JPH0253400B2 - - Google Patents
Info
- Publication number
- JPH0253400B2 JPH0253400B2 JP57002304A JP230482A JPH0253400B2 JP H0253400 B2 JPH0253400 B2 JP H0253400B2 JP 57002304 A JP57002304 A JP 57002304A JP 230482 A JP230482 A JP 230482A JP H0253400 B2 JPH0253400 B2 JP H0253400B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- carbon
- mixture
- sio
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002994 raw material Substances 0.000 claims description 66
- 239000000203 mixture Substances 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 26
- 239000002245 particle Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000006229 carbon black Substances 0.000 description 5
- 239000008187 granular material Substances 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Description
【発明の詳細な説明】
本発明はβ−炭化珪素ウイスカーを効率良く製
造する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for efficiently producing β-silicon carbide whiskers.
従来β−炭化珪素ウイスカーの製造方法として
珪酸物質と炭素質物質とをモル比で0.8〜2.6程度
になるよう混合し、これを団塊状に成形し、非酸
化性雰囲気で灼熱して製造する方法が行われてい
る。この場合生成するSiCウイスカーは混合原料
の団塊物の表面や団塊物の間に生成するが、その
収率が悪いので、ウイスカーの製造方法としては
経済的でない。 A conventional method for producing β-silicon carbide whiskers is to mix a silicic acid material and a carbonaceous material at a molar ratio of about 0.8 to 2.6, form the mixture into a nodule shape, and scorch it in a non-oxidizing atmosphere. is being carried out. In this case, SiC whiskers are generated on the surface or between the nodules of the mixed raw materials, but the yield is low, so this is not an economical method for producing whiskers.
本発明者等はこの欠点を克服し、ウイスカーを
経済的に製造する方法について種々研究したとこ
ろ、微粉の珪酸物質と炭素または含炭素物質とを
特定割合に混合した混合物Ａと微粉の炭素または
含炭素物質を、原料混合物Ａ中のSiO2に対し特
定割合になるようにした原料Ｂとを作り、これら
両者を近接して配置し、両者を1300〜1600℃に加
熱すると原料混合物Ａ内での反応により生成する
SiOは原料混合物Ａよりガス化揮散して原料Ｂ中
の炭素と反応し針状のウイスカーが原料Ｂ内に収
率良く生成することを知見した。 The present inventors overcame this drawback and conducted various research on methods for producing whiskers economically, and found that a mixture A, which is a mixture of a finely divided silicic acid substance and carbon or a carbon-containing substance in a specific ratio, and a finely divided carbon or carbon-containing substance are mixed together. When a raw material B and a carbon material are made in a specific proportion to the SiO 2 in the raw material mixture A, and both are placed close to each other and heated to 1300 to 1600°C, the amount of carbon in the raw material mixture A is produced by reaction
It has been found that SiO is gasified and volatilized from raw material mixture A, reacts with carbon in raw material B, and acicular whiskers are generated in raw material B with good yield.
β−炭化珪素ウイスカーの生成機構の詳細は未
だ完全に解明されていないが、本発明において
は、原料混合物Ａにおいて
SiO2＋Ｃ→SiO＋CO (1)
の反応によりSiOが生成する。このSiOガスは混
合物Ａに近接して配置した原料Ｂに達し、原料Ｂ
において、
SiO＋2C→SiC＋CO (2)
の反応によりSiCが生成し、次第にウイスカーに
成長するものと考えられる。 Although the details of the production mechanism of β-silicon carbide whiskers have not yet been completely elucidated, in the present invention, SiO is produced in raw material mixture A by the reaction of SiO 2 +C→SiO+CO (1). This SiO gas reaches the raw material B placed close to the mixture A, and the raw material B
It is thought that SiC is generated by the reaction of SiO+2C→SiC+CO (2) and gradually grows into whiskers.
本発明はこの知見に基づくものであつて、
SiO2：Ｃのモル比が１：１〜１：２になるよう
に微粉の珪酸物質と炭素または含炭素物質とを混
合した原料混合物Ａと微粉の炭素または含炭素物
質よりなる原料Ｂとを、原料混合物Ａ中のSiO2
モル数：原料Ｂ中のＣモル数の比が１：２〜１：
10になるように両原料を近接して配置し、両者を
1300〜1600℃の温度範囲で非酸化性雰囲気中にお
いて加熱し、原料Ｂ内に炭化珪素ウイスカーを生
成させることを特徴とするβ−炭化珪素ウイスカ
ーの製造方法である。 The present invention is based on this knowledge, and
Raw material mixture A is a mixture of a finely divided silicic acid substance and carbon or a carbon-containing substance such that the molar ratio of SiO 2 :C is 1:1 to 1:2, and a raw material B is a mixture of a finely divided silicic acid substance and carbon or a carbon-containing substance. , SiO 2 in raw material mixture A
Number of moles: The ratio of the number of moles of C in raw material B is 1:2 to 1:
Arrange both raw materials close to each other so that the ratio is 10, and
This is a method for producing β-silicon carbide whiskers, which is characterized by generating silicon carbide whiskers in raw material B by heating in a non-oxidizing atmosphere in a temperature range of 1300 to 1600°C.
