JPH03150356A - Tungsten or molybdenum target and production thereof - Google Patents
Tungsten or molybdenum target and production thereofInfo
- Publication number
- JPH03150356A JPH03150356A JP28669989A JP28669989A JPH03150356A JP H03150356 A JPH03150356 A JP H03150356A JP 28669989 A JP28669989 A JP 28669989A JP 28669989 A JP28669989 A JP 28669989A JP H03150356 A JPH03150356 A JP H03150356A
- Authority
- JP
- Japan
- Prior art keywords
- target
- density
- sputtering
- tungsten
- hip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 24
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims description 14
- 239000010937 tungsten Substances 0.000 title claims description 14
- 239000011733 molybdenum Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- HHIQWSQEUZDONT-UHFFFAOYSA-N tungsten Chemical compound [W].[W].[W] HHIQWSQEUZDONT-UHFFFAOYSA-N 0.000 claims 1
- 238000001513 hot isostatic pressing Methods 0.000 abstract description 23
- 238000000034 method Methods 0.000 abstract description 17
- 239000002245 particle Substances 0.000 abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 10
- 238000007731 hot pressing Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 238000005336 cracking Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000009770 conventional sintering Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 238000005245 sintering Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000002285 radioactive effect Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Abstract
Description
〔産業上の利用分野〕
本発明は、半導体テパイスに使用される電極、配線材料
形成に用いられる高純度タングステンまたはモリブデン
ターゲットに関するものである。
〔従来の技術〕
近年の超ＬＳＩの高集積化に伴い、配線幅の減少、配線
長の増大により、配線材料の抵抗による信号遅延が間層
となり、より抵抗値の低い材料が要求されている。
ゲート電極材としては、抵抗値の低いタングステン、モ
リブデンなどの高融点金属が有望である。
タングステン、モリブデン膜の形成法としては、スパッ
タ法およびＣＶＤ法があるが、成膜の生産性および安定
性の面でスパッタ法が有利である。
スパッタ法で使用されるタングステンおよびモリブデン
スパッタリングターゲットの製造方法としては、電子ビ
ーム溶解などを利用した溶解法（特開昭６０−６６４２
５号、特開昭６１−１０７７２８号）とホットプレスな
どを利用した粉末−焼結法がある。[Industrial Field of Application] The present invention relates to a high-purity tungsten or molybdenum target used for forming electrodes and wiring materials used in semiconductor tapeis. [Prior art] With the recent increase in the integration of VLSIs, the wiring width has decreased and the wiring length has increased, resulting in signal delays due to the resistance of wiring materials, and materials with lower resistance values are required. . High melting point metals such as tungsten and molybdenum, which have low resistance values, are promising as gate electrode materials. Methods for forming tungsten and molybdenum films include sputtering and CVD, but sputtering is advantageous in terms of productivity and stability of film formation. The method for manufacturing tungsten and molybdenum sputtering targets used in the sputtering method is a melting method using electron beam melting (Japanese Patent Laid-Open No. 60-6642).
5, JP-A No. 61-107728) and a powder-sintering method using a hot press or the like.
