JPH03104866A - Boron nitride coating film and formation thereof - Google Patents
Boron nitride coating film and formation thereofInfo
- Publication number
- JPH03104866A JPH03104866A JP24174489A JP24174489A JPH03104866A JP H03104866 A JPH03104866 A JP H03104866A JP 24174489 A JP24174489 A JP 24174489A JP 24174489 A JP24174489 A JP 24174489A JP H03104866 A JPH03104866 A JP H03104866A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- boron nitride
- layer
- coating film
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 48
- 239000011248 coating agent Substances 0.000 title claims abstract description 39
- 238000000576 coating method Methods 0.000 title claims abstract description 39
- 230000015572 biosynthetic process Effects 0.000 title description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052796 boron Inorganic materials 0.000 claims abstract description 29
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 29
- 239000010439 graphite Substances 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 7
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
ｍ−ｖ族、あるいはＩＩ−Ｖｌ族等の化合物半導体の育
戊に際して使用される炉材、治具に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention relates to furnace materials and jigs used in the growth of compound semiconductors such as those of the group M-V or group II-Vl.
［従来の技術］
ｍ−ｖ族、あるいはＩＩ−Ｖｌ族等の化合物半導体の育
成に際して使用される炉材、治具は、原料と反応せず、
かつ不純物を含まないものが必要とされる。このような
炉材や治具を製造する原料として、グラファイトや、化
学気相蒸着法により作成された乱相構造六方晶窒化ホウ
素（以下熱分解窒化ホウ素と示す）が使用されている。[Prior Art] Furnace materials and jigs used for growing compound semiconductors such as m-v group or II-Vl group do not react with raw materials;
A substance that does not contain impurities is also required. Graphite and hexagonal boron nitride with a disordered phase structure (hereinafter referred to as pyrolytic boron nitride) prepared by chemical vapor deposition are used as raw materials for manufacturing such furnace materials and jigs.
しかし、前者は大きなものは作戊できるものの、気孔が
あるためガスや不純物を吸蔵する欠点があり、後者は気
孔がなくガスや不純物を吸蔵するという欠点はないもの
の、大きなものは作或できないという欠点がある。However, although the former can produce large objects, it has the disadvantage of occluding gas and impurities due to its pores, while the latter has no pores and does not have the disadvantage of occluding gas and impurities, but cannot produce large objects. There are drawbacks.
近年、両者の欠点を補うために、グラファイトに熱分解
窒化ホウ素を被覆したものが製造され、使用されている
。これは、グラファイトに直接熱分解窒化ホウ素を１８
００゜Ｃ前後で被覆したものである。In recent years, graphite coated with pyrolytic boron nitride has been manufactured and used to compensate for the drawbacks of both. This involves applying 18 pyrolytic boron nitride directly to graphite.
It was coated at around 00°C.
［発明が解決しようとする課題］
しかしながら、上記材料で作或された治具は、グラファ
イトと窒化ホウ素被覆膜との密着力が弱く、異物と当た
ったり、摩擦されたりすることにより窒化ホウ素被覆膜
が簡単にはく離するという問題点がある。さらに、これ
らの治具は通常、室温からｉｏｏｏ ’ｃ以上に加熱さ
れ、また室温に戻されるという熱履歴を受けることにな
るが、この熱履歴によりグラファイトと窒化ホウ素被覆
膜とがはく離したり、窒化ホウ素被覆膜に亀裂が入った
りして、わずかな回数しか使用できないという問題点が
ある。これらの問題を解消するためにグラファイト表面
を適度に荒すことがなされているが充分な効果は得られ
ていない。[Problems to be Solved by the Invention] However, the jig made of the above-mentioned material has a weak adhesion between the graphite and the boron nitride coating, and the boron nitride coating may break down due to contact with foreign objects or friction. There is a problem that the coating film easily peels off. Furthermore, these jigs are usually subjected to a thermal history in which they are heated from room temperature to over iooo'c and then returned to room temperature, and this thermal history may cause the graphite and boron nitride coating to peel off. However, there is a problem in that the boron nitride coating film cracks and can only be used a small number of times. In order to solve these problems, attempts have been made to roughen the graphite surface to an appropriate degree, but sufficient effects have not been achieved.
本発明の目的はグラファイトと密着力が強く、何回も使
用することのできる窒化ホウ素被覆膜とその形成方法の
提供にある。An object of the present invention is to provide a boron nitride coating film that has strong adhesion to graphite and can be used many times, and a method for forming the same.
