JPH0245715B2 - - Google Patents
Info
- Publication number
- JPH0245715B2 JPH0245715B2 JP56119177A JP11917781A JPH0245715B2 JP H0245715 B2 JPH0245715 B2 JP H0245715B2 JP 56119177 A JP56119177 A JP 56119177A JP 11917781 A JP11917781 A JP 11917781A JP H0245715 B2 JPH0245715 B2 JP H0245715B2
- Authority
- JP
- Japan
- Prior art keywords
- pair
- parallel cathode
- cathode electrodes
- parallel
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Description
【発明の詳細な説明】
本発明は、金属、絶縁体さらにはシリコン等の
半導体で形成された基板上の薄膜をドライエツチ
ング、特にプラズマエツチングするための方法お
よびそのための装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for dry etching, particularly plasma etching, thin films on substrates made of metals, insulators, and even semiconductors such as silicon.
近年、半導体集積回路の高密度化につれてパタ
ーンサイズが小さくなり、基板上に形成された半
導体、金属、絶縁体等の薄膜をエツチングする場
合に、従来の化学薬品を用いたウエツトエツチン
グに代わつて、ドライエツチング法が主流となつ
てきた。ドライエツチング法には、高周波を用い
たリアクテイブエツチング法、有磁場マイクロ波
プラズマエツチング法、イオンエツチング法、高
周波プラズマエツチング法等がある。 In recent years, as the density of semiconductor integrated circuits has increased, pattern sizes have become smaller, and when etching thin films of semiconductors, metals, insulators, etc. formed on substrates, wet etching, which uses conventional chemicals, is being replaced. , the dry etching method has become mainstream. Dry etching methods include reactive etching using high frequency, magnetic field microwave plasma etching, ion etching, and high frequency plasma etching.
次に、これらのエツチング法の長所、短所につ
いて説明する。高周波を用いたプラズマエツチン
グ法の装置として種々の形式のものがあり、被エ
ツチング材料を多結晶Si、SiO2、Si3N4、PSGあ
るいはAl等多岐に亘る。しかし、プラズマ内の
反応に寄与する活性種（中性ラジカル）は、放電
が行われる真空域（〜1Torr）でランダム・モー
シヨンとなるため、一般的には等方性エツチング
となつて、いわゆるサイドエツチングが発生し、
微細パターンの加工精度は限界がある。 Next, the advantages and disadvantages of these etching methods will be explained. There are various types of apparatus for plasma etching using high frequency, and the materials to be etched are wide-ranging, such as polycrystalline Si, SiO 2 , Si 3 N 4 , PSG, and Al. However, active species (neutral radicals) that contribute to reactions within the plasma undergo random motion in the vacuum region (~1 Torr) where discharge occurs, so generally this results in isotropic etching, so-called side etching. Etching occurs,
There are limits to the processing accuracy of fine patterns.
有磁場マイクロ波プラズマエツチング法は、磁
場中での電子のサイクロトロン運動とマイクロ波
との共鳴現象を用い、低い放電ガス圧力でもプラ
ズマ密度を低下させることなく、しかもイオンエ
ネルギーが低い状態でエツチングできるようにし
たもので、垂直エツチングが可能となつたことが
発表されている。しかし、この方法に使用される
装置は、構成が複雑で高価である。 The magnetic field microwave plasma etching method uses the resonance phenomenon between the cyclotron motion of electrons in a magnetic field and microwaves, and enables etching without reducing plasma density even at low discharge gas pressure and with low ion energy. It has been announced that vertical etching is now possible. However, the equipment used in this method is complex and expensive.
イオンエツチング法は、アルゴンイオン等を加
速してその衝撃によつてスパツタリングさせて、
サイドエツチングの少ないエツチングを行う方法
で、材料によるエツチング速度の差、即ち選択比
が大きくない。また、エツチング速度が小さく、
イオン衝撃による素子の損傷も大きい。 The ion etching method accelerates argon ions and causes sputtering due to the impact.