しかし、溶解法で作製したインゴットは、タングステン
およびモリブデンが高融点くＷ ： ３４２２℃、Ｍｏ
： ２６２３℃）でかつ高純度であるため、結晶粒は
粗大化する。結晶粒が粗大化すると、その後の機械加工
時に容易に割れてしまう、また、結晶粒粗大化のターゲ
ットを用いてスパッタリングを実施した場合、結晶粒の
異方性のため均一な膜が形成されない。
この結晶粒粗大化を添加物により、防止する方法が提案
（特開昭６１−１１６８３５号参照）されているが、添
加物が膜特性を劣化する場合がある。
一方、粉末−焼結法で作製したターゲットは、結晶粒は
微細であるが、タングステン、モリブデンが高融点材料
であるため、高密度を得ることが極めて困難である。
例えば、比較的高融点（１９０５℃）の高Ｃｒ合金材の
高密度化手法として特公昭６０−５８２８９号に開示さ
れたものがある。特公昭６０−５８２８９号によると、
原料粉末に吸着しているガス、水分を除去してから特定
条件下で加圧焼結することによりほぼ真密度の焼結体が
得られているとしているが、Ｗ、ＭｏはＯｒより高融点
であり、特公昭６０−５８２８９号に開示される焼結温
度等の条件では、高密度化が困難であり、本発明者の検
討によると、ホットプレスまたはＨＩＰ（熱間静水圧プ
レス）処理では相対密度８５％程度が限度である。
処理条件を過酷（例えば保持温度１５００℃以上で２０
００ａｔ腸の高圧）にしてやれば、高密度が得られる可
能性があるが、設備的なことを考慮すると非現実的であ
る。密度の低いターゲットを用いてスパッタリングを実
施した場合、スパッタ時に割れる可能性が大きい、また
、生成された膜中のパーティクル（異物）数が著しく多
くなり、ウェハーの歩留低下の原因となる。
本発明は、以上の状況に鑑み、微ｍａｓｓであり、かつ
高密度を有するタングステンまたはモリブデンターゲッ
トおよびその製造方法の提供を課題とする。
【課題を解決するための手段Ｊ
本発明者は、前記目的を達成すべく種々検討した結果、
Ｗ、またはＭｏからなる予備焼結体を得たのち、熱間塑
性加工を施すことにより、微細組織を有し、かつ相対密
度が９９％真上の高密度の焼結体ターゲットを得ること
ができることを知見し、本発明を完成するに至った。
以下、本発明を詳細に説明する。
本発明において、まずＷ、Ｍｏの原料粉末が準備される
。
この原料粉末は、ターゲットとして高純度が要求される
ので、高純度であることが望ましく、特に９９．９９９
１以上の純度であることが望ましい、また。粉末の粒度
は、ＦＳＳＳ（フィッシャー粒度）で５ミ回以下である
ことが望ましい。
次いで、以上の粉末を用い、予備焼結体を製造する。
ここで焼結方法としては、通常の焼結の他、ＨＩＰ、ホ
ットプレス等の公知の焼結手段を採用することができる
。
次いで実施される熱間塑性加工の行程簡略化のためには
、予備焼結体の密度が高いことが望ましく、この場合、
焼結方法としてＨＩＰまたはホットプレスが望ましい。
ＨＩＰを適用する場合は、圧密用封入缶（以下ＨＩＰ缶
という）に粉末を充填し、１０ ｔｏｒｒ以上の真空下
で２００℃以上に加熱し、粉末に吸着したガス、水分を
除去することが要求される。ガス、水分が存在すると焼
結性の低下をまねくためである。この操作終了後、ＨＩ
Ｐ缶は真空脱気、封止され、ＨＩＰに供される。
ＨＩＰ条件としては、ＨＩＰ温度１１５０−１３５０℃
、ＨＩＰ圧力１０００ａｔｍ以上が望ましい。
ＨＩＰ温度を１１５０℃以上とするのは、この温度未満
では密度向上が十分に達成されず、また１３５０℃以下
とするのは、 １３５０℃を越えると組織が粗大化する
ためである。
また、ＨＩＰ圧力を１０００ａｔ−以上とするのは、１
０００ａｔ■未満では十分な密度向上を達成することが
困難だからである。
以上の条件によれば、相対密度８５％程度に圧密化され
た予備焼結体を得ることができる。
得られた予備焼結体に熱間塑性加工を施し、高密度化を
図る。例えば予備焼結体の密度が８５％程度の場合には
、６０％程度の加工率を付与することにより、９９．９
％以上のほぼ真密度の焼結体が得られる。
加工温度は、１２００〜ｔｓｏｏ℃の範囲が望ましい。
１２００℃未満では、密度向上が十分に達成されず、ま
た１５００℃を越えると組織の粗大化を招くためである
。
なお、熱間加工時の汚染は極力避ける必要があり、ＨＩ
Ｐによる場合は、焼結体が完全にＨＩＰ缶内に封入され
ているため、汚染は皆無であるが、その他の手段による
場合は予備焼結体をＨＩＰと同様に缶内に封入すること
が望まれる。
以上の方法によれば、平均粒径ｌＯミ■以下の微細組織
を有し、かつ相対密度９９％以上の高密度のタングステ
ンまたはモリブデンターゲットが得られる。
〔実施例〕
高純度タングステン粉末（Ｗ≧９９．９９９％〔放射性
元素含有量３ｐｐｂ以下、アルカリ金属含有量１００ｐ
Ｐｂ以下〕、粒度ＦＳＳＳ （フィッシャー粒度）で５
μ厘以下）を内容積４００ｘ３００ｘ３０（■）の圧密
用封入缶（ＨＩＰ缶）に充填し、５ Ｘ １１）” Ｔ
ｏｒｒに真空排気しながら、４００℃×５時間加熱し、
表面吸着ガスおよび水分を放出した。加熱脱気後封止し