［課題を解決するための手段コ
上記課題を解決する本発明の被覆膜は、グラファイトの
表面に設けられた窒化ホウ素被膜において、ホウ素から
なる第１層と、ホウ素と窒素との比を窒化ホウ素にの比
になるまで連続的に変化させた窒素・ホウ素化合物から
なる第２層と、窒化ホウ素からなる最上層の３層によっ
て構成されることを特徴とする窒化ホウ素被覆膜であり
、好ましくは、第１層の厚さが０．００１ ｍｍ以上、
第２層の厚さが０．００１ ｍｍ以上、最上層の厚さが
０．０１ｍｍ以上である窒化ホウ素被覆膜であり、さら
に、本発明の方法は、グラファイト表面に化学気相蒸着
法により熱分解窒化ホウ素を被覆するに際して、第１層
としてホウ素を蒸着し、次いでホウ素と窒素の比を窒化
ホウ素の比になるまで連続的に変化させて窒素・ホウ素
化合物を蒸着し、最上層として窒化ホウ素を蒸着する方
法である。[Means for Solving the Problems] The coating film of the present invention that solves the above problems is such that, in the boron nitride film provided on the surface of graphite, the first layer made of boron and the ratio of boron to nitrogen are nitrided. A boron nitride coating film characterized by being composed of three layers: a second layer made of a nitrogen-boron compound that is continuously changed until the ratio becomes the same as that of boron, and an uppermost layer made of boron nitride, Preferably, the thickness of the first layer is 0.001 mm or more,
The method of the present invention is a boron nitride coating film in which the second layer has a thickness of 0.001 mm or more and the top layer has a thickness of 0.01 mm or more. In coating pyrolytic boron nitride, boron is deposited as the first layer, then a nitrogen-boron compound is deposited by continuously changing the ratio of boron to nitrogen until the ratio of boron nitride is reached, and the top layer is nitrided. This is a method of vapor depositing boron.
［作用］
本発明はグラファイト表面に設ける窒化ホウ素被覆膜を
３層構造とすることにより密着力を強化し、熱膨張率の
差による熱応力を緩和するものである。[Function] The present invention strengthens adhesion by forming the boron nitride coating film provided on the graphite surface into a three-layer structure, thereby alleviating thermal stress due to the difference in coefficient of thermal expansion.
グラファイトと被覆膜との密着力を飛躍的にまずために
は炭素とホウ素との間に化学結合を形或することが必要
である。しかし、窒化ホウ素とグラファイトとの間でこ
の反応を起こさせるためには２０００ ’Ｃ以上の温度
が必要とされ、現実的ではない。しかし、グラファイト
にホウ素を化学気相法で蒸着するとホウ素と炭素との強
固な結合を得ることができる。これが本発明において、
第ｌ相をホウ素相とする理由である。この第１層の厚さ
は、ホウ素と炭素との結合を確実なものとし、かつその
上に窒素・ホウ素化合物層を化学気相法で蒸着した際に
充分な密着力が得られるようにするためには０．００１
ｍｍ以上の厚さが必要であり、一方あまり厚くするこ
とは経済性を損うため０．１ｍｍ以下とすることが好ま
しいからである。In order to dramatically improve the adhesion between graphite and the coating film, it is necessary to form a chemical bond between carbon and boron. However, in order to cause this reaction between boron nitride and graphite, a temperature of 2000'C or more is required, which is not realistic. However, if boron is deposited on graphite by chemical vapor deposition, a strong bond between boron and carbon can be obtained. In the present invention, this is
This is the reason why the first phase is a boron phase. The thickness of this first layer ensures the bond between boron and carbon, and also ensures sufficient adhesion when a nitrogen-boron compound layer is deposited on top of it by chemical vapor deposition. 0.001 for
This is because a thickness of 0.1 mm or less is required, and on the other hand, making it too thick impairs economic efficiency.
第２相をホウ素と窒素の比を窒化ホウ素の比になるまで
連続的に変化させた窒素・ホウ素化合物層とするのは、
ホウ素層と窒化ホウ素層との熱膨張率の差による熱応力
を低下させるためである。The second phase is a nitrogen-boron compound layer in which the ratio of boron to nitrogen is continuously changed until it reaches the ratio of boron nitride.
This is to reduce thermal stress due to the difference in thermal expansion coefficient between the boron layer and the boron nitride layer.
