method, and Fig. 4 is a sectional view showing the problems of the conventional technique using the RIE method. 1... Semiconductor substrate, 2... Lower layer aluminum wiring,
3... Lower layer polyimide film, 4... Upper layer polyimide film, 5... Photoresist, 5a... Negative resist, 5
1)...Positive resist, 6...Polyimide film, 7.
...Top layer aluminum wiring.
Claims (1)
してイミド重合を完了させて全硬化部分を形成したのち
、上層ポリイミド膜を塗布して不完全な熱処理を行なっ
て半硬化部分を形成してから、フォトリソグラフィにて
半硬化部分をヒドラジンなどのアミン溶液でエッチング
して、酸素ガスを主体としたＲＩＥ法で全硬化部分をエ
ッチングしてから、アルキルベンゼンスルフォン酸など
を用いてフォトレジストを剥離したのち、最終熱処理に
よつて半硬化部分のイミド重合を完了させることを特徴
とするポリイミド膜の加工方法。A lower polyimide film is applied to the surface of the semiconductor substrate, heat-treated to complete imide polymerization to form a fully cured part, and then an upper polyimide film is applied and an incomplete heat treatment is performed to form a semi-hardened part. , After etching the semi-cured part using photolithography with an amine solution such as hydrazine, etching the fully cured part using RIE method mainly using oxygen gas, and then peeling off the photoresist using alkylbenzene sulfonic acid etc. A method for processing a polyimide film, characterized by completing imide polymerization of a semi-cured portion by final heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29274589A JPH03152958A (en) | 1989-11-09 | 1989-11-09 | Processing of polyimide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29274589A JPH03152958A (en) | 1989-11-09 | 1989-11-09 | Processing of polyimide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03152958A true JPH03152958A (en) | 1991-06-28 |
Family
ID=17785784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29274589A Pending JPH03152958A (en) | 1989-11-09 | 1989-11-09 | Processing of polyimide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03152958A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103851173A (en) * | 2012-12-06 | 2014-06-11 | 现代自动车株式会社 | Shifting apparatus for vehicle with DCT and control method thereof |
-
1989
- 1989-11-09 JP JP29274589A patent/JPH03152958A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103851173A (en) * | 2012-12-06 | 2014-06-11 | 现代自动车株式会社 | Shifting apparatus for vehicle with DCT and control method thereof |
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