JPH0272692A - Wiring board and forming method thereof - Google Patents
Wiring board and forming method thereofInfo
- Publication number
- JPH0272692A JPH0272692A JP22233188A JP22233188A JPH0272692A JP H0272692 A JPH0272692 A JP H0272692A JP 22233188 A JP22233188 A JP 22233188A JP 22233188 A JP22233188 A JP 22233188A JP H0272692 A JPH0272692 A JP H0272692A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- insulating film
- polyimide
- wiring board
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 37
- 229920001721 polyimide Polymers 0.000 claims abstract description 81
- 238000007747 plating Methods 0.000 claims abstract description 44
- 238000007772 electroless plating Methods 0.000 claims abstract description 21
- 239000009719 polyimide resin Substances 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 5
- 125000003118 aryl group Chemical group 0.000 claims abstract description 4
- 125000000962 organic group Chemical group 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 18
- 230000012010 growth Effects 0.000 claims description 10
- 238000013007 heat curing Methods 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 abstract description 54
- 239000010408 film Substances 0.000 abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052802 copper Inorganic materials 0.000 abstract description 17
- 239000010949 copper Substances 0.000 abstract description 17
- 239000010409 thin film Substances 0.000 abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 11
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000003513 alkali Substances 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract description 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 46
- 239000000243 solution Substances 0.000 description 44
- 229910000831 Steel Inorganic materials 0.000 description 19
- 239000010959 steel Substances 0.000 description 19
- 239000002243 precursor Substances 0.000 description 18
- 239000002966 varnish Substances 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 239000004952 Polyamide Substances 0.000 description 10
- 229920002647 polyamide Polymers 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 7
- 210000004907 gland Anatomy 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920005575 poly(amic acid) Polymers 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 241000272201 Columbiformes Species 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 241001092070 Eriobotrya Species 0.000 description 2
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000254158 Lampyridae Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- -1 potassium ferricyanide Chemical compound 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高集積LSIなどを実装することに好適な配
線基板およびその形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wiring board suitable for mounting highly integrated LSIs and a method for forming the same.
大型計算機に用いられているプリントキ板は、高機能化
、小型化、烏佃租化、低コスト化のために、高@度すな
わち多層化が進められている。Printed keyboards used in large-scale computers are becoming more sophisticated, that is, multi-layered, in order to achieve higher functionality, smaller size, smaller size, and lower cost.
この除、導体層と導体層にはさまれる絶縁層には、ガラ
ス転移点が尚く、耐熱性に優れ、熱膨張率が小さ(、ス
ルーホールのfit租性の確保に優れたポリイミド樹脂
か好ましく用いられている。さらに、このポリイミドm
B″fiは、必要な場合には感光性を付与することも可
能である。In addition, the conductor layer and the insulating layer sandwiched between the conductor layers are made of polyimide resin, which has a high glass transition point, excellent heat resistance, and a small coefficient of thermal expansion. It is preferably used.Furthermore, this polyimide m
B″fi can also impart photosensitivity if necessary.
一方、従米知られている多層配m!造体の製造方法とし
ては、特開昭62−222696号公報に記載されてい
る技術かある。この方法は、基板上に下地金h4鳩を形
成し、ドライエツチング等で配鰍パターン形状にパター
ニングして、下地象鵜層表面か蕗出するように溝加工さ
れたポリイミド系倒脂絶練層を形成し、この絶縁層をめ
っきレジストとして、加工溝内部の下地金属層上に、選
択的に無電解めっき法により導体配線を形成している。On the other hand, Jumei is known for its multi-layered design! As a method for manufacturing the structure, there is a technique described in Japanese Patent Application Laid-Open No. 62-222696. This method involves forming a base metal H4 layer on a substrate, patterning it into a ferrule pattern shape by dry etching, etc., and then forming a polyimide-based refractory layer with grooves so as to protrude from the surface of the base layer. is formed, and using this insulating layer as a plating resist, conductor wiring is selectively formed on the base metal layer inside the processed groove by electroless plating.
〔発明か解決しようと1−る課題〕
上B己従米孜術は、めっきレジストとなるポリイミド糸
@庸杷w族の無電解めつき取に対する耐性について配慮
されていなかった。[Problems to be Solved by the Invention] The above technique did not take into account the resistance of the polyimide yarn @Yongbo w family, which serves as the plating resist, to electroless plating.
すなわち、無電解めっき液は、pH10〜13の彊アル
カリであるのに対して、通常のポリイミド樹脂はアルカ
リ耐性か低いので、無電解めっき法により導体配線を形
成する場合に、ポリイミド側刀ぽが表層からめっき撤甲
に俗解してしまう。In other words, the electroless plating solution is alkali with a pH of 10 to 13, whereas ordinary polyimide resin has low alkali resistance. It is commonly understood that plating is removed from the surface layer.
このため、めっき液の組成に変化か生じ、めつぎ金属層
の成長速度が遅(なり、生産性か恋く、また、パターン
が(ずれてしまい、アスペクト比の高い配線が形成でき
ない。さらに、絶縁層が薄くなり、厚い配線層が形成で
きない寺の問題かあった。As a result, the composition of the plating solution changes, the growth rate of the plating metal layer becomes slow, productivity decreases, and the pattern becomes misaligned, making it impossible to form wiring with a high aspect ratio. There was a problem that the insulating layer became thinner and thick wiring layers could not be formed.
本発明の目的は、上記した従来技術の問題点を解決し、
アスペクト比が尚(、配線層の厚いi1!l、密度の配
線パターンを生庄性良(形成し得る配線基板およびその
形成方法を提供することにある。The purpose of the present invention is to solve the problems of the prior art described above,
The object of the present invention is to provide a wiring board and a method for forming the same, which can form a wiring pattern with a high aspect ratio, a thick wiring layer (i1!l), and a high density.
上記目的は、基板上にめっぎ成長用導体パターンを設け
ると共に、該パターン上で開口する溝を有する絶#Mを
設け、かつ、該溝内に導体配線を設けてなる配線パター
ンを有する配滋基似において、
上記絶縁族を、下B己一般式〔I〕の繰り返し単位を主
成分とするポリイミド両刀dにて形成することを特徴と
する配線基板によって:!Eされる。The above object is to provide a conductor pattern for plating growth on a substrate, provide an insulator #M having a groove opening on the pattern, and provide a wiring pattern in which a conductor wiring is provided in the groove. According to Shigeki, by a wiring board characterized in that the above-mentioned insulating group is formed of a polyimide d whose main component is a repeating unit of the general formula [I]:! E is done.
但し、−収式(1)においてRは二1曲の芳香族有機基
を表わす。However, in formula (1), R represents an aromatic organic group.
本発明の配線基板は、導体配線と絶fIiR朕とからな
る配称パターン層を複数m核層して多増配林基板として
もよい
さらに、本発明の配線基板は、ハイブリッドICの検電
に用いてもよい。The wiring board of the present invention may be made into a multi-wire board by forming a plurality of core layers of patterned layers each consisting of a conductor wiring and an insulated wire. It's okay.