この化合物層がいかなる構造と組成を持つかということ
を完全に解析することは困難である。しかし、本発明者
は、該化合物層の形成において原料ガスであるＢＣＩｓ
とＮＨ．との割合を連続的に変化させることから、非化
学量論組成の窒化ホウ素、あるいはホウ素と窒化ホウ素
とが微細に入交じったものと推定している。この第２層
の厚さを薄くすると熱応力の低減効果が充分でなく、あ
まり厚くすると経済性を失するため０．００１ ｍｍ以
上とすることが必要であり、０．５ｍｍ以下とすること
が好ましい。It is difficult to completely analyze the structure and composition of this compound layer. However, the present inventor discovered that BCIs, which is a raw material gas, in forming the compound layer.
and N.H. Since the ratio of boron and boron nitride changes continuously, it is presumed that boron nitride has a non-stoichiometric composition, or that boron and boron nitride are finely mixed. If the thickness of this second layer is made thin, the effect of reducing thermal stress will not be sufficient, and if it becomes too thick, economical efficiency will be lost. Therefore, it is necessary to make it 0.001 mm or more, and it is not recommended to make it 0.5 mm or less. preferable.
このようにして得られた第２層の上に窒化ホウ素を第３
層として化学気相法により蒸着することにより、本発明
の目的である密着力の強い窒化ホウ素被覆膜を得ること
ができる。第３層の厚さは、使用に際しての機械的強度
を考慮した厚さであればよ＜ 、０．０１ ｍｍ以上と
することが必要であり、経済性より １ ｍｍ以下とす
ることが望ましい。A third layer of boron nitride is deposited on the second layer thus obtained.
By depositing the material as a layer by chemical vapor deposition, a boron nitride coating film with strong adhesion, which is the object of the present invention, can be obtained. The thickness of the third layer needs to be at least 0.01 mm, as long as it takes into account mechanical strength during use, and is preferably at most 1 mm from economical considerations.
なお、本発明の窒化ホウ素被覆膜を得るに際しては、ホ
ウ素の蒸着より窒化ホウ素の蒸着に至るまで、膜生成は
連続的に行うことが必要である。In addition, in obtaining the boron nitride coating film of the present invention, it is necessary to perform film formation continuously from the evaporation of boron to the evaporation of boron nitride.
［実施例−１］
直径２００ ｍｍ長さ６００ ＋ｎｎ＋の石英管の上下
にステンレス製のフランジを接続した真空炉の内部に、
グラファイトフェルト断熱材をおき、その内側に直径１
００ ｍｍ ％長さ１００ ｍｍのグラファイト加熱体
を設置し、これを加熱すべく石英管外部に加熱用高周波
コイルが設けられ、蒸着原料ガスがグラファイト加熱体
の下部より２本のノズルによって導入され、上部から排
気されるようになった化学気相蒸着装置を用いて以下の
条件で窒化ホウ素被覆膜を形成した。[Example-1] Inside a vacuum furnace, stainless steel flanges were connected to the top and bottom of a quartz tube with a diameter of 200 mm and a length of 600 +nn+.
Place a graphite felt insulation material and have a diameter of 1 mm inside it.
A graphite heating element with a length of 100 mm was installed, and a heating high-frequency coil was provided outside the quartz tube to heat it, and the vapor deposition source gas was introduced from the bottom of the graphite heating element through two nozzles. A boron nitride coating film was formed under the following conditions using a chemical vapor deposition apparatus with exhaust from the top.
最初にｌ３００゜Ｃ， ２ ｔｏｒｒにてＢＣＩｍと１
１．とをそれぞれ８５、２００ ＳＣＣＭ （ｓｔｄ，
ｃｕｂｉｃ．ｃｍ／ｍｉｎ）の割合で装置内へ流入させ
、１５０分間蒸着し、次いで、流入ガス組成はそのまま
とし、３０分間かけて温度をｌ８００゜Ｃまで上昇させ
、ｌ８００ ゜Ｃで１２０分間蒸着し第２層を形成し
た。この第２層を形成するに際し、ＢＣＩｍの流入割合
を８５ ＳＣＣＭに維持したまま、■オをＮＨ．に逐次
置き換え、途中Ｈ，の割合を０とし、最終的にＮＨ．を
４００ＳＣＣＭにした。引続き、ＢＣ１ｉと ＮＨｉと
の流入量をそれぞれ８５、４００ ＳＣＣＭの割合に維
持したまま１８０分間の蒸着を行った。First, BCIm and 1 at 1300°C and 2 torr.