、１２５０℃ｘ２時間、１０００ａｔｍの条件でＨＩＰ
処理を行なった。この時得られた焼結体の密度は相対密
度で８０−８５％である。
この後、ＨＩＰ缶ごと焼結体を１３００℃の温度で１回
の加工率１０〜３０％で断面が１１００Ｘ３３０閣で厚
みがｌＯ閣の寸法になるまで熱間圧延を数回繰り返した
。圧延後、１２００℃で歪取り焼鈍により加工歪を除去
した。得られた圧延材をＨＩＰ缶除去後、所定の形状に
機械加工し、φ３００■のターゲットを得た。
得られたターゲットの平均粒径は７μｌであった。
また相対密度は９９．９％以上でほぼ理論密度と同一の
値であった。純度的には製造工程中の汚染はなく、Ｗ≧
９９．９９９％［放射性元素含有量３ｐｐｂ以下、アル
カリ金属含有量１００ｐｐｂ以下であった。］、酸素は
２３０ｐｐｍと低い値であった。
本ターゲットで形成したスパッタリング膜は均一であり
、かつパーティクル数が５０ケフ６ｉｎｃｈウェハーで
あった。
（比較例）
高純度タングステン粉末（Ｗ≧９９．９９９％（放射性
元素含有量３ｐｐｂ以下、アルカリ金属含有量１００ｐ
Ｉ）ｂ以下〕、粒度ＦＳＳＳ （フィッシャー粒度）で
５μｌ以下）を内径φ４００■のダイスに充填し、１４
００℃Ｘ３００ｋｇ／ａｄ Ｘ０．５時間の条件でホッ
トプレスした。得られたホットプレス体を切削加工し、
φ３００閣のターゲットを得た。ターゲットの相対密度
は８３１であった。
本ターゲットで形成したスパッタリング膜中のパーティ
クル数は、２００ケ以上７６ｉｎｃｈウェハーで著しく
多く、ウェハー歩留低下の原因となった。
〔発明の効果〕
以上説明のように、本発明によると微細組織であり、か
つ相対密度９９％以上の高密度のタングステンまたはモ
リブデンターゲットを得ることができる。したがって、
ターゲットを機械加工する場合に割れを生じることもな
く、スパッタリングにおいても結晶粒の異方性がないた
め、均一な膜を形成することができる。
手続補正書（自発）
平成 ４ｒ２．５．２１２ 日
ｌ事件の表示
平成１年 特許願第２８６６９９号
２ 発 明 の 名 称 タングステンまたはモリブデ
ンターゲットおよびその製造方法
３補正をする者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁目１番２号
名 称 （５０８） 日立金属株式会社４
補正の対象
補正の内容
１０ 明細書の発明の詳細な説明の欄を以下のように補
正する。
（１） 明細書第４頁第１７行の「相対密度が９９％
冥土」を［相対密度が９９％以上Ｊに訂正する。
（２） 回書第５頁第１２行の「行程簡略化Ｊを「工
程簡略化」に訂正する。
（３） 回書第６頁第１〜第２行のｒＨＩＰ缶は真空
脱気、封止され、ＨＩ Ｐに供される。」を［ＨＩＰ缶
は封止され、ＨＩＰに供される。Ｊに訂正する。
（４） 回書第６頁第１９〜第２０行の「加工温度は
、１２００−１５００℃の範囲が望ましい、 １２００
℃未満では、密度向上が十分に達成されず、」の記載を
［加工温度は、１１００−１５００℃の範囲が望ましい
。
１１００℃未満では、熱間加工性が悪く、」に訂正する
。
（５） 同書第９頁第１７〜第１８行の「均一な膜を
形成することができる。」を「均一な膜を形成し、かつ
腹中のパーティクル数を著しく低減し。
ウェハー歩留りが向上する６Ｊに訂正する。
以上However, the ingot produced by the melting method has a high melting point of tungsten and molybdenum, W: 3422°C, Mo
: 2623°C) and high purity, the crystal grains become coarse. If the crystal grains become coarse, they will easily break during subsequent machining, and if sputtering is performed using a target with coarse grains, a uniform film will not be formed due to the anisotropy of the crystal grains. A method has been proposed (see Japanese Patent Laid-Open No. 116835/1983) to prevent this crystal grain coarsening using additives, but the additives may deteriorate the film properties. On the other hand, targets produced by the powder-sintering method have fine crystal grains, but it is extremely difficult to obtain high density because tungsten and molybdenum are high melting point materials. For example, Japanese Patent Publication No. Sho 60-58289 discloses a method for increasing the density of a high Cr alloy material having a relatively high melting point (1905° C.). According to Special Publication No. 60-58289,