本発明において珪酸物質はアモルフアス質珪酸
でも結晶質珪酸でも使用されるが何れの場合でも
良質のものが好ましく、粒度は10μ以下程度のも
のが望ましい。また含炭素物質としては樹脂、樹
脂炭化物、セルローズなどの含炭素物質が使用さ
れる。これらの含炭素物質は非酸化性雰囲気にお
ける1300℃以上の加熱により何れも炭化されるの
で、この場合における炭素モル数は加熱後得られ
た炭化物のモル数より計算する。 In the present invention, the silicic acid substance used may be either amorphous silicic acid or crystalline silicic acid, but in either case, it is preferably of good quality, and the particle size is preferably about 10 μm or less. Further, as the carbon-containing substance, carbon-containing substances such as resin, resin carbide, cellulose, etc. are used. Since all of these carbon-containing substances are carbonized by heating at 1300° C. or higher in a non-oxidizing atmosphere, the number of moles of carbon in this case is calculated from the number of moles of carbide obtained after heating.
本発明において原料混合物Ａ中のSiO2とＣと
の混合割合は、SiO2：Ｃのモル比が１未満のと
きは未反応のSiO2が残り、モル比が２を越える
とSiOの生成よりもSiC粉末の生成が顕著になる
ので、１：１〜１：２とするのが好ましい。 In the present invention, the mixing ratio of SiO 2 and C in the raw material mixture A is such that when the molar ratio of SiO 2 :C is less than 1, unreacted SiO 2 remains, and when the molar ratio exceeds 2, SiO is more likely to be formed. The ratio is preferably 1:1 to 1:2 since the formation of SiC powder becomes noticeable.
本発明において原料混合物Ａおよび原料Ｂは粉
末状態においても、また種々の形状に成形したも
のでも差支えない。次に原料混合物Ａと原料Ｂと
を近接して配置するとは例えば後述の実施例１お
よび２に示すように成形した原料混合物Ａと成形
した原料Ｂとを混合する場合または実施例３で示
すように原料混合物Ａに近接して原料Ｂを層状に
交互に配置する場合、さらにまた原料混合物Ａと
原料Ｂとを数cm程度離して配置しても良いという
意味である。要するに、SiO2とＣとの混合物か
ら成る部分と、Ｃから成る部分が必ず存在する必
要がある。 In the present invention, raw material mixture A and raw material B may be in a powder state or molded into various shapes. Next, placing raw material mixture A and raw material B close to each other means, for example, when mixing molded raw material mixture A and molded raw material B as shown in Examples 1 and 2 below, or as shown in Example 3. This means that when the raw material B is arranged alternately in layers in the vicinity of the raw material mixture A, the raw material mixture A and the raw material B may also be arranged with a distance of about several centimeters. In short, there must be a portion made of a mixture of SiO 2 and C and a portion made of C.
このように原料をＡとＢとを２つに分けた理由
は、SiC＋SiO2→2SiO＋ＣなるSiCの分解反応を
防ぎ、SiCの生成効率を高めるためである。 The reason why the raw materials are divided into two, A and B, is to prevent the SiC decomposition reaction of SiC+SiO 2 →2SiO+C and to increase the production efficiency of SiC.
原料混合物Ａと原料Ｂとの割合は、原料混合物
Ａから生成するSiOの捕集を効果的にするため、
原料混合物Ａ中のSiO2のモル数と原料Ｂ中のＣ
のモル数との比が１：２〜１：10になるように配
置することが好ましい。何故なら、原料混合物Ａ
中のSiO2のモル数に対する原料Ｂ中のＣのモル
比が２未満になると原料混合物Ａから生成する
SiOが原料ＢのＣに対して過剰になるため、SiO
の捕集効果が低下する。またこのモル比が10を越
えると残留するＣが多くなる割りには捕集効果が
上がらないため、経済的でない。 The ratio of raw material mixture A and raw material B is set so that SiO generated from raw material mixture A can be effectively collected.