1. and 85 and 200 SCCM (std,
cubic. cm/min) into the apparatus for 150 minutes of evaporation, then, with the inlet gas composition unchanged, the temperature was raised to 1800 °C over 30 minutes, and the second deposition was performed at 1800 °C for 120 minutes. formed a layer. When forming this second layer, while maintaining the inflow rate of BCIm at 85 SCCM, , the ratio of H, is set to 0, and finally NH. was set to 400SCCM. Subsequently, evaporation was performed for 180 minutes while maintaining the inflow rates of BC1i and NHi at a ratio of 85 and 400 SCCM, respectively.
得られた窒化ホウ素被覆膜の第１層の厚さは０．０１
ｍｍであり、第２層の厚さは０．０２ｍｍであり、最上
層の窒化ホウ素膜の厚さは０．３５ｍｍであった。The thickness of the first layer of the obtained boron nitride coating film was 0.01
The thickness of the second layer was 0.02 mm, and the thickness of the top layer boron nitride film was 0.35 mm.
この被覆膜をドライバーで強く擦ったところ、表面の窒
化ホウ素層のみにわずかに傷を生じたのみであった。When this coating film was rubbed strongly with a screwdriver, only the boron nitride layer on the surface was slightly scratched.
［実施例−２コ
直径１００問、厚さ１０ ｍｍのグラファイト板に実施
例一ｌと同様にして全厚み０．３ｍｍの被覆膜を形成し
た。これを窒素雰囲気中１気圧下で室温から１８００
’Ｃまでの昇降温試験を１０回繰返した。その結果、な
んら異常は認められなかった。[Example 2] A coating film having a total thickness of 0.3 mm was formed on a graphite plate having a diameter of 100 pieces and a thickness of 10 mm in the same manner as in Example 11. This was heated from room temperature to 1,800 yen under 1 atm in a nitrogen atmosphere.
The temperature raising/lowering test up to 'C was repeated 10 times. As a result, no abnormality was observed.
［比較例−１］
実施例−１と同一の蒸着装置、グラファイトを用い、１
８００ ’Ｃ， ２ ｔｏｒｒで、ＢＣＩｓと ＮＨ．
とをそれぞれ８５、４００ ＳＣＣＭの割合に維持した
まま０．３ｍｍの厚さの窒化ホウ素被覆膜を形成し、試
料Ａを得た。次いで、新しいグラファイトに入替え、！
３００ ”Ｃ， ２ ｔｏｒｒにてＢＣＩ．とＨ，とを
それぞれ８５、２００ ＳＣＣＭ （ｓｔｄ．ｃｕｂｉ
ｃ．ｃｍ／ｗｉｎ）の割合で装置内へ流入させ、蒸着し
て０．０１ ｍｍの厚さのホウ素被覆膜形成し、次いで
、流入ガス組成はそのままとし、温度をｌ８００゜Ｃま
で上昇させた。[Comparative Example-1] Using the same vapor deposition apparatus and graphite as in Example-1, 1
At 800'C, 2 torr, BCIs and NH.
Sample A was obtained by forming a boron nitride coating film with a thickness of 0.3 mm while maintaining the ratios of 85 and 400 SCCM. Next, replace it with new graphite!
300"C, BCI. and H, at 2 torr, respectively 85 and 200 SCCM (std.cubi
c. The boron coating was vapor-deposited to form a boron coating film with a thickness of 0.01 mm.Then, the inflow gas composition was kept the same and the temperature was raised to 1800°C.
温度が１８００゜Ｃになった時点で流入ガスをＢＣＩｓ
とＮｌ！．とに切換えた。ＢＣＩ．とＮｌｌ．の流入割
合は、それぞれ８５、４００ ＳＣＣＭとした。この状
態で２４０分間蒸着してＯＪ５ｍｍの厚さの窒化ホウ素
被覆膜を形成し、試料Ｂを得た。When the temperature reaches 1800°C, the incoming gas is converted to BCIs.
and Nl! ．． I switched to. BCI. and Nll. The inflow rates were 85 and 400 SCCM, respectively. In this state, vapor deposition was performed for 240 minutes to form a boron nitride coating film with a thickness of OJ 5 mm, and sample B was obtained.
試料ＡとＢとの被覆膜をドライバーで強く擦ったところ
、Ａでは表面の窒化ホウ素被覆膜が簡単にグラファイト
からはく離し、Ｂでは被覆膜の窒化ホウ素層がはく離し
、グラファイト表面にはホウ素層が付着していた。When the coating films of samples A and B were strongly rubbed with a screwdriver, the boron nitride coating film on the surface of sample A was easily peeled off from the graphite, and the boron nitride layer of the coating film of sample B was peeled off and the surface of the graphite was peeled off. had a boron layer attached.