It is said that a sintered body with almost true density is obtained by removing gas and moisture adsorbed on the raw material powder and then pressurizing it under specific conditions, but W and Mo have higher melting points than Or. Therefore, it is difficult to increase the density under the conditions such as the sintering temperature disclosed in Japanese Patent Publication No. 60-58289, and according to the study of the present inventor, hot pressing or HIP (hot isostatic pressing) treatment The relative density is about 85%. Severe processing conditions (e.g. holding temperature 1500℃ or higher for 200℃)
Although it is possible to obtain a high density if the pressure is set to 00at (high pressure of the intestine), it is unrealistic considering the equipment. When sputtering is performed using a target with a low density, there is a high possibility of cracking during sputtering, and the number of particles (foreign objects) in the generated film increases significantly, causing a decrease in wafer yield. In view of the above circumstances, an object of the present invention is to provide a tungsten or molybdenum target having a small mass and high density, and a method for manufacturing the same. [Means for Solving the Problems J] As a result of various studies to achieve the above object, the inventor has found that
After obtaining a preliminary sintered body made of W or Mo, it is possible to obtain a high-density sintered target having a fine structure and a relative density of just above 99% by performing hot plastic working. We have discovered that this can be done, and have completed the present invention. The present invention will be explained in detail below. In the present invention, raw material powders of W and Mo are first prepared. Since this raw material powder is required to have high purity as a target, it is desirable that the raw material powder has high purity, especially 99.999999999.
