JPH02278823A - Cleaning and drying apparatus of substrate - Google Patents
Cleaning and drying apparatus of substrateInfo
- Publication number
- JPH02278823A JPH02278823A JP10056689A JP10056689A JPH02278823A JP H02278823 A JPH02278823 A JP H02278823A JP 10056689 A JP10056689 A JP 10056689A JP 10056689 A JP10056689 A JP 10056689A JP H02278823 A JPH02278823 A JP H02278823A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- substrate
- cleaning
- pure water
- cleaning tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 238000001035 drying Methods 0.000 title claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000007788 liquid Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010981 drying operation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハなどの基板を対象に、エツチン
グ処理後の洗浄、乾燥工程で用いる基板の洗浄・乾燥装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a substrate cleaning/drying apparatus used in a cleaning and drying process after an etching process for substrates such as semiconductor wafers.
この種の基板洗浄・乾燥装置として、温純水を満たした
洗浄槽に対し、ホルダ上に垂直姿勢に並べて担持した基
板をハンドリング機構の操作により上方から槽内に吊り
下ろして液中に浸漬し、この状態で洗浄を行った後に、
同じハンドリング機構の操作により基板を微速で液中よ
り引き上げて水切り乾燥するようにした方式のものが知
られている。This type of substrate cleaning/drying device uses a cleaning tank filled with warm pure water, in which the substrates supported in a vertical position on a holder are lowered into the tank from above by operating a handling mechanism and immersed in the liquid. After cleaning in condition,
A method is known in which the substrate is pulled out of the liquid at a very slow speed and drained and dried by operating the same handling mechanism.
この方式における乾燥工程は、いわゆる表面張力乾履方
式と呼ばれ、基板を液面から引き上げる際に基板と液面
との間に働く表面張力の作用によ・す、基板の表面に付
着残留しているパーティクルも液と一緒にそぎ落とされ
る。The drying process in this method is called the surface tension drying method, and is due to the action of surface tension that acts between the substrate and the liquid surface when the substrate is lifted from the liquid surface. Particles contained in the liquid are also scraped off along with the liquid.
ところで、前記した従来装置では、洗浄槽に対して基板
を昇降するハンドリング機構が必要であり、したがって
装置の機構が複雑でコスト高となる。また、処理能力の
面でも、表面張力乾燥を有効に働かせるためには基板に
揺れ、振動を与えずに静かに液中より引き上げる必要が
あり、このために基板を毎分３〇−程度の微速で引き上
げ操作する必要があり、高いスループット性が得られな
い、さらに機能面でも、ハンドリング機構が発塵源とな
って基板を洗浄槽から気中に引き上げた際に、−旦は清
浄化された基板の表面にハンドリング機構から発塵した
パーティクルが付着してしまうと言った不具合が生じる
。By the way, the conventional apparatus described above requires a handling mechanism for raising and lowering the substrate with respect to the cleaning tank, and therefore the mechanism of the apparatus is complicated and the cost is high. In addition, in terms of processing capacity, in order for surface tension drying to work effectively, it is necessary to gently lift the substrate out of the liquid without shaking or vibrating the substrate. In addition, the handling mechanism is a source of dust, and when the board is pulled up from the cleaning tank into the air, it is difficult to achieve high throughput. This causes problems such as particles generated from the handling mechanism adhering to the surface of the substrate.
本発明は上記の点にかんがみなされたものであり、簡易
な装置で、スルーブツトが高（、しかも基板に対するパ
ーティクルレベルの改善が図れるようにした基板の洗浄
・乾燥装置を提供することを目的とする。The present invention has been made in consideration of the above points, and an object of the present invention is to provide a substrate cleaning/drying device which is a simple device, has a high throughput (and can improve the particle level to the substrate). .
（課題を解決するための手段］
上記課題を解決するために、本発明の洗浄・乾燥装置は
、洗浄槽と、該洗浄槽に温純水を導入する給水系、およ
び洗浄槽の底部から温純水を抜き取る排水系とを具備し
、洗浄槽内にホルダに担持した基板を収容セットした状
態で、給水系より槽内に温純水を導入して基板を洗浄し
、しかる後に排水系の水抜き操作により槽内の液面レベ
ルを所定速度で下げて基板を水切り乾燥するように構成
するものとする。(Means for Solving the Problems) In order to solve the above problems, the washing/drying apparatus of the present invention includes a washing tank, a water supply system that introduces warm pure water into the washing tank, and a water supply system that extracts warm pure water from the bottom of the washing tank. With the board supported on the holder set in the cleaning tank, warm pure water is introduced into the tank from the water supply system to clean the board, and after that, the tank is drained by draining the water from the drainage system. The substrate is drained and dried by lowering the liquid level at a predetermined speed.