［比較例−２］
直径１００ ｎｕ＋＋，厚さｔｏ ｍｍのグラファイト
板に比較例−１と同様にして厚さＯＪｍｍの被覆膜を形
成し、試料Ａ’ 、Ｂ’ を得た。これを窒素雰囲気中
ｌ気圧下で室温から１８００″Ｃまでの昇降温試験を行
った。その結果、グラファイトに窒化ホウ素被覆膜を直
接形成したＡ′では１回ではく離が生じ、グラファイト
にホウ素被覆膜を設け、その上に窒化ホウ素被覆膜を設
けたＢ゜は３回の繰返しでクラックを生じた。[Comparative Example-2] A coating film having a thickness of OJmm was formed on a graphite plate having a diameter of 100 nu++ and a thickness of to mm in the same manner as in Comparative Example-1 to obtain samples A' and B'. This was subjected to a temperature raising/lowering test from room temperature to 1800''C under 1 atm in a nitrogen atmosphere.As a result, with A', in which a boron nitride coating film was directly formed on graphite, peeling occurred at one time, and boron on graphite B°, in which a coating film was provided and a boron nitride coating film was provided thereon, developed cracks after three repetitions.
［発明の効果］
本発明の被覆膜は、ホウ素層、窒素・ホウ素化合物層、
窒化ホウ素層の３層構造とすることにより、グラファイ
トとの密着性を強化し、熱膨張率の差による熱応力を緩
和することができるため従来のものより長寿命な炉材や
治具を作成でき、その結果、より高品質な結晶の育戊を
可能にする。[Effects of the invention] The coating film of the invention includes a boron layer, a nitrogen/boron compound layer,
The three-layer structure of boron nitride layers strengthens adhesion with graphite and alleviates thermal stress due to differences in thermal expansion coefficients, creating furnace materials and jigs that have a longer lifespan than conventional ones. As a result, it is possible to grow higher quality crystals.
Claims (3)
において、ホウ素からなる第１層と、ホウ素と窒素との
比を窒化ホウ素の比になるまで連続的に変化させた窒素
・ホウ素化合物からなる第２層と、窒化ホウ素からなる
最上層の３層によって構成されることを特徴とする窒化
ホウ素被覆膜。(1) In the boron nitride coating provided on the surface of graphite, the first layer is made of boron, and the second layer is made of a nitrogen-boron compound in which the ratio of boron to nitrogen is continuously changed until it reaches the ratio of boron nitride. A boron nitride coating film comprising three layers: two layers and an uppermost layer made of boron nitride.
１層の厚さが０．００１ｍｍ以上であり、第２層の厚さ
が０．００１ｍｍ以上であり、最上層の厚さが０．０１
ｍｍ以上である窒化ホウ素被覆膜。(2) In the boron nitride coating according to claim (1), the first layer has a thickness of 0.001 mm or more, the second layer has a thickness of 0.001 mm or more, and the top layer has a thickness of 0.001 mm or more. .01
A boron nitride coating film having a thickness of mm or more.
造六方晶窒化ホウ素を被覆するに際して、第１層として
ホウ素を蒸着し、次いでホウ素と窒素の比を窒化ホウ素
の比になるまで連続的に変化させて窒素・ホウ素化合物
を蒸着し、最上層として窒化ホウ素を蒸着することを特
徴とする窒化ホウ素被覆膜の形成方法。(3) When coating the graphite surface with turbostratic hexagonal boron nitride by chemical vapor deposition, boron is deposited as the first layer, and then the ratio of boron to nitrogen is continuously adjusted until the ratio of boron nitride is reached. 1. A method for forming a boron nitride coating film, the method comprising depositing a nitrogen-boron compound by varying the amount of nitrogen and boron, and depositing boron nitride as the top layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24174489A JPH03104866A (en) | 1989-09-20 | 1989-09-20 | Boron nitride coating film and formation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24174489A JPH03104866A (en) | 1989-09-20 | 1989-09-20 | Boron nitride coating film and formation thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03104866A true JPH03104866A (en) | 1991-05-01 |
Family
ID=17078899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24174489A Pending JPH03104866A (en) | 1989-09-20 | 1989-09-20 | Boron nitride coating film and formation thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03104866A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007021190A (en) * | 2006-05-17 | 2007-02-01 | Shu Nakamura | Artificial nipple |
-
1989
- 1989-09-20 JP JP24174489A patent/JPH03104866A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007021190A (en) * | 2006-05-17 | 2007-02-01 | Shu Nakamura | Artificial nipple |
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