It is desirable that the purity is 1 or more. The particle size of the powder is preferably 5 microns or less in terms of FSSS (Fisher particle size). Next, a preliminary sintered body is manufactured using the above powder. Here, as the sintering method, in addition to normal sintering, known sintering means such as HIP and hot pressing can be employed. In order to simplify the subsequent hot plastic working process, it is desirable that the pre-sintered body has a high density, and in this case,
HIP or hot pressing is preferred as the sintering method. When applying HIP, it is required to fill the powder into a pressure-tight enclosure can (hereinafter referred to as HIP can) and heat it to 200°C or higher under a vacuum of 10 torr or higher to remove gas and moisture adsorbed to the powder. be done. This is because the presence of gas and moisture leads to a decrease in sinterability. After completing this operation, HI
The P can is vacuum degassed, sealed, and subjected to HIP. HIP conditions include HIP temperature 1150-1350℃
, HIP pressure of 1000 atm or more is desirable. The reason why the HIP temperature is set to 1150°C or higher is that the density cannot be sufficiently increased below this temperature, and the reason why the HIP temperature is set to 1350°C or lower is that if it exceeds 1350°C, the structure becomes coarse. In addition, setting the HIP pressure to 1000at- or more requires 1
This is because if it is less than 000at■, it is difficult to achieve a sufficient density improvement. According to the above conditions, a pre-sintered body consolidated to a relative density of about 85% can be obtained. The obtained pre-sintered body is subjected to hot plastic working to increase its density. For example, if the density of the preliminary sintered body is about 85%, by applying a processing rate of about 60%,
% or more can be obtained. The processing temperature is preferably in the range of 1200 to 200°C. This is because if the temperature is less than 1200°C, sufficient density improvement will not be achieved, and if it exceeds 1500°C, the structure will become coarse. In addition, it is necessary to avoid contamination during hot processing as much as possible, and HI
When using P, the sintered body is completely enclosed in the HIP can, so there is no contamination, but when using other means, the preliminary sintered body must be enclosed in the can in the same way as HIP. desired. According to the above method, a high-density tungsten or molybdenum target having a fine structure with an average grain size of 10 mm or less and a relative density of 99% or more can be obtained. [Example] High purity tungsten powder (W≧99.999% [Radioactive element content 3ppb or less, alkali metal content 100p
Pb or less], particle size FSSS (Fisher particle size) is 5
Fill a pressure-tight enclosure can (HIP can) with an internal volume of 400 x 300 x 30 (■) (5 x 11)" T
Heat at 400°C for 5 hours while evacuating to orr.
Surface adsorbed gas and moisture were released. After heating and degassing, seal and HIP at 1250°C x 2 hours at 1000 atm.
Processed. The density of the sintered body obtained at this time is 80-85% in terms of relative density. Thereafter, the sintered body together with the HIP can was hot-rolled several times at a temperature of 1300° C. at a processing rate of 10 to 30% each time until the cross section became 1100×330 mm and the thickness 10 mm. After rolling, processing strain was removed by strain relief annealing at 1200°C. After removing the HIP can, the obtained rolled material was machined into a predetermined shape to obtain a target with a diameter of 300 mm. The average particle size of the obtained target was 7 μl. Moreover, the relative density was 99.9% or more, which is almost the same value as the theoretical density. In terms of purity, there is no contamination during the manufacturing process, and W≧
99.999% [Radioactive element content was 3 ppb or less, alkali metal content was 100 ppb or less. ], the oxygen content was as low as 230 ppm. The sputtered film formed using this target was uniform and contained 50 particles on a 6-inch wafer. (Comparative example) High purity tungsten powder (W≧99.999% (radioactive element content 3ppb or less, alkali metal content 100p)
I) B or less], particle size FSSS (Fisher particle size), 5 μl or less) was filled into a die with an inner diameter of φ400■, and
Hot pressing was carried out under the conditions of 00°C x 300kg/ad x 0.5 hours. The obtained hot pressed body is cut,
Obtained the target of φ300 Kaku. The relative density of the target was 831. The number of particles in the sputtered film formed using this target was significantly greater than 200 particles on 76-inch wafers, which caused a decrease in wafer yield. [Effects of the Invention] As described above, according to the present invention, a tungsten or molybdenum target with a fine structure and a high density of 99% or more in relative density can be obtained. therefore,
Since cracks do not occur when machining the target and there is no anisotropy of crystal grains during sputtering, a uniform film can be formed. Procedural amendment (voluntary) 1999 1999 Patent application No. 286699 2 Name of the invention Tungsten or molybdenum target and its manufacturing method 3 Relationship to the person making the amendment Patent application Address 2-1-2 Marunouchi, Chiyoda-ku, Tokyo Name (508) Hitachi Metals Co., Ltd. 4
Target of amendment Contents of amendment 10 The column of detailed explanation of the invention in the specification is amended as follows. (1) “Relative density is 99%” on page 4, line 17 of the specification.