This method performs etching with little side etching, and the difference in etching speed depending on the material, that is, the selection ratio, is not large. In addition, the etching speed is low,
Element damage due to ion bombardment is also significant.
高周波を用いたリアクテイブ・プラズマエツチ
ング法は、微小パターンの加工法として有力視さ
れているドライエツチング技術で、平行平板電極
を用い、それに高周波を印加して電極間にプラズ
マを誘起し、平行電極上に置いた試料を加工する
ものである。次に、このエツチング法を第１図に
基づいて説明する。 The reactive plasma etching method using high frequency is a dry etching technique that is considered to be a promising method for processing micropatterns. This is to process a sample placed at Next, this etching method will be explained based on FIG.
第１図は、平行平板形電極構造のドライエツチ
ング装置の概略図である。１は下部電極で、この
電極は水冷されている。３はこの電極上に置かれ
た試料である。４は13.56MHzの高周波電源で上
部電極２および下部電極１の間に印加され、電極
間にプラズマを誘起する。５はエツチングガスの
導入管で、６，７は排気管である。このドライエ
ツチング法は、従来のガスプラズマエツチングに
比べるとガス圧力が低く、いわゆるラジカルによ
る等方的エツチングに加え、イオン衝撃によるス
パツタエツチング的要素も加味されているため、
方向性エツチングが行われ得る。このため、超
LSIの高精度な微細加工の有力な手段として活発
な研究開発がなされている。しかしながら、陰極
近傍に形成されるイオンシース内で加速されるイ
オン衝撃による損傷を試料に与えること、しかも
このイオンエネルギーの大きさはなかなか同定し
難く、またその制御が難しい等の難点があり、特
にAlに対して充分なスループツトを得るために
はエツチングに用いる塩素系化合物ガスの流量を
大きくする必要があり、装置のメンテナンスが困
難である等の問題があつた。 FIG. 1 is a schematic diagram of a dry etching apparatus having a parallel plate electrode structure. 1 is a lower electrode, and this electrode is water-cooled. 3 is a sample placed on this electrode. 4 is a 13.56 MHz high frequency power source that is applied between the upper electrode 2 and the lower electrode 1 to induce plasma between the electrodes. 5 is an etching gas introduction pipe, and 6 and 7 are exhaust pipes. This dry etching method requires lower gas pressure than conventional gas plasma etching, and in addition to so-called isotropic etching using radicals, it also takes into account sputter etching elements using ion bombardment.
Directional etching may be performed. For this reason, super
Active research and development is being carried out as a powerful means for high-precision microfabrication of LSI. However, there are drawbacks such as damage to the sample due to ion bombardment accelerated within the ion sheath formed near the cathode, and the magnitude of this ion energy is difficult to identify and difficult to control. In order to obtain a sufficient throughput for Al, it is necessary to increase the flow rate of the chlorine-based compound gas used for etching, which poses problems such as difficulty in maintaining the equipment.
本発明は、上記の問題を解決するためになされ
たもので、減圧状態にした容器内に一対の平行陰
極電極および前記平行陰極電極面に対し垂直およ
び平行な電界成分を与える他の陽極電極を前記平
行陰極電極間に配し、前記一対の平行陰極電極と
前記陽極電極との間に電圧を与え、前記一対の平
行陰極電極に基板を載置し、原料ガスを供給しな
がら、前記一対の平行陰極面に垂直な磁場を加え
ながら前記一対の平行陰極電極と前記陽極電極と
の間に放電プラズマを誘起し、前記基板をエツチ
ングするプラズマエツチング方法とそのための装
置である。 The present invention has been made to solve the above problems, and includes a pair of parallel cathode electrodes and another anode electrode that provides electric field components perpendicular and parallel to the plane of the parallel cathode electrodes in a container under reduced pressure. A voltage is applied between the pair of parallel cathode electrodes and the anode electrode, a substrate is placed on the pair of parallel cathode electrodes, and while supplying raw material gas, A plasma etching method and apparatus for etching the substrate by inducing discharge plasma between the pair of parallel cathode electrodes and the anode electrode while applying a magnetic field perpendicular to the parallel cathode surfaces.