Number of moles of SiO 2 in raw material mixture A and C in raw material B
The arrangement is preferably such that the ratio to the number of moles of is 1:2 to 1:10. This is because raw material mixture A
It is produced from raw material mixture A when the molar ratio of C in raw material B to the number of moles of SiO 2 in it is less than 2.
Since SiO is in excess of C in raw material B, SiO
The collection effect of Moreover, if this molar ratio exceeds 10, the trapping effect will not increase even though the amount of residual C increases, which is not economical.
本発明において加熱は急激に行つてもまた緩か
に行つてもよいが、加熱温度は1300〜1600℃程度
で、加熱時間は例えば加熱温度が1500℃のとき数
10分程度で充分である。また加熱は炭素物質の酸
化を防止するためアルゴン、水素などのような非
酸化性雰囲気で行う。 In the present invention, the heating may be performed rapidly or slowly, but the heating temperature is approximately 1300 to 1600°C, and the heating time is, for example, several times when the heating temperature is 1500°C.
About 10 minutes is enough. Further, heating is performed in a non-oxidizing atmosphere such as argon or hydrogen to prevent oxidation of the carbon material.
本発明によれば反応終了後は原料混合物Ａ中に
はSiCはほとんど生成されず、原料Ｂ中にのみβ
−SiCウイスカーが生成される。本発明により得
られるβ−SiCウイスカーは炭素物質と共存した
状態で得られ、また不純物を含有しているのが普
通であるので得られたβ−SiCウイスカーを空気
中で加熱して炭素物質を除去した後、更に酸処理
すればより高純度のものを得ることができる。 According to the present invention, after the completion of the reaction, almost no SiC is produced in the raw material mixture A, and only in the raw material B
-SiC whiskers are generated. The β-SiC whiskers obtained by the present invention are obtained in the coexistence of carbon substances, and usually contain impurities, so the β-SiC whiskers obtained by the present invention are heated in air to remove carbon substances. After removal, a product of higher purity can be obtained by further acid treatment.
本発明によれば簡単な操作で純度99％以上のβ
−SiCウイスカーを50％以上の収率で得ることが
できる。 According to the present invention, β with a purity of 99% or more can be obtained with simple operations.
-SiC whiskers can be obtained with a yield of 50% or more.
実施例 １
アミルフアスシリカ（純度99％）とカーボンブ
ラツク粉末（純度99％、粒度10μ以下）をポツト
ミル中でモル比１：１の割合に、30分間混合した
ものを粒径３mm程度に造粒し、原料混合物Ａを造
つた。これとは別にカーボンブラツクを造粒し粒
径３mm程度の原料Ｂを造つた。Example 1 Amylfous silica (purity 99%) and carbon black powder (purity 99%, particle size 10μ or less) were mixed in a pot mill at a molar ratio of 1:1 for 30 minutes to produce particles with a particle size of approximately 3 mm. The mixture was granulated to produce raw material mixture A. Separately, carbon black was granulated to produce raw material B having a particle size of about 3 mm.
このようにして得た造粒物を第１図に示すよう
に、反応容器に原料混合物A1.5に対し原料B1の
重量比で装入し、アルゴン雰囲気下で1500℃で１
時間加熱したところ原料Ｂ中のみにβ−SiCウイ
スカーが生成した。得られたβ−SiCウイスカー
を空気中で700℃で30分間加熱して炭素を消失せ
しめた後、塩酸処理したところ、純度99％以上の
β−SiCウイスカーを65％の収率で得た。 As shown in Figure 1, the granules thus obtained were charged into a reaction vessel at a weight ratio of 1.5 to 1.5 of the raw material mixture A and 1 of the raw material B, and heated at 1,500°C under an argon atmosphere.
When heated for a period of time, β-SiC whiskers were generated only in raw material B. The resulting β-SiC whiskers were heated in air at 700°C for 30 minutes to eliminate carbon, and then treated with hydrochloric acid, yielding β-SiC whiskers with a purity of 99% or higher at a yield of 65%.