一方、上記配稼基板を形成する方法として、本発明は、
基板上に、めっき成長用導体パターンを形成し、さらに
、該導体パターンを含めて上記基板上に絶縁族を形成し
、この絶縁族に、上配尋体パターン上で開口する溝を刀
ロエ形成し、ついで、該溝内に無電解めっき法によって
導体を形成充填して導体配線を形成する配線基板形成方
法において、
上記した一般式〔I〕の繰り返し単位を主成分とするポ
リイミド樹脂により、上記杷城腺を形成すること特徴と
する配線基板形成方法を提供する。On the other hand, the present invention provides a method for forming the above-mentioned distribution board.
A conductive pattern for plating growth is formed on the substrate, and an insulating layer including the conductive pattern is formed on the substrate, and a groove that opens on the upper interlayer pattern is formed in the insulating layer. Then, in a method for forming a wiring board in which a conductor is formed and filled in the groove by electroless plating to form a conductor wiring, the above-mentioned A method for forming a wiring board is provided, which is characterized by forming a locus gland.
本発明の配線基板形成方法は、絶域膜に、加熱硬化によ
って一般式〔■°〕の繰り返し単位を主成分とするポリ
イミド樹B*に転化される感光性ポリイミド樹脂を用い
てもよい。In the method for forming a wiring board of the present invention, a photosensitive polyimide resin which is converted into a polyimide tree B* whose main component is a repeating unit of the general formula [■°] by heat curing may be used for the barrier film.
さらに、配線基板形成方法は、導体配線層と絶縁膜から
なる配詠パターン層を複数層槓層してもよい。Further, in the method for forming a wiring board, a plurality of distribution pattern layers including a conductive wiring layer and an insulating film may be layered.
不発明で用いるポリイミド樹刀旨は、−設入〔I〕の繰
り返し単位を主成分とするポリマであり、無電解めっき
液耐性、耐熱性、杷#腺時性を備えるものである。The polyimide resin used in the present invention is a polymer whose main component is a repeating unit of -[I], and has electroless plating solution resistance, heat resistance, and loquatability.
一般式〔I〕のRの具体例としては、 などか亭げられる。Specific examples of R in general formula [I] are: And so on.
本発明で用いるポリイミド樹脂は、以下の方法で基板上
に絶域膜として形成される。すなわち、ポリアミド戚(
ポリイミド前駆体)ワニスを、基板上に塗布し、150
℃以上500℃以下の範囲で加熱、硬化してポリイミド
wAVi層とする。A&への塗布には、回転塗布、浸漬
、噴霧、印刷などの手段から適宜選択できる。The polyimide resin used in the present invention is formed as an isolation film on a substrate by the following method. That is, polyamide relatives (
Apply varnish (polyimide precursor) on the substrate,
The polyimide wAVi layer is heated and cured at a temperature of 500° C. or higher and 500° C. or lower. Application to A& can be appropriately selected from methods such as spin coating, dipping, spraying, and printing.
ポリイミド樹脂の再加工方法としては、周知のウェット
エツチング法あるいはドライエツチング法が挙げられる
。ウェットエツチング法では、ポリイミド街脂層上にフ
ォトレジストを塗布、乾燥し、所定のフォトマスクを用
いてフォトレジストを処光して、境像、乾燥し、所定の
パターンを得る。この後、エツチングによりポリイミド
1腫屡の所定の部分を選択的に除去し、不要となったフ
ォトレジストを除去することでポリイミド倒加鳩に加工
佛が形成される。Examples of methods for reprocessing polyimide resin include the well-known wet etching method and dry etching method. In the wet etching method, a photoresist is coated on a polyimide resin layer, dried, and then treated with light using a predetermined photomask to create an image and then dried to obtain a predetermined pattern. Thereafter, a predetermined portion of the polyimide 1 tumor is selectively removed by etching, and the unnecessary photoresist is removed to form a processed image on the polyimide dome.
また、ドライエツチング法としては、再加工する対象物
が有機層であるので、酸素プラズマによるドライエツチ
ング法または11!業プラズマによる反応性イオンエツ
チング法が好適な方法として用いられるが、これらに限
定されない。ドライエツチングで用いるドライエツチン
グ耐性展としては、酸素プラズマ耐性腺が望ましい。好
適な例としては、有機ケイ素系フォトレジスト、金属、
酸化ケイ素、窒化ケイ素、スピンオンカラス等か挙げら
れるが、これらに限定されない。In addition, as the dry etching method, since the object to be reprocessed is an organic layer, the dry etching method using oxygen plasma or 11! Reactive ion etching using industrial plasma is a preferred method, but is not limited thereto. Oxygen plasma resistant glands are desirable as dry etching resistant materials used in dry etching. Suitable examples include organosilicon photoresists, metals,
Examples include, but are not limited to, silicon oxide, silicon nitride, and spin-on glass.
酸素プラズマ耐性族のFjr望のパターンを形成する方
法としては、有機ケイ素系フォトレジストの場合には、
スピンコード塗布法で膜形成した後、通常のフォトリン
グラフイーによってパターン形成する方法かある。また
、金属、臥1Gケイ素、窒化ケイ素の場合には、蒸溜、
スパッタリング法で、さらに、スピンオンガラスの場合
には、スピンコード塗布法で、俗剤易浴耐熱性有機展上
に溶層な形成する。これら博族上に、フォトリングラフ
イーによってパターンを形成した恢、パターンをマスク
としてドライエツチングまたはワエットエッチングを行
うことにより、W=プラズマ耐性腺のパターンを得るこ
とかできる。In the case of an organosilicon photoresist, the method for forming an oxygen plasma resistant pattern is as follows:
There is a method in which a film is formed using a spin code coating method and then a pattern is formed using normal photophosphorography. In addition, in the case of metals, 1G silicon, and silicon nitride, distillation,
A molten layer is formed on a heat-resistant organic material that is easy to bathe using a sputtering method or, in the case of spin-on glass, a spin cord coating method. By forming a pattern on these structures by photolithography and performing dry etching or wet etching using the pattern as a mask, a pattern of W=plasma resistant gland can be obtained.
本発明で用いる感光性ポリイミド@腫の例としては、特
開昭57−168942考、特開昭57−170929
号、特開昭54−145794号公報に示される材料が
挙げられる。もつとも、本発明において用いる材料は、
加熱硬化して厳終的に一般式〔I〕の繰り返し単位を主
成分とするポリイミド樹脂に転化するもので、無′酸解
めっぎ液耐性、耐熱性、絶縁族特性、レジスト特性を兼
ね備える材料であれは良く、上記した各公報に示される
材料に限定されない。Examples of the photosensitive polyimide used in the present invention include JP-A-57-168942 and JP-A-57-170929.
Examples include materials shown in Japanese Patent Application Laid-Open No. 54-145794. However, the materials used in the present invention are
It is heat-cured and ultimately converted into a polyimide resin whose main component is the repeating unit of the general formula [I], and it has acid-free plating solution resistance, heat resistance, insulating group properties, and resist properties. Any material may be used, and the material is not limited to the materials shown in the above-mentioned publications.