次に、本発明を実施例に基づいて説明する。第
２図は本発明の第１の実施例を示す図であつて、
図において、１０はステンレス容器、１１は前記
容器を真空排気するための排気孔で、拡散ポン
プ、油回転ポンプにつながつている。本排気シス
テムにより、前記容器内を予め10-6Torr程度ま
で排気する。１２は前記容器に基板もしくは基板
上の薄膜、例えば多結晶Siをエツチングするため
のガス導入管である。もちろん、ガス導入管と排
気孔の相対的位置は任意に変え得ることはいうま
でもない。１３および１４は平行陰極電極で、例
えばステンレス製の円板で平行に対向し、１４の
平行陰極電極は冷却可能になつている。１７は前
記平行陰極電極の一方である１４上に置かれた被
エツチング基板である。１５は陽極電極で、例え
ばステンレス製の中空円板で前記平行陰極電極間
に置かれている。１８は前記陽極電極を支えるた
めの絶縁材料で、例えば石英の円筒である。１６
は容器１０の外に置かれた電磁石である。なお、
平行陰極電極１３および１４の距離は、自由に調
整できるように構成されている。 Next, the present invention will be explained based on examples. FIG. 2 is a diagram showing a first embodiment of the present invention,
In the figure, 10 is a stainless steel container, and 11 is an exhaust hole for evacuating the container, which is connected to a diffusion pump and an oil rotary pump. This exhaust system evacuates the inside of the container to about 10 -6 Torr in advance. Reference numeral 12 denotes a gas introduction pipe for etching the substrate or a thin film on the substrate, such as polycrystalline Si, into the container. Of course, it goes without saying that the relative positions of the gas inlet pipe and the exhaust hole can be changed as desired. Reference numerals 13 and 14 denote parallel cathode electrodes, which are made of, for example, stainless steel disks and are opposed in parallel, and the 14 parallel cathode electrodes can be cooled. 17 is a substrate to be etched placed on 14 which is one of the parallel cathode electrodes. Reference numeral 15 denotes an anode electrode, which is a hollow circular plate made of stainless steel, for example, and is placed between the parallel cathode electrodes. Reference numeral 18 is an insulating material for supporting the anode electrode, and is, for example, a quartz cylinder. 16
is an electromagnet placed outside the container 10. In addition,
The distance between the parallel cathode electrodes 13 and 14 is configured to be freely adjustable.
次に、このように構成された装置を用いてプラ
ズマエツチングする場合の放電条件について説明
する。まず、真空容器１０内を拡散ポンプおよび
油回転ポンプを用いて10-6〜10-7Torr程度迄真
空排気する。しかる後、バルブの開きを調整しな
がら一定の流量のガスを導入して、真空度を所定
の値、例えば10-3Torrに調節する。しかる後、
前記陽極電極１５に正の電圧を与え、前記平行陰
極電極１３および１４を例えば同電位（例えば接
地電位）に保ち、外部磁場を印加することにより
電極間に閉じ込められたプラズマ１９を誘起する
ことができる。 Next, the discharge conditions for plasma etching using the apparatus configured as described above will be explained. First, the inside of the vacuum container 10 is evacuated to about 10 -6 to 10 -7 Torr using a diffusion pump and an oil rotary pump. Thereafter, a constant flow rate of gas is introduced while adjusting the opening of the valve, and the degree of vacuum is adjusted to a predetermined value, for example, 10 -3 Torr. After that,
Plasma 19 confined between the electrodes can be induced by applying a positive voltage to the anode electrode 15, keeping the parallel cathode electrodes 13 and 14 at the same potential (for example, ground potential), and applying an external magnetic field. can.