Correct ``Netherworld'' to ``Relative density is 99% or more J.'' (2) "Process simplification J" on page 5, line 12 of the circular is corrected to "process simplification." (3) The rHIP cans in lines 1 and 2 of page 6 of the circular are vacuum degassed, sealed, and subjected to HIP. ” [HIP The can is sealed and subjected to HIP. Correct to J. (4) Circular, page 6, lines 19-20, ``The processing temperature is preferably in the range of 1200-1500℃.
[The processing temperature is preferably in the range of 1100-1500°C. If the temperature is less than 1100°C, hot workability is poor.'' (5) In the same book, page 9, lines 17 to 18, "A uniform film can be formed" was changed to "A uniform film can be formed and the number of particles in the film can be significantly reduced. The wafer yield is improved. Corrected to 6J.
Claims (1)
密度が９９％以上であることを特徴とするタングステン
またはモリブデンターゲット。 ２ 高純度のタングステンまたはモリブデンの粉末原料
を用いて予備焼結体を製造し、ついで熱間塑性加工する
ことを特徴とするタングステンまたはモリブデンターゲ
ットの製造方法。[Scope of Claims] 1. A tungsten or molybdenum target characterized by having a fine structure with an average grain size of 10 μm or less and a relative density of 99% or more. 2. A method for producing a tungsten or molybdenum target, which comprises producing a pre-sintered body using a high-purity tungsten or molybdenum powder raw material and then subjecting it to hot plastic working.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1286699A JP2757287B2 (en) | 1989-11-02 | 1989-11-02 | Manufacturing method of tungsten target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1286699A JP2757287B2 (en) | 1989-11-02 | 1989-11-02 | Manufacturing method of tungsten target |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00715398A Division JP3244167B2 (en) | 1998-01-19 | 1998-01-19 | Tungsten or molybdenum target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03150356A true JPH03150356A (en) | 1991-06-26 |
| JP2757287B2 JP2757287B2 (en) | 1998-05-25 |
Family
ID=17707842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1286699A Expired - Lifetime JP2757287B2 (en) | 1989-11-02 | 1989-11-02 | Manufacturing method of tungsten target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2757287B2 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995016797A1 (en) * | 1993-12-14 | 1995-06-22 | Kabushiki Kaisha Toshiba | Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film |
| JP2002038258A (en) * | 2000-07-21 | 2002-02-06 | Toshiba Corp | Sputtering target |
| WO2006026621A2 (en) * | 2004-08-31 | 2006-03-09 | H.C. Starck Inc. | Molybdenum tubular sputtering targets with uniform grain size and texture |
| WO2007045387A1 (en) * | 2005-10-19 | 2007-04-26 | W.C. Heraeus Gmbh | Sputtering target made of multi-component alloys and production method |
| WO2009147900A1 (en) | 2008-06-02 | 2009-12-10 | 日鉱金属株式会社 | Tungsten sintered material sputtering target |
| JP4634567B2 (en) * | 2000-04-17 | 2011-02-16 | 株式会社東芝 | Method for manufacturing tungsten sputtering target |
| WO2011040400A1 (en) | 2009-10-01 | 2011-04-07 | Jx日鉱日石金属株式会社 | Method for producing high-purity tungsten powder |
| JP2011132563A (en) * | 2009-12-22 | 2011-07-07 | Toshiba Corp | Mo SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR |
| US8088232B2 (en) | 2004-08-31 | 2012-01-03 | H.C. Starck Inc. | Molybdenum tubular sputtering targets with uniform grain size and texture |
| CN102699626A (en) * | 2012-01-04 | 2012-10-03 | 洛阳科威钨钼有限公司 | Fabricating technique of tungsten plane targets |
| US8506882B2 (en) * | 2004-06-15 | 2013-08-13 | Tosoh Smd, Inc. | High purity target manufacturing methods |
| JP2014065972A (en) * | 2004-09-30 | 2014-04-17 | Kobe Steel Ltd | Hard film having excellent abrasion and oxidation resistances and target for formation of the same |
| US8900340B2 (en) | 2005-10-14 | 2014-12-02 | Plansee Se | Tubular target and production method |