本発明で用いる感光性ポリイミド側脂の碑〃o工は、以
下の方法で行われる。すなわち、先ず、感光性ポリアミ
ド酸C感元性ポリイミド前駆体)ワニスを基板上に塗布
、乾燥して前駆体樹脂層を形成する。次いで、所定のフ
ォトマスクを用いて路光し、現像して前駆体樹脂層の=
足の部分な選択的に除去して前駆体樹脂層に加工碑か形
成される。The engraving of the photosensitive polyimide side fat used in the present invention is carried out by the following method. That is, first, a photosensitive polyamic acid C (element-sensitive polyimide precursor) varnish is applied onto a substrate and dried to form a precursor resin layer. Next, the precursor resin layer is exposed using a predetermined photomask and developed.
By selectively removing parts of the legs, a processed monument is formed on the precursor resin layer.
この恢、加熱硬化してポリイミド彌艙に転化して、感光
性ポリイミド樹脂絶縁膜に加工両が形成される。In this case, it is heated and cured and converted into a polyimide layer, thereby forming a processed layer on the photosensitive polyimide resin insulating film.
本発明に用いられる感光性ポリイミド樹脂前駆体は、通
常のフォトリソグラフィーBl術でパターン加工か可能
である。基板への゛塗布にを工、回転塗布、撹屓、噴き
、印刷などの+段から適宜選択できる。The photosensitive polyimide resin precursor used in the present invention can be patterned by ordinary photolithography technique. Application to the substrate can be appropriately selected from among + steps such as machining, spin coating, stirring, spraying, and printing.
乾5Nは、室温以上120℃以下の範囲から辿はれる温
良で行われる。室−より低いと、浴媒の蒸発に時間がか
かり実用的でない。120℃より尚いと、光架橋剤や厖
感剤の熱分解か起り、光反応に寄与しな(なる。また、
減圧乾燥を竹うと良い結果が得られることが多い。Dry 5N is carried out at a temperature ranging from room temperature to 120°C. If the temperature is lower than room temperature, it will take a long time to evaporate the bath medium, making it impractical. If the temperature is higher than 120°C, thermal decomposition of the photocrosslinking agent and sensitizing agent will occur, and they will not contribute to the photoreaction.
Vacuum drying often yields good results.
路光は悪常紫外縁か用いられるが、司伏光氷、遠紮外株
、電子綜、X栂、イオンビームであってもよい。The path light is usually an ultraviolet beam, but it may also be a beam beam, an electric beam, an X-ray beam, or an ion beam.
現像液としては、N−メチル−2−ピロリドン、N、N
−ジメチルホルムアミド、lV、IV−ジメチルアセト
アミド、ジメチルスルホキシド、ヘキサメチルホスホリ
ックトリアミド、lV−アセチル−ε−カプロラクタム
、1.3−ジメチル−2−イミダゾリジノンなどの丼プ
ロトン性極性浴媒を単独あるいはメタノール、エタノー
ル、イソプロビルアルコール、ベンゼン、トルエン、キ
シレン、メチルセルソルブなどの不すアミド敵の非¥@
媒との混合液として用いることかできる。As a developer, N-methyl-2-pyrrolidone, N,N
- Dimethylformamide, lV, IV-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphoric triamide, lV-acetyl-epsilon-caprolactam, 1,3-dimethyl-2-imidazolidinone, etc. alone. Or non-containing amino acids such as methanol, ethanol, isopropyl alcohol, benzene, toluene, xylene, and methylcellosolve.
It can also be used as a mixture with a medium.
現像により形成したパターンは、リンス液によって洗浄
し、現像浴媒を除去する。リンス液には、現像徹と現本
口性のよいポリアミド酸の非浴媒を用いるが、メタノー
ル、エタノール、イソブΩビルアルコール、ベンゼン、
トルエン、キシレン、メチルセミツル1などか好適な例
として李げられる。The pattern formed by development is washed with a rinse solution to remove the developing bath medium. For the rinsing liquid, a non-bath medium of polyamic acid with good developer and developer properties is used, but methanol, ethanol, isobuvinyl alcohol, benzene,
Suitable examples include toluene, xylene, and methyl semivine.
上iCの処理によって優られたポリアミド敵組成物は、
加熱処理することによって、イミド県JP地の填状基を
持つ耐熱性ポリマのパターンとなる。The polyamide composition improved by the above iC treatment is
By heat treatment, it becomes a heat-resistant polymer pattern with filler groups of Imido-ken JP ground.
加熱温度は、120℃以上5圓℃以下の1141から遇
はれる。120℃より低いと、閉場反応が起らないか、
あるいは、極端に遅くなり実用的でない。The heating temperature ranges from 1141 to 120°C or higher and 5°C or lower. If it is lower than 120℃, closed field reactions may not occur.
Or it becomes extremely slow and impractical.
500℃より尚くなると、ポリマの熱分解か起り、好ま
しくない。If the temperature exceeds 500°C, thermal decomposition of the polymer may occur, which is not preferable.
ポリイミドおよび感光性ポリイミドの加熱処理は室索な
どの不粘性ガス蓚囲気下または真全下で行うのか望まし
い。また、不活性ガス亦囲気下では、水素などの還元ガ
スを若干混合するととも好抜しい。It is preferable that the heat treatment of polyimide and photosensitive polyimide be carried out under an atmosphere surrounded by an inviscid gas such as a room cable or under the entire atmosphere. In addition, under an inert gas atmosphere, it is preferable to mix a small amount of reducing gas such as hydrogen.
本発明で用いる無電解めっき液としては、種々のものを
用いることができるが、例えは、%囲昭59−1163
66号公報に示される化学鋼めっき液が李げられる。も
つとも、無電解めっき液であれは良く、これに限定され
ない。Various electroless plating solutions can be used as the electroless plating solution used in the present invention.
A chemical steel plating solution shown in Publication No. 66 is used. However, any electroless plating solution may be used, and the present invention is not limited to this.
上記公報に6已載されるめっき欣は、鋼(II)イオン
、鋼(n)イオンの旙化剤、銅(II)イオンの還元剤
、アルカリ金属の水酸化物、アミン糸のエトキシ介th
]活性剤、α、α′−ジピリジルもしくはO−7エナン
トロリンもしくはそれらの諸導体を富んでなる化学組め
っき液において、lVB族元素の無機化合物を含んでな
ることを%黴とするものである。The six plating substances listed in the above publication include steel (II) ions, steel (n) ion oxidizing agents, copper (II) ion reducing agents, alkali metal hydroxides, and ethoxy-mediated amine threads.
] A chemically assembled plating solution enriched with an activator, α, α'-dipyridyl or O-7 enanthroline, or their various conductors, which contains an inorganic compound of group IVB elements. .
本発明は、上述した一般式〔I〕の採りもし単位を主成
分とするポリイミド偏組により杷鰍腺を形成しているた
め、無電解銅めっきを付なう際、アルカリ性のめっき液
に対し大きな耐性を示し、俗解されない。そのため、ポ
リイミド杷−族の俗解による族べり、パターンだれの発
生か防止される。また、めっき液についても、但SJ]
旨の溶解による液組成父化を生じない。In the present invention, since loquat glands are formed by biased polyimide mainly composed of units of general formula [I] described above, when applying electroless copper plating, it is difficult to resist alkaline plating solution. It shows great resistance and is not easily misunderstood. Therefore, the occurrence of family conflicts and pattern variations due to the common understanding of the polyimide loquat family can be prevented. Regarding the plating solution, however, SJ]
The liquid composition does not change due to dissolution of the liquid.