上記の構成で、一基板をホルダに担持したまま洗浄槽内
に収容セットし、この状態で給水系を通じて槽内へ６０
℃程度に加温した温純水を導入し、かつ温純水を洗浄槽
からオーバーフローさせながら連続的に流すことにより
基板が洗浄される。続いて、基板を定位置に置いたまま
、排水系の水抜き操作により槽内の液面レベルを所定の
速度で下げていくと、いままで液中に浸漬していた基板
が液面上に露呈する際に基板面と液面との間に働く表面
張力の作用て基板表面に付着している液、およびパーテ
ィクルが一締にそぎ落とされ、同時に液内への浸漬時に
基板に加わった熱で自然乾燥するようになる。With the above configuration, one substrate is placed in the cleaning tank while being supported by the holder, and in this state it is transferred into the tank through the water supply system for 60 minutes.
The substrate is cleaned by introducing warm pure water heated to about 0.degree. C. and continuously flowing the warm pure water while causing it to overflow from the cleaning tank. Next, with the board in place, the liquid level in the tank is lowered at a predetermined speed by draining water from the drainage system, and the board, which had been immersed in the liquid, rises to the liquid level. Due to the surface tension that acts between the substrate surface and the liquid surface when exposed, the liquid and particles adhering to the substrate surface are quickly scraped off, and at the same time, the heat applied to the substrate when immersed in the liquid is removed. Let it dry naturally.
なお、乾燥効果をより一層高めるためには、洗浄槽内に
ヒータを組み込んでおき、温純水を抜き取った後にヒー
タ加熱により槽内を５０〜１００℃程度に加熱するのが
好ましい。In order to further enhance the drying effect, it is preferable to incorporate a heater into the cleaning tank, and heat the inside of the tank to about 50 to 100° C. after drawing out the warm pure water.
（実施例〕
第１図は本発明実施例による洗浄・乾燥装置のフロー図
である０図において、ｌは洗浄槽、２は洗浄液として用
いる純水３を加熱、貯留するヒータ２ａ付きの貯留槽、
４．５はそれぞれ洗浄槽１に接続した給水系、および排
水系であり、洗浄槽ｌは貯留槽２よりも上位に配置して
両者の間に落差を設定している。(Embodiment) FIG. 1 is a flowchart of a cleaning/drying apparatus according to an embodiment of the present invention. In FIG. ,
4.5 are a water supply system and a drainage system connected to the cleaning tank 1, respectively, and the cleaning tank 1 is arranged above the storage tank 2, with a head difference between the two.
ここで、前記洗浄槽ｌ内には中仕切板１ａを介してオー
バーフロー室１ｂが設けてあり、さらに槽内底部にはヒ
ータｌｃが配備されている。また、給水系４は送液ポン
プ４ａ、開閉弁４ｂ、流量調整弁４ｃ。Here, an overflow chamber 1b is provided in the cleaning tank 1 via a partition plate 1a, and a heater lc is further provided at the bottom of the tank. Further, the water supply system 4 includes a liquid feeding pump 4a, an on-off valve 4b, and a flow rate adjustment valve 4c.
フィルタ４ｄなどを備えて貯留槽２と洗浄槽ｌの底部と
の間に配管されている。これに対して排水系５は、開閉
弁５Ｌ、流量調整弁５ｂを備えて洗浄槽１の底部と貯留
槽２との間に配管されている。なお、６は洗浄槽ｌのオ
ーバーフロー室１ｂと貯留槽２との間に配管したオーバ
ーフロー液の戻し配管、６ａは開閉弁、また２ｂは貯留
槽２に接続したドレンコックである。It is provided with a filter 4d and the like and is piped between the storage tank 2 and the bottom of the cleaning tank l. On the other hand, the drainage system 5 is provided with an on-off valve 5L and a flow rate adjustment valve 5b, and is piped between the bottom of the cleaning tank 1 and the storage tank 2. In addition, 6 is a return pipe for overflow liquid that is piped between the overflow chamber 1b of the cleaning tank 1 and the storage tank 2, 6a is an on-off valve, and 2b is a drain cock connected to the storage tank 2.