比較例
上記実施例１で造つた原料混合物Ａ造粒物と原
料造粒物とを重量比で1.5：１に混合したものを
ポツトミルで１時間粉砕し、SiOとＣとの均一混
合物からなる粉体を得た。この粉体をアルゴン雰
囲気下で1500℃で１時間加熱処理して得た反応生
成物を空気中で600℃、30分間加熱後、塩酸処理
して得たものはβ−SiCウイスカーを約10％含ん
だ主にβ−SiC微粉からなるもので、SiC全体と
しての収率は52％、ウイスカーのみの収率は約５
％であつた。Comparative Example A mixture of the raw material mixture A granules produced in Example 1 and the raw material granules at a weight ratio of 1.5:1 was pulverized in a pot mill for 1 hour to form a powder consisting of a homogeneous mixture of SiO and C. I got a body. The reaction product obtained by heating this powder at 1500℃ for 1 hour in an argon atmosphere was heated at 600℃ in air for 30 minutes, and then treated with hydrochloric acid, which contained approximately 10% β-SiC whiskers. It mainly consists of β-SiC fine powder, and the overall yield of SiC is 52%, and the yield of whiskers alone is about 5.
It was %.
実施例 ２
アモルフアスシリカ（純度99％）とカーボンブ
ラツク粉末（純度99％、粒度10μ以下）ポツトミ
ル中でモル比１：1.2の割合に１時間混合したも
のを粒径５mm程度に造粒し、原料混合物Ａを造つ
た。またこれとは別にカーボンブラツクを造粒
し、粒径５mm程度の原料Ｂを造つた。Example 2 Amorphous silica (purity 99%) and carbon black powder (purity 99%, particle size 10μ or less) were mixed in a pot mill at a molar ratio of 1:1.2 for 1 hour and granulated to a particle size of approximately 5 mm. Raw material mixture A was made. Separately, carbon black was granulated to produce raw material B having a particle size of approximately 5 mm.
このようにして造つた造粒物を原料混合物Ａ中
のSiO2のモル比と原料Ｂ中のＣのモル数とが
１：４になるように実施例１と同様に反応容器に
装入し、水素雰囲気下で1480℃で100分間加熱し
たところ、原料Ｂ中のみにβ−SiCウイスカーが
生成した。得られたβ−SiCウイスカーを空気中
で750℃で40分間加熱して炭素を消失せしめた後、
塩酸処理したところ、純度98％以上のβ−SiCウ
イスカーを68％の収率で得た。 The granules thus produced were charged into a reaction vessel in the same manner as in Example 1, such that the molar ratio of SiO 2 in raw material mixture A and the number of moles of C in raw material B were 1:4. When heated at 1480° C. for 100 minutes in a hydrogen atmosphere, β-SiC whiskers were generated only in raw material B. After heating the obtained β-SiC whiskers in air at 750°C for 40 minutes to eliminate carbon,
When treated with hydrochloric acid, β-SiC whiskers with a purity of 98% or higher were obtained in a yield of 68%.
実施例 ３
アモルフアスシリカ（純度99％）とカーボンブ
ラツク粉末（純度98.5％、粒度10μ以下）をモル
比で１：１の割合に配合し、ポツトミルで30分間
混合して原料混合物Ａの粉末を造つた。これとは
別に無定形炭素（純度98.5％）の粉末（粒度10μ
以下）の原料Ｂを造つた。Example 3 Amorphous silica (purity 99%) and carbon black powder (purity 98.5%, particle size 10μ or less) were blended in a molar ratio of 1:1 and mixed in a pot mill for 30 minutes to obtain raw material mixture A powder. I built it. Apart from this, amorphous carbon (purity 98.5%) powder (particle size 10 μ
Raw material B (below) was prepared.
このようにして造つた原料混合物Ａと原料Ｂと
を原料混合物Ａ中のSiO2モル数と原料Ｂ中のＣ
のモル数の比が１：５になるように実施例１と同
じ反応容器中に第２図に示す如く層状に交互に配
置し、アルゴン雰囲気下で1550℃で40分間加熱し
たところ、原料Ｂ中のみにβ−SiCウイスカーが
生成した。得られたβ−SiCウイスカーを空気中
で800℃で１時間加熱して炭素を消失せしめたと
ころβ−SiCウイスカーの収率は61％で純度は98
％であつた。次にこのSiCウイスカーを弗酸処理
したところ純度99.5％のβ−SiCウイスカーが得
られた。 The raw material mixture A and raw material B produced in this way are calculated based on the number of moles of SiO2 in raw material mixture A and C in raw material B.
As shown in Figure 2, they were arranged alternately in layers in the same reaction vessel as in Example 1 so that the molar ratio of B was 1:5, and heated at 1550°C for 40 minutes in an argon atmosphere. β-SiC whiskers were generated only in the inside. When the obtained β-SiC whiskers were heated in air at 800°C for 1 hour to eliminate carbon, the yield of β-SiC whiskers was 61% and the purity was 98%.