その結果、ポリイミド絶縁膜か厚い膜厚で、しかも、パ
ターンだれを生じることなく、無電解めっきか進行する
ので、アスペクト比か尚く、膜厚の厚い配線層を形成す
ることができる。As a result, the polyimide insulating film is thick, and since electroless plating is performed without pattern distortion, it is possible to form a wiring layer with a high aspect ratio and a large thickness.
また、めっき液のmriy、変化が少ないので、めっき
金属層の成長速度か一定となって、生産性か良好である
。Furthermore, since there is little change in the mriy of the plating solution, the growth rate of the plating metal layer remains constant, resulting in good productivity.
従って、本発明によって得られる配yw羞板は、IC等
の電子回路素子を実装して、ハイブリッドICを構成す
るのに好適である。特に、多層配線基板とした場合には
、Ga梢缶、尚密度化に対応できて、LSI等を実装す
ることに好適である。Therefore, the yw shield plate obtained by the present invention is suitable for mounting electronic circuit elements such as ICs to form a hybrid IC. In particular, when used as a multilayer wiring board, it is suitable for mounting LSIs and the like, as it can cope with increased density of Ga-topped cans.
以下、本発明の央ゐ例について図面を参照して説明する
。Hereinafter, a central example of the present invention will be explained with reference to the drawings.
不発明が通用される実施例の配線基板としては、第1図
〜m4図に示すものが¥けられる。もっとも、本発明の
配線基板はそれらに限られるもので&工ない。Examples of wiring boards for which the invention is applicable include those shown in FIGS. 1 to 4. However, the wiring board of the present invention is not limited to these.
振1図(!!)に示す配線基板は、基板上I K、めっ
き成長用導体パターンを構成する銅薄層2を設けると共
に、眼銅薄膜2上で一口する加工害5を有する絶縁膜を
構成するポリイミド両刀百膜3を設け、かつ、該蒋5内
に導体配線を構成する鋼めつき層6を設けてなる配線パ
ターンを有して構成される。The wiring board shown in Fig. 1 (!!) is provided with a thin copper layer 2 constituting a conductor pattern for IK and plating growth on the board, and an insulating film having a processing damage 5 on the copper thin film 2. It has a wiring pattern in which a polyimide double layer 3 is provided, and a steel plating layer 6 is provided inside the wire 5 to form a conductor wiring.
第2図ψ)に示す配解基板は、めっき成長用導体パター
ンを、クロム博膜7−1、銅薄膜2およびクロム溶層7
−2を用いて形成し、鋼めっきに際して、紋上層のクロ
ム博膜7−2の加工溝5内に蕗出している部分を除去し
て用いることを除き、他の構成は、上ロロ第1図け)の
ものと同じである。The disposed substrate shown in FIG.
-2, and when steel plating is used, the part protruding into the processed groove 5 of the chrome film 7-2 on the top layer is removed. It is the same as the one shown in Figure).
第6図1e1に示す配愈基板は、感光性ポリイミド前駆
体を用いてポリイミド切刀ば膜を形成することを除き、
上記第1図け)に示すものと同じである。The flexible substrate shown in FIG. 6 1e1 has the following features, except that the polyimide cutter film is formed using a photosensitive polyimide precursor.
This is the same as shown in Figure 1 above.
第4図Fg+に示す配線基板は、上1c第2囚け1に示
す配fIM基板上に、ポリイミド側り百課5および鋼め
っき層6とを検層して多層化した多層部+1&’!+=
板である。The wiring board shown in FIG. 4 Fg+ is a multilayer part +1&'! which is obtained by logging and layering a polyimide side layer 5 and a steel plating layer 6 on the fIM board shown in the upper part 1c second case 1. +=
It is a board.
次に、本発明の配線基板およびその製造方法に関する実
施例について詳細に説明する。Next, embodiments of the wiring board and the manufacturing method thereof of the present invention will be described in detail.
先ず、笑施に先立ち、あらかじめ下記の如くして、第1
表に示すポリアミド酸ワニス、および、ポリイミド前躯
体ワニスを得た。First, prior to the service, the first
A polyamic acid varnish and a polyimide precursor varnish shown in the table were obtained.
室紮気流下に、4,4′−ジアミノジフェニルエーテル
100.9 (’0.5モル)をN−メチル−2−ピロ
リドン15B+39に溶解して、ジアミン浴液を一合し
た5、次に、この浴液な水冷によって+F115℃の温
度に保ちながら、攪拌下に5 、5’、 4 、4’−
ジフェニルテトラカルボン酸二無水物147 g (0
,5モル)を〃口えた。加え終えてからさらに約15℃
で5時間反応させて、次いで、5戸孔のフィルタを用い
て加圧濾過し、粘度50ポアズ(30℃)の第1表A1
のポリアミドIll (A )の浴液を得た。100.9 ('0.5 mol) of 4,4'-diaminodiphenyl ether was dissolved in 15B+39 of N-methyl-2-pyrrolidone under a room air stream, and the diamine bath solution was combined. 5,5',4,4'-
Diphenyltetracarboxylic dianhydride 147 g (0
, 5 moles). Approximately 15℃ more after adding
The mixture was reacted for 5 hours at
A bath solution of polyamide Ill (A) was obtained.
呈索気流下にパラフェニレンジアミン5Q (0,5モ
ル)をN、N−ジメチルアセトアミド1159yに溶解
して、ジアミン浴液を調製した。次に、この溶液を氷冷
によって約15℃の温度に保ちながら、撹拌下に3.5
’、4.4’−ジフェニルテトラカルボン酸二無水物i
47 !l(0,5モル)をガロえた。加え終てからさ
らに約15℃で5時間反応させて、次いで、5μm孔の
フィルタケ用いてガロ圧蓚遇し、粘度55ポアズ(25
℃)の第1表A2のポリアミド岐CB)の溶液を優だ。A diamine bath solution was prepared by dissolving paraphenylene diamine 5Q (0.5 mol) in N,N-dimethylacetamide 1159y under a flowing air stream. Next, this solution was heated for 3.5 min while stirring while keeping the temperature at about 15°C by ice-cooling.
',4.4'-diphenyltetracarboxylic dianhydride i
47! 1 (0.5 mol) was removed. After the addition was completed, the reaction was further carried out at about 15°C for 5 hours, and then subjected to Gallo pressure using a filter with 5 μm holes to reduce the viscosity to 55 poise (25
A solution of the polyamide branched CB) of Table 1 A2 at 0°C) was prepared.