次に、上記装置を用いた基板の洗浄、乾燥工程について
説明する。まず、複数枚の基板７を石英スリットと呼ば
れるホルダ８の上に垂直姿勢に並べて担持させた状態で
、基板７をホルダ８とともに空のｆＲＩＩｌにある洗浄
槽１の中の所定位置に収容セットする。続いて貯留槽２
で６０℃程度に加熱昇温された温純水を給水系４を通じ
て洗浄槽ｌへ導入し、さらに槽内で温純水をオーバーフ
ローさせながら敞分間連続的に流して基板７を洗浄する
。Next, a cleaning and drying process of the substrate using the above-mentioned apparatus will be explained. First, with a plurality of substrates 7 supported vertically on a holder 8 called a quartz slit, the substrates 7 and the holder 8 are placed in a predetermined position in the cleaning tank 1 in the empty fRIIl. . Next, storage tank 2
Warm pure water heated to about 60° C. is introduced into the cleaning tank 1 through the water supply system 4, and the substrate 7 is washed by flowing the warm pure water continuously for a minute while overflowing the tank.
なお、この状ｍ−では排水系５の開閉弁５ａは閉じ、オ
ーバーフロー液戻し配管６の開閉弁６ａは開いて、いる
。In this state m-, the on-off valve 5a of the drainage system 5 is closed, and the on-off valve 6a of the overflow liquid return pipe 6 is open.
前記の洗浄工程が済むと給水系４からの送液を停止し、
続いて乾燥工程に移行する。この乾燥工程では基板７を
槽内の定位置に支持したまま排水系５の開閉弁５ａを開
いて洗浄槽ｌ内に滞留している温純水を抜き取り、流量
調整弁５ｂを通じて貯留槽２へ自然流下式に回収する。After the above-mentioned cleaning process is completed, the liquid supply from the water supply system 4 is stopped,
Next, the process moves to the drying process. In this drying step, while the substrate 7 is supported in a fixed position in the tank, the on-off valve 5a of the drainage system 5 is opened to draw out the hot pure water remaining in the cleaning tank l, and it is allowed to naturally flow into the storage tank 2 through the flow rate adjustment valve 5b. Collect in formula.
なお、この水抜き操作の際には、洗浄槽１の液面レベル
が所定の速度で徐々に下がるように前記の流量調整弁５
ｂで流量をあらかじめ設定しておく。Note that during this water draining operation, the flow rate regulating valve 5 is adjusted so that the liquid level in the cleaning tank 1 gradually decreases at a predetermined speed.
Set the flow rate in advance using b.
一方、前記の水抜き操作により、いままで液中に浸漬し
ていた基板７は液面レベルの降下につれて液面上に露呈
するようになり、かつこの過程で温純水の液面と基板面
との間に働く液の表面張力作用により、基板７の表面に
付着しているパーティクルが液と一緒にそぎ落とされる
ようになる。On the other hand, as a result of the water draining operation described above, the substrate 7 that had been immersed in the liquid until now is exposed above the liquid level as the liquid level falls, and in this process, the liquid level of the warm pure water and the substrate surface are exposed. Due to the surface tension of the liquid acting between them, particles adhering to the surface of the substrate 7 are scraped off together with the liquid.
しかも、基板７自身は温純水の熱で加温された状態にあ
り、液内から気中に露呈すると同時に自然乾燥される。Moreover, the substrate 7 itself is in a state of being heated by the heat of the warm pure water, and is naturally dried as soon as it is exposed from the liquid to the air.
そして、洗浄槽１が空の状態になれば、次に洗浄槽１に
内蔵したヒータｌｃに通電して槽内の雲囲気を５０〜１
００℃程度に加熱し、基板７を強制乾燥させるとともに
、基板７とホルダ８との間に残っている液を蒸発、排除
する。When the cleaning tank 1 is empty, the heater LC built in the cleaning tank 1 is energized to raise the cloud atmosphere in the tank to 50 to 1
The substrate 7 is forcibly dried by heating to about 00° C., and the liquid remaining between the substrate 7 and the holder 8 is evaporated and removed.