It was %. Next, when this SiC whisker was treated with hydrofluoric acid, β-SiC whisker with a purity of 99.5% was obtained.
第１図は実施例１および２における反応容器の
原料混合物Ａと原料Ｂの装入状態を示す模式断面
図であり、第２図は実施例３における反応容器の
原料混合物Ａと原料Ｂの装入状態を示す模式断面
図である。
図において、１……原料混合物Ａ、２……原料
Ｂである。
FIG. 1 is a schematic cross-sectional view showing the charging state of raw material mixture A and raw material B in the reaction vessels in Examples 1 and 2, and FIG. FIG. 3 is a schematic cross-sectional view showing a closed state. In the figure, 1... Raw material mixture A, 2... Raw material B.
Claims (1)
ように微粉の珪酸物質と炭素または含炭素物質と
を混合した原料混合物Ａと、微粉の炭素または含
炭素物質よりなる原料Ｂとを、原料混合物Ａ中の
SiO2モル数：原料Ｂ中のＣモル数の比が１：２
〜１：10になるように近接して配置し、両者を
1300〜1600℃の温度範囲で非酸化性雰囲気中にお
いて加熱し、原料Ｂ内に炭化珪素ウイスカーを生
成させることを特徴とするβ−炭化珪素ウイスカ
ーの製造方法。1 Raw material mixture A, which is a mixture of a finely divided silicic acid substance and carbon or a carbon-containing substance such that the molar ratio of SiO 2 :C is 1:1 to 1:2; and a raw material B, which is made of a finely divided carbon or carbon-containing substance. and in raw material mixture A.
The ratio of the number of moles of SiO2 : the number of moles of C in raw material B is 1:2
Place them close to each other so that the ratio is ~1:10, and
A method for producing β-silicon carbide whiskers, which comprises heating in a non-oxidizing atmosphere in a temperature range of 1300 to 1600°C to generate silicon carbide whiskers in raw material B.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57002304A JPS58120599A (en) | 1982-01-12 | 1982-01-12 | Production of beta-silicon carbide whisker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57002304A JPS58120599A (en) | 1982-01-12 | 1982-01-12 | Production of beta-silicon carbide whisker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58120599A JPS58120599A (en) | 1983-07-18 |
| JPH0253400B2 true JPH0253400B2 (en) | 1990-11-16 |
Family
ID=11525617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57002304A Granted JPS58120599A (en) | 1982-01-12 | 1982-01-12 | Production of beta-silicon carbide whisker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58120599A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62212300A (en) * | 1986-03-11 | 1987-09-18 | Shin Etsu Chem Co Ltd | Production of silicon carbide whisker |
| JPS63159299A (en) * | 1986-12-20 | 1988-07-02 | Kobe Steel Ltd | Production of silicon carbide whisker |
| JPS63156100A (en) * | 1986-12-17 | 1988-06-29 | Kobe Steel Ltd | Production of silicon carbide whisker |
| US4873070A (en) * | 1986-12-17 | 1989-10-10 | Kabushiki Kaisha Kobe Seiko Sho | Process for producing silicon carbide whiskers |
| JPS63156099A (en) * | 1986-12-17 | 1988-06-29 | Kobe Steel Ltd | Production of silicon carbide whisker |
| US5021230A (en) * | 1987-04-22 | 1991-06-04 | Krstic Vladimir D | Method of making silicon carbide |
| JPH01131100A (en) * | 1987-11-12 | 1989-05-23 | Toyota Motor Corp | Production of silicon carbide whisker |
| US5116679A (en) * | 1988-07-29 | 1992-05-26 | Alcan International Limited | Process for producing fibres composed of or coated with carbides or nitrides |
| KR20040034968A (en) * | 2002-10-17 | 2004-04-29 | 장영철 | Method for Manufacturing Silicon Carbide Whisker Using Disposed Silicon Slurgy |
| JP2016098162A (en) * | 2014-11-26 | 2016-05-30 | 太平洋セメント株式会社 | Production method of reclaimed silicon carbide powder, and production method of silicon carbide single crystal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932719A (en) * | 1972-07-27 | 1974-03-26 | ||
| JPS5016760A (en) * | 1973-06-14 | 1975-02-21 |
-
1982
- 1982-01-12 JP JP57002304A patent/JPS58120599A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932719A (en) * | 1972-07-27 | 1974-03-26 | ||
| JPS5016760A (en) * | 1973-06-14 | 1975-02-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58120599A (en) | 1983-07-18 |
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