ポリアミ
含有量35
ザル)−4
(0,(J54ミ
ミノ)ブa
ド酸(,4)の浴数20!(ポリアミ ド敵)に、2,
6−ビス(パラアジドベン
ヒドロキシシクロへキサノン0.02yリモル)、5−
CM、7v−ジメチルアビルメタクリレート2.5.9
(0,0146モル)、グリセリンO4l!1を浴解し
、次いで、1μm孔のフィルタを用いて加圧証遇して、
第1表腐3の感光性ポリイミド前駆体ワニスを得た。Polyamide content 35 colander) -4 (0, (J54 Mimino) a bath number of acid (,4) 20! (Polyamide enemy), 2,
6-bis(paraazidobenhydroxycyclohexanone 0.02y mol), 5-
CM, 7v-dimethylabil methacrylate 2.5.9
(0,0146 mol), glycerin O4l! 1 was dissolved in a bath, and then subjected to pressure using a filter with 1 μm pores,
A photosensitive polyimide precursor varnish of No. 1 Table 3 was obtained.
ポリアミド酸(B)の浴液20y (ポリアミド酸含有
:に5.U 51C,2、6−ビス(パラアジドベンザ
ル)−4−ヒドロキシシクロへキサノン0.28y l
0.75 ミリモル)、5−CN、N−ジメチルア
ミノ)プロピルメタクリレ−) 2.5 !/(0,0
146モル)、トリエチレングリコール0.71 km
解し、次いで、1μm孔のフィルタを用いて7IQ圧總
矯して、脇1表A4の感光性ポリイミド剖駆坏ワニスを
得た。20 y of polyamic acid (B) bath solution (contains polyamic acid: 5.U 51C,2,6-bis(paraazidobenzal)-4-hydroxycyclohexanone 0.28 y l
0.75 mmol), 5-CN, N-dimethylamino)propyl methacrylate) 2.5! /(0,0
146 mol), triethylene glycol 0.71 km
Then, the mixture was subjected to 7IQ pressure using a filter with 1 μm pores to obtain a photosensitive polyimide varnish of Table 1 A4.
室木気流丁に、4 、4’−ジアミノジフェニルエーテ
ル100 g (0,5モル)をN−メチル−2−ピロ
リドンとN、7v−ジメチルアセトアミドの混合液11
8.9に陪解し℃、ジアミン俗欣を脚台した。100 g (0.5 mol) of 4,4'-diaminodiphenyl ether was added to a mixture of N-methyl-2-pyrrolidone and N,7v-dimethylacetamide in a Muroki Kiryucho.
When it dissolved at 8.9℃, the diamine was released.
次に、この溶液を、水冷によって$)15℃の温良に保
ちなから、攪拌下に5.5’、4.4’−ジフェニルテ
トラカルボン酸二無水物147タ(0,5七ル)を加え
た。刀Uえ終え℃からさら−に約15°Cで5時間反応
させて、粘度50ポアズ(60℃)のポリアミド酸(C
)の溶液を慢だ。Next, while keeping this solution at a good temperature of 15°C by cooling with water, 147 t (0.57 l) of 5.5',4.4'-diphenyltetracarboxylic dianhydride was added while stirring. added. Polyamic acid (C
) solution is arrogant.
・・・ (C)
上記ポリアミド[((、’ )の浴1205(ポリアミ
ド欧含M重5.0 g )に対し、2,6−ビス(パラ
アジドベンザル)−4−カルポキシシクaへキサノン0
.14y (0,55ミリモル)、3−(N、N−ジメ
チルアミノ)プロピルメタクリレート2.11(0,0
12モル)、トリエチレングリコール0.75!/を浴
解し、次いで、1μm孔のフィルタを用いてガロ圧謙過
して、巣1表/I65の感光性ポリイミド前駆体浴液を
優だ。... (C) 2,6-bis(paraazidobenzal)-4-carpoxycycloa hexanone 0
.. 14y (0,55 mmol), 3-(N,N-dimethylamino)propyl methacrylate 2.11 (0,0
12 moles), triethylene glycol 0.75! / was dissolved in the bath, and then filtered under Gallo pressure using a filter with 1 μm pores to remove the photosensitive polyimide precursor bath solution of 1/I65.
A6−5で用いたポリアミド[(C’ )の浴液209
(ホリアミド酸含有菫3.0 g )に対し、2,6−
ビス(パラアジドベンサル)−4−ヒドロキンシクロヘ
キサノン0.IQ (0,35ミリモル)、6−cn、
N−ジメチルアミノ)プロピルメタクリレ−) 2.1
1 (o、o12モル)を溶解し、次いで、1μm孔の
フィルタを用いて加圧諏過して、第1表/166の感光
性ポリイミド前駆体浴欲を得た。Polyamide [(C') bath solution 209 used in A6-5
(3.0 g of violet containing holamidic acid), 2,6-
Bis(paraazidobenthal)-4-hydroquinecyclohexanone 0. IQ (0,35 mmol), 6-cn,
N-dimethylamino)propyl methacrylate) 2.1
1 (o, o12 mol) was dissolved and then filtered under pressure using a filter with 1 μm pores to obtain a photosensitive polyimide precursor solution as shown in Table 1/166.
なお、本実施例において鋼めっき層6を形成することに
用いることができる無′wi解銅めつき液の組成を第2
表に示す。In this example, the composition of the copper-free copper plating solution that can be used to form the steel plating layer 6 is as follows.
Shown in the table.
(以下余白) 実施例1 第1図を用いて実施例1を説明する。(Margin below) Example 1 Example 1 will be explained using FIG. 1.
アルミナ基板1上に15μm幅のめっき成長用パターン
の鋼博族2を形成した(第11α)。次に、基板1上に
A61のポリアミド([(A )のワニスをスピン菫布
した。この金板を窒素ガス雰囲気下で200℃で60分
間、次いで、350℃で50 分間加熱硬化して、厚
さ10μmの式1に示す繰り返し羊位の構造を有するポ
リイミド腺6ン形成した(第1図b)。On the alumina substrate 1, a plating growth pattern of 15 μm width was formed on the steel plate 2 (11th α). Next, a varnish of A61 polyamide ([(A)) was spun onto the substrate 1. This gold plate was cured by heating at 200°C for 60 minutes in a nitrogen gas atmosphere, then at 350°C for 50 minutes. Six polyimide glands with a thickness of 10 μm and having the repeating structure shown in Formula 1 were formed (FIG. 1b).
・・・c式■)
次に1ポリイミド族上にフォトレジストとして東京応化
工業製0NIJR−2(lをスピン迩布して、100℃
で30分間乾燥して、厚さ1.8μmの7オトレジスト
膜4を形成した俊(第1囚C)、周知のフォトリングラ
フイー技術によって101IyIL幅の抜きパターン形
成し、150℃で60分間カロ熱した(第1図d)。次
いで、基板をポリイミドエツチング液【40℃)に浸漬
して、露出したポリイミド族を選択的にエツチングして
、フォトレジスト族4のパターンをポリイミドM3に転
写して、加工嚢5を形成し、銅薄膜2のめつき成長用パ
ターン形成出させたに第1図e)。・・・C formula ■) Next, 0NIJR-2 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-spun as a photoresist on the polyimide group 1 and heated at 100°C.
Shun (1st Prisoner C) formed a 7-photoresist film 4 with a thickness of 1.8 μm by drying it for 30 minutes, then formed a punched pattern with a width of 101 IyIL using the well-known photolithography technique, and dried it at 150° C. for 60 minutes. It was heated (Fig. 1d). Next, the substrate is immersed in a polyimide etching solution (40°C) to selectively etch the exposed polyimide group, and the pattern of the photoresist group 4 is transferred to the polyimide M3 to form a processing bag 5, and the copper The pattern for plating growth of the thin film 2 was formed (Fig. 1e).