なお、前記した実施例では、貯留槽２に蓄えた純水を洗
浄槽１との間で？ｉ環して繰り返し利用する方式を示し
たが、貯留槽２を用いる代わりに、図中に鎖線で示すよ
うに別な温純水源に接続した給水系４０、ドレン系に開
放した排水系５０を通じて洗浄槽ｌへの給水、および排
水を１回分ずつ使い捨て方式で実施することもできる。In addition, in the embodiment described above, the pure water stored in the storage tank 2 is transferred between the cleaning tank 1 and the cleaning tank 1. Although a method of repeatedly using the i-ring is shown, instead of using the storage tank 2, as shown by the chain line in the figure, the water supply system 40 is connected to another warm pure water source, and the drainage system 50 is opened to the drain system. It is also possible to supply water to the cleaning tank 1 and drain it once at a time in a disposable manner.
本発明による基板の洗浄・乾燥装置は、以上説明したよ
うに構成されているので、次記の効果を奏する。Since the substrate cleaning/drying apparatus according to the present invention is configured as described above, it achieves the following effects.
（１）基板の洗浄、乾燥を洗浄槽内の液面の昇降操作に
より行うので、従来装置のようにハンドリング機構が不
要となり、装置の簡略化、低コスト化が図れる。(1) Since the cleaning and drying of the substrate is performed by raising and lowering the liquid level in the cleaning tank, there is no need for a handling mechanism as in conventional equipment, and the equipment can be simplified and lowered in cost.
（２）発塵源となるハンドリング機構がないので、パー
ティクルレベルの大幅な改善が図れる。(2) Since there is no handling mechanism that can be a source of dust generation, the particle level can be significantly improved.
（３）基板を静止状態で保持したまま液面レベルを下げ
て水切り乾燥するようにしたので、基板に揺れ、振動な
どを加えることなしに表面張力作用による基板の乾燥を
効果的に行うことができる他、液面レベルの降下速度を
従来装置による基板引き上げ速度よりも早めてスルーブ
ツトの向上を図ることもできる。(3) By lowering the liquid level and draining and drying while holding the substrate stationary, it is possible to effectively dry the substrate using the effect of surface tension without applying shaking or vibration to the substrate. In addition, it is also possible to improve the throughput by lowering the liquid level faster than the substrate lifting speed with the conventional device.
第１図は本発明実施例による基板の洗浄・乾燥装置の構
成図である０図において、
ｌ：洗浄槽、３：温純水、４，４Ｏ：給水系、５゜５０
：排水系、７：基板、８：ホルダ。
ｑ
７基板
、〆
第１図FIG. 1 is a block diagram of a substrate cleaning/drying apparatus according to an embodiment of the present invention. In FIG.
: drainage system, 7: board, 8: holder. q 7 board, Figure 1
Claims (1)
てホルダに担持した基板の表面を温純水で洗浄した後に
水切り乾燥させる基板の洗浄・乾燥装置であって、洗浄
槽と、該洗浄槽に温純水を導入する給水系と、洗浄槽の
底部から温純水を抜き取る排水系とを備え、洗浄槽内に
ホルダに担持した基板を収容セットした状態で、給水系
より槽内に温純水を導入して基板を洗浄し、しかる後に
排水系の水抜き操作により槽内の液面レベルを所定速度
で下げて基板を水切り乾燥するよう構成したことを特徴
とする基板の洗浄・乾燥装置。1) A substrate cleaning/drying device for substrates such as semiconductor wafers, which cleans the surfaces of substrates arranged vertically in a holder with warm pure water, drains and dries them, and includes a cleaning tank and warm pure water in the cleaning tank. The system is equipped with a water supply system that introduces warm pure water from the bottom of the cleaning tank, and a drainage system that draws warm pure water from the bottom of the cleaning tank.When a substrate supported on a holder is set in the cleaning tank, hot pure water is introduced into the tank from the water supply system to remove the board. A device for cleaning and drying a substrate, characterized in that it is configured to perform cleaning, and then drain the substrate by lowering the liquid level in the tank at a predetermined speed by draining water from the drainage system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10056689A JPH02278823A (en) | 1989-04-20 | 1989-04-20 | Cleaning and drying apparatus of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10056689A JPH02278823A (en) | 1989-04-20 | 1989-04-20 | Cleaning and drying apparatus of substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02278823A true JPH02278823A (en) | 1990-11-15 |
Family
ID=14277466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10056689A Pending JPH02278823A (en) | 1989-04-20 | 1989-04-20 | Cleaning and drying apparatus of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02278823A (en) |
-
1989
- 1989-04-20 JP JP10056689A patent/JPH02278823A/en active Pending
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