上述の装置における各構成要素の寸法を説明す
ると、前記平行陰極電極１３および１４は、直径
300mmで、その電極間距離は50〜100mmである。そ
して、本発明の実施例においては、所謂ペニング
放電の概念を基本として説明しているが、寸法的
には平行陰極間の間隔に比べて平行陰極電極の寸
法が大きくとられているという点で、従来のペニ
ング放電の構成や概念とは異なつている。このこ
とにより、プラズマポテンシヤルは陽極電位に比
べ、例えば10-2Torrのとき約半分程度に降下し
ていることが実験的に確認できた。また、このプ
ラズマポテンシヤルは真空度に大きく依存する。
一般的に、真空度が悪くなるとプラズマポテンシ
ヤルは陽極電位に近づく。即ち、真空度が悪くな
ると一対の平行陰極電極と陽極電極との間の放電
は通常のDC放電に近づく。 To explain the dimensions of each component in the above device, the parallel cathode electrodes 13 and 14 have a diameter of
300mm, and its interelectrode distance is 50-100mm. In the embodiments of the present invention, explanations are based on the concept of so-called Penning discharge, but in terms of dimensions, the dimensions of the parallel cathode electrodes are larger than the distance between the parallel cathode electrodes. , which is different from the conventional Penning discharge configuration and concept. As a result, it was experimentally confirmed that the plasma potential drops to about half of the anode potential at, for example, 10 -2 Torr. Moreover, this plasma potential largely depends on the degree of vacuum.
Generally, when the degree of vacuum deteriorates, the plasma potential approaches the anode potential. That is, as the degree of vacuum deteriorates, the discharge between the pair of parallel cathode electrodes and anode electrode approaches a normal DC discharge.
基板あるいは基板上の薄膜をエツチングする場
合、イオンのエネルギーあるいはラジカル量の制
御は、例えば第３図に示すように、基板を保持す
る側に抵抗をつなぐことによつて自由に変え得
る。例えば、第３図に示すように、基板２７を保
持する平行陰極電極２４に抵抗３１を接続するこ
とにより、プラズマポテンシヤルと基板２７間の
電位差を任意に変化し得る。その結果、イオンエ
ネルギーの制御ができる。また、平行陰極電極２
４の電位を接地電位に対し正にすることにより、
平行陰極電極２４へ加速され入射する電子数が増
大し、平行陰極電極２４へ電子が飛び込む迄にガ
ス分子との衝突によつて多数のイオンおよびラジ
カルを形成することになる。即ち、平行陰極電極
２４の電位を変えると、ラジカル量、イオン量お
よびイオンエネルギーを変え得ることになり、エ
ツチングに多様性を持たせ得る。なお、第３図に
おいて、２０は例えばステンレス製の真空容器、
２１は排気孔、２２はガス導入管、２３は一方の
平行陰極電極、２４は他方の平行陰極電極、２５
はリング状の陽極電極（もちろん、円筒状でもそ
の他の形状でもよい）、２８は前記陽極電極を支
えるための絶縁材料で、例えば石英の円筒であ
る。２６は外部電磁石で、この場合、平行陰極電
極面に垂直な場合が示されているが、真空容器内
に平行陰極電極面に垂直な磁界を発生する磁界発
生機構を配置することも可能である。２７はエツ
チングすべき基板、３１は抵抗である。基板側に
電位を与える例で、抵抗で接続されている場合が
示されている。２９は誘起プラズマ、３０は真空
排気系を示す。 When etching a substrate or a thin film on a substrate, the energy of ions or the amount of radicals can be controlled freely by connecting a resistor to the side that holds the substrate, as shown in FIG. 3, for example. For example, as shown in FIG. 3, by connecting a resistor 31 to the parallel cathode electrodes 24 holding the substrate 27, the potential difference between the plasma potential and the substrate 27 can be changed arbitrarily. As a result, ion energy can be controlled. In addition, parallel cathode electrode 2
By making the potential of 4 positive with respect to the ground potential,
The number of electrons accelerated and incident on the parallel cathode electrode 24 increases, and by the time the electrons jump into the parallel cathode electrode 24, many ions and radicals are formed by collisions with gas molecules. That is, by changing the potential of the parallel cathode electrode 24, the amount of radicals, the amount of ions, and the ion energy can be changed, thereby making it possible to provide diversity in etching. In addition, in FIG. 3, 20 is a vacuum container made of stainless steel, for example.