| CN104508176A (en) * | 2012-11-02 | 2015-04-08 | 吉坤日矿日石金属株式会社 | Tungsten sintered body sputtering target and tungsten film formed using said target |
| WO2019092969A1 (en) * | 2017-11-10 | 2019-05-16 | Ｊｘ金属株式会社 | Tungsten sputtering target and method for producing same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174373A (en) * | 1985-10-04 | 1987-07-31 | Hitachi Metals Ltd | Chromium target material and its production |
| JPS63216966A (en) * | 1987-03-06 | 1988-09-09 | Toshiba Corp | Target for sputtering |
-
1989
- 1989-11-02 JP JP1286699A patent/JP2757287B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174373A (en) * | 1985-10-04 | 1987-07-31 | Hitachi Metals Ltd | Chromium target material and its production |
| JPS63216966A (en) * | 1987-03-06 | 1988-09-09 | Toshiba Corp | Target for sputtering |
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| US7153589B1 (en) | 1993-12-14 | 2006-12-26 | Kabushiki Kaisha Toshiba | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
| EP0947593A2 (en) * | 1993-12-14 | 1999-10-06 | Kabushiki Kaisha Toshiba | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
| WO1995016797A1 (en) * | 1993-12-14 | 1995-06-22 | Kabushiki Kaisha Toshiba | Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film |
| US6200694B1 (en) | 1993-12-14 | 2001-03-13 | Kabushiki Kaisha Toshiba | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
| US5913100A (en) * | 1993-12-14 | 1999-06-15 | Kabushiki Kaisha Toshiba | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
| EP0947593A3 (en) * | 1993-12-14 | 1999-12-15 | Kabushiki Kaisha Toshiba | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
| JP4634567B2 (en) * | 2000-04-17 | 2011-02-16 | 株式会社東芝 | Method for manufacturing tungsten sputtering target |
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| US9017600B2 (en) | 2004-08-31 | 2015-04-28 | H.C. Starck Inc. | Methods of forming molybdenum sputtering targets |
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| US8088232B2 (en) | 2004-08-31 | 2012-01-03 | H.C. Starck Inc. | Molybdenum tubular sputtering targets with uniform grain size and texture |
| JP2014065972A (en) * | 2004-09-30 | 2014-04-17 | Kobe Steel Ltd | Hard film having excellent abrasion and oxidation resistances and target for formation of the same |
| US8900340B2 (en) | 2005-10-14 | 2014-12-02 | Plansee Se | Tubular target and production method |
| US9890451B2 (en) | 2005-10-14 | 2018-02-13 | Plansee Se | Tubular target and production method |
| WO2007045387A1 (en) * | 2005-10-19 | 2007-04-26 | W.C. Heraeus Gmbh | Sputtering target made of multi-component alloys and production method |
| WO2009147900A1 (en) | 2008-06-02 | 2009-12-10 | 日鉱金属株式会社 | Tungsten sintered material sputtering target |
| US8764877B2 (en) | 2009-10-01 | 2014-07-01 | Jx Nippon Mining & Metals Corporation | Method for producing high-purity tungsten powder |
| WO2011040400A1 (en) | 2009-10-01 | 2011-04-07 | Jx日鉱日石金属株式会社 | Method for producing high-purity tungsten powder |
| JP2011132563A (en) * | 2009-12-22 | 2011-07-07 | Toshiba Corp | Mo SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR |
| CN102699626A (en) * | 2012-01-04 | 2012-10-03 | 洛阳科威钨钼有限公司 | Fabricating technique of tungsten plane targets |
| CN104508176A (en) * | 2012-11-02 | 2015-04-08 | 吉坤日矿日石金属株式会社 | Tungsten sintered body sputtering target and tungsten film formed using said target |
| WO2019092969A1 (en) * | 2017-11-10 | 2019-05-16 | Ｊｘ金属株式会社 | Tungsten sputtering target and method for producing same |
| US11939661B2 (en) | 2017-11-10 | 2024-03-26 | Jx Metals Corporation | Tungsten sputtering target and method for manufacturing the same |
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| JP2757287B2 (en) | 1998-05-25 |
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