この恢、不要となったフォトレジスト族4を剥離しくm
1図f)、基板を、第2表の11の無電解鋼めっき液に
浸漬してポリイミドの加工り内部に鋼めっきNll6を
形成光測し、厚さ10μm%編10μmの、アスペクト
比が筒く、厚い銅配緑鳩を形成することかできた(第1
図5)。このとき、上記ポリイミドm脂は、無電解めっ
き液に対して耐性が優れており、族べりはなかった。In this case, remove the photoresist group 4 that is no longer needed.
Figure 1 f), the substrate was immersed in the electroless steel plating solution No. 11 in Table 2 to form a steel plating Nll6 inside the processed polyimide. It was possible to form a thick copper dome (first stage).
Figure 5). At this time, the polyimide resin had excellent resistance to the electroless plating solution, and there was no fading.
実施例2
実施?!l 2について第2図を用いて祝B)3″′f
る。Example 2 Implementation? ! Congratulations on l 2 using Figure 2 B) 3″′f
Ru.
アルミナ基板1上に、15μm幅のクロム薄課7−1、
銅薄膜2、りΩム薄展7−2の6鳩からなるめっき成長
用導体パターンを形成した(第2図α)。次に、基板1
上に/I62のポリアミドばCB)のワニスをスピン塗
布し、この基板を真空中で200℃で60分間、次いで
、650℃で60 分間加熱硬化して、厚さ20μm
の式■に示す繰り返し単位の構造を有するポリイミド膜
3を形成した(第2図b)。On the alumina substrate 1, a chromium thin section 7-1 with a width of 15 μm,
A conductive pattern for plating growth consisting of 6 layers of copper thin film 2 and rim thin film 7-2 was formed (FIG. 2 α). Next, board 1
A varnish of /I62 polyamide (CB) was spin-coated on top, and the substrate was heat-cured in vacuum at 200°C for 60 minutes and then at 650°C for 60 minutes to give a thickness of 20 μm.
A polyimide film 3 having a repeating unit structure shown by the formula (2) was formed (FIG. 2b).
て厚さ11LrILの有機ケイ素糸フォトマスト良4を
形成した(第2図C)。An organosilicon thread photomast layer 4 having a thickness of 11 LrIL was formed (FIG. 2C).
・・・(式■)
続いて、弐■に示す繰り返し単位の構造を有するポリ(
1,1−ジメチル−2−p−とドロキシフェニルシルメ
チレン)70ム重都、式■に示す感光剤60蔦虚部を1
150g菫都の2m;トキシエタノールに浴かし、+i
機ケイ素ホボジ型フォトレジストリ惑うし液を調製した
。この感元赦を基板上にスピン塗布した恢、75℃で6
0−分間グリベークし次いで、フォトリソグラフィー技
術によって10IJIIL幅の抜きパターンを有機ケイ
素糸フォトレジスト腺4に形成した(第2図d)。...(Formula ■) Next, poly(
1,1-dimethyl-2-p- and droxyphenylsilmethylene) 70 μm
150g Sumito 2m; soaked in toxyethanol, +i
A cleaning solution for silicon-based photoresistry was prepared. After spin-coating this coating on a substrate, it was heated to 75°C.
After baking for 0 minutes, a punch pattern with a width of 10 IJIIL was formed on the organosilicon thread photoresist gland 4 by photolithography technique (FIG. 2d).
上記の基板を散索プラズマな用いた反応性イオンエツチ
ング((7,RIE)処理することにより、ポリイミド
膜3の露出部を選択的に除云し、テーバのない、はぼ垂
直の断面を待つ加工再5を形成した。(第2図e)。By subjecting the above substrate to a reactive ion etching ((7, RIE) treatment using a scattering plasma, the exposed portion of the polyimide film 3 is selectively removed, resulting in a nearly vertical cross section with no taper. A reprocessed portion 5 was formed (Fig. 2e).
次に1不要となった刹−域ケイ素糸フォトレジスト族を
除云し、次いで、加工溝内に露出しているクロム薄膜7
−2をフェリシアン化カリ/水酸化カリ溶液で選択的に
エツチングして銅薄膜2を露出した(第2図j)。Next, remove the unnecessary silicon thread photoresist group 1, and then remove the chromium thin film 7 exposed in the processed groove.
-2 was selectively etched with a potassium ferricyanide/potassium hydroxide solution to expose the copper thin film 2 (FIG. 2j).
この後、基板を第2辰腐2の無電所銅めっぎ液に浸漬し
て、加工溝内部に銅めっき鳩6を形成充填し、めっき層
の厚みをポリイミド族の厚みと同一とすることによって
、厚さ20μm、偏10μmの為アスペクト比の配線を
形成した(第2図り。このとき、ポリイミド族は、めっ
き液に対して優れた耐性を示し、パターンタ“しは起こ
らなかった。After this, the substrate is immersed in a second varnish 2 electroless copper plating solution to form and fill copper plating doves 6 inside the processed groove, so that the thickness of the plating layer is the same as the thickness of the polyimide group. A wiring with a thickness of 20 μm and an aspect ratio of 10 μm was formed (see Figure 2). At this time, the polyimide group showed excellent resistance to the plating solution and no patterning occurred.
実施例6 実施例5について第5図を用いて説明する。Example 6 Example 5 will be explained using FIG. 5.
アルミナ基板1上に25μm幅の鋼薄膜2からなるめっ
き成長用導体パターンを形成した(第5図α)。次に、
第1辰腐5の感光性ポリイミド前駆体ワニスを基板上に
スピン塗布して、85℃で60分間乾燥して厚さ20屡
の感光性ポリイミドfaJ駆体層8を形成した(第6図
b〕。次いで、所定のフォトマスクを介して5ooWI
iil、圧水飯灯で100秒間紫外線照射した。A conductor pattern for plating growth consisting of a 25 μm wide steel thin film 2 was formed on an alumina substrate 1 (FIG. 5 α). next,
The photosensitive polyimide precursor varnish of the first varnish 5 was spin-coated onto the substrate and dried at 85° C. for 60 minutes to form a 20-layer thick photosensitive polyimide faJ precursor layer 8 (Figure 6b). ]. Next, 5ooWI was applied through a predetermined photomask.
iii. Ultraviolet rays were irradiated for 100 seconds using a pressure water lamp.
膳元恢、N−メチル−2−ピロリドン4谷、エタノール
1容から成る混液で現像し、次いで、エタノールでリン
スして、下部鋼薄膜2を露出させる所定の加工#iI5
を形成した(第6図C)。次いで、室累雰囲気下120
℃で60分間、200℃で50分間、400℃で60分
間の顔に加熱硬化して、膜厚10μmの式Iの繰り返し
単位構造を有するポリイミドのレリーフパターンを得た
。この時、フォトマスクのパターンは忠実に転写され、
20μm幅の加工纒5が形成された(第3図d)。Predetermined processing #iI5 in which the lower steel thin film 2 is exposed by developing with a mixed solution consisting of 4 volumes of N-methyl-2-pyrrolidone and 1 volume of ethanol, and then rinsing with ethanol.
was formed (Fig. 6C). Next, under a room atmosphere 120
C. for 60 minutes, 200.degree. C. for 50 minutes, and 400.degree. C. for 60 minutes to obtain a polyimide relief pattern having a repeating unit structure of formula I having a film thickness of 10 .mu.m. At this time, the photomask pattern is faithfully transferred,
A processed thread 5 with a width of 20 μm was formed (FIG. 3d).