21 is an exhaust hole, 22 is a gas introduction pipe, 23 is one parallel cathode electrode, 24 is the other parallel cathode electrode, 25
28 is a ring-shaped anode electrode (of course, it may be cylindrical or other shape), and 28 is an insulating material for supporting the anode electrode, for example, a quartz cylinder. Reference numeral 26 denotes an external electromagnet, which is shown perpendicular to the parallel cathode electrode surfaces in this case, but it is also possible to arrange a magnetic field generating mechanism that generates a magnetic field perpendicular to the parallel cathode electrode surfaces in the vacuum container. . 27 is a substrate to be etched, and 31 is a resistor. This is an example of applying a potential to the substrate side, and shows a case where it is connected with a resistor. 29 is an induced plasma, and 30 is a vacuum evacuation system.
以上、説明したように、本発明においては、高
真空域で低ガス流量でプラズマ密度を上げてエツ
チングが可能である。また、上記のエツチング装
置を用いると、ドライエツチングに際して陽極、
陰極の電位を調節することによつてイオンのエネ
ルギー、イオン量、ラジカル量の異なる状態を任
意に作り得るため、従来全く実現できなかつた領
域におけるドライエツチングが可能となつた。こ
れは、例えば微細加工の要する半導体集積回路の
製造における薄膜の加工に大きな自由度を与える
ことになり、工業上極めて大きな価値を有するも
のである。 As described above, in the present invention, etching can be performed in a high vacuum region with a low gas flow rate and by increasing the plasma density. Furthermore, when the above etching device is used, the anode,
By adjusting the potential of the cathode, it is possible to arbitrarily create different states of ion energy, ion content, and radical content, making it possible to perform dry etching in areas that were previously unachievable. This provides a large degree of freedom in processing thin films, for example in the manufacture of semiconductor integrated circuits that require microfabrication, and has extremely great industrial value.
第１図は従来の平板電極ドライエツチング装置
の一例を示す断面図、第２図および第３図は本発
明のドライエツチング装置の実施例を示す断面図
である。
１０，２０……ステンレス容器、１１，２１…
…排気孔、１２，２２……ガス導入管、１３，１
４，２３，２４……平行陰極電極、１５，２５…
…陽極電極、１６，２６……電磁石、１７，２７
……基板、１８，２８……絶縁材料、１９，２９
……プラズマ、３０……真空排気系、３１……抵
抗。
FIG. 1 is a sectional view showing an example of a conventional flat plate electrode dry etching apparatus, and FIGS. 2 and 3 are sectional views showing an embodiment of the dry etching apparatus of the present invention. 10,20...Stainless steel container, 11,21...
...Exhaust hole, 12,22...Gas introduction pipe, 13,1
4, 23, 24...parallel cathode electrodes, 15, 25...
...Anode electrode, 16,26...Electromagnet, 17,27
... Substrate, 18, 28 ... Insulating material, 19, 29
...Plasma, 30...Vacuum exhaust system, 31...Resistance.
