JPH0228266B2 - - Google Patents
Info
- Publication number
- JPH0228266B2 JPH0228266B2 JP58041663A JP4166383A JPH0228266B2 JP H0228266 B2 JPH0228266 B2 JP H0228266B2 JP 58041663 A JP58041663 A JP 58041663A JP 4166383 A JP4166383 A JP 4166383A JP H0228266 B2 JPH0228266 B2 JP H0228266B2
- Authority
- JP
- Japan
- Prior art keywords
- input
- bonding electrode
- circuit
- section
- input protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 8
- 230000006378 damage Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4166383A JPS59167046A (ja) | 1983-03-14 | 1983-03-14 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4166383A JPS59167046A (ja) | 1983-03-14 | 1983-03-14 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59167046A JPS59167046A (ja) | 1984-09-20 |
JPH0228266B2 true JPH0228266B2 (de) | 1990-06-22 |
Family
ID=12614617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4166383A Granted JPS59167046A (ja) | 1983-03-14 | 1983-03-14 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59167046A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0475514U (de) * | 1990-11-15 | 1992-07-01 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61283155A (ja) * | 1985-06-07 | 1986-12-13 | Mitsubishi Electric Corp | 半導体装置の入力保護回路 |
JP2533855B2 (ja) * | 1986-06-11 | 1996-09-11 | 沖電気工業株式会社 | 半導体集積回路装置 |
JPH02186673A (ja) * | 1989-01-13 | 1990-07-20 | Nec Corp | 半導体装置 |
JPH0428261A (ja) * | 1990-05-23 | 1992-01-30 | Sharp Corp | 半導体集積回路の静電破壊保護素子 |
JPH0430570A (ja) * | 1990-05-28 | 1992-02-03 | Sanyo Electric Co Ltd | 半導体集積回路 |
JP2011119401A (ja) * | 2009-12-02 | 2011-06-16 | Renesas Electronics Corp | 半導体装置および電子機器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5040281A (de) * | 1973-08-15 | 1975-04-12 |
-
1983
- 1983-03-14 JP JP4166383A patent/JPS59167046A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5040281A (de) * | 1973-08-15 | 1975-04-12 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0475514U (de) * | 1990-11-15 | 1992-07-01 |
Also Published As
Publication number | Publication date |
---|---|
JPS59167046A (ja) | 1984-09-20 |
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