しかる後に、基板を、第2表A5の無電解鋼めっき液に
浸漬して、加工溝5内部に銅めっき鳩6を形成充填して
、厚さ10μm1幅20μmの配#M7m’に形成した
(第3p g )。このとき、上記ポリイミド膜は、無
電解めりぎ液に対して梗れた耐性を示し、膜べりやパタ
ーンダレは見られなかった。Thereafter, the substrate was immersed in the electroless steel plating solution shown in Table 2 A5, and copper plating doves 6 were formed and filled inside the processed groove 5 to form a pattern M7m' with a thickness of 10 μm and a width of 20 μm ( 3rd pg). At this time, the polyimide film showed excellent resistance to the electroless cutting solution, and no film peeling or pattern sag was observed.
実施例4〜6
第1表の/164〜46の感光性ポリイミドnu駆体ワ
ニスを用いて、実施例6と同僚にして銅配k パターン
を形成した。第1表A4の感光性ボリイミド前駆体を用
いた場合、加熱硬化して、最終的に式■に示す繰り返し
単位kmを有するポリイミド膜か優られた。また、表1
表腐5.6の感光性ポリイミド前駆体からは、式Iに示
す繰り返し単位構造を有するポリイミドが得られた。い
ずれの場合も、ポリイミド族は、優れた無電解めっき液
耐性を示し、めっき液浸漬中において展べり、パターン
ダレか見られなかった。Examples 4 to 6 Using photosensitive polyimide nu precursor varnishes of /164 to 46 in Table 1, copper patterns were formed in the same manner as in Example 6. When the photosensitive polyimide precursor shown in Table 1 A4 was used, it was cured by heating and a polyimide film having the repeating unit km shown in the formula (2) was finally obtained. Also, Table 1
A polyimide having a repeating unit structure shown in Formula I was obtained from a photosensitive polyimide precursor having a surface rot of 5.6. In either case, the polyimide group showed excellent resistance to electroless plating solution, spread during immersion in the plating solution, and no pattern sagging was observed.
なお、実施例4〜6については、第2表A4の無電解め
っき液を用いた。In addition, for Examples 4 to 6, the electroless plating solution shown in Table 2 A4 was used.
実施例7 実施例7について、第4区を用いて説明する。Example 7 Example 7 will be explained using the fourth section.
本実施例は、前記実施例1および2に示したポリイミド
樹Bぽおよび記載パターン形成工程を繰り返すことによ
り多層部11ii1基板を裏道した。この場合もポリイ
ミド膜は、無電解めっきg役漬中に換べり、パターンダ
レは見られず、潰れた無電解めっき液耐性を示した。In this example, the multilayer part 11ii1 substrate was formed by repeating the polyimide tree B po and the described pattern forming process shown in Examples 1 and 2 above. In this case as well, the polyimide film was replaced during the electroless plating process, and no pattern sag was observed and it showed resistance to the electroless plating solution.
なお、本実施例では、第2衣ム5の無電解めっきgを用
いた。In this example, electroless plating g of the second coating 5 was used.
比較例
後述する式■の繰り返し単位構造を有するポリイミド両
側を用いて、実施例1で示した方法により鋼部縁層形成
を試みたが、無電解めっき液浸漬中にポリイミド膜が浴
け、族べりやパターンダレが起こりアスペクト比の尚(
、厚い配線層は形成でき7エかった。Comparative Example An attempt was made to form an edge layer on a steel part by the method shown in Example 1 using both sides of polyimide having a repeating unit structure of the formula (2) described later. Edges and pattern sag may occur and the aspect ratio may be incorrect (
However, a thick wiring layer could be formed in 7 days.
なお、本比戦例では、第2衣ム1の無電解めっき液を用
いた。In addition, in this comparative example, the electroless plating solution of the second coating 1 was used.
次に、上記各実施例において用いられているポリイミド
側廁換の無電解鋼めっき液に対する耐性に胸する実証例
について、帛5図を参照して説明するO
第5図は、ポリイミド側脂換を無電解鋼めっき液に浸漬
したときの族厚敷少を浸漬時間に対してプロットしたも
のる示す。ここで、用いた勲’msめっき液は、第2表
A1のものである。Next, a demonstration example of the resistance of the polyimide side refill used in each of the above examples to the electroless steel plating solution will be explained with reference to Figure 5. The graph shows the thickness and thickness of the steel plated when it is immersed in an electroless steel plating solution, plotted against the immersion time. The Isao'ms plating solution used here is that shown in Table 2 A1.
ポリイミド樹脂層α、bに用いたポリイミドによびその
&展条件を工、以下の造りである。The structure of the polyimide used for the polyimide resin layers α and b and its expansion conditions are as follows.
α:ボリアミド*(、()のワニスをシリコンウェハ上
にスピン塗布し、窒素雰囲気中において、200℃で6
0分間、650℃で60分間の加熱硬化により式Iの繰
り返し単位構造を有する10声厚のポリイミド膜を形成
した。α: Boryamide *(, () varnish was spin-coated onto a silicon wafer, and varnish was applied at 200°C in a nitrogen atmosphere.
A polyimide film having a repeating unit structure of formula I and having a thickness of 10 tones was formed by heat curing at 650° C. for 60 minutes.
b:式■の繰り返し単位構造を有するポリイミド前駆体
16重重部、A’、N−ジメチルアセトアミド421重
部、N−メチル−2−ピロリドン42重量部とからなる
ポリアミド前駆体ワニスをシリコンウェハ上にスピン塗
布し、家業雰囲気中において、200℃で60分間、さ
らに550℃で60分間加熱硬化して式■の繰り返し単
位構造を有する浮さ10μmのポリイミド族を形成した
。b: A polyamide precursor varnish consisting of 16 parts by weight of a polyimide precursor having a repeating unit structure of formula (2), 421 parts by weight of A', N-dimethylacetamide, and 42 parts by weight of N-methyl-2-pyrrolidone is placed on a silicon wafer. It was spin-coated and cured by heating at 200° C. for 60 minutes and then at 550° C. for 60 minutes in a family atmosphere to form a polyimide group having a repeating unit structure of formula (2) and having a float of 10 μm.
(以下余日)
本発明に係る繰り返し単位を主成分とするポリイミド樹
脂αは、第5図より明らかなように、無電解鋼めっき液
に没亥しても、膜厚減少は生じない。しかし、本発明外
の倒IM Aは、膜厚が時間の経るごとに薄くなる。(Details below) As is clear from FIG. 5, the polyimide resin α having repeating units as a main component according to the present invention does not reduce its film thickness even when immersed in an electroless steel plating solution. However, the film thickness of the inverted IM A other than the present invention becomes thinner as time passes.
以上運べたように、本発明による配線パターンの形成方
法によれは、無電解めっき液浸漬中において、ポリイミ
ド絶tR腺の俗解による族べり、パターンダレかなく、
アスペクト比が筒く、淳い配線層を形成することができ
る。さらに、絶縁層の俗解が無いので、無電解めっき液
の組成を変えることかない。そこで、めつき蛍属鳩の成
灸速曳か一定であり主属性も艮い。As described above, the method for forming a wiring pattern according to the present invention prevents sagging and pattern sag during immersion in an electroless plating solution due to the common understanding of polyimide tR glands.
It is possible to form a thick wiring layer with a narrow aspect ratio. Furthermore, since there is no common understanding of the insulating layer, there is no need to change the composition of the electroless plating solution. Therefore, the success rate of the firefly pigeon is constant, and its main attribute is also unclear.
第1図〜第4図は、各々本発明による配稼基板の実施例
における形成工程を示jwr面図、第5図は本発明およ
び本発明外のポリイミド5f脂の無電解めっき8L授漬
中における膜厚減少と皮償時間との間係を示すグラフで
ある。
1・・・基板 2・・・鋼薄膜6・・・
ポリイミド樹月旨 4・・・レジスト膜5・・・加工
s 6・・・銅めっき層7−1 、7−
2・・・クロム薄膜
8・・・感光性ポリイミド割部体層
9・・・クロム薄膜
寸n−寸0−
NK’)
蟇
才反
鞘′5図
?
(d)
目中千・
1 基才反
? 釣薄状
5 力a1溝
5 ポソイミFノjす刀U
トトFig. 1 to Fig. 4 are respectively JWR side views showing the formation process in an embodiment of the distribution board according to the present invention, and Fig. 5 is a diagram showing the process of electroless plating of polyimide 5F resin according to the present invention and outside the present invention during 8L immersion. 2 is a graph showing the relationship between film thickness reduction and skin recovery time in FIG. 1...Substrate 2...Steel thin film 6...
Polyimide tree effect 4... Resist film 5... Processing 6... Copper plating layer 7-1, 7-
2...Chromium thin film 8...Photosensitive polyimide split body layer 9...Chromium thin film dimension n-dimension 0-NK') Anteropod'5 figure? (d) Mechusen・1 Basic talent rebellion? Fishing Thin 5 Force A1 Groove 5 Posoimi F Nojsu Sword U Toto
Claims (1)
に、該パターン上で開口する溝を有する絶縁膜を設け、
かつ、該溝内に導体配線を設けてなる配線パターンを有
する配線基板において、上記絶縁膜を、下記一般式〔I
〕の繰り返し単位を主成分とするポリイミド樹脂にて形
成することを特徴とする配線基板。 ▲数式、化学式、表等があります▼ ・・・〔I〕 但し、一般式〔I〕においてRは二価の芳香族有機基を
表わす。 2.導体配線と絶縁膜とからなる配線パターン層を複数
層積層して多層配線基板とした請求項1記載の配線基板
。 5.回路素子を実装してハイブリッドICを構成するこ
とに用いる請求項1または2記載の配線基板。 4.基板上に、めっき成長用導体パターンを形成し、さ
らに、該導体パターンを含めて上記基板上に絶縁膜を形
成し、この絶縁膜に、上記導体パターン上で開口する溝
を加工形成し、ついで、該溝内に無電解めっき法によっ
て導体を形成充填して導体配線を形成する配線基板形成
方法において、 下記一般式〔I〕の繰り返し単位を主成分とするポリイ
ミド樹脂により上記絶縁膜を形成すること特徴とする配
線基板形成方法。 ▲数式、化学式、表等があります▼ ・・・〔I〕 但し、一般式〔I〕においてRは二価の芳香族有機基を
表わす。 5.上記絶縁膜に、加熱硬化よって一般式〔I〕の繰り
返し単位を主成分とするポリイミド樹脂に転化される感
光性ポリイミド樹脂を用いる請求項4記載の配線基板形
成方法。 6.導体配線層と絶縁膜とからなる配線パターン層を複
数層積層して多層配線基板とする請求項4または5記載
の配線基板形成方法。[Claims] 1. A conductor pattern for plating growth is provided on the substrate, and an insulating film having a groove opening on the pattern is provided,
In addition, in a wiring board having a wiring pattern in which a conductor wiring is provided in the groove, the insulating film is formed by the following general formula [I
] A wiring board characterized by being formed from a polyimide resin whose main component is a repeating unit. ▲There are mathematical formulas, chemical formulas, tables, etc.▼ ...[I] However, in the general formula [I], R represents a divalent aromatic organic group. 2. 2. The wiring board according to claim 1, wherein a plurality of wiring pattern layers each comprising a conductor wiring and an insulating film are laminated to form a multilayer wiring board. 5. The wiring board according to claim 1 or 2, which is used to configure a hybrid IC by mounting circuit elements. 4. A conductive pattern for plating growth is formed on a substrate, an insulating film is formed on the substrate including the conductive pattern, a groove is formed in this insulating film to open on the conductive pattern, and then , in a wiring board forming method in which a conductor is formed and filled in the groove by electroless plating to form a conductor wiring, the insulating film is formed from a polyimide resin whose main component is a repeating unit of the following general formula [I]. A wiring board forming method characterized by: ▲There are mathematical formulas, chemical formulas, tables, etc.▼ ...[I] However, in the general formula [I], R represents a divalent aromatic organic group. 5. 5. The wiring board forming method according to claim 4, wherein the insulating film is made of a photosensitive polyimide resin which is converted by heat curing into a polyimide resin containing repeating units of general formula [I] as a main component. 6. 6. The wiring board forming method according to claim 4, wherein a plurality of wiring pattern layers each comprising a conductor wiring layer and an insulating film are laminated to form a multilayer wiring board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22233188A JPH0272692A (en) | 1988-09-07 | 1988-09-07 | Wiring board and forming method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22233188A JPH0272692A (en) | 1988-09-07 | 1988-09-07 | Wiring board and forming method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0272692A true JPH0272692A (en) | 1990-03-12 |
Family
ID=16780674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22233188A Pending JPH0272692A (en) | 1988-09-07 | 1988-09-07 | Wiring board and forming method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0272692A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1065313A (en) * | 1996-08-13 | 1998-03-06 | Shinwa:Kk | Printed wiring board |
JP2014072198A (en) * | 2012-09-27 | 2014-04-21 | Seiren Co Ltd | Method for manufacturing polyimide resin base material with metal pattern formed thereon |
JP2021061270A (en) * | 2019-10-03 | 2021-04-15 | 大日本印刷株式会社 | Wiring board and semiconductor device |
-
1988
- 1988-09-07 JP JP22233188A patent/JPH0272692A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1065313A (en) * | 1996-08-13 | 1998-03-06 | Shinwa:Kk | Printed wiring board |
JP2014072198A (en) * | 2012-09-27 | 2014-04-21 | Seiren Co Ltd | Method for manufacturing polyimide resin base material with metal pattern formed thereon |
JP2021061270A (en) * | 2019-10-03 | 2021-04-15 | 大日本印刷株式会社 | Wiring board and semiconductor device |
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