Claims (1)
および前記平行陰極電極面に対し垂直および平行
な電界成分を与える他の陽極電極を前記平行陰極
電極間に配し、前記一対の平行陰極電極と前記陽
極電極との間に電圧を与え、前記一対の平行陰極
電極に基板を載置し、原料ガスを供給しながら、
前記一対の平行陰極面に垂直な磁場を加えながら
前記一対の平行陰極電極と前記陽極電極との間に
放電プラズマを誘起し、前記基板をエツチングす
ることを特徴とするプラズマエツチング方法。 ２ 容器内の圧力を減圧状態にするための排気装
置と、前記容器中にガスを導入する装置と、前記
容器内に配設された複数の電極と、容器外或いは
内部に設置された磁界発生器とを備え、前記電極
間に印加した電圧による電界および前記磁界発生
器による磁界によつて生じた電極間プラズマを用
いてエツチングするプラズマエツチング装置にお
いて、複数の電極が一対の平行陰極電極および前
記一対の平行陰極電極間に配置され且つ平行陰極
電極面に垂直および平行な電界成分を与える他の
電極であり、さらに前記磁界発生器は前記一対の
平行陰極電極面に垂直な磁界を与えることを特徴
とするプラズマエツチング装置。 ３ 一対の平行陰極電極に同じ電位を与え、他の
電極に正電位を与えることを特徴とする特許請求
の範囲第２項記載のプラズマエツチング装置。 ４ 一対の平行陰極電極に電位差を与え、かつ他
の電極に正電位を与えることを特徴とする特許請
求の範囲第３項記載のプラズマエツチング装置。[Scope of Claims] 1 A pair of parallel cathode electrodes and another anode electrode that provide electric field components perpendicular and parallel to the planes of the parallel cathode electrodes are disposed between the parallel cathode electrodes in a container under reduced pressure, Applying a voltage between a pair of parallel cathode electrodes and the anode electrode, placing a substrate on the pair of parallel cathode electrodes, and supplying raw material gas,
A plasma etching method characterized in that the substrate is etched by inducing discharge plasma between the pair of parallel cathode electrodes and the anode electrode while applying a perpendicular magnetic field to the pair of parallel cathode surfaces. 2. An exhaust device for reducing the pressure inside the container, a device for introducing gas into the container, a plurality of electrodes arranged inside the container, and a magnetic field generator installed outside or inside the container. In the plasma etching apparatus, a plurality of electrodes are connected to a pair of parallel cathode electrodes and a pair of parallel cathode electrodes; Another electrode is disposed between the pair of parallel cathode electrodes and provides electric field components perpendicular and parallel to the parallel cathode electrode surfaces, and the magnetic field generator is configured to provide a magnetic field perpendicular to the pair of parallel cathode electrode surfaces. Characteristic plasma etching equipment. 3. The plasma etching apparatus according to claim 2, wherein the same potential is applied to the pair of parallel cathode electrodes, and a positive potential is applied to the other electrode. 4. The plasma etching apparatus according to claim 3, wherein a potential difference is applied to the pair of parallel cathode electrodes, and a positive potential is applied to the other electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11917781A JPS5822381A (en) | 1981-07-31 | 1981-07-31 | Method and apparatus for plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11917781A JPS5822381A (en) | 1981-07-31 | 1981-07-31 | Method and apparatus for plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5822381A JPS5822381A (en) | 1983-02-09 |
| JPH0245715B2 true JPH0245715B2 (en) | 1990-10-11 |
Family
ID=14754811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11917781A Granted JPS5822381A (en) | 1981-07-31 | 1981-07-31 | Method and apparatus for plasma etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5822381A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3500328A1 (en) | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | SPRAYING DEVICE |
| JPS63140089A (en) * | 1986-12-01 | 1988-06-11 | Anelva Corp | Method and device for etching aluminum alloy film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435172A (en) * | 1977-08-24 | 1979-03-15 | Anelva Corp | Chemical reactor using electric discharge |
-
1981
- 1981-07-31 JP JP11917781A patent/JPS5822381A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435172A (en) * | 1977-08-24 | 1979-03-15 | Anelva Corp | Chemical reactor using electric discharge |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5822381A (en) | 1983-02